MX2010004731A - Dispositivos fotovoltaicos que incluyen peliculas semiconductoras impurificadas. - Google Patents
Dispositivos fotovoltaicos que incluyen peliculas semiconductoras impurificadas.Info
- Publication number
- MX2010004731A MX2010004731A MX2010004731A MX2010004731A MX2010004731A MX 2010004731 A MX2010004731 A MX 2010004731A MX 2010004731 A MX2010004731 A MX 2010004731A MX 2010004731 A MX2010004731 A MX 2010004731A MX 2010004731 A MX2010004731 A MX 2010004731A
- Authority
- MX
- Mexico
- Prior art keywords
- impurified
- devices including
- semiconductor films
- photovoltaic devices
- photovoltaic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
Abstract
La presente invención se refiere a una celda fotovoltaica que puede incluir un impurificador en contacto con una capa semiconductora.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98501907P | 2007-11-02 | 2007-11-02 | |
| PCT/US2008/081763 WO2009058985A1 (en) | 2007-11-02 | 2008-10-30 | Photovoltaic devices including doped semiconductor films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2010004731A true MX2010004731A (es) | 2010-05-21 |
Family
ID=40591459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2010004731A MX2010004731A (es) | 2007-11-02 | 2008-10-30 | Dispositivos fotovoltaicos que incluyen peliculas semiconductoras impurificadas. |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US9263608B2 (es) |
| EP (1) | EP2215662B1 (es) |
| KR (1) | KR101614554B1 (es) |
| CN (2) | CN105655430B (es) |
| IL (1) | IL205245A (es) |
| MX (1) | MX2010004731A (es) |
| MY (1) | MY169596A (es) |
| WO (1) | WO2009058985A1 (es) |
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| KR101614554B1 (ko) | 2007-11-02 | 2016-04-21 | 퍼스트 솔라, 인코포레이티드 | 도핑된 반도체 막을 포함하는 광기전 장치 |
| US8418418B2 (en) | 2009-04-29 | 2013-04-16 | 3Form, Inc. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
| WO2010132138A1 (en) * | 2009-05-12 | 2010-11-18 | First Solar, Inc. | Photovolaic device |
| KR20120052310A (ko) * | 2009-07-13 | 2012-05-23 | 퍼스트 솔라, 인코포레이티드 | 태양 전지 전면 컨택트 도핑 |
| US8748214B2 (en) * | 2009-12-16 | 2014-06-10 | First Solar, Inc. | Method of p-type doping of cadmium telluride |
| US20110265874A1 (en) * | 2010-04-29 | 2011-11-03 | Primestar Solar, Inc. | Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture |
| CN102893408B (zh) * | 2010-05-13 | 2016-05-11 | 第一太阳能有限公司 | 光伏器件导电层 |
| FR2961953B1 (fr) * | 2010-06-25 | 2012-07-13 | Saint Gobain | Cellule comprenant un matériau photovoltaïque a base de cadmium |
| US20120204939A1 (en) * | 2010-08-23 | 2012-08-16 | Stion Corporation | Structure and Method for High Efficiency CIS/CIGS-based Tandem Photovoltaic Module |
| CN103283031B (zh) * | 2010-09-22 | 2016-08-17 | 第一太阳能有限公司 | 包含n型掺杂剂源的光伏装置 |
| US8044477B1 (en) | 2010-09-30 | 2011-10-25 | General Electric Company | Photovoltaic device and method for making |
| GB201019039D0 (en) * | 2010-11-11 | 2010-12-22 | Univ Durham | Method for doping a semi-conductor material and method for manufacturing solar cells |
| WO2012118771A2 (en) * | 2011-02-28 | 2012-09-07 | Alliance For Sustainable Energy, Llc | Improved thin-film photovoltaic devices and methods of manufacture |
| US8350275B2 (en) * | 2011-04-01 | 2013-01-08 | Sabic Innovative Plastics Ip B.V. | Optoelectronic devices and coatings therefore |
| US8525191B2 (en) | 2011-04-01 | 2013-09-03 | Sabic Innovative Plastics Ip B.V. | Optoelectronic devices and coatings therefore |
| US9608144B2 (en) * | 2011-06-01 | 2017-03-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| WO2013077098A1 (ja) * | 2011-11-24 | 2013-05-30 | Jx日鉱日石金属株式会社 | 太陽電池用テルル化カドミウム粉末、太陽電池用テルル化カドミウム膜および太陽電池 |
| US9147582B2 (en) * | 2011-12-19 | 2015-09-29 | First Solar, Inc. | Manufacturing methods for semiconductor devices |
| CN104221165A (zh) * | 2012-01-17 | 2014-12-17 | 第一太阳能有限公司 | 具有吸收多层的光伏器件及制造该光伏器件的方法 |
| US9054245B2 (en) * | 2012-03-02 | 2015-06-09 | First Solar, Inc. | Doping an absorber layer of a photovoltaic device via diffusion from a window layer |
| US20130252798A1 (en) * | 2012-03-21 | 2013-09-26 | National Tsing Hua University | Metallic sulfide photocatalyst for carbon dioxide reduction and the preparation for the same |
| US9379259B2 (en) * | 2012-11-05 | 2016-06-28 | International Business Machines Corporation | Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices |
| US11876140B2 (en) | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
| US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
| CN110546769B (zh) | 2017-02-24 | 2023-12-05 | 第一阳光公司 | 经掺杂光伏半导体层及制造方法 |
| AU2018224308B2 (en) * | 2017-02-27 | 2019-11-14 | First Solar, Inc. | Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks |
| CN107611196A (zh) * | 2017-08-31 | 2018-01-19 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池及其制备方法 |
| EP3721479B1 (en) * | 2017-12-07 | 2022-02-16 | First Solar, Inc | Photovoltaic device with group v dopants and method for forming the same |
| JP7372250B2 (ja) * | 2018-02-01 | 2023-10-31 | ファースト・ソーラー・インコーポレーテッド | 光起電力素子における吸収体層の第v族ドーピングの方法 |
| CN119181734A (zh) * | 2018-10-24 | 2024-12-24 | 第一阳光公司 | 具有v族掺杂的光伏器件用缓冲层 |
| WO2020086646A1 (en) * | 2018-10-24 | 2020-04-30 | First Solar, Inc. | Buffer layers for photovoltaic devices with group v doping |
| EP3903352B1 (en) | 2018-12-27 | 2022-03-30 | First Solar, Inc. | Photovoltaic devices and methods of forming the same |
| KR102713057B1 (ko) | 2019-10-18 | 2024-10-02 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 접착 필름 |
| CN111682079B (zh) * | 2020-06-01 | 2021-12-14 | 大连理工大学 | 一种中/远红外透明导电材料体系及其制备导电薄膜的方法 |
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| US20050257824A1 (en) | 2004-05-24 | 2005-11-24 | Maltby Michael G | Photovoltaic cell including capping layer |
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| KR101614554B1 (ko) | 2007-11-02 | 2016-04-21 | 퍼스트 솔라, 인코포레이티드 | 도핑된 반도체 막을 포함하는 광기전 장치 |
| US8748214B2 (en) | 2009-12-16 | 2014-06-10 | First Solar, Inc. | Method of p-type doping of cadmium telluride |
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| US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| CN110546769B (zh) | 2017-02-24 | 2023-12-05 | 第一阳光公司 | 经掺杂光伏半导体层及制造方法 |
| AU2018224308B2 (en) | 2017-02-27 | 2019-11-14 | First Solar, Inc. | Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks |
| EP3721479B1 (en) | 2017-12-07 | 2022-02-16 | First Solar, Inc | Photovoltaic device with group v dopants and method for forming the same |
| JP7372250B2 (ja) | 2018-02-01 | 2023-10-31 | ファースト・ソーラー・インコーポレーテッド | 光起電力素子における吸収体層の第v族ドーピングの方法 |
-
2008
- 2008-10-30 KR KR1020107012117A patent/KR101614554B1/ko not_active Expired - Fee Related
- 2008-10-30 CN CN201610044784.7A patent/CN105655430B/zh active Active
- 2008-10-30 MY MYPI2010001949A patent/MY169596A/en unknown
- 2008-10-30 EP EP08845700.7A patent/EP2215662B1/en active Active
- 2008-10-30 MX MX2010004731A patent/MX2010004731A/es active IP Right Grant
- 2008-10-30 CN CN200880101459A patent/CN101790792A/zh active Pending
- 2008-10-30 WO PCT/US2008/081763 patent/WO2009058985A1/en not_active Ceased
- 2008-10-31 US US12/262,424 patent/US9263608B2/en active Active
-
2010
- 2010-04-22 IL IL205245A patent/IL205245A/en active IP Right Grant
-
2016
- 2016-01-13 US US14/994,830 patent/US10319873B2/en active Active
-
2019
- 2019-06-10 US US16/435,838 patent/US10861994B2/en active Active
-
2020
- 2020-12-04 US US17/111,843 patent/US11843070B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101614554B1 (ko) | 2016-04-21 |
| US20210091250A1 (en) | 2021-03-25 |
| KR20100094496A (ko) | 2010-08-26 |
| CN105655430B (zh) | 2019-06-07 |
| EP2215662A4 (en) | 2017-11-08 |
| CN105655430A (zh) | 2016-06-08 |
| CN101790792A (zh) | 2010-07-28 |
| WO2009058985A1 (en) | 2009-05-07 |
| US20190296180A1 (en) | 2019-09-26 |
| IL205245A0 (en) | 2010-12-30 |
| US20090194166A1 (en) | 2009-08-06 |
| IL205245A (en) | 2015-08-31 |
| US20160126398A1 (en) | 2016-05-05 |
| EP2215662B1 (en) | 2020-12-16 |
| US9263608B2 (en) | 2016-02-16 |
| US10861994B2 (en) | 2020-12-08 |
| EP2215662A1 (en) | 2010-08-11 |
| US10319873B2 (en) | 2019-06-11 |
| US11843070B2 (en) | 2023-12-12 |
| MY169596A (en) | 2019-04-22 |
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