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AU2000255752A1 - Photoresist remover composition comprising ammonium fluoride - Google Patents

Photoresist remover composition comprising ammonium fluoride

Info

Publication number
AU2000255752A1
AU2000255752A1 AU2000255752A AU5575200A AU2000255752A1 AU 2000255752 A1 AU2000255752 A1 AU 2000255752A1 AU 2000255752 A AU2000255752 A AU 2000255752A AU 5575200 A AU5575200 A AU 5575200A AU 2000255752 A1 AU2000255752 A1 AU 2000255752A1
Authority
AU
Australia
Prior art keywords
ammonium fluoride
remover composition
photoresist remover
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000255752A
Inventor
Sang-Dai Lee
Chang-Il Oh
Young-Woong Park
Chong-Soon Yoo
Suk-Il Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of AU2000255752A1 publication Critical patent/AU2000255752A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H10P50/287—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
AU2000255752A 2000-06-19 2000-06-26 Photoresist remover composition comprising ammonium fluoride Abandoned AU2000255752A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020000033705A KR20010113396A (en) 2000-06-19 2000-06-19 Photoresist remover composition comprising ammonium fluoride
KR0033705 2000-06-19
PCT/KR2000/000663 WO2001098837A1 (en) 2000-06-19 2000-06-26 Photoresist remover composition comprising ammonium fluoride

Publications (1)

Publication Number Publication Date
AU2000255752A1 true AU2000255752A1 (en) 2002-01-02

Family

ID=19672600

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000255752A Abandoned AU2000255752A1 (en) 2000-06-19 2000-06-26 Photoresist remover composition comprising ammonium fluoride

Country Status (6)

Country Link
JP (1) JP3742624B2 (en)
KR (1) KR20010113396A (en)
CN (1) CN1217236C (en)
AU (1) AU2000255752A1 (en)
TW (1) TW594443B (en)
WO (1) WO2001098837A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4698123B2 (en) * 2001-05-21 2011-06-08 ドウジン セミケム カンパニー リミテッド Resist remover composition
KR100646793B1 (en) * 2001-11-13 2006-11-17 삼성전자주식회사 Thinner Composition
JP4694150B2 (en) * 2003-06-20 2011-06-08 東京エレクトロン株式会社 Processing method and processing system
KR101164959B1 (en) * 2005-04-06 2012-07-12 주식회사 동진쎄미켐 Remover composition for photoresist of semiconductor device
EP2759881A1 (en) * 2005-06-07 2014-07-30 Advanced Technology Materials, Inc. Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
US20100129756A1 (en) * 2007-05-15 2010-05-27 Willi-Kurt Gries Gum solution for developing and gumming a photopolymer printing plate
CN101870932B (en) * 2010-06-12 2012-02-29 山东大学 A kind of anisotropic conductive adhesive film remover

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591626B2 (en) * 1987-09-16 1997-03-19 東京応化工業株式会社 Stripper for resist
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US5561105A (en) * 1995-05-08 1996-10-01 Ocg Microelectronic Materials, Inc. Chelating reagent containing photoresist stripper composition
JP3236220B2 (en) * 1995-11-13 2001-12-10 東京応化工業株式会社 Stripper composition for resist
JP3932150B2 (en) * 1997-10-03 2007-06-20 ナガセケムテックス株式会社 Resist stripper composition and method of using the same
WO1999019447A1 (en) * 1997-10-14 1999-04-22 Advanced Chemical Systems International, Inc. Ammonium borate containing compositions for stripping residues from semiconductor substrates
KR100288769B1 (en) * 1998-07-10 2001-09-17 윤종용 Stripper composition for photoresist
KR100360397B1 (en) * 1999-11-26 2002-11-18 삼성전자 주식회사 Resist removing composition and resist removing method using the same

Also Published As

Publication number Publication date
CN1217236C (en) 2005-08-31
JP3742624B2 (en) 2006-02-08
TW594443B (en) 2004-06-21
JP2004501404A (en) 2004-01-15
KR20010113396A (en) 2001-12-28
WO2001098837A1 (en) 2001-12-27
CN1454334A (en) 2003-11-05

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