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AU2002213173A1 - Semiconductor structure having high dielectric constant material - Google Patents

Semiconductor structure having high dielectric constant material

Info

Publication number
AU2002213173A1
AU2002213173A1 AU2002213173A AU1317302A AU2002213173A1 AU 2002213173 A1 AU2002213173 A1 AU 2002213173A1 AU 2002213173 A AU2002213173 A AU 2002213173A AU 1317302 A AU1317302 A AU 1317302A AU 2002213173 A1 AU2002213173 A1 AU 2002213173A1
Authority
AU
Australia
Prior art keywords
dielectric constant
semiconductor structure
high dielectric
constant material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002213173A
Inventor
Jay Curless
Ravindranath Droopad
Lyndee Hilt
Jamal Ramdani
Stefan Zollner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002213173A1 publication Critical patent/AU2002213173A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H10P14/60—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
AU2002213173A 2000-11-14 2001-10-15 Semiconductor structure having high dielectric constant material Abandoned AU2002213173A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71242500A 2000-11-14 2000-11-14
US09712425 2000-11-14
PCT/US2001/031990 WO2002041371A1 (en) 2000-11-14 2001-10-15 Semiconductor structure having high dielectric constant material

Publications (1)

Publication Number Publication Date
AU2002213173A1 true AU2002213173A1 (en) 2002-05-27

Family

ID=24862055

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002213173A Abandoned AU2002213173A1 (en) 2000-11-14 2001-10-15 Semiconductor structure having high dielectric constant material

Country Status (7)

Country Link
EP (1) EP1338029A1 (en)
JP (1) JP2004514288A (en)
KR (1) KR20030051820A (en)
CN (1) CN1475027A (en)
AU (1) AU2002213173A1 (en)
TW (1) TW507317B (en)
WO (1) WO2002041371A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003063227A2 (en) * 2002-01-22 2003-07-31 Massachusetts Institute Of Technology A method of fabrication for iii-v semiconductor surface passivation
US6791125B2 (en) 2002-09-30 2004-09-14 Freescale Semiconductor, Inc. Semiconductor device structures which utilize metal sulfides
TW200720499A (en) 2005-11-24 2007-06-01 Univ Nat Tsing Hua Manufacturing method of substrate used for forming MOSFET device and products thereof
US20100072531A1 (en) * 2008-09-22 2010-03-25 Imec Method for Forming a Memory Cell Comprising a Capacitor Having a Strontium Titaniumoxide Based Dielectric Layer and Devices Obtained Thereof
US9269580B2 (en) * 2011-06-27 2016-02-23 Cree, Inc. Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2643833B2 (en) * 1994-05-30 1997-08-20 日本電気株式会社 Semiconductor memory device and method of manufacturing the same
EP0810666B1 (en) * 1996-05-30 2004-08-25 Oki Electric Industry Co., Ltd. Non-volatile semiconductor memory cell and method for production thereof
JPH11330411A (en) * 1998-05-13 1999-11-30 Matsushita Electric Ind Co Ltd Semiconductor memory device and method of manufacturing the same
US6241821B1 (en) * 1999-03-22 2001-06-05 Motorola, Inc. Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

Also Published As

Publication number Publication date
TW507317B (en) 2002-10-21
JP2004514288A (en) 2004-05-13
EP1338029A1 (en) 2003-08-27
KR20030051820A (en) 2003-06-25
CN1475027A (en) 2004-02-11
WO2002041371A1 (en) 2002-05-23

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