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AU4318600A - Sic wafer, sic semiconductor device and sic wafer production method - Google Patents

Sic wafer, sic semiconductor device and sic wafer production method

Info

Publication number
AU4318600A
AU4318600A AU43186/00A AU4318600A AU4318600A AU 4318600 A AU4318600 A AU 4318600A AU 43186/00 A AU43186/00 A AU 43186/00A AU 4318600 A AU4318600 A AU 4318600A AU 4318600 A AU4318600 A AU 4318600A
Authority
AU
Australia
Prior art keywords
sic
sic wafer
semiconductor device
production method
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU43186/00A
Inventor
Tsunenobu Kimoto
Hiroyuki Matsunami
Hiromu Shiomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Corp
Kansai Electric Power Co Inc
Sixon Inc
Sumitomo Electric Industries Ltd
Original Assignee
Mitsubishi Corp
Kansai Electric Power Co Inc
Sixon Inc
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Corp, Kansai Electric Power Co Inc, Sixon Inc, Sumitomo Electric Industries Ltd filed Critical Mitsubishi Corp
Publication of AU4318600A publication Critical patent/AU4318600A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
AU43186/00A 1999-05-07 2000-05-08 Sic wafer, sic semiconductor device and sic wafer production method Abandoned AU4318600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12747199A JP4185215B2 (en) 1999-05-07 1999-05-07 SiC wafer, SiC semiconductor device, and method of manufacturing SiC wafer
JP11/127471 1999-05-07
PCT/JP2000/002932 WO2000068474A1 (en) 1999-05-07 2000-05-08 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND SiC WAFER PRODUCTION METHOD

Publications (1)

Publication Number Publication Date
AU4318600A true AU4318600A (en) 2000-11-21

Family

ID=14960757

Family Applications (1)

Application Number Title Priority Date Filing Date
AU43186/00A Abandoned AU4318600A (en) 1999-05-07 2000-05-08 Sic wafer, sic semiconductor device and sic wafer production method

Country Status (3)

Country Link
JP (1) JP4185215B2 (en)
AU (1) AU4318600A (en)
WO (1) WO2000068474A1 (en)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US9059193B2 (en) 2010-01-08 2015-06-16 Mitsubishi Electric Corporation Epitaxial wafer and semiconductor element

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002220299A (en) * 2001-01-19 2002-08-09 Hoya Corp Single crystal SiC and method of manufacturing the same, SiC semiconductor device, and SiC composite material
JP2002231820A (en) * 2001-01-30 2002-08-16 Sanyo Electric Co Ltd Power semiconductor device and method for manufacturing semiconductor device
JP2002255692A (en) * 2001-03-02 2002-09-11 Nippon Steel Corp Silicon carbide epitaxial substrate and method of manufacturing the same
JP4470333B2 (en) * 2001-03-05 2010-06-02 住友電気工業株式会社 Method for forming oxide film in SiC semiconductor and SiC semiconductor device
JP4581270B2 (en) * 2001-03-05 2010-11-17 住友電気工業株式会社 SiC semiconductor ion-implanted layer and method of manufacturing the same
JP5020436B2 (en) * 2001-03-09 2012-09-05 新日本製鐵株式会社 Field effect transistor
JP2002280394A (en) * 2001-03-21 2002-09-27 Nippon Steel Corp Field effect transistor
JP2002368015A (en) * 2001-06-06 2002-12-20 Nippon Steel Corp Field effect transistor
JP3812396B2 (en) * 2001-10-04 2006-08-23 株式会社デンソー Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
EP1306890A2 (en) 2001-10-25 2003-05-02 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate and device comprising SiC and method for fabricating the same
JP2003234301A (en) * 2001-10-25 2003-08-22 Matsushita Electric Ind Co Ltd Semiconductor substrate, semiconductor element and method of manufacturing the same
US6849874B2 (en) 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
KR20030035152A (en) 2001-10-30 2003-05-09 주식회사 하이닉스반도체 Method for fabricating semiconductor wafer
KR20030058571A (en) * 2001-12-31 2003-07-07 주식회사 하이닉스반도체 A method for manufacturing a semiconductor device
EP1491662B1 (en) * 2002-03-19 2012-02-22 Central Research Institute of Electric Power Industry METHOD FOR PREPARING SiC CRYSTAL
JP4224253B2 (en) * 2002-04-24 2009-02-12 パナソニック株式会社 Semiconductor device and manufacturing method thereof
JP3761546B2 (en) * 2003-08-19 2006-03-29 株式会社Ｎｅｏｍａｘ Method for manufacturing SiC single crystal substrate
JP4139306B2 (en) * 2003-10-02 2008-08-27 東洋炭素株式会社 Vertical hot wall CVD epitaxial apparatus and SiC epitaxial growth method
CN100524624C (en) * 2004-01-26 2009-08-05 昭和电工株式会社 Group III nitride semiconductor multilayer structure
EP1709670B1 (en) 2004-01-26 2012-09-12 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
US7641736B2 (en) 2005-02-22 2010-01-05 Hitachi Metals, Ltd. Method of manufacturing SiC single crystal wafer
JP4585359B2 (en) * 2005-04-05 2010-11-24 新日本製鐵株式会社 Method for producing silicon carbide single crystal
JP4954593B2 (en) * 2006-04-18 2012-06-20 新日本製鐵株式会社 Epitaxial silicon carbide single crystal substrate manufacturing method, and device using the obtained epitaxial silicon carbide single crystal substrate
JP4879686B2 (en) * 2006-09-21 2012-02-22 新日本製鐵株式会社 Silicon carbide single crystal manufacturing method, silicon carbide single crystal ingot, and silicon carbide single crystal substrate
JP4954654B2 (en) * 2006-09-21 2012-06-20 新日本製鐵株式会社 Epitaxial silicon carbide single crystal substrate and manufacturing method thereof
JP4937685B2 (en) * 2006-09-21 2012-05-23 新日本製鐵株式会社 Epitaxial silicon carbide single crystal substrate and manufacturing method thereof
WO2009013914A1 (en) * 2007-07-26 2009-01-29 Ecotron Co., Ltd. Sic epitaxial substrate and process for producing the same
JP5307381B2 (en) 2007-11-12 2013-10-02 Ｈｏｙａ株式会社 Semiconductor device and semiconductor device manufacturing method
CN101663741B (en) * 2008-02-22 2012-11-07 住友电气工业株式会社 Semiconductor device and method for manufacturing semiconductor device
JP5263900B2 (en) * 2008-02-25 2013-08-14 公益財団法人地球環境産業技術研究機構 Method for growing single crystal SiC
JP4987792B2 (en) * 2008-04-17 2012-07-25 新日本製鐵株式会社 Epitaxial silicon carbide single crystal substrate manufacturing method
JP5458509B2 (en) * 2008-06-04 2014-04-02 日立金属株式会社 Silicon carbide semiconductor substrate
US8536582B2 (en) * 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
JP4978637B2 (en) * 2009-02-12 2012-07-18 株式会社デンソー Method for producing silicon carbide single crystal
JP4866935B2 (en) 2009-04-28 2012-02-01 株式会社沖データ Cubic silicon carbide single crystal thin film manufacturing method and semiconductor device
JP5687422B2 (en) * 2009-11-30 2015-03-18 株式会社東芝 Semiconductor device
US8916880B2 (en) 2010-08-24 2014-12-23 Mitsubishi Electric Corporation Silicon carbide epitaxial wafer and semiconductor device
JP5921089B2 (en) * 2011-06-01 2016-05-24 三菱電機株式会社 Epitaxial wafer manufacturing method and semiconductor device manufacturing method
JP5637086B2 (en) * 2011-07-07 2014-12-10 三菱電機株式会社 Epitaxial wafer and semiconductor device
JP5742657B2 (en) * 2011-10-20 2015-07-01 住友電気工業株式会社 Silicon carbide semiconductor device and manufacturing method thereof
JP5545310B2 (en) * 2012-03-08 2014-07-09 三菱電機株式会社 Silicon carbide epitaxial wafer manufacturing method, silicon carbide epitaxial wafer, and silicon carbide semiconductor device
JP5612035B2 (en) * 2012-07-31 2014-10-22 株式会社東芝 Semiconductor device
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
TW201417149A (en) * 2012-10-31 2014-05-01 Ｌｇ伊諾特股份有限公司 Epitaxial wafer
TW201417150A (en) * 2012-10-31 2014-05-01 Ｌｇ伊諾特股份有限公司 Epitaxial wafer
CN104919571B (en) * 2012-11-30 2018-01-23 Lg伊诺特有限公司 Epitaxial wafers, switching elements and light emitting elements using them
JP2014116350A (en) * 2012-12-06 2014-06-26 Sumitomo Electric Ind Ltd Method of manufacturing silicon carbide semiconductor device
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
JP2014154587A (en) * 2013-02-05 2014-08-25 Sumitomo Electric Ind Ltd Silicon carbide semiconductor substrate manufacturing method and silicon carbide semiconductor device manufacturing method
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP5521242B1 (en) * 2013-06-08 2014-06-11 エルシード株式会社 SiC material manufacturing method and SiC material laminate
WO2015005064A1 (en) * 2013-07-09 2015-01-15 富士電機株式会社 Method for producing silicon carbide semiconductor device, and silicon carbide semiconductor device
JP5604577B2 (en) * 2013-10-01 2014-10-08 昭和電工株式会社 SiC epitaxial wafer
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6100233B2 (en) 2014-12-26 2017-03-22 株式会社東芝 Semiconductor device
JP6584253B2 (en) 2015-09-16 2019-10-02 ローム株式会社 SiC epitaxial wafer, SiC epitaxial wafer manufacturing apparatus, SiC epitaxial wafer manufacturing method, and semiconductor device
JP6351874B2 (en) * 2015-12-02 2018-07-04 三菱電機株式会社 Silicon carbide epitaxial substrate and silicon carbide semiconductor device
JP6743905B2 (en) 2016-11-28 2020-08-19 三菱電機株式会社 Silicon carbide semiconductor wafer, silicon carbide semiconductor chip, and method for manufacturing silicon carbide semiconductor device
JP6237869B2 (en) * 2016-12-20 2017-11-29 住友電気工業株式会社 ingot
KR102339608B1 (en) * 2017-09-05 2021-12-14 주식회사 엘엑스세미콘 Epitaxial wafer and method for fabricating the same
KR102474331B1 (en) * 2017-09-05 2022-12-07 주식회사 엘엑스세미콘 Epitaxial wafer and method for fabricating the same
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
JP7004586B2 (en) * 2018-01-30 2022-01-21 富士電機株式会社 Silicon Carbide Semiconductor Device and Method for Manufacturing Silicon Carbide Semiconductor Device
KR102610826B1 (en) * 2018-08-14 2023-12-07 주식회사 엘엑스세미콘 Epitaxial wafer and method for fabricating the same
CN112420803A (en) * 2019-08-23 2021-02-26 比亚迪股份有限公司 Silicon carbide substrate, preparation method thereof, and semiconductor device
JP6850845B2 (en) * 2019-09-03 2021-03-31 ローム株式会社 SiC epitaxial wafers and semiconductor devices
KR102777182B1 (en) * 2020-07-24 2025-03-10 울프스피드, 인크. Vertical SiC semiconductor devices with improved robustness
DE112020007709T5 (en) * 2020-10-22 2023-08-03 Mitsubishi Electric Corporation semiconductor device
JP7660469B2 (en) * 2021-08-31 2025-04-11 株式会社東芝 Wafer, semiconductor device, wafer manufacturing method, and semiconductor device manufacturing method
JP7779142B2 (en) * 2021-12-27 2025-12-03 住友電気工業株式会社 Carrier concentration measurement method, silicon carbide epitaxial substrate manufacturing method, and silicon carbide semiconductor device manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948792B2 (en) * 1982-08-17 1984-11-28 工業技術院長 Silicon carbide crystal growth method
JPS62214613A (en) * 1986-03-17 1987-09-21 Fujitsu Ltd Formation of sio buffer layer
JP3267983B2 (en) * 1991-02-14 2002-03-25 株式会社東芝 Semiconductor light emitting device and method of manufacturing the same
JP2804860B2 (en) * 1991-04-18 1998-09-30 新日本製鐵株式会社 SiC single crystal and growth method thereof
US5923058A (en) * 1995-11-09 1999-07-13 Northrop Grumman Corporation Aluminum gallium nitride heterojunction bipolar transistor
JP3848700B2 (en) * 1996-05-10 2006-11-22 株式会社イオン工学研究所 Silicon carbide semiconductor device
JP3590485B2 (en) * 1996-08-26 2004-11-17 新日本製鐵株式会社 Single crystal silicon carbide ingot and method for producing the same
JP3180895B2 (en) * 1997-08-18 2001-06-25 富士電機株式会社 Method for manufacturing silicon carbide semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059193B2 (en) 2010-01-08 2015-06-16 Mitsubishi Electric Corporation Epitaxial wafer and semiconductor element

Also Published As

Publication number Publication date
JP2000319099A (en) 2000-11-21
JP4185215B2 (en) 2008-11-26
WO2000068474A1 (en) 2000-11-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase