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MY7300371A - Ohmic contact and electrical lead for semiconductor devices - Google Patents

Ohmic contact and electrical lead for semiconductor devices

Info

Publication number
MY7300371A
MY7300371A MY371/73A MY7300371A MY7300371A MY 7300371 A MY7300371 A MY 7300371A MY 371/73 A MY371/73 A MY 371/73A MY 7300371 A MY7300371 A MY 7300371A MY 7300371 A MY7300371 A MY 7300371A
Authority
MY
Malaysia
Prior art keywords
semiconductor devices
ohmic contact
electrical lead
lead
electrical
Prior art date
Application number
MY371/73A
Other languages
English (en)
Inventor
James Alan Cunningham
Robert Scotland Clark Iii
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of MY7300371A publication Critical patent/MY7300371A/xx

Links

Classifications

    • H10P95/00
    • H10W20/40
    • H10W74/43
MY371/73A 1966-12-30 1973-12-30 Ohmic contact and electrical lead for semiconductor devices MY7300371A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60634866A 1966-12-30 1966-12-30
US60606466A 1966-12-30 1966-12-30
US79186269A 1969-01-02 1969-01-02

Publications (1)

Publication Number Publication Date
MY7300371A true MY7300371A (en) 1973-12-31

Family

ID=27416936

Family Applications (2)

Application Number Title Priority Date Filing Date
MY371/73A MY7300371A (en) 1966-12-30 1973-12-30 Ohmic contact and electrical lead for semiconductor devices
MY372/73A MY7300372A (en) 1966-12-30 1973-12-30 Ohmic contact and multi-level interconnection system for integrated circuits

Family Applications After (1)

Application Number Title Priority Date Filing Date
MY372/73A MY7300372A (en) 1966-12-30 1973-12-30 Ohmic contact and multi-level interconnection system for integrated circuits

Country Status (5)

Country Link
US (2) US3434020A (xx)
DE (2) DE1614872C3 (xx)
GB (3) GB1203086A (xx)
MY (2) MY7300371A (xx)
NL (2) NL6714670A (xx)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US6849918B1 (en) * 1965-09-28 2005-02-01 Chou H. Li Miniaturized dielectrically isolated solid state device
US7038290B1 (en) * 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US3643232A (en) * 1967-06-05 1972-02-15 Texas Instruments Inc Large-scale integration of electronic systems in microminiature form
GB1243247A (en) * 1968-03-04 1971-08-18 Texas Instruments Inc Ohmic contact and electrical interconnection system for electronic devices
US3486126A (en) * 1968-11-15 1969-12-23 Us Army High performance, wide band, vhf-uhf amplifier
US3619733A (en) * 1969-08-18 1971-11-09 Rca Corp Semiconductor device with multilevel metalization and method of making the same
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
US3654526A (en) * 1970-05-19 1972-04-04 Texas Instruments Inc Metallization system for semiconductors
US3668484A (en) * 1970-10-28 1972-06-06 Rca Corp Semiconductor device with multi-level metalization and method of making the same
US3694700A (en) * 1971-02-19 1972-09-26 Nasa Integrated circuit including field effect transistor and cerment resistor
US3795975A (en) * 1971-12-17 1974-03-12 Hughes Aircraft Co Multi-level large scale complex integrated circuit having functional interconnected circuit routed to master patterns
US4631569A (en) * 1971-12-22 1986-12-23 Hughes Aircraft Company Means and method of reducing the number of masks utilized in fabricating complex multi-level integrated circuits
US4309811A (en) * 1971-12-23 1982-01-12 Hughes Aircraft Company Means and method of reducing the number of masks utilized in fabricating complex multilevel integrated circuits
FR2188304B1 (xx) * 1972-06-15 1977-07-22 Commissariat Energie Atomique
US3833919A (en) * 1972-10-12 1974-09-03 Ncr Multilevel conductor structure and method
US3877051A (en) * 1972-10-18 1975-04-08 Ibm Multilayer insulation integrated circuit structure
US4234888A (en) * 1973-07-26 1980-11-18 Hughes Aircraft Company Multi-level large scale complex integrated circuit having functional interconnected circuit routed to master patterns
DE2435371A1 (de) * 1974-07-23 1976-02-05 Siemens Ag Integrierte halbleiteranordnung
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
US3963354A (en) * 1975-05-05 1976-06-15 Bell Telephone Laboratories, Incorporated Inspection of masks and wafers by image dissection
US4342957A (en) * 1980-03-28 1982-08-03 Honeywell Information Systems Inc. Automatic test equipment test probe contact isolation detection apparatus and method
WO1982003948A1 (en) * 1981-05-04 1982-11-11 Inc Motorola Low resistivity composite metallization for semiconductor devices and method therefor
DE4307182C2 (de) * 1993-03-08 1997-02-20 Inst Physikalische Hochtech Ev Passivierungsschichten zum Schutz funktionstragender Schichten von Bauelementen und Verfahren zu ihrer Herstellung
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US20050235598A1 (en) * 2001-10-23 2005-10-27 Andrew Liggins Wall construction method
WO2003045687A1 (en) * 2001-11-28 2003-06-05 James Hardie Research Pty Limited Adhesive-edge building panel and method of manufacture
JP4351869B2 (ja) * 2003-06-10 2009-10-28 隆 河東田 半導体を用いた電子デバイス
WO2006039762A1 (en) * 2004-10-14 2006-04-20 James Hardie International Finance B.V. Cavity wall system
US8835310B2 (en) * 2012-12-21 2014-09-16 Intermolecular, Inc. Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290565A (en) * 1963-10-24 1966-12-06 Philco Corp Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3325702A (en) * 1964-04-21 1967-06-13 Texas Instruments Inc High temperature electrical contacts for silicon devices
US3341753A (en) * 1964-10-21 1967-09-12 Texas Instruments Inc Metallic contacts for semiconductor devices
US3290570A (en) * 1964-04-28 1966-12-06 Texas Instruments Inc Multilevel expanded metallic contacts for semiconductor devices
US3365628A (en) * 1965-09-16 1968-01-23 Texas Instruments Inc Metallic contacts for semiconductor devices
US3419765A (en) * 1965-10-01 1968-12-31 Texas Instruments Inc Ohmic contact to semiconductor devices

Also Published As

Publication number Publication date
DE1614872A1 (de) 1970-02-26
NL6714670A (xx) 1968-07-01
GB1200656A (en) 1970-07-29
MY7300372A (en) 1973-12-31
GB1203087A (en) 1970-08-26
US3581161A (en) 1971-05-25
DE1789106A1 (de) 1971-09-23
DE1614872C3 (de) 1974-01-24
US3434020A (en) 1969-03-18
NL6714669A (xx) 1968-07-01
GB1203086A (en) 1970-08-26

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