[go: up one dir, main page]

WO2003001582A3 - Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material - Google Patents

Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material Download PDF

Info

Publication number
WO2003001582A3
WO2003001582A3 PCT/US2002/019496 US0219496W WO03001582A3 WO 2003001582 A3 WO2003001582 A3 WO 2003001582A3 US 0219496 W US0219496 W US 0219496W WO 03001582 A3 WO03001582 A3 WO 03001582A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive material
microelectronic substrate
corner
blunt
associated methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/019496
Other languages
French (fr)
Other versions
WO2003001582A2 (en
Inventor
Whonchee Lee
Scott G Meikle
Scott E Moore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/887,767 external-priority patent/US7094131B2/en
Priority claimed from US09/888,002 external-priority patent/US7160176B2/en
Priority claimed from US09/888,084 external-priority patent/US7112121B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to AU2002316303A priority Critical patent/AU2002316303A1/en
Priority to JP2003507879A priority patent/JP2004531899A/en
Priority to KR1020037016756A priority patent/KR100598477B1/en
Priority to EP02746596A priority patent/EP1399957A2/en
Publication of WO2003001582A2 publication Critical patent/WO2003001582A2/en
Publication of WO2003001582A3 publication Critical patent/WO2003001582A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • H10P50/613—
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/30—Polishing of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00—Electrolytic stripping of metallic layers or coatings
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H10P52/203—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

A microelectronic substrate and method for removing conductive material from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a conductive or semiconductive material with a recess having an initially sharp corner at the surface of the conductive material. The corner can be blunted or rounded, for example, by applying a voltage to an electrode in fluid communication with an electrolytic fluid disposed adjacent to the corner. Electrical current flowing through the corner from the electrode can oxidize the conductive material at the corner, and the oxidized material can be removed with a chemical etch process.
PCT/US2002/019496 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material Ceased WO2003001582A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2002316303A AU2002316303A1 (en) 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
JP2003507879A JP2004531899A (en) 2001-06-21 2002-06-20 Method and apparatus for electrically, mechanically and / or chemically removing conductive materials from microelectronic substrates
KR1020037016756A KR100598477B1 (en) 2001-06-21 2002-06-20 Microelectronic substrates having conductive material with blunt corner gaps and associated methods for removing conductive material
EP02746596A EP1399957A2 (en) 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/888,002 2001-06-21
US09/888,084 2001-06-21
US09/887,767 2001-06-21
US09/887,767 US7094131B2 (en) 2000-08-30 2001-06-21 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US09/888,002 US7160176B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US09/888,084 US7112121B2 (en) 2000-08-30 2001-06-21 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Publications (2)

Publication Number Publication Date
WO2003001582A2 WO2003001582A2 (en) 2003-01-03
WO2003001582A3 true WO2003001582A3 (en) 2003-10-30

Family

ID=27420529

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2002/019496 Ceased WO2003001582A2 (en) 2001-06-21 2002-06-20 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
PCT/US2002/019495 Ceased WO2003001581A2 (en) 2001-06-21 2002-06-20 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2002/019495 Ceased WO2003001581A2 (en) 2001-06-21 2002-06-20 Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

Country Status (6)

Country Link
EP (2) EP1399956A2 (en)
JP (2) JP4446271B2 (en)
KR (2) KR100598477B1 (en)
CN (1) CN100356523C (en)
AU (1) AU2002316303A1 (en)
WO (2) WO2003001582A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en) 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7077721B2 (en) 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7125477B2 (en) 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7303662B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7029365B2 (en) 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US7374644B2 (en) 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en) 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7303462B2 (en) 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US7137879B2 (en) 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
US7112270B2 (en) 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7186164B2 (en) 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US7520968B2 (en) 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7427340B2 (en) 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US7998335B2 (en) 2005-06-13 2011-08-16 Cabot Microelectronics Corporation Controlled electrochemical polishing method
US7422982B2 (en) 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459397A2 (en) * 1990-05-28 1991-12-04 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation and method of fabricating the same
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
US6187651B1 (en) * 1998-05-07 2001-02-13 Samsung Electronics Co., Ltd. Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids
US20020070126A1 (en) * 2000-09-19 2002-06-13 Shuzo Sato Polishing method, polishing apparatus, plating method, and plating apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241129A (en) * 1988-03-23 1989-09-26 Toshiba Corp Manufacture of semiconductor device
JPH10189909A (en) * 1996-12-27 1998-07-21 Texas Instr Japan Ltd Dielectric capacitor, dielectric memory device, and manufacturing method thereof
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US6171467B1 (en) * 1997-11-25 2001-01-09 The John Hopkins University Electrochemical-control of abrasive polishing and machining rates
US6143155A (en) * 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
JP4513145B2 (en) * 1999-09-07 2010-07-28 ソニー株式会社 Semiconductor device manufacturing method and polishing method
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6867448B1 (en) * 2000-08-31 2005-03-15 Micron Technology, Inc. Electro-mechanically polished structure
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0459397A2 (en) * 1990-05-28 1991-12-04 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation and method of fabricating the same
US6187651B1 (en) * 1998-05-07 2001-02-13 Samsung Electronics Co., Ltd. Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids
US6121152A (en) * 1998-06-11 2000-09-19 Integrated Process Equipment Corporation Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly
US20020070126A1 (en) * 2000-09-19 2002-06-13 Shuzo Sato Polishing method, polishing apparatus, plating method, and plating apparatus

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANONYMOUS: "Electrolytic Process for Metal Pattern Generation. June 1974.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 17, no. 1, 1 June 1974 (1974-06-01), New York, US, pages 271 - 272, XP002235691 *
ANONYMOUS: "Low Temperature Methods for Rounding Silicon Nozzles. July 1977.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 20, no. 2, 1 July 1977 (1977-07-01), New York, US, pages 810 - 811, XP002235692 *
ANONYMOUS: "Rounding of Square Shape Holes in Silicon Wafers. January 1977.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 19, no. 8, 1 January 1977 (1977-01-01), New York, US, pages 3042, XP002235690 *

Also Published As

Publication number Publication date
JP2004531899A (en) 2004-10-14
EP1399956A2 (en) 2004-03-24
JP4446271B2 (en) 2010-04-07
WO2003001581A3 (en) 2003-10-30
CN1516894A (en) 2004-07-28
AU2002316303A1 (en) 2003-01-08
KR20040010773A (en) 2004-01-31
WO2003001581A2 (en) 2003-01-03
CN100356523C (en) 2007-12-19
KR100598477B1 (en) 2006-07-11
EP1399957A2 (en) 2004-03-24
JP2004531649A (en) 2004-10-14
WO2003001582A2 (en) 2003-01-03
KR20040021616A (en) 2004-03-10
KR100663662B1 (en) 2007-01-03

Similar Documents

Publication Publication Date Title
WO2003001582A3 (en) Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
WO2003038230A3 (en) Electrochemical process for effecting redox-enhanced oil recovery
WO2005013363A3 (en) Circuit arrangement placed on a substrate and method for producing the same
JP2004531899A5 (en)
ATE366641T1 (en) PROCESS CONTROL IN ELECTROCHEMICAL MECHANICAL POLISHING
WO2002041369A3 (en) Electropolishing and chemical mechanical planarization
ATE193337T1 (en) ELECTROLYTIC PROCESS FOR CLEANING ELECTRICALLY CONDUCTIVE SURFACES
WO2001013100A3 (en) Method and apparatus for multiple frequency multipole
AU2002336089A1 (en) Segmented counterelectrode for an electrolytic treatment system
JP2004531649A5 (en)
WO2007120283A3 (en) Transistor with immersed contacts and methods of forming thereof
EP1160846A3 (en) Method of application of electrical biasing to enhance metal deposition
TW342522B (en) Contactless real-time in-situ monitoring of a chemical etching process
WO2003085174A3 (en) Device and method for removing surface areas of a component
WO2001007685A3 (en) Method for continuous nickel-plating of an aluminium conductor and corresponding device
WO2003040688A3 (en) 2d/3d chemical sensors and methods of fabricating and operating the same
ATE257063T1 (en) METHOD FOR MODIFYING WOODEN SURFACES BY ELECTRICAL DISCHARGE UNDER ATMOSPHERE PRESSURE
CA2462295A1 (en) Elemental silicon nanoparticle plating and method for the same
WO1999040600A3 (en) Gate electrode structure for field emission devices and method of making
WO2006104817A3 (en) Method for reducing dielectric overetch when making contact to conductive features
WO2003012175A3 (en) Method for selectively electroplating a strip-shaped, metal support material
WO2003012172A3 (en) Method and device for producing a textured metal strip
WO2004055852A3 (en) Field emission device, and method of manufacturing such a device
WO2007094869A3 (en) Electrochemical method for ecmp polishing pad conditioning
WO2006071766A3 (en) Method and apparatus for magnetic pulse forming

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 028122380

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2003507879

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020037016756

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002746596

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2004107899

Country of ref document: RU

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2004108141

Country of ref document: RU

Kind code of ref document: A

WWP Wipo information: published in national office

Ref document number: 2002746596

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642