AU2001273553A1 - Non-volatile memory element on a monocrystalline semiconductor substrate - Google Patents
Non-volatile memory element on a monocrystalline semiconductor substrateInfo
- Publication number
- AU2001273553A1 AU2001273553A1 AU2001273553A AU7355301A AU2001273553A1 AU 2001273553 A1 AU2001273553 A1 AU 2001273553A1 AU 2001273553 A AU2001273553 A AU 2001273553A AU 7355301 A AU7355301 A AU 7355301A AU 2001273553 A1 AU2001273553 A1 AU 2001273553A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor substrate
- volatile memory
- memory element
- monocrystalline semiconductor
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10P14/69398—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
- H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
-
- H10P14/6329—
-
- H10P14/6332—
-
- H10P14/6339—
-
- H10P14/69215—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62475400A | 2000-07-24 | 2000-07-24 | |
| US09624754 | 2000-07-24 | ||
| PCT/US2001/022569 WO2002009191A2 (fr) | 2000-07-24 | 2001-07-18 | Element de memoire non volatile sur un substrat semi-conducteur monocristallin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001273553A1 true AU2001273553A1 (en) | 2002-02-05 |
Family
ID=24503188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001273553A Abandoned AU2001273553A1 (en) | 2000-07-24 | 2001-07-18 | Non-volatile memory element on a monocrystalline semiconductor substrate |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001273553A1 (fr) |
| TW (1) | TW503580B (fr) |
| WO (1) | WO2002009191A2 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019066959A1 (fr) * | 2017-09-29 | 2019-04-04 | Intel Corporation | Neurones et synapses ferroélectriques |
| DE102020127831A1 (de) | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speicherarray-gatestrukturen |
| US11695073B2 (en) | 2020-05-29 | 2023-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array gate structures |
| DE102021101243A1 (de) | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speicherblock-kanalregionen |
| US11710790B2 (en) | 2020-05-29 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array channel regions |
| US11640974B2 (en) | 2020-06-30 | 2023-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array isolation structures |
| US11729987B2 (en) | 2020-06-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array source/drain electrode structures |
| US11647634B2 (en) | 2020-07-16 | 2023-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| US11355516B2 (en) | 2020-07-16 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| CN117016050A (zh) * | 2021-08-27 | 2023-11-07 | 华为技术有限公司 | 铁电存储器及其形成方法、电子设备 |
| US20230200081A1 (en) * | 2021-12-21 | 2023-06-22 | Intel Corporation | Transistor devices with perovskite films |
| CN116056551A (zh) * | 2023-03-31 | 2023-05-02 | 北京航空航天大学 | 一种反铁磁隧道结及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151872A (ja) * | 1992-11-09 | 1994-05-31 | Mitsubishi Kasei Corp | Ｆｅｔ素子 |
| US5248564A (en) * | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
| KR100243294B1 (ko) * | 1997-06-09 | 2000-02-01 | 윤종용 | 반도체장치의 강유전체 메모리 셀 및 어레이 |
-
2001
- 2001-07-18 AU AU2001273553A patent/AU2001273553A1/en not_active Abandoned
- 2001-07-18 WO PCT/US2001/022569 patent/WO2002009191A2/fr not_active Ceased
- 2001-07-23 TW TW090117891A patent/TW503580B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW503580B (en) | 2002-09-21 |
| WO2002009191A3 (fr) | 2002-05-23 |
| WO2002009191A2 (fr) | 2002-01-31 |
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