[go: up one dir, main page]

NO20065598L - Tunneloverganger for langbolge-VCSEL-er. - Google Patents

Tunneloverganger for langbolge-VCSEL-er.

Info

Publication number
NO20065598L
NO20065598L NO20065598A NO20065598A NO20065598L NO 20065598 L NO20065598 L NO 20065598L NO 20065598 A NO20065598 A NO 20065598A NO 20065598 A NO20065598 A NO 20065598A NO 20065598 L NO20065598 L NO 20065598L
Authority
NO
Norway
Prior art keywords
tunnel
type
transition
vcsels
haul
Prior art date
Application number
NO20065598A
Other languages
English (en)
Inventor
Rajarm Bhat
Nobuhiko Nishiyama
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of NO20065598L publication Critical patent/NO20065598L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

En tunnelovergangsanordning (102) med minimal hydrogenpassivering av akseptorer omfatter et p-type tunnelovergangslag (106) av et første halvleder- materiale som er dopet med karbon. Det første halvledermaterialet omfatter aluminium, gallium, arsen og antimon. Et n-type tunnelovergangslag (104) av et andre halvledermateriale omfatter indium, gallium, arsen og én av aluminium og fosfor. Overgangen mellom p-type og n-type tuimelovergangslagene danner en tunnelovergang (110).
NO20065598A 2004-05-17 2006-12-05 Tunneloverganger for langbolge-VCSEL-er. NO20065598L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/848,456 US6933539B1 (en) 2004-05-17 2004-05-17 Tunnel junctions for long-wavelength VCSELs
PCT/US2005/017288 WO2005117135A1 (en) 2004-05-17 2005-05-17 Tunnel junctions for long-wavelength vcsels

Publications (1)

Publication Number Publication Date
NO20065598L true NO20065598L (no) 2006-12-05

Family

ID=34839014

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20065598A NO20065598L (no) 2004-05-17 2006-12-05 Tunneloverganger for langbolge-VCSEL-er.

Country Status (9)

Country Link
US (2) US6933539B1 (no)
EP (1) EP1766689A4 (no)
JP (1) JP2007538410A (no)
KR (1) KR20070012550A (no)
CN (1) CN1973378A (no)
AU (1) AU2005330578A1 (no)
CA (1) CA2567028A1 (no)
NO (1) NO20065598L (no)
WO (1) WO2005117135A1 (no)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7085298B2 (en) * 2003-10-31 2006-08-01 Finisar Corporation Tunnel junction utilizing GaPSb, AlGaPSb
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
US7319386B2 (en) 2004-08-02 2008-01-15 Hill-Rom Services, Inc. Configurable system for alerting caregivers
JP2007304472A (ja) * 2006-05-15 2007-11-22 Nippon Telegr & Teleph Corp <Ntt> 半導体光変調器
WO2007135772A1 (ja) * 2006-05-19 2007-11-29 Nec Corporation 発光素子
JP2008235574A (ja) * 2007-03-20 2008-10-02 Sumitomo Electric Ind Ltd 面発光半導体レーザ
TWM324049U (en) * 2007-05-21 2007-12-21 Universal Scient Ind Co Ltd Packaging structure of wireless communication module
WO2008156421A2 (en) * 2007-06-19 2008-12-24 Qunano Ab Nanowire-based solar cell structure
JP2009059918A (ja) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd 光半導体デバイス
JP5649157B2 (ja) * 2009-08-01 2015-01-07 住友電気工業株式会社 半導体素子およびその製造方法
CN102832538A (zh) * 2012-09-10 2012-12-19 中国科学院半导体研究所 多层量子点隧道结串联的有源区宽带增益结构
JP2013157645A (ja) * 2013-05-22 2013-08-15 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ及び電界吸収型変調器集積分布帰還型レーザ
JP2016092175A (ja) * 2014-11-04 2016-05-23 三菱電機株式会社 半導体光素子
DE102016206824A1 (de) * 2015-04-21 2016-10-27 Infineon Technologies Austria Ag Struktur zur plasmonischen Wellenlängentrennung, Strukturen zur photonischen Wellenlängentrennung, Microlab-Systeme, optische Empfänger, Verfahren zur Herstellung einer Struktur zur plasmonischen Wellenlängentrennung, Verfahren zur Herstellung einer Struktur zur photonischen Wellenlängentrennung
US20170084771A1 (en) * 2015-09-21 2017-03-23 The Boeing Company Antimonide-based high bandgap tunnel junction for semiconductor devices
DE102017005950A1 (de) * 2017-06-21 2018-12-27 Azur Space Solar Power Gmbh Solarzellenstapel
WO2019182143A1 (ja) * 2018-03-23 2019-09-26 住友化学株式会社 光電変換素子
DE102019003068A1 (de) * 2019-04-30 2020-11-05 3-5 Power Electronics GmbH Stapelförmige hochsperrende lnGaAS-Halbleiterleistungsdiode
CN110932092B (zh) * 2019-12-12 2024-12-24 长春中科长光时空光电技术有限公司 一种长波长垂直腔面发射激光器及其制备方法
US11616343B2 (en) 2020-05-21 2023-03-28 Lumentum Operations Llc Vertical-cavity surface-emitting laser with a tunnel junction
US11855413B2 (en) 2020-06-22 2023-12-26 Lumentum Operations Llc Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode
US20240006856A1 (en) * 2020-11-25 2024-01-04 Nippon Telegraph And Telephone Corporation Semiconductor Structure and Semiconductor Device
WO2023153084A1 (ja) 2022-02-09 2023-08-17 ソニーグループ株式会社 面発光レーザ及び面発光レーザの製造方法
CN114744484B (zh) * 2022-04-08 2024-03-26 青岛科技大学 一种基于GaAs基高带隙隧道结的大功率激光器结构
CN114927940B (zh) * 2022-05-17 2025-11-11 中国科学院半导体研究所 隧道级联多有源区半导体激光器及其制备方法
CN115313155B (zh) * 2022-08-30 2025-02-07 电子科技大学 一种异质隧道结的多结垂直腔面发射激光器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715357A1 (en) 1994-11-30 1996-06-05 Rockwell International Corporation Carbon-doped GaAsSb semiconductor
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6765238B2 (en) 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures

Also Published As

Publication number Publication date
KR20070012550A (ko) 2007-01-25
EP1766689A1 (en) 2007-03-28
CN1973378A (zh) 2007-05-30
JP2007538410A (ja) 2007-12-27
US6982439B2 (en) 2006-01-03
WO2005117135A1 (en) 2005-12-08
CA2567028A1 (en) 2005-12-08
AU2005330578A8 (en) 2008-08-14
US20050253164A1 (en) 2005-11-17
AU2005330578A1 (en) 2006-12-14
US6933539B1 (en) 2005-08-23
EP1766689A4 (en) 2008-01-09

Similar Documents

Publication Publication Date Title
NO20065598L (no) Tunneloverganger for langbolge-VCSEL-er.
Ryu et al. Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes
EP2306529A3 (en) Nitride semiconductor light emitting device and fabrication method thereof
EP3570324A3 (en) Integrated circuit device
Kim et al. Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes
MY165986A (en) Photovoltaic devices including heterojunctions
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
TW200733808A (en) Organic light emitting device and method for manufacturing the same
Cheriton et al. Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
TW200711171A (en) Gallium nitride based semiconductor device and method of manufacturing same
US9064610B2 (en) Betavoltaic battery with diamond moderator and related system and method
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
DE602006006088D1 (de) Brid-kristallorientierung
Chang et al. Graphene/SiO2/p‐GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters
Riuttanen et al. Diffusion injected multi-quantum well light-emitting diode structure
WO2009022592A1 (ja) ソフトリカバリーダイオード
TW200605403A (en) Improved substrate buffer structure for group Ⅲ nitride devices
TW200514283A (en) Group III-nitride-based compound semiconductor device
Zhang et al. GaN/Al0. 1Ga0. 9N‐based visible‐blind double heterojunction phototransistor with a collector‐up structure
TW200623331A (en) Semiconductor device having a silicon layer in a gate electrode
Kumar et al. Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga1–x N/GaN High Electron Mobility Transistor Structures on Si (111)
US8284345B2 (en) Silicon light-emitting element
TWI263361B (en) Group III nitride semiconductor light-emitting device
TW200711147A (en) Semiconductor device
WO2003077283A3 (en) Drift-dominated detector

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application