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TWI263361B - Group III nitride semiconductor light-emitting device - Google Patents

Group III nitride semiconductor light-emitting device

Info

Publication number
TWI263361B
TWI263361B TW94113603A TW94113603A TWI263361B TW I263361 B TWI263361 B TW I263361B TW 94113603 A TW94113603 A TW 94113603A TW 94113603 A TW94113603 A TW 94113603A TW I263361 B TWI263361 B TW I263361B
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
iii nitride
group iii
emitting device
semiconductor light
Prior art date
Application number
TW94113603A
Other languages
Chinese (zh)
Other versions
TW200541115A (en
Inventor
Hisayuki Miki
Akira Bando
Takashi Udagawa
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200541115A publication Critical patent/TW200541115A/en
Application granted granted Critical
Publication of TWI263361B publication Critical patent/TWI263361B/en

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Abstract

A group III nitride semiconductor light-emitting device provided on a crystal substrate with an n-type and p-type group III nitride semiconductor of AlXGaYInZN1-aMa, wherein 0 <= X <= 1, 0 <= Y <= 1, 0 <= Z <= 1, X+Y+Z =1, M denotes a group V element other than N and 0 <= a < 1, includes an n-type electrode contact layer of group III nitride semiconductor including a region doped with Ge and a light-emitting layer including a region undoped or doped with at least one element selected from the group consisting of Si, C, Sn and Pb.
TW94113603A 2004-04-28 2005-04-28 Group III nitride semiconductor light-emitting device TWI263361B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004132784 2004-04-28
JP2005017991A JP2005340762A (en) 2004-04-28 2005-01-26 Group iii nitride semiconductor light-emitting element

Publications (2)

Publication Number Publication Date
TW200541115A TW200541115A (en) 2005-12-16
TWI263361B true TWI263361B (en) 2006-10-01

Family

ID=35493927

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94113603A TWI263361B (en) 2004-04-28 2005-04-28 Group III nitride semiconductor light-emitting device

Country Status (2)

Country Link
JP (1) JP2005340762A (en)
TW (1) TWI263361B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL1798781T3 (en) * 2005-12-15 2010-03-31 Lg Electronics Inc LED diode having a vertical structure and a method of its production
KR101239856B1 (en) * 2006-02-02 2013-03-06 서울옵토디바이스주식회사 Light-emitting diode and Method of manufacturing the same
JP2011159771A (en) * 2010-01-29 2011-08-18 Nec Corp Nitride semiconductor light-emitting element, and manufacturing method of the nitride semiconductor light-emitting element, and electronic device
US10529561B2 (en) * 2015-12-28 2020-01-07 Texas Instruments Incorporated Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices
CN117810324B (en) * 2024-02-29 2024-05-24 江西兆驰半导体有限公司 Light-emitting diode epitaxial wafer and preparation method thereof, and light-emitting diode
CN118335858B (en) * 2024-06-12 2024-09-03 湘能华磊光电股份有限公司 A method for growing and preparing a single crystal of a light emitting diode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890390B2 (en) * 1994-07-06 1999-05-10 日亜化学工業株式会社 Gallium nitride based compound semiconductor light emitting device
JP3576743B2 (en) * 1996-04-22 2004-10-13 東芝電子エンジニアリング株式会社 Light emitting element
JP3448196B2 (en) * 1997-07-25 2003-09-16 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP3275810B2 (en) * 1997-11-18 2002-04-22 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP3620292B2 (en) * 1997-09-01 2005-02-16 日亜化学工業株式会社 Nitride semiconductor device
JP4122552B2 (en) * 1997-11-12 2008-07-23 日亜化学工業株式会社 Light emitting device
JP3719047B2 (en) * 1999-06-07 2005-11-24 日亜化学工業株式会社 Nitride semiconductor device
JP3803696B2 (en) * 2000-11-21 2006-08-02 日亜化学工業株式会社 Nitride semiconductor device
JP2002170988A (en) * 2000-12-01 2002-06-14 Sharp Corp Nitride semiconductor light emitting device and light emitting device thereof
JP2003046127A (en) * 2001-05-23 2003-02-14 Sanyo Electric Co Ltd Nitride semiconductor light-emitting element
JP2003229645A (en) * 2002-01-31 2003-08-15 Nec Corp Quantum well structure, semiconductor device using the same, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2005340762A (en) 2005-12-08
TW200541115A (en) 2005-12-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees