AU2002336922A1 - Transistor cell - Google Patents
Transistor cellInfo
- Publication number
- AU2002336922A1 AU2002336922A1 AU2002336922A AU2002336922A AU2002336922A1 AU 2002336922 A1 AU2002336922 A1 AU 2002336922A1 AU 2002336922 A AU2002336922 A AU 2002336922A AU 2002336922 A AU2002336922 A AU 2002336922A AU 2002336922 A1 AU2002336922 A1 AU 2002336922A1
- Authority
- AU
- Australia
- Prior art keywords
- transistor cell
- transistor
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10W40/22—
-
- H10W40/228—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10133362.5 | 2001-07-10 | ||
| DE10133362A DE10133362A1 (en) | 2001-07-10 | 2001-07-10 | transistor cell |
| PCT/EP2002/007306 WO2003007371A2 (en) | 2001-07-10 | 2002-07-02 | Transistor cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2002336922A1 true AU2002336922A1 (en) | 2003-01-29 |
Family
ID=7691195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002336922A Abandoned AU2002336922A1 (en) | 2001-07-10 | 2002-07-02 | Transistor cell |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2002336922A1 (en) |
| DE (1) | DE10133362A1 (en) |
| WO (1) | WO2003007371A2 (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3019884B2 (en) * | 1991-09-05 | 2000-03-13 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
| JPH06342803A (en) * | 1992-05-29 | 1994-12-13 | Texas Instr Inc <Ti> | Transistor |
| US5734193A (en) * | 1994-01-24 | 1998-03-31 | The United States Of America As Represented By The Secretary Of The Air Force | Termal shunt stabilization of multiple part heterojunction bipolar transistors |
| JPH08279562A (en) * | 1994-07-20 | 1996-10-22 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| FR2737342B1 (en) * | 1995-07-25 | 1997-08-22 | Thomson Csf | SEMICONDUCTOR COMPONENT WITH INTEGRATED THERMAL DISSIPATOR |
| US5859447A (en) * | 1997-05-09 | 1999-01-12 | Yang; Edward S. | Heterojunction bipolar transistor having heterostructure ballasting emitter |
| DE19734509C2 (en) * | 1997-08-08 | 2002-11-07 | Infineon Technologies Ag | Power transistor cell |
| JP2001168094A (en) * | 1999-12-06 | 2001-06-22 | Murata Mfg Co Ltd | Wiring structure, wiring forming method, and semiconductor device |
-
2001
- 2001-07-10 DE DE10133362A patent/DE10133362A1/en not_active Ceased
-
2002
- 2002-07-02 AU AU2002336922A patent/AU2002336922A1/en not_active Abandoned
- 2002-07-02 WO PCT/EP2002/007306 patent/WO2003007371A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| DE10133362A1 (en) | 2003-01-30 |
| WO2003007371A3 (en) | 2003-09-18 |
| WO2003007371A2 (en) | 2003-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |