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AU2001270086A1 - Soft recovery power diode and related method - Google Patents

Soft recovery power diode and related method

Info

Publication number
AU2001270086A1
AU2001270086A1 AU2001270086A AU7008601A AU2001270086A1 AU 2001270086 A1 AU2001270086 A1 AU 2001270086A1 AU 2001270086 A AU2001270086 A AU 2001270086A AU 7008601 A AU7008601 A AU 7008601A AU 2001270086 A1 AU2001270086 A1 AU 2001270086A1
Authority
AU
Australia
Prior art keywords
related method
power diode
recovery power
soft recovery
soft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001270086A
Inventor
Praveen Muraleedharan Shenoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of AU2001270086A1 publication Critical patent/AU2001270086A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer
AU2001270086A 2000-06-26 2001-06-22 Soft recovery power diode and related method Abandoned AU2001270086A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/603,605 US6737731B1 (en) 2000-06-26 2000-06-26 Soft recovery power diode
US09603605 2000-06-26
PCT/US2001/019990 WO2002001643A2 (en) 2000-06-26 2001-06-22 Soft recovery power diode and related method

Publications (1)

Publication Number Publication Date
AU2001270086A1 true AU2001270086A1 (en) 2002-01-08

Family

ID=24416158

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001270086A Abandoned AU2001270086A1 (en) 2000-06-26 2001-06-22 Soft recovery power diode and related method

Country Status (7)

Country Link
US (1) US6737731B1 (en)
JP (1) JP4608181B2 (en)
CN (1) CN1211865C (en)
AU (1) AU2001270086A1 (en)
DE (1) DE10196362B4 (en)
TW (1) TW507384B (en)
WO (1) WO2002001643A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169634B2 (en) * 2003-01-15 2007-01-30 Advanced Power Technology, Inc. Design and fabrication of rugged FRED
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
DE102004048607A1 (en) 2004-10-06 2006-04-13 Robert Bosch Gmbh Semiconductor device
JP4843253B2 (en) * 2005-05-23 2011-12-21 株式会社東芝 Power semiconductor device
US7728409B2 (en) * 2005-11-10 2010-06-01 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing the same
JP2009049045A (en) * 2007-08-13 2009-03-05 Kansai Electric Power Co Inc:The Soft recovery diode
JP5309360B2 (en) * 2008-07-31 2013-10-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US8933506B2 (en) * 2011-01-31 2015-01-13 Alpha And Omega Semiconductor Incorporated Diode structures with controlled injection efficiency for fast switching
CN102832121B (en) * 2011-06-17 2015-04-01 中国科学院微电子研究所 Fast recovery diode manufacturing method
CN103311278B (en) * 2012-03-11 2016-03-02 深圳市依思普林科技有限公司 Fast recovery diode and make the method for this diode
CN103311314B (en) * 2012-03-11 2016-08-03 深圳市立德电控科技有限公司 Fast recovery diode and the method making this diode
CN102820323B (en) * 2012-09-07 2014-11-05 温州大学 Nanometer silicon carbide/crystal silicon carbide double graded junction fast recovery diode and preparation method thereof
KR102650091B1 (en) * 2015-09-01 2024-03-20 가부시끼가이샤 레조낙 airgel
JP6846119B2 (en) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス Diode and power converter using it
CN107623045A (en) * 2017-09-30 2018-01-23 绍兴上虞欧菲光电科技有限公司 A kind of diode
CN108598153B (en) * 2018-06-29 2023-12-29 南京晟芯半导体有限公司 Soft recovery power semiconductor diode and preparation method thereof
CN111653611A (en) * 2020-07-20 2020-09-11 电子科技大学 A method for improving reverse recovery characteristics of semiconductor devices

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (en) * 1966-12-19 1968-11-22 Lucas Industries Ltd Semiconductor diode
FR2395605A1 (en) 1977-06-21 1979-01-19 Thomson Csf EFFICIENCY-IMPROVED AVALANCHE DIODE AND DIODE STRUCTURE USING SUCH A STRUCTURE
JPS5929469A (en) 1982-08-11 1984-02-16 Hitachi Ltd Semiconductor device
JPS59189679A (en) 1983-04-13 1984-10-27 Hitachi Ltd Diode
JPS6453582A (en) * 1987-08-25 1989-03-01 Toko Inc Variable capacitance diode device
FR2638892B1 (en) 1988-11-09 1992-12-24 Sgs Thomson Microelectronics METHOD FOR MODULATING THE QUANTITY OF GOLD DIFFUSED IN A SILICON SUBSTRATE AND RAPID DIODE OBTAINED BY THIS PROCESS
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
DE4201183A1 (en) 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg PERFORMANCE DIODE
JP2509127B2 (en) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 Electrostatic induction device
US5608244A (en) 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JPH06314801A (en) 1993-03-05 1994-11-08 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP2854212B2 (en) * 1993-03-12 1999-02-03 ローム株式会社 Surge absorbing diode
JP3994443B2 (en) 1995-05-18 2007-10-17 三菱電機株式会社 Diode and manufacturing method thereof
DE19713962C1 (en) 1997-04-04 1998-07-02 Siemens Ag Power diode with charge coupling zones for freewheeling diode or voltage boundary controller
JP3968912B2 (en) * 1999-05-10 2007-08-29 富士電機デバイステクノロジー株式会社 diode

Also Published As

Publication number Publication date
JP4608181B2 (en) 2011-01-05
JP2004502305A (en) 2004-01-22
US6737731B1 (en) 2004-05-18
WO2002001643A3 (en) 2002-04-18
DE10196362B4 (en) 2007-04-05
TW507384B (en) 2002-10-21
DE10196362T1 (en) 2003-05-22
CN1211865C (en) 2005-07-20
WO2002001643A2 (en) 2002-01-03
CN1441968A (en) 2003-09-10

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