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WO2024252815A1 - Substrate - Google Patents

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Publication number
WO2024252815A1
WO2024252815A1 PCT/JP2024/016050 JP2024016050W WO2024252815A1 WO 2024252815 A1 WO2024252815 A1 WO 2024252815A1 JP 2024016050 W JP2024016050 W JP 2024016050W WO 2024252815 A1 WO2024252815 A1 WO 2024252815A1
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WO
WIPO (PCT)
Prior art keywords
layer
planar
pattern
voltage region
power supply
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PCT/JP2024/016050
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French (fr)
Japanese (ja)
Inventor
康裕 貝崎
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details

Definitions

  • This disclosure relates to a substrate on which a digital isolator is mounted.
  • Conventional insulating elements have mainly been optical isolators that combine a light-emitting element (e.g., an LED (Light Emitting Diode)) with a light-receiving element, but due to issues with product life and reliability, there is a shift towards digital isolators (see Patent Document 2).
  • a light-emitting element e.g., an LED (Light Emitting Diode)
  • LED Light Emitting Diode
  • Digital isolators are classified into magnetic coupling and capacitive coupling, depending on the method of signal transmission in the insulating area (see Patent Documents 3 and 4).
  • EMI Electro Magnetic Interference
  • a substrate has a first voltage region and a second voltage region in a plan view, and is a substrate on which a digital isolator is mounted to electrically isolate the first voltage region and the second voltage region, and includes a core layer, a first ground layer which is a conductor and is provided in the first voltage region on the first main surface of the core layer, a second ground layer which is a conductor and is provided in the second voltage region on the first main surface of the core layer, a first power supply layer which is provided in the first voltage region on the second main surface of the core layer, and a second ground layer which is a conductor and is provided in the second voltage region on the second main surface of the core layer.
  • the digital isolator includes a power supply layer, a plurality of planar patterns including two planar patterns that are conductors and are arranged so that at least a portion of the planar patterns overlap each other in a planar view of the board, and a linear pattern that is linear in the planar view, the linear pattern is arranged on a path that connects one of the first ground layer and the first power supply layer and one of the second ground layer and the second power supply layer, the linear pattern is connected to one of the two planar patterns, and the resonant frequency of a resonant circuit including the two planar patterns and the linear pattern has a value corresponding to signal transmission by the digital isolator.
  • FIG. 1 is a schematic diagram showing a signal path of an isolation element.
  • FIG. 2 is a cross-sectional view of a conventional multilayer board.
  • FIG. 3 is a schematic perspective view showing a layer structure of the multilayer board according to the first embodiment.
  • FIG. 4 is a diagram showing a configuration of a multilayer substrate according to the first embodiment.
  • FIG. 5 is a diagram showing an example of propagation characteristics of a common mode current in the multilayer substrate according to the first embodiment.
  • FIG. 6 is a diagram showing a configuration of a multilayer substrate according to the second embodiment.
  • FIG. 7 is a diagram showing a configuration of a multilayer substrate according to the third embodiment.
  • FIG. 8 is a diagram showing the configuration of a double-sided board according to the fourth embodiment.
  • Fig. 1 is a schematic diagram showing a signal path of an isolation element.
  • Fig. 1(a) is a circuit image diagram when the isolation method is a magnetic method, and is illustrated for reference.
  • Fig. 1(b) shows a signal path of an isolation element.
  • Fig. 2 is a cross-sectional view of a multilayer substrate 1000 of a conventional example.
  • Fig. 2(a) is a cross-sectional view of the multilayer substrate 1000
  • Fig. 2(b) is a plan view showing a second conductor layer 120
  • Fig. 2(c) is a plan view showing a third conductor layer 130.
  • the cross-sectional view of the second conductor layer 120 shown in FIG. 2(a) shows a cross-sectional view of the second conductor layer 120 cut along the cutting line IIa1-IIa1 shown in FIG. 2(b), and the cross-sectional view of the third conductor layer 130 shown in FIG. 2(a) shows a cross-sectional view of the third conductor layer 130 cut along the cutting line IIa2-IIa2 shown in FIG. 2(c).
  • the cutting lines IIa1-IIa1 and IIa2-IIa2 overlap in plan view.
  • the relationship between the cross-sectional views of the second conductor layer 120 and the third conductor layer 130 shown in FIG. 4, FIG. 6 to FIG. 8 shown below and the cutting lines shown in FIG. 2(b) and FIG. 6(c) is the same as that shown in FIG. 2, so the description will be omitted.
  • the layer structure of the multilayer substrate 1000 will be explained in the embodiment.
  • a digital isolator basically exchanges signals using high-frequency digital signals on a differential transmission path formed by a transformer or capacitor between regions of different potentials (the first voltage region R1 shown in FIG. 2A, which is the region of V1, and the second voltage region R2 shown in FIG. 2A, which is the region of V2) sandwiching an insulating region R3 (see FIG. 2A).
  • a common mode current is generated in addition to the normal mode signal on the differential transmission path.
  • This common mode current becomes a leakage current (stray current), but since the digital isolator has an insulating region, there is a risk that the leakage current cannot return from the voltage region to which it is propagated to the voltage region from which the signal originates.
  • the emission of a digital isolator is a phenomenon in which the leakage current that cannot be returned diffuses as radiated noise (emission) from the end of the insulating region.
  • GND1 the ground in the first voltage region R1
  • GND2 the ground in the second voltage region R2
  • One method is to connect a safe-rated capacitor across the barrier between different voltage domains, and the other is to form an overlapping capacitor by extending the ground plane and power plane of the internal layers of the laminate board to the insulating region R3 of the laminate board.
  • the capacitor is formed by a planar pattern 1123 connected to the first ground layer 1121 and a planar pattern 1133 connected to the second power layer 1132.
  • the capacitor may also be formed by a planar pattern connected to the second ground layer 1122 and a planar pattern connected to the first power layer 1131.
  • the method of connecting a capacitor has problems such as difficulty in handling high-frequency carrier waves due to the influence of the parasitic inductance of the capacitor, and the loop area of the common mode current formed by the placement of the capacitor and the insulating element becoming larger.
  • emissions are proportional to the magnitude and area of the current flowing through the loop, so the larger the loop area, the higher the emissions.
  • the capacitance of the formed capacitor depends on the thickness of the board, and that the corresponding insulation standard places restrictions on the board thickness.
  • the representative insulation standard IEC62368 (formerly IEC60950) specifies that the thickness of a single layer between conductors of different potentials must be 0.4 mm or more. This causes a problem that the signal passing characteristics (frequency characteristics) obtained by forming an internal layer capacitor do not match the frequency of the carrier wave used in the insulating element.
  • the inventors of the present application therefore conducted extensive research into a board (board structure) that can efficiently return the common mode current of digital isolation, as a board on which a digital isolator is mounted, to prevent the occurrence of electromagnetic interference, and came up with the board described below.
  • each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match.
  • the same reference numerals are used for substantially the same configurations, and duplicate explanations are omitted or simplified.
  • the X-axis, Y-axis, and Z-axis represent the three axes of a right-handed three-dimensional Cartesian coordinate system.
  • the Z-axis direction is the stacking direction (thickness direction) of the multilayer board.
  • planar view means viewing the multilayer board along the stacking direction of the multilayer board.
  • the terms “on XX (e.g., on the main surface),” “above,” and “below” do not refer to the upward direction (vertically above) and downward direction (vertically below) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in the stacked configuration.
  • the terms “on XX (e.g., on the main surface),” “above,” and “below” apply not only to cases where two components are arranged with a gap between them and another component exists between the two components, but also to cases where two components are arranged in contact with each other.
  • ordinal numbers such as “first” and “second” do not refer to the number or order of components, unless otherwise specified, but are used for the purpose of avoiding confusion between and distinguishing between components of the same type.
  • connection means an electrical connection, and includes not only cases where two components are directly connected, but also cases where two components are indirectly connected with another component inserted between them.
  • FIG. 3 is a schematic perspective view showing the layer configuration of the multilayer substrate 100 according to the present embodiment.
  • Fig. 4 is a diagram showing the configuration of the multilayer substrate 100 according to the present embodiment.
  • Fig. 4(a) is a cross-sectional view of the multilayer substrate 100
  • Fig. 4(b) is a plan view showing the second conductor layer 120
  • Fig. 4(c) is a plan view showing the third conductor layer 130.
  • each conductor layer and the insulating device 107 are illustrated, and for convenience, other components are not illustrated. Also, in FIG. 3, the insulating device 107 is illustrated in a state where it is not mounted on the multilayer substrate 100, and in FIG. 4, the insulating device 107 is illustrated in a state where it is mounted on the multilayer substrate 100. Also, in this embodiment, an example in which a four-layer substrate is used as a representative multilayer substrate 100 will be described.
  • the multilayer board 100 on which the insulating device 107 is mounted is used in equipment that has a mixture of parts (circuits) that operate at high voltages and parts (circuits) that operate at low voltages, to prevent damage caused by the application of high voltage to parts that operate at low voltages.
  • equipment include, but are not limited to, industrial equipment such as power supplies and motors, medical equipment, and in-vehicle equipment such as ECUs (Electronic Control Units) installed in hybrid automobiles.
  • the multilayer substrate 100 has a first voltage region R1 and a second voltage region R2 which are different voltage regions, and an insulating region R3 between the first voltage region R1 and the second voltage region R2.
  • the region on the negative Y-axis side of the insulating region R3 (three-dimensional region) is the first voltage region R1 (three-dimensional region), and the region on the positive Y-axis side of the insulating region R3 is the second voltage region R2 (three-dimensional region).
  • the multilayer substrate 100 also includes a core layer 101, a first insulating layer 102, a second insulating layer 103, and an insulating device 107.
  • the multilayer substrate 100 includes the second insulating layer 103, the core layer 101, and the first insulating layer 102 stacked in this order, and the insulating device 107 is mounted on the first insulating layer 102.
  • the multilayer substrate 100 is an example of a substrate.
  • the core layer 101 is an insulating substrate provided in the multilayer substrate 100, and is, for example, a resin substrate.
  • the core layer 101 may be formed, for example, from a material that corresponds to the substrate material FR-4 (Flame Retardant Type 4).
  • the core layer 101 may be, for example, but is not limited to, a glass epoxy substrate.
  • the core layer 101 is also a double-sided substrate with conductor layers (second conductor layer 120 and third conductor layer 130) provided on both sides.
  • the first insulating layer 102 is an insulating layer laminated on the upper surface (first main surface, the surface on the positive side of the Z axis) of the core layer 101.
  • a first conductor layer 110 is provided on the upper surface of the first insulating layer 102.
  • the second insulating layer 103 is an insulating layer laminated on the lower surface (the second main surface, the surface on the negative side of the Z axis) of the core layer 101.
  • a fourth conductor layer 140 is provided on the lower surface of the second insulating layer 103.
  • the first insulating layer 102 and the second insulating layer 103 are also called prepreg layers, and are made of, for example, but not limited to, epoxy resin.
  • the first insulating layer 102 and the second insulating layer 103 may also contain carbon fiber, etc.
  • the first conductor layer 110 is provided on the upper surface (the surface on the positive side of the Z axis) of the first insulating layer 102, and is a layer made of a metal material (e.g., copper foil).
  • the first conductor layer 110 is provided with, for example, wiring, signal lines, etc. for mounting devices (including, for example, the insulating device 107). For example, devices are mounted on the first conductor layer 110.
  • the first conductor layer 110 has a first conductor pattern 111 provided in the first voltage region R1 and a second conductor pattern 112 provided in the second voltage region R2.
  • the first conductor pattern 111 is formed with a third terminal 111a (conductor pattern) to which the terminal (first terminal) of the insulating device 107 is connected
  • the second conductor pattern 112 is formed with a fourth terminal 112a (conductor pattern) to which the terminal (second terminal) of the insulating device 107 is connected.
  • the first conductor pattern 111 and the second conductor pattern 112 are arranged, for example, at a distance D1 apart.
  • the distance D1 is an insulation distance, which is a creepage distance determined by the potential difference between the first voltage region R1 and the second voltage region R2 and the corresponding insulation standard.
  • the multilayer substrate 100 has an insulation region R3 of distance D1.
  • the second conductor layer 120 is provided between the core layer 101 and the first insulating layer 102, and is a layer made of a metal material (e.g., copper foil).
  • the second conductor layer 120 may include, for example, a ground layer.
  • the second conductor layer 120 has a first ground layer 121 provided in the first voltage region R1 and a second ground layer 122 provided in the second voltage region R2.
  • the third conductor layer 130 is provided between the core layer 101 and the second insulating layer 103, and is a layer made of a metal material (e.g., copper foil).
  • a power supply layer is provided on the third conductor layer 130.
  • the third conductor layer 130 has a first power supply layer 131 provided in the first voltage region R1 and a second power supply layer 132 provided in the second voltage region R2.
  • the fourth conductor layer 140 is provided on the lower surface (the surface on the negative Z-axis side) of the second insulating layer 103, and is a layer made of a metal material (e.g., copper foil).
  • the fourth conductor layer 140 is provided with, for example, wiring, signal lines, etc. for mounting devices. For example, devices are mounted on the fourth conductor layer 140.
  • the fourth conductor layer 140 has a first conductor pattern 141 provided in the first voltage region R1 and a second conductor pattern 142 provided in the second voltage region R2.
  • the first conductor pattern 141 and the second conductor pattern 142 are provided, for example, at a distance D1 apart.
  • the isolation device 107 is an isolation amplifier provided between different voltage domains, and is a device that exchanges signals between different voltage domains using a carrier wave while electrically isolating the different voltage domains.
  • the isolation device 107 is also called a digital isolator.
  • the method of transmitting signals in the isolation domain R3 in the isolation device 107 may be a magnetic coupling method or a capacitive coupling method.
  • the isolation device 107 is provided so as to straddle the isolation domain R3.
  • the frequency of the carrier wave of the isolation device 107 is, for example, 480 MHz, but may be lower than 480 MHz, such as 180 MHz, or may be higher than 480 MHz.
  • the multilayer substrate 100 further includes a planar pattern 123 and a linear pattern 124 on the second conductor layer 120, and a planar pattern 133 on the third conductor layer 130 to form a return path for the common mode current.
  • the surface patterns 123 and 133 are arranged so as to overlap at least partially in a planar view.
  • the surface pattern 133 is arranged so as to cover the entire surface pattern 123 in a planar view.
  • the planar pattern 123 is provided, for example, in the insulating region R3 of the second conductor layer 120, spaced apart from the first ground layer 121 and the second ground layer 122 in a planar view.
  • the planar pattern 123 is provided, in the insulating region R3, at a distance D2 from the second ground layer 122 in a planar view.
  • the planar pattern 123 is connected to the first ground layer 121 via the linear pattern 124.
  • the planar pattern 133 is provided, for example, in the insulating region R3 of the third conductor layer 130 in a plan view so as to protrude from the side surface of the second power layer 132 facing the first power layer 131 (the surface on the negative Y-axis side) toward the first power layer 131 in the plan view.
  • the planar pattern 133 is provided within the insulating region R3 in a plan view so as to be separated from the first power layer 131 by a distance D4.
  • the distance D4 may be equal to the distance D3 or may be smaller than the distance D3.
  • the planar pattern 133 may at least partially overlap the linear pattern 124 in a plan view.
  • the linear pattern 124 is a conductor pattern for forming an inductor, and is provided on a path (return path) between one of the first ground layer 121 and the first power supply layer 131 and one of the second ground layer 122 and the second power supply layer 132.
  • the linear pattern 124 connects the first ground layer 121 and the planar pattern 123 on the path.
  • the length of the linear pattern 124 in the Y-axis direction is, for example, a distance D3.
  • the linear pattern 124 has a meandering shape in a planar view, but the shape is not limited to this and may be, for example, a straight line.
  • the linear pattern 124 may be, for example, a spiral shape formed in another layer via a through hole or the like, as long as it satisfies the regulations on the insulation distance.
  • planar patterns 123 and 133 and the linear pattern 124 are arranged in positions that overlap the insulating device 107 in a planar view, but are not limited to this.
  • distances D1 to D4 are distances (insulation distances) parallel to the Y axis. Each of the distances D1 to D4 is set to a distance that satisfies the corresponding insulation standard or greater.
  • an inductor is formed by the linear pattern 124, and capacitance is formed by the capacitor (parallel plate capacitor) formed by the planar patterns 123 and 133, forming an LC resonant circuit (LC series resonant circuit) between the first voltage region R1 and the second voltage region R2.
  • the resonant frequency of the LC resonant circuit has a value corresponding to the signal transmission by the isolation device 107.
  • the resonant frequency of the LC resonant circuit is set to allow a signal of the carrier frequency used by the isolation device 107 to pass through.
  • the resonant frequency of the LC resonant circuit is set to match the carrier frequency used by the isolation device 107.
  • the configuration for forming the return path of the common mode current is not limited to the configuration shown in FIG. 4.
  • the conductor patterns of the second conductor layer 120 and the third conductor layer 130 in the insulating region R3 may be interchanged.
  • a planar surface pattern may be provided so as to protrude from the side surface (the surface on the negative Y-axis side) of the second ground layer 122 on the first ground layer 121 side to the first ground layer 121 side, and a surface pattern that overlaps with the planar pattern in a planar view may be formed on the third conductor layer 130, and the surface pattern of the third conductor layer 130 may be connected to the first power layer 131 by a linear pattern.
  • the linear pattern 124 may connect the surface pattern 123 and the second ground layer 122, and a planar surface pattern may be provided so as to protrude from the side surface (the surface on the positive Y-axis side) of the first power layer 131 on the second power layer 132 side to the second power layer 132 side.
  • the planar pattern 133 may be provided in the insulating region R3 of the third conductor layer 130, spaced apart from the first power layer 131 and the second power layer 132 in a plan view, and connected to the second power layer 132 via a linear pattern.
  • the linear pattern may be provided on at least one of the second conductor layer 120 and the third conductor layer 130.
  • Fig. 5 is a diagram showing an example of the propagation characteristics of a common mode current in the multilayer substrate 100 according to the present embodiment.
  • the multilayer board 100 is made of FR-4, a typical board material.
  • the thickness (length in the Z-axis direction) of the core layer 101 of the multilayer board 100 is 0.6 mm, and the thicknesses of the first insulating layer 102 and the second insulating layer 103 are 0.3 mm.
  • the multilayer board 100 configured in this manner has a transmission characteristic around 480 MHz, which is difficult to achieve with a capacitor alone.
  • the multilayer board 100 has a propagation characteristic that allows a signal of 480 MHz, which is the carrier frequency of the insulating device 107, to pass through.
  • a path (a return path for the common mode current) through which a signal (e.g., a common mode current) can easily pass from one of the first voltage region R1 and the second voltage region R2 to the other in the band of the carrier wave of the insulating device 107.
  • a signal e.g., a common mode current
  • the multilayer board 100 is able to pass high-frequency signals such as 480 MHz, which is difficult to achieve using only a capacitor.
  • the resonant frequency of the LC resonant circuit may be set, for example, to match the frequency of the carrier wave, or may be set so that the difference between the frequency of the carrier wave and the resonant frequency is equal to or less than a predetermined frequency.
  • the resonant frequency of the LC resonant circuit has a value corresponding to signal transmission by digital isolation, and the capacitance value and inductor value are determined so as to realize this value.
  • FIG. 6 is a diagram showing the configuration of a multilayer board 100a according to this embodiment.
  • FIG. 6(a) is a cross-sectional view of the multilayer board 100a
  • FIG. 6(b) is a plan view showing the second conductor layer 120
  • FIG. 6(c) is a plan view showing the third conductor layer 130.
  • the multilayer board 100a according to this embodiment differs from the multilayer board 100 according to embodiment 1 mainly in that two capacitors are formed.
  • the multilayer board 100a is an example of a board. In the following, it is assumed that the distance D7 is equal to or less than the distance D1.
  • the second conductor layer 120 has planar patterns 125 and 126.
  • the planar pattern 125 is a planar conductor pattern formed so as to protrude from the surface of the first ground layer 121a facing the second ground layer 122a (the surface on the positive side of the Y axis) toward the second ground layer 122a.
  • the planar pattern 126 is a planar conductor pattern formed so as to protrude from the surface of the second ground layer 122a facing the first ground layer 121a (the surface on the negative side of the Y axis) toward the first ground layer 121a.
  • the planar patterns 125 and 126 are provided at positions separated by a distance D5 (insulation distance).
  • At least one of the planar patterns 125 and 126 may be connected to the conductor pattern via a linear pattern.
  • the planar pattern 125 may be connected to the first ground layer 121a via a linear pattern.
  • the third conductor layer 130 has planar patterns 134 and 135 and a linear pattern 136.
  • planar patterns 134 and 135 are spaced apart from the first power layer 131a and the second power layer 132a in a plan view within the insulating region R3, and are connected by the linear pattern 136.
  • the planar pattern 134 is a conductor pattern for forming a capacitor using the planar pattern 125 and a portion of the first ground layer 121a.
  • the first power supply layer 131a is formed with a U-shaped recess 131a1 recessed from the surface on the positive side of the Y axis in the negative direction of the Y axis, and at least a portion of the planar pattern 134 is provided in the recess 131a1 such that the distance from the first power supply layer 131a is distance D6.
  • the planar pattern 134 is provided so as to overlap with a portion of the first ground layer 121a and the planar pattern 125 in a planar view. It is sufficient that the planar pattern 134 overlaps at least the planar pattern 125 in a planar view.
  • the planar pattern 135 is a conductor pattern for forming a capacitor using the planar pattern 126 and a portion of the second ground layer 122a.
  • the second power supply layer 132a is formed with a U-shaped recess 132a1 recessed from the surface on the negative Y-axis side toward the positive Y-axis direction, and at least a portion of the planar pattern 135 is provided in the recess 132a1 such that the distance from the second power supply layer 132a is distance D6.
  • the planar pattern 135 is provided so as to overlap with a portion of the second ground layer 122a and the planar pattern 126 in a planar view. It is sufficient that the planar pattern 135 overlaps at least the planar pattern 126 in a planar view.
  • Linear pattern 136 is a pattern for forming an inductor, and in the example of FIG. 6, is provided between planar patterns 134 and 135 in a plan view, connecting planar patterns 134 and 135.
  • the length of linear pattern 136 in the Y-axis direction is, for example, distance D7.
  • Distance D7 may be, for example, equal to distance D5.
  • the multilayer substrate 100a has a planar surface pattern 134 on the first voltage region R1 side of the third conductor layer 130 in the insulating region R3, and a planar surface pattern 135 on the second voltage region R2 side, with the surface patterns 134 and 135 electrically connected by a meandering linear pattern 136.
  • an LC resonant circuit can be formed between the first voltage region R1 and the second voltage region R2.
  • a path (a return path for a common mode current) through which a signal can easily pass between the first voltage region R1 and the second voltage region R2 according to the carrier band of the insulating device 107 can be created.
  • it since there are two capacitances in the leakage current passage path, it functions as double insulation and can improve the voltage resistance of the multilayer substrate 100a.
  • Such a multilayer substrate 100a can be used in applications where high voltage resistance is required.
  • the surface patterns 134 and 135 have the same area in a plan view, but may be different from each other, for example.
  • planar patterns 125 and 126 do not need to be provided.
  • the conductor patterns of the second conductor layer 120 and the third conductor layer 130 may be interchanged.
  • the planar patterns 134 and 135 and the linear pattern 136 may be formed on the second conductor layer 120
  • the planar patterns 125 and 126 may be formed on the third conductor layer 130.
  • the above distances D5 to D7 are distances (insulation distances) parallel to the Y-axis.
  • Each of the distances D5 to D7 is set to a distance that satisfies the corresponding insulation standard or more.
  • the distance D6 is set to a distance that satisfies the corresponding insulation standard at a voltage that is half the rated voltage of the insulating device 107.
  • FIG. 7 is a diagram showing the configuration of multilayer board 100b according to this embodiment.
  • FIG. 7(a) is a cross-sectional view of multilayer board 100b
  • FIG. 7(b) is a plan view showing second conductor layer 120
  • FIG. 7(c) is a plan view showing third conductor layer 130.
  • Multilayer board 100b according to this embodiment differs from multilayer board 100 according to embodiment 1 in that a capacitor is formed by the conductor patterns (planar patterns 127 and 137) connected to the ground layer.
  • Multilayer board 100b is an example of a board.
  • the multilayer substrate 100b has a planar pattern 127 on the second conductor layer 120, and a planar pattern 137, a linear pattern 138, and a land 139 on the third conductor layer 130 to form a return path for the common mode current.
  • the multilayer substrate 100b also has a through hole 150 that penetrates the core layer 101 in the second voltage region R2.
  • the surface patterns 127 and 137 are arranged so as to overlap at least partially in a planar view.
  • the surface pattern 127 is arranged so as to cover the entire surface pattern 137 in a planar view.
  • the planar pattern 127 is arranged, for example, in the insulating region R3 of the second conductor layer 120 so as to protrude from the side surface of the first ground layer 121b facing the second ground layer 122b (the surface on the positive Y-axis side) toward the second ground layer 122b.
  • the planar pattern 127 is arranged, in plan view, within the insulating region R3 and at a distance D8 from the second ground layer 122b.
  • the planar pattern 127 may, for example, at least partially overlap the linear pattern 138 in plan view.
  • the planar pattern 137 is spaced apart from the first power supply layer 131b and the second power supply layer 132b in a planar view.
  • the planar pattern 137 is located within the insulating region R3 and is spaced a distance D9 from the first power supply layer 131b in a planar view.
  • the planar pattern 137 is connected to the second ground layer 122b via the linear pattern 138, the land 139, and the through hole 150.
  • Linear pattern 138 is a pattern for forming an inductor, and in the example of FIG. 7, it connects planar pattern 137 and land 139.
  • the length of linear pattern 138 in the Y-axis direction is, for example, distance D10.
  • the land 139 is a conductor pattern electrically connected to the through hole 150.
  • a recess 132b1 is formed in the second power supply layer 132b, recessed in a U-shape from the surface on the negative side of the Y axis toward the positive direction of the Y axis, and at least a portion of the land 139 is provided in the recess 132b1 such that the distance from the second power supply layer 132b is distance D11.
  • the land 139 is provided so as to overlap a portion of the second power supply layer 132b in a plan view.
  • the through hole 150 penetrates the core layer 101 of the multilayer board 100 in the stacking direction (Z-axis direction) and connects the land 139 to the second ground layer 122b. In other words, the through hole 150 connects the second ground layer 122b to the planar pattern 137. This makes the second ground layer 122b and the planar pattern 137 at the same potential.
  • distances D8 to D11 are distances (insulation distances) parallel to the Y axis. Each of the distances D8 to D11 is set to a distance that satisfies the corresponding insulation standard or greater.
  • an inductor is formed by the linear pattern 138
  • a capacitance is formed by the capacitor formed by the planar patterns 127 and 137
  • an LC resonant circuit is formed between the first voltage region R1 and the second voltage region R2.
  • the conductor patterns of the second conductor layer 120 and the third conductor layer 130 in the insulating region R3 may be interchanged.
  • the planar pattern 137, the linear pattern 138, and the land 139 may be formed in the second conductor layer 120
  • the planar pattern 127 may be formed in the third conductor layer 130.
  • the land 139 and the through hole 150 are not limited to being provided in the second voltage region R2, and may be provided in the first voltage region R1.
  • the planar pattern 127 is provided, for example, in the insulating region R3 of the second conductor layer 120 so as to protrude from the side surface of the second ground layer 122b on the first ground layer 121b side (the surface on the negative Y-axis side) to the first ground layer 121b side.
  • FIG. 8 is a diagram showing the configuration of a double-sided board 100c according to this embodiment.
  • FIG. 8(a) is a cross-sectional view of the double-sided board 100c
  • FIG. 8(b) is a plan view showing the second conductor layer 120
  • FIG. 8(c) is a plan view showing the third conductor layer 130.
  • the double-sided board 100c according to this embodiment differs from the multilayer board 100 according to the first embodiment in that it does not include the first insulating layer 102 and the second insulating layer 103.
  • the double-sided board 100c is also called a two-layer board and is an example of a board. Note that FIG. 8(b) and (c) are substantially the same as FIG. 4(b) and (c), and therefore the description will be omitted. Also, in FIG. 8(b) and (c), the third terminal 121c and the fourth terminal 122c are omitted from illustration.
  • the double-sided substrate 100c includes a core layer 101 and an insulating device 107.
  • the core layer 101 has a second conductor layer 120 on the first main surface (the surface on the positive side of the Z axis) and a third conductor layer 130 on the second main surface (the surface on the negative side of the Z axis).
  • the second conductor layer 120 has a first ground layer 121 provided in the first voltage region R1 and a second ground layer 122 provided in the second voltage region R2.
  • a third terminal 121c (conductor pattern) to which the terminal (first terminal) of the isolation device 107 is connected is formed in the first ground layer 121
  • a fourth terminal 122c (conductor pattern) to which the terminal (second terminal) of the isolation device 107 is connected is formed in the second ground layer 122.
  • the second conductor layer 120 may be provided with a mixture of wiring, signal lines, ground layers, etc. for implementing a device (including, for example, the isolation device 107).
  • the third conductor layer 130 has a first power supply layer 131 provided in the first voltage region R1 and a second power supply layer 132 provided in the second voltage region R2.
  • the third conductor layer 130 may be provided with a mixture of, for example, power supply lines, wiring for implementing devices, signal lines, etc.
  • the present disclosure may be realized as a method for designing a substrate on which a digital isolator is mounted.
  • the design method includes a step of acquiring the frequency of a carrier wave used by the digital isolator mounted on the substrate, and a step of determining the shapes of the planar pattern and the linear pattern so that the acquired frequency of the carrier wave matches the resonant frequency of the LC series resonant circuit.
  • first voltage region R1 and the second voltage region R2 are regions with different voltages, but this is not limited thereto, and the first voltage region R1 and the second voltage region may be regions with the same potential.
  • the second conductor layer 120 and the third conductor layer 130 in the above-mentioned first embodiment may be interchanged. That is, the first ground layer 121 and the second ground layer 122 may be interchanged with the first power supply layer 131 and the second power supply layer 132.
  • the first ground layer 121, the second ground layer 122, the first power supply layer 131 and the second power supply layer 132 are each a layer to which a DC potential is supplied. For example, whether the second conductor layer 120 functions as a ground layer or a power supply layer is determined after various circuits and the like are mounted on the multilayer board 100. The same applies to the other embodiments.
  • first ground layer 121 and the second ground layer 122 are provided on the second conductor layer 120, and the first power supply layer 131 and the second power supply layer 132 are provided on the third conductor layer 130, but this is not limited to the example.
  • the first ground layer 121 and the second ground layer 122, and the first power supply layer 131 and the second power supply layer 132 may each be provided on any of the first conductor layer 110, the second conductor layer 120, the third conductor layer 130, and the fourth conductor layer 140.
  • planar patterns are provided on one main surface of the core layer 101, but the number of planar patterns is not limited to this, and for example, three or more planar patterns may be provided on the one main surface.
  • linear patterns two or more linear patterns may be provided on the one main surface.
  • At least one part or all of the planar pattern and the linear pattern may be provided in a position that does not overlap with the insulating device 107 in a plan view.
  • the substrate is described as being a two-layer substrate or a four-layer substrate, but this is not limited thereto, and the substrate may be a three-layer substrate or a substrate having five or more layers.
  • the substrates in each of the above embodiments may be distributed without the insulating device 107 mounted thereon, or may be distributed with the insulating device 107 mounted thereon.
  • a path (common mode current return path) can be created that allows a signal (e.g., a common mode current) to easily pass from one of the first voltage domain and the second voltage domain to the other in the carrier band of the digital isolator.
  • a signal e.g., a common mode current
  • the first ground layer is formed on the first main surface
  • the second power supply layer is formed on the second main surface
  • the linear pattern connects between the first planar pattern and the first ground layer, or between the second planar pattern and the second power layer, in the substrate described in Technology 2.
  • the core layer is provided with a through hole penetrating from the first main surface to the second main surface, the first planar pattern is formed on the second main surface, and the linear pattern connects the first planar pattern and the first ground layer via the through hole, in the board described in Technology 5.
  • a path can be formed between the first ground layer and the second ground layer by using a configuration with a through hole.
  • the plurality of planar patterns further includes a third planar pattern and a fourth planar pattern, the two planar patterns among the plurality of planar patterns being a first planar pattern connected to one of the first ground layer and the first power layer, and a second planar pattern connected to one of the second ground layer and the second power layer, at least a portion of the third planar pattern being arranged to overlap the first planar pattern in the planar view, at least a portion of the fourth planar pattern being arranged to overlap the second planar pattern in the planar view, and the linear pattern connecting between the third planar pattern and the fourth planar pattern.
  • the common mode current can be more reliably fed back to the voltage domain of the signal source by an LC resonant circuit with a passband corresponding to the carrier frequency, so that the occurrence of electromagnetic interference can be more reliably suppressed.
  • the two capacitors function as double insulation, improving the voltage resistance of the multilayer board.
  • This disclosure is useful for substrates on which digital isolators are mounted as insulating devices.

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Abstract

Provided is a substrate on which a digital isolator for electrically separating a first voltage region (R1) and a second voltage region (R2) in a plan view is mounted, the substrate comprising: a core layer (101); a first ground layer (121) and a second ground layer (122) on a first main surface of the core layer (101); a first power supply layer (131) and a second power supply layer (132) on a second main surface of the core layer (101); two planar patterns (123, 133) at least partially overlapping each other in the plan view; and a linear pattern (124). The resonance frequency of a resonance circuit including the two planar patterns (123, 133) and the linear pattern (124) has a value corresponding to signal transmission by the digital isolator.

Description

基板substrate

 本開示は、デジタルアイソレータが実装される基板に関する。 This disclosure relates to a substrate on which a digital isolator is mounted.

 複数の導体パターンを積層して積層基板を形成する技術がある(特許文献1を参照)。このような積層基板における同一基板内において、高電圧で動作する部分と低電圧で動作する部分とが混在していたり、低電圧の機器でも使用環境により高電圧・大電流が印加される虞がある場合には、低電圧の回路に高電圧が印加されることで破損したり、感電する危険がある。また、2点間でGND電位が異なる状態が発生すると、一方のGNDからもう一方のGNDへと電流が流れる経路が発生する。このGNDループに電流が流れると回路や機器が故障・破損する原因となり、ノイズの発生や増幅の要因となる。これらの対策として、電気回路の2つのポイント間に電流が流れないよう電気的に分離、つまり絶縁を行う必要がある。 There is a technology for forming a laminated board by stacking multiple conductor patterns (see Patent Document 1). In such a laminated board, if there are parts that operate at high voltage and parts that operate at low voltage within the same board, or if there is a risk of high voltage and large current being applied to low-voltage equipment due to the usage environment, there is a risk of damage or electric shock due to the high voltage being applied to the low-voltage circuit. In addition, if a state occurs in which the GND potential is different between two points, a path is created through which current flows from one GND to the other GND. If current flows through this GND loop, it can cause the circuit or equipment to break down or break, and can be a factor in the generation and amplification of noise. To address these issues, it is necessary to electrically separate, or insulate, the two points in the electric circuit so that no current flows between them.

 従来の絶縁素子は、発光素子(例えば、LED(Light Emitting Diode))と受光素子とを組み合わせた光アイソレータが主流であったが、製品寿命および信頼性の課題があり、デジタルアイソレータへと移行しつつある(特許文献2を参照)。  Conventional insulating elements have mainly been optical isolators that combine a light-emitting element (e.g., an LED (Light Emitting Diode)) with a light-receiving element, but due to issues with product life and reliability, there is a shift towards digital isolators (see Patent Document 2).

 デジタルアイソレータでは、絶縁領域の信号の伝達方法により、磁気結合法と容量結合法とがある(特許文献3、4を参照)。 Digital isolators are classified into magnetic coupling and capacitive coupling, depending on the method of signal transmission in the insulating area (see Patent Documents 3 and 4).

特許第5768941号公報Patent No. 5768941 特開2018-011173号公報JP 2018-011173 A 米国特許第6054780号明細書U.S. Pat. No. 6,054,780 特表2020-515192号公報Special Publication No. 2020-515192

 各特許文献の技術では、エミッションと呼ばれる電磁障害(EMI:Electro Magnetic Interference)を引き起こす可能性がある。 The technologies described in each patent document may cause electromagnetic interference (EMI: Electro Magnetic Interference), known as emission.

 本開示の一態様に係る基板は、平面視において第1電圧領域および第2電圧領域を有し、前記第1電圧領域および前記第2電圧領域を電気的に分離するデジタルアイソレータが実装される基板であって、コア層と、導電体であり、前記コア層の第1主面上において、前記第1電圧領域に設けられる第1グランド層と、導電体であり、前記コア層の前記第1主面上において、前記第2電圧領域に設けられる第2グランド層と、前記コア層の第2主面上において、前記第1電圧領域に設けられる第1電源層と、前記コア層の前記第2主面上において、前記第2電圧領域に設けられる第2電源層と、導電体であり、前記基板の平面視において少なくとも一部が互いに重なるように設けられた2つの面状パターンを含む複数の面状パターンと、前記平面視において線状である線状パターンと、を備え、前記線状パターンは、前記第1グランド層および前記第1電源層の一方と、前記第2グランド層および前記第2電源層の一方とを結ぶ経路上に設けられ、前記線状パターンは、前記2つの面状パターンのうち一方と接続され、前記2つの面状パターンと前記線状パターンとを含む共振回路の共振周波数は、前記デジタルアイソレータによる信号伝達に対応した値を有する。 A substrate according to one embodiment of the present disclosure has a first voltage region and a second voltage region in a plan view, and is a substrate on which a digital isolator is mounted to electrically isolate the first voltage region and the second voltage region, and includes a core layer, a first ground layer which is a conductor and is provided in the first voltage region on the first main surface of the core layer, a second ground layer which is a conductor and is provided in the second voltage region on the first main surface of the core layer, a first power supply layer which is provided in the first voltage region on the second main surface of the core layer, and a second ground layer which is a conductor and is provided in the second voltage region on the second main surface of the core layer. The digital isolator includes a power supply layer, a plurality of planar patterns including two planar patterns that are conductors and are arranged so that at least a portion of the planar patterns overlap each other in a planar view of the board, and a linear pattern that is linear in the planar view, the linear pattern is arranged on a path that connects one of the first ground layer and the first power supply layer and one of the second ground layer and the second power supply layer, the linear pattern is connected to one of the two planar patterns, and the resonant frequency of a resonant circuit including the two planar patterns and the linear pattern has a value corresponding to signal transmission by the digital isolator.

 本開示の一態様によれば、デジタルアイソレータが実装される基板において、電磁障害が発生することを抑制することができる基板を実現することができる。 According to one aspect of the present disclosure, it is possible to realize a board on which a digital isolator is mounted that can suppress the occurrence of electromagnetic interference.

図1は、絶縁素子の信号経路を示す模式図である。FIG. 1 is a schematic diagram showing a signal path of an isolation element. 図2は、従来例の多層基板の断面図である。FIG. 2 is a cross-sectional view of a conventional multilayer board. 図3は、実施の形態1に係る多層基板の層構成を示す概略斜視図である。FIG. 3 is a schematic perspective view showing a layer structure of the multilayer board according to the first embodiment. 図4は、実施の形態1に係る多層基板の構成を示す図である。FIG. 4 is a diagram showing a configuration of a multilayer substrate according to the first embodiment. 図5は、実施の形態1に係る積層基板のコモンモード電流の伝搬特性の一例を示す図である。FIG. 5 is a diagram showing an example of propagation characteristics of a common mode current in the multilayer substrate according to the first embodiment. 図6は、実施の形態2に係る多層基板の構成を示す図である。FIG. 6 is a diagram showing a configuration of a multilayer substrate according to the second embodiment. 図7は、実施の形態3に係る多層基板の構成を示す図である。FIG. 7 is a diagram showing a configuration of a multilayer substrate according to the third embodiment. 図8は、実施の形態4に係る両面基板の構成を示す図である。FIG. 8 is a diagram showing the configuration of a double-sided board according to the fourth embodiment.

 (本開示に至った経緯)
 本開示に説明に先立ち、本開示に至った経緯について図1および図2を参照しながら説明する。図1は、絶縁素子の信号経路を示す模式図である。図1の(a)は、絶縁方式が磁気方式である場合の回路イメージ図であり、参考に図示している。図1の(b)は、絶縁素子の信号経路を示す。図2は、従来例の多層基板1000の断面図である。図2の(a)は、多層基板1000の断面図であり、図2の(b)は、第2導体層120を示す平面図であり、図2の(c)は、第3導体層130を示す平面図である。図2の(a)に示す第2導体層120の断面図は、図2の(b)に示す切断線IIa1-IIa1で第2導体層120を切断した場合の断面図を示し、図2の(a)に示す第3導体層130の断面図は、図2の(c)に示す切断線IIa2-IIa2で第3導体層130を切断した場合の断面図を示す。なお、切断線IIa1-IIa1と切断線IIa2-IIa2とは平面視で重なる。また、以降に示す図4、図6~図8における、図の(a)に示す第2導体層120および第3導体層130の断面図と、図の(b)および(c)に示す切断線との関係は、図2と同様であるので説明を省略する。
(Background to this disclosure)
Prior to describing this disclosure, the background to the present disclosure will be described with reference to Figs. 1 and 2. Fig. 1 is a schematic diagram showing a signal path of an isolation element. Fig. 1(a) is a circuit image diagram when the isolation method is a magnetic method, and is illustrated for reference. Fig. 1(b) shows a signal path of an isolation element. Fig. 2 is a cross-sectional view of a multilayer substrate 1000 of a conventional example. Fig. 2(a) is a cross-sectional view of the multilayer substrate 1000, Fig. 2(b) is a plan view showing a second conductor layer 120, and Fig. 2(c) is a plan view showing a third conductor layer 130. The cross-sectional view of the second conductor layer 120 shown in FIG. 2(a) shows a cross-sectional view of the second conductor layer 120 cut along the cutting line IIa1-IIa1 shown in FIG. 2(b), and the cross-sectional view of the third conductor layer 130 shown in FIG. 2(a) shows a cross-sectional view of the third conductor layer 130 cut along the cutting line IIa2-IIa2 shown in FIG. 2(c). Note that the cutting lines IIa1-IIa1 and IIa2-IIa2 overlap in plan view. In addition, the relationship between the cross-sectional views of the second conductor layer 120 and the third conductor layer 130 shown in FIG. 4, FIG. 6 to FIG. 8 shown below and the cutting lines shown in FIG. 2(b) and FIG. 6(c) is the same as that shown in FIG. 2, so the description will be omitted.

 なお、多層基板1000の層構成などについては実施の形態で説明する。 The layer structure of the multilayer substrate 1000 will be explained in the embodiment.

 図1の(b)に示すように、デジタルアイソレータは、基本的には絶縁領域R3(図2の(a)を参照)を挟み、電位が異なる領域(V1の領域であり図2の(a)に示す第1電圧領域R1およびV2の領域であり図2の(a)に示す第2電圧領域R2)間をトランス又は容量で形成した差動伝送経路上において、高周波のデジタル信号を用いて信号の交換を行う。この際、差動伝送経路上のノーマルモード信号以外にコモンモード電流が発生する。このコモンモード電流が漏洩電流(迷走電流)となるが、デジタルアイソレータに絶縁領域があるので、漏洩電流が伝搬先の電圧領域から信号元の電圧領域へ帰還できない虞がある。デジタルアイソレータのエミッションは、帰還できない漏洩電流が絶縁領域端部から放射ノイズ(エミッション)として拡散する現象である。なお、第1電圧領域R1におけるグランドはGND1であり、第2電圧領域R2におけるグランドはGND2として図示している。 As shown in FIG. 1B, a digital isolator basically exchanges signals using high-frequency digital signals on a differential transmission path formed by a transformer or capacitor between regions of different potentials (the first voltage region R1 shown in FIG. 2A, which is the region of V1, and the second voltage region R2 shown in FIG. 2A, which is the region of V2) sandwiching an insulating region R3 (see FIG. 2A). At this time, a common mode current is generated in addition to the normal mode signal on the differential transmission path. This common mode current becomes a leakage current (stray current), but since the digital isolator has an insulating region, there is a risk that the leakage current cannot return from the voltage region to which it is propagated to the voltage region from which the signal originates. The emission of a digital isolator is a phenomenon in which the leakage current that cannot be returned diffuses as radiated noise (emission) from the end of the insulating region. Note that the ground in the first voltage region R1 is GND1, and the ground in the second voltage region R2 is illustrated as GND2.

 漏洩電流によるエミッションの発生を低減するには、異なる電圧領域の障壁を跨いで電流を帰還させる経路を確保すればよい。 To reduce emissions caused by leakage current, it is necessary to provide a path for returning current across the barrier between different voltage domains.

 一つの方法は、異なる電圧領域の障壁を跨いで安全な定格のコンデンサを接続する方法であり、他の一つの方法は、積層基板の内部層のグランド・プレーンと電源プレーンとを積層基板の絶縁領域R3まで延ばして重なるコンデンサを形成する方法である。当該コンデンサは、第1グランド層1121と接続される面状パターン1123と、第2電源層1132と接続される面状パターン1133とにより形成される。なお、当該コンデンサは、第2グランド層1122と接続される面状パターンと、第1電源層1131と接続される面状パターンとにより形成されてもよい。 One method is to connect a safe-rated capacitor across the barrier between different voltage domains, and the other is to form an overlapping capacitor by extending the ground plane and power plane of the internal layers of the laminate board to the insulating region R3 of the laminate board. The capacitor is formed by a planar pattern 1123 connected to the first ground layer 1121 and a planar pattern 1133 connected to the second power layer 1132. The capacitor may also be formed by a planar pattern connected to the second ground layer 1122 and a planar pattern connected to the first power layer 1131.

 2つの方法のうちコンデンサを接続する方法では、コンデンサの寄生インダクタンスの影響で高周波の搬送波に対応が難しいこと、コンデンサの配置場所と絶縁素子とで形成されるコモンモード電流のループ面積が大きくなることなどの問題がある。一般にエミッションは、ループに流れる電流の大きさおよび面積に比例するため、ループ面積が大きくなるとエミッションが増加する。また、内部層でコンデンサを形成する方法では、形成されるコンデンサ容量が基板の厚みに依存すること、対応する絶縁規格においては基板厚みの制約があることが知られている。例えば、代表的な絶縁規格であるIEC62368(旧:IEC60950)などでは、異なる電位の導体部間の単層の厚みが0.4mm以上と指定されている。そのため、内層コンデンサを形成して得られる信号の通過特性(周波数特性)が絶縁素子で使用される搬送波の周波数と合わなくなる問題がある。 Of the two methods, the method of connecting a capacitor has problems such as difficulty in handling high-frequency carrier waves due to the influence of the parasitic inductance of the capacitor, and the loop area of the common mode current formed by the placement of the capacitor and the insulating element becoming larger. Generally, emissions are proportional to the magnitude and area of the current flowing through the loop, so the larger the loop area, the higher the emissions. In addition, when forming a capacitor in an internal layer, it is known that the capacitance of the formed capacitor depends on the thickness of the board, and that the corresponding insulation standard places restrictions on the board thickness. For example, the representative insulation standard IEC62368 (formerly IEC60950) specifies that the thickness of a single layer between conductors of different potentials must be 0.4 mm or more. This causes a problem that the signal passing characteristics (frequency characteristics) obtained by forming an internal layer capacitor do not match the frequency of the carrier wave used in the insulating element.

 そこで、本願発明者は、デジタルアイソレータが実装される基板において、電磁障害が発生することを抑制することができる基板として、デジタルアイソレーションのコモンモード電流を効率よく帰還させることができる基板(基板構造)について鋭意検討を行い、以下に説明する基板を創案した。 The inventors of the present application therefore conducted extensive research into a board (board structure) that can efficiently return the common mode current of digital isolation, as a board on which a digital isolator is mounted, to prevent the occurrence of electromagnetic interference, and came up with the board described below.

 以下、実施の形態について、図面を参照しながら具体的に説明する。 The following describes the embodiment in detail with reference to the drawings.

 なお、以下で説明する実施の形態は、いずれも包括的または具体的な例を示すものである。以下の実施の形態で示される数値、形状、構成要素、構成要素の配置位置および接続形態などは、一例であり、本開示を限定する趣旨ではない。また、以下の実施の形態における構成要素のうち、独立請求項に記載されていない構成要素については、任意の構成要素として説明される。 The embodiments described below are all comprehensive or specific examples. The numerical values, shapes, components, component placement positions, and connection forms shown in the following embodiments are merely examples and are not intended to limit the present disclosure. Furthermore, among the components in the following embodiments, components that are not described in an independent claim are described as optional components.

 また、各図は、模式図であり、必ずしも厳密に図示されたものではない。したがって、例えば、各図において縮尺などは必ずしも一致しない。また、各図において、実質的に同一の構成については同一の符号を付しており、重複する説明は省略又は簡略化する。 In addition, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match. In addition, in each figure, the same reference numerals are used for substantially the same configurations, and duplicate explanations are omitted or simplified.

 また、本明細書および図面において、X軸、Y軸およびZ軸は、右手系の三次元直交座標系の三軸を示している。各実施の形態では、Z軸方向を多層基板の積層方向(厚み方向)としている。また、本明細書において、「平面視」とは、多層基板の積層方向に沿って多層基板を見ることを意味する。 In addition, in this specification and the drawings, the X-axis, Y-axis, and Z-axis represent the three axes of a right-handed three-dimensional Cartesian coordinate system. In each embodiment, the Z-axis direction is the stacking direction (thickness direction) of the multilayer board. In addition, in this specification, "planar view" means viewing the multilayer board along the stacking direction of the multilayer board.

 また、本明細書において、平行、一致などの要素間の関係性を示す用語、および、線状、ミアンダ状などの要素の形状を示す用語、並びに、数値、および、数値範囲は、厳格な意味のみを表す表現ではなく、実質的に同等な範囲、例えば数%程度(あるいは、10%程度)の差異をも含むことを意味する表現である。 In addition, in this specification, terms indicating the relationship between elements, such as parallel and coincident, terms indicating the shape of elements, such as linear and meandering, as well as numerical values and numerical ranges, are not expressions that express only the strict meaning, but are expressions that include a substantially equivalent range, for example, a difference of about a few percent (or about 10%).

 また、本明細書において、「〇〇上(例えば、主面上)」、「上方」および「下方」という用語は、絶対的な空間認識における上方向(鉛直上方)および下方向(鉛直下方)を指すものではなく、積層構成における積層順を基に相対的な位置関係により規定される用語として用いる。また、「〇〇上(例えば、主面上)」、「上方」および「下方」という用語は、2つの構成要素が互いに間隔をあけて配置されて2つの構成要素の間に別の構成要素が存在する場合のみならず、2つの構成要素が互いに接する状態で配置される場合にも適用される。 In addition, in this specification, the terms "on XX (e.g., on the main surface)," "above," and "below" do not refer to the upward direction (vertically above) and downward direction (vertically below) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in the stacked configuration. Furthermore, the terms "on XX (e.g., on the main surface)," "above," and "below" apply not only to cases where two components are arranged with a gap between them and another component exists between the two components, but also to cases where two components are arranged in contact with each other.

 また、本明細書において、「第1」、「第2」などの序数詞は、特に断りの無い限り、構成要素の数又は順序を意味するものではなく、同種の構成要素の混同を避け、区別する目的で用いられている。 In addition, in this specification, ordinal numbers such as "first" and "second" do not refer to the number or order of components, unless otherwise specified, but are used for the purpose of avoiding confusion between and distinguishing between components of the same type.

 また、各構成要素の「接続」とは、電気的な接続を意味し、2つの構成要素が直接的に接続される場合だけでなく、2つの構成要素の間に他の構成要素を挿入した状態で2つの構成要素が間接的に接続される場合も含まれる。 Furthermore, the "connection" of each component means an electrical connection, and includes not only cases where two components are directly connected, but also cases where two components are indirectly connected with another component inserted between them.

 (実施の形態1)
 以下、本実施の形態に係る多層基板について、図3~図5を参照しながら説明する。
(Embodiment 1)
The multilayer substrate according to the present embodiment will be described below with reference to FIGS.

 [1.多層基板の構成]
 図3は、本実施の形態に係る多層基板100の層構成を示す概略斜視図である。図4は、本実施の形態に係る多層基板100の構成を示す図である。図4の(a)は、多層基板100の断面図であり、図4の(b)は、第2導体層120を示す平面図であり、図4の(c)は、第3導体層130を示す平面図である。
[1. Configuration of multi-layer board]
Fig. 3 is a schematic perspective view showing the layer configuration of the multilayer substrate 100 according to the present embodiment. Fig. 4 is a diagram showing the configuration of the multilayer substrate 100 according to the present embodiment. Fig. 4(a) is a cross-sectional view of the multilayer substrate 100, Fig. 4(b) is a plan view showing the second conductor layer 120, and Fig. 4(c) is a plan view showing the third conductor layer 130.

 図3では、各導体層と、絶縁デバイス107とを図示し、便宜上、他の構成要素の図示を省略している。また、図3では、絶縁デバイス107が多層基板100に実装されていない状態を図示しており、図4では、絶縁デバイス107が多層基板100に実装されている状態を図示している。また、本実施の形態では、代表的な多層基板100として、4層基板を用いる例について説明する。 In FIG. 3, each conductor layer and the insulating device 107 are illustrated, and for convenience, other components are not illustrated. Also, in FIG. 3, the insulating device 107 is illustrated in a state where it is not mounted on the multilayer substrate 100, and in FIG. 4, the insulating device 107 is illustrated in a state where it is mounted on the multilayer substrate 100. Also, in this embodiment, an example in which a four-layer substrate is used as a representative multilayer substrate 100 will be described.

 絶縁デバイス107が実装された多層基板100は、高電圧で動作する部分(回路)と、低電圧で動作する部分(回路)とが混在する機器などにおいて、低電圧で動作する部分に高電圧が印加され破損することなどを抑制するために用いられる。機器は、例えば、電源、モータなどの産業機器、医療機器、ハイブリット自動車に搭載されるECU(Electronic Control Unit:電子制御装置)などの車載機器などが例示されるが、これに限定されない。 The multilayer board 100 on which the insulating device 107 is mounted is used in equipment that has a mixture of parts (circuits) that operate at high voltages and parts (circuits) that operate at low voltages, to prevent damage caused by the application of high voltage to parts that operate at low voltages. Examples of equipment include, but are not limited to, industrial equipment such as power supplies and motors, medical equipment, and in-vehicle equipment such as ECUs (Electronic Control Units) installed in hybrid automobiles.

 図3および図4に示すように、多層基板100は、異なる電圧領域である第1電圧領域R1および第2電圧領域R2と、第1電圧領域R1および第2電圧領域R2の間の絶縁領域R3とを有する。絶縁領域R3(3次元状の領域)よりY軸マイナス側の領域が第1電圧領域R1(3次元状の領域)であり、絶縁領域R3よりY軸プラス側の領域が第2電圧領域R2(3次元状の領域)である。 As shown in Figures 3 and 4, the multilayer substrate 100 has a first voltage region R1 and a second voltage region R2 which are different voltage regions, and an insulating region R3 between the first voltage region R1 and the second voltage region R2. The region on the negative Y-axis side of the insulating region R3 (three-dimensional region) is the first voltage region R1 (three-dimensional region), and the region on the positive Y-axis side of the insulating region R3 is the second voltage region R2 (three-dimensional region).

 また、多層基板100は、コア層101と、第1絶縁層102と、第2絶縁層103と、絶縁デバイス107とを備える。多層基板100は、第2絶縁層103、コア層101および第1絶縁層102がこの順に積層されており、絶縁デバイス107は、第1絶縁層102上に実装される。多層基板100は、基板の一例である。 The multilayer substrate 100 also includes a core layer 101, a first insulating layer 102, a second insulating layer 103, and an insulating device 107. The multilayer substrate 100 includes the second insulating layer 103, the core layer 101, and the first insulating layer 102 stacked in this order, and the insulating device 107 is mounted on the first insulating layer 102. The multilayer substrate 100 is an example of a substrate.

 コア層101は、多層基板100が備える絶縁基板であり、例えば、樹脂基板である。コア層101は、例えば、基板材料であるFR-4(Flame Retardant Type 4)に対応した材料により形成されてもよい。コア層101は、例えば、ガラスエポキシ基板であってもよいがこれに限定されない。また、コア層101は、両面に導体層(第2導体層120および第3導体層130)が設けられる両面基板である。 The core layer 101 is an insulating substrate provided in the multilayer substrate 100, and is, for example, a resin substrate. The core layer 101 may be formed, for example, from a material that corresponds to the substrate material FR-4 (Flame Retardant Type 4). The core layer 101 may be, for example, but is not limited to, a glass epoxy substrate. The core layer 101 is also a double-sided substrate with conductor layers (second conductor layer 120 and third conductor layer 130) provided on both sides.

 第1絶縁層102は、コア層101の上面(第1主面であり、Z軸プラス側の面)に積層して設けられる絶縁性を有する層である。第1絶縁層102の上面には第1導体層110が設けられる。 The first insulating layer 102 is an insulating layer laminated on the upper surface (first main surface, the surface on the positive side of the Z axis) of the core layer 101. A first conductor layer 110 is provided on the upper surface of the first insulating layer 102.

 第2絶縁層103は、コア層101の下面(第2主面であり、Z軸マイナス側の面)に積層して設けられる絶縁性を有する層である。第2絶縁層103の下面には第4導体層140が設けられる。 The second insulating layer 103 is an insulating layer laminated on the lower surface (the second main surface, the surface on the negative side of the Z axis) of the core layer 101. A fourth conductor layer 140 is provided on the lower surface of the second insulating layer 103.

 第1絶縁層102および第2絶縁層103は、プリプレグ層とも称され、例えば、エポキシ樹脂を含んで構成されるが、これに限定されない。また、第1絶縁層102および第2絶縁層103は、炭素繊維などを含んでいてもよい。 The first insulating layer 102 and the second insulating layer 103 are also called prepreg layers, and are made of, for example, but not limited to, epoxy resin. The first insulating layer 102 and the second insulating layer 103 may also contain carbon fiber, etc.

 第1導体層110は、第1絶縁層102の上面(Z軸プラス側の面)に設けられ、金属材料(例えば、銅箔)からなる層である。第1導体層110は、例えば、デバイス(例えば、絶縁デバイス107を含む)を実装するための配線、信号線などが設けられる。第1導体層110には、例えば、デバイスが実装される。 The first conductor layer 110 is provided on the upper surface (the surface on the positive side of the Z axis) of the first insulating layer 102, and is a layer made of a metal material (e.g., copper foil). The first conductor layer 110 is provided with, for example, wiring, signal lines, etc. for mounting devices (including, for example, the insulating device 107). For example, devices are mounted on the first conductor layer 110.

 第1導体層110は、第1電圧領域R1に設けられる第1導体パターン111と、第2電圧領域R2に設けられる第2導体パターン112とを有する。第1導体パターン111には、絶縁デバイス107の端子(第1端子)が接続される第3端子111a(導体パターン)が形成され、第2導体パターン112には、絶縁デバイス107の端子(第2端子)が接続される第4端子112a(導体パターン)が形成される。 The first conductor layer 110 has a first conductor pattern 111 provided in the first voltage region R1 and a second conductor pattern 112 provided in the second voltage region R2. The first conductor pattern 111 is formed with a third terminal 111a (conductor pattern) to which the terminal (first terminal) of the insulating device 107 is connected, and the second conductor pattern 112 is formed with a fourth terminal 112a (conductor pattern) to which the terminal (second terminal) of the insulating device 107 is connected.

 第1導体パターン111と第2導体パターン112とは、例えば、距離D1離れて設けられる。距離D1は、絶縁距離であり、第1電圧領域R1および第2電圧領域R2の電位差と、対応する絶縁規格とで決まる沿面距離である。言い換えると、多層基板100は距離D1の絶縁領域R3を有する。 The first conductor pattern 111 and the second conductor pattern 112 are arranged, for example, at a distance D1 apart. The distance D1 is an insulation distance, which is a creepage distance determined by the potential difference between the first voltage region R1 and the second voltage region R2 and the corresponding insulation standard. In other words, the multilayer substrate 100 has an insulation region R3 of distance D1.

 第2導体層120は、コア層101と第1絶縁層102との間に設けられ、金属材料(例えば、銅箔)からなる層である。第2導体層120には、例えば、グランド層などが設けられる。 The second conductor layer 120 is provided between the core layer 101 and the first insulating layer 102, and is a layer made of a metal material (e.g., copper foil). The second conductor layer 120 may include, for example, a ground layer.

 第2導体層120は、第1電圧領域R1に設けられる第1グランド層121と、第2電圧領域R2に設けられる第2グランド層122とを有する。 The second conductor layer 120 has a first ground layer 121 provided in the first voltage region R1 and a second ground layer 122 provided in the second voltage region R2.

 第3導体層130は、コア層101と第2絶縁層103との間に設けられ、金属材料(例えば、銅箔)からなる層である。第3導体層130には、例えば、電源層などが設けられる。 The third conductor layer 130 is provided between the core layer 101 and the second insulating layer 103, and is a layer made of a metal material (e.g., copper foil). For example, a power supply layer is provided on the third conductor layer 130.

 第3導体層130は、第1電圧領域R1に設けられる第1電源層131と、第2電圧領域R2に設けられる第2電源層132とを有する。 The third conductor layer 130 has a first power supply layer 131 provided in the first voltage region R1 and a second power supply layer 132 provided in the second voltage region R2.

 第4導体層140は、第2絶縁層103の下面(Z軸マイナス側の面)に設けられ、金属材料(例えば、銅箔)からなる層である。第4導体層140は、例えば、デバイスを実装するための配線、信号線などが設けられる。第4導体層140には、例えば、デバイスが実装される。 The fourth conductor layer 140 is provided on the lower surface (the surface on the negative Z-axis side) of the second insulating layer 103, and is a layer made of a metal material (e.g., copper foil). The fourth conductor layer 140 is provided with, for example, wiring, signal lines, etc. for mounting devices. For example, devices are mounted on the fourth conductor layer 140.

 第4導体層140は、第1電圧領域R1に設けられる第1導体パターン141と、第2電圧領域R2に設けられる第2導体パターン142とを有する。第1導体パターン141と第2導体パターン142とは、例えば、距離D1離れて設けられる。 The fourth conductor layer 140 has a first conductor pattern 141 provided in the first voltage region R1 and a second conductor pattern 142 provided in the second voltage region R2. The first conductor pattern 141 and the second conductor pattern 142 are provided, for example, at a distance D1 apart.

 絶縁デバイス107は、電圧領域が異なる領域の間に設けられる絶縁アンプであり、異なる電圧領域間における信号のやり取りを、当該異なる電圧領域間を電気的に絶縁した状態で、搬送波を用いて行うデバイスである。絶縁デバイス107は、デジタルアイソレータとも称される。絶縁デバイス107における絶縁領域R3の信号の伝達方法は、磁気結合法であってもよいし、容量結合法であってもよい。また、絶縁デバイス107は、絶縁領域R3を跨ぐように設けられる。なお、絶縁デバイス107の搬送波の周波数は、例えば、480MHzであるが、180MHzなど480MHzより低くてもよいし、480MHzより高くてもよい。 The isolation device 107 is an isolation amplifier provided between different voltage domains, and is a device that exchanges signals between different voltage domains using a carrier wave while electrically isolating the different voltage domains. The isolation device 107 is also called a digital isolator. The method of transmitting signals in the isolation domain R3 in the isolation device 107 may be a magnetic coupling method or a capacitive coupling method. The isolation device 107 is provided so as to straddle the isolation domain R3. The frequency of the carrier wave of the isolation device 107 is, for example, 480 MHz, but may be lower than 480 MHz, such as 180 MHz, or may be higher than 480 MHz.

 ここで、本願の要部であるコモンモード電流の帰還経路について説明する。 Here, we will explain the return path of the common mode current, which is the main part of this application.

 本実施の形態に係る多層基板100は、コモンモード電流の帰還経路を形成するために、さらに、第2導体層120に、面状パターン123および線状パターン124を有し、第3導体層130に、面状パターン133を有する。 The multilayer substrate 100 according to this embodiment further includes a planar pattern 123 and a linear pattern 124 on the second conductor layer 120, and a planar pattern 133 on the third conductor layer 130 to form a return path for the common mode current.

 面状パターン123および133は、平面視において、少なくとも一部が重なるように設けられる。図4の例では、平面視において、面状パターン133が面状パターン123の全体を覆うように設けられる。 The surface patterns 123 and 133 are arranged so as to overlap at least partially in a planar view. In the example of FIG. 4, the surface pattern 133 is arranged so as to cover the entire surface pattern 123 in a planar view.

 面状パターン123は、例えば、第2導体層120における絶縁領域R3内において、平面視で、第1グランド層121および第2グランド層122のそれぞれと離間して設けられる。例えば、面状パターン123は、平面視において、当該絶縁領域R3内であって、第2グランド層122と距離D2離れるように設けられる。面状パターン123は、線状パターン124を介して第1グランド層121と接続されている。 The planar pattern 123 is provided, for example, in the insulating region R3 of the second conductor layer 120, spaced apart from the first ground layer 121 and the second ground layer 122 in a planar view. For example, the planar pattern 123 is provided, in the insulating region R3, at a distance D2 from the second ground layer 122 in a planar view. The planar pattern 123 is connected to the first ground layer 121 via the linear pattern 124.

 面状パターン133は、例えば、平面視において、第3導体層130における絶縁領域R3において、第2電源層132における第1電源層131側の側面(Y軸マイナス側の面)から第1電源層131側に突出するように設けられる。例えば、面状パターン133は、平面視において、当該絶縁領域R3内であって、第1電源層131と距離D4離れるように設けられる。距離D4は、距離D3と等しい距離であってもよいし、距離D3より小さくてもよい。例えば、面状パターン133は、平面視において、少なくとも一部が線状パターン124と重なっていてもよい。 The planar pattern 133 is provided, for example, in the insulating region R3 of the third conductor layer 130 in a plan view so as to protrude from the side surface of the second power layer 132 facing the first power layer 131 (the surface on the negative Y-axis side) toward the first power layer 131 in the plan view. For example, the planar pattern 133 is provided within the insulating region R3 in a plan view so as to be separated from the first power layer 131 by a distance D4. The distance D4 may be equal to the distance D3 or may be smaller than the distance D3. For example, the planar pattern 133 may at least partially overlap the linear pattern 124 in a plan view.

 線状パターン124は、インダクタを形成するための導体パターンであり、第1グランド層121および第1電源層131の一方と、第2グランド層122および第2電源層132の一方との間の経路(帰還経路)上に設けられる。図4の例では、線状パターン124は、当該経路上において、第1グランド層121と、面状パターン123とを接続する。線状パターン124のY軸方向の長さは、例えば、距離D3である。また、図4の例では、線状パターン124の平面視形状はミアンダ状であるが、形状はこれに限定されず、例えば、直線状であってもよい。また、線状パターン124は、例えば、絶縁距離の規制を満たすならスルーホールなどを介して他層に形成された渦巻き状などであってもよい。 The linear pattern 124 is a conductor pattern for forming an inductor, and is provided on a path (return path) between one of the first ground layer 121 and the first power supply layer 131 and one of the second ground layer 122 and the second power supply layer 132. In the example of FIG. 4, the linear pattern 124 connects the first ground layer 121 and the planar pattern 123 on the path. The length of the linear pattern 124 in the Y-axis direction is, for example, a distance D3. In the example of FIG. 4, the linear pattern 124 has a meandering shape in a planar view, but the shape is not limited to this and may be, for example, a straight line. In addition, the linear pattern 124 may be, for example, a spiral shape formed in another layer via a through hole or the like, as long as it satisfies the regulations on the insulation distance.

 本実施の形態では、電磁障害の発生をより抑制する観点から、面状パターン123および133と、線状パターン124とは、平面視において、絶縁デバイス107と重なる位置に設けられるが、これに限定されない。 In this embodiment, in order to further suppress the occurrence of electromagnetic interference, the planar patterns 123 and 133 and the linear pattern 124 are arranged in positions that overlap the insulating device 107 in a planar view, but are not limited to this.

 なお、上記の距離D1~D4は、Y軸に平行な方向の距離(絶縁距離)である。距離D1~D4のそれぞれは、対応する絶縁規格を満足する距離以上に設定される。 Note that the above distances D1 to D4 are distances (insulation distances) parallel to the Y axis. Each of the distances D1 to D4 is set to a distance that satisfies the corresponding insulation standard or greater.

 上記のように、本実施の形態では、線状パターン124でインダクタを形成し、面状パターン123および133によるコンデンサ(平行平板コンデンサ)で容量を形成し、第1電圧領域R1と第2電圧領域R2との間にLC共振回路(LC直列共振回路)を形成する。 As described above, in this embodiment, an inductor is formed by the linear pattern 124, and capacitance is formed by the capacitor (parallel plate capacitor) formed by the planar patterns 123 and 133, forming an LC resonant circuit (LC series resonant circuit) between the first voltage region R1 and the second voltage region R2.

 これにより、インダクタおよび容量により信号の通過帯域を調整することが可能となるので、図2に示すような容量のみで通過帯域を調整する場合に比べて、広範囲に周波数を調整可能となる。よって、コモンモード電流をより確実に信号元に帰還させることができるので、多層基板100によれば、電磁障害を引き起こす可能性を低減することができる。 This allows the signal passband to be adjusted using an inductor and a capacitor, making it possible to adjust the frequency over a wider range than when the passband is adjusted using only a capacitor as shown in FIG. 2. This allows the common mode current to be fed back to the signal source more reliably, so the multilayer board 100 can reduce the possibility of causing electromagnetic interference.

 なお、LC共振回路の共振周波数は、絶縁デバイス107による信号伝達に対応した値を有する。例えば、LC共振回路の共振周波数は、絶縁デバイス107で用いられる搬送波の周波数の信号を通過可能に設定される。例えば、LC共振回路の共振周波数は、絶縁デバイス107で用いられる搬送波の周波数と一致するように設定される。 The resonant frequency of the LC resonant circuit has a value corresponding to the signal transmission by the isolation device 107. For example, the resonant frequency of the LC resonant circuit is set to allow a signal of the carrier frequency used by the isolation device 107 to pass through. For example, the resonant frequency of the LC resonant circuit is set to match the carrier frequency used by the isolation device 107.

 なお、コモンモード電流の帰還経路を形成する構成は、図4に示す構成に限定されない。例えば、絶縁領域R3における第2導体層120および第3導体層130の導体パターンが入れ替わってもよい。例えば、第2グランド層122における第1グランド層121側の側面(Y軸マイナス側の面)から第1グランド層121側に突出するように平面状の面状パターンが設けられ、当該面状パターンと平面視で重なる面状パターンが第3導体層130に形成され、第3導体層130の面状パターンが線状パターンにより第1電源層131と接続されていてもよい。また、例えば、線状パターン124は、面状パターン123と第2グランド層122とを接続し、第1電源層131における第2電源層132側の側面(Y軸プラス側の面)から第2電源層132側に突出するように平面状の面状パターンが設けられてもよい。また、例えば、面状パターン133は、第3導体層130における絶縁領域R3内において、平面視で、第1電源層131および第2電源層132のそれぞれと離間して設けられ、線状パターンを介して第2電源層132と接続されていてもよい。つまり、線状パターンは、第2導体層120および第3導体層130の少なくとも一方に設けられていればよい。 The configuration for forming the return path of the common mode current is not limited to the configuration shown in FIG. 4. For example, the conductor patterns of the second conductor layer 120 and the third conductor layer 130 in the insulating region R3 may be interchanged. For example, a planar surface pattern may be provided so as to protrude from the side surface (the surface on the negative Y-axis side) of the second ground layer 122 on the first ground layer 121 side to the first ground layer 121 side, and a surface pattern that overlaps with the planar pattern in a planar view may be formed on the third conductor layer 130, and the surface pattern of the third conductor layer 130 may be connected to the first power layer 131 by a linear pattern. Also, for example, the linear pattern 124 may connect the surface pattern 123 and the second ground layer 122, and a planar surface pattern may be provided so as to protrude from the side surface (the surface on the positive Y-axis side) of the first power layer 131 on the second power layer 132 side to the second power layer 132 side. Also, for example, the planar pattern 133 may be provided in the insulating region R3 of the third conductor layer 130, spaced apart from the first power layer 131 and the second power layer 132 in a plan view, and connected to the second power layer 132 via a linear pattern. In other words, the linear pattern may be provided on at least one of the second conductor layer 120 and the third conductor layer 130.

 [2.多層基板の伝搬特性]
 上記のように構成される多層基板100におけるコモンモード電流の伝搬特性について、図5を参照しながら説明する。図5は、本実施の形態に係る多層基板100のコモンモード電流の伝搬特性の一例を示す図である。
[2. Propagation characteristics of multilayer board]
The propagation characteristics of a common mode current in the multilayer substrate 100 configured as above will be described with reference to Fig. 5. Fig. 5 is a diagram showing an example of the propagation characteristics of a common mode current in the multilayer substrate 100 according to the present embodiment.

 多層基板100は、代表的な基板材料であるFR-4に適用しているものとする。また、多層基板100のコア層101の厚み(Z軸方向の長さ)は、0.6mmであり、第1絶縁層102および第2絶縁層103の厚みは0.3mmであるとする。 The multilayer board 100 is made of FR-4, a typical board material. The thickness (length in the Z-axis direction) of the core layer 101 of the multilayer board 100 is 0.6 mm, and the thicknesses of the first insulating layer 102 and the second insulating layer 103 are 0.3 mm.

 図5に示すように、このような構成の多層基板100によれば、コンデンサのみでは困難である480MHz周辺に通過特性を有する。言い換えると、多層基板100は、絶縁デバイス107の搬送波の周波数である480MHzの信号を通過させる伝搬特性を有する。 As shown in FIG. 5, the multilayer board 100 configured in this manner has a transmission characteristic around 480 MHz, which is difficult to achieve with a capacitor alone. In other words, the multilayer board 100 has a propagation characteristic that allows a signal of 480 MHz, which is the carrier frequency of the insulating device 107, to pass through.

 通過させる搬送波の周波数に応じて、面状パターン123、133および線状パターン124の形状を調整することにより、絶縁デバイス107の搬送波の帯域で第1電圧領域R1および第2電圧領域R2の一方から他方に信号(例えば、コモンモード電流)が通過容易な経路(コモンモード電流の帰還経路)を作成することができる。 By adjusting the shapes of the planar patterns 123, 133 and the linear pattern 124 according to the frequency of the carrier wave to be passed, it is possible to create a path (a return path for the common mode current) through which a signal (e.g., a common mode current) can easily pass from one of the first voltage region R1 and the second voltage region R2 to the other in the band of the carrier wave of the insulating device 107.

 このように、多層基板100は、コンデンサとインダクタとの直列共振周波数を調整することで、コンデンサのみでは実現が困難である480MHzなどの高周波帯の信号を通過させることが可能となる。 In this way, by adjusting the series resonance frequency of the capacitor and inductor, the multilayer board 100 is able to pass high-frequency signals such as 480 MHz, which is difficult to achieve using only a capacitor.

 なお、LC共振回路の共振周波数は、例えば、搬送波の周波数と一致するように設定されてもよいし、搬送波の周波数との差が所定の周波数以下となるように設定されてもよい。このように、LC共振回路の共振周波数は、デジタルアイソレーションによる信号伝達に対応した値を有し、当該値を実現できるように容量値およびインダクタ値が決定される。 The resonant frequency of the LC resonant circuit may be set, for example, to match the frequency of the carrier wave, or may be set so that the difference between the frequency of the carrier wave and the resonant frequency is equal to or less than a predetermined frequency. In this way, the resonant frequency of the LC resonant circuit has a value corresponding to signal transmission by digital isolation, and the capacitance value and inductor value are determined so as to realize this value.

 (実施の形態2)
 以下では、本実施の形態に係る多層基板について、図6を参照しながら説明する。なお、以下では、実施の形態1との相違点を中心に説明し、実施の形態1と同一又は類似の内容については説明を省略又は簡略化する。
(Embodiment 2)
The multilayer substrate according to the present embodiment will be described below with reference to Fig. 6. Note that the following description will focus on the differences from the first embodiment, and descriptions of the same or similar contents as the first embodiment will be omitted or simplified.

 図6は、本実施の形態に係る多層基板100aの構成を示す図である。図6の(a)は、多層基板100aの断面図であり、図6の(b)は、第2導体層120を示す平面図であり、図6の(c)は、第3導体層130を示す平面図である。本実施の形態に係る多層基板100aは、主にコンデンサが2つ形成されている点において、実施の形態1に係る多層基板100と相違する。多層基板100aは、基板の一例である。なお、以下では、距離D7が距離D1以下とする。 FIG. 6 is a diagram showing the configuration of a multilayer board 100a according to this embodiment. FIG. 6(a) is a cross-sectional view of the multilayer board 100a, FIG. 6(b) is a plan view showing the second conductor layer 120, and FIG. 6(c) is a plan view showing the third conductor layer 130. The multilayer board 100a according to this embodiment differs from the multilayer board 100 according to embodiment 1 mainly in that two capacitors are formed. The multilayer board 100a is an example of a board. In the following, it is assumed that the distance D7 is equal to or less than the distance D1.

 図6に示すように、第2導体層120は、面状パターン125および126を有する。 As shown in FIG. 6, the second conductor layer 120 has planar patterns 125 and 126.

 面状パターン125は、第1グランド層121aの第2グランド層122a側の面(Y軸プラス側の面)から第2グランド層122a側に突出するように形成された平面状の導体パターンである。面状パターン126は、第2グランド層122aの第1グランド層121a側の面(Y軸マイナス側の面)から第1グランド層121a側に突出するように形成された平面状の導体パターンである。面状パターン125および126は、距離D5(絶縁距離)離れた位置に設けられる。 The planar pattern 125 is a planar conductor pattern formed so as to protrude from the surface of the first ground layer 121a facing the second ground layer 122a (the surface on the positive side of the Y axis) toward the second ground layer 122a. The planar pattern 126 is a planar conductor pattern formed so as to protrude from the surface of the second ground layer 122a facing the first ground layer 121a (the surface on the negative side of the Y axis) toward the first ground layer 121a. The planar patterns 125 and 126 are provided at positions separated by a distance D5 (insulation distance).

 なお、面状パターン125および126の少なくとも一方は、線状パターンを介して導体パターンに接続されていてもよい。例えば、面状パターン125は、線状パターンを介して第1グランド層121aと接続されていてもよい。 At least one of the planar patterns 125 and 126 may be connected to the conductor pattern via a linear pattern. For example, the planar pattern 125 may be connected to the first ground layer 121a via a linear pattern.

 第3導体層130は、面状パターン134および135と、線状パターン136とを有する。 The third conductor layer 130 has planar patterns 134 and 135 and a linear pattern 136.

 面状パターン134および135は、絶縁領域R3内において、平面視で、第1電源層131aおよび第2電源層132aのそれぞれと離間して設けられ、線状パターン136で接続されている。 The planar patterns 134 and 135 are spaced apart from the first power layer 131a and the second power layer 132a in a plan view within the insulating region R3, and are connected by the linear pattern 136.

 面状パターン134は、面状パターン125と第1グランド層121aの一部を用いてコンデンサを形成するための導体パターンである。第1電源層131aには、Y軸プラス側の面からY軸マイナス方向にU字状に凹む凹部131a1が形成され、面状パターン134の少なくとも一部は当該凹部131a1に、第1電源層131aとの距離が距離D6となるように設けられる。言い換えると、面状パターン134は、平面視において、第1グランド層121aの一部および面状パターン125のそれぞれと重なるように設けられる。なお、面状パターン134は、平面視において、少なくとも面状パターン125と重なっていればよい。 The planar pattern 134 is a conductor pattern for forming a capacitor using the planar pattern 125 and a portion of the first ground layer 121a. The first power supply layer 131a is formed with a U-shaped recess 131a1 recessed from the surface on the positive side of the Y axis in the negative direction of the Y axis, and at least a portion of the planar pattern 134 is provided in the recess 131a1 such that the distance from the first power supply layer 131a is distance D6. In other words, the planar pattern 134 is provided so as to overlap with a portion of the first ground layer 121a and the planar pattern 125 in a planar view. It is sufficient that the planar pattern 134 overlaps at least the planar pattern 125 in a planar view.

 面状パターン135は、面状パターン126と第2グランド層122aの一部を用いてコンデンサを形成するための導体パターンである。第2電源層132aには、Y軸マイナス側の面からY軸プラス方向にU字状に凹む凹部132a1が形成され、面状パターン135の少なくとも一部は当該凹部132a1に、第2電源層132aとの距離が距離D6となるように設けられる。言い換えると、面状パターン135は、平面視において、第2グランド層122aの一部および面状パターン126のそれぞれと重なるように設けられる。なお、面状パターン135は、平面視において、少なくとも面状パターン126と重なっていればよい。 The planar pattern 135 is a conductor pattern for forming a capacitor using the planar pattern 126 and a portion of the second ground layer 122a. The second power supply layer 132a is formed with a U-shaped recess 132a1 recessed from the surface on the negative Y-axis side toward the positive Y-axis direction, and at least a portion of the planar pattern 135 is provided in the recess 132a1 such that the distance from the second power supply layer 132a is distance D6. In other words, the planar pattern 135 is provided so as to overlap with a portion of the second ground layer 122a and the planar pattern 126 in a planar view. It is sufficient that the planar pattern 135 overlaps at least the planar pattern 126 in a planar view.

 線状パターン136は、インダクタを形成するためのパターンであり、図6の例では、平面視において面状パターン134および135の間に設けられ、面状パターン134および135を接続する。線状パターン136のY軸方向の長さは、例えば、距離D7である。距離D7は、例えば、距離D5と等しい距離であってもよい。 Linear pattern 136 is a pattern for forming an inductor, and in the example of FIG. 6, is provided between planar patterns 134 and 135 in a plan view, connecting planar patterns 134 and 135. The length of linear pattern 136 in the Y-axis direction is, for example, distance D7. Distance D7 may be, for example, equal to distance D5.

 このように、多層基板100aは、絶縁領域R3の第3導体層130の第1電圧領域R1側に平面状の面状パターン134を有し、第2電圧領域R2側に平面状の面状パターン135を有し、面状パターン134および135の間をミアンダ状の線状パターン136で電気的に接続した構成を有する。 In this way, the multilayer substrate 100a has a planar surface pattern 134 on the first voltage region R1 side of the third conductor layer 130 in the insulating region R3, and a planar surface pattern 135 on the second voltage region R2 side, with the surface patterns 134 and 135 electrically connected by a meandering linear pattern 136.

 これにより、第1電圧領域R1と第2電圧領域R2との間にLC共振回路を形成することができる。面状パターン125、126、134、135および線状パターン136の少なくとも1つの形状を調整することにより、絶縁デバイス107の搬送波の帯域に応じた第1電圧領域R1と第2電圧領域R2との間を信号が通過容易な経路(コモンモード電流の帰還経路)を作成することができる。また、漏洩電流の通過経路に容量を2つ有するので、2重絶縁として機能し、多層基板100aの耐圧性を向上させることができる。このような多層基板100aは、高耐圧を要求される用途に対応することができる。 As a result, an LC resonant circuit can be formed between the first voltage region R1 and the second voltage region R2. By adjusting the shape of at least one of the planar patterns 125, 126, 134, 135 and the linear pattern 136, a path (a return path for a common mode current) through which a signal can easily pass between the first voltage region R1 and the second voltage region R2 according to the carrier band of the insulating device 107 can be created. In addition, since there are two capacitances in the leakage current passage path, it functions as double insulation and can improve the voltage resistance of the multilayer substrate 100a. Such a multilayer substrate 100a can be used in applications where high voltage resistance is required.

 なお、面状パターン134および135は、平面視における面積が等しいが、例えば、互いに異なっていてもよい。 Note that the surface patterns 134 and 135 have the same area in a plan view, but may be different from each other, for example.

 なお、所望の容量が得られるならば面状パターン125および126は設けられなくてもよい。 If the desired capacitance is obtained, the planar patterns 125 and 126 do not need to be provided.

 なお、第2導体層120および第3導体層130の導体パターンが入れ替わってもよい。例えば、面状パターン134および135と、線状パターン136とが第2導体層120に形成され、面状パターン125および126が第3導体層130に形成されてもよい。 The conductor patterns of the second conductor layer 120 and the third conductor layer 130 may be interchanged. For example, the planar patterns 134 and 135 and the linear pattern 136 may be formed on the second conductor layer 120, and the planar patterns 125 and 126 may be formed on the third conductor layer 130.

 なお、上記の距離D5~D7は、Y軸に平行な方向の距離(絶縁距離)である。距離D5~D7のそれぞれは、対応する絶縁規格を満足する距離以上に設定される。例えば、距離D6は、絶縁デバイス107の定格電圧の1/2の電圧において、対応する絶縁規格を満足する距離以上に設定される。 Note that the above distances D5 to D7 are distances (insulation distances) parallel to the Y-axis. Each of the distances D5 to D7 is set to a distance that satisfies the corresponding insulation standard or more. For example, the distance D6 is set to a distance that satisfies the corresponding insulation standard at a voltage that is half the rated voltage of the insulating device 107.

 (実施の形態3)
 以下では、本実施の形態に係る多層基板について、図7を参照しながら説明する。なお、以下では、実施の形態1との相違点を中心に説明し、実施の形態1と同一又は類似の内容については説明を省略又は簡略化する。
(Embodiment 3)
The multilayer substrate according to the present embodiment will be described below with reference to Fig. 7. The following description will focus on the differences from the first embodiment, and descriptions of the same or similar aspects as the first embodiment will be omitted or simplified.

 図7は、本実施の形態に係る多層基板100bの構成を示す図である。図7の(a)は、多層基板100bの断面図であり、図7の(b)は、第2導体層120を示す平面図であり、図7の(c)は、第3導体層130を示す平面図である。本実施の形態に係る多層基板100bは、グランド層と接続された導体パターン(面状パターン127および137)でコンデンサが形成される点において、実施の形態1に係る多層基板100と相違する。多層基板100bは、基板の一例である。 FIG. 7 is a diagram showing the configuration of multilayer board 100b according to this embodiment. FIG. 7(a) is a cross-sectional view of multilayer board 100b, FIG. 7(b) is a plan view showing second conductor layer 120, and FIG. 7(c) is a plan view showing third conductor layer 130. Multilayer board 100b according to this embodiment differs from multilayer board 100 according to embodiment 1 in that a capacitor is formed by the conductor patterns (planar patterns 127 and 137) connected to the ground layer. Multilayer board 100b is an example of a board.

 本実施の形態に係る多層基板100bは、コモンモード電流の帰還経路を形成するために、第2導体層120に面状パターン127を有し、第3導体層130に面状パターン137、線状パターン138およびランド139を有する。また、多層基板100bは、第2電圧領域R2においてコア層101を貫通するスルーホール150を有する。 The multilayer substrate 100b according to this embodiment has a planar pattern 127 on the second conductor layer 120, and a planar pattern 137, a linear pattern 138, and a land 139 on the third conductor layer 130 to form a return path for the common mode current. The multilayer substrate 100b also has a through hole 150 that penetrates the core layer 101 in the second voltage region R2.

 面状パターン127および137は、平面視において、少なくとも一部が重なるように設けられる。図7の例では、平面視において、面状パターン127が面状パターン137の全体を覆うように設けられる。 The surface patterns 127 and 137 are arranged so as to overlap at least partially in a planar view. In the example of FIG. 7, the surface pattern 127 is arranged so as to cover the entire surface pattern 137 in a planar view.

 面状パターン127は、例えば、第2導体層120における絶縁領域R3内において、第1グランド層121bにおける第2グランド層122b側の側面(Y軸プラス側の面)から第2グランド層122b側に突出するように設けられる。例えば、面状パターン127は、平面視において、当該絶縁領域R3内であって、第2グランド層122bと距離D8離れるように設けられる。また、面状パターン127は、例えば、平面視において、少なくとも一部が線状パターン138と重なっていてもよい。 The planar pattern 127 is arranged, for example, in the insulating region R3 of the second conductor layer 120 so as to protrude from the side surface of the first ground layer 121b facing the second ground layer 122b (the surface on the positive Y-axis side) toward the second ground layer 122b. For example, the planar pattern 127 is arranged, in plan view, within the insulating region R3 and at a distance D8 from the second ground layer 122b. Furthermore, the planar pattern 127 may, for example, at least partially overlap the linear pattern 138 in plan view.

 面状パターン137は、平面視で、第1電源層131bおよび第2電源層132bのそれぞれと離間して設けられる。例えば、面状パターン137は、平面視において、当該絶縁領域R3内であって、第1電源層131bと距離D9離れるように設けられる。面状パターン137は、線状パターン138、ランド139およびスルーホール150を介して第2グランド層122bと接続されている。 The planar pattern 137 is spaced apart from the first power supply layer 131b and the second power supply layer 132b in a planar view. For example, the planar pattern 137 is located within the insulating region R3 and is spaced a distance D9 from the first power supply layer 131b in a planar view. The planar pattern 137 is connected to the second ground layer 122b via the linear pattern 138, the land 139, and the through hole 150.

 線状パターン138は、インダクタを形成するためのパターンであり、図7の例では、面状パターン137とランド139とを接続する。線状パターン138のY軸方向の長さは、例えば、距離D10である。 Linear pattern 138 is a pattern for forming an inductor, and in the example of FIG. 7, it connects planar pattern 137 and land 139. The length of linear pattern 138 in the Y-axis direction is, for example, distance D10.

 ランド139は、スルーホール150と電気的に接続される導体パターンである。第2電源層132bには、Y軸マイナス側の面からY軸プラス方向にU字状に凹む凹部132b1が形成され、ランド139の少なくとも一部は当該凹部132b1に、第2電源層132bとの距離が距離D11となるように設けられる。言い換えると、ランド139は、平面視において、第2電源層132bの一部と重なるように設けられる。 The land 139 is a conductor pattern electrically connected to the through hole 150. A recess 132b1 is formed in the second power supply layer 132b, recessed in a U-shape from the surface on the negative side of the Y axis toward the positive direction of the Y axis, and at least a portion of the land 139 is provided in the recess 132b1 such that the distance from the second power supply layer 132b is distance D11. In other words, the land 139 is provided so as to overlap a portion of the second power supply layer 132b in a plan view.

 スルーホール150は、多層基板100のコア層101を積層方向(Z軸方向)に貫通し、ランド139と第2グランド層122bとを接続する。つまり、スルーホール150は、第2グランド層122bと面状パターン137とを接続する。これにより、第2グランド層122bと面状パターン137とは、同電位となる。 The through hole 150 penetrates the core layer 101 of the multilayer board 100 in the stacking direction (Z-axis direction) and connects the land 139 to the second ground layer 122b. In other words, the through hole 150 connects the second ground layer 122b to the planar pattern 137. This makes the second ground layer 122b and the planar pattern 137 at the same potential.

 なお、上記の距離D8~D11は、Y軸に平行な方向の距離(絶縁距離)である。距離D8~D11のそれぞれは、対応する絶縁規格を満足する距離以上に設定される。 Note that the above distances D8 to D11 are distances (insulation distances) parallel to the Y axis. Each of the distances D8 to D11 is set to a distance that satisfies the corresponding insulation standard or greater.

 上記のように、本実施の形態では、線状パターン138でインダクタを形成し、面状パターン127および137によるコンデンサで容量を形成し、第1電圧領域R1と第2電圧領域R2との間にLC共振回路を形成する。面状パターン127、137および線状パターン138の少なくとも1つの形状を調整することにより、絶縁デバイス107の搬送波の帯域に応じた、第1電圧領域R1と第2電圧領域R2との間を信号が通過容易な経路(コモンモード電流の帰還経路)を作成することができる。図7の例では、第1グランド層121bおよび第2グランド層122bの間に信号が通過可能な経路を形成することができる。 As described above, in this embodiment, an inductor is formed by the linear pattern 138, a capacitance is formed by the capacitor formed by the planar patterns 127 and 137, and an LC resonant circuit is formed between the first voltage region R1 and the second voltage region R2. By adjusting the shape of at least one of the planar patterns 127, 137 and the linear pattern 138, a path through which a signal can easily pass between the first voltage region R1 and the second voltage region R2 (a return path for a common mode current) according to the carrier band of the insulating device 107 can be created. In the example of FIG. 7, a path through which a signal can pass can be formed between the first ground layer 121b and the second ground layer 122b.

 なお、絶縁領域R3における第2導体層120および第3導体層130の導体パターンが入れ替わってもよい。例えば、面状パターン137と、線状パターン138と、ランド139とが第2導体層120に形成され、面状パターン127が第3導体層130に形成されてもよい。また、ランド139およびスルーホール150は、第2電圧領域R2に設けられることに限定されず、第1電圧領域R1に設けられてもよい。この場合、面状パターン127は、例えば、第2導体層120における絶縁領域R3内において、第2グランド層122bにおける第1グランド層121b側の側面(Y軸マイナス側の面)から第1グランド層121b側に突出するように設けられる。 The conductor patterns of the second conductor layer 120 and the third conductor layer 130 in the insulating region R3 may be interchanged. For example, the planar pattern 137, the linear pattern 138, and the land 139 may be formed in the second conductor layer 120, and the planar pattern 127 may be formed in the third conductor layer 130. The land 139 and the through hole 150 are not limited to being provided in the second voltage region R2, and may be provided in the first voltage region R1. In this case, the planar pattern 127 is provided, for example, in the insulating region R3 of the second conductor layer 120 so as to protrude from the side surface of the second ground layer 122b on the first ground layer 121b side (the surface on the negative Y-axis side) to the first ground layer 121b side.

 (実施の形態4)
 以下では、本実施の形態に係る両面基板について、図8を参照しながら説明する。なお、以下では、実施の形態1との相違点を中心に説明し、実施の形態1と同一又は類似の内容については説明を省略又は簡略化する。
(Embodiment 4)
The double-sided board according to the present embodiment will be described below with reference to Fig. 8. Note that the following description will focus on the differences from the first embodiment, and descriptions of the same or similar aspects as the first embodiment will be omitted or simplified.

 図8は、本実施の形態に係る両面基板100cの構成を示す図である。図8の(a)は、両面基板100cの断面図であり、図8の(b)は、第2導体層120を示す平面図であり、図8の(c)は、第3導体層130を示す平面図である。本実施の形態に係る両面基板100cは、第1絶縁層102および第2103を備えない点において、実施の形態1に係る多層基板100と相違する。両面基板100cは、2層基板とも称され、基板の一例である。なお、図8の(b)および(c)は、図4の(b)および(c)と実質的に同一の図面であるので、説明を省略する。また、図8の(b)および(c)では、第3端子121cおよび第4端子122cの図示を省略している。 8 is a diagram showing the configuration of a double-sided board 100c according to this embodiment. FIG. 8(a) is a cross-sectional view of the double-sided board 100c, FIG. 8(b) is a plan view showing the second conductor layer 120, and FIG. 8(c) is a plan view showing the third conductor layer 130. The double-sided board 100c according to this embodiment differs from the multilayer board 100 according to the first embodiment in that it does not include the first insulating layer 102 and the second insulating layer 103. The double-sided board 100c is also called a two-layer board and is an example of a board. Note that FIG. 8(b) and (c) are substantially the same as FIG. 4(b) and (c), and therefore the description will be omitted. Also, in FIG. 8(b) and (c), the third terminal 121c and the fourth terminal 122c are omitted from illustration.

 図8に示すように、両面基板100cは、コア層101と絶縁デバイス107とを備える。 As shown in FIG. 8, the double-sided substrate 100c includes a core layer 101 and an insulating device 107.

 コア層101は、第1主面(Z軸プラス側の面)に第2導体層120を有し、第2主面(Z軸マイナス側の面)に第3導体層130を有する。 The core layer 101 has a second conductor layer 120 on the first main surface (the surface on the positive side of the Z axis) and a third conductor layer 130 on the second main surface (the surface on the negative side of the Z axis).

 第2導体層120は、第1電圧領域R1に設けられる第1グランド層121と、第2電圧領域R2に設けられる第2グランド層122とを有する。第1グランド層121には、絶縁デバイス107の端子(第1端子)が接続される第3端子121c(導体パターン)が形成され、第2グランド層122には、絶縁デバイス107の端子(第2端子)が接続される第4端子122c(導体パターン)が形成される。また、第2導体層120は、例えば、デバイス(例えば、絶縁デバイス107を含む)を実装するための配線、信号線、グランド層などが混在して設けられてもよい。 The second conductor layer 120 has a first ground layer 121 provided in the first voltage region R1 and a second ground layer 122 provided in the second voltage region R2. A third terminal 121c (conductor pattern) to which the terminal (first terminal) of the isolation device 107 is connected is formed in the first ground layer 121, and a fourth terminal 122c (conductor pattern) to which the terminal (second terminal) of the isolation device 107 is connected is formed in the second ground layer 122. In addition, the second conductor layer 120 may be provided with a mixture of wiring, signal lines, ground layers, etc. for implementing a device (including, for example, the isolation device 107).

 第3導体層130は、第1電圧領域R1に設けられる第1電源層131と、第2電圧領域R2に設けられる第2電源層132とを有する。第3導体層130は、例えば、電源線、デバイスを実装するための配線、信号線などが混在して設けられてもよい。 The third conductor layer 130 has a first power supply layer 131 provided in the first voltage region R1 and a second power supply layer 132 provided in the second voltage region R2. The third conductor layer 130 may be provided with a mixture of, for example, power supply lines, wiring for implementing devices, signal lines, etc.

 (その他の実施の形態)
 以上、一つまたは複数の態様に係る基板について、各実施の形態に基づいて説明したが、本開示は、この各実施の形態に限定されるものではない。本開示の趣旨を逸脱しない限り、当業者が思いつく各種変形を本実施の形態に施したものや、異なる実施の形態における構成要素を組み合わせて構築される形態も、本開示に含まれてもよい。
Other Embodiments
Although the substrate according to one or more aspects has been described based on each embodiment, the present disclosure is not limited to these embodiments. As long as it does not deviate from the gist of the present disclosure, various modifications conceived by a person skilled in the art to the present embodiment and forms constructed by combining components in different embodiments may also be included in the present disclosure.

 例えば、本開示は、デジタルアイソレータが実装される基板の設計方法として実現されてもよい。当該設計方法は、基板に実装されるデジタルアイソレータが用いる搬送波の周波数を取得するステップと、取得された搬送波の周波数とLC直列共振回路の共振周波数とが一致するように、面状パターンおよび線状パターンの形状を決定するステップとを含む。 For example, the present disclosure may be realized as a method for designing a substrate on which a digital isolator is mounted. The design method includes a step of acquiring the frequency of a carrier wave used by the digital isolator mounted on the substrate, and a step of determining the shapes of the planar pattern and the linear pattern so that the acquired frequency of the carrier wave matches the resonant frequency of the LC series resonant circuit.

 また、上記各実施の形態では、第1電圧領域R1と第2電圧領域R2とが互いに電圧が異なる領域である例について説明したがこれに限定されず、第1電圧領域R1と第2電圧領域とは同電位の領域であってもよい。 In addition, in each of the above embodiments, an example has been described in which the first voltage region R1 and the second voltage region R2 are regions with different voltages, but this is not limited thereto, and the first voltage region R1 and the second voltage region may be regions with the same potential.

 また、上記実施の形態1における第2導体層120および第3導体層130は入れ替えられてもよい。つまり、第1グランド層121および第2グランド層122と第1電源層131および第2電源層132とが入れ替えられてもよい。第1グランド層121、第2グランド層122、第1電源層131および第2電源層132はそれぞれ、直流電位が供給される層である。例えば、第2導体層120グランド層として機能するか電源層として機能するかは、多層基板100に各種回路等が実装された後、決定される。また、他の実施の形態においても同様である。 Furthermore, the second conductor layer 120 and the third conductor layer 130 in the above-mentioned first embodiment may be interchanged. That is, the first ground layer 121 and the second ground layer 122 may be interchanged with the first power supply layer 131 and the second power supply layer 132. The first ground layer 121, the second ground layer 122, the first power supply layer 131 and the second power supply layer 132 are each a layer to which a DC potential is supplied. For example, whether the second conductor layer 120 functions as a ground layer or a power supply layer is determined after various circuits and the like are mounted on the multilayer board 100. The same applies to the other embodiments.

 また、上記実施の形態1において、第1グランド層121および第2グランド層122が第2導体層120に設けられ、第1電源層131および第2電源層132が第3導体層130に設けられる例について説明したがこれに限定されず、第1グランド層121および第2グランド層122、並びに、第1電源層131および第2電源層132はそれぞれ、第1導体層110、第2導体層120、第3導体層130および第4導体層140のいずれかに設けられていればよい。 In the above embodiment 1, an example has been described in which the first ground layer 121 and the second ground layer 122 are provided on the second conductor layer 120, and the first power supply layer 131 and the second power supply layer 132 are provided on the third conductor layer 130, but this is not limited to the example. The first ground layer 121 and the second ground layer 122, and the first power supply layer 131 and the second power supply layer 132 may each be provided on any of the first conductor layer 110, the second conductor layer 120, the third conductor layer 130, and the fourth conductor layer 140.

 また、上記各実施の形態において、コア層101の一つの主面には1つ又は2つの面状パターンが設けられる例について説明したが面状パターンの数はこれに限定されず、例えば、当該1つの主面に3つ以上の面状パターンが設けられていてもよい。また、線状パターンにおいても同様に、当該1つの主面に2つ以上の線状パターンが設けられていてもよい。 In addition, in each of the above embodiments, an example has been described in which one or two planar patterns are provided on one main surface of the core layer 101, but the number of planar patterns is not limited to this, and for example, three or more planar patterns may be provided on the one main surface. Similarly, in the case of linear patterns, two or more linear patterns may be provided on the one main surface.

 また、上記各実施の形態において、面状パターンおよび線状パターンの少なくとも1つの一部分または全部分は、平面視において絶縁デバイス107と重ならない位置に設けられていてもよい。 In addition, in each of the above embodiments, at least one part or all of the planar pattern and the linear pattern may be provided in a position that does not overlap with the insulating device 107 in a plan view.

 また、上記各実施の形態において、基板は2層基板又は4層基板である例について説明したがこれに限定されず、3層基板であってもよいし、5層以上の基板であってもよい。 In addition, in each of the above embodiments, the substrate is described as being a two-layer substrate or a four-layer substrate, but this is not limited thereto, and the substrate may be a three-layer substrate or a substrate having five or more layers.

 また、上記各実施の形態における基板は、絶縁デバイス107が実装されていない状態で流通してもよいし、絶縁デバイス107が実装された状態で流通してもよい。 In addition, the substrates in each of the above embodiments may be distributed without the insulating device 107 mounted thereon, or may be distributed with the insulating device 107 mounted thereon.

 (付記)
 以上の各実施の形態の記載により、下記の技術が開示される。
(Additional Note)
The above description of each embodiment discloses the following techniques.

 (技術1)平面視において第1電圧領域および第2電圧領域を有し、前記第1電圧領域および前記第2電圧領域を電気的に分離するデジタルアイソレータが実装される基板であって、コア層と、導電体であり、前記コア層の第1主面上において、前記第1電圧領域に設けられる第1グランド層と、導電体であり、前記コア層の前記第1主面上において、前記第2電圧領域に設けられる第2グランド層と、前記コア層の第2主面上において、前記第1電圧領域に設けられる第1電源層と、前記コア層の前記第2主面上において、前記第2電圧領域に設けられる第2電源層と、導電体であり、前記基板の平面視において少なくとも一部が互いに重なるように設けられた2つの面状パターンを含む複数の面状パターンと、前記平面視において線状である線状パターンと、を備え、前記線状パターンは、前記第1グランド層および前記第1電源層の一方と、前記第2グランド層および前記第2電源層の一方とを結ぶ経路上に設けられ、前記線状パターンは、前記2つの面状パターンのうち一方と接続され、前記2つの面状パターンと前記線状パターンとを含む共振回路の共振周波数は、前記デジタルアイソレータによる信号伝達に対応した値を有する、基板。 (Technology 1) A substrate having a first voltage region and a second voltage region in a planar view, on which a digital isolator is mounted that electrically isolates the first voltage region and the second voltage region, the substrate comprising: a core layer; a first ground layer which is a conductor and is provided in the first voltage region on the first main surface of the core layer; a second ground layer which is a conductor and is provided in the second voltage region on the first main surface of the core layer; a first power supply layer which is provided in the first voltage region on the second main surface of the core layer; A board that is an electric body and includes a plurality of planar patterns including two planar patterns that are arranged so that at least a portion of the planar patterns overlap each other in a planar view of the board, and a linear pattern that is linear in the planar view, the linear pattern is arranged on a path that connects one of the first ground layer and the first power supply layer and one of the second ground layer and the second power supply layer, the linear pattern is connected to one of the two planar patterns, and the resonant frequency of a resonant circuit that includes the two planar patterns and the linear pattern has a value that corresponds to signal transmission by the digital isolator.

 これによれば、面状パターンおよび線状パターンの形状を調整することにより、デジタルアイソレータの搬送波の帯域で第1電圧領域および第2電圧領域の一方から他方に信号(例えば、コモンモード電流)が通過容易な経路(コモンモード電流の帰還経路)を作成することができる。例えば、当該経路上に面状パターンのみが設けられる(つまり、コンデンサのみが設けられる)場合より、搬送波の周波数に応じた通過帯域の調整が可能となる。よって、デジタルアイソレータが実装される基板において、コモンモード電流が放射ノイズ(エミッション)として拡散されにくくなるので、電磁障害が発生することを抑制することができる。 In this way, by adjusting the shapes of the planar pattern and linear pattern, a path (common mode current return path) can be created that allows a signal (e.g., a common mode current) to easily pass from one of the first voltage domain and the second voltage domain to the other in the carrier band of the digital isolator. For example, it is possible to adjust the pass band according to the carrier frequency more easily than when only a planar pattern is provided on the path (i.e., when only a capacitor is provided). Therefore, in the board on which the digital isolator is mounted, the common mode current is less likely to diffuse as radiated noise (emission), and the occurrence of electromagnetic interference can be suppressed.

 (技術2)前記複数の面状パターンのうちの、前記2つの面状パターンは、前記第1グランド層と接続される第1面状パターンと、前記第2電源層と接続される第2面状パターンと、である、技術1に記載の基板。 (Technology 2) The substrate described in Technology 1, in which the two planar patterns among the plurality of planar patterns are a first planar pattern connected to the first ground layer and a second planar pattern connected to the second power supply layer.

 これによれば、第1グランド層は第1主面上に形成され、第2電源層は第2主面上に形成されているので、簡易な構成でコンデンサを構成することができる。 In this way, the first ground layer is formed on the first main surface, and the second power supply layer is formed on the second main surface, so the capacitor can be constructed with a simple structure.

 (技術3)前記線状パターンは、前記第1面状パターンと前記第1グランド層との間、または、前記第2面状パターンと前記第2電源層との間、を接続する、技術2に記載の基板。 (Technology 3) The linear pattern connects between the first planar pattern and the first ground layer, or between the second planar pattern and the second power layer, in the substrate described in Technology 2.

 これによれば、第1グランド層と第2電源層との間に設けられたLC直列共振回路の共振周波数を調整することができるので、当該経路における搬送波の周波数に応じた通過帯域の調整が可能となり、電磁障害が発生することを抑制することができる。 This allows the resonant frequency of the LC series resonant circuit provided between the first ground layer and the second power layer to be adjusted, making it possible to adjust the passband according to the frequency of the carrier wave in that path, thereby preventing electromagnetic interference.

 (技術4)前記複数の面状パターンのうちの2つの面状パターンは、前記第1グランド層と接続される第1面状パターンと、前記第2グランド層と接続される第2面状パターンと、である、技術1に記載の基板。 (Technology 4) A substrate as described in Technology 1, in which two of the plurality of planar patterns are a first planar pattern connected to the first ground layer and a second planar pattern connected to the second ground layer.

 これによれば、第1グランド層と第2グランド層との間の経路により、コモンモード電流の帰還経路を形成することが可能である。 This makes it possible to form a return path for the common mode current via the path between the first ground layer and the second ground layer.

 (技術5)前記線状パターンは、前記第1面状パターンと前記第1グランド層との間、または、前記第2面状パターンと前記第2グランド層との間、を接続する、技術4に記載の基板。 (Technology 5) The board described in Technology 4, in which the linear pattern connects between the first planar pattern and the first ground layer, or between the second planar pattern and the second ground layer.

 これによれば、第1グランド層と第2グランド層との間に設けられたLC直列共振回路の共振周波数を調整することができるので、当該経路における搬送波の周波数に応じた通過帯域の調整が可能となり、電磁障害が発生することを抑制することができる。 This allows the resonant frequency of the LC series resonant circuit provided between the first ground layer and the second ground layer to be adjusted, making it possible to adjust the passband according to the frequency of the carrier wave in that path, thereby preventing electromagnetic interference.

 (技術6)前記コア層には、前記第1主面から前記第2主面を貫通するスルーホールが設けられ、前記第1面状パターンは、前記第2主面に形成されており、前記線状パターンは、前記スルーホールを介して、前記第1面状パターンと前記第1グランド層とを接続する、技術5に記載の基板。 (Technology 6) The core layer is provided with a through hole penetrating from the first main surface to the second main surface, the first planar pattern is formed on the second main surface, and the linear pattern connects the first planar pattern and the first ground layer via the through hole, in the board described in Technology 5.

 これによれば、スルーホールを有する構成により、第1グランド層と第2グランド層との間の経路を形成することができる。 As a result, a path can be formed between the first ground layer and the second ground layer by using a configuration with a through hole.

 (技術7)前記複数の面状パターンのうちの前記2つの面状パターンは、前記第1電源層と接続される第1面状パターンと、前記第2電源層と接続される第2面状パターンと、である、技術1に記載の基板。 (Technology 7) The substrate described in Technology 1, in which the two planar patterns of the plurality of planar patterns are a first planar pattern connected to the first power supply layer and a second planar pattern connected to the second power supply layer.

 これによれば、第1電源層と第2電源層との間の経路により、コモンモード電流の帰還経路を形成することが可能である。 This makes it possible to form a return path for the common mode current via the path between the first power supply layer and the second power supply layer.

 (技術8)前記線状パターンは、前記第1面状パターンと前記第1電源層との間、または、前記第2面状パターンと前記第2電源層との間、を接続する、技術7に記載の基板。 (Technology 8) The substrate described in Technology 7, in which the linear pattern connects between the first planar pattern and the first power layer, or between the second planar pattern and the second power layer.

 これによれば、第1グランド層と第2電源層との間に設けられたLC直列共振回路の共振周波数を調整することができるので、当該経路における搬送波の周波数に応じた通過帯域の調整が可能となり、電磁障害が発生することを抑制することができる。 This allows the resonant frequency of the LC series resonant circuit provided between the first ground layer and the second power layer to be adjusted, making it possible to adjust the passband according to the frequency of the carrier wave in that path, thereby preventing electromagnetic interference.

 (技術9)前記複数の面状パターンは、第3面状パターンと第4面状パターンとを更に含み、前記複数の面状パターンのうちの、前記も2つの面状パターンは、前記第1グランド層および前記第1電源層のうち一方の層と接続される第1面状パターンと、前記第2グランド層および前記第2電源層のうち一方の層と接続される第2面状パターンと、であり、前記平面視において、前記第3面状パターンの少なくとも一部は、前記第1面状パターンと重なるように設けられ、前記平面視において、前記第4面状パターンの少なくとも一部は、前記第2面状パターンと重なるように設けられ、前記線状パターンは、前記第3面状パターンと前記第4面状パターンとの間を接続する、技術1に記載の基板。 (Technology 9) The substrate described in Technology 1, wherein the plurality of planar patterns further includes a third planar pattern and a fourth planar pattern, the two planar patterns among the plurality of planar patterns being a first planar pattern connected to one of the first ground layer and the first power layer, and a second planar pattern connected to one of the second ground layer and the second power layer, at least a portion of the third planar pattern being arranged to overlap the first planar pattern in the planar view, at least a portion of the fourth planar pattern being arranged to overlap the second planar pattern in the planar view, and the linear pattern connecting between the third planar pattern and the fourth planar pattern.

 これによれば、コンデンサが2つ形成されるので、多層基板の耐圧を向上させることができる。 This allows two capacitors to be formed, improving the voltage resistance of the multilayer board.

 (技術10)前記共振回路の共振周波数は、前記デジタルアイソレータで用いられる搬送波の周波数の信号を通過可能に設定される、技術1~9のいずれかに記載の基板。 (Technology 10) A substrate described in any one of techniques 1 to 9, in which the resonant frequency of the resonant circuit is set to allow signals of the carrier frequency used in the digital isolator to pass through.

 これによれば、搬送波の周波数に応じた通過帯域を有するLC共振回路によりコモンモード電流をより確実に信号元の電圧領域へ帰還させることができるので、電磁障害が発生することをより確実に抑制することができる。 As a result, the common mode current can be more reliably fed back to the voltage domain of the signal source by an LC resonant circuit with a passband corresponding to the carrier frequency, so that the occurrence of electromagnetic interference can be more reliably suppressed.

 (技術11)前記コア層の前記第1主面上に積層され、前記第1電圧領域および前記第2電圧領域のそれぞれに導体層を有する第1絶縁層と、前記コア層の前記第2主面上に積層され、前記第1電圧領域および前記第2電圧領域のそれぞれに導体層を有する第2絶縁層と、を更に備える、技術1~10のいずれかに記載の基板。 (Technology 11) A substrate according to any one of techniques 1 to 10, further comprising a first insulating layer laminated on the first main surface of the core layer and having a conductor layer in each of the first voltage region and the second voltage region, and a second insulating layer laminated on the second main surface of the core layer and having a conductor layer in each of the first voltage region and the second voltage region.

 これによれば、2つの容量が2重絶縁として機能するので、多層基板の耐圧性を向上させることができる。 As a result, the two capacitors function as double insulation, improving the voltage resistance of the multilayer board.

 (技術12)前記デジタルアイソレータを更に備える、技術1~11のいずれかに記載の基板。 (Technology 12) The substrate described in any one of Technology 1 to Technology 11, further comprising the digital isolator.

 これによれば、デジタルアイソレータが実装された基板において、電磁障害が発生することを抑制することができる。 This makes it possible to prevent electromagnetic interference from occurring on the board on which the digital isolator is mounted.

 本開示は、デジタルアイソレータが絶縁デバイスとして搭載される基板等に有用である。 This disclosure is useful for substrates on which digital isolators are mounted as insulating devices.

 100、100a、100b  多層基板(基板)
 100c  両面基板(基板)
 101  コア層
 102  第1絶縁層
 103  第2絶縁層
 107  絶縁デバイス(デジタルアイソレータ)
 110  第1導体層
 111、141  第1導体パターン
 111a、121c  第3端子
 112、142  第2導体パターン
 112a、122c  第4端子
 120  第2導体層
 121、121a、121b  第1グランド層
 122、122a、122b  第2グランド層
 123、125、126、127、133、134、135、137  面状パターン
 124、136、138  線状パターン
 130  第3導体層
 131、131a、131b  第1電源層
 131a1、132a1、132b1  凹部
 132、132a、132b  第2電源層
 139  ランド
 140  第4導体層
 150  スルーホール
 D1、D2、D3、D4、D5、D6、D7、D8、D9、D10、D11  距離
 R1  第1電圧領域
 R2  第2電圧領域
 R3  絶縁領域
100, 100a, 100b multilayer substrate (substrate)
100c Double-sided board (board)
101 Core layer 102 First insulating layer 103 Second insulating layer 107 Isolation device (digital isolator)
110 First conductor layer 111, 141 First conductor pattern 111a, 121c Third terminal 112, 142 Second conductor pattern 112a, 122c Fourth terminal 120 Second conductor layer 121, 121a, 121b First ground layer 122, 122a, 122b Second ground layer 123, 125, 126, 127, 133, 134, 135, 137 Planar pattern 124, 136, 138 Linear pattern 130 Third conductor layer 131, 131a, 131b First power supply layer 131a1, 132a1, 132b1 Recess 132, 132a, 132b Second power supply layer 139 Land 140 Fourth conductor layer 150 Through hole D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11 Distance R1 First voltage region R2 Second voltage region R3 Insulation region

Claims (12)

 平面視において第1電圧領域および第2電圧領域を有し、前記第1電圧領域および前記第2電圧領域を電気的に分離するデジタルアイソレータが実装される基板であって、
 コア層と、
 導電体であり、前記コア層の第1主面上において、前記第1電圧領域に設けられる第1グランド層と、
 導電体であり、前記コア層の前記第1主面上において、前記第2電圧領域に設けられる第2グランド層と、
 前記コア層の第2主面上において、前記第1電圧領域に設けられる第1電源層と、
 前記コア層の前記第2主面上において、前記第2電圧領域に設けられる第2電源層と、
 導電体であり、前記基板の平面視において少なくとも一部が互いに重なるように設けられた2つの面状パターンを含む複数の面状パターンと、
 前記平面視において線状である線状パターンと、
を備え、
 前記線状パターンは、前記第1グランド層および前記第1電源層の一方と、前記第2グランド層および前記第2電源層の一方とを結ぶ経路上に設けられ、
 前記線状パターンは、前記2つの面状パターンのうち一方と接続され、
 前記2つの面状パターンと前記線状パターンとを含む共振回路の共振周波数は、前記デジタルアイソレータによる信号伝達に対応した値を有する
 基板。
A substrate having a first voltage region and a second voltage region in a plan view, the substrate having a digital isolator mounted thereon, the digital isolator electrically isolating the first voltage region and the second voltage region,
A core layer;
a first ground layer that is an electric conductor and is provided on a first main surface of the core layer in the first voltage region;
a second ground layer that is an electric conductor and is provided on the first main surface of the core layer in the second voltage region;
a first power supply layer provided in the first voltage region on the second main surface of the core layer;
a second power supply layer provided in the second voltage region on the second main surface of the core layer;
A plurality of planar patterns including two planar patterns that are conductors and are provided so as to at least partially overlap each other in a plan view of the substrate;
A linear pattern that is linear in a plan view;
Equipped with
the linear pattern is provided on a path connecting one of the first ground layer and the first power supply layer to one of the second ground layer and the second power supply layer,
the linear pattern is connected to one of the two planar patterns,
a resonant circuit including the two planar patterns and the linear pattern has a resonant frequency that corresponds to signal transmission by the digital isolator.
 前記複数の面状パターンのうちの前記2つの面状パターンは、
 前記第1グランド層と接続される第1面状パターンと、
 前記第2電源層と接続される第2面状パターンと、
である
 請求項1に記載の基板。
The two planar patterns among the plurality of planar patterns are
a first planar pattern connected to the first ground layer;
a second planar pattern connected to the second power supply layer;
The substrate according to claim 1 .
 前記線状パターンは、
   前記第1面状パターンと前記第1グランド層との間、
   または、
   前記第2面状パターンと前記第2電源層との間、
を接続する、
 請求項2に記載の基板。
The linear pattern is
Between the first planar pattern and the first ground layer,
or
Between the second planar pattern and the second power supply layer,
Connect the
The substrate of claim 2.
 前記複数の面状パターンのうちの前記2つの面状パターンは、
 前記第1グランド層と接続される第1面状パターンと、
 前記第2グランド層と接続される第2面状パターンと、
である
 請求項1に記載の基板。
The two planar patterns among the plurality of planar patterns are
a first planar pattern connected to the first ground layer;
a second planar pattern connected to the second ground layer;
The substrate according to claim 1 .
 前記線状パターンは、
   前記第1面状パターンと前記第1グランド層との間、
   または、
   前記第2面状パターンと前記第2グランド層との間、
を接続する
 請求項4に記載の基板。
The linear pattern is
Between the first planar pattern and the first ground layer,
or
Between the second planar pattern and the second ground layer,
The substrate according to claim 4 , which is connected to
 前記コア層には、前記第1主面から前記第2主面を貫通するスルーホールが設けられ、
 前記第1面状パターンは、前記第2主面上に形成されており、
 前記線状パターンは、前記スルーホールを介して、前記第1面状パターンと前記第1グランド層とを接続する
 請求項5に記載の基板。
the core layer is provided with a through hole penetrating from the first main surface to the second main surface,
the first planar pattern is formed on the second main surface,
The board according to claim 5 , wherein the linear pattern connects the first planar pattern and the first ground layer via the through hole.
 前記複数の面状パターンのうちの前記2つの面状パターンは、
 前記第1電源層と接続される第1面状パターンと、
 前記第2電源層と接続される第2面状パターンと、
である
 請求項1に記載の基板。
The two planar patterns among the plurality of planar patterns are
a first planar pattern connected to the first power supply layer;
a second planar pattern connected to the second power supply layer;
The substrate according to claim 1 .
 前記線状パターンは、
   前記第1面状パターンと前記第1電源層との間、
   または、
   前記第2面状パターンと前記第2電源層との間、
を接続する
 請求項7に記載の基板。
The linear pattern is
Between the first planar pattern and the first power supply layer,
or
Between the second planar pattern and the second power supply layer,
The substrate according to claim 7 .
 前記複数の面状パターンは、第3面状パターンと第4面状パターンとを更に含み、
 前記複数の面状パターンのうちの前記2つの面状パターンは、
 前記第1グランド層および前記第1電源層のうち一方の層と接続される第1面状パターンと、
 前記第2グランド層および前記第2電源層のうち一方の層と接続される第2面状パターンと、
であり、
 前記平面視において、前記第3面状パターンの少なくとも一部は、前記第1面状パターンと重なるように設けられ、
 前記平面視において、前記第4面状パターンの少なくとも一部は、前記第2面状パターンと重なるように設けられ、
 前記線状パターンは、前記第3面状パターンと前記第4面状パターンとの間を接続する
 請求項1に記載の基板。
the plurality of planar patterns further include a third planar pattern and a fourth planar pattern,
The two planar patterns among the plurality of planar patterns are
a first planar pattern connected to one of the first ground layer and the first power supply layer;
a second planar pattern connected to one of the second ground layer and the second power supply layer;
and
In the plan view, at least a portion of the third planar pattern is provided to overlap with the first planar pattern,
In the plan view, at least a portion of the fourth planar pattern is provided to overlap with the second planar pattern,
The substrate according to claim 1 , wherein the linear pattern connects the third planar pattern and the fourth planar pattern.
 前記共振回路の共振周波数は、前記デジタルアイソレータで用いられる搬送波の周波数の信号を通過可能に設定される
 請求項1~9のいずれか1項に記載の基板。
10. The substrate according to claim 1, wherein the resonant frequency of the resonant circuit is set to allow a signal having a carrier frequency used in the digital isolator to pass therethrough.
 前記コア層の前記第1主面上に積層され、前記第1電圧領域および前記第2電圧領域のそれぞれに導体層を有する第1絶縁層と、
 前記コア層の前記第2主面上に積層され、前記第1電圧領域および前記第2電圧領域のそれぞれに導体層を有する第2絶縁層と、
を更に備える
 請求項1~9のいずれか1項に記載の基板。
a first insulating layer laminated on the first main surface of the core layer, the first insulating layer having a conductor layer in each of the first voltage region and the second voltage region;
a second insulating layer laminated on the second main surface of the core layer, the second insulating layer having a conductor layer in each of the first voltage region and the second voltage region;
The substrate according to any one of claims 1 to 9, further comprising:
 前記デジタルアイソレータを更に備える
 請求項1~9のいずれか1項に記載の基板。
The substrate according to claim 1 , further comprising the digital isolator.
PCT/JP2024/016050 2023-06-07 2024-04-24 Substrate Pending WO2024252815A1 (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267702A (en) * 2000-03-14 2001-09-28 Fuji Xerox Co Ltd Printed wiring board
JP2001521160A (en) * 1997-10-23 2001-11-06 アナログ デバイセス インコーポレーテッド Magnetically coupled signal isolator using Faraday shielded MR or GMR receiving element
JP2011172329A (en) * 2010-02-17 2011-09-01 Hitachi Cable Ltd Circuit board, and power conversion device using the same
JP5768941B2 (en) * 2012-10-17 2015-08-26 株式会社村田製作所 High frequency module
JP2017099027A (en) * 2014-10-10 2017-06-01 株式会社村田製作所 Transmission line and flat cable
JP2018011173A (en) * 2016-07-13 2018-01-18 三菱電機株式会社 Digital isolator
JP2020515192A (en) * 2017-03-23 2020-05-21 日本テキサス・インスツルメンツ合同会社 Low loss galvanic isolation circuit element

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001521160A (en) * 1997-10-23 2001-11-06 アナログ デバイセス インコーポレーテッド Magnetically coupled signal isolator using Faraday shielded MR or GMR receiving element
JP2001267702A (en) * 2000-03-14 2001-09-28 Fuji Xerox Co Ltd Printed wiring board
JP2011172329A (en) * 2010-02-17 2011-09-01 Hitachi Cable Ltd Circuit board, and power conversion device using the same
JP5768941B2 (en) * 2012-10-17 2015-08-26 株式会社村田製作所 High frequency module
JP2017099027A (en) * 2014-10-10 2017-06-01 株式会社村田製作所 Transmission line and flat cable
JP2018011173A (en) * 2016-07-13 2018-01-18 三菱電機株式会社 Digital isolator
JP2020515192A (en) * 2017-03-23 2020-05-21 日本テキサス・インスツルメンツ合同会社 Low loss galvanic isolation circuit element

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