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AU2001255691A1 - Reduction of data dependent power supply noise when sensing the state of a memory cell - Google Patents

Reduction of data dependent power supply noise when sensing the state of a memory cell

Info

Publication number
AU2001255691A1
AU2001255691A1 AU2001255691A AU5569101A AU2001255691A1 AU 2001255691 A1 AU2001255691 A1 AU 2001255691A1 AU 2001255691 A AU2001255691 A AU 2001255691A AU 5569101 A AU5569101 A AU 5569101A AU 2001255691 A1 AU2001255691 A1 AU 2001255691A1
Authority
AU
Australia
Prior art keywords
sensing
reduction
power supply
state
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001255691A
Inventor
Trevor Blyth
David Sowards
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of AU2001255691A1 publication Critical patent/AU2001255691A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
AU2001255691A 2000-05-01 2001-04-26 Reduction of data dependent power supply noise when sensing the state of a memory cell Abandoned AU2001255691A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09561710 2000-05-01
US09/561,710 US6219291B1 (en) 2000-05-01 2000-05-01 Reduction of data dependent power supply noise when sensing the state of a memory cell
PCT/US2001/013408 WO2001084554A1 (en) 2000-05-01 2001-04-26 Reduction of data dependent power supply noise when sensing the state of a memory cell

Publications (1)

Publication Number Publication Date
AU2001255691A1 true AU2001255691A1 (en) 2001-11-12

Family

ID=24243096

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001255691A Abandoned AU2001255691A1 (en) 2000-05-01 2001-04-26 Reduction of data dependent power supply noise when sensing the state of a memory cell

Country Status (6)

Country Link
US (2) US6219291B1 (en)
EP (1) EP1287530A1 (en)
JP (1) JP4960564B2 (en)
KR (1) KR20030013397A (en)
AU (1) AU2001255691A1 (en)
WO (1) WO2001084554A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000165375A (en) * 1998-11-30 2000-06-16 Hitachi Ltd Information processing device, IC card
DE10147140A1 (en) * 2001-09-25 2003-04-17 Giesecke & Devrient Gmbh Chip card with display
US7155357B2 (en) 2003-01-09 2006-12-26 Silicon Storage Technology, Inc. Method and apparatus for detecting an unused state in a semiconductor circuit
US20040139307A1 (en) * 2003-01-09 2004-07-15 Barnett Philip C. Method and apparatus for initializing a semiconductor circuit from an external interface
US6970386B2 (en) * 2003-03-03 2005-11-29 Emosyn America, Inc. Method and apparatus for detecting exposure of a semiconductor circuit to ultra-violet light
CN100533584C (en) * 2004-12-21 2009-08-26 新唐科技股份有限公司 serial read-only memory device and memory system
KR100735011B1 (en) * 2006-01-23 2007-07-03 삼성전자주식회사 NOR flash memory and its reading method
US8773934B2 (en) 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
US7916544B2 (en) * 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US8254195B2 (en) * 2010-06-01 2012-08-28 Qualcomm Incorporated High-speed sensing for resistive memories
US8437169B2 (en) * 2010-12-20 2013-05-07 Texas Instruments Incorporated Fast response circuits and methods for FRAM power loss protection
US9224433B1 (en) 2014-04-09 2015-12-29 Altera Corporation Method and apparatus for power supply aware memory access operations in an integrated circuit
US9589604B1 (en) * 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
US9799408B2 (en) 2016-02-23 2017-10-24 Texas Instruments Incorporated Memory circuit with leakage compensation
KR102713411B1 (en) 2017-01-18 2024-10-08 삼성전자주식회사 Nonvolatile memory device and memory system including thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2617976B1 (en) 1987-07-10 1989-11-10 Thomson Semiconducteurs BINARY LOGIC LEVEL ELECTRIC DETECTOR
KR930000963B1 (en) * 1988-03-09 1993-02-11 가부시기가이샤 도오시바 Nonvolatile Memory Circuitry
FR2638869B1 (en) 1988-11-10 1990-12-21 Sgs Thomson Microelectronics SECURITY DEVICE AGAINST UNAUTHORIZED DETECTION OF PROTECTED DATA
JPH0752592B2 (en) * 1989-08-18 1995-06-05 株式会社東芝 Semiconductor memory device
JPH04362597A (en) * 1991-06-10 1992-12-15 Nec Ic Microcomput Syst Ltd Current sense amplifier circuit
KR100230747B1 (en) * 1996-11-22 1999-11-15 김영환 Low power sense amplifier in a semiconductor device
US5917754A (en) * 1997-05-21 1999-06-29 Atmel Corporation Semiconductor memory having a current balancing circuit
JP3972414B2 (en) 1997-06-20 2007-09-05 ソニー株式会社 Data judgment circuit and data judgment method

Also Published As

Publication number Publication date
JP2003532967A (en) 2003-11-05
US6466488B2 (en) 2002-10-15
KR20030013397A (en) 2003-02-14
US20010038563A1 (en) 2001-11-08
US6219291B1 (en) 2001-04-17
JP4960564B2 (en) 2012-06-27
WO2001084554A1 (en) 2001-11-08
EP1287530A1 (en) 2003-03-05

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