MX2009004895A - Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno. - Google Patents
Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno.Info
- Publication number
- MX2009004895A MX2009004895A MX2009004895A MX2009004895A MX2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A MX 2009004895 A MX2009004895 A MX 2009004895A
- Authority
- MX
- Mexico
- Prior art keywords
- nitrogen
- metal contact
- include metal
- photovoltaic devices
- contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
Abstract
Una celda fotovoltaica puede incluir una capa metálica que contiene nitrógeno en contacto con una capa semiconductora.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86470906P | 2006-11-07 | 2006-11-07 | |
| US11/935,112 US9147778B2 (en) | 2006-11-07 | 2007-11-05 | Photovoltaic devices including nitrogen-containing metal contact |
| PCT/US2007/083758 WO2008058119A2 (en) | 2006-11-07 | 2007-11-06 | Photovoltaic devices including nitrogen-containing metal contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2009004895A true MX2009004895A (es) | 2009-05-19 |
Family
ID=39365307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2009004895A MX2009004895A (es) | 2006-11-07 | 2007-11-06 | Dispositivos fotovoltaicos que incluyen contacto metalico con nitrogeno. |
Country Status (5)
| Country | Link |
|---|---|
| US (4) | US9147778B2 (es) |
| EP (1) | EP2080229B1 (es) |
| MX (1) | MX2009004895A (es) |
| MY (1) | MY171673A (es) |
| WO (1) | WO2008058119A2 (es) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9147778B2 (en) | 2006-11-07 | 2015-09-29 | First Solar, Inc. | Photovoltaic devices including nitrogen-containing metal contact |
| KR101614554B1 (ko) | 2007-11-02 | 2016-04-21 | 퍼스트 솔라, 인코포레이티드 | 도핑된 반도체 막을 포함하는 광기전 장치 |
| WO2010068282A2 (en) * | 2008-12-10 | 2010-06-17 | The Regents Of The University Of California | Compositions and methods for synthesis of hydrogen fuel |
| US8418418B2 (en) | 2009-04-29 | 2013-04-16 | 3Form, Inc. | Architectural panels with organic photovoltaic interlayers and methods of forming the same |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| US20100307568A1 (en) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Metal barrier-doped metal contact layer |
| WO2010141463A1 (en) * | 2009-06-04 | 2010-12-09 | First Solar, Inc. | Dopant-containing contact material |
| JP5362016B2 (ja) * | 2009-09-04 | 2013-12-11 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
| WO2011057189A1 (en) * | 2009-11-08 | 2011-05-12 | First Solar, Inc. | Back contact deposition using water-doped gas mixtures |
| IN2012DN05898A (es) * | 2009-12-18 | 2015-09-18 | First Solar Inc | |
| WO2011123117A1 (en) * | 2010-03-31 | 2011-10-06 | University Of Rochester | Photovoltaic cells with improved electrical contact |
| US9461186B2 (en) | 2010-07-15 | 2016-10-04 | First Solar, Inc. | Back contact for a photovoltaic module |
| KR101846337B1 (ko) | 2011-11-09 | 2018-04-09 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| CN104081544B (zh) * | 2012-01-13 | 2019-01-22 | 应用材料公司 | 用于硅基光电装置的高功函数缓冲层 |
| US9698285B2 (en) | 2013-02-01 | 2017-07-04 | First Solar, Inc. | Photovoltaic device including a P-N junction and method of manufacturing |
| JP6611701B2 (ja) * | 2013-03-15 | 2019-11-27 | アーケマ・インコーポレイテッド | 窒素含有透明導電性酸化物キャップ層組成物 |
| US11876140B2 (en) | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
| CN104183663B (zh) | 2013-05-21 | 2017-04-12 | 第一太阳能马来西亚有限公司 | 光伏器件及其制备方法 |
| CN103290367B (zh) * | 2013-05-29 | 2015-02-11 | 哈尔滨工业大学 | 一种薄膜体声波谐振器下电极的制备方法 |
| US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| WO2015126918A1 (en) * | 2014-02-19 | 2015-08-27 | Lucintech, Inc. | Flexible solar cells and method of producing same |
| US10529883B2 (en) * | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
| AU2017343630B2 (en) | 2016-10-12 | 2021-08-05 | First Solar, Inc. | Photovoltaic device with transparent tunnel junction |
| EP3721479B1 (en) | 2017-12-07 | 2022-02-16 | First Solar, Inc | Photovoltaic device with group v dopants and method for forming the same |
| CN119181734A (zh) | 2018-10-24 | 2024-12-24 | 第一阳光公司 | 具有v族掺杂的光伏器件用缓冲层 |
| EP3903352B1 (en) | 2018-12-27 | 2022-03-30 | First Solar, Inc. | Photovoltaic devices and methods of forming the same |
| CN109830561B (zh) * | 2019-02-20 | 2021-09-03 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池组件及其制备方法 |
| US11257978B2 (en) * | 2019-03-29 | 2022-02-22 | Utica Leaseco, Llc | Front metal contact stack |
| EP4292143A1 (en) | 2021-02-12 | 2023-12-20 | First Solar, Inc. | Multilayer back contacts for perovskite photovoltaic devices |
| CN118281090B (zh) * | 2024-05-24 | 2024-10-11 | 通威太阳能(安徽)有限公司 | 太阳电池及其制备方法、生产设备 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BR7507192A (pt) * | 1974-11-08 | 1976-08-10 | Western Electric Co | Celula fotovoltaica e processo para sua fabricacao |
| US4064522A (en) * | 1976-02-04 | 1977-12-20 | Exxon Research & Engineering Co. | High efficiency selenium heterojunction solar cells |
| US4197141A (en) * | 1978-01-31 | 1980-04-08 | Massachusetts Institute Of Technology | Method for passivating imperfections in semiconductor materials |
| US4259122A (en) * | 1978-12-08 | 1981-03-31 | Exxon Research And Engineering Co. | Selenium photovoltaic device |
| US4387387A (en) * | 1979-08-13 | 1983-06-07 | Shunpei Yamazaki | PN Or PIN junction type semiconductor photoelectric conversion device |
| US4260428A (en) * | 1980-03-05 | 1981-04-07 | Ses, Incorporated | Photovoltaic cell |
| US4338482A (en) * | 1981-02-17 | 1982-07-06 | Roy G. Gordon | Photovoltaic cell |
| US4582764A (en) * | 1982-09-24 | 1986-04-15 | Energy Conversion Devices, Inc. | Selective absorber amorphous alloys and devices |
| US4485265A (en) * | 1982-11-22 | 1984-11-27 | President And Fellows Of Harvard College | Photovoltaic cell |
| JPS59147469A (ja) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | 非晶質シリコン太陽電池 |
| US4598306A (en) * | 1983-07-28 | 1986-07-01 | Energy Conversion Devices, Inc. | Barrier layer for photovoltaic devices |
| US4568792A (en) | 1984-02-02 | 1986-02-04 | Sri International | Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts |
| AU616736B2 (en) * | 1988-03-03 | 1991-11-07 | Asahi Glass Company Limited | Amorphous oxide film and article having such film thereon |
| US5136346A (en) * | 1990-09-07 | 1992-08-04 | Motorola, Inc. | Photon stimulated variable capacitance effect devices |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| US6541695B1 (en) * | 1992-09-21 | 2003-04-01 | Thomas Mowles | High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production |
| US5385848A (en) * | 1993-09-20 | 1995-01-31 | Iowa Thin Film Technologies, Inc | Method for fabricating an interconnected array of semiconductor devices |
| DE4333407C1 (de) * | 1993-09-30 | 1994-11-17 | Siemens Ag | Solarzelle mit einer Chalkopyritabsorberschicht |
| JPH1154773A (ja) * | 1997-08-01 | 1999-02-26 | Canon Inc | 光起電力素子及びその製造方法 |
| US6852614B1 (en) * | 2000-03-24 | 2005-02-08 | University Of Maine | Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen |
| FR2820241B1 (fr) * | 2001-01-31 | 2003-09-19 | Saint Gobain | Substrat transparent muni d'une electrode |
| JP4560245B2 (ja) * | 2001-06-29 | 2010-10-13 | キヤノン株式会社 | 光起電力素子 |
| EP1535340A1 (en) * | 2002-07-16 | 2005-06-01 | STMicroelectronics N.V. | Tfa image sensor with stability-optimized photodiode |
| AU2003275239A1 (en) * | 2002-09-30 | 2004-04-23 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
| US7141863B1 (en) * | 2002-11-27 | 2006-11-28 | University Of Toledo | Method of making diode structures |
| US7123638B2 (en) * | 2003-10-17 | 2006-10-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant |
| US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
| SE0400631D0 (sv) * | 2004-03-11 | 2004-03-11 | Forskarpatent I Uppsala Ab | Thin film solar cell and manufacturing method |
| KR101115484B1 (ko) * | 2004-03-15 | 2012-02-27 | 솔로파워, 인코포레이티드 | 태양 전지 제작용 반도체 박층의 증착을 위한 기술 및 장치 |
| US7405143B2 (en) * | 2004-03-25 | 2008-07-29 | Asm International N.V. | Method for fabricating a seed layer |
| US20050257824A1 (en) * | 2004-05-24 | 2005-11-24 | Maltby Michael G | Photovoltaic cell including capping layer |
| US7288332B2 (en) * | 2005-10-06 | 2007-10-30 | Los Almos National Security, Llc | Conductive layer for biaxially oriented semiconductor film growth |
| US8373060B2 (en) | 2006-10-24 | 2013-02-12 | Zetta Research and Development LLC—AQT Series | Semiconductor grain microstructures for photovoltaic cells |
| US9147778B2 (en) | 2006-11-07 | 2015-09-29 | First Solar, Inc. | Photovoltaic devices including nitrogen-containing metal contact |
-
2007
- 2007-11-05 US US11/935,112 patent/US9147778B2/en active Active
- 2007-11-06 MY MYPI20091849A patent/MY171673A/en unknown
- 2007-11-06 WO PCT/US2007/083758 patent/WO2008058119A2/en not_active Ceased
- 2007-11-06 MX MX2009004895A patent/MX2009004895A/es active IP Right Grant
- 2007-11-06 EP EP07844909.7A patent/EP2080229B1/en active Active
-
2015
- 2015-09-08 US US14/847,738 patent/US20150380601A1/en not_active Abandoned
-
2019
- 2019-01-11 US US16/245,613 patent/US11695085B2/en active Active
-
2023
- 2023-06-06 US US18/206,430 patent/US20230317864A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2080229B1 (en) | 2017-10-11 |
| EP2080229A4 (en) | 2016-04-13 |
| US20190148571A1 (en) | 2019-05-16 |
| US20150380601A1 (en) | 2015-12-31 |
| US20080110498A1 (en) | 2008-05-15 |
| WO2008058119A3 (en) | 2008-08-21 |
| EP2080229A2 (en) | 2009-07-22 |
| US9147778B2 (en) | 2015-09-29 |
| US11695085B2 (en) | 2023-07-04 |
| US20230317864A1 (en) | 2023-10-05 |
| MY171673A (en) | 2019-10-23 |
| WO2008058119A2 (en) | 2008-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| HH | Correction or change in general | ||
| FG | Grant or registration |