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AU5866300A - Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors - Google Patents

Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors

Info

Publication number
AU5866300A
AU5866300A AU58663/00A AU5866300A AU5866300A AU 5866300 A AU5866300 A AU 5866300A AU 58663/00 A AU58663/00 A AU 58663/00A AU 5866300 A AU5866300 A AU 5866300A AU 5866300 A AU5866300 A AU 5866300A
Authority
AU
Australia
Prior art keywords
postgrowth
detectors
adjustment
semiconductor lasers
cavity spectrum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU58663/00A
Inventor
Yuliya Akulova
Larry Coldren
Andrea Fiore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gore Enterprise Holdings Inc
Original Assignee
Gore Enterprise Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gore Enterprise Holdings Inc filed Critical Gore Enterprise Holdings Inc
Publication of AU5866300A publication Critical patent/AU5866300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU58663/00A 1999-04-27 2000-04-25 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors Abandoned AU5866300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30025399A 1999-04-27 1999-04-27
US09300253 1999-04-27
PCT/US2000/011048 WO2000065700A2 (en) 1999-04-27 2000-04-25 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors

Publications (1)

Publication Number Publication Date
AU5866300A true AU5866300A (en) 2000-11-10

Family

ID=23158322

Family Applications (1)

Application Number Title Priority Date Filing Date
AU58663/00A Abandoned AU5866300A (en) 1999-04-27 2000-04-25 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors

Country Status (2)

Country Link
AU (1) AU5866300A (en)
WO (1) WO2000065700A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7257143B2 (en) 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US20030219917A1 (en) 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7167495B2 (en) 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7435660B2 (en) 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7075954B2 (en) 2001-05-29 2006-07-11 Nl Nanosemiconductor Gmbh Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
CN101432936B (en) 2004-10-01 2011-02-02 菲尼萨公司 Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN104659166B (en) * 2015-02-11 2018-01-19 山东浪潮华光光电子股份有限公司 A kind of wet-oxygen oxidation method of GaAs based light-emitting diodes
US11749964B2 (en) * 2020-06-24 2023-09-05 Meta Platforms Technologies, Llc Monolithic light source with integrated optics based on nonlinear frequency conversion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2806333B2 (en) * 1995-11-09 1998-09-30 日本電気株式会社 Surface emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2000065700A2 (en) 2000-11-02
WO2000065700A3 (en) 2001-01-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase