NL2003310A1 - Radiation source, lithographic apparatus and device manufacturing method. - Google Patents
Radiation source, lithographic apparatus and device manufacturing method. Download PDFInfo
- Publication number
- NL2003310A1 NL2003310A1 NL2003310A NL2003310A NL2003310A1 NL 2003310 A1 NL2003310 A1 NL 2003310A1 NL 2003310 A NL2003310 A NL 2003310A NL 2003310 A NL2003310 A NL 2003310A NL 2003310 A1 NL2003310 A1 NL 2003310A1
- Authority
- NL
- Netherlands
- Prior art keywords
- radiation source
- device manufacturing
- lithographic apparatus
- lithographic
- manufacturing
- Prior art date
Links
Classifications
-
- H10P76/2042—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/009—Auxiliary arrangements not involved in the plasma generation
- H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13614408P | 2008-08-14 | 2008-08-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2003310A1 true NL2003310A1 (nl) | 2010-02-16 |
Family
ID=41259409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2003310A NL2003310A1 (nl) | 2008-08-14 | 2009-07-30 | Radiation source, lithographic apparatus and device manufacturing method. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9207548B2 (nl) |
| JP (1) | JP5732392B2 (nl) |
| KR (1) | KR101652361B1 (nl) |
| CN (1) | CN102119365B (nl) |
| NL (1) | NL2003310A1 (nl) |
| TW (1) | TWI468874B (nl) |
| WO (1) | WO2010017892A1 (nl) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2545413A1 (en) * | 2010-03-12 | 2013-01-16 | ASML Netherlands B.V. | Radiation source, lithographic apparatus and device manufacturing method |
| US9513569B2 (en) | 2010-03-18 | 2016-12-06 | ETH Zürich | Optical collector for collecting extreme ultraviolet radiation, method for operating such an optical collector, and EUV source with such a collector |
| WO2011116897A1 (en) | 2010-03-25 | 2011-09-29 | Eth Zurich | A beam line for a source of extreme ultraviolet (euv) radiation |
| WO2011116898A1 (en) | 2010-03-25 | 2011-09-29 | Eth Zurich | Steering device for controlling the direction and/or velocity of droplets of a target material and extreme euv source with such a steering device |
| WO2011131431A1 (en) * | 2010-04-22 | 2011-10-27 | Asml Netherlands B.V. | Collector mirror assembly and method for producing extreme ultraviolet radiation |
| US8648999B2 (en) | 2010-07-22 | 2014-02-11 | Cymer, Llc | Alignment of light source focus |
| US9268031B2 (en) | 2012-04-09 | 2016-02-23 | Kla-Tencor Corporation | Advanced debris mitigation of EUV light source |
| KR101349898B1 (ko) * | 2012-08-30 | 2014-01-16 | 한국과학기술연구원 | 극자외선 빔을 생성하기 위한 모듈 |
| CN103809385A (zh) * | 2012-11-12 | 2014-05-21 | 川宝科技股份有限公司 | 曝光机光罩结构的水平角度调整机构及方法 |
| CN103108481B (zh) * | 2012-11-30 | 2016-03-30 | 中国科学院微电子研究所 | 一种集光系统防污染保护装置 |
| CN103064259B (zh) * | 2012-12-10 | 2014-11-12 | 华中科技大学 | 一种极紫外激光等离子体光源碎屑的隔离方法及系统 |
| WO2015086232A1 (en) * | 2013-12-09 | 2015-06-18 | Asml Netherlands B.V. | Radiation source device, lithographic apparatus and device manufacturing method |
| NL2014179A (en) * | 2014-02-24 | 2015-08-25 | Asml Netherlands Bv | Lithographic system. |
| US9377693B2 (en) | 2014-03-13 | 2016-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Collector in an extreme ultraviolet lithography system with optimal air curtain protection |
| US10101664B2 (en) * | 2014-11-01 | 2018-10-16 | Kla-Tencor Corporation | Apparatus and methods for optics protection from debris in plasma-based light source |
| CN104698773B (zh) * | 2015-03-31 | 2017-06-16 | 上海华力微电子有限公司 | 光刻对准标记结构及其制造方法 |
| US9538628B1 (en) * | 2015-06-11 | 2017-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for EUV power improvement with fuel droplet trajectory stabilization |
| CN106324996B (zh) * | 2015-06-15 | 2017-10-20 | 中国科学院上海光学精密机械研究所 | 光刻机原位多通道成像质量检测装置及方法 |
| JP6556250B2 (ja) | 2015-11-06 | 2019-08-07 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| US10310380B2 (en) * | 2016-12-07 | 2019-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-brightness light source |
| CN117202469A (zh) | 2017-01-06 | 2023-12-08 | Asml荷兰有限公司 | 引导装置和相关联的系统 |
| US10955749B2 (en) | 2017-01-06 | 2021-03-23 | Asml Netherlands B.V. | Guiding device and associated system |
| JP7630515B2 (ja) * | 2019-12-23 | 2025-02-17 | エーエスエムエル ネザーランズ ビー.ブイ. | コレクタ流リング |
| JP7467174B2 (ja) * | 2020-03-16 | 2024-04-15 | ギガフォトン株式会社 | チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6972421B2 (en) | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
| US6614505B2 (en) * | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| CN1262887C (zh) * | 2001-12-28 | 2006-07-05 | Asml荷兰有限公司 | 一种光刻仪及集成电路装置的制造方法 |
| KR100589236B1 (ko) * | 2002-08-15 | 2006-06-14 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 투영장치 및 상기 장치에 사용하는 반사기조립체 |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| US7217941B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source |
| DE10337667B4 (de) * | 2003-08-12 | 2012-03-22 | Xtreme Technologies Gmbh | Plasma-Strahlungsquelle und Anordnung zur Erzeugung eines Gasvorhangs für Plasma-Strahlungsquellen |
| DE602004003015T2 (de) * | 2003-10-06 | 2007-02-08 | Asml Netherlands B.V. | Verfahren und Gerät zur Herstellung einer Schutzschicht auf einem Spiegel |
| US7167232B2 (en) * | 2003-12-30 | 2007-01-23 | Asml Netherlands B.V. | Lithographic apparatus and radiation source comprising a debris-mitigation system and method for mitigating debris particles in a lithographic apparatus |
| EP1743221B1 (en) * | 2004-03-31 | 2016-01-06 | Philips Intellectual Property & Standards GmbH | Removal of particles generated by a radiation source |
| US8094288B2 (en) * | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4578901B2 (ja) | 2004-09-09 | 2010-11-10 | 株式会社小松製作所 | 極端紫外光源装置 |
| DE102005020521B4 (de) * | 2005-04-29 | 2013-05-02 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas |
| WO2006134512A2 (en) * | 2005-06-14 | 2006-12-21 | Philips Intellectual Property & Standards Gmbh | Debris mitigation system with improved gas distribution |
| US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
| JP2007220949A (ja) * | 2006-02-17 | 2007-08-30 | Ushio Inc | 極端紫外光光源装置および極端紫外光光源装置における集光光学手段の汚染抑制方法 |
| JP2008053696A (ja) * | 2006-07-28 | 2008-03-06 | Ushio Inc | 極端紫外光光源装置および極端紫外光発生方法 |
| TW200808134A (en) * | 2006-07-28 | 2008-02-01 | Ushio Electric Inc | Light source device for producing extreme ultraviolet radiation and method of generating extreme ultraviolet radiation |
| JP4888046B2 (ja) * | 2006-10-26 | 2012-02-29 | ウシオ電機株式会社 | 極端紫外光光源装置 |
| JP5191541B2 (ja) * | 2007-08-23 | 2013-05-08 | エーエスエムエル ネザーランズ ビー.ブイ. | 極端紫外線を生成するモジュールおよび方法、並びにリソグラフィ投影装置 |
| US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
-
2009
- 2009-07-30 WO PCT/EP2009/005509 patent/WO2010017892A1/en not_active Ceased
- 2009-07-30 CN CN2009801311965A patent/CN102119365B/zh active Active
- 2009-07-30 US US13/058,776 patent/US9207548B2/en not_active Expired - Fee Related
- 2009-07-30 JP JP2011522400A patent/JP5732392B2/ja not_active Expired - Fee Related
- 2009-07-30 NL NL2003310A patent/NL2003310A1/nl not_active Application Discontinuation
- 2009-07-30 KR KR1020117005534A patent/KR101652361B1/ko active Active
- 2009-08-13 TW TW98127307A patent/TWI468874B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201009513A (en) | 2010-03-01 |
| JP5732392B2 (ja) | 2015-06-10 |
| TWI468874B (zh) | 2015-01-11 |
| US9207548B2 (en) | 2015-12-08 |
| KR20110055610A (ko) | 2011-05-25 |
| KR101652361B1 (ko) | 2016-08-30 |
| CN102119365A (zh) | 2011-07-06 |
| CN102119365B (zh) | 2013-06-05 |
| WO2010017892A1 (en) | 2010-02-18 |
| US20110188014A1 (en) | 2011-08-04 |
| JP2011530819A (ja) | 2011-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| WDAP | Patent application withdrawn |
Effective date: 20100708 |