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AU2002229010A1 - Photoacid generators in photoresist compositions for microlithography - Google Patents

Photoacid generators in photoresist compositions for microlithography

Info

Publication number
AU2002229010A1
AU2002229010A1 AU2002229010A AU2901002A AU2002229010A1 AU 2002229010 A1 AU2002229010 A1 AU 2002229010A1 AU 2002229010 A AU2002229010 A AU 2002229010A AU 2901002 A AU2901002 A AU 2901002A AU 2002229010 A1 AU2002229010 A1 AU 2002229010A1
Authority
AU
Australia
Prior art keywords
microlithography
photoacid generators
photoresist compositions
photoresist
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002229010A
Other languages
English (en)
Inventor
Viacheslav Alexandrovich Petrov
Iii Frank L. Schadt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2002229010A1 publication Critical patent/AU2002229010A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AU2002229010A 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography Abandoned AU2002229010A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24739300P 2000-11-09 2000-11-09
US60/247,393 2000-11-09
PCT/US2001/048006 WO2002039186A2 (fr) 2000-11-09 2001-10-31 Generateurs photoacides utilises dans des compositions de photoresist pour la microlithographie

Publications (1)

Publication Number Publication Date
AU2002229010A1 true AU2002229010A1 (en) 2002-05-21

Family

ID=22934752

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002229010A Abandoned AU2002229010A1 (en) 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography

Country Status (7)

Country Link
EP (1) EP1332406A2 (fr)
JP (1) JP2004537740A (fr)
KR (1) KR20040004429A (fr)
CN (1) CN1575438A (fr)
AU (1) AU2002229010A1 (fr)
TW (1) TW581935B (fr)
WO (1) WO2002039186A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4701231B2 (ja) * 2002-02-13 2011-06-15 富士フイルム株式会社 電子線、ｅｕｖ又はｘ線用ネガ型レジスト組成物及びそれを用いたパターン形成方法
US20040265733A1 (en) * 2003-06-30 2004-12-30 Houlihan Francis M. Photoacid generators
JP4411042B2 (ja) 2003-09-19 2010-02-10 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US20050148679A1 (en) * 2003-12-29 2005-07-07 Chingfan Chiu Aryl sulfonium salt, polymerizable composition and polymerization method of the same
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP2010134126A (ja) * 2008-12-03 2010-06-17 Jsr Corp 感放射線性組樹脂組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0698230A1 (fr) * 1992-10-29 1996-02-28 International Business Machines Corporation Photoresist a amplification chimique
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
JP4327360B2 (ja) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
AU4678100A (en) * 1999-05-04 2000-11-17 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP2001255647A (ja) * 2000-03-13 2001-09-21 Daikin Ind Ltd エネルギー線照射によりカチオンまたは酸を発生するフルオロアルキルオニウム塩型のカチオンまたは酸発生剤

Also Published As

Publication number Publication date
JP2004537740A (ja) 2004-12-16
WO2002039186A2 (fr) 2002-05-16
TW581935B (en) 2004-04-01
WO2002039186A3 (fr) 2002-11-21
EP1332406A2 (fr) 2003-08-06
KR20040004429A (ko) 2004-01-13
CN1575438A (zh) 2005-02-02

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