[go: up one dir, main page]

GB201019039D0 - Method for doping a semi-conductor material and method for manufacturing solar cells - Google Patents

Method for doping a semi-conductor material and method for manufacturing solar cells

Info

Publication number
GB201019039D0
GB201019039D0 GBGB1019039.5A GB201019039A GB201019039D0 GB 201019039 D0 GB201019039 D0 GB 201019039D0 GB 201019039 A GB201019039 A GB 201019039A GB 201019039 D0 GB201019039 D0 GB 201019039D0
Authority
GB
United Kingdom
Prior art keywords
solar cells
doping
semi
conductor material
manufacturing solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1019039.5A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Durham
Original Assignee
University of Durham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Durham filed Critical University of Durham
Priority to GBGB1019039.5A priority Critical patent/GB201019039D0/en
Publication of GB201019039D0 publication Critical patent/GB201019039D0/en
Priority to PCT/GB2011/052199 priority patent/WO2012063078A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A method for introducing a dopant into a semiconductor material comprising at least two elements is described. The method includes providing a layer (15) comprising the semiconductor material and exposing a surface of the layer to a diffusion source comprising the dopant. The method further includes controlling the stoichiometry of the elements in the surface, prior to the step of exposing the surface to the diffusion source. The method may be applied to the manufacture of solar cells (10), in particular cadmium telluride (CdTe) solar cells, in which the CdTe layer (15) is typically doped with a chlorine species.
GBGB1019039.5A 2010-11-11 2010-11-11 Method for doping a semi-conductor material and method for manufacturing solar cells Ceased GB201019039D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB1019039.5A GB201019039D0 (en) 2010-11-11 2010-11-11 Method for doping a semi-conductor material and method for manufacturing solar cells
PCT/GB2011/052199 WO2012063078A1 (en) 2010-11-11 2011-11-11 Method for doping a semiconductor material and method for manufacturing solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1019039.5A GB201019039D0 (en) 2010-11-11 2010-11-11 Method for doping a semi-conductor material and method for manufacturing solar cells

Publications (1)

Publication Number Publication Date
GB201019039D0 true GB201019039D0 (en) 2010-12-22

Family

ID=43414689

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1019039.5A Ceased GB201019039D0 (en) 2010-11-11 2010-11-11 Method for doping a semi-conductor material and method for manufacturing solar cells

Country Status (2)

Country Link
GB (1) GB201019039D0 (en)
WO (1) WO2012063078A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116154033A (en) * 2021-11-23 2023-05-23 中国建材国际工程集团有限公司 Method for activating absorption layer of thin film solar cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388483A (en) 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
KR101614554B1 (en) * 2007-11-02 2016-04-21 퍼스트 솔라, 인코포레이티드 Photovoltaic devices including doped semiconductor films

Also Published As

Publication number Publication date
WO2012063078A1 (en) 2012-05-18

Similar Documents

Publication Publication Date Title
PH12016501052A1 (en) Solar cell emitter region fabrication using ion implantation
WO2011109058A3 (en) Method of fabricating a back-contact solar cell and device thereof
WO2009037955A1 (en) Method for manufacturing solar cell
WO2011087341A3 (en) Method for fabricating a back contact solar cell
PH12016502161A1 (en) Solar cell emitter region fabrication using ion implantation
MY172033A (en) Ion implantation of dopants for forming spatially located diffusion regions of solar cells
MY169596A (en) Photovoltaic devices including doped semiconductor films
MY156090A (en) Back junction solar cell with selective front surface field
GB2484605A (en) Silicon wafer based structure for heterostructure solar cells
MY177509A (en) Trench process and structure for backside contact solar cells with polysilicon doped regions
WO2010093177A3 (en) Solar cell and method for manufacturing the same
PH12016501667A1 (en) Solar cell with trench-free emitter regions
AU2012300694A8 (en) Photovoltaic device
EP2073276A3 (en) Exponentially doped layers in inverted metamorphic multijunction sloar cells
FR2967294B1 (en) METHOD FOR FORMING A MULTILAYER STRUCTURE
SG178877A1 (en) Solar cell and method for manufacturing such a solar cell
WO2011110869A3 (en) Photosensitive solid state heterojunction device
WO2010000716A3 (en) Heterojunction solar cell with absorber having an integrated doping profile
PH12016501055B1 (en) Solar cell emitter region fabrication using self-aligned implant and cap
GB2495166A (en) Single-junction photovoltaic cell
WO2008069675A3 (en) Multicrystalline silicon solar cells
GB201211759D0 (en) Method for fabricating a rear contact heterojunction intrinsic thin layer silicon solar cell with only two masking steps and respective solar cell
WO2013141700A3 (en) Method for manufacturing a solar cell
WO2009075257A1 (en) Silicon substrate and method for manufacturing the same
AU2013364372A8 (en) Solar cell emitter region fabrication using N-type doped silicon nano-particles

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)