NL2003181A1 - A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device. - Google Patents
A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device. Download PDFInfo
- Publication number
- NL2003181A1 NL2003181A1 NL2003181A NL2003181A NL2003181A1 NL 2003181 A1 NL2003181 A1 NL 2003181A1 NL 2003181 A NL2003181 A NL 2003181A NL 2003181 A NL2003181 A NL 2003181A NL 2003181 A1 NL2003181 A1 NL 2003181A1
- Authority
- NL
- Netherlands
- Prior art keywords
- lithographic apparatus
- manufacturing
- source module
- euv
- euv lithographic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/009—Auxiliary arrangements not involved in the plasma generation
- H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
-
- H10P76/2041—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12971508P | 2008-07-14 | 2008-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2003181A1 true NL2003181A1 (nl) | 2010-01-18 |
Family
ID=41061157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2003181A NL2003181A1 (nl) | 2008-07-14 | 2009-07-10 | A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9465306B2 (nl) |
| EP (1) | EP2300878B1 (nl) |
| JP (1) | JP5341992B2 (nl) |
| KR (1) | KR20110028659A (nl) |
| CN (1) | CN102084299B (nl) |
| NL (1) | NL2003181A1 (nl) |
| TW (1) | TW201007384A (nl) |
| WO (1) | WO2010007015A1 (nl) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8158960B2 (en) * | 2007-07-13 | 2012-04-17 | Cymer, Inc. | Laser produced plasma EUV light source |
| NL2004706A (nl) * | 2009-07-22 | 2011-01-25 | Asml Netherlands Bv | Radiation source. |
| CN102231935A (zh) * | 2011-05-31 | 2011-11-02 | 长春理工大学 | 一种产生相干极紫外辐射的方法及装置 |
| JP5778093B2 (ja) * | 2011-08-10 | 2015-09-16 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法 |
| NL2009358A (en) | 2011-09-23 | 2013-03-26 | Asml Netherlands Bv | Radiation source. |
| NL2009359A (en) * | 2011-09-23 | 2013-03-26 | Asml Netherlands Bv | Radiation source. |
| US9599912B2 (en) * | 2012-05-21 | 2017-03-21 | Asml Netherlands B.V. | Lithographic apparatus |
| WO2014127151A1 (en) * | 2013-02-14 | 2014-08-21 | Kla-Tencor Corporation | System and method for producing an exclusionary buffer gas flow in an euv light source |
| US9615439B2 (en) | 2015-01-09 | 2017-04-04 | Kla-Tencor Corporation | System and method for inhibiting radiative emission of a laser-sustained plasma source |
| US9899205B2 (en) * | 2016-05-25 | 2018-02-20 | Kla-Tencor Corporation | System and method for inhibiting VUV radiative emission of a laser-sustained plasma source |
| JP2024003392A (ja) * | 2022-06-27 | 2024-01-15 | ウシオ電機株式会社 | デブリ低減装置及びこれを備えた光源装置 |
| DE102022212167A1 (de) | 2022-11-16 | 2023-09-14 | Carl Zeiss Smt Gmbh | EUV-Quellen-Modul für eine EUV-Projektionsbelichtungsanlage |
| DE102024202159A1 (de) | 2024-03-07 | 2025-09-11 | Carl Zeiss Smt Gmbh | Verfahren zum räumlichen Begrenzen eines Materialabtrags, optisches Element und Anlage der Halbleitertechnologie |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7671349B2 (en) * | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
| KR100589236B1 (ko) * | 2002-08-15 | 2006-06-14 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 투영장치 및 상기 장치에 사용하는 반사기조립체 |
| US7217940B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Collector for EUV light source |
| US8075732B2 (en) * | 2004-11-01 | 2011-12-13 | Cymer, Inc. | EUV collector debris management |
| US8094288B2 (en) * | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2006134512A2 (en) | 2005-06-14 | 2006-12-21 | Philips Intellectual Property & Standards Gmbh | Debris mitigation system with improved gas distribution |
| US7598508B2 (en) * | 2005-07-13 | 2009-10-06 | Nikon Corporation | Gaseous extreme-ultraviolet spectral purity filters and optical systems comprising same |
| DE102005048670B3 (de) * | 2005-10-07 | 2007-05-24 | Xtreme Technologies Gmbh | Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle |
| JP5215540B2 (ja) * | 2006-07-18 | 2013-06-19 | ギガフォトン株式会社 | ターゲット物質供給装置 |
-
2009
- 2009-07-10 NL NL2003181A patent/NL2003181A1/nl not_active Application Discontinuation
- 2009-07-13 EP EP09780491.8A patent/EP2300878B1/en active Active
- 2009-07-13 JP JP2011517886A patent/JP5341992B2/ja active Active
- 2009-07-13 WO PCT/EP2009/058894 patent/WO2010007015A1/en not_active Ceased
- 2009-07-13 US US13/003,137 patent/US9465306B2/en active Active
- 2009-07-13 CN CN2009801260249A patent/CN102084299B/zh active Active
- 2009-07-13 KR KR1020117003284A patent/KR20110028659A/ko not_active Withdrawn
- 2009-07-14 TW TW098123778A patent/TW201007384A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102084299A (zh) | 2011-06-01 |
| EP2300878B1 (en) | 2014-11-12 |
| WO2010007015A1 (en) | 2010-01-21 |
| JP2011528180A (ja) | 2011-11-10 |
| KR20110028659A (ko) | 2011-03-21 |
| EP2300878A1 (en) | 2011-03-30 |
| TW201007384A (en) | 2010-02-16 |
| US9465306B2 (en) | 2016-10-11 |
| CN102084299B (zh) | 2013-09-11 |
| JP5341992B2 (ja) | 2013-11-13 |
| US20110109892A1 (en) | 2011-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| WDAP | Patent application withdrawn |
Effective date: 20100319 |