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WO2024089777A1 - Système de conversion de longueur d'onde, système laser solide et procédé de fabrication de dispositif électronique - Google Patents

Système de conversion de longueur d'onde, système laser solide et procédé de fabrication de dispositif électronique Download PDF

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Publication number
WO2024089777A1
WO2024089777A1 PCT/JP2022/039779 JP2022039779W WO2024089777A1 WO 2024089777 A1 WO2024089777 A1 WO 2024089777A1 JP 2022039779 W JP2022039779 W JP 2022039779W WO 2024089777 A1 WO2024089777 A1 WO 2024089777A1
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Prior art keywords
light
wavelength
nonlinear optical
optical crystal
crystal
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PCT/JP2022/039779
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English (en)
Japanese (ja)
Inventor
貴幸 小山内
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Gigaphoton Inc
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Gigaphoton Inc
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Priority to PCT/JP2022/039779 priority Critical patent/WO2024089777A1/fr
Priority to CN202280099698.XA priority patent/CN119836596A/zh
Priority to JP2024552562A priority patent/JPWO2024089777A1/ja
Publication of WO2024089777A1 publication Critical patent/WO2024089777A1/fr
Priority to US19/075,082 priority patent/US20250208480A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
    • G02F1/3503—Structural association of optical elements, e.g. lenses, with the non-linear optical device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
    • G02F1/3507—Arrangements comprising two or more nonlinear optical devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/354—Third or higher harmonic generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3544—Particular phase matching techniques
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3551—Crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers

Definitions

  • the present disclosure relates to a wavelength conversion system, a solid-state laser system, and a method for manufacturing an electronic device.
  • gas laser devices used for exposure include KrF excimer laser devices that output laser light with a wavelength of approximately 248 nm, and ArF excimer laser devices that output laser light with a wavelength of approximately 193.4 nm.
  • the spectral linewidth of the natural oscillation light of KrF excimer laser devices and ArF excimer laser devices is wide, at 350 to 400 pm. Therefore, if a projection lens is made of a material that transmits ultraviolet light, such as KrF and ArF laser light, chromatic aberration may occur. As a result, the resolution may decrease. Therefore, it is necessary to narrow the spectral linewidth of the laser light output from the gas laser device to a level where chromatic aberration can be ignored. For this reason, a line narrowing module containing a narrowing element (etalon, grating, etc.) may be provided inside the laser resonator of the gas laser device to narrow the spectral linewidth. A gas laser device in which the spectral linewidth is narrowed in this way is called a narrow-line gas laser device.
  • a narrow-line gas laser device A gas laser device in which the spectral linewidth is narrowed in this way.
  • a wavelength conversion system includes a first nonlinear optical crystal that receives a first light having a first wavelength and outputs a second light having a second wavelength that is a double wave of the first light, a second nonlinear optical crystal that receives the second light and a third light having a third wavelength and outputs a fourth light and the third light having a fourth wavelength that is a sum frequency light of the second light and the third light, a third nonlinear optical crystal that receives the third light and the fourth light and outputs a fifth light having a fifth wavelength that is a sum frequency light of the third light and the fourth light, and a focusing optical system that causes the first light to be incident on the first nonlinear optical crystal so that the beam waist position of the second light is located within the second nonlinear optical crystal, the first nonlinear optical crystal being located within a range of the Rayleigh length of the second light from the beam waist position of the second light, and the third nonlinear optical crystal being located within a range of the Rayleigh length of the
  • a solid-state laser system includes a first nonlinear optical crystal that receives a first light having a first wavelength and outputs a second light having a second wavelength that is a double wave of the first light, a second nonlinear optical crystal that receives the second light and a third light having a third wavelength and outputs a fourth light and the third light having a fourth wavelength that is a sum frequency light of the second light and the third light, a third nonlinear optical crystal that receives the third light and the fourth light and outputs a fifth light having a fifth wavelength that is a sum frequency light of the third light and the fourth light, and a focusing optical system that causes the first light to be incident on the first nonlinear optical crystal such that the beam waist position of the second light is located within the second nonlinear optical crystal,
  • the wavelength conversion system includes a first nonlinear optical crystal arranged within a range of the Rayleigh length of the second light from the beam waist position of the second light, and a third nonlinear optical crystal arranged within
  • a method for manufacturing an electronic device includes a first nonlinear optical crystal that receives a first light having a first wavelength and outputs a second light having a second wavelength that is a double wave of the first light, a second nonlinear optical crystal that receives the second light and a third light having a third wavelength and outputs a fourth light and the third light having a fourth wavelength that is a sum frequency light of the second light and the third light, a third nonlinear optical crystal that receives the third light and the fourth light and outputs a fifth light having a fifth wavelength that is a sum frequency light of the third light and the fourth light, and a beam width of the second light within the second nonlinear optical crystal.
  • the method includes generating laser light using a solid-state laser system including a wavelength conversion system, outputting the laser light to an exposure device, and exposing a photosensitive substrate to the laser light in the exposure device to manufacture an electronic device.
  • FIG. 1 is a diagram illustrating a schematic configuration of a solid-state laser system according to a comparative example.
  • FIG. 2 is a diagram illustrating a schematic configuration of a wavelength conversion system according to a comparative example.
  • FIG. 3 is a schematic diagram of a cell having a nonlinear optical crystal disposed therein.
  • FIG. 4 is a diagram illustrating a schematic configuration of a wavelength conversion system according to the first embodiment.
  • FIG. 5 is a diagram showing the relationship between the Rayleigh length and the beam waist radius.
  • FIG. 6 is a diagram illustrating a schematic configuration of a wavelength conversion system according to the second embodiment.
  • FIG. 7 is a diagram showing a schematic configuration of a periscope optical system.
  • FIG. 8 is a diagram illustrating a schematic configuration of a wavelength conversion system according to the fourth embodiment.
  • FIG. 9 is a diagram illustrating an example of the configuration of an exposure apparatus.
  • the comparative example of the present disclosure is a form that the applicant recognizes as being known only by the applicant, and is not a publicly known example that the applicant acknowledges.
  • Solid-state laser system 1.1.1 Configuration Fig. 1 shows a schematic configuration of a solid-state laser system 10 according to a comparative example.
  • the solid-state laser system 10 includes a signal laser device 2, an amplification system 3, a pump laser device 4, a wavelength conversion system 5, and a solid-state laser control unit 6.
  • the solid-state laser system 10 outputs a pulsed laser beam having a wavelength of approximately 193.4 nm.
  • the signal laser device 2 includes a semiconductor laser 21 and a solid-state amplifier 22.
  • the semiconductor laser 21 oscillates in a single longitudinal mode (CW, Continuous Wave) and outputs CW laser light with a wavelength of approximately 1553 nm.
  • the solid-state amplifier 22 is an amplifier including a semiconductor optical amplifier, and amplifies the CW laser light output from the semiconductor laser 21.
  • the CW laser light with a wavelength of approximately 1553 nm amplified by the solid-state amplifier 22 is incident on the amplification system 3 as the signal laser light S.
  • the pump laser device 4 includes a semiconductor laser 41, a solid-state amplifier 42, an LBO (LiB 3 O 5 ) crystal 43, and a dichroic mirror (DM) 44.
  • the semiconductor laser 41 oscillates in a single longitudinal mode and outputs a CW laser beam having a wavelength of about 1030 nm.
  • the solid-state amplifier 42 is an amplifier including a semiconductor optical amplifier and a Yb-doped YAG crystal, and amplifies the CW laser beam output from the semiconductor laser 41 in a pulsed manner.
  • the LBO crystal 43 is a nonlinear optical crystal that converts the wavelength of the pulsed laser light with a wavelength of approximately 1030 nm generated by pulse amplification using the solid-state amplifier 42, and generates a pulsed laser light with a wavelength of approximately 515 nm, which is the double wave.
  • DM44 is disposed downstream of LBO crystal 43, and highly reflects pulsed laser light with a wavelength of approximately 1030 nm that was not wavelength converted by LBO crystal 43, and highly transmits pulsed laser light with a wavelength of approximately 515 nm incident from LBO crystal 43.
  • the pulsed laser light highly reflected by DM44 is output from pump laser device 4 and enters amplification system 3 as pump laser light P.
  • the pulsed laser light highly transmitted by DM44 is output from pump laser device 4 and enters wavelength conversion system 5 as first pulsed laser light PL1.
  • the amplification system 3 includes an optical parametric amplifier (OPA).
  • OPA optical parametric amplifier
  • the OPA is an amplifier that includes, for example, a periodically poled lithium niobate crystal (PPLN: Periodically Poled Lithium Niobate), a periodically poled potassium titanyl phosphate crystal (PPKTP: Periodically Poled KTP), etc.
  • PPLN periodically poled lithium niobate crystal
  • PPKTP periodically poled potassium titanyl phosphate crystal
  • the OPA pulse-amplifies the signal laser light S incident from the signal laser device 2 based on the pump laser light P incident from the pump laser device 4.
  • the pulse-amplified signal laser light S is output from the amplification system 3 and incident on the wavelength conversion system 5 as a second pulsed laser light PL2.
  • the wavelength conversion system 5 includes a first CLBO (CsLiB 6 O 10 ) crystal 51, a second CLBO crystal 52, a third CLBO crystal 53, and a DM 54 a.
  • the first CLBO crystal 51 is a nonlinear optical crystal that converts the wavelength of the first pulsed laser light PL1 incident from the pump laser device 4 and generates and outputs an ultraviolet pulsed laser light having a wavelength of about 257.5 nm, which is a double wave of the first pulsed laser light PL1.
  • DM54a is disposed downstream of the first CLBO crystal 51, and highly reflects the second pulsed laser light PL2 incident from the amplification system 3, and highly transmits the ultraviolet pulsed laser light incident from the first CLBO crystal 51.
  • DM54a is also disposed so that the highly reflected second pulsed laser light PL2 and the highly transmitted ultraviolet pulsed laser light are incident on the second CLBO crystal 52 coaxially.
  • the second CLBO crystal 52 and the third CLBO crystal 53 are arranged in series, and by performing sum frequency generation twice, a pulsed laser light PL with a wavelength of approximately 193.4 nm is generated and output.
  • the solid-state laser control unit 6 is composed of a processor and is connected to the signal laser device 2, the pump laser device 4, and the wavelength conversion system 5.
  • the solid-state laser control unit 6 is connected to a laser control unit 12 provided outside the solid-state laser system 10.
  • the solid-state laser control unit 6 controls the current value of the semiconductor laser 41 of the pump laser device 4 to cause CW oscillation and output CW laser light with a wavelength of about 1030 nm.
  • the solid-state laser control unit 6 also causes the solid-state amplifier 42 to pulse-amplify the CW laser light output from the semiconductor laser 41.
  • the LBO crystal 43 converts the pulsed laser light with a wavelength of approximately 1030 nm, which is generated by pulse amplification by the solid-state amplifier 42, into a pulsed laser light with a wavelength of approximately 515 nm.
  • the pulsed laser light with a wavelength of approximately 515 nm is highly transmitted through the DM 44 and enters the wavelength conversion system 5 as the first pulsed laser light PL1.
  • the pulsed laser light with a wavelength of approximately 1030 nm that has not been wavelength converted by the LBO crystal 43 is highly reflected by the DM 44 and enters the amplification system 3 as the pump laser light P.
  • the solid-state laser control unit 6 controls the current value of the semiconductor laser 21 of the signal laser device 2 to cause CW oscillation and output CW laser light with a wavelength of approximately 1553 nm.
  • the solid-state laser control unit 6 also amplifies the CW laser light output from the semiconductor laser 21 by the solid-state amplifier 22. As a result, CW laser light with a wavelength of approximately 1553 nm is output from the signal laser device 2 and enters the amplification system 3 as the signal laser light S.
  • the amplification system 3 pulse-amplifies the signal laser light S based on the pump laser light P.
  • the pulse-amplified signal laser light S is incident on the wavelength conversion system 5 as the second pulse laser light PL2.
  • the first pulsed laser light PL1 is converted by the first CLBO crystal 51 into ultraviolet pulsed laser light with a wavelength of approximately 257.5 nm.
  • the ultraviolet pulsed laser light with a wavelength of approximately 257.5 nm is highly transmitted through the DM 54a and enters the second CLBO crystal 52.
  • the second pulsed laser light PL2 is highly reflected by the DM 54a and enters the second CLBO crystal 52.
  • the second CLBO crystal 52 generates and outputs ultraviolet pulsed laser light with a wavelength of approximately 220.9 nm, which is the sum frequency light of the second pulsed laser light PL2 and the ultraviolet pulsed laser light with a wavelength of approximately 257.5 nm.
  • the second CLBO crystal 52 also outputs the second pulsed laser light PL2 that has not been wavelength converted.
  • the second pulsed laser light PL2 output from the second CLBO crystal 52 and the ultraviolet pulsed laser light with a wavelength of approximately 220.9 nm are coaxially incident on the third CLBO crystal 53.
  • the third CLBO crystal 53 generates and outputs pulsed laser light PL with a wavelength of approximately 193.4 nm, which is the sum frequency light of the second pulsed laser light PL2 and the ultraviolet pulsed laser light with a wavelength of approximately 220.9 nm.
  • the pulsed laser light PL is output from the solid-state laser system 10.
  • the pulsed laser light PL output from the solid-state laser system 10 may be amplified by an excimer amplifier (not shown).
  • Fig. 2 shows the configuration of the wavelength conversion system 5 according to the comparative example.
  • the wavelength conversion system 5 includes DMs 54b and 54c, lenses 55a to 55c, high-reflection mirrors 56a and 56b, and a 1/2 wave plate 57.
  • the first to third CLBO crystals 51 to 53 are nonlinear optical crystals that have a type-1 phase matching condition.
  • the first to third CLBO crystals 51 to 53 are configured so that the angle between the optical axis and the optical path axis of the incident laser light is a phase matching angle that satisfies the type-1 phase matching condition.
  • the lens 55a is disposed on the optical path of the first light B1 entering the wavelength conversion system 5 and upstream of the first CLBO crystal 51.
  • the first light B1 is the above-mentioned first pulsed laser light PL1.
  • the first light B1 has a first wavelength ⁇ 1 of about 515 nm.
  • the lens 55a focuses the first light B1 so that a beam waist position P1 of the first light B1 is within the first CLBO crystal 51.
  • the first CLBO crystal 51 is disposed so that the crystal center is at the beam waist position P1.
  • the first CLBO crystal 51 converts the first light B1 having a first wavelength ⁇ 1 into a second light B2 having a second wavelength ⁇ 2 that is a double wave of the first light B1, and outputs the second light B2.
  • the second wavelength ⁇ 2 is about 257.5 nm.
  • the second light B2 is the above-mentioned ultraviolet pulsed laser light having a wavelength of about 257.5 nm.
  • the first CLBO crystal 51 is an example of a "first nonlinear optical crystal" according to the technology of the present disclosure.
  • the beam waist position of the second light B2 is the same as the beam waist position P1 of the first light B1.
  • the second light B2 output from the first CLBO crystal 51 becomes diffuse light that diffuses from the beam waist position P1.
  • the lens 55b is disposed on the optical path of the third light B3 entering the wavelength conversion system 5 and upstream of the DM 54a.
  • the third light B3 is the above-mentioned second pulsed laser light PL2.
  • the third wavelength ⁇ 3 of the third light B3 is about 1553 nm.
  • the lens 55b focuses the third light B3 via the DM 54a so that the beam waist position P3a of the third light B3 is within the second CLBO crystal 52.
  • DM54a is coated with a film that is highly transmissive to the second light B2 and highly reflective to the third light B3.
  • the third light B3 enters DM54a from lens 55b and is highly reflected by DM54a, where it is focused inside the second CLBO crystal 52.
  • the second CLBO crystal 52 is disposed so that the crystal center is at the beam waist position P3a.
  • the second CLBO crystal 52 generates and outputs a fourth light B4, which is a sum frequency light of the second light B2 that has been highly transmitted through the DM 54a and the third light B3 that has been highly reflected by the DM 54a.
  • the fourth wavelength ⁇ 4 of the fourth light B4 is about 220.9 nm.
  • the second CLBO crystal 52 also outputs the third light B3 that has not been wavelength converted.
  • the second CLBO crystal 52 is an example of a "second nonlinear optical crystal" according to the technology of the present disclosure.
  • the second light B2 and the third light B3 incident on the second CLBO crystal 52 are both linearly polarized. Since the second CLBO crystal 52 has a type-1 phase matching condition, the polarization direction of the second light B2 incident on the second CLBO crystal 52 and the polarization direction of the third light B3 must be parallel. If the polarization direction of the second light B2 incident on the second CLBO crystal 52 and the polarization direction of the third light B3 are parallel, the polarization direction of the third light B3 output from the second CLBO crystal 52 is orthogonal to the polarization direction of the fourth light B4.
  • the third CLBO crystal 53 has a type-1 phase matching condition, so the polarization direction of the third light B3 and the polarization direction of the fourth light B4 incident on the third CLBO crystal 53 must be parallel.
  • the polarization direction of the third light B3 and the polarization direction of the fourth light B4 output from the second CLBO crystal 52 are orthogonal to each other, so the polarization direction of either the third light B3 or the fourth light B4 must be rotated by 90°.
  • DMs 54b and 54c, lens 55c, high-reflection mirrors 56a and 56b, and half-wave plate 57 constitute a polarization direction changing optical system 60.
  • the polarization direction changing optical system 60 is disposed between the second CLBO crystal 52 and the third CLBO crystal 53.
  • the polarization direction changing optical system 60 rotates the polarization direction of the third light B3 by 90°, thereby making the polarization direction of the third light B3 parallel to the polarization direction of the fourth light B4.
  • DM54b and 54c are each coated with a film that is highly transmissive to the fourth light B4 and highly reflective to the third light B3.
  • DM54b is disposed downstream of the second CLBO crystal 52 and is an optical path branching element that branches the optical paths of the third light B3 and the fourth light B4 output from the second CLBO crystal 52.
  • DM54c is disposed upstream of the third CLBO crystal 53 and is an optical path joining element that joins the optical paths of the third light B3 and the fourth light B4 whose optical paths are branched by DM54b.
  • DM54b highly transmits the fourth light B4 output from the second CLBO crystal 52.
  • the fourth light B4 that is highly transmitted through DM54b is highly transmitted through DM54c and enters the third CLBO crystal 53.
  • DM54b highly reflects the third light B3 output from the second CLBO crystal 52.
  • the high-reflection mirror 56a is disposed on the optical path of the third light B3 highly reflected by the DM 54b, and highly reflects the third light B3.
  • the lens 55c is disposed downstream of the high-reflection mirror 56a, and focuses the third light B3 via the high-reflection mirror 56a and the DM 54c so that the beam waist position P3b of the third light B3 highly reflected by the high-reflection mirror 56a is within the third CLBO crystal 53.
  • the high-reflection mirror 56b is disposed downstream of the lens 55c and highly reflects the third light B3.
  • the half-wave plate 57 is disposed downstream of the high-reflection mirror 56b and rotates the polarization direction of the third light B3 that is highly reflected by the high-reflection mirror 56b by 90°.
  • DM54c is disposed downstream of the half-wave plate 57, and highly reflects the third light B3, whose polarization direction has been rotated by 90°, and causes it to enter the third CLBO crystal 53. As a result, the polarization direction of the third light B3 and the polarization direction of the fourth light B4 entering the third CLBO crystal 53 become parallel.
  • the third CLBO crystal 53 is disposed so that the crystal center is at the beam waist position P3b.
  • the third CLBO crystal 53 generates and outputs a fifth light B5 which is a sum frequency light of the third light B3 and the fourth light B4.
  • the fifth light B5 is the above-mentioned pulsed laser light PL.
  • the fifth wavelength ⁇ 5 of the fifth light B5 is about 193.4 nm.
  • the third CLBO crystal 53 is an example of a "third nonlinear optical crystal" according to the technology of the present disclosure.
  • the first to fifth wavelengths ⁇ 1 to ⁇ 5 have a relationship of ⁇ 3 > ⁇ 1 > ⁇ 2 > ⁇ 4 > ⁇ 5 .
  • the second CLBO crystal 52 is disposed within a range in which the second light B2, which is incident ultraviolet light, can be regarded as parallel light.
  • the third CLBO crystal 53 is disposed within a range in which the fourth light B4, which is incident ultraviolet light, can be regarded as parallel light. Since the second light B2 and the fourth light B4 are diffused lights diffusing from the beam waist position P1, the second CLBO crystal 52 and the third CLBO crystal 53 are disposed within a range of the Rayleigh length zR1 downstream from the beam waist position P1.
  • the Rayleigh length represents a distance in which the pulsed laser light can be regarded as parallel light.
  • the cell 70 includes a housing 71, an entrance window 72, an exit window 73, a crystal holder 74, and a heater 75.
  • the entrance window 72 and the exit window 73 are attached to the housing 71.
  • the crystal holder 74 is provided inside the housing 71 and holds a nonlinear optical crystal on the optical path of the pulsed laser light passing through the entrance window 72 and the exit window 73.
  • the heater 75 is attached to the crystal holder 74 and is connected to a heater power supply 76 provided outside the cell 70. The heater 75 heats the nonlinear optical crystal.
  • a gas inlet pipe 77a for introducing a purge gas such as Ar gas into the housing 71, and a gas exhaust pipe 77b for exhausting the purge gas from inside the housing 71 are connected to the housing 71.
  • the gas inlet pipe 77a is connected to a gas supply device 78a.
  • the gas exhaust pipe 77b is connected to a gas exhaust device 78b.
  • the cell 70 is used while being purged with a purge gas and the temperature of the nonlinear optical crystal is maintained at about 150°C by the heater 75. Therefore, in order to place the first to third CLBO crystals 51 to 53 in the wavelength conversion system 5, the volume of the cell 70 must be taken into consideration and an optical path length for placing the cell 70 must be secured before and after the nonlinear optical crystal.
  • relay lens optical system it is possible to use a relay lens optical system to ensure the optical path length required to position the cell 70.
  • the relay lens optical system must propagate the pulsed laser light, which is ultraviolet light, and the lens is deteriorated by the ultraviolet light. This results in a shortened lifespan of the wavelength conversion system 5.
  • the absorption of ultraviolet light by the lens creates a thermal lens effect, which causes changes in the beam diameter and beam waist position.
  • surface reflection occurs at the lens, which reduces the output of the pulsed laser light. For these reasons, it is not preferable to use a relay lens optical system.
  • the multiple nonlinear optical crystals included in the wavelength conversion system 5 within a range of the Rayleigh length from the beam waist position of the incident pulsed laser light.
  • the second CLBO crystal 52 and the third CLBO crystal 53 are arranged within a range of the Rayleigh length zR1 downstream from the beam waist position P1 located at the crystal center of the first CLBO crystal 51.
  • the wavelength conversion system 5 having multiple hygroscopic nonlinear optical crystals such as CLBO crystals has a problem in that the optical path length that allows multiple nonlinear optical crystals to be arranged is short from the perspective of increasing the efficiency of wavelength conversion, and the degree of design freedom is very low.
  • the solid-state laser system 10 according to the first embodiment differs from the solid-state laser system 10 according to the comparative example only in the configuration of the wavelength conversion system.
  • the same components as those in the comparative example are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
  • Fig. 4 shows the configuration of the wavelength conversion system 5a according to the first embodiment.
  • the wavelength conversion system 5a includes first to third CLBO crystals 51 to 53, DMs 54a to 54c, lenses 55a to 55c, high-reflection mirrors 56a and 56b, and a 1/2 wave plate 57, similar to the wavelength conversion system 5 according to the comparative example.
  • the lens 55a causes the first light B1 to be incident on the first CLBO crystal 51 such that the beam waist position P2 of the second light B2 generated in the first CLBO crystal 51 is located within the second CLBO crystal 52. That is, the lens 55a focuses the first light B1, so that the second light B2 is focused within the second CLBO crystal 52. It is preferable that the second CLBO crystal 52 is positioned so that the crystal center is at the beam waist position P2.
  • the lens 55a is an example of a "focusing optical system" according to the technology disclosed herein.
  • the focusing optical system is not limited to one lens, and may be composed of an optical system including two or more lenses, mirrors, etc.
  • the beam waist position of the fourth light B4 generated by the second CLBO crystal 52 is the same as the beam waist position P2 of the second light B2.
  • the fourth light B4 output from the second CLBO crystal 52 becomes diffuse light that diffuses from the beam waist position P2.
  • the first CLBO crystal 51 is disposed upstream of the second CLBO crystal 52 and within a range from the beam waist position P2 to the Rayleigh length zR2 of the second light B2. Specifically, the first CLBO crystal 51 is disposed so that a surface 51a on which light of the first CLBO crystal 51 is incident is within a range from the beam waist position P2 to the Rayleigh length zR2 of the second light B2.
  • the third CLBO crystal 53 is disposed downstream of the second CLBO crystal 52 and within a range from the beam waist position P2 to the Rayleigh length zR4 of the fourth light B4. Specifically, the third CLBO crystal 53 is disposed so that a surface 53a from which light of the third CLBO crystal 53 exits is within a range from the beam waist position P2 to the Rayleigh length zR4 of the fourth light B4.
  • Fig. 5 shows the relationship between the Rayleigh length zR and the beam waist radius ⁇ when a laser beam, which is a collimated beam, is incident on the lens 90.
  • the beam waist of the laser light focused by the lens 90 occurs at a position that is a focal distance f from the lens 90.
  • the beam waist radius ⁇ is the beam radius of the laser light at the beam waist position. More specifically, the beam waist radius ⁇ is the beam radius at a position where the radiation intensity is 1/ e2 times the peak radiation intensity at the beam center.
  • n is the refractive index of the medium through which the laser light propagates.
  • ⁇ is the beam divergence angle.
  • the beam waist radius ⁇ is expressed by the following formula (4).
  • the beam waist radius ⁇ 2 of the second light B2 needs to satisfy the following formula (6).
  • the numerical aperture NA2 of the second light B2 needs to satisfy the following expression (7).
  • the beam waist position of the first light B1 coincides with the beam waist position P2 of the second light B2, and that the beam waist radius ⁇ 1 of the first light B1 satisfies the following formula (10).
  • the numerical aperture NA1 of the first light B1 is expressed by the following formula (11).
  • the beam waist radius ⁇ 2 of the second light B2 is set so as to satisfy the above formula (6) for the distance L1
  • the numerical aperture NA2 of the second light B2 is set so as to satisfy the above formula (7).
  • the lens 55a that collects the first light B1 may be one in which the beam waist radius ⁇ 1 of the first light B1 satisfies the above formula (10) and the numerical aperture NA1 is ⁇ 2 times the numerical aperture NA2 of the second light B2.
  • the lens 55a may be selected to have a numerical aperture NA1 expressed by the following formula (12).
  • the lens 55a causes the first light B1 to be incident on the first CLBO crystal 51 so that the beam waist position P2 of the second light B2 generated by the first CLBO crystal 51 is located within the second CLBO crystal 52. Therefore, the first CLBO crystal 51 can be located within a range of the Rayleigh length zR2 of the second light B2 on the upstream side from the beam waist position P2. Also, the third CLBO crystal 53 can be located within a range of the Rayleigh length zR4 of the fourth light B4 on the downstream side from the beam waist position P2.
  • the optical path length that allows multiple nonlinear optical crystals to be arranged is expanded from the viewpoint of increasing the efficiency of wavelength conversion, so that the design freedom of the wavelength conversion system 5a can be improved without reducing the wavelength conversion efficiency.
  • each of the multiple nonlinear optical crystals can be arranged inside the cell without using a relay lens optical system.
  • the solid-state laser system 10 according to the second embodiment differs from the solid-state laser system 10 according to the first embodiment only in the configuration of the wavelength conversion system.
  • the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
  • Fig. 6 shows the configuration of the wavelength conversion system 5b according to the second embodiment.
  • the wavelength conversion system 5b includes first to third CLBO crystals 51 to 53, DMs 54a to 54e, lenses 55a to 55c, a high-reflection mirror 56b, a 1/2 wavelength plate 57, and dampers 58a to 58c.
  • the first to third CLBO crystals 51 to 53 are nonlinear optical crystals having a type-1 phase matching condition.
  • the first to third CLBO crystals 51 to 53 are arranged in a straight line, but in this embodiment, the first to third CLBO crystals 51 to 53 are arranged in a non-linear line. Also, in this embodiment, light that has not been wavelength converted by the first to third CLBO crystals 51 to 53 is absorbed by dampers 58a to 58c.
  • the lens 55a causes the first light B1 to be incident on the first CLBO crystal 51 so that the beam waist position P2 of the second light B2 generated in the first CLBO crystal 51 is located within the second CLBO crystal 52.
  • the first CLBO crystal 51 is located within a range of the Rayleigh length zR2 of the second light B2 on the upstream side from the beam waist position P2.
  • the third CLBO crystal 53 is located within a range of the Rayleigh length zR4 of the fourth light B4 on the downstream side from the beam waist position P2.
  • the DM 54a is coated with a film that is highly reflective of the second light B2 and highly transmissive of the first light B1 and the third light B3.
  • the second light B2 that enters the first CLBO crystal 51 from the lens 55a and is generated in the first CLBO crystal 51 is highly reflected by the DM 54a and focused in the second CLBO crystal 52.
  • the third light B3 that enters the DM 54a from the lens 55b is highly transmissive through the DM 54a and focused in the second CLBO crystal 52.
  • the damper 58a is disposed on the optical path of the first light B1 that is not wavelength converted by the first CLBO crystal 51 and is highly transmitted through the DM 54a, and absorbs the first light B1.
  • the second CLBO crystal 52 is disposed on the optical path of the second light B2 that is highly reflected by the DM 54a and the third light B3 that is highly transmitted through the DM 54a. As in the first embodiment, the second CLBO crystal 52 generates the fourth light B4, which is the sum frequency light of the second light B2 and the third light B3.
  • the polarization direction changing optical system 60a is composed of the DMs 54b to 54d, the lens 55c, the high reflection mirror 56b, and the half-wave plate 57.
  • the fourth light B4 output from the second CLBO crystal 52, and the second light B2 and third light B3 that have not been wavelength converted by the second CLBO crystal 52 are incident on the polarization direction changing optical system 60a.
  • DM54b is an optical path branching element.
  • DM54b is disposed downstream of the second CLBO crystal 52, and highly reflects the second light B2 and the fourth light B4, and highly transmits the third light B3.
  • DM54d is disposed on the optical path of the second light B2 and the fourth light B4 that are highly reflected by DM54b, and highly reflects the fourth light B4 and highly transmits the second light B2.
  • Damper 58b is disposed on the optical path of the second light B2 that is highly transmitted by DM54d, and absorbs the second light B2.
  • Lens 55c is disposed on the optical path of the third light B3 that has been highly transmitted through DM 54b, and focuses the third light B3 inside the third CLBO crystal 53.
  • High-reflection mirror 56b is disposed downstream of lens 55c, and highly reflects the third light B3.
  • Half-wave plate 57 is disposed downstream of high-reflection mirror 56b, and rotates the polarization direction of the third light B3 that has been highly reflected by high-reflection mirror 56b by 90°.
  • DM54c is an optical path combining element.
  • DM54c is disposed downstream of half-wave plate 57, and highly transmits third light B3, whose polarization direction has been rotated by 90°, and causes it to enter third CLBO crystal 53.
  • DM54c is also disposed on the optical path of fourth light B4, which has been highly reflected by DM54d, and highly reflects fourth light B4, causing it to enter third CLBO crystal 53.
  • the third CLBO crystal 53 generates and outputs a fifth light B5, which is the sum frequency light of the third light B3 and the fourth light B4.
  • the DM 54e is disposed downstream of the third CLBO crystal 53, and highly reflects the fifth light B5 and highly transmits the third light B3 and the fourth light B4.
  • the damper 58c is disposed on the optical path of the third light B3 and the fourth light B4 that have been highly transmitted through the DM 54e, and absorbs the third light B3 and the fourth light B4.
  • each of the DMs 54a to 54e may be the opposite of that described above.
  • the arrangement of the multiple components included in the wavelength conversion system 5b can be modified in various ways.
  • the optical path length that enables the arrangement of multiple nonlinear optical crystals from the viewpoint of high efficiency of wavelength conversion is expanded. This improves the design freedom, so that the dichroic mirror, damper, etc. can be arranged efficiently.
  • the solid-state laser system 10 according to the third embodiment differs from the solid-state laser system 10 according to the first embodiment only in the configuration of the wavelength conversion system.
  • the wavelength conversion system according to this embodiment is the wavelength conversion system 5a according to the first embodiment, in which the 1/2 wavelength plate 57 included in the polarization direction changing optical system 60 is replaced with a periscope optical system 80 shown in Fig. 7.
  • the symbol D indicates the polarization direction of the third light B3.
  • the X direction, the Y direction, and the Z direction are orthogonal to each other.
  • the periscope optical system 80 includes a first periscope mirror 81 and a second periscope mirror 82.
  • the first periscope mirror 81 is disposed on the optical path of the third light B3, and deflects the optical path by 90° by highly reflecting the third light B3.
  • the second periscope mirror 82 is disposed on the optical path of the third light B3 that is highly reflected by the first periscope mirror 81, and deflects the optical path by 90° by highly reflecting the third light B3.
  • the second periscope mirror 82 is disposed so as to reflect the third light B3 in a direction perpendicular to the direction in which the third light B3 is incident on the first periscope mirror 81.
  • the third light B3 travels in the X direction and enters the first periscope mirror 81, where it is highly reflected in the Z direction.
  • the polarization direction D of the third light B3 is the Y direction.
  • the optical path of the third light B3 is changed by the high reflection at the first periscope mirror 81, but the polarization direction D is not changed.
  • the third light B3 that is highly reflected at the first periscope mirror 81 travels in the Z direction and enters the second periscope mirror 82, where it is highly reflected in the Y direction.
  • the polarization direction D rotates by 90° due to the high reflection at the second periscope mirror 82.
  • the periscope optical system 80 like the half-wave plate 57, can rotate the polarization direction of the third light B3 by 90 degrees.
  • the periscope optical system 80 may be configured using three or more periscope mirrors.
  • the half-wave plate 57 is a light-transmitting element, so there is a possibility that the polarization direction may be affected by thermal load.
  • the periscope optical system 80 is composed of a periscope mirror, which is a light-reflecting element, so thermal load is unlikely to occur, and it is possible to suppress the effect of thermal load on the polarization direction.
  • a periscope optical system 80 may be used instead of the half-wave plate 57 included in the polarization direction changing optical system 60a of the wavelength conversion system 5b according to the second embodiment.
  • the solid-state laser system 10 according to the fourth embodiment differs from the solid-state laser system 10 according to the second embodiment only in the configuration of the wavelength conversion system.
  • the same components as those in the second embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.
  • Fig. 8 shows the configuration of the wavelength conversion system 5c according to the fourth embodiment.
  • the wavelength conversion system 5c includes first to third CLBO crystals 51 to 53, DMs 54a, 54d, and 54e, lenses 55a and 55b, a high-reflection mirror 56d, and dampers 58a to 58c.
  • the first CLBO crystal 51 and the third CLBO crystal 53 are nonlinear optical crystals having a type-1 phase matching condition.
  • the second CLBO crystal 52 is a nonlinear optical crystal having a type-2 phase matching condition.
  • the second CLBO crystal 52 is configured so that the angle between the optical axis and the optical path axis of the incident laser light is a phase matching angle that satisfies the type-2 phase matching condition.
  • the second CLBO crystal 52 since the second CLBO crystal 52 has a type-2 phase matching condition, the polarization directions of the second light B2 and the third light B3 incident on the second CLBO crystal 52 are made orthogonal. As a result, the polarization directions of the third light B3 and the fourth light B4 output from the second CLBO crystal 52 are parallel, so there is no need to provide a polarization direction changing optical system 60a as in the second embodiment.
  • the wavelength conversion system 5c does not include a polarization direction changing optical system 60a.
  • a DM 54d Downstream of the second CLBO crystal 52, a DM 54d is disposed, which highly reflects the second light B2 and highly transmits the third light B3 and the fourth light B4.
  • the third light B3 and the fourth light B4 that have been highly transmitted through the DM 54d enter the third CLBO crystal 53 with their polarization directions parallel.
  • the damper 58b is disposed on the optical path of the second light B2 that has been highly reflected by the DM 54d, and absorbs the second light B2.
  • DM54e is disposed downstream of the third CLBO crystal 53, highly reflects the fifth light B5, and highly transmits the third light B3 and the fourth light B4.
  • the high-reflection mirror 56d is disposed on the optical path of the fifth light B5 that is highly reflected by DM54e, and highly reflects the fifth light B5.
  • lens 55c is not provided, so lens 55b is configured to focus the third light B3 between the second CLBO crystal 52 and the third CLBO crystal 53.
  • the rest of the configuration of the wavelength conversion system 5c is the same as that of the wavelength conversion system 5b.
  • the relationship between reflection and transmission of the DMs 54a, 54d, and 54e may be the opposite of that described above.
  • the arrangement of the multiple components included in the wavelength conversion system 5c can be modified in various ways.
  • the high-reflection mirror 56d is not an essential component.
  • the second CLBO crystal 52 is a nonlinear optical crystal having a type-2 phase matching condition, there is no need to provide the half-wave plate 57 as in the second embodiment. This makes it possible to suppress the effect of the thermal load on the polarization direction.
  • FIG. 9 shows a schematic configuration example of an exposure apparatus 100.
  • the exposure apparatus 100 includes an illumination optical system 104 and a projection optical system 106.
  • the illumination optical system 104 illuminates a reticle pattern of a reticle (not shown) arranged on a reticle stage RT with, for example, a pulsed laser light PL incident from a solid-state laser system 10.
  • the projection optical system 106 reduces and projects the pulsed laser light PL transmitted through the reticle to form an image on a workpiece (not shown) arranged on a workpiece table WT.
  • the workpiece is a photosensitive substrate such as a semiconductor wafer coated with photoresist.
  • the exposure apparatus 100 exposes the workpiece to pulsed laser light PL reflecting the reticle pattern by synchronously translating the reticle stage RT and the workpiece table WT. After the reticle pattern is transferred to the semiconductor wafer by the exposure process described above, a semiconductor device can be manufactured through multiple processes.
  • a semiconductor device is an example of an "electronic device" in this disclosure.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
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  • Electromagnetism (AREA)
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  • Engineering & Computer Science (AREA)
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Abstract

Un système de conversion de longueur d'onde selon un aspect de la présente divulgation comprend : un premier cristal optique non linéaire (51) sur lequel une première lumière (B1) ayant une première longueur d'onde est incidente, et qui délivre une deuxième lumière (B2) ayant une deuxième longueur d'onde qui est une seconde harmonique de la première lumière ; un deuxième cristal optique non linéaire (52) sur lequel la deuxième lumière (B2) et la troisième lumière (B3) ayant une troisième longueur d'onde sont incidentes, et qui délivre la troisième lumière (B3) et la quatrième lumière (B4) ayant une quatrième longueur d'onde qui est la lumière de fréquence somme de la deuxième lumière et de la troisième lumière ; un troisième cristal optique non linéaire (53) sur lequel la troisième lumière (B3) et la quatrième lumière (B4) sont incidentes, et qui délivre en sortie une cinquième lumière (B5) ayant une cinquième longueur d'onde qui est la lumière de fréquence somme de la troisième lumière et de la quatrième lumière ; un système optique de condensation de lumière (55a) qui amène la première lumière (B1) à être incidente sur le premier cristal optique non linéaire (51) de telle sorte que la position de taille de faisceau de la deuxième lumière (B2) est disposée à l'intérieur du deuxième cristal optique non linéaire (52). Le premier cristal optique non linéaire (51) est disposé dans une plage dans la longueur de Rayleigh (zR2) de la deuxième lumière à partir de la position de taille de faisceau (P2) de la deuxième lumière, et le troisième système optique non linéaire (53) est disposé dans une plage dans la longueur de Rayleigh (zR4) de la quatrième lumière à partir de la position de taille de faisceau (P2) de la deuxième lumière.
PCT/JP2022/039779 2022-10-25 2022-10-25 Système de conversion de longueur d'onde, système laser solide et procédé de fabrication de dispositif électronique Ceased WO2024089777A1 (fr)

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CN202280099698.XA CN119836596A (zh) 2022-10-25 2022-10-25 波长转换系统、固体激光系统以及电子器件的制造方法
JP2024552562A JPWO2024089777A1 (fr) 2022-10-25 2022-10-25
US19/075,082 US20250208480A1 (en) 2022-10-25 2025-03-10 Wavelength conversion system, solid-state laser system, and electronic device manufacturing method

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130063807A1 (en) * 2010-05-04 2013-03-14 Danmarks Tekniske Universitet Up -conversion of electromagnetic radiation within a wavelength range
WO2019186767A1 (fr) * 2018-03-28 2019-10-03 ギガフォトン株式会社 Système de conversion de longueur d'onde et procédé de traitement
JP2019529973A (ja) * 2016-08-25 2019-10-17 コヒーレント カイザースラウテルン ゲーエムベーハー モジュラー式紫外線パルスレーザ源
WO2021049020A1 (fr) * 2019-09-13 2021-03-18 ギガフォトン株式会社 Système de conversion de longueur d'onde, système laser et procédé de fabrication de dispositif électronique

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130063807A1 (en) * 2010-05-04 2013-03-14 Danmarks Tekniske Universitet Up -conversion of electromagnetic radiation within a wavelength range
JP2019529973A (ja) * 2016-08-25 2019-10-17 コヒーレント カイザースラウテルン ゲーエムベーハー モジュラー式紫外線パルスレーザ源
WO2019186767A1 (fr) * 2018-03-28 2019-10-03 ギガフォトン株式会社 Système de conversion de longueur d'onde et procédé de traitement
WO2021049020A1 (fr) * 2019-09-13 2021-03-18 ギガフォトン株式会社 Système de conversion de longueur d'onde, système laser et procédé de fabrication de dispositif électronique

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