AU2001276987A1 - Microelectronic piezoelectric structure - Google Patents
Microelectronic piezoelectric structureInfo
- Publication number
- AU2001276987A1 AU2001276987A1 AU2001276987A AU7698701A AU2001276987A1 AU 2001276987 A1 AU2001276987 A1 AU 2001276987A1 AU 2001276987 A AU2001276987 A AU 2001276987A AU 7698701 A AU7698701 A AU 7698701A AU 2001276987 A1 AU2001276987 A1 AU 2001276987A1
- Authority
- AU
- Australia
- Prior art keywords
- microelectronic
- piezoelectric structure
- piezoelectric
- microelectronic piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H10P14/69398—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- H10P14/6329—
-
- H10P14/6334—
-
- H10P14/6342—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
- H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H10P14/6349—
-
- H10P14/69215—
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/624,527 US6432546B1 (en) | 2000-07-24 | 2000-07-24 | Microelectronic piezoelectric structure and method of forming the same |
| US09624527 | 2000-07-24 | ||
| PCT/US2001/022676 WO2002009203A2 (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001276987A1 true AU2001276987A1 (en) | 2002-02-05 |
Family
ID=24502333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001276987A Abandoned AU2001276987A1 (en) | 2000-07-24 | 2001-07-19 | Microelectronic piezoelectric structure |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6432546B1 (en) |
| EP (1) | EP1307930A2 (en) |
| JP (1) | JP2004517462A (en) |
| KR (1) | KR100827216B1 (en) |
| CN (1) | CN1511350A (en) |
| AU (1) | AU2001276987A1 (en) |
| TW (1) | TW508849B (en) |
| WO (1) | WO2002009203A2 (en) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6693033B2 (en) * | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
| US6392257B1 (en) | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| JP2004503920A (en) | 2000-05-31 | 2004-02-05 | モトローラ・インコーポレイテッド | Semiconductor device and method of manufacturing the semiconductor device |
| US6482538B2 (en) * | 2000-07-24 | 2002-11-19 | Motorola, Inc. | Microelectronic piezoelectric structure and method of forming the same |
| AU2001277001A1 (en) | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
| US20020096683A1 (en) | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
| WO2002082551A1 (en) | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
| US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
| US20030034491A1 (en) | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
| US20030071327A1 (en) | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) * | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| JP4120589B2 (en) * | 2004-01-13 | 2008-07-16 | セイコーエプソン株式会社 | Magnetoresistive element and magnetic memory device |
| US20060288928A1 (en) * | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
| US7364989B2 (en) * | 2005-07-01 | 2008-04-29 | Sharp Laboratories Of America, Inc. | Strain control of epitaxial oxide films using virtual substrates |
| US20070029592A1 (en) * | 2005-08-04 | 2007-02-08 | Ramamoorthy Ramesh | Oriented bismuth ferrite films grown on silicon and devices formed thereby |
| US7696549B2 (en) * | 2005-08-04 | 2010-04-13 | University Of Maryland | Bismuth ferrite films and devices grown on silicon |
| US7541105B2 (en) | 2006-09-25 | 2009-06-02 | Seagate Technology Llc | Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers |
| US20090015142A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display devices |
| US8179034B2 (en) * | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
| US20100110551A1 (en) * | 2008-10-31 | 2010-05-06 | 3M Innovative Properties Company | Light extraction film with high index backfill layer and passivation layer |
| US7957621B2 (en) * | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6450575A (en) * | 1987-08-21 | 1989-02-27 | Nec Corp | Substrate for electronic device |
| JPH0695554B2 (en) | 1987-10-12 | 1994-11-24 | 工業技術院長 | Method for forming single crystal magnesia spinel film |
| US4999842A (en) | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
| US5310707A (en) | 1990-03-28 | 1994-05-10 | Superconductivity Research Laboratory International | Substrate material for the preparation of oxide superconductors |
| US5270298A (en) | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
| US5155658A (en) | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
| US5326721A (en) | 1992-05-01 | 1994-07-05 | Texas Instruments Incorporated | Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
| JPH06151872A (en) | 1992-11-09 | 1994-05-31 | Mitsubishi Kasei Corp | Fet device |
| EP0600303B1 (en) | 1992-12-01 | 2002-02-06 | Matsushita Electric Industrial Co., Ltd. | Method for fabrication of dielectric thin film |
| US5248564A (en) | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
| US5828080A (en) | 1994-08-17 | 1998-10-27 | Tdk Corporation | Oxide thin film, electronic device substrate and electronic device |
| US5635741A (en) | 1994-09-30 | 1997-06-03 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films by erbium donor doping |
| US5635453A (en) * | 1994-12-23 | 1997-06-03 | Neocera, Inc. | Superconducting thin film system using a garnet substrate |
| WO1997001854A1 (en) * | 1995-06-28 | 1997-01-16 | Bell Communication Research, Inc. | Barrier layer for ferroelectric capacitor integrated on silicon |
| US5753934A (en) | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
| FR2744578B1 (en) | 1996-02-06 | 1998-04-30 | Motorola Semiconducteurs | HIGH FREQUENCY AMPLIFIER |
| US6002375A (en) | 1997-09-02 | 1999-12-14 | Motorola, Inc. | Multi-substrate radio-frequency circuit |
| US6055179A (en) | 1998-05-19 | 2000-04-25 | Canon Kk | Memory device utilizing giant magnetoresistance effect |
-
2000
- 2000-07-24 US US09/624,527 patent/US6432546B1/en not_active Expired - Fee Related
-
2001
- 2001-07-19 CN CNA018132804A patent/CN1511350A/en active Pending
- 2001-07-19 AU AU2001276987A patent/AU2001276987A1/en not_active Abandoned
- 2001-07-19 EP EP01954763A patent/EP1307930A2/en not_active Withdrawn
- 2001-07-19 JP JP2002514808A patent/JP2004517462A/en active Pending
- 2001-07-19 KR KR1020037001102A patent/KR100827216B1/en not_active Expired - Fee Related
- 2001-07-19 WO PCT/US2001/022676 patent/WO2002009203A2/en not_active Ceased
- 2001-07-23 TW TW090117907A patent/TW508849B/en not_active IP Right Cessation
-
2002
- 2002-04-19 US US10/126,772 patent/US6750067B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6432546B1 (en) | 2002-08-13 |
| CN1511350A (en) | 2004-07-07 |
| US20020164827A1 (en) | 2002-11-07 |
| KR20030029114A (en) | 2003-04-11 |
| TW508849B (en) | 2002-11-01 |
| WO2002009203A2 (en) | 2002-01-31 |
| WO2002009203A3 (en) | 2002-05-23 |
| EP1307930A2 (en) | 2003-05-07 |
| US6750067B2 (en) | 2004-06-15 |
| KR100827216B1 (en) | 2008-05-07 |
| JP2004517462A (en) | 2004-06-10 |
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