AU2002316303A1 - Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material - Google Patents

Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Info

Publication number: AU2002316303A1
Authority: AU; Australia
Prior art keywords: conductive material; blunt; associated methods; microelectronic substrate; cornered
Prior art date: 2001-06-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2002316303A

Inventor

Whonchee Lee

Scott G. Meikle

Scott E. Moore

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Micron Technology Inc

Original Assignee

Micron Technology Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-06-21

Filing date

2002-06-20

Publication date

2003-01-08

2001-06-21 Priority claimed from US09/888,084 external-priority patent/US7112121B2/en

2001-06-21 Priority claimed from US09/887,767 external-priority patent/US7094131B2/en

2001-06-21 Priority claimed from US09/888,002 external-priority patent/US7160176B2/en

2002-06-20 Application filed by Micron Technology Inc filed Critical Micron Technology Inc

2003-01-08 Publication of AU2002316303A1 publication Critical patent/AU2002316303A1/en

Status Abandoned legal-status Critical Current

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/61—Electrolytic etching
- H10P50/613—Electrolytic etching of Group IV materials
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
- H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Metallurgy (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Mechanical Engineering (AREA)
Weting (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Cleaning Or Drying Semiconductors (AREA)
Element Separation (AREA)

AU2002316303A 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material Abandoned AU2002316303A1 (en)

Applications Claiming Priority (7)

Application Number	Priority Date	Filing Date	Title
US09/888,084 US7112121B2 (en)	2000-08-30	2001-06-21	Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US09/888,002		2001-06-21
US09/888,084		2001-06-21
US09/887,767		2001-06-21
US09/887,767 US7094131B2 (en)	2000-08-30	2001-06-21	Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,002 US7160176B2 (en)	2000-08-30	2001-06-21	Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
PCT/US2002/019496 WO2003001582A2 (en)	2001-06-21	2002-06-20	Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Publications (1)

Publication Number	Publication Date
AU2002316303A1 true AU2002316303A1 (en)	2003-01-08

Family

ID=27420529

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2002316303A Abandoned AU2002316303A1 (en)	2001-06-21	2002-06-20	Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Country Status (6)

Country	Link
EP (2)	EP1399957A2 (en)
JP (2)	JP2004531899A (en)
KR (2)	KR100598477B1 (en)
CN (1)	CN100356523C (en)
AU (1)	AU2002316303A1 (en)
WO (2)	WO2003001581A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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US7066800B2 (en)	2000-02-17	2006-06-27	Applied Materials Inc.	Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en)	2000-02-17	2007-12-04	Applied Materials, Inc.	Contacts for electrochemical processing
US6991528B2 (en)	2000-02-17	2006-01-31	Applied Materials, Inc.	Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en)	2000-02-17	2006-04-18	Applied Materials Inc.	Pad assembly for electrochemical mechanical processing
US7303462B2 (en)	2000-02-17	2007-12-04	Applied Materials, Inc.	Edge bead removal by an electro polishing process
US7077721B2 (en)	2000-02-17	2006-07-18	Applied Materials, Inc.	Pad assembly for electrochemical mechanical processing
US6979248B2 (en)	2002-05-07	2005-12-27	Applied Materials, Inc.	Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en)	2002-09-16	2006-01-31	Applied Materials, Inc.	Control of removal profile in electrochemically assisted CMP
US6962524B2 (en)	2000-02-17	2005-11-08	Applied Materials, Inc.	Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en)	2000-12-22	2006-06-13	Applied Materials	Articles for polishing semiconductor substrates
US7125477B2 (en)	2000-02-17	2006-10-24	Applied Materials, Inc.	Contacts for electrochemical processing
US6848970B2 (en)	2002-09-16	2005-02-01	Applied Materials, Inc.	Process control in electrochemically assisted planarization
US7374644B2 (en)	2000-02-17	2008-05-20	Applied Materials, Inc.	Conductive polishing article for electrochemical mechanical polishing
US7137879B2 (en)	2001-04-24	2006-11-21	Applied Materials, Inc.	Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en)	2001-04-24	2008-03-18	Applied Materials, Inc.	Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US6837983B2 (en) *	2002-01-22	2005-01-04	Applied Materials, Inc.	Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7112270B2 (en)	2002-09-16	2006-09-26	Applied Materials, Inc.	Algorithm for real-time process control of electro-polishing
US7842169B2 (en)	2003-03-04	2010-11-30	Applied Materials, Inc.	Method and apparatus for local polishing control
US7186164B2 (en)	2003-12-03	2007-03-06	Applied Materials, Inc.	Processing pad assembly with zone control
US7390744B2 (en)	2004-01-29	2008-06-24	Applied Materials, Inc.	Method and composition for polishing a substrate
US7084064B2 (en)	2004-09-14	2006-08-01	Applied Materials, Inc.	Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en)	2004-10-05	2009-04-21	Applied Materials, Inc.	Conductive pad design modification for better wafer-pad contact
US7427340B2 (en)	2005-04-08	2008-09-23	Applied Materials, Inc.	Conductive pad
US7998335B2 (en)	2005-06-13	2011-08-16	Cabot Microelectronics Corporation	Controlled electrochemical polishing method
US7422982B2 (en)	2006-07-07	2008-09-09	Applied Materials, Inc.	Method and apparatus for electroprocessing a substrate with edge profile control

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01241129A (en) *	1988-03-23	1989-09-26	Toshiba Corp	Manufacture of semiconductor device
KR960006714B1 (en) *	1990-05-28	1996-05-22	가부시끼가이샤 도시바	Manufacturing Method of Semiconductor Device
JPH10189909A (en) *	1996-12-27	1998-07-21	Texas Instr Japan Ltd	Dielectric capacitor, dielectric memory device, and manufacturing method thereof
US5911619A (en) *	1997-03-26	1999-06-15	International Business Machines Corporation	Apparatus for electrochemical mechanical planarization
WO1999026758A1 (en) *	1997-11-25	1999-06-03	John Hopkins University	Electrochemical-control of abrasive polishing and machining rates
KR100280107B1 (en) *	1998-05-07	2001-03-02	윤종용	How to form trench isolation
US6143155A (en) *	1998-06-11	2000-11-07	Speedfam Ipec Corp.	Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6121152A (en) *	1998-06-11	2000-09-19	Integrated Process Equipment Corporation	Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
JP4513145B2 (en) *	1999-09-07	2010-07-28	ソニー株式会社	Semiconductor device manufacturing method and polishing method
US6797623B2 (en) *	2000-03-09	2004-09-28	Sony Corporation	Methods of producing and polishing semiconductor device and polishing apparatus
US6867448B1 (en) *	2000-08-31	2005-03-15	Micron Technology, Inc.	Electro-mechanically polished structure
JP2002093761A (en) *	2000-09-19	2002-03-29	Sony Corp	Polishing method, polishing apparatus, plating method and plating apparatus
US6736952B2 (en) *	2001-02-12	2004-05-18	Speedfam-Ipec Corporation	Method and apparatus for electrochemical planarization of a workpiece

2002
- 2002-06-20 WO PCT/US2002/019495 patent/WO2003001581A2/en not_active Ceased
- 2002-06-20 CN CNB028122380A patent/CN100356523C/en not_active Expired - Fee Related
- 2002-06-20 KR KR1020037016756A patent/KR100598477B1/en not_active Expired - Fee Related
- 2002-06-20 JP JP2003507879A patent/JP2004531899A/en active Pending
- 2002-06-20 WO PCT/US2002/019496 patent/WO2003001582A2/en not_active Ceased
- 2002-06-20 AU AU2002316303A patent/AU2002316303A1/en not_active Abandoned
- 2002-06-20 JP JP2003507878A patent/JP4446271B2/en not_active Expired - Fee Related
- 2002-06-20 EP EP02746596A patent/EP1399957A2/en not_active Withdrawn
- 2002-06-20 EP EP02744464A patent/EP1399956A2/en not_active Withdrawn
- 2002-06-20 KR KR1020037016758A patent/KR100663662B1/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP2004531649A (en)	2004-10-14
JP4446271B2 (en)	2010-04-07
WO2003001581A3 (en)	2003-10-30
KR20040010773A (en)	2004-01-31
EP1399956A2 (en)	2004-03-24
CN1516894A (en)	2004-07-28
CN100356523C (en)	2007-12-19
KR100663662B1 (en)	2007-01-03
WO2003001582A2 (en)	2003-01-03
KR100598477B1 (en)	2006-07-11
JP2004531899A (en)	2004-10-14
WO2003001581A2 (en)	2003-01-03
WO2003001582A3 (en)	2003-10-30
EP1399957A2 (en)	2004-03-24
KR20040021616A (en)	2004-03-10

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Legal Events

Date	Code	Title	Description
2004-03-11	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase