[go: up one dir, main page]

MX2012010733A - Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales. - Google Patents

Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales.

Info

Publication number
MX2012010733A
MX2012010733A MX2012010733A MX2012010733A MX2012010733A MX 2012010733 A MX2012010733 A MX 2012010733A MX 2012010733 A MX2012010733 A MX 2012010733A MX 2012010733 A MX2012010733 A MX 2012010733A MX 2012010733 A MX2012010733 A MX 2012010733A
Authority
MX
Mexico
Prior art keywords
precursor
cigs
resulting
chalcogen
sub
Prior art date
Application number
MX2012010733A
Other languages
English (en)
Inventor
Robert T Nilsson
Jennifer E Gerbi
Marc G Langlois
Original Assignee
Dow Global Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies Llc filed Critical Dow Global Technologies Llc
Publication of MX2012010733A publication Critical patent/MX2012010733A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H10P14/203—
    • H10P14/22—
    • H10P14/3436—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)

Abstract

La presente invención proporciona estrategias para la elaboración de materiales foto-absorbentes CIGS de calidad alta a partir de películas precursoras que incorporan una cantidad sub-estequiométrica de calcógeno(s). El calcógeno(es) se incorpora en la película precursora de CIGS por medio de sub-crepitar con uno o más de otros constituyentes del precursor. El endurecimiento opcional también pude practicarse para convertir el precursor en una forma cristalina de calcopirita más deseable en el caso en que todo o una porción del precursor tenga otra constitución. Los precursores resultantes generalmente son sub-estequiométricos con respecto al calcógeno y tienen características electrónicas muy deficientes. La conversión de estos precursores en CIGS que foto-absorben material por medio del tratamiento de calcogenización ocurren con contenido de vacío interfacial dramáticamente reducido. El material CIGS resultante despliega excelente adhesión con otros estratos en los dispositivos fotovoltaicos resultantes. La migración de Ga también se reduce de manera dramática, y las películas resultantes tienen perfiles Ga optimizados en la porción superior o inferior de la película que mejoran la calidad de los dispositivos fotovoltaicos elaborados utilizando las películas.
MX2012010733A 2010-03-17 2011-03-14 Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales. MX2012010733A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31484010P 2010-03-17 2010-03-17
PCT/US2011/028324 WO2011115894A1 (en) 2010-03-17 2011-03-14 Chalcogenide-based materials and improved methods of making such materials

Publications (1)

Publication Number Publication Date
MX2012010733A true MX2012010733A (es) 2012-12-17

Family

ID=43975196

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2012010733A MX2012010733A (es) 2010-03-17 2011-03-14 Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales.
MX2012010732A MX2012010732A (es) 2010-03-17 2011-03-14 Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos.

Family Applications After (1)

Application Number Title Priority Date Filing Date
MX2012010732A MX2012010732A (es) 2010-03-17 2011-03-14 Estructuras de película delgada basadas en calcógeno fotoelectrónicamente activo que incorporan los estratos.

Country Status (10)

Country Link
US (4) US8969720B2 (es)
EP (2) EP2548217B1 (es)
JP (2) JP5837564B2 (es)
KR (2) KR101761098B1 (es)
CN (2) CN102893370B (es)
BR (2) BR112012023255A2 (es)
MX (2) MX2012010733A (es)
SG (2) SG184088A1 (es)
TW (2) TW201201397A (es)
WO (2) WO2011115894A1 (es)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170236710A1 (en) * 2007-09-05 2017-08-17 Ascent Solar Technologies, Inc. Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
WO2011150290A2 (en) * 2010-05-26 2011-12-01 The University Of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
JP4937379B2 (ja) * 2010-06-11 2012-05-23 昭和シェル石油株式会社 薄膜太陽電池
KR101504343B1 (ko) * 2010-10-15 2015-03-20 한국전자통신연구원 화합물 반도체 태양전지의 제조방법
ES2620286T3 (es) * 2011-03-21 2017-06-28 Sunlight Photonics Inc. Formación de películas finas en múltiples fases para dispositivos fotovoltaicos
US9018032B2 (en) * 2012-04-13 2015-04-28 Tsmc Solar Ltd. CIGS solar cell structure and method for fabricating the same
US8809674B2 (en) * 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
US8809109B2 (en) * 2012-05-21 2014-08-19 Stion Corporation Method and structure for eliminating edge peeling in thin-film photovoltaic absorber materials
US9177876B2 (en) * 2012-08-27 2015-11-03 Intermolecular, Inc. Optical absorbers
US20150263210A1 (en) * 2012-09-17 2015-09-17 Korea Institute Of Industrial Technology Cis/cgs/cigs thin-film manufacturing method and solar cell manufactured by using the same
US9112095B2 (en) 2012-12-14 2015-08-18 Intermolecular, Inc. CIGS absorber formed by co-sputtered indium
US9899561B2 (en) * 2012-12-20 2018-02-20 Bengbu Design & Research Institute For Glass Industry Method for producing a compound semiconductor, and thin-film solar cell
US9196768B2 (en) * 2013-03-15 2015-11-24 Jehad A. Abushama Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate
FR3006109B1 (fr) * 2013-05-24 2016-09-16 Commissariat Energie Atomique Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique.
WO2016013984A1 (en) * 2014-07-24 2016-01-28 Agency For Science, Technology And Research Process for depositing metal or metalloid chalcogenides
CN107406965A (zh) 2015-01-12 2017-11-28 纽升股份有限公司 可用于制造硫属化物半导体的含碱金属的前体膜的高速溅射沉积
US20160233322A1 (en) * 2015-02-06 2016-08-11 G-Force Nanotechnology Ltd. Method for fabricating chalcogenide films
JP2018523920A (ja) 2015-08-05 2018-08-23 ダウ グローバル テクノロジーズ エルエルシー カルコゲニド含有光電変換光吸収層を含む光電変換素子及び光電変換素子を形成する関連方法
JP7070946B2 (ja) * 2017-04-19 2022-05-18 中建材硝子新材料研究院集団有限公司 薄膜太陽電池用層構造を製造するための方法
CN108305906B (zh) * 2018-02-08 2019-09-03 北京铂阳顶荣光伏科技有限公司 太阳能电池吸收层的制备方法和太阳能电池的制备方法
CN108493768A (zh) * 2018-04-10 2018-09-04 中国科学院半导体研究所 脊型波导结构激光器p型电极的制备方法
CN110649121A (zh) * 2018-06-11 2020-01-03 北京铂阳顶荣光伏科技有限公司 一种太阳能电池吸收层及其制备方法、太阳能电池
KR102295733B1 (ko) * 2018-08-09 2021-08-31 한양대학교 에리카산학협력단 광전기화학 구조체 및 그 제조 방법, 그리고 광전기화학 소자.
KR102665745B1 (ko) * 2018-11-01 2024-05-14 한국전자통신연구원 반도체 소자 및 이의 제조 방법
KR102762460B1 (ko) * 2019-11-01 2025-02-03 인천대학교 산학협력단 스퍼터링 기반 황화 처리에 의한 cigs 광흡수층 표면 에너지 밴드갭 증가 방법

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3887650T2 (de) 1987-11-27 1994-08-04 Siemens Solar Ind Lp Herstellungsverfahren einer Dünnschichtsonnenzelle.
US5439575A (en) 1988-06-30 1995-08-08 Board Of Trustees Of The University Of Illinois Hybrid method for depositing semi-conductive materials
US4915745A (en) 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
US5028274A (en) 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
JP2719039B2 (ja) * 1990-09-21 1998-02-25 株式会社富士電機総合研究所 ＣｕＩｎＳｅ▲下２▼系化合物薄膜の形成方法
JPH05234894A (ja) * 1991-12-26 1993-09-10 Fuji Electric Co Ltd カルコパイライト型化合物薄膜の製造方法および製造装置
JPH07258881A (ja) * 1994-03-23 1995-10-09 Yazaki Corp ＣｕＩｎＳｅ２ 膜の製造方法
JPH07326577A (ja) * 1994-06-01 1995-12-12 Matsushita Electric Ind Co Ltd カルコパイライト構造半導体薄膜の製造方法
US5674555A (en) 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
CA2284826C (en) * 1997-04-21 2007-06-05 Davis, Joseph & Negley Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
US6323417B1 (en) 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
WO2001037324A1 (en) 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
EP1424735B1 (en) 2001-07-06 2010-07-28 Honda Giken Kogyo Kabushiki Kaisha Method for forming light-absorbing layer
AU2003275239A1 (en) 2002-09-30 2004-04-23 Miasole Manufacturing apparatus and method for large-scale production of thin-film solar cells
JP4365638B2 (ja) 2003-07-01 2009-11-18 住友ゴム工業株式会社 タイヤ用の束撚り金属コード、及びそれを用いた空気入りタイヤ
AP2180A (en) 2003-08-14 2010-11-29 Univ Johannesburg Group I-III-VI quaternary or higher alloy semiconductor films.
US7604843B1 (en) * 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
US7833821B2 (en) 2005-10-24 2010-11-16 Solopower, Inc. Method and apparatus for thin film solar cell manufacturing
US7632701B2 (en) 2006-05-08 2009-12-15 University Of Central Florida Research Foundation, Inc. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
US7867551B2 (en) 2006-09-21 2011-01-11 Solopower, Inc. Processing method for group IBIIIAVIA semiconductor layer growth
US20090050208A1 (en) 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
US20080105542A1 (en) 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
DE102006055662B3 (de) 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
DE102006057068B3 (de) 2006-11-29 2008-05-15 Hahn-Meitner-Institut Berlin Gmbh Reaktives Magnetron-Sputtern zur großflächigen Abscheidung von Chalkopyrit-Absorberschichten für Dünnschichtsolarzellen
US8197703B2 (en) 2007-04-25 2012-06-12 Solopower, Inc. Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage process
US20080289953A1 (en) 2007-05-22 2008-11-27 Miasole High rate sputtering apparatus and method
WO2009051862A2 (en) 2007-06-19 2009-04-23 Van Duren Jeroen K J Semiconductor thin films formed from non-spherical particles
US8258001B2 (en) 2007-10-26 2012-09-04 Solopower, Inc. Method and apparatus for forming copper indium gallium chalcogenide layers
US8779283B2 (en) * 2007-11-29 2014-07-15 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP2009231744A (ja) * 2008-03-25 2009-10-08 Showa Denko Kk Ｉ−ｉｉｉ−ｖｉ族カルコパイライト型薄膜系太陽電池およびその製造方法
WO2011040272A1 (ja) * 2009-09-29 2011-04-07 京セラ株式会社 光電変換装置
WO2011090728A2 (en) 2009-12-28 2011-07-28 David Jackrel Low cost solar cells formed using a chalcogenization rate modifier
WO2011108033A1 (ja) * 2010-03-05 2011-09-09 株式会社 東芝 化合物薄膜太陽電池及びその製造方法
CN101768729B (zh) * 2010-03-05 2012-10-31 中国科学院上海硅酸盐研究所 磁控溅射法制备铜铟镓硒薄膜太阳电池光吸收层的方法

Also Published As

Publication number Publication date
US8969720B2 (en) 2015-03-03
SG184088A1 (en) 2012-10-30
KR101761098B1 (ko) 2017-07-25
US20150179860A1 (en) 2015-06-25
WO2011115894A1 (en) 2011-09-22
US8993882B2 (en) 2015-03-31
EP2548217B1 (en) 2017-04-19
CN102893370A (zh) 2013-01-23
US20110226336A1 (en) 2011-09-22
KR20130016281A (ko) 2013-02-14
JP5956418B2 (ja) 2016-07-27
SG184087A1 (en) 2012-10-30
TW201139716A (en) 2011-11-16
WO2011115887A1 (en) 2011-09-22
BR112012023397A2 (pt) 2016-06-07
TWI510664B (zh) 2015-12-01
CN102893370B (zh) 2015-12-16
CN102893371A (zh) 2013-01-23
JP2013522159A (ja) 2013-06-13
JP2013522910A (ja) 2013-06-13
TW201201397A (en) 2012-01-01
US20110253219A1 (en) 2011-10-20
JP5837564B2 (ja) 2015-12-24
KR20130016283A (ko) 2013-02-14
MX2012010732A (es) 2013-04-03
CN102893371B (zh) 2016-09-28
EP2548218A1 (en) 2013-01-23
US9911887B2 (en) 2018-03-06
EP2548217A1 (en) 2013-01-23
US20170263797A1 (en) 2017-09-14
BR112012023255A2 (pt) 2016-05-17

Similar Documents

Publication Publication Date Title
MX2012010733A (es) Materiales con base de calcogenuro y métodos mejorados para elaborar dichos materiales.
WO2012094537A3 (en) Multi-nary group ib and via based semiconductor
GB2497909A (en) Diffusion barrier layer for thin film solar cell
WO2012011723A3 (en) Method of manufacturing high density cis thin film for solar cell and method of manufacturing thin film solar cell using the same
WO2012055860A3 (de) Transparente schichtverbunde
MY149756A (en) Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
WO2011028513A3 (en) Barrier films for thin-film photovoltaic cells
IL214311A0 (en) High efficiency group iii-v compound semiconductor solar cell with oxidized window layer
WO2012044729A3 (en) Microelectronic structures including cuprous oxide semiconductors and having improved p-n heterojunctions
WO2011017238A3 (en) Polymeric precursors for caigas aluminum-containing photovoltaics
MY183934A (en) Light emitting diode and fabrication method thereof
WO2012033879A3 (en) Photovoltaic devices with high work-function tco buffer layers and methods of manufacture
WO2011002516A9 (en) A self-imageable film forming polymer, compositions thereof and devices and structures made therefrom
WO2011103319A3 (en) Composition for facilitating envronmental degradation of a film
WO2013089872A3 (en) Band structure engineering for improved efficiency of cdte based photovoltaics
WO2012018822A3 (en) Gallium-containing transition metal thin film for cigs nucleation
TWI492408B (zh) 薄膜光伏元件的形成方法與ｃｉｇｓ太陽能電池結構
PL412250A1 (pl) Struktura ogniwa fotowoltaicznego oraz sposób wykonania struktury ogniwa fotowoltaicznego
WO2011123528A3 (en) Photovoltaic device barrier layer
EP2819149A4 (en) COMPOSITION FOR FORMING AN N-LEADING DIFFUSION LAYER, METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE WITH AN N-LEADING DIFFUSION LAYER, AND METHOD FOR PRODUCING A SOLAR CELL ELEMENT
KR101785771B1 (ko) Ｃｉｇｓ막의 제법 및 그것을 이용하는 ｃｉｇｓ 태양 전지의 제법
CN103620792B (zh) 太阳能电池及其制备方法
GB201012646D0 (en) II-III-V compound semiconductor
EP3041030A4 (en) Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, method for producing semiconductor substrate with n-type diffusion layer, and method for manufacturing solar cell element
JP2014036227A (ja) 太陽電池および太陽電池の製造方法

Legal Events

Date Code Title Description
FG Grant or registration