WO2024210041A1 - 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法 - Google Patents
感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法 Download PDFInfo
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- WO2024210041A1 WO2024210041A1 PCT/JP2024/012863 JP2024012863W WO2024210041A1 WO 2024210041 A1 WO2024210041 A1 WO 2024210041A1 JP 2024012863 W JP2024012863 W JP 2024012863W WO 2024210041 A1 WO2024210041 A1 WO 2024210041A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F267/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated polycarboxylic acids or derivatives thereof as defined in group C08F22/00
- C08F267/06—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated polycarboxylic acids or derivatives thereof as defined in group C08F22/00 on to polymers of esters
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
Definitions
- This disclosure relates to a photosensitive resin composition, a photosensitive element, a method for forming a resist pattern, and a method for manufacturing a wiring board.
- photosensitive resin compositions and photosensitive elements comprising a layer formed on a support using the photosensitive resin composition (hereinafter also referred to as a "photosensitive layer”) are widely used as resist materials used in etching or plating processes.
- the wiring board is manufactured, for example, by the following procedure. First, the photosensitive layer of the photosensitive element is laminated onto the circuit-forming substrate (photosensitive layer formation process). Next, a predetermined portion of the photosensitive layer is exposed to light to form a photocured portion (exposure process). At this time, the support is peeled off before or after exposure. Thereafter, the area of the photosensitive layer other than the photocured portion is removed from the substrate, and a resist pattern, which is a cured product of the photosensitive resin composition, is formed on the substrate (development process). Next, the obtained resist pattern is used as a resist and subjected to etching or plating to form a conductor pattern on the substrate (circuit formation process), and finally the resist is peeled off and removed (peeling process).
- a conventional exposure method is to use a mercury lamp as the light source and expose through a photomask.
- a direct imaging exposure method called LDI Laser Direct Imaging
- LDI Laser Direct Imaging
- This direct imaging exposure method has better alignment accuracy than exposure methods that use a photomask, and can produce highly detailed patterns, so it is being introduced for the production of high-density packaging boards.
- Patent Document 1 discloses a photosensitive resin composition that uses a specific photosensitizer to provide excellent sensitivity and resolution.
- Patent Document 2 discloses a photosensitive resin composition that uses a specific alkali-soluble polymer and a compound having an ethylenic double bond to provide excellent sensitivity and resolution.
- photosensitive resin compositions that can be used in thick film applications (e.g., forming resist patterns with a thickness of 29 ⁇ m or more) to form copper pillars that connect, for example, IC chips and wiring boards for semiconductor packages.
- thick film applications e.g., forming resist patterns with a thickness of 29 ⁇ m or more
- the thicker the photosensitive layer formed using the photosensitive resin composition the more difficult it is to uniformly harden it all the way to the bottom, which can make it difficult to obtain sufficient resolution and adhesion.
- the thicker the resist pattern formed the longer it takes for the stripping solution to penetrate, which can result in a longer stripping time.
- Conventional photosensitive resin compositions have room for further improvement in sensitivity, resolution, adhesion, and stripping ability.
- the present disclosure aims to provide a photosensitive layer resin composition that is excellent in sensitivity, resolution, adhesion, and peelability, as well as a photosensitive element, a method for forming a resist pattern, and a method for manufacturing a wiring board that use the same.
- the present disclosure provides the following photosensitive resin composition, photosensitive element, method for forming a resist pattern, and method for producing a wiring board.
- a photosensitive resin composition comprising a binder polymer, a photopolymerizable compound, a photopolymerization initiator, and a sensitizer, wherein the photopolymerization initiator contains a hexaarylbiimidazole compound and an N-phenylglycine compound, and the sensitizer contains an anthracene compound.
- the content of the polyalkylene glycol di(meth)acrylate is 8% by mass or more and 30% by mass or less based on the total amount of the photopolymerizable compound.
- a photosensitive element comprising a support and a photosensitive layer formed on the support using the photosensitive resin composition according to any one of [1] to [5] above.
- a method for forming a resist pattern comprising the steps of: forming a photosensitive layer on a substrate using the photosensitive resin composition according to any one of [1] to [5] above, or the photosensitive element according to [6] or [7] above; photocuring a portion of the photosensitive layer; and removing an uncured portion of the photosensitive layer.
- a method for producing a wiring board comprising the step of etching or plating a substrate on which a resist pattern has been formed by the method for forming a resist pattern according to [8] above, to form a conductor pattern.
- the present disclosure provides a photosensitive layer resin composition that is excellent in sensitivity, resolution, adhesion, and peelability, as well as a photosensitive element, a method for forming a resist pattern, and a method for manufacturing a wiring board that use the same.
- FIG. 1 is a schematic cross-sectional view illustrating a photosensitive element according to one embodiment.
- 5A to 5C are schematic cross-sectional views showing a method for manufacturing a wiring board according to an embodiment of the present invention.
- process refers not only to an independent process, but also to a process that cannot be clearly distinguished from other processes, as long as the intended effect of the process is achieved.
- a numerical range indicated using “ ⁇ ” indicates a range that includes the numerical values before and after " ⁇ ” as the minimum and maximum values, respectively.
- layer includes a structure that is formed over the entire surface, as well as a structure that is formed on a portion of the surface, when observed in a plan view.
- (Meth)acrylic acid means at least one of "acrylic acid” and the corresponding "methacrylic acid”. The same applies to other similar expressions such as (meth)acrylate.
- (poly)oxyethylene group means an oxyethylene group or a polyoxyethylene group in which two or more ethylene groups are linked by ether bonds.
- (poly)oxypropylene group means an oxypropylene group or a polyoxypropylene group in which two or more propylene groups are linked by ether bonds.
- EO-modified means a compound having a (poly)oxyethylene group.
- PO-modified means a compound having a (poly)oxypropylene group.
- EO/PO-modified means a compound having a (poly)oxyethylene group and/or a (poly)oxypropylene group.
- the amount of each component in the composition means the total amount of the multiple substances present in the composition when the composition contains multiple substances corresponding to each component, unless otherwise specified.
- solid content refers to the non-volatile content of the photosensitive resin composition excluding volatile substances.
- solid content refers to components other than the solvent that do not volatilize and remain when the photosensitive resin composition is dried, as described below, and includes those that are liquid, syrup-like, or waxy at room temperature (25°C).
- the photosensitive resin composition according to the present embodiment includes a binder polymer (hereinafter also referred to as “component (A)”), a photopolymerizable compound (hereinafter also referred to as “component (B)”), and a photopolymerization initiator. (hereinafter also referred to as “component (C)”) and a sensitizer (hereinafter also referred to as “component (D)”).
- component (C) is a hexaarylbiimidazole compound and N-phenylglycine.
- the photosensitive resin composition according to the present embodiment includes a specific photopolymerization initiator and a specific sensitizer in combination, and the ....
- the composition is excellent in terms of resolution, adhesion and peelability, and can be suitably used in direct imaging exposure methods and thick film applications. Each component will be described below.
- Component (A) Binder Polymer
- the photosensitive resin composition contains one or more types of component (A).
- component (A) include acrylic resins, styrene resins, epoxy resins, amide resins, amide-epoxy resins, alkyd resins, and phenol resins.
- Component (A) may contain an acrylic resin from the viewpoint of alkaline developability.
- the acrylic resin is a resin having a structural unit (monomer unit) derived from a (meth)acryloyl group-containing compound.
- the (meth)acryloyl group-containing compound is a compound that contains a (meth)acryloyl group.
- examples of the (meth)acryloyl group-containing compound include hydroxyalkyl (meth)acrylate, (meth)acrylic acid, (meth)acrylic acid alkyl ester, (meth)acrylic acid aryl ester, (meth)acrylic acid cycloalkyl ester, acrylamide such as diacetone acrylamide, (meth)acrylic acid tetrahydrofurfuryl ester, (meth)acrylic acid dimethylaminoethyl ester, (meth)acrylic acid diethylaminoethyl ester, (meth)acrylic acid glycidyl ester, 2,2,2-trifluoroethyl (meth)acrylate, 2,2,3,3-tetrafluoropropyl (meth)acrylate, ⁇ -bromoacrylic acid, ⁇ -chloroacryl
- the acrylic resin may be, for example, a polymer (a) having at least one unit selected from the group consisting of hydroxyalkyl (meth)acrylate units, (meth)acrylic acid units, (meth)acrylic acid alkyl ester units, and (meth)acrylic acid aryl ester units.
- the hydroxyalkyl (meth)acrylate unit is a structural unit derived from a hydroxyalkyl (meth)acrylate.
- hydroxyalkyl (meth)acrylates include hydroxymethyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, hydroxybutyl (meth)acrylate, hydroxypentyl (meth)acrylate, and hydroxyhexyl (meth)acrylate.
- the hydroxyalkyl (meth)acrylate unit when the number of carbon atoms in the alkyl portion is 3 or more, it may have a branched structure.
- the content of the hydroxyalkyl (meth)acrylate units may be 0.5% by mass or more, 0.75% by mass or more, or 1.0% by mass or more based on the total amount of monomer units constituting polymer (a) from the viewpoint of dispersibility, and may be 20% by mass or less, 15% by mass or less, or 8% by mass or less from the viewpoint of water absorbency.
- the (meth)acrylic acid unit is a structural unit derived from (meth)acrylic acid.
- the content of the (meth)acrylic acid unit may be 1 mass% or more, 5 mass% or more, 10 mass% or more, 15 mass% or more, 20 mass% or more, or 25 mass% or more, based on the total amount of monomer units constituting polymer (a), from the viewpoint of resolution and adhesion, and may be 50 mass% or less, 45 mass% or less, 40 mass% or less, 35 mass% or less, or 30 mass% or less.
- the (meth)acrylic acid alkyl ester unit is a structural unit derived from a (meth)acrylic acid alkyl ester.
- the alkyl group of the (meth)acrylic acid alkyl ester may be, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, a undecyl group, a dodecyl group, or a structural isomer thereof, and from the viewpoint of peelability, may be an alkyl group having 1 to 4 carbon atoms.
- the content of the (meth)acrylic acid alkyl ester units may be 1 mass % or more, 2 mass % or more, 3 mass % or more, or 4 mass % or more based on the total amount of monomer units constituting polymer (a) from the viewpoint of peelability, and may be 50 mass % or less, 30 mass % or less, 10 mass % or less, 8 mass % or less, or 6 mass % or less from the viewpoint of resolution and adhesion.
- the (meth)acrylic acid aryl ester unit is a structural unit derived from an (meth)acrylic acid aryl ester.
- Examples of the (meth)acrylic acid aryl ester include benzyl (meth)acrylate, phenyl (meth)acrylate, and naphthyl (meth)acrylate.
- the content of the (meth)acrylic acid aryl ester unit may be 1 mass% or more, 5 mass% or more, 10 mass% or more, 15 mass% or more, or 20 mass% or more, based on the total amount of the monomer units constituting the polymer (a), from the viewpoint of resolution and adhesion, and may be 50 mass% or less, 45 mass% or less, 40 mass% or less, 35 mass% or less, 30 mass% or less, or 25 mass% or less.
- Polymer (a) may further have structural units derived from other monomers other than the (meth)acryloyl group-containing compound.
- the other monomers may be one type or two or more types.
- styrene or styrene derivatives include, for example, styrene or styrene derivatives, acrylonitrile, vinyl alcohol ethers such as vinyl n-butyl ether, maleic acid, maleic anhydride, maleic acid monoesters such as monomethyl maleate, monoethyl maleate, and monoisopropyl maleate, fumaric acid, cinnamic acid, ⁇ -cyanocinnamic acid, itaconic acid, crotonic acid, and propiolic acid.
- styrene derivatives include vinyl toluene and ⁇ -methyl styrene.
- polymer (a) has structural units derived from styrene or a styrene derivative (hereinafter also referred to as "styrene or styrene derivative units")
- the content of the styrene or styrene derivative units may be 40% by mass or more or 45% by mass or more based on the total amount of monomer units constituting polymer (a) from the viewpoint of resolution, and may be 90% by mass or less, 85% by mass or less, or 80% by mass or less from the viewpoint of developability.
- Component (A) may contain a binder polymer other than polymer (a), or may consist of only polymer (a). From the viewpoints of adhesion and resolution, the content of polymer (a) in component (A) may be 50 to 100% by mass, or 80 to 100% by mass, based on the total amount of component (A).
- the acid value of polymer (a) may be 100 mgKOH/g or more, 120 mgKOH/g or more, 140 mgKOH/g or more, or 150 mgKOH/g or more from the viewpoint of developability, and may be 250 mgKOH/g or less, 240 mgKOH/g or less, or 230 mgKOH/g or less from the viewpoint of adhesion (resistance to developing solution) of the cured product of the photosensitive resin composition.
- the acid value of polymer (a) can be adjusted by the content of structural units (e.g., (meth)acrylic acid units) constituting polymer (a).
- component (A) contains a binder polymer other than polymer (a)
- the acid value of the other binder polymer may also be within the above range.
- the weight average molecular weight (Mw) of the polymer (a) may be 10,000 or more, 15,000 or more, 20,000 or more, 25,000 or more, 30,000 or more, 35,000 or more, or 40,000 or more from the viewpoint of adhesion (resistance to developing solution) of the cured product of the photosensitive resin composition and ease of forming a thick-film resist pattern, and may be 100,000 or less, 80,000 or less, 60,000 or less, or 50,000 or less from the viewpoint of developability.
- the dispersity (Mw/Mn) of the polymer (a) may be, for example, 1.0 or more or 1.5 or more, and may be 3.0 or less or 2.5 or less from the viewpoint of adhesion and resolution.
- the Mw of the other binder polymer may also be within the above range.
- the weight average molecular weight and dispersity can be measured, for example, by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene. More specifically, they can be measured under the conditions described in the Examples. For compounds with low molecular weights, if it is difficult to measure the weight average molecular weight using the above-mentioned method, the molecular weight can be measured using another method and the average calculated.
- GPC gel permeation chromatography
- the content of component (A) may be 20% by mass or more, 30% by mass or more, or 40% by mass or more from the viewpoint of film formability, based on the total solid content of the photosensitive resin composition, and may be 90% by mass or less, 80% by mass or less, 70% by mass or less, or 65% by mass or less from the viewpoint of sensitivity and resolution.
- the content of the (A) component, relative to 100 parts by mass of the total amount of the (A) component and the (B) component, may be 30 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, or 55 parts by mass or more from the viewpoint of film formability, and may be 70 parts by mass or less, 65 parts by mass or less, or 60 parts by mass or less from the viewpoint of sensitivity and resolution.
- Component (B) Photopolymerizable Compound
- the photosensitive resin composition contains one or more components (B).
- the component (B) may be any compound that is polymerizable by light, and may be, for example, a compound having an ethylenically unsaturated bond.
- component (B) may contain a bisphenol A type (meth)acrylate compound (hereinafter also referred to as "component (b1)").
- component (b1) include 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolypropoxy)phenyl)propane, 2,2-bis(4-((meth)acryloxypolybutoxy)phenyl)propane, and 2,2-bis(4-((meth)acryloxypolyethoxypolypropoxy)phenyl)propane.
- component (B) may contain 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane.
- 2,2-bis(4-((meth)acryloxypolyethoxy)phenyl)propane examples include (2,2-bis(4-((meth)acryloxypentaethoxy)phenyl)propane.
- a compound having 10 or more oxyethylene groups may be used, or a compound having less than 10 oxyethylene groups may be used, or a compound having 10 or more oxyethylene groups may be used in combination with a compound having less than 10 oxyethylene groups.
- the content of the (b1) component may be 50 mass% or more, 60 mass% or more, 70 mass% or more, 80 mass% or more, or 90 mass% or more based on the total amount of the (B) component.
- the (B) component may consist of only the (b1) component.
- the (B) component may contain a polyalkylene glycol di(meth)acrylate compound (hereinafter also referred to as "(b2) component"; excluding the above-mentioned (b1) component) from the viewpoints of developability, resolution, adhesion, and peelability.
- (b2) component examples include polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, and EO-modified polypropylene glycol di(meth)acrylate.
- the (b2) component may contain EO-modified polypropylene glycol di(meth)acrylate.
- the content of the (b2) component may be 8% by mass or more, 10% by mass or more, 12% by mass or more, 14% by mass or more, 16% by mass or more, 18% by mass or more, 20% by mass or more, or 22% by mass or more, based on the total amount of the (B) component.
- the content of the (b2) component may be 8% by mass or more, 10% by mass or more, 12% by mass or more, 14% by mass or more, 16% by mass or more, or 18% by mass or more, based on the total amount of the (B) component, and may be 30% by mass or less, 28% by mass or less, 26% by mass or less, 24% by mass or less, 22% by mass or less, 20% by mass or less, or 19% by mass or less.
- the content of the (b2) component may be 8% to 30% by mass, based on the total amount of the (B) component.
- the (B) component may contain a compound having three or more (meth)acryloyl groups (hereinafter also referred to as the "(b3)" component, excluding the above-mentioned (b1) and (b2) components).
- Examples of the (b3) component include trimethylolpropane tri(meth)acrylate, EO-modified trimethylolpropane tri(meth)acrylate, PO-modified trimethylolpropane tri(meth)acrylate, EO-PO-modified trimethylolpropane tri(meth)acrylate, EO-modified pentaerythritol tetra(meth)acrylate, EO-modified ditrimethylolpropane tetra(meth)acrylate, EO-modified dipentaerythritol hexa(meth)acrylate, tetramethylolmethane tri(meth)acrylate, and tetramethylolmethane tetra(meth)acrylate.
- the (b3) component may contain EO-modified trimethylolpropane tri(meth)acrylate.
- the content of the (b3) component may be 5% by mass or more, 10% by mass or more, or 15% by mass or more, and may be 25% by mass or less, 20% by mass or less, or 18% by mass or less, based on the total amount of the (B) component.
- the (B) component may contain a (meth)acrylate compound having an alicyclic structure (hereinafter also referred to as "(b4) component"; excluding the above-mentioned (b1), (b2) and (b3) components).
- (b4) component examples include cyclohexyl (meth)acrylate, isobornyl (meth)acrylate, adamantyl (meth)acrylate, cyclopentanyl (meth)acrylate and dicyclopentanyl (meth)acrylate.
- the (b4) component may contain dicyclopentanyl (meth)acrylate.
- the content of the (b4) component may be 1% by mass or more, 2% by mass or more, 3% by mass or more, 5% by mass or more or 6% by mass or more, and may be 15% by mass or less, 10% by mass or less or 8% by mass or less, based on the total amount of the (B) component.
- the (B) component may be used in combination with at least one of the (b2) and (b3) components and the (b4) component. From the viewpoint of superior peelability, the (B) component may be used in combination with the (b2) and (b4) components. From the viewpoint of superior sensitivity, developability and adhesion, the (B) component may be used in combination with the (b3) and (b4) components.
- the mass ratio of (b2)/(b4) may be 1.5 or more, 2.0 or more, or 2.2 or more.
- the mass ratio of (b3)/(b4) may be 1.5 or more, 2.0 or more, or 2.2 or more.
- the photosensitive resin composition may contain, as component (B), a photopolymerizable compound other than the above-mentioned components (b1) to (b4).
- photopolymerizable compounds include, for example, urethane monomers, nonylphenoxy polyethyleneoxy acrylates, phthalic acid compounds, (meth)acrylic acid alkyl esters, and photopolymerizable compounds having at least one cationic polymerizable cyclic ether group in the molecule (such as oxetane compounds).
- the other photopolymerizable compounds may be at least one selected from the group consisting of urethane monomers, nonylphenoxy polyethyleneoxy acrylates, and phthalic acid compounds.
- nonylphenoxy polyethyleneoxyacrylates include nonylphenoxy triethyleneoxyacrylate, nonylphenoxy tetraethyleneoxyacrylate, nonylphenoxy pentaethyleneoxyacrylate, nonylphenoxy hexaethyleneoxyacrylate, nonylphenoxy heptaethyleneoxyacrylate, nonylphenoxy octaethyleneoxyacrylate, nonylphenoxy nonaethyleneoxyacrylate, nonylphenoxy decaethyleneoxyacrylate, and nonylphenoxy undecaethyleneoxyacrylate.
- phthalic acid compounds include gamma-chloro-beta-hydroxypropyl-beta'-(meth)acryloyloxyethyl-o-phthalate (also known as 3-chloro-2-hydroxypropyl-2-(meth)acryloyloxyethyl phthalate), beta-hydroxyethyl-beta'-(meth)acryloyloxyethyl-o-phthalate, and beta-hydroxypropyl-beta'-(meth)acryloyloxyethyl-o-phthalate.
- gamma-chloro-beta-hydroxypropyl-beta'-(meth)acryloyloxyethyl-o-phthalate also known as 3-chloro-2-hydroxypropyl-2-(meth)acryloyloxyethyl phthalate
- beta-hydroxyethyl-beta'-(meth)acryloyloxyethyl-o-phthalate beta-hydroxy
- component (B) contains other photopolymerizable compounds
- the content of the other photopolymerizable compounds may be 1% by mass or more, 3% by mass or more, or 5% by mass or more, and may be 25% by mass or less, 15% by mass or less, or 10% by mass or less, based on the total amount of component (B), from the viewpoints of resolution, adhesion, resist shape, and peelability.
- component (B) may include, among the above-mentioned compounds, a compound having a total of 2 to 40 oxyethylene groups (EO groups) and/or oxypropylene groups (PO groups) in the molecule. From the viewpoints of adhesion and resolution, the total number of EO groups and/or PO groups may be 2 to 40 or 2 to 30.
- EO groups oxyethylene groups
- PO groups oxypropylene groups
- the content of component (B) may be 3% by mass or more, 10% by mass or more, or 25% by mass or more from the viewpoint of sensitivity and resolution, based on the total solid content of the photosensitive resin composition, and may be 70% by mass or less, 60% by mass or less, or 50% by mass or less from the viewpoint of film formability.
- the photosensitive resin composition contains one or more of the components (C).
- the component (C) contains a hexaarylbiimidazole compound and an N-phenylglycine compound.
- a hexaarylbiimidazole compound is used as the component (C)
- the photosensitive resin composition can obtain good resolution and resist pattern formability, but the sensitivity may be reduced.
- the present inventors have found that by using a hexaarylbiimidazole compound in combination with an N-phenylglycine compound, the composition can have excellent resolution, and can also improve sensitivity, adhesion, and peelability.
- the hexaarylbiimidazole compound may be a 2,4,5-triarylimidazole dimer from the viewpoints of sensitivity, resolution, adhesion and peelability.
- 2,4,5-triarylimidazole dimers include 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-bis-(m-methoxyphenyl)imidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer.
- the content of the hexaarylbiimidazole compound may be 0.1 parts by mass or more, 0.5 parts by mass or more, 1.0 parts by mass or more, 3.0 parts by mass or more, 4.0 parts by mass or more, or 4.5 parts by mass or more, and may be 10 parts by mass or less, 9 parts by mass or less, 8 parts by mass or less, 7 parts by mass or less, or 6 parts by mass or less, relative to 100 parts by mass of the total amount of the (A) component and the (B) component, from the viewpoints of sensitivity, resolution, adhesion, and peelability.
- N-phenylglycine compounds include, for example, N-phenylglycine, N-methyl-N-phenylglycine, and N-ethyl-N-phenylglycine. From the viewpoints of sensitivity, resolution, adhesion, and peelability, the N-phenylglycine compound may contain N-phenylglycine.
- the content of the N-phenylglycine compound may be 0.010 parts by mass or more, 0.015 parts by mass or more, 0.020 parts by mass or more, 0.025 parts by mass or more, 0.028 parts by mass or more, or 0.030 parts by mass or more, relative to 100 parts by mass of the total amount of the (A) component and the (B) component, from the viewpoint of superior sensitivity, peelability, and adhesion, and may be 0.060 parts by mass or less, 0.055 parts by mass or less, 0.050 parts by mass or less, 0.045 parts by mass or less, 0.040 parts by mass or less, or 0.035 parts by mass or less, from the viewpoint of superior resolution.
- the content of the N-phenylglycine compound may be 0.010 parts by mass to 0.060 parts by mass, 0.015 parts by mass to 0.050 parts by mass, 0.020 parts by mass to 0.040 parts by mass, 0.025 parts by mass to 0.040 parts by mass, or 0.025 parts by mass to 0.035 parts by mass, relative to 100 parts by mass of the total amount of the (A) component and the (B) component.
- Component (C) may consist only of a hexaarylbiimidazole compound and an N-phenylglycine compound, or may further contain a photopolymerization initiator other than a hexaarylbiimidazole compound and an N-phenylglycine compound, as long as the effect of the present disclosure is not impaired.
- the content of the (C) component may be 0.1 parts by mass or more, 0.5 parts by mass or more, 1.0 parts by mass or more, 3.0 parts by mass or more, or 5.0 parts by mass or more, and may be 20.0 parts by mass or less, 15.0 parts by mass or less, 10.0 parts by mass or less, 8.0 parts by mass or less, 6.0 parts by mass or less, or 5.5 parts by mass or less, relative to 100 parts by mass of the total amount of the (A) component and the (B) component.
- Component (D) Sensitizer
- the photosensitive resin composition contains one or more types of component (D).
- Component (D) contains an anthracene compound.
- the photosensitive resin composition is particularly suitable for direct writing exposure methods because it contains an anthracene compound as component (D).
- anthracene compound examples include 1-methylanthracene, 2-methylanthracene, 9-methylanthracene, 2-ethylanthracene, 2-butylanthracene, 9-vinylanthracene, 9-phenylanthracene, 1-aminoanthracene, 2-aminoanthracene, 9-(methylaminomethyl)anthracene, 9-acetylanthracene, 9-anthraldehyde, 9,10-dimethylanthracene, 9,10-dimethoxyanthracene, 9,10-dipropionyl anthracene, and the like.
- anthracene examples include 9,10-dipentoxyanthracene, anthracene, 9,10-di(2-ethylhexyloxy)anthracene, 2-bromo-9,10-diphenylanthracene, 9-(4-bromophenyl)-10-phenylanthracene, 10-methyl-9-anthraldehyde, 1,4,9,10-tetrahydroxyanthracene, 9,10-dibutoxyanthracene, 9,10-diphenylanthracene, and 9,10-diethoxyanthracene.
- the anthracene compound may include at least one selected from the group consisting of an anthracene compound having an aryl group, and an anthracene compound having an alkoxy group. From the viewpoints of sensitivity, adhesion, resolution, and strippability, the anthracene compound may include 9,10-dibutoxyanthracene.
- the component (D) may consist only of an anthracene compound, or may further contain a sensitizer other than an anthracene compound, as long as the effects of the present disclosure are not impaired.
- the content of the (D) component may be 0.20 parts by mass or more, 0.30 parts by mass or more, 0.40 parts by mass or more, 0.50 parts by mass or more, 0.55 parts by mass or more, or 0.60 parts by mass or more, and may be 1.50 parts by mass or less, 1.00 parts by mass or less, 0.80 parts by mass or less, 0.75 parts by mass or less, or 0.70 parts by mass or less, relative to 100 parts by mass of the total amount of the (A) component and the (B) component.
- the photosensitive resin composition may further contain one or more other components other than the above-mentioned components.
- the other components include a polymerization inhibitor, a hydrogen donor (bis[4-(dimethylamino)phenyl]methane, bis[4-(diethylamino)phenyl]methane, etc.), tribromophenyl sulfone, a thermal color-developing inhibitor, a plasticizer (p-toluenesulfonamide, etc.), a pigment, a filler, a defoamer, a flame retardant, a stabilizer, an adhesion imparting agent, a leveling agent, a peeling promoter, an antioxidant, a fragrance, an imaging agent, and a thermal crosslinking agent.
- the content of the other components may be 0.005 parts by mass or more or 0.01 parts by mass or more, or may be 20 parts by mass or less, relative to 100 parts by mass of the total amount of the components (A) and
- the photosensitive resin composition may further contain one or more organic solvents in order to adjust the viscosity.
- organic solvents include methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, and propylene glycol monomethyl ether.
- the photosensitive resin composition may be in a liquid form or in a film form (photosensitive film).
- the photosensitive resin composition may be used, for example, as a negative-type photosensitive resin composition.
- the photosensitive resin composition may be suitably used in the method for forming a resist pattern and the method for manufacturing a wiring board, which will be described later.
- the photosensitive element according to the present embodiment includes a support and a photosensitive layer formed on the support using the above-mentioned photosensitive resin composition.
- the photosensitive element may further include a protective layer on the photosensitive layer.
- FIG. 1 is a schematic cross-sectional view showing a photosensitive element according to one embodiment.
- the photosensitive element 1 includes a support 2, a photosensitive layer 3 provided on the support 2, and a protective layer 4 provided on the side of the photosensitive layer 3 opposite the support 2.
- polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene-2,6-naphthalate (PEN); and polyolefins such as polypropylene and polyethylene.
- PET polyethylene terephthalate
- PBT polybutylene terephthalate
- PEN polyethylene-2,6-naphthalate
- polyolefins such as polypropylene and polyethylene.
- the support may have a polyester film or a PET film, which makes it easier to suppress the occurrence of defects in the resist.
- the haze of the support may be 0.01 to 5.0%, 0.01 to 1.5%, 0.01 to 1.0%, or 0.01 to 0.5%.
- Haze can be measured using a commercially available haze meter (turbidity meter) in accordance with the method specified in JIS K7105. Haze can be measured, for example, using a commercially available turbidity meter such as NDH-5000 (product name, manufactured by Nippon Denshoku Industries Co., Ltd.).
- the thickness of the support may be 1 ⁇ m or more, 5 ⁇ m or more, or 10 ⁇ m or more, from the viewpoint of easily preventing damage to the support when peeling the support from the photosensitive layer.
- the thickness of the support may be 100 ⁇ m or less, 50 ⁇ m or less, 30 ⁇ m or less, or 20 ⁇ m or less, from the viewpoint of easily and suitably exposing the support when exposing through the support.
- the protective layer may be a polymer film having heat resistance and solvent resistance, for example, a polyolefin film such as a polyethylene film or a polypropylene film.
- a polyethylene film as the protective layer, it is possible to suppress misalignment of the photosensitive element during winding, and since static electricity is unlikely to be generated when the protective layer is peeled off from the photosensitive layer, damage to the photosensitive layer can be suppressed.
- the thickness of the protective layer may be 1 ⁇ m or more, 5 ⁇ m or more, 10 ⁇ m or more, or 15 ⁇ m or more, from the viewpoint of easily suppressing damage to the protective layer when laminating the photosensitive layer and the support onto the substrate while peeling off the protective layer. From the viewpoint of easily improving productivity, the thickness may be 100 ⁇ m or less, 50 ⁇ m or less, 40 ⁇ m or less, or 30 ⁇ m or less.
- the thickness of the photosensitive layer after drying may be 29 ⁇ m to 300 ⁇ m.
- the thickness of the photosensitive layer may be 29 ⁇ m or more, 30 ⁇ m or more, 35 ⁇ m or more, 40 ⁇ m or more, 45 ⁇ m or more, 50 ⁇ m or more, 55 ⁇ m or more, or 60 ⁇ m or more, and from the viewpoint of peelability, the thickness may be 300 ⁇ m or less, 250 ⁇ m or less, 200 ⁇ m or less, 150 ⁇ m or less, 120 ⁇ m or less, 100 ⁇ m or less, 80 ⁇ m or less, 70 ⁇ m or less, or 60 ⁇ m or less.
- the thickness of the photosensitive layer may be the average thickness of 10 points.
- the photosensitive element 1 can be obtained, for example, as follows. First, a photosensitive layer 3 is formed on a support 2. The photosensitive layer 3 can be formed, for example, by applying a photosensitive resin composition to form a coating layer, and then drying this coating layer. Next, a protective layer 4 is coated on the surface of the photosensitive layer 3 opposite the support 2.
- the coating layer is formed by a known method such as roll coating, comma coating, gravure coating, air knife coating, die coating, bar coating, etc.
- the coating layer is dried, for example, at 70 to 150°C for about 5 to 30 minutes.
- the photosensitive element may further include other layers, such as a cushion layer, an adhesive layer, a light absorbing layer, a gas barrier layer, etc.
- the photosensitive element 1 may be, for example, in the form of a sheet, or may be in the form of a photosensitive element roll wound around a core. In the photosensitive element roll, the photosensitive element 1 is preferably wound with the support 2 on the outside.
- the core is formed of, for example, polyethylene, polypropylene, polystyrene, polyvinyl chloride, acrylonitrile-butadiene-styrene copolymer, or the like.
- An end separator may be provided on the end surface of the photosensitive element roll from the viewpoint of end surface protection, and a moisture-proof end surface separator may be provided from the viewpoint of edge fusion resistance.
- the photosensitive element 1 may be wrapped, for example, in a black sheet with low moisture permeability.
- the photosensitive element according to this embodiment can be suitably used in the resist pattern forming method and wiring board manufacturing method described below.
- the method for forming a resist pattern includes a step of forming a photosensitive layer on a substrate using the photosensitive resin composition or the photosensitive element (hereinafter also referred to as a "photosensitive layer forming step"), a step of photocuring a part of the photosensitive layer (hereinafter also referred to as an "exposure step”), and a step of removing an uncured part of the photosensitive layer (hereinafter also referred to as a "development step”), and may further include other steps as necessary.
- the resist pattern can also be called a photocured product pattern of the photosensitive resin composition, or a relief pattern.
- a photosensitive layer is formed on a substrate using a photosensitive resin composition or a photosensitive element.
- the substrate is not particularly limited, but typically includes a circuit-forming substrate having an insulating layer and a conductor layer formed on the insulating layer, or a die pad (substrate for lead frame) such as an alloy substrate.
- a photosensitive layer can be formed on the substrate by removing a protective layer from a photosensitive element, and then heating and pressing the photosensitive layer of the photosensitive element onto the substrate. This results in a laminate having a substrate, a photosensitive layer, and a support in that order.
- the photosensitive layer forming step may be carried out under reduced pressure from the viewpoint of adhesion and followability. Heating during compression bonding may be carried out at a temperature of 70 to 130°C, and compression bonding may be carried out at a pressure of 0.1 to 1.0 MPa (1 to 10 kgf/cm 2 ), but these conditions can be appropriately selected as necessary. If the photosensitive layer of the photosensitive element is heated to 70 to 130°C, it is not necessary to preheat the substrate in advance, but the substrate can be preheated in order to further improve adhesion and followability.
- the photosensitive layer may be exposed to active light rays through the support, or the support may be peeled off and then the photosensitive layer may be exposed to active light rays.
- the exposed portion irradiated with the active light rays is photocured to form a photocured portion (latent image).
- the exposure method may be any known exposure method, such as a method of irradiating an image of active light through a negative or positive mask pattern called artwork (mask exposure method), an LDI exposure method (direct imaging exposure), or a method of irradiating an image of a photomask through a lens using active light projected from the image (projection exposure method).
- the photosensitive resin composition according to this embodiment can be suitably used for direct imaging exposure.
- the light source of the actinic rays is not particularly limited as long as it is a commonly used known light source.
- carbon arc lamps, mercury vapor arc lamps, extra-high pressure mercury lamps, high pressure mercury lamps, xenon lamps, gas lasers such as argon lasers, solid-state lasers such as YAG lasers, and semiconductor lasers such as gallium nitride blue-violet lasers are used, which effectively emit ultraviolet rays.
- a light source capable of emitting monochromatic i-line light with an exposure wavelength of 365 nm a light source capable of emitting monochromatic h-line light with an exposure wavelength of 405 nm, or a light source capable of emitting actinic rays with an exposure wavelength of IHG crosstalk may be used.
- An example of a light source capable of emitting monochromatic i-line light with an exposure wavelength of 365 nm is an extra-high pressure mercury lamp.
- An example of a light source capable of emitting monochromatic h-line light with an exposure wavelength of 405 nm is a blue-violet laser diode with a wavelength of 405 nm.
- a post-exposure bake may be performed after the exposure step and before the development step.
- the temperature when performing the PEB may be 50 to 100°C. Heating may be performed using a heater such as a hot plate, a box dryer, or a heating roll.
- the developing step In the developing step, the uncured portion of the photosensitive layer is removed from the substrate. When the photosensitive layer is exposed through the support, the support and the uncured portion of the photosensitive layer are removed from the substrate. In the developing step, a resist pattern consisting of the photocured portion of the photosensitive layer is formed on the substrate.
- the developing method may be wet development or dry development.
- wet development a developer suitable for the photosensitive resin composition can be used, and development can be carried out by a known wet development method.
- wet development methods include the dip method, paddle method, high-pressure spray method, brushing, scrubbing, and rocking immersion. These wet development methods may be used alone or in combination of two or more methods.
- the developer is appropriately selected depending on the composition of the photosensitive resin composition, and may be, for example, an alkaline developer or an organic solvent developer.
- the alkaline developer may be an aqueous solution containing a base such as an alkali hydroxide such as lithium, sodium, or potassium hydroxide; an alkali carbonate such as lithium, sodium, potassium, or ammonium carbonate or bicarbonate; an alkali metal phosphate such as potassium phosphate or sodium phosphate; an alkali metal pyrophosphate such as sodium pyrophosphate or potassium pyrophosphate; borax; sodium metasilicate; tetramethylammonium hydroxide; ethanolamine; ethylenediamine; diethylenetriamine; 2-amino-2-hydroxymethyl-1,3-propanediol; 1,3-diamino-2-propanol; or morpholine.
- a base such as an alkali hydroxide such as lithium, sodium, or potassium hydroxide
- an alkali carbonate such as lithium, sodium, potassium, or ammonium carbonate or bicarbonate
- an alkali metal phosphate such as potassium phosphate
- an inorganic alkaline developer may be used.
- inorganic alkaline developers that can be used include a dilute solution of 0.1 to 5% by mass sodium carbonate, a dilute solution of 0.1 to 5% by mass potassium carbonate, a dilute solution of 0.1 to 5% by mass sodium hydroxide, or a dilute solution of 0.1 to 5% by mass sodium tetraborate.
- the pH of the alkaline developer used for development may be in the range of 9 to 11, and the temperature of the alkaline developer can be adjusted according to the developability of the photosensitive layer.
- a surfactant, an antifoaming agent, or a small amount of an organic solvent to promote development may be mixed into the alkaline developer.
- organic solvents used in the alkaline developer include 3-acetone alcohol, acetone, ethyl acetate, alkoxyethanol having an alkoxy group with 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether.
- organic solvents used in organic solvent developers include 1,1,1-trichloroethane, N-methyl-2-pyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and ⁇ -butyrolactone. To prevent ignition, these organic solvents may be used as organic solvent developers by adding water in the range of 1 to 20% by mass.
- a step of further curing the resist pattern by heating at 60 to 250° C. or exposing to light at an exposure dose of 0.2 to 10 J/cm 2 as necessary may be included.
- the method for manufacturing a wiring board according to this embodiment includes a step of forming a conductor pattern (wiring layer) by etching or plating a substrate on which a resist pattern has been formed by the above-described resist pattern forming method, and may also include other steps, such as a resist pattern removal step, as necessary.
- a resist pattern formed on a substrate having a conductor layer is used as a mask to etch away the conductor layer of the substrate that is not covered by resist, forming a conductor pattern.
- the etching method is appropriately selected depending on the conductive layer to be removed.
- etching solutions include cupric chloride solution, ferric chloride solution, alkaline etching solution, and hydrogen peroxide-based etching solution. From the viewpoint of a good etch factor, a ferric chloride solution may be used as the etching solution.
- a resist pattern formed on a substrate with a conductor layer is used as a mask to plate copper or solder onto the conductor layer of the substrate that is not covered by the resist.
- the resist is removed by removing the resist pattern, as described below, and the conductor layer that was covered by the resist is then etched to form the conductor pattern.
- the plating method may be electrolytic plating or electroless plating, and examples include copper plating such as copper sulfate plating and copper pyrophosphate plating, solder plating such as high-throw solder plating, nickel plating such as Watts bath (nickel sulfate-nickel chloride) plating and nickel sulfamate plating, and gold plating such as hard gold plating and soft gold plating.
- copper plating such as copper sulfate plating and copper pyrophosphate plating
- solder plating such as high-throw solder plating
- nickel plating such as Watts bath (nickel sulfate-nickel chloride) plating and nickel sulfamate plating
- gold plating such as hard gold plating and soft gold plating.
- the resist pattern on the substrate is removed.
- the resist pattern can be removed, for example, with an inorganic alkaline stripper or an organic alkaline stripper.
- inorganic alkaline stripper include a 1-10% by mass aqueous solution of sodium hydroxide and a 1-10% by mass aqueous solution of potassium hydroxide.
- organic alkaline stripper include an amine-based stripper such as ethanolamine, ethylenediamine, or diethylenetriamine, and an aqueous solution of tetramethylammonium hydroxide. From the viewpoint of the removability of the thick-film resist pattern, an organic alkaline stripper may also be used.
- Methods for removing the resist pattern include, for example, the immersion method and the spray method, which may be used alone or in combination.
- the conductor layer covered by the resist can be etched by further etching to form a conductor pattern, thereby manufacturing the desired wiring board.
- the method of etching in this case is appropriately selected depending on the conductor layer to be removed. For example, the above-mentioned etching solution can be used.
- the method for manufacturing a wiring board according to this embodiment can be applied to the manufacture of not only single-layer wiring boards, but also multi-layer wiring boards, and can also be applied to the manufacture of wiring boards with small-diameter through holes.
- the method for manufacturing a wiring board according to this embodiment can be suitably used for manufacturing high-density package substrates, in particular for manufacturing wiring boards using a semi-additive process.
- An example of a manufacturing process for a wiring board using a semi-additive process is shown in FIG. 2.
- a substrate (substrate for forming a circuit) is prepared in which a conductor layer 40 is formed on an insulating layer 50.
- the conductor layer 40 is, for example, a copper layer.
- a photosensitive layer 30 and a support 20 are formed on the conductor layer 40 of the substrate by the photosensitive layer forming process.
- a photocured portion is formed in the photosensitive layer 30 by irradiating the photosensitive layer 30 with active light 80 in a desired pattern by a direct writing exposure method through the support 20 by the exposure process by the development process, thereby forming a resist pattern 32, which is a photocured portion, on the substrate.
- a plating layer 60 is formed on the conductor layer 40 of the substrate that is not covered by resist by a plating process using the resist pattern 32, which is the photocured portion, as a mask.
- the conductor layer 40 and the plating layer 60 may be made of the same material or different materials. When the conductor layer 40 and the plating layer 60 are made of the same material, the conductor layer 40 and the plating layer 60 may be integrated.
- the photocured resist pattern 32 is peeled off and removed with a strong alkaline aqueous solution.
- the strong alkaline developer may be, for example, a 1-10% by mass sodium hydroxide aqueous solution, a 1-10% by mass potassium hydroxide aqueous solution, or the like.
- the conductor layer 40 masked by the resist pattern 32 is removed by flash etching to form a conductor pattern 70 including the plating layer 62 after etching and the conductor layer 42 after etching.
- the etching solution is appropriately selected depending on the type of conductor layer 40, and may be, for example, a cupric chloride solution, a ferric chloride solution, an alkaline etching solution, a hydrogen peroxide etching solution, or the like.
- a wiring board having a fine conductor pattern can be produced.
- binder polymer A1 The non-volatile content (solid content) of the binder polymer A1 solution was 48% by mass.
- the weight average molecular weight of the binder polymer A1 was 40,000.
- the weight average molecular weight was measured by gel permeation chromatography (GPC) and calculated using a calibration curve of standard polystyrene.
- GPC conditions were as follows: (GPC conditions) Pump: Hitachi L-6000 type (manufactured by Hitachi, Ltd., product name) Columns: 3 in total Gelpack GL-R420 Gelpack GL-R430 Gelpack GL-R440 (above, product name, manufactured by Resonac Corporation) Eluent: tetrahydrofuran Measurement temperature: 40°C Flow rate: 2.05 mL/min Detector: Hitachi L-3300 RI (manufactured by Hitachi, Ltd., product name)
- Photosensitive resin compositions were prepared by mixing the components shown in Tables 1 and 2 in the amounts (parts by mass) shown in the tables.
- the amounts (parts by mass) of components other than the solvent shown in Tables 1 and 2 are the masses of non-volatile matters (solid content). Details of each component shown in Tables 1 and 2 are as follows.
- Binder Polymer Binder polymer A1 synthesized above (Photopolymerizable Compound) FA-321M (70): 70% solution of 2,2-bis(4-(methacryloxyethoxy)phenyl)propane (average 10 mol adduct of ethylene oxide) in propylene glycol monomethyl ether (manufactured by Resonac Corporation)
- FA-023M PO/EO modified dimethacrylate (manufactured by Resonac Corporation, an adduct of an average of 4 mol of ethylene oxide and an average of 12 mol of propylene oxide (total value))
- FA-024M PO/EO modified dimethacrylate (manufactured by Resonac Corporation, an adduct of an average of 6 mol of ethylene oxide and an average of 12 mol of propylene oxide (total value))
- FA-137M EO-modified trimethylolpropane trimethacrylate (ethylene oxide adduct
- a 16 ⁇ m-thick polyethylene terephthalate film (manufactured by Toray Industries, Inc., product name: FB-40) was prepared as a support, and the photosensitive resin composition was applied onto the support so as to have a uniform thickness, and then dried in hot air convection dryers at 80° C. and 120° C. to form a photosensitive layer having a thickness of 40 ⁇ m after drying.
- a polyethylene film (manufactured by Tamapoly Corporation, product name: NF-15) was laminated onto this photosensitive layer as a protective layer, to obtain a photosensitive element in which the support, photosensitive layer, and protective layer were laminated in that order.
- a copper-clad laminate (substrate, manufactured by Resonac Corporation, product name: MCL-E-67) comprising a glass epoxy material and copper foil (thickness: 16 ⁇ m) arranged on both sides thereof was pickled and washed with water, and then dried with an air flow.
- the copper-clad laminate was heated to 80° C., and the above-mentioned photosensitive element was laminated onto the copper-clad laminate while peeling off the protective layer, so that the photosensitive layer was in contact with the copper surface, thereby obtaining a laminate comprising the copper-clad laminate, the photosensitive layer, and the support in that order.
- the lamination was performed using a heat roll at 110° C., with a pressure of 0.4 MPa and a roll speed of 1.0 m/min.
- ⁇ Evaluation> (minimum development time)
- the laminate was cut into a square shape (5 cm x 5 cm), and the support was peeled off to obtain a test piece.
- the unexposed photosensitive layer in the test piece was spray-developed at a pressure of 0.15 MPa using a 1% by mass aqueous solution of sodium carbonate at 30°C, and the shortest time at which it was possible to visually confirm that 1 mm or more of the unexposed photosensitive layer had been removed was defined as the minimum development time (MD).
- a full cone type nozzle was used for the spray development. The distance between the test piece and the tip of the nozzle was 6 cm, and the test piece was positioned so that the center of the test piece and the center of the nozzle coincided. The shorter the minimum development time (unit: second), the better the developability.
- sensitivity After placing a Hitachi 41-step step tablet on the support of the laminate, the photosensitive layer was exposed through the support using a direct imaging exposure machine (manufactured by Via Mechanics Co., Ltd., product name: DE-1UH) with a blue-violet laser diode having a wavelength of 405 nm as a light source, at an exposure amount (amount of irradiation energy) such that the number of remaining steps of the Hitachi 41-step step tablet was 15.
- the sensitivity (photosensitivity) was evaluated based on the exposure amount (unit: mJ/cm 2 ) at this time. The lower the exposure amount, the higher the sensitivity.
- the support was peeled off from the laminate to expose the photosensitive layer, and the unexposed areas were removed by spraying a 1% by weight aqueous solution of sodium carbonate at 30°C for twice the minimum development time.
- the space areas (unexposed areas) were removed without residue, and the line areas (exposed areas) were formed without meandering or chipping.
- Resolution was evaluated based on the minimum space width (unit: ⁇ m) in the resist pattern, and adhesion was evaluated based on the minimum line width (unit: ⁇ m) in the resist pattern. For both resolution and adhesion, the smaller the numerical value, the better the quality.
- a glass chrome type phototool (having a planar pattern of 40 mm x 60 mm) was used as a negative for evaluating peel test on the support of the laminate, and exposure was performed on the photosensitive layer through the support using a direct imaging exposure machine (manufactured by Via Mechanics Co., Ltd., product name: DE-1UH) with a blue-violet laser diode having a wavelength of 405 nm as a light source, with an exposure amount such that the number of remaining steps of a Hitachi 41-step step tablet was 15.
- a direct imaging exposure machine manufactured by Via Mechanics Co., Ltd., product name: DE-1UH
- the support was peeled off from the laminate to expose the photosensitive layer, and a 1% by mass aqueous solution of sodium carbonate was sprayed at 30°C for twice the minimum development time to remove the unexposed areas, yielding a substrate on which a cured film had been formed.
- the substrate was left at room temperature for 3 hours, and then immersed in an amine-based stripping solution (aqueous solution of 6% by volume R-100S + 2% by volume R-101, manufactured by Mitsubishi Gas Chemical Co., Inc.) heated to 50°C and stirred at a speed of 400 rpm.
- an amine-based stripping solution aqueous solution of 6% by volume R-100S + 2% by volume R-101, manufactured by Mitsubishi Gas Chemical Co., Inc.
- T1 peeling start time
- T2 peeling end time
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Abstract
Description
[1]バインダーポリマーと、光重合性化合物と、光重合開始剤と、増感剤と、を含有し、光重合開始剤が、ヘキサアリールビイミダゾール化合物とN-フェニルグリシン化合物とを含み、増感剤が、アントラセン化合物を含む、感光性樹脂組成物。
[2]上記N-フェニルグリシン化合物の含有量が、上記バインダーポリマー及び上記光重合性化合物の総量100質量部に対して0.06質量部以下である、上記[1]に記載の感光性樹脂組成物。
[3]上記光重合性化合物が、脂環構造を有する(メタ)アクリレート化合物を含む、上記[1]又は[2]に記載の感光性樹脂組成物。
[4]上記光重合性化合物が、ポリアルキレングリコールジ(メタ)アクリレート化合物を含む、上記[1]~[3]のいずれかに記載の感光性樹脂組成物。
[5]上記ポリアルキレングリコールジ(メタ)アクリレートの含有量が、上記光重合性化合物の総量を基準として、8質量%以上30質量%以下である、上記[4]に記載の感光性樹脂組成物。
[6]支持体と、支持体上に上記[1]~[5]のいずれかに記載の感光性樹脂組成物を用いて形成された感光層と、を備える、感光性エレメント。
[7]上記感光層の厚さが29μm以上である、上記[6]に記載の感光性エレメント。
[8]基板上に上記[1]~[5]のいずれかに記載の感光性樹脂組成物、又は上記[6]若しくは[7]に記載の感光性エレメントを用いて感光層を形成する工程と、感光層の一部を光硬化させる工程と、感光層の未硬化部を除去する工程と、を備える、レジストパターンの形成方法。
[9]上記[8]に記載のレジストパターンの形成方法によりレジストパターンが形成された基板をエッチング又はめっき処理して、導体パターンを形成する工程を備える、配線基板の製造方法。
本実施形態に係る感光性樹脂組成物は、バインダーポリマー(以下、「(A)成分」ともいう)と、光重合性化合物(以下、「(B)成分」ともいう)と、光重合開始剤(以下、「(C)成分」ともいう)と、増感剤(以下、「(D)成分」ともいう)とを含有する。(C)成分は、ヘキサアリールビイミダゾール化合物及びN-フェニルグリシン化合物を含み、(D)成分は、アントラセン化合物を含む。本実施形態に係る感光性樹脂組成物は、このような特定の光重合開始剤と特定の増感剤とを併用することにより、感度、解像性、密着性及び剥離性に優れ、直接描画露光法及び厚膜用途に好適に使用可能である。以下、各成分について説明する。
感光性樹脂組成物は、(A)成分の1種又は2種以上を含んでいる。(A)成分としては、例えば、アクリル系樹脂、スチレン系樹脂、エポキシ系樹脂、アミド系樹脂、アミドエポキシ系樹脂、アルキド系樹脂及びフェノール系樹脂が挙げられる。
感光性樹脂組成物は、(B)成分の1種又は2種以上を含んでいる。(B)成分は、光により重合する化合物であればよく、例えば、エチレン性不飽和結合を有する化合物であってもよい。
感光性樹脂組成物は、(C)成分の1種又は2種以上を含んでいる。(C)成分は、ヘキサアリールビイミダゾール化合物とN-フェニルグリシン化合物とを含む。感光性樹脂組成物は、(C)成分としてヘキサアリールビイミダゾール化合物を使用する場合、良好な解像性及びレジストパターン形成性を得ることができるものの、感度が低くなることがある。本発明者らは、ヘキサアリールビイミダゾール化合物にN-フェニルグリシン化合物を組み合わせて使用することにより、解像性に優れるとともに、感度、密着性及び剥離性を向上できることを見出した。
感光性樹脂組成物は、(D)成分の1種又は2種以上を含んでいる。(D)成分は、アントラセン化合物を含む。感光性樹脂組成物は、(D)成分として、アントラセン化合物を含むことにより、特に直接描画露光法に適している。アントラセン化合物としては、例えば、1-メチルアントラセン、2-メチルアントラセン、9-メチルアントラセン、2-エチルアントラセン、2-ブチルアントラセン、9-ビニルアントラセン、9-フェニルアントラセン、1-アミノアントラセン、2-アミノアントラセン、9-(メチルアミノメチル)アントラセン、9-アセチルアントラセン、9-アントラアルデヒド、9,10-ジメチルアントラセン、9,10-ジメトキシアントラセン、9,10-ジプロポキシアントラセン、9,10-ジペントキシアントラセン、アントラセン、9,10-ジ(2-エチルヘキシルオキシ)アントラセン、2-ブロモ-9,10-ジフェニルアントラセン、9-(4-ブロモフェニル)-10-フェニルアントラセン、10-メチル-9-アントラアルデヒド、1,4,9,10-テトラヒドロキシアントラセン、9,10-ジブトキシアントラセン、9,10-ジフェニルアントラセン、及び9,10-ジエトキシアントラセンが挙げられる。アントラセン化合物は、アリール基を有するアントラセン化合物、及びアルコキシ基を有するアントラセン化合物からなる群より選ばれる少なくとも1種を含んでもよい。感度、密着性、解像性及び剥離性の観点から、アントラセン化合物は、9,10-ジブトキシアントラセンを含んでもよい。(D)成分は、アントラセン化合物のみからなっていてもよく、本開示の効果を妨げない範囲で、アントラセン化合物以外の増感剤を更に含んでもよい。
感光性樹脂組成物は、上述した成分以外のその他の成分の1種又は2種以上を更に含有してもよい。その他の成分としては、例えば、重合禁止剤、水素供与体(ビス[4-(ジメチルアミノ)フェニル]メタン、ビス[4-(ジエチルアミノ)フェニル]メタン等)、トリブロモフェニルスルホン、熱発色防止剤、可塑剤(p-トルエンスルホンアミド等)、顔料、充填剤、消泡剤、難燃剤、安定剤、密着性付与剤、レベリング剤、剥離促進剤、酸化防止剤、香料、イメージング剤、及び熱架橋剤が挙げられる。その他の成分の含有量は、(A)成分及び(B)成分の総量100質量部に対して、0.005質量部以上又は0.01質量部以上であってもよく、20質量部以下であってもよい。
本実施形態に係る感光性エレメントは、支持体と、該支持体上に上述の感光性樹脂組成物を用いて形成された感光層と、を備える。感光性エレメントは、感光層上に保護層を更に備えてもよい。
本実施形態に係るレジストパターンの形成方法は、基板上に、上記感光性樹脂組成物又は上記感光性エレメントを用いて感光層を形成する工程(以下、「感光層形成工程」ともいう)と、感光層の一部を光硬化させる工程(以下、「露光工程」ともいう)と、感光層の未硬化部を除去する工程(以下、「現像工程」ともいう)と、を備え、必要に応じてその他の工程を更に備えてもよい。なお、レジストパターンとは、感光性樹脂組成物の光硬化物パターンともいえ、レリーフパターンともいえる。
感光層形成工程においては、基板上に感光性樹脂組成物又は感光性エレメントを用いて感光層を形成する。上記基板としては、特に制限されないが、通常、絶縁層と絶縁層上に形成された導体層とを備えた回路形成用基板、又は、合金基材等のダイパッド(リードフレーム用基材)などが用いられる。
露光工程においては、支持体を介して感光層を活性光線によって露光してもよく、支持体を剥離してから感光層を活性光線によって露光してもよい。これにより、活性光線が照射された露光部が光硬化して、光硬化部(潜像)が形成される。
現像工程においては、感光層の未硬化部を基板上から除去する。支持体を介して感光層を露光した場合には、支持体及び感光層の未硬化部を基板上から除去する。現像工程により、上記感光層が光硬化した光硬化部からなるレジストパターンが基板上に形成される。現像方法は、ウェット現像又はドライ現像であってもよい。
本実施形態に係るレジストパターンの形成方法では、現像工程において未硬化部を除去した後、必要に応じて60~250℃での加熱又は0.2~10J/cm2の露光量での露光を行うことによりレジストパターンを更に硬化する工程を備えてもよい。
本実施形態に係る配線基板の製造方法は、上記レジストパターンの形成方法によりレジストパターンが形成された基板をエッチング処理又はめっき処理して導体パターン(配線層)を形成する工程を備え、必要に応じてレジストパターン除去工程等のその他の工程を備えてもよい。
メタクリル酸27質量部、メタクリル酸メチル5質量部、スチレン45質量部、及びメタクリル酸ベンジル23質量部をアゾビスイソブチロニトリル0.9質量部と共に混合し、溶液(a)を調製した。アセトン/プロピレングリコールモノメチルエーテル(質量比:6/1)の混合液(x)50質量部に、アゾビスイソブチロニトリル0.5質量部を溶解して溶液(b)を調製した。撹拌機、還流冷却器、温度計、滴下ロート及び窒素ガス導入管を備えたフラスコに、混合液(x)を500g投入した後、フラスコ内に窒素ガスを吹き込みながら撹拌し、80℃まで昇温させた。フラスコ内の上記混合液に、滴下速度を一定にして上記溶液(a)を4時間かけて滴下した後、80℃にて2時間撹拌した。次いで、フラスコ内の溶液に、滴下速度を一定にして上記溶液(b)を10分間かけて滴下した後、フラスコ内の溶液を80℃にて3時間撹拌した。さらに、フラスコ内の溶液を30分間かけて90℃まで昇温させ、90℃にて2時間保温した後、撹拌を止め、室温(25℃)まで冷却して、バインダーポリマーA1の溶液を得た。バインダーポリマーA1の溶液の不揮発分(固形分)は48質量%であった。バインダーポリマーA1の重量平均分子量は、40000であった。
(GPC条件)
ポンプ:日立 L-6000型(株式会社日立製作所製、商品名)
カラム:以下の計3本
Gelpack GL-R420
Gelpack GL-R430
Gelpack GL-R440(以上、株式会社レゾナック製、商品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:2.05mL/分
検出器:日立 L-3300型RI(株式会社日立製作所製、商品名)
表1及び2に示す各成分を、同表に示す配合量(質量部)で混合することにより、感光性樹脂組成物をそれぞれ調製した。なお、表1及び2に示す溶剤以外の成分の配合量(質量部)は、不揮発分の質量(固形分量)である。表1及び2に示す各成分の詳細は、以下の通りである。
・ポリマーA1:上記で合成したバインダーポリマーA1
(光重合性化合物)
・FA-321M(70):2,2-ビス(4-(メタクリロキシエトキシ)フェニル)プロパン(エチレンオキサイド平均10mol付加物)のプロピレングリコールモノメチルエーテル70%溶液(株式会社レゾナック製)
・FA-023M:PO・EO変性ジメタクリレート(株式会社レゾナック製、エチレンオキサイド平均4mol及びプロピレンオキサイド平均12mol付加物(合計値))
・FA-024M:PO・EO変性ジメタクリレート(株式会社レゾナック製、エチレンオキサイド平均6mol及びプロピレンオキサイド平均12mol付加物(合計値))
・FA-137M:EO変性トリメチロールプロパントリメタクリレート(エチレンオキサイド平均21mol付加物、株式会社レゾナック製)
・UA11:EO変性ウレタンメタアクリレート(新中村化学工業株式会社製)
・UA13:PO・EO変性ウレタンメタアクリレート(新中村化学工業株式会社製)
・FA-513AS:ジシクロペンタニルアクリレート(株式会社レゾナック製)
・FA-MECH(100):γ-クロロ-β-ヒドロキシプロピル-β’-メタクリロイルオキシエチル-o-フタレート(株式会社レゾナック製)
(光重合開始剤)
・N-PG:N-フェニルグリシン
・BCIM:2,2’-ビス(o-クロロフェニル)-4,4’,5,5’-テトラフェニル-1,2’-ビイミダゾール(Hampford社製)
(増感剤)
・DBA:9,10-ジブトキシアントラセン(川崎化成工業株式会社製)
・EAB:4,4’-ビス(ジエチルアミノ)ベンゾフェノン
(その他の成分)
・LCV:ロイコクリスタルバイオレット(山田化学工業株式会社製)
・MKG:マラカイトグリーン(大阪有機化学工業株式会社製)
・LA-7RD:4-ヒドロキシ-2,2,6,6-テトラメチルピペリジン-N-オキシル(株式会社アデカ製)
・DIC-TBC-5P:4-tert-ブチルカテコール(DIC株式会社製)
・SF-808H:カルボキシベンゾトリアゾール、5-アミノ-1H-テトラゾール、メトキシプロパノールの混合物(サンワ化成株式会社製)
(溶剤)
・ACS:アセトン
・TLS:トルエン
・MAL:メタノール
支持体として厚さ16μmのポリエチレンテレフタレートフィルム(東レ株式会社製、商品名:FB-40)を用意し、支持体上に、感光性樹脂組成物を厚さが均一になるように塗布した後、80℃及び120℃の熱風対流式乾燥器で順次乾燥して、乾燥後の厚さが40μmである感光層を形成した。この感光層上に保護層としてポリエチレンフィルム(タマポリ株式会社製、商品名:NF-15)を貼り合わせ、支持体と感光層と保護層とが順に積層された感光性エレメントを得た。
ガラスエポキシ材と、その両面に配置された銅箔(厚さ:16μm)とを備える銅張積層板(基板、株式会社レゾナック製、商品名:MCL-E-67)に対して、酸洗及び水洗後、空気流で乾燥した。次いで、銅張積層板を80℃に加熱した後、保護層を剥離しながら、感光層が銅表面に接するように上述の感光性エレメントを銅張積層板にラミネートすることにより、銅張積層板、感光層及び支持体を順に備える積層体を得た。ラミネートは、110℃のヒートロールを用いて、0.4MPaの圧着圧力、1.0m/分のロール速度で行った。
(最小現像時間)
上記積層体を正方形状(5cm×5cm)に切断した後、支持体を剥離することにより試験片を得た。次に、30℃の1質量%炭酸ナトリウム水溶液を用いて、試験片における未露光の感光層を0.15MPaの圧力でスプレー現像し、1mm以上の未露光の感光層が除去されたことを目視で確認できる最短の時間を最小現像時間(MD)とした。スプレー現像におけるノズルは、フルコーンタイプを使用した。試験片とノズル先端との距離は6cmであり、試験片の中心とノズルの中心とが一致するように配置した。最小現像時間(単位:秒)が短いほど、現像性が良好であることを意味する。
上記積層体の支持体上に日立41段ステップタブレットを載置した後、波長405nmの青紫色レーザダイオードを光源とする直描露光機(ビアメカニクス株式会社製、商品名:DE-1UH)を用いて、日立41段ステップタブレットの残存段数が15段となる露光量(照射エネルギー量)で、支持体を介して感光層を露光した。このときの露光量(単位:mJ/cm2)により感度(光感度)を評価した。露光量が少ないほど、感度が高いことを意味する。
ライン幅(L)/スペース幅(S)がx/x(x=3~30、単位:μm、1μm間隔)である描画パターンを用いて、日立41段ステップタブレットの残存段数が15段となる露光量で、波長405nmの青紫色レーザダイオードを光源とする直描露光機(ビアメカニクス株式会社製、商品名:DE-1UH)により、上記積層体の感光層に対して露光を行った。
上記積層体の支持体上に、剥離試験評価用ネガとしてガラスクロムタイプのフォトツール(40mm×60mmの平面パターンを有するもの)を使用し、波長405nmの青紫色レーザダイオードを光源とする直描露光機(ビアメカニクス株式会社製、商品名:DE-1UH)を用いて、日立41段ステップタブレットの残存段数が15段となる露光量で、支持体を介して感光層に対し、露光を行った。
Claims (11)
- バインダーポリマーと、光重合性化合物と、光重合開始剤と、増感剤と、を含有し、
前記光重合開始剤が、ヘキサアリールビイミダゾール化合物とN-フェニルグリシン化合物とを含み、
前記増感剤が、アントラセン化合物を含む、感光性樹脂組成物。 - 前記N-フェニルグリシン化合物の含有量が、前記バインダーポリマー及び前記光重合性化合物の総量100質量部に対して0.06質量部以下である、請求項1に記載の感光性樹脂組成物。
- 前記光重合性化合物が、脂環構造を有する(メタ)アクリレート化合物を含む、請求項1に記載の感光性樹脂組成物。
- 前記光重合性化合物が、ポリアルキレングリコールジ(メタ)アクリレート化合物を含む、請求項1に記載の感光性樹脂組成物。
- 前記ポリアルキレングリコールジ(メタ)アクリレート化合物の含有量が、前記光重合性化合物の総量を基準として、8質量%以上30質量%以下である、請求項4に記載の感光性樹脂組成物。
- 支持体と、
前記支持体上に請求項1~5のいずれか一項に記載の感光性樹脂組成物を用いて形成された感光層と、を備える、感光性エレメント。 - 前記感光層の厚さが29μm以上である、請求項6に記載の感光性エレメント。
- 基板上に請求項1~5のいずれか一項に記載の感光性樹脂組成物を用いて感光層を形成する工程と、
前記感光層の一部を光硬化させる工程と、
前記感光層の未硬化部を除去する工程と、を備える、レジストパターンの形成方法。 - 基板上に請求項6に記載の感光性エレメントを用いて感光層を形成する工程と、
前記感光層の一部を光硬化させる工程と、
前記感光層の未硬化部を除去する工程と、を備える、レジストパターンの形成方法。 - 請求項8に記載のレジストパターンの形成方法によりレジストパターンが形成された基板をエッチング又はめっき処理して、導体パターンを形成する工程を備える、配線基板の製造方法。
- 請求項9に記載のレジストパターンの形成方法によりレジストパターンが形成された基板をエッチング又はめっき処理して、導体パターンを形成する工程を備える、配線基板の製造方法。
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