AU2001292643A1 - Power amplifier circuitry and method - Google Patents
Power amplifier circuitry and methodInfo
- Publication number
- AU2001292643A1 AU2001292643A1 AU2001292643A AU9264301A AU2001292643A1 AU 2001292643 A1 AU2001292643 A1 AU 2001292643A1 AU 2001292643 A AU2001292643 A AU 2001292643A AU 9264301 A AU9264301 A AU 9264301A AU 2001292643 A1 AU2001292643 A1 AU 2001292643A1
- Authority
- AU
- Australia
- Prior art keywords
- power amplifier
- amplifier circuitry
- circuitry
- power
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H10W44/20—
-
- H10W44/501—
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H10W44/226—
-
- H10W70/63—
-
- H10W72/07251—
-
- H10W72/20—
-
- H10W90/724—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/660,123 | 2000-09-12 | ||
| US09/660,123 US6549071B1 (en) | 2000-09-12 | 2000-09-12 | Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices |
| PCT/US2001/028589 WO2002023716A2 (en) | 2000-09-12 | 2001-09-11 | Power amplifier circuitry and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001292643A1 true AU2001292643A1 (en) | 2002-03-26 |
Family
ID=24648237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001292643A Abandoned AU2001292643A1 (en) | 2000-09-12 | 2001-09-11 | Power amplifier circuitry and method |
Country Status (6)
| Country | Link |
|---|---|
| US (12) | US6549071B1 (en) |
| EP (1) | EP1329021A2 (en) |
| JP (1) | JP5230054B2 (en) |
| KR (1) | KR100887427B1 (en) |
| AU (1) | AU2001292643A1 (en) |
| WO (1) | WO2002023716A2 (en) |
Families Citing this family (129)
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| US6972965B2 (en) * | 2003-02-04 | 2005-12-06 | Intel Corporation | Method for integrated high Q inductors in FCGBA packages |
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| US7489914B2 (en) * | 2003-03-28 | 2009-02-10 | Georgia Tech Research Corporation | Multi-band RF transceiver with passive reuse in organic substrates |
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| US6882220B2 (en) * | 2003-06-27 | 2005-04-19 | Sige Semiconductor Inc. | Integrated power amplifier circuit |
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2003
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-
2004
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- 2004-03-30 US US10/813,589 patent/US8149064B2/en not_active Expired - Fee Related
- 2004-03-30 US US10/812,853 patent/US20050052235A1/en not_active Abandoned
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2007
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| US6816011B2 (en) | 2004-11-09 |
| US20040075499A1 (en) | 2004-04-22 |
| US7224232B2 (en) | 2007-05-29 |
| US6788141B2 (en) | 2004-09-07 |
| US20050052235A1 (en) | 2005-03-10 |
| US20080284512A1 (en) | 2008-11-20 |
| US6727754B2 (en) | 2004-04-27 |
| WO2002023716A3 (en) | 2003-02-13 |
| EP1329021A2 (en) | 2003-07-23 |
| US7935990B2 (en) | 2011-05-03 |
| KR100887427B1 (en) | 2009-03-09 |
| KR20030063338A (en) | 2003-07-28 |
| US20070096816A1 (en) | 2007-05-03 |
| US20020044018A1 (en) | 2002-04-18 |
| US8274330B2 (en) | 2012-09-25 |
| US20030179045A1 (en) | 2003-09-25 |
| US20050052236A1 (en) | 2005-03-10 |
| JP5230054B2 (en) | 2013-07-10 |
| US20050151591A1 (en) | 2005-07-14 |
| US8149064B2 (en) | 2012-04-03 |
| US20030206058A1 (en) | 2003-11-06 |
| US6549071B1 (en) | 2003-04-15 |
| US6927630B2 (en) | 2005-08-09 |
| JP2004526339A (en) | 2004-08-26 |
| US20050052167A1 (en) | 2005-03-10 |
| US20050052237A1 (en) | 2005-03-10 |
| WO2002023716A2 (en) | 2002-03-21 |
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