[go: up one dir, main page]

AU2002229001A1 - Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same - Google Patents

Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Info

Publication number
AU2002229001A1
AU2002229001A1 AU2002229001A AU2900102A AU2002229001A1 AU 2002229001 A1 AU2002229001 A1 AU 2002229001A1 AU 2002229001 A AU2002229001 A AU 2002229001A AU 2900102 A AU2900102 A AU 2900102A AU 2002229001 A1 AU2002229001 A1 AU 2002229001A1
Authority
AU
Australia
Prior art keywords
silicon carbide
devices
methods
edge termination
incorporating same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002229001A
Inventor
Ranbir Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2002229001A1 publication Critical patent/AU2002229001A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
AU2002229001A 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same Abandoned AU2002229001A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/723,710 2000-11-28
US09/723,710 US6573128B1 (en) 2000-11-28 2000-11-28 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
PCT/US2001/047924 WO2002045177A2 (en) 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Publications (1)

Publication Number Publication Date
AU2002229001A1 true AU2002229001A1 (en) 2002-06-11

Family

ID=24907346

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002229001A Abandoned AU2002229001A1 (en) 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Country Status (8)

Country Link
US (2) US6573128B1 (en)
EP (1) EP1354362B1 (en)
JP (1) JP4115275B2 (en)
KR (1) KR100816541B1 (en)
CN (1) CN100370627C (en)
AU (1) AU2002229001A1 (en)
CA (1) CA2425787C (en)
WO (1) WO2002045177A2 (en)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7690020B2 (en) * 2000-06-30 2010-03-30 Time Warner Cable, A Division Of Time Warner Entertainment Company, L.P. Hybrid central/distributed VOD system with tiered content structure
US6909119B2 (en) * 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6844251B2 (en) * 2001-03-23 2005-01-18 Krishna Shenai Method of forming a semiconductor device with a junction termination layer
WO2002084745A2 (en) * 2001-04-11 2002-10-24 Silicon Wireless Corporation Power semiconductor devices and methods of forming same
US20050045982A1 (en) * 2002-03-22 2005-03-03 Krishna Shenai Semiconductor device with novel junction termination
US7262434B2 (en) * 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US7026650B2 (en) * 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7105875B2 (en) * 2004-06-03 2006-09-12 Wide Bandgap, Llc Lateral power diodes
US7205629B2 (en) * 2004-06-03 2007-04-17 Widebandgap Llc Lateral super junction field effect transistor
US7019344B2 (en) * 2004-06-03 2006-03-28 Ranbir Singh Lateral drift vertical metal-insulator semiconductor field effect transistor
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7304363B1 (en) 2004-11-26 2007-12-04 United States Of America As Represented By The Secretary Of The Army Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device
JP4186919B2 (en) * 2004-12-07 2008-11-26 三菱電機株式会社 Semiconductor device
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US8901699B2 (en) * 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
CA2571904A1 (en) * 2006-02-15 2007-08-15 Fio Corporation System and method of detecting pathogens
US7449762B1 (en) 2006-04-07 2008-11-11 Wide Bandgap Llc Lateral epitaxial GaN metal insulator semiconductor field effect transistor
US8269262B2 (en) * 2006-05-02 2012-09-18 Ss Sc Ip Llc Vertical junction field effect transistor with mesa termination and method of making the same
US7274083B1 (en) 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP2009545885A (en) * 2006-07-31 2009-12-24 ヴィシェイ−シリコニックス Molybdenum barrier metal for SiC Schottky diode and manufacturing method
JP5109333B2 (en) * 2006-10-26 2012-12-26 サンケン電気株式会社 Power supply
CA2580589C (en) * 2006-12-19 2016-08-09 Fio Corporation Microfluidic detection system
US7843030B2 (en) * 2007-03-22 2010-11-30 Ranbir Singh Method, apparatus, material, and system of using a high gain avalanche photodetector transistor
US8360321B2 (en) 2007-04-02 2013-01-29 Fio Corporation System and method of deconvolving multiplexed fluorescence spectral signals generated by quantum dot optical coding technology
US20080297169A1 (en) * 2007-05-31 2008-12-04 Greenquist Alfred C Particle Fraction Determination of A Sample
US8597729B2 (en) 2007-06-22 2013-12-03 Fio Corporation Systems and methods for manufacturing quantum dot-doped polymer microbeads
US8551786B2 (en) * 2007-07-09 2013-10-08 Fio Corporation Systems and methods for enhancing fluorescent detection of target molecules in a test sample
KR101720040B1 (en) * 2007-07-23 2017-03-27 피오 코포레이션 A method and system for collating, storing, analyzing and enabling access to collected and analyzed data associated with biological and environmental test subjects
CA2702367C (en) * 2007-10-12 2012-08-21 Fio Corporation Flow focusing method and system for forming concentrated volumes of microbeads, and microbeads formed further thereto
JP5638739B2 (en) * 2008-03-07 2014-12-10 富士電機株式会社 Manufacturing method of semiconductor device
CA2729023C (en) 2008-06-25 2013-02-26 Fio Corporation Bio-threat alert system
MX2011002235A (en) 2008-08-29 2011-04-05 Fio Corp A single-use handheld diagnostic test device, and an associated system and method for testing biological and environmental test samples.
US7800196B2 (en) * 2008-09-30 2010-09-21 Northrop Grumman Systems Corporation Semiconductor structure with an electric field stop layer for improved edge termination capability
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
CN102348986B (en) 2009-01-13 2015-05-06 Fio公司 Handheld diagnostic test device and method for use in combination with electronic devices and test cartridges in rapid diagnostic tests
KR101375494B1 (en) * 2010-01-08 2014-03-17 미쓰비시덴키 가부시키가이샤 Epitaxial wafer and semiconductor element
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
CN103199104B (en) * 2013-03-05 2016-04-27 矽力杰半导体技术(杭州)有限公司 A kind of crystal circle structure and apply its power device
US9035322B2 (en) 2013-03-26 2015-05-19 Infineon Technologies Ag Silicon carbide device and a method for manufacturing a silicon carbide device
US9257511B2 (en) 2013-03-26 2016-02-09 Infineon Technologies Ag Silicon carbide device and a method for forming a silicon carbide device
CN105185820B (en) * 2015-08-18 2017-12-12 华中科技大学 A kind of semiconductor opening switch based on carborundum and preparation method thereof
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
JP7112099B2 (en) 2016-12-15 2022-08-03 グリフィス・ユニバーシティ silicon carbide schottky diode
EP3584822A4 (en) * 2017-02-20 2020-12-02 Hitachi Metals, Ltd. SILICON CARBIDE LAMINATED SUBSTRATE AND MANUFACTURING METHOD FOR IT
CN107452723B (en) * 2017-07-26 2023-09-15 济南市半导体元件实验所 A high-voltage and high-power silicon carbide Schottky rectifier bridge and its preparation method
SE541290C2 (en) 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid
SE541291C2 (en) 2017-09-15 2019-06-11 Ascatron Ab Feeder design with high current capability
SE541466C2 (en) 2017-09-15 2019-10-08 Ascatron Ab A concept for silicon carbide power devices
SE541402C2 (en) 2017-09-15 2019-09-17 Ascatron Ab Integration of a schottky diode with a mosfet
CN109473485B (en) * 2018-12-29 2023-07-04 重庆伟特森电子科技有限公司 Silicon carbide diode and method of making the same
JP7626066B2 (en) * 2019-06-19 2025-02-04 住友電気工業株式会社 Silicon carbide epitaxial substrate
CN114005739A (en) * 2021-10-29 2022-02-01 重庆平创半导体研究院有限责任公司 Silicon carbide JBS device and manufacturing method thereof
CN114530487A (en) * 2021-12-30 2022-05-24 南京中电芯谷高频器件产业技术研究院有限公司 Preparation method of diamond Schottky diode with edge terminal

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL230857A (en) 1958-08-26
NL108185C (en) 1958-08-27
BE760009A (en) 1969-12-10 1971-05-17 Western Electric Co HIGH FREQUENCY OSCILLATOR
US4096622A (en) 1975-07-31 1978-06-27 General Motors Corporation Ion implanted Schottky barrier diode
US4329699A (en) 1979-03-26 1982-05-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
CA1189634A (en) 1981-09-11 1985-06-25 Yoshihito Amemiya Low-loss and high-speed diodes
JPS58148469A (en) 1982-02-27 1983-09-03 Nippon Telegr & Teleph Corp <Ntt> Schottky diode
US4638551A (en) 1982-09-24 1987-01-27 General Instrument Corporation Schottky barrier device and method of manufacture
US4816879A (en) 1982-12-08 1989-03-28 North American Philips Corporation, Signetics Division Schottky-type rectifier having controllable barrier height
JPS59232467A (en) 1983-06-16 1984-12-27 Toshiba Corp Schottky barrier diode with guard ring
US4762806A (en) 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
CA1270931C (en) 1984-06-15 1990-06-26 Heat-resistant thin film photoelectric converter with diffusion blocking layer
US4742377A (en) 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
US4738937A (en) 1985-10-22 1988-04-19 Hughes Aircraft Company Method of making ohmic contact structure
JPS62279672A (en) 1986-05-28 1987-12-04 Kanegafuchi Chem Ind Co Ltd semiconductor equipment
US4907040A (en) 1986-09-17 1990-03-06 Konishiroku Photo Industry Co., Ltd. Thin film Schottky barrier device
JPH0671074B2 (en) 1986-11-25 1994-09-07 日本電気株式会社 Semiconductor device
US4901120A (en) * 1987-06-10 1990-02-13 Unitrode Corporation Structure for fast-recovery bipolar devices
US4875083A (en) 1987-10-26 1989-10-17 North Carolina State University Metal-insulator-semiconductor capacitor formed on silicon carbide
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5270252A (en) 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
TW286435B (en) 1994-07-27 1996-09-21 Siemens Ag
JPH0897441A (en) 1994-09-26 1996-04-12 Fuji Electric Co Ltd Method for manufacturing silicon carbide Schottky diode
US5967795A (en) 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
DE19616605C2 (en) 1996-04-25 1998-03-26 Siemens Ag Schottky diode arrangement and method of manufacture
US6002159A (en) 1996-07-16 1999-12-14 Abb Research Ltd. SiC semiconductor device comprising a pn junction with a voltage absorbing edge
US5801836A (en) 1996-07-16 1998-09-01 Abb Research Ltd. Depletion region stopper for PN junction in silicon carbide
SE9700156D0 (en) 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
CN1131548C (en) * 1997-04-04 2003-12-17 松下电器产业株式会社 Ohmic electrode forming method and semiconductor device
SE9702220D0 (en) 1997-06-11 1997-06-11 Abb Research Ltd A semiconductor device with a junction termination and a method of production thereof
US5932894A (en) 1997-06-26 1999-08-03 Abb Research Ltd. SiC semiconductor device comprising a pn junction
SE9802909L (en) 1998-08-31 1999-10-13 Abb Research Ltd Method for preparing a pn junction for a SiC semiconductor device and a SiC semiconductor pn junction device
EP1064684A1 (en) * 1999-01-15 2001-01-03 Infineon Technologies AG Edge termination for a semiconductor component, schottky diode with an end termination and method for producing a schottky diode
US6313482B1 (en) * 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
FR2803103B1 (en) 1999-12-24 2003-08-29 St Microelectronics Sa SCHOTTKY DIODE ON SILICON CARBIDE SUBSTRATE

Also Published As

Publication number Publication date
US6573128B1 (en) 2003-06-03
CN1663053A (en) 2005-08-31
JP4115275B2 (en) 2008-07-09
WO2002045177A2 (en) 2002-06-06
CN100370627C (en) 2008-02-20
WO2002045177A3 (en) 2003-01-30
EP1354362B1 (en) 2013-01-16
JP2004515080A (en) 2004-05-20
EP1354362A2 (en) 2003-10-22
KR100816541B1 (en) 2008-03-26
KR20040055717A (en) 2004-06-26
US20030045045A1 (en) 2003-03-06
CA2425787A1 (en) 2002-06-06
CA2425787C (en) 2014-09-30
US6673662B2 (en) 2004-01-06

Similar Documents

Publication Publication Date Title
AU2002229001A1 (en) Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same
AU2001288555A1 (en) Epitaxial template and barrier for the integration of functional thin film heterostructures on silicon
AU2002252047A1 (en) Gallium nitride material devices including backside vias and methods of fabrication
AU2430401A (en) Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby
AU2001262348A1 (en) Lateral semiconductor device with low on-resistance and method of making the same
AU2152000A (en) Fabrication of gallium nitride layers on silicon
SG112879A1 (en) Gan single crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same
AU2002363469A1 (en) Sintered polycrystalline gallium nitride
AU4550399A (en) Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions
AU7699300A (en) Silicon carbide epitaxial layers grown on substrates offcut towards &amp;lt;1100&amp;gt;
AU2001286905A1 (en) Trench schottky rectifier
AU4318600A (en) Sic wafer, sic semiconductor device and sic wafer production method
AU2001291257A1 (en) Multigate semiconductor device with vertical channel current and method of fabrication
AU4524701A (en) Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
AU2001280492A1 (en) Schottky diode having increased active surface area and method of fabrication
AU2001273116A1 (en) Semiconductor device and method of formation
EP1191602A3 (en) Method of forming trench MOS device and termination structure
AU4702000A (en) Growth of epitaxial semiconductor material with improved crystallographic properties
AU2001236076A1 (en) Production method of iii nitride compound semiconductor substrate and semiconductor device
EP1291377B8 (en) Silicone compound and cosmetic preparation
AU2001218182A1 (en) Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
AU2002230986A1 (en) Trench schottky barrier rectifier and method of making the same
AU2002316720A1 (en) Epitaxial semiconductor on insulator (soi) structures and devices
AU2692500A (en) Semiconductor device and method of manufacture thereof
AU2002228766A1 (en) Semiconductor device and method of making same