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AU2002227288A1 - Conical sputtering target - Google Patents

Conical sputtering target

Info

Publication number
AU2002227288A1
AU2002227288A1 AU2002227288A AU2728802A AU2002227288A1 AU 2002227288 A1 AU2002227288 A1 AU 2002227288A1 AU 2002227288 A AU2002227288 A AU 2002227288A AU 2728802 A AU2728802 A AU 2728802A AU 2002227288 A1 AU2002227288 A1 AU 2002227288A1
Authority
AU
Australia
Prior art keywords
sputtering target
conical sputtering
conical
target
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002227288A
Inventor
David A. Glocker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2002227288A1 publication Critical patent/AU2002227288A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2002227288A 2000-11-17 2001-11-13 Conical sputtering target Abandoned AU2002227288A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/716,078 2000-11-17
US09/716,078 US6432286B1 (en) 1998-06-10 2000-11-17 Conical sputtering target
PCT/US2001/047089 WO2002040736A1 (en) 2000-11-17 2001-11-13 Conical sputtering target

Publications (1)

Publication Number Publication Date
AU2002227288A1 true AU2002227288A1 (en) 2002-05-27

Family

ID=24876636

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002227288A Abandoned AU2002227288A1 (en) 2000-11-17 2001-11-13 Conical sputtering target

Country Status (3)

Country Link
US (1) US6432286B1 (en)
AU (1) AU2002227288A1 (en)
WO (1) WO2002040736A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000098582A (en) * 1998-09-17 2000-04-07 Ulvac Seimaku Kk PHASE SHIFT PHOTO MASK BLANK, PHASE SHIFT PHOTO MASK, METHOD FOR MANUFACTURING THEM, AND APPARATUS FOR PRODUCING THE BLANK
JP4541014B2 (en) * 2004-01-13 2010-09-08 キヤノンアネルバ株式会社 Plasma assisted sputter deposition system
FR2880633B1 (en) * 2005-01-13 2007-04-13 Anelva Corp PLASMA-BASED CATHODIC SPRAY DEPOSITION SYSTEM
US20060213762A1 (en) * 2005-02-28 2006-09-28 Nanoset Llc Cylindrical sputtering apparatus
US10672596B2 (en) * 2016-03-28 2020-06-02 Tokyo Electron Limited Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030996A (en) 1971-09-07 1977-06-21 Telic Corporation Electrode type glow discharge method and apparatus
US3884793A (en) 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
US4031424A (en) 1971-09-07 1977-06-21 Telic Corporation Electrode type glow discharge apparatus
US4041353A (en) 1971-09-07 1977-08-09 Telic Corporation Glow discharge method and apparatus
US3995187A (en) 1971-09-07 1976-11-30 Telic Corporation Electrode type glow discharge apparatus
US3919678A (en) 1974-04-01 1975-11-11 Telic Corp Magnetic field generation apparatus
US4132612A (en) 1974-12-23 1979-01-02 Telic Corporation Glow discharge method and apparatus
ATE47504T1 (en) * 1983-12-05 1989-11-15 Leybold Ag MAGNETRON CATODE FOR ATOMY FERROMAGNETIC TARGETS.
US4486287A (en) 1984-02-06 1984-12-04 Fournier Paul R Cross-field diode sputtering target assembly
CH659484A5 (en) * 1984-04-19 1987-01-30 Balzers Hochvakuum ARRANGEMENT FOR COATING SUBSTRATES BY CATHODE SPRAYING.
US4606806A (en) 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
US4595482A (en) 1984-05-17 1986-06-17 Varian Associates, Inc. Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges
JPS61183467A (en) * 1985-02-08 1986-08-16 Hitachi Ltd Sputtering electrode
US4810347A (en) * 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
DE3920835C2 (en) * 1989-06-24 1997-12-18 Leybold Ag Device for coating substrates
US5135634A (en) * 1991-02-14 1992-08-04 Sputtered Films, Inc. Apparatus for depositing a thin layer of sputtered atoms on a member
US5525199A (en) 1991-11-13 1996-06-11 Optical Corporation Of America Low pressure reactive magnetron sputtering apparatus and method
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
US5597459A (en) 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
US6066242A (en) * 1998-06-10 2000-05-23 David A. Glocker Conical sputtering target
US6235170B1 (en) * 1998-06-10 2001-05-22 David A. Glocker Conical sputtering target

Also Published As

Publication number Publication date
US6432286B1 (en) 2002-08-13
WO2002040736B1 (en) 2002-09-12
WO2002040736A1 (en) 2002-05-23

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