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AU2002235281A1 - Inverse resist coating process - Google Patents

Inverse resist coating process

Info

Publication number
AU2002235281A1
AU2002235281A1 AU2002235281A AU3528102A AU2002235281A1 AU 2002235281 A1 AU2002235281 A1 AU 2002235281A1 AU 2002235281 A AU2002235281 A AU 2002235281A AU 3528102 A AU3528102 A AU 3528102A AU 2002235281 A1 AU2002235281 A1 AU 2002235281A1
Authority
AU
Australia
Prior art keywords
coating process
resist coating
inverse
inverse resist
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002235281A
Inventor
Bharath Rangarajan
Ramkumar Subramanian
Michael K. Templeton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2002235281A1 publication Critical patent/AU2002235281A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P76/403—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10P76/202—
    • H10P76/2041—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AU2002235281A 2000-10-24 2001-10-23 Inverse resist coating process Abandoned AU2002235281A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US24279100P 2000-10-24 2000-10-24
US60/242,791 2000-10-24
US09/973,240 2001-10-09
US09/973,240 US20020155389A1 (en) 2000-10-24 2001-10-09 Inverse resist coating process
PCT/US2001/051280 WO2002037183A2 (en) 2000-10-24 2001-10-23 Inverse resist coating process

Publications (1)

Publication Number Publication Date
AU2002235281A1 true AU2002235281A1 (en) 2002-05-15

Family

ID=26935348

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002235281A Abandoned AU2002235281A1 (en) 2000-10-24 2001-10-23 Inverse resist coating process

Country Status (4)

Country Link
US (2) US20020155389A1 (en)
AU (1) AU2002235281A1 (en)
TW (1) TW522462B (en)
WO (1) WO2002037183A2 (en)

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US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
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US20100183851A1 (en) * 2009-01-21 2010-07-22 Yi Cao Photoresist Image-forming Process Using Double Patterning
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US8822347B2 (en) * 2009-04-27 2014-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Wet soluble lithography
US8304179B2 (en) * 2009-05-11 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device using a modified photosensitive layer
US8758987B2 (en) 2009-09-02 2014-06-24 Micron Technology, Inc. Methods of forming a reversed pattern in a substrate
JP5889568B2 (en) * 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Composition for forming tungsten oxide film and method for producing tungsten oxide film using the same
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US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9105295B2 (en) 2013-02-25 2015-08-11 HGST Netherlands B.V. Pattern tone reversal
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9418836B2 (en) 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
JP6893613B2 (en) 2015-04-13 2021-06-23 東京エレクトロン株式会社 Systems and methods for flattening substrates
US10936778B2 (en) 2016-03-28 2021-03-02 Motivo, Inc. And optimization of physical cell placement
US9959380B2 (en) * 2016-03-28 2018-05-01 Motivo, Inc. Integrated circuit design systems and methods
CN111051570B (en) 2017-09-06 2022-05-10 默克专利股份有限公司 Spin-on inorganic oxide-containing compositions and filler materials useful as hardmasks with improved thermal stability
US10304744B1 (en) 2018-05-15 2019-05-28 International Business Machines Corporation Inverse tone direct print EUV lithography enabled by selective material deposition
US11557479B2 (en) * 2020-03-19 2023-01-17 Tokyo Electron Limited Methods for EUV inverse patterning in processing of microelectronic workpieces

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JP2000208488A (en) * 1999-01-12 2000-07-28 Kawasaki Steel Corp Etching method
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JP3874989B2 (en) * 2000-03-21 2007-01-31 シャープ株式会社 Pattern formation method

Also Published As

Publication number Publication date
US20020155389A1 (en) 2002-10-24
WO2002037183A3 (en) 2003-04-17
US20050164133A1 (en) 2005-07-28
TW522462B (en) 2003-03-01
US7943289B2 (en) 2011-05-17
WO2002037183A2 (en) 2002-05-10

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