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AU2001274784A1 - Pulsed highly ionized magnetron sputtering - Google Patents

Pulsed highly ionized magnetron sputtering

Info

Publication number
AU2001274784A1
AU2001274784A1 AU2001274784A AU7478401A AU2001274784A1 AU 2001274784 A1 AU2001274784 A1 AU 2001274784A1 AU 2001274784 A AU2001274784 A AU 2001274784A AU 7478401 A AU7478401 A AU 7478401A AU 2001274784 A1 AU2001274784 A1 AU 2001274784A1
Authority
AU
Australia
Prior art keywords
pulsed
magnetron sputtering
highly ionized
ionized magnetron
highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001274784A
Inventor
Vladimir Kouznetsov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chemfilt R and D AB
Original Assignee
Chemfilt R and D AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemfilt R and D AB filed Critical Chemfilt R and D AB
Publication of AU2001274784A1 publication Critical patent/AU2001274784A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU2001274784A 2000-06-19 2001-06-19 Pulsed highly ionized magnetron sputtering Abandoned AU2001274784A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0002305 2000-06-19
SE0002305A SE519931C2 (en) 2000-06-19 2000-06-19 Device and method for pulsed, highly ionized magnetron sputtering
PCT/SE2001/001416 WO2001098553A1 (en) 2000-06-19 2001-06-19 Pulsed highly ionized magnetron sputtering

Publications (1)

Publication Number Publication Date
AU2001274784A1 true AU2001274784A1 (en) 2002-01-02

Family

ID=20280162

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001274784A Abandoned AU2001274784A1 (en) 2000-06-19 2001-06-19 Pulsed highly ionized magnetron sputtering

Country Status (6)

Country Link
US (1) US20040020760A1 (en)
EP (1) EP1292717A1 (en)
JP (1) JP2004501279A (en)
AU (1) AU2001274784A1 (en)
SE (1) SE519931C2 (en)
WO (1) WO2001098553A1 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004017356A2 (en) * 2002-08-16 2004-02-26 The Regents Of The University Of California Process and apparatus for pulsed dc magnetron reactive sputtering of thin film coatings on large substrates using smaller sputter cathodes
US7147759B2 (en) 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896775B2 (en) 2002-10-29 2005-05-24 Zond, Inc. High-power pulsed magnetically enhanced plasma processing
US6853142B2 (en) 2002-11-04 2005-02-08 Zond, Inc. Methods and apparatus for generating high-density plasma
US6896773B2 (en) 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US6805779B2 (en) 2003-03-21 2004-10-19 Zond, Inc. Plasma generation using multi-step ionization
US6806651B1 (en) 2003-04-22 2004-10-19 Zond, Inc. High-density plasma source
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
SE0302045D0 (en) * 2003-07-10 2003-07-10 Chemfilt R & D Ab Work piece processing by pulsed electric discharges in solid-gas plasmas
SE0303136D0 (en) * 2003-11-24 2003-11-24 Chemfilt R & D Ab Method and apparatus for reactive soil-gas-plasma deposition
US7663319B2 (en) 2004-02-22 2010-02-16 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US20060066248A1 (en) * 2004-09-24 2006-03-30 Zond, Inc. Apparatus for generating high current electrical discharges
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
WO2005089272A2 (en) * 2004-03-15 2005-09-29 Terje Asbjorn Skotheim Pulsed cathodic arc plasma source
US7750575B2 (en) 2004-04-07 2010-07-06 Zond, Inc. High density plasma source
EP1609882A1 (en) * 2004-06-24 2005-12-28 METAPLAS IONON Oberflächenveredelungstechnik GmbH Coating device and method by cathodic sputtering
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
DE102006017382A1 (en) * 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Method and device for coating and / or treating surfaces
US9355824B2 (en) 2006-12-12 2016-05-31 Evatec Ag Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS)
SE532505C2 (en) * 2007-12-12 2010-02-09 Plasmatrix Materials Ab Method for plasma activated chemical vapor deposition and plasma decomposition unit
KR101850667B1 (en) * 2009-09-25 2018-05-31 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 Method For Producing Cubic Zirconia Layers
SE535381C2 (en) * 2010-02-24 2012-07-17 Plasmadvance Ab Plasma sputtering process to produce particles
JP5619666B2 (en) * 2010-04-16 2014-11-05 ジェイディーエス ユニフェイズ コーポレーションＪＤＳ Ｕｎｉｐｈａｓｅ Ｃｏｒｐｏｒａｔｉｏｎ Ring cathode for use in magnetron sputtering devices
WO2014142737A1 (en) * 2013-03-13 2014-09-18 Ulf Helmersson Arrangement and method for high power pulsed magnetron sputtering
EP3340274A1 (en) * 2016-12-24 2018-06-27 WINDLIPIE spólka z ograniczona odpowiedzialnoscia spólka komandytowa Magnetron sputtering device
US11807098B2 (en) 2019-12-02 2023-11-07 Kuster North America, Inc. Rotary selector knob with graphical display
CN111534806A (en) * 2020-06-30 2020-08-14 北京大学深圳研究生院 Hard coating and preparation method and application thereof
CN112877662B (en) * 2021-01-13 2022-07-12 Tcl华星光电技术有限公司 Magnetron sputtering equipment
CN113202707B (en) * 2021-05-12 2022-08-02 兰州空间技术物理研究所 Diameter-variable ion thruster magnetic pole
US12195843B2 (en) * 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700633C2 (en) * 1987-01-12 1997-02-20 Reinar Dr Gruen Method and device for the gentle coating of electrically conductive objects by means of plasma
US4925542A (en) * 1988-12-08 1990-05-15 Trw Inc. Plasma plating apparatus and method
ATE101661T1 (en) * 1989-06-27 1994-03-15 Hauzer Holding METHOD AND DEVICE FOR COATING SUBSTRATES.
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
DE19609970A1 (en) * 1996-03-14 1997-09-18 Leybold Systems Gmbh Device for applying thin layers on a substrate
KR100277321B1 (en) * 1997-02-19 2001-01-15 미다라이 후지오 Reactive sputtering apparatus and process for forming thin film using same
SE9704607D0 (en) * 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
JP4355036B2 (en) * 1997-03-18 2009-10-28 キヤノンアネルバ株式会社 Ionization sputtering equipment
EP0978138A1 (en) * 1997-04-21 2000-02-09 Tokyo Electron Arizona, Inc. Method and apparatus for ionized sputtering of materials
US6117279A (en) * 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition

Also Published As

Publication number Publication date
US20040020760A1 (en) 2004-02-05
JP2004501279A (en) 2004-01-15
SE0002305D0 (en) 2000-06-19
EP1292717A1 (en) 2003-03-19
WO2001098553A1 (en) 2001-12-27
SE519931C2 (en) 2003-04-29
SE0002305L (en) 2002-02-15

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