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AU2001293186A1 - Cascade circuit - Google Patents

Cascade circuit

Info

Publication number
AU2001293186A1
AU2001293186A1 AU2001293186A AU9318601A AU2001293186A1 AU 2001293186 A1 AU2001293186 A1 AU 2001293186A1 AU 2001293186 A AU2001293186 A AU 2001293186A AU 9318601 A AU9318601 A AU 9318601A AU 2001293186 A1 AU2001293186 A1 AU 2001293186A1
Authority
AU
Australia
Prior art keywords
cascade circuit
cascade
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001293186A
Inventor
Ho-Yuan Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lovoltech Inc
Original Assignee
Lovoltech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lovoltech Inc filed Critical Lovoltech Inc
Publication of AU2001293186A1 publication Critical patent/AU2001293186A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
AU2001293186A 2000-09-29 2001-09-28 Cascade circuit Abandoned AU2001293186A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/676,370 US6750698B1 (en) 2000-09-29 2000-09-29 Cascade circuits utilizing normally-off junction field effect transistors for low on-resistance and low voltage applications
US09/676,370 2000-09-29
PCT/US2001/030497 WO2002027796A2 (en) 2000-09-29 2001-09-28 Cascade circuit

Publications (1)

Publication Number Publication Date
AU2001293186A1 true AU2001293186A1 (en) 2002-04-08

Family

ID=24714229

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001293186A Abandoned AU2001293186A1 (en) 2000-09-29 2001-09-28 Cascade circuit

Country Status (3)

Country Link
US (1) US6750698B1 (en)
AU (1) AU2001293186A1 (en)
WO (1) WO2002027796A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006045312B3 (en) * 2006-09-26 2008-05-21 Siced Electronics Development Gmbh & Co. Kg Semiconductor device with coupled junction field effect transistors
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918870B2 (en) * 1977-05-15 1984-05-01 財団法人半導体研究振興会 semiconductor integrated circuit
US4712022A (en) * 1985-06-28 1987-12-08 Honeywell Inc. Multiple input OR-AND circuit for FET logic
JPS63194368A (en) * 1987-02-09 1988-08-11 Toshiba Corp Field-effect type transistor and manufacture thereof
US4877976A (en) * 1987-03-13 1989-10-31 Gould Inc. Cascade FET logic circuits
JP2680006B2 (en) * 1987-12-01 1997-11-19 財団法人 半導体研究振興会 Semiconductor device and manufacturing method thereof
JP2658130B2 (en) * 1988-03-01 1997-09-30 ソニー株式会社 Compound semiconductor integrated circuit device
US4937474A (en) * 1989-02-23 1990-06-26 Northern Telecom Limited Low power, high noise margin logic gates employing enhancement mode switching FETs
WO1994002993A1 (en) * 1992-07-17 1994-02-03 Massachusetts Institute Of Technology Recovered energy logic circuits
JP2897095B2 (en) * 1993-02-02 1999-05-31 富士通株式会社 Method for manufacturing capacitor
JPH06268236A (en) * 1993-03-15 1994-09-22 Tokin Corp Composite static induction type transistor
US6251716B1 (en) * 1999-01-06 2001-06-26 Lovoltech, Inc. JFET structure and manufacture method for low on-resistance and low voltage application

Also Published As

Publication number Publication date
WO2002027796A3 (en) 2002-08-01
US6750698B1 (en) 2004-06-15
WO2002027796A2 (en) 2002-04-04

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