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MXPA02004039A - Eliminacion de fotoresist y residuo del sustrato usando proceso de dioxido de carbono supercritico. - Google Patents

Eliminacion de fotoresist y residuo del sustrato usando proceso de dioxido de carbono supercritico.

Info

Publication number
MXPA02004039A
MXPA02004039A MXPA02004039A MXPA02004039A MXPA02004039A MX PA02004039 A MXPA02004039 A MX PA02004039A MX PA02004039 A MXPA02004039 A MX PA02004039A MX PA02004039 A MXPA02004039 A MX PA02004039A MX PA02004039 A MXPA02004039 A MX PA02004039A
Authority
MX
Mexico
Prior art keywords
photoresist
removal
carbon dioxide
supercritical carbon
dioxide process
Prior art date
Application number
MXPA02004039A
Other languages
English (en)
Inventor
Maximilian A Biberger
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of MXPA02004039A publication Critical patent/MXPA02004039A/es

Links

Classifications

    • H10P95/00—
    • H10P70/273—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H10P50/287—
    • H10P70/234—
    • H10P70/80—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
MXPA02004039A 1999-11-02 2000-11-01 Eliminacion de fotoresist y residuo del sustrato usando proceso de dioxido de carbono supercritico. MXPA02004039A (es)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16312099P 1999-11-02 1999-11-02
US16311699P 1999-11-02 1999-11-02
US19966100P 2000-04-25 2000-04-25
US09/697,227 US6500605B1 (en) 1997-05-27 2000-10-25 Removal of photoresist and residue from substrate using supercritical carbon dioxide process
PCT/US2000/030218 WO2001033613A2 (en) 1999-11-02 2000-11-01 Removal of photoresist and residue from substrate using supercritical carbon dioxide process

Publications (1)

Publication Number Publication Date
MXPA02004039A true MXPA02004039A (es) 2003-08-20

Family

ID=27496540

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA02004039A MXPA02004039A (es) 1999-11-02 2000-11-01 Eliminacion de fotoresist y residuo del sustrato usando proceso de dioxido de carbono supercritico.

Country Status (9)

Country Link
US (1) US6500605B1 (es)
EP (1) EP1226603A2 (es)
JP (1) JP3771496B2 (es)
KR (1) KR100525855B1 (es)
CN (1) CN1171288C (es)
AU (1) AU1455001A (es)
CA (1) CA2387334A1 (es)
MX (1) MXPA02004039A (es)
WO (1) WO2001033613A2 (es)

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US6500605B1 (en) 2002-12-31
WO2001033613A3 (en) 2002-01-10
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EP1226603A2 (en) 2002-07-31
HK1050957A1 (en) 2003-07-11
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