[go: up one dir, main page]

BRPI1010508A2 - "alvo, processos de produção de um alvo por projeção térmica e de uma camada, camada, tela plana de exibição, componente semicondutor, e, utilização de uma camada" - Google Patents

"alvo, processos de produção de um alvo por projeção térmica e de uma camada, camada, tela plana de exibição, componente semicondutor, e, utilização de uma camada"

Info

Publication number
BRPI1010508A2
BRPI1010508A2 BRPI1010508A BRPI1010508A BRPI1010508A2 BR PI1010508 A2 BRPI1010508 A2 BR PI1010508A2 BR PI1010508 A BRPI1010508 A BR PI1010508A BR PI1010508 A BRPI1010508 A BR PI1010508A BR PI1010508 A2 BRPI1010508 A2 BR PI1010508A2
Authority
BR
Brazil
Prior art keywords
layer
target
processes
producing
flat panel
Prior art date
Application number
BRPI1010508A
Other languages
English (en)
Inventor
Dominique Billieres
Original Assignee
Saint Gobain Coating Solutions
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40984826&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI1010508(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Saint Gobain Coating Solutions filed Critical Saint Gobain Coating Solutions
Publication of BRPI1010508A2 publication Critical patent/BRPI1010508A2/pt
Publication of BRPI1010508B1 publication Critical patent/BRPI1010508B1/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/067—Metallic material containing free particles of non-metal elements, e.g. carbon, silicon, boron, phosphorus or arsenic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/137—Spraying in vacuum or in an inert atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
BRPI1010508A 2009-04-10 2010-04-12 alvo à base de molibdênio BRPI1010508B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0952392A FR2944295B1 (fr) 2009-04-10 2009-04-10 Cible a base de molybdene et procede d'elaboration par projection thermique d'une cible
PCT/FR2010/050703 WO2010116111A1 (fr) 2009-04-10 2010-04-12 Cible à base de molybdène et procédé d'élaboration par projection thermique d'une cible

Publications (2)

Publication Number Publication Date
BRPI1010508A2 true BRPI1010508A2 (pt) 2016-03-15
BRPI1010508B1 BRPI1010508B1 (pt) 2020-04-07

Family

ID=40984826

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1010508A BRPI1010508B1 (pt) 2009-04-10 2010-04-12 alvo à base de molibdênio

Country Status (17)

Country Link
US (1) US9951413B2 (pt)
EP (1) EP2417279B1 (pt)
JP (1) JP5667163B2 (pt)
KR (1) KR101754430B1 (pt)
CN (2) CN102388159A (pt)
AU (1) AU2010233525B2 (pt)
BR (1) BRPI1010508B1 (pt)
CA (1) CA2757900C (pt)
EA (1) EA027665B1 (pt)
ES (1) ES2823762T3 (pt)
FR (1) FR2944295B1 (pt)
MX (1) MX2011010585A (pt)
MY (1) MY156266A (pt)
PL (1) PL2417279T3 (pt)
SG (1) SG175159A1 (pt)
UA (1) UA108472C2 (pt)
WO (1) WO2010116111A1 (pt)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT12292U3 (de) * 2011-10-18 2013-03-15 Plansee Se Rohrtarget
KR101309648B1 (ko) 2011-12-27 2013-09-17 재단법인 포항산업과학연구원 Ｒｆ 플라즈마를 이용한 몰리브덴 금속타겟 제조방법
CN104039483B (zh) 2011-12-30 2017-03-01 思高博塔公司 涂层组合物
KR101600169B1 (ko) * 2013-03-12 2016-03-04 히타치 긴조쿠 가부시키가이샤 전자 부품용 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재
CN103774101A (zh) * 2014-02-14 2014-05-07 山东昊轩电子陶瓷材料有限公司 超低氧含量热喷涂管靶及其制备方法
CN104946950A (zh) * 2015-06-10 2015-09-30 深圳市威勒达科技开发有限公司 一种钒钨合金靶材及其制备方法
CN104894449A (zh) * 2015-06-10 2015-09-09 深圳市威勒达科技开发有限公司 一种钒钼合金靶材及其制备方法
CN108350528B (zh) 2015-09-04 2020-07-10 思高博塔公司 无铬和低铬耐磨合金
CN106567048B (zh) * 2016-11-10 2018-11-27 洛阳科威钨钼有限公司 一种大型高纯钼合金旋转靶材的制造方法
CN106555094A (zh) * 2016-11-24 2017-04-05 苏州华意铭铄激光科技有限公司 一种航空航天用高温复合结构件
US11286172B2 (en) 2017-02-24 2022-03-29 BWXT Isotope Technology Group, Inc. Metal-molybdate and method for making the same
SG11201907100RA (en) * 2017-03-23 2019-10-30 Mitsui Mining & Smelting Co Sputtering target and production method therefor
US20210164081A1 (en) 2018-03-29 2021-06-03 Oerlikon Metco (Us) Inc. Reduced carbides ferrous alloys
JP7641218B2 (ja) 2018-10-26 2025-03-06 エリコン メテコ（ユーエス）インコーポレイテッド 耐食性かつ耐摩耗性のニッケル系合金
CN113631750A (zh) 2019-03-28 2021-11-09 欧瑞康美科（美国）公司 用于涂布发动机气缸孔的热喷涂铁基合金
EP3962693A1 (en) 2019-05-03 2022-03-09 Oerlikon Metco (US) Inc. Powder feedstock for wear resistant bulk welding configured to optimize manufacturability
CN110453127B (zh) * 2019-09-09 2020-07-10 安泰天龙钨钼科技有限公司 一种多元复合强化钼合金及其制备方法
JP2021048239A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 半導体装置およびその製造方法
CN111304610A (zh) * 2020-03-19 2020-06-19 河北宏靶科技有限公司 一种钛硅钼合金靶材及其制备方法
CN113174573A (zh) * 2021-04-29 2021-07-27 宁波江丰电子材料股份有限公司 一种钼钛合金靶坯的制备方法
PL445255A1 (pl) 2023-06-17 2024-12-23 Sieć Badawcza Łukasiewicz - Poznański Instytut Technologiczny Sposób wytwarzania wieloskładnikowej tarczy do rozpylania magnetronowego i zestaw narzędziowy do wytwarzania wieloskładnikowej tarczy oraz wieloskładnikowa tarcza magnetronowa i jej zastosowanie do wytwarzania powłoki ochronnej

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356073A (en) 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4619697A (en) * 1984-08-30 1986-10-28 Mitsubishi Kinzoku Kabushiki Kaisha Sputtering target material and process for producing the same
JPS6167768A (ja) * 1984-09-12 1986-04-07 Hitachi Ltd スパツタタ−ゲツト
US4750932A (en) * 1985-04-15 1988-06-14 Gte Products Corporation Refractory metal silicide sputtering target
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
DE4031489A1 (de) * 1990-10-05 1992-04-09 Ver Glaswerke Gmbh Verfahren zum beschichten von glasscheiben mit hilfe eines thermischen spritzverfahrens
JPH06122956A (ja) * 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd プラズマ溶射方法及び溶射製膜装置
DE4339345C2 (de) * 1993-11-18 1995-08-24 Difk Deutsches Inst Fuer Feuer Verfahren zum Auftragen einer Hartstoffschicht mittels Plasmaspritzen
JPH0820863A (ja) * 1995-06-12 1996-01-23 Toshiba Corp シリサイド膜およびその膜を使用した半導体装置
EP0960955A1 (en) 1998-05-26 1999-12-01 Universiteit Gent Method and apparatus for flame spraying to form a tough coating
JP2000064033A (ja) * 1998-08-19 2000-02-29 Tokyo Tungsten Co Ltd スパッタリングターゲット
JP2003342720A (ja) * 2002-05-20 2003-12-03 Nippon Steel Corp スパッタリング用モリブデンターゲットの製造方法及びモリブデンターゲット
EP1597407B1 (en) * 2003-02-24 2011-08-31 Tekna Plasma Systems Inc. Process for the manufacture of a sputtering target
US20050230244A1 (en) * 2004-03-31 2005-10-20 Hitachi Metals, Ltd Sputter target material and method of producing the same
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
US20060042728A1 (en) 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets
US8088232B2 (en) 2004-08-31 2012-01-03 H.C. Starck Inc. Molybdenum tubular sputtering targets with uniform grain size and texture
JP4851700B2 (ja) * 2004-09-30 2012-01-11 株式会社東芝 真空成膜装置用部品及び真空成膜装置
WO2006041730A2 (en) 2004-10-07 2006-04-20 Atmel Corporation Method and system for a programming approach for a nonvolatile electronic device
FR2881757B1 (fr) * 2005-02-08 2007-03-30 Saint Gobain Procede d'elaboration par projection thermique d'une cible a base de silicium et de zirconium
BRPI0611451A2 (pt) 2005-05-05 2010-09-08 Starck H C Gmbh processo de revestimento para fabricação ou reprocessamento de alvos de metalização e anodos de raios x
JP4479006B2 (ja) 2005-07-28 2010-06-09 セイコーエプソン株式会社 半導体装置の製造方法
WO2007141174A1 (en) * 2006-06-02 2007-12-13 Bekaert Advanced Coatings A rotatable sputter target
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US8293035B2 (en) * 2006-10-12 2012-10-23 Air Products And Chemicals, Inc. Treatment method, system and product
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP4894008B2 (ja) * 2007-05-09 2012-03-07 日立金属株式会社 ＭｏＮｂ系焼結スパッタリングターゲット材の製造方法
FR2944293B1 (fr) * 2009-04-10 2012-05-18 Saint Gobain Coating Solutions Procede d'elaboration par projection thermique d'une cible

Also Published As

Publication number Publication date
BRPI1010508B1 (pt) 2020-04-07
EA201171235A1 (ru) 2012-05-30
FR2944295A1 (fr) 2010-10-15
JP2012523497A (ja) 2012-10-04
AU2010233525B2 (en) 2016-05-19
US20120063947A1 (en) 2012-03-15
AU2010233525A1 (en) 2011-11-17
CA2757900A1 (fr) 2010-10-14
JP5667163B2 (ja) 2015-02-12
UA108472C2 (en) 2015-05-12
US9951413B2 (en) 2018-04-24
KR20120023604A (ko) 2012-03-13
EP2417279B1 (fr) 2020-07-22
MX2011010585A (es) 2012-01-25
CN102388159A (zh) 2012-03-21
EA027665B1 (ru) 2017-08-31
PL2417279T3 (pl) 2021-03-08
ES2823762T3 (es) 2021-05-10
FR2944295B1 (fr) 2014-08-15
CA2757900C (fr) 2014-09-30
EP2417279A1 (fr) 2012-02-15
KR101754430B1 (ko) 2017-07-05
WO2010116111A1 (fr) 2010-10-14
CN107083528A (zh) 2017-08-22
SG175159A1 (en) 2011-11-28
MY156266A (en) 2016-01-29

Similar Documents

Publication Publication Date Title
BRPI1010508A2 (pt) "alvo, processos de produção de um alvo por projeção térmica e de uma camada, camada, tela plana de exibição, componente semicondutor, e, utilização de uma camada"
BRPI1010513A2 (pt) "processos de produção de um alvo por projeção térmica e de uma camada por pulverização de um alvo, e, alvo"
DK2018184T3 (da) Anti-vegf-b-antistof til behandling eller forebyggende behandling af type 2-diabetes eller metabolisk syndrom
BR112012016643A2 (pt) filme com uma espessura maior que 100 mícrons
BR112012002178A2 (pt) quadro de ligações, método para fabricação do mesmo, painel de exibição, e dispositivo de exibição
ES2654908T8 (es) Análogos de tiazolidindiona para el tratamiento de enfermedades mediadas por una inflamación metabólica
BRPI0920725A2 (pt) substrato de dispositivo visor, método de fabricação de substrato de dispositivo visor, dispositivo visor, dispositivo visor de cristal líquido, método de fabricação de dispositivo de cristal líquido e dispositivo visor orgânico eletroluminescente
BRPI0921573A2 (pt) substrato de circuito, painel de exibição e dispositivo de exibição
PL3364651T3 (pl) Wyświetlacze projekcyjne o dużej luminancji i powiązane sposoby
PL2290413T3 (pl) Samoprzylepna płyta polaryzacyjna, wyświetlacz obrazu oraz sposoby wytwarzania samoprzylepnej płyty polaryzacyjnej i wyświetlacza obrazu
BRPI0915139A2 (pt) método para depositar pelo menos uma camada de cerâmica cristalina de óxido metálico sobre uma superfície de um substrato, e, superfície de um substrato
GB2473148B (en) Methods of forming buffer layer architecture on silicon and structures formed thereby
BRPI0912768A2 (pt) vacinas de poliproteínas recombinante para o tratamento e diagnóstico de leishmaniose
BRPI0909860A2 (pt) dispositivo de resfriamento de um gabinete de computador e instalação de informática
BRPI0916070A2 (pt) substrato para um dispositivo óptico-eletrônico
BRPI0822291A2 (pt) Substrato de matriz ativa e dispositivo de display de cristal líquido
BR112012013841A2 (pt) computador portátil tendo um painel de exibição, método para ajustar o ângulo de visão de um arranjo de câmera digital e arranjo de câmera digital
IT1398427B1 (it) Procedimento ed apparato di rilevazione dell'allineamento di un substrato
BR112012029424A2 (pt) métodos para fazer e consertar displays de tela plana redimensionados
BRPI1006997A2 (pt) substrato de matriz e dispositivo de vídeo tendo o mesmo
EP2334239A4 (en) INSULATION OF MICROBUMS OF A SPECIFIC SIZE OF POLYDISPERSE MICROBUBBLES
DE502008002718D1 (de) Vernetzbare Siliconbeschichtungszusammensetzungen
BRPI0921001A2 (pt) substrato de painel de exibição e painel de exibição.
EP2492331A4 (en) LIGHT-SENSITIVE LAMINATE, LIGHT-SENSITIVE FUEL AND SEMICONDUCTOR COMPONENTS THEREWITH
BR112015009213A2 (pt) substrato e método para a produção de substrato

Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 12/04/2010, OBSERVADAS AS CONDICOES LEGAIS.

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 13A ANUIDADE.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2718 DE 07-02-2023 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.