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BRPI0921001A2 - substrato de painel de exibição e painel de exibição. - Google Patents

substrato de painel de exibição e painel de exibição.

Info

Publication number
BRPI0921001A2
BRPI0921001A2 BRPI0921001A BRPI0921001A BRPI0921001A2 BR PI0921001 A2 BRPI0921001 A2 BR PI0921001A2 BR PI0921001 A BRPI0921001 A BR PI0921001A BR PI0921001 A BRPI0921001 A BR PI0921001A BR PI0921001 A2 BRPI0921001 A2 BR PI0921001A2
Authority
BR
Brazil
Prior art keywords
display panel
substrate
panel substrate
display
panel
Prior art date
Application number
BRPI0921001A
Other languages
English (en)
Inventor
umezawa Takahiro
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of BRPI0921001A2 publication Critical patent/BRPI0921001A2/pt

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0231Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441Interconnections, e.g. scanning lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
BRPI0921001A 2008-11-21 2009-11-13 substrato de painel de exibição e painel de exibição. BRPI0921001A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008298208 2008-11-21
PCT/JP2009/069351 WO2010058738A1 (ja) 2008-11-21 2009-11-13 表示パネル用の基板、表示パネル

Publications (1)

Publication Number Publication Date
BRPI0921001A2 true BRPI0921001A2 (pt) 2019-09-24

Family

ID=42198178

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0921001A BRPI0921001A2 (pt) 2008-11-21 2009-11-13 substrato de painel de exibição e painel de exibição.

Country Status (7)

Country Link
US (1) US20110234956A1 (pt)
EP (1) EP2357629A4 (pt)
JP (1) JP5306369B2 (pt)
CN (1) CN102224536A (pt)
BR (1) BRPI0921001A2 (pt)
RU (1) RU2474006C1 (pt)
WO (1) WO2010058738A1 (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102073957B1 (ko) * 2013-09-11 2020-02-06 삼성디스플레이 주식회사 액정표시패널 및 그 제조방법
JP6192823B2 (ja) * 2014-05-22 2017-09-06 シャープ株式会社 接続配線
CN104007571B (zh) * 2014-06-04 2017-01-18 南京中电熊猫液晶显示科技有限公司 一种阵列基板及其制造方法
WO2019064342A1 (ja) * 2017-09-26 2019-04-04 シャープ株式会社 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置
CN107818992B (zh) * 2017-10-30 2020-04-10 上海天马微电子有限公司 一种显示面板和显示装置
CN111972043B (zh) * 2018-03-29 2023-08-01 夏普株式会社 显示装置及其制造方法
CN209626221U (zh) * 2019-05-17 2019-11-12 北京京东方技术开发有限公司 一种oled显示面板及显示装置
CN111063255B (zh) * 2019-12-17 2021-09-03 深圳市华星光电半导体显示技术有限公司 显示面板及显示装置
JPWO2021199756A1 (pt) * 2020-03-30 2021-10-07

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* Cited by examiner, † Cited by third party
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JPS63195687A (ja) * 1987-02-09 1988-08-12 セイコーエプソン株式会社 アクテイブマトリツクス基板の端子構造
US5187604A (en) * 1989-01-18 1993-02-16 Hitachi, Ltd. Multi-layer external terminals of liquid crystal displays with thin-film transistors
US5798811A (en) * 1993-12-21 1998-08-25 U.S. Philips Corporation Picture display device with partially clear contact areas
JP2555987B2 (ja) * 1994-06-23 1996-11-20 日本電気株式会社 アクティブマトリクス基板
RU2118839C1 (ru) * 1994-09-26 1998-09-10 Фирма "ЛГ Электроникс" Жидкокристаллический экран с активной матрицей
JP3306488B2 (ja) * 1996-07-02 2002-07-24 シャープ株式会社 アクティブマトリクス基板
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH1124094A (ja) * 1997-06-30 1999-01-29 Matsushita Electric Ind Co Ltd 液晶表示装置
JP3305235B2 (ja) * 1997-07-01 2002-07-22 松下電器産業株式会社 アクティブ素子アレイ基板
JP3097841B2 (ja) * 1997-11-20 2000-10-10 松下電器産業株式会社 フォトマスク及びアクティブ素子アレイ基板の製造方法
JP3975014B2 (ja) 1998-11-20 2007-09-12 株式会社アドバンスト・ディスプレイ 液晶表示装置の製造方法
US6353464B1 (en) * 1998-11-20 2002-03-05 Kabushiki Kaisha Advanced Display TFT array substrate, liquid crystal display using TFT array substrate, and manufacturing method thereof in which the interlayer insulating film covers the guard resistance and the short ring
JP3982730B2 (ja) 1998-12-10 2007-09-26 株式会社アドバンスト・ディスプレイ 薄膜トランジスタアレイ基板の製造方法
KR20020062275A (ko) * 1999-09-08 2002-07-25 마쯔시다덴기산교 가부시키가이샤 전기회로기판 및 이것을 이용한 tft 어레이기판 그리고액정표시장치
JP3752952B2 (ja) * 2000-03-15 2006-03-08 松下電器産業株式会社 調理器
JP2001264798A (ja) * 2000-03-22 2001-09-26 Hitachi Ltd アクティブマトリックス基板及びそれを用いた光学変調素子
KR100656915B1 (ko) * 2000-09-08 2006-12-12 삼성전자주식회사 신호 전송용 필름, 이를 포함하는 제어 신호부 및 액정표시 장치
KR100390456B1 (ko) * 2000-12-13 2003-07-07 엘지.필립스 엘시디 주식회사 액정 디스플레이 패널 및 그 제조방법
JP4398601B2 (ja) * 2001-05-18 2010-01-13 エーユー オプトロニクス コーポレイション 薄膜トランジスタ・アレイ基板、薄膜トランジスタ・アレイ基板の製造方法および表示装置
JP4290976B2 (ja) * 2002-12-20 2009-07-08 奇美電子股▲ふん▼有限公司 画像表示パネル、画像表示装置および画像表示パネルの製造方法
JP4179199B2 (ja) * 2003-06-02 2008-11-12 セイコーエプソン株式会社 電気光学装置及びこれを備えた電子機器
JP2006237158A (ja) * 2005-02-23 2006-09-07 Seiko Instruments Inc 表示装置
US7768590B2 (en) * 2005-04-26 2010-08-03 Sharp Kabushiki Kaisha Production method of active matrix substrate, active matrix substrate, and liquid crystal display device
TWI351567B (en) * 2006-10-05 2011-11-01 Chunghwa Picture Tubes Ltd Pixel structure and liquid crystal display panel u
TWI348584B (en) * 2006-10-19 2011-09-11 Au Optronics Corp Liquid crystal display panel
KR101448005B1 (ko) * 2007-05-17 2014-10-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN101252136A (zh) * 2008-03-31 2008-08-27 昆山龙腾光电有限公司 薄膜晶体管基板及具有该薄膜晶体管基板的液晶显示装置

Also Published As

Publication number Publication date
RU2474006C1 (ru) 2013-01-27
RU2011125344A (ru) 2012-12-27
JPWO2010058738A1 (ja) 2012-04-19
CN102224536A (zh) 2011-10-19
JP5306369B2 (ja) 2013-10-02
US20110234956A1 (en) 2011-09-29
EP2357629A1 (en) 2011-08-17
EP2357629A4 (en) 2013-01-02
WO2010058738A1 (ja) 2010-05-27

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.