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MX2014002269A - Dispositivo de semiconductor. - Google Patents

Dispositivo de semiconductor.

Info

Publication number
MX2014002269A
MX2014002269A MX2014002269A MX2014002269A MX2014002269A MX 2014002269 A MX2014002269 A MX 2014002269A MX 2014002269 A MX2014002269 A MX 2014002269A MX 2014002269 A MX2014002269 A MX 2014002269A MX 2014002269 A MX2014002269 A MX 2014002269A
Authority
MX
Mexico
Prior art keywords
semiconductor substrate
anode
layers
semiconductor device
region
Prior art date
Application number
MX2014002269A
Other languages
English (en)
Inventor
Akitaka Soeno
Original Assignee
Toyota Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Co Ltd filed Critical Toyota Motor Co Ltd
Publication of MX2014002269A publication Critical patent/MX2014002269A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Se proporciona un dispositivo de semiconductor en el cual se forman una región de diodo y una región IGBT sobre un mismo substrato de semiconductor; la región de diodo incluye una pluralidad de primeras capas de ánodo tipo conductividad expuestas a una superficie del substrato de semiconductor y separadas unas de otras; la región IGBT incluye una pluralidad de primeras capas de contacto de cuerpo de tipo conductividad que están expuestas a la superficie del substrato de semiconductor y separadas unas de otras; la capa de ánodo incluye al menos una o más de las primeras capas de ánodo; la primera capa de ánodo está formada en una posición en las inmediaciones de al menos la región IGBT, y un área de una dirección plana del substrato de semiconductor en cada una de las primeras capas de ánodo es mayor que el área de una dirección plana del substrato de semiconductor en la capa de contacto de cuerpo en las inmediaciones más cercanas de la región de diodo.
MX2014002269A 2011-08-30 2011-08-30 Dispositivo de semiconductor. MX2014002269A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/069542 WO2013030943A1 (ja) 2011-08-30 2011-08-30 半導体装置

Publications (1)

Publication Number Publication Date
MX2014002269A true MX2014002269A (es) 2014-04-25

Family

ID=47755496

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2014002269A MX2014002269A (es) 2011-08-30 2011-08-30 Dispositivo de semiconductor.

Country Status (11)

Country Link
US (1) US9379224B2 (es)
EP (1) EP2752875B1 (es)
JP (1) JP5630582B2 (es)
KR (1) KR101544332B1 (es)
CN (1) CN103765582B (es)
AU (1) AU2011375931B2 (es)
BR (1) BR112014002246B1 (es)
MX (1) MX2014002269A (es)
PH (1) PH12014500451B1 (es)
RU (1) RU2562934C1 (es)
WO (1) WO2013030943A1 (es)

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Publication number Priority date Publication date Assignee Title
CN104871312B (zh) * 2012-12-20 2017-06-16 丰田自动车株式会社 半导体装置
JP6144510B2 (ja) * 2013-03-11 2017-06-07 三菱電機株式会社 半導体装置の製造方法
JP5918288B2 (ja) 2014-03-03 2016-05-18 トヨタ自動車株式会社 半導体装置
JP6221974B2 (ja) * 2014-07-14 2017-11-01 トヨタ自動車株式会社 半導体装置
DE102014110681B4 (de) * 2014-07-29 2019-06-06 Infineon Technologies Ag Rückwärts leitender igbt und herstellungsverfahren dafür
JP6222702B2 (ja) * 2014-09-11 2017-11-01 株式会社東芝 半導体装置
JP6003961B2 (ja) * 2014-11-04 2016-10-05 トヨタ自動車株式会社 半導体装置
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置
US9876011B2 (en) * 2015-11-20 2018-01-23 Kabushiki Kaisha Toshiba Semiconductor device
WO2017155122A1 (ja) * 2016-03-10 2017-09-14 富士電機株式会社 半導体装置
DE102016219020B4 (de) * 2016-09-30 2019-11-07 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren zum Bearbeiten einer Leistungshalbleitervorrichtung
JP6666292B2 (ja) * 2017-03-22 2020-03-13 トヨタ自動車株式会社 半導体装置
JP7067041B2 (ja) * 2017-12-11 2022-05-16 株式会社デンソー 半導体装置
JP7095303B2 (ja) 2018-02-14 2022-07-05 富士電機株式会社 半導体装置
US10608122B2 (en) * 2018-03-13 2020-03-31 Semicondutor Components Industries, Llc Schottky device and method of manufacture
CN111463270A (zh) * 2020-03-23 2020-07-28 珠海格力电器股份有限公司 一种igbt结构及其制备方法
JP7584954B2 (ja) * 2020-09-14 2024-11-18 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7475251B2 (ja) * 2020-10-01 2024-04-26 三菱電機株式会社 半導体装置
JP7370309B2 (ja) * 2020-10-21 2023-10-27 三菱電機株式会社 逆導通型半導体装置および逆導通型半導体装置の製造方法
JP7533146B2 (ja) * 2020-11-16 2024-08-14 三菱電機株式会社 半導体装置
JP7630398B2 (ja) * 2021-09-17 2025-02-17 株式会社東芝 半導体装置
JP7717652B2 (ja) 2022-03-22 2025-08-04 株式会社東芝 半導体装置及び半導体回路
CN116153992B (zh) * 2023-04-21 2023-06-23 上海陆芯电子科技有限公司 一种逆导型绝缘栅双极型晶体管

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JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
FR2751790B1 (fr) * 1996-07-26 1998-11-27 Sgs Thomson Microelectronics Assemblage monolithique d'un transistor igbt et d'une diode rapide
JP4167313B2 (ja) * 1997-03-18 2008-10-15 株式会社東芝 高耐圧電力用半導体装置
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JP4840370B2 (ja) * 2008-01-16 2011-12-21 トヨタ自動車株式会社 半導体装置とその半導体装置を備えている給電装置の駆動方法
JP5206096B2 (ja) * 2008-04-25 2013-06-12 トヨタ自動車株式会社 ダイオードとそのダイオードを備えている半導体装置
JP2010067901A (ja) * 2008-09-12 2010-03-25 Toyota Motor Corp 半導体装置とその製造方法
JP4840482B2 (ja) 2008-10-14 2011-12-21 株式会社デンソー 半導体装置
JP5045733B2 (ja) * 2008-12-24 2012-10-10 株式会社デンソー 半導体装置
JP5458595B2 (ja) * 2009-02-17 2014-04-02 トヨタ自動車株式会社 半導体装置、スイッチング装置、及び、半導体装置の制御方法。
JP2010263149A (ja) * 2009-05-11 2010-11-18 Toyota Motor Corp 半導体装置
WO2011030454A1 (ja) * 2009-09-14 2011-03-17 トヨタ自動車株式会社 ダイオード領域とｉｇｂｔ領域を有する半導体基板を備える半導体装置
JP5190485B2 (ja) 2010-04-02 2013-04-24 株式会社豊田中央研究所 半導体装置

Also Published As

Publication number Publication date
WO2013030943A1 (ja) 2013-03-07
RU2562934C1 (ru) 2015-09-10
EP2752875A1 (en) 2014-07-09
PH12014500451B1 (en) 2018-04-06
EP2752875A4 (en) 2015-11-18
JPWO2013030943A1 (ja) 2015-03-23
KR101544332B1 (ko) 2015-08-12
BR112014002246A2 (pt) 2017-02-21
EP2752875B1 (en) 2017-11-29
AU2011375931B2 (en) 2014-07-24
US9379224B2 (en) 2016-06-28
PH12014500451A1 (en) 2014-04-21
US20140217465A1 (en) 2014-08-07
AU2011375931A1 (en) 2014-03-13
KR20140048282A (ko) 2014-04-23
BR112014002246B1 (pt) 2020-11-10
CN103765582A (zh) 2014-04-30
CN103765582B (zh) 2016-08-24
JP5630582B2 (ja) 2014-11-26

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