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MX2012010732A - Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos. - Google Patents

Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos.

Info

Publication number
MX2012010732A
MX2012010732A MX2012010732A MX2012010732A MX2012010732A MX 2012010732 A MX2012010732 A MX 2012010732A MX 2012010732 A MX2012010732 A MX 2012010732A MX 2012010732 A MX2012010732 A MX 2012010732A MX 2012010732 A MX2012010732 A MX 2012010732A
Authority
MX
Mexico
Prior art keywords
chalcogen
thin film
based thin
film structures
tie layers
Prior art date
Application number
MX2012010732A
Other languages
English (en)
Inventor
Jennifer E Gerbi
Original Assignee
Dow Global Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies Llc filed Critical Dow Global Technologies Llc
Publication of MX2012010732A publication Critical patent/MX2012010732A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H10P14/203—
    • H10P14/22—
    • H10P14/3436—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)

Abstract

La presente invención proporciona estructuras fotovoltaicas que contienen calcógeno mejorado, así como también las composiciones relacionadas, dispositivos fotovoltaicos que incorporan estas estructuras, métodos y dispositivos para elaborar estas estructuras, y métodos para utilizar estas estructuras y dispositivos. De acuerdo con los principios de la presente invención, se mejora la adhesión de composiciones PACB, a través del uso de los estratos que contienen calcógeno.
MX2012010732A 2010-03-17 2011-03-14 Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos. MX2012010732A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31484010P 2010-03-17 2010-03-17
PCT/US2011/028310 WO2011115887A1 (en) 2010-03-17 2011-03-14 Photoelectronically active, chalcogen-based thin film structures incorporating tie layers

Publications (1)

Publication Number Publication Date
MX2012010732A true MX2012010732A (es) 2013-04-03

Family

ID=43975196

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2012010733A MX2012010733A (es) 2010-03-17 2011-03-14 Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales.
MX2012010732A MX2012010732A (es) 2010-03-17 2011-03-14 Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MX2012010733A MX2012010733A (es) 2010-03-17 2011-03-14 Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales.

Country Status (10)

Country Link
US (4) US8969720B2 (es)
EP (2) EP2548217B1 (es)
JP (2) JP5837564B2 (es)
KR (2) KR101761098B1 (es)
CN (2) CN102893370B (es)
BR (2) BR112012023255A2 (es)
MX (2) MX2012010733A (es)
SG (2) SG184088A1 (es)
TW (2) TW201201397A (es)
WO (2) WO2011115894A1 (es)

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CN108305906B (zh) * 2018-02-08 2019-09-03 北京铂阳顶荣光伏科技有限公司 太阳能电池吸收层的制备方法和太阳能电池的制备方法
CN108493768A (zh) * 2018-04-10 2018-09-04 中国科学院半导体研究所 脊型波导结构激光器p型电极的制备方法
CN110649121A (zh) * 2018-06-11 2020-01-03 北京铂阳顶荣光伏科技有限公司 一种太阳能电池吸收层及其制备方法、太阳能电池
KR102295733B1 (ko) * 2018-08-09 2021-08-31 한양대학교 에리카산학협력단 광전기화학 구조체 및 그 제조 방법, 그리고 광전기화학 소자.
KR102665745B1 (ko) * 2018-11-01 2024-05-14 한국전자통신연구원 반도체 소자 및 이의 제조 방법
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Also Published As

Publication number Publication date
US8969720B2 (en) 2015-03-03
SG184088A1 (en) 2012-10-30
KR101761098B1 (ko) 2017-07-25
US20150179860A1 (en) 2015-06-25
WO2011115894A1 (en) 2011-09-22
US8993882B2 (en) 2015-03-31
EP2548217B1 (en) 2017-04-19
CN102893370A (zh) 2013-01-23
US20110226336A1 (en) 2011-09-22
KR20130016281A (ko) 2013-02-14
JP5956418B2 (ja) 2016-07-27
SG184087A1 (en) 2012-10-30
TW201139716A (en) 2011-11-16
WO2011115887A1 (en) 2011-09-22
BR112012023397A2 (pt) 2016-06-07
TWI510664B (zh) 2015-12-01
CN102893370B (zh) 2015-12-16
CN102893371A (zh) 2013-01-23
JP2013522159A (ja) 2013-06-13
JP2013522910A (ja) 2013-06-13
TW201201397A (en) 2012-01-01
US20110253219A1 (en) 2011-10-20
JP5837564B2 (ja) 2015-12-24
KR20130016283A (ko) 2013-02-14
CN102893371B (zh) 2016-09-28
EP2548218A1 (en) 2013-01-23
US9911887B2 (en) 2018-03-06
MX2012010733A (es) 2012-12-17
EP2548217A1 (en) 2013-01-23
US20170263797A1 (en) 2017-09-14
BR112012023255A2 (pt) 2016-05-17

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