AU2003265098A1 - Photoresist remover composition - Google Patents

Photoresist remover composition

Info

Publication number: AU2003265098A1
Authority: AU; Australia
Prior art keywords: remover composition; photoresist remover; photoresist; composition; remover
Prior art date: 2002-09-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003265098A

Inventor

Woo-Shik Cheon

Sam-Young Cho

Wei-Yong Kim

Soon-Hee Park

Seok-Il Yoon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Dongjin Semichem Co Ltd

Original Assignee

Dongjin Semichem Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-09-30

Filing date

2003-09-30

Publication date

2004-04-19

2003-09-30 Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd

2004-04-19 Publication of AU2003265098A1 publication Critical patent/AU2003265098A1/en

Status Abandoned legal-status Critical Current

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
- H10P50/287—

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)

AU2003265098A 2002-09-30 2003-09-30 Photoresist remover composition Abandoned AU2003265098A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
KR10-2002-0059552		2002-09-30
KR1020020059552A KR100862988B1 (en)	2002-09-30	2002-09-30	Photoresist Remover Composition
PCT/KR2003/002007 WO2004029723A1 (en)	2002-09-30	2003-09-30	Photoresist remover composition

Publications (1)

Publication Number	Publication Date
AU2003265098A1 true AU2003265098A1 (en)	2004-04-19

Family

ID=32040946

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003265098A Abandoned AU2003265098A1 (en)	2002-09-30	2003-09-30	Photoresist remover composition

Country Status (5)

Country	Link
KR (1)	KR100862988B1 (en)
CN (1)	CN1682155B (en)
AU (1)	AU2003265098A1 (en)
TW (1)	TWI228640B (en)
WO (1)	WO2004029723A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20050032657A1 (en) *	2003-08-06	2005-02-10	Kane Sean Michael	Stripping and cleaning compositions for microelectronics
TWI300580B (en) *	2004-11-04	2008-09-01	Nec Lcd Technologies Ltd	Method of processing substrate and chemical used in the same (1)
DE602006017559D1 (en) *	2005-08-13	2010-11-25	Techno Semichem Co Ltd	FOTORESIST DISTANCE COMPOSITION FOR SEMICONDUCTOR MANUFACTURING
RU2352020C1 (en) *	2007-07-16	2009-04-10	Государственное образовательное учреждение высшего профессионального образования "Дагестанский государственный университет" (ДГТУ)	Method of photoresist removal
WO2010118916A1 (en)	2009-04-16	2010-10-21	Basf Se	Organic photoresist stripper composition
KR102012464B1 (en) *	2013-09-06	2019-08-20	동우 화인켐 주식회사	Resist stripper composition and method of manufacturing flat panel display devices using the same
TWI851333B (en) *	2023-07-10	2024-08-01	關東鑫林科技股份有限公司	Resist layer removing composition and method for removing resist layer using the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH05259066A (en) *	1992-03-13	1993-10-08	Texas Instr Japan Ltd	Stripping liquid for positive photoresist and method for manufacturing semiconductor device
JPH07130700A (en) *	1993-10-29	1995-05-19	Sanyo Electric Co Ltd	Manufacture of semiconductor device
US6500605B1 (en) *	1997-05-27	2002-12-31	Tokyo Electron Limited	Removal of photoresist and residue from substrate using supercritical carbon dioxide process
JP4308959B2 (en) *	1998-02-27	2009-08-05	関東化学株式会社	Photoresist stripping composition
US6432209B2 (en) *	1998-03-03	2002-08-13	Silicon Valley Chemlabs	Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
JP3477390B2 (en) *	1999-01-22	2003-12-10	花王株式会社	Release agent composition
KR100286860B1 (en) *	1998-12-31	2001-07-12	주식회사 동진쎄미켐	Photoresist Remover Composition
US6562726B1 (en) *	1999-06-29	2003-05-13	Micron Technology, Inc.	Acid blend for removing etch residue
KR100363271B1 (en) *	2000-06-12	2002-12-05	주식회사 동진쎄미켐	Photoresist remover composition
AU2001278890A1 (en) *	2000-07-10	2002-01-21	Ekc Technology, Inc.	Compositions for cleaning organic and plasma etched residues for semiconductor devices
KR100742119B1 (en) *	2001-02-16	2007-07-24	주식회사 동진쎄미켐	Photoresist Remover Composition
KR100416657B1 (en) *	2001-06-26	2004-01-31	동부전자 주식회사	Method for manufacturing a contact hole of semiconductor device

2002
- 2002-09-30 KR KR1020020059552A patent/KR100862988B1/en not_active Expired - Fee Related
2003
- 2003-09-30 TW TW092127124A patent/TWI228640B/en not_active IP Right Cessation
- 2003-09-30 WO PCT/KR2003/002007 patent/WO2004029723A1/en not_active Ceased
- 2003-09-30 AU AU2003265098A patent/AU2003265098A1/en not_active Abandoned
- 2003-09-30 CN CN038219662A patent/CN1682155B/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CN1682155B (en)	2010-05-26
TWI228640B (en)	2005-03-01
CN1682155A (en)	2005-10-12
KR100862988B1 (en)	2008-10-13
WO2004029723A1 (en)	2004-04-08
KR20040028382A (en)	2004-04-03
TW200424760A (en)	2004-11-16

Publication	Publication Date	Title
AU2003297347A1 (en)	2004-07-22	Photoresist removal
AU2003219116A1 (en)	2003-10-13	Fragrance compositions
AU2003254898A1 (en)	2004-02-25	Fragrance composition
AU2003285288A1 (en)	2004-05-04	Composition
AU2003256071A1 (en)	2004-02-25	Detergent compositions
AU2002950744A0 (en)	2002-09-12	Composition
TWI320516B (en)	2010-02-11	Photoresist residue remover composition
AU2003201595A1 (en)	2003-10-08	Fragrance compositions
AU6599300A (en)	2001-03-19	Photoresist remover composition
AU2003236353A1 (en)	2003-10-20	Photopolymerizable composition
AU2003235708A1 (en)	2003-07-30	Polytartrate composition
AU2003266611A1 (en)	2004-07-29	Detergent composition
AU2003302305A1 (en)	2004-07-22	Benzoquinolizine-2-carboxylic acid-containing compositions
AU2002254232A1 (en)	2002-10-08	Photoresist composition
AU2003269904A1 (en)	2004-01-23	Antigen-polymer compositions
AU2003289123A1 (en)	2004-06-23	Positive resist composition
AU2003217110A1 (en)	2003-09-16	Novel formulation
AU2001262793A1 (en)	2001-12-24	Photoresist remover composition
AU2003244289A1 (en)	2004-01-19	Contamination remover
AU2003258707A1 (en)	2004-04-08	Detergent compositions
AU2003265098A1 (en)	2004-04-19	Photoresist remover composition
AU2003205961A1 (en)	2003-09-02	Photo-sensitive composition
AU2002327300A1 (en)	2004-03-03	Remover solution
AU2003258708A1 (en)	2004-04-08	Detergent compositions
AU2003277581A1 (en)	2004-06-07	Resist composition

Legal Events

Date	Code	Title	Description
2005-06-16	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase