WO2023211110A1 - Composition for cleaning metal mask and cleaning method using same - Google Patents
Composition for cleaning metal mask and cleaning method using same Download PDFInfo
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- WO2023211110A1 WO2023211110A1 PCT/KR2023/005599 KR2023005599W WO2023211110A1 WO 2023211110 A1 WO2023211110 A1 WO 2023211110A1 KR 2023005599 W KR2023005599 W KR 2023005599W WO 2023211110 A1 WO2023211110 A1 WO 2023211110A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H10P95/00—
Definitions
- Examples relate to a composition for cleaning a metal mask and a cleaning method using the same.
- OLED Organic light emitting diodes
- An OLED display is composed of several layers, including a TFT (Thin Film Transistor) element, organic materials, an encapsulation layer, and a cover window, and this multilayer structure can be formed by a deposition method using a mask.
- Masks used in the deposition process when manufacturing OLED displays include open masks (OM) and fine metal masks (FMM), and metal materials are generally used.
- the open mask is used in the process of depositing an organic film on an OLED substrate to form a light emitting layer during the display manufacturing process
- the fine metal mask is a thin metal plate with ultra-fine holes in red, green, and blue. It serves to guide the (Blue) organic luminescent material to pass through the hole and be deposited at the desired location on the substrate. Since the accuracy of deposition performed through such a mask is directly related to production yield, accurate processing of the mask is important.
- Representative methods of manufacturing metal masks include the etching method, which involves rolling a metal plate thinly and then cutting off unnecessary parts, or the electro-forming method, which involves plating a patterned substrate using the principles of electroplating.
- the etching method which involves rolling a metal plate thinly and then cutting off unnecessary parts
- the electro-forming method which involves plating a patterned substrate using the principles of electroplating.
- there are other limitations such as selective etching, so in order to achieve high resolution 1000 ppi suitable for implementing virtual reality (VR) and augmented reality (AR) in addition to ultra-high definition (UHD) level 800 ppi, patterns are manufactured by drilling holes using a laser. Laser patterning methods are gaining prominence.
- embodiments provide a cleaning composition that can selectively clean the base material of a metal mask processed by a laser without damaging it, and does not contain environmentally regulated substances.
- the purpose is to provide a composition and cleaning method.
- examples include 70 to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; and a remaining amount of water. It provides a composition for cleaning a metal mask comprising:
- a composition for cleaning a metal mask which additionally includes 0.001 to 1% by weight of a corrosion inhibitor based on the total weight of the composition.
- a composition for cleaning a metal mask which additionally includes 0.01 to 0.1% by weight of a corrosion inhibitor based on the total weight of the composition.
- the phosphonic acid metal chelating agent includes DTPMPA (Diethylenetriamine penta(Methylene phosphonic acid)), ATMP (Aminotri(methylene phosphonic acid)), HEDP (1-Hydroxyethylidene-1,1-diphosphonic acid), Characterized by comprising at least one selected from the group consisting of HMDTMPA (Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA (2-Phosphonobutane-1,2,4-tricarboxylic acid), and EDTMP (Ethylenediamine tetra(methylene phosphonic acid)) do.
- DTPMPA Diethylenetriamine penta(Methylene phosphonic acid)
- ATMP Aminotri(methylene phosphonic acid)
- HEDP 1-Hydroxyethylidene-1,1-diphosphonic acid
- the corrosion inhibitor is benzotriazole, 1-Amino-benzotriazole, and 1-Hydroxy-benzotriazole. ), 5-Methyl-1H-benzotriazole, and benzotriazole-5-carboxylic acid. Do it as
- the cleaning may be performed to remove oxide formed when laser irradiation is applied to the metal mask.
- the oxides include iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), and SUS (Steel Use). It may be an oxide of at least one metal selected from the group consisting of Stainless alloy, Inconel alloy, Kovar alloy, and Invar alloy.
- the base material of the metal mask is iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum ( It may contain at least one metal selected from Mo), SUS (Steel Use Stainless) alloy, Inconel alloy, Kovar alloy, and Invar alloy.
- a method for cleaning a metal mask including the step of bringing the above-described cleaning composition into contact with the metal mask.
- the cleaning method according to one embodiment may be performed by bringing the cleaning composition into contact with the metal mask using at least one of a spray method, a dipping method, and an ultrasonic method.
- the cleaning method according to one embodiment may include a first step performed for 5 to 30 minutes at a temperature of 10 to 50° C. using the dipping method.
- the cleaning method according to one embodiment may include, after the first step, a second step performed by applying ultrasonic waves using distilled water at a temperature of 10 to 50° C. for 5 to 30 minutes.
- the metal mask cleaning composition and cleaning method of the embodiment it is possible to provide a cleaning composition and cleaning method that can selectively clean the base material of a metal mask processed by a laser without damaging it.
- the cleaning composition of the present invention and the cleaning method using the same can remove metal oxides with higher cleaning power without damaging the base material of the fine metal mask processed by a laser.
- the examples can provide a cleaning composition and cleaning method that do not contain environmentally regulated substances.
- Figure 1 is a photograph of an ultrasonic bath to check corrosiveness after cleaning using a conventional cleaning composition.
- Figures 2a to 2e are photographs taken to confirm the apparent cleanability of a metal mask after cleaning using a cleaning composition according to an experimental example.
- Figures 3a and 3b are SEM images before and after cleaning the metal mask using the composition of Comparative Example 1, respectively (before cleaning: Figure 3a, after cleaning: Figure 3b).
- Figure 4a is an SEM photograph after cleaning the metal mask using the composition of Comparative Example 1.
- Figure 4b is an SEM photograph after cleaning the metal mask using the composition of Example 2.
- Figures 5a and 5b are SEM images before and after cleaning the metal mask using the composition according to Example 5, respectively.
- Figures 5c and 5d are SEM images before and after cleaning the metal mask using the composition according to Example 5, respectively.
- Figure 6a is an SEM photograph after cleaning the metal mask using the composition of Comparative Example 4.
- Figure 6b is an SEM photograph after cleaning the metal mask using the composition of Comparative Example 5.
- the metal mask cleaning composition includes 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; and the remaining amount of water.
- the phosphonic acid metal chelating agent can exhibit improved metal mask cleaning ability by being included in a relatively high content, that is, 70 to 90% by weight based on the total weight of the cleaning composition.
- Strong acids such as sulfuric acid, phosphoric acid, and hydrochloric acid included in conventional cleaning compositions are problematic because they generate harmful substances such as SO
- the metal mask cleaning composition of the example can exhibit excellent cleaning ability without damaging the base material of the metal mask, and is not an environmentally regulated substance.
- the cleaning composition of the example has the advantage of being non-corrosive to stainless steel (SUS)-based ultrasonic bath materials.
- the metal mask cleaning composition of the example contains a phosphonic acid metal chelating agent and can exhibit very effective cleaning power while exhibiting strong acidity of pH 1.0 or less. In particular, it has high cleaning power without damaging the metal mask of the Invar base material. represents.
- the phosphonic acid metal chelating agent includes Diethylenetriamine penta(methylene phosphonic acid) (DTPMPA), Aminotri(methylene phosphonic acid) (ATMP), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), and HMDTMPA ( It is characterized in that it contains one or more selected from the group consisting of Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA (2-phosphonobutane-1,2,4-tricarboxylic acid), and EDTMP (Ethylenediamine tetra(methylene phosphonic acid)) .
- DTPMPA Diethylenetriamine penta(methylene phosphonic acid)
- ATMP Aminotri(methylene phosphonic acid)
- HEDP 1-hydroxyethylidene-1,1-diphosphonic acid
- HMDTMPA HMDTMPA
- a phosphonic acid metal chelating agent contained in an amount of 70% to 90% by weight based on the total weight of the composition; and a remaining amount of water; in the metal mask cleaning composition according to one embodiment including a remaining amount of water, the remaining amount of water refers to the remaining weight% excluding the metal chelating agent when the cleaning composition is 100% by weight.
- the metal mask cleaning composition according to one embodiment may additionally include 0.001 to 1% by weight of a corrosion inhibitor based on the total weight of the composition, and more preferably 0.01 to 0.1% by weight based on the total weight of the composition. can do.
- a phosphonic acid metal chelating agent contained in an amount of 70% to 90% by weight based on the total weight of the composition; 0.001 to 1% by weight of corrosion inhibitor; and a remaining amount of water. More preferably, the phosphonic acid metal chelating agent is included in an amount of 70% to 90% by weight based on the total weight of the composition; 0.01 to 0.1% by weight of corrosion inhibitor; and a remaining amount of water.
- the remaining amount of water refers to the remaining weight% excluding the content of the phosphonic acid metal chelating agent and corrosion inhibitor, based on 100% by weight of the cleaning composition.
- composition for cleaning a metal mask according to one embodiment has the advantage of showing little corrosiveness to the base material of the metal mask as it contains a corrosion inhibitor in the above content range.
- the corrosion inhibitor is characterized in that it includes at least one of an azole-based corrosion inhibitor and an ethanolamine-based corrosion inhibitor, but is not limited thereto.
- the azole-based corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, benzotriazole compounds, imidazole compounds, tetrazole compounds, thiazole compounds, oxazole compounds, and pyrazole compounds.
- the ethanolamine-based corrosion inhibitor may include at least one selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine.
- the corrosion inhibitor includes a benzotriazole compound.
- benzotriazole 1-Amino-benzotriazole, 1-Hydroxy-benzotriazole, 5-methyl-1H-benzotriazole It is characterized in that it contains at least one selected from the group consisting of (5-Methyl-1H-benzotriazole) and benzotriazole-5-carboxylic acid.
- the metal mask cleaning composition of the example preferably contains 0.01 to 0.1% by weight of the benzotriazole compound based on the total weight of the composition, and the metal mask cleaning composition of this composition is particularly suitable for use on metals made of Invar. It does not cause etching or pit corrosion to the mask itself and does not show corrosion to cleaning equipment.
- the cleaning equipment may be SUS 304 or SUS 316, which are commonly used as materials for ultrasonic baths, but is not limited thereto.
- composition for cleaning a metal mask is to remove oxide formed when a laser is irradiated to a metal mask during metal mask processing. That is, when a laser is irradiated to a metal mask, the base material of the metal mask is oxidized due to a high-temperature reaction of the laser to generate metal oxide, and the cleaning composition of the example removes such oxide.
- the oxides include iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), SUS (Steel Use Stainless) alloy, Inconel ( It may be an oxide of at least one metal selected from Inconel alloy, Kovar alloy, and Invar alloy.
- the base material of the metal mask is iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), and SUS (Steel). It may contain at least one metal selected from Use Stainless alloy, Inconel alloy, Kovar alloy, and Invar alloy.
- the base material of the metal mask may be Invar alloy.
- Invar alloy's main ingredients are iron (Fe) and nickel (Ni), and it has the advantage of having less thermal expansion than SUS alloy and not significantly reducing tension even at high temperatures, making it more desirable for use as a base material for metal masks.
- the cleaning composition of the example is used on a metal mask whose base material is an Invar alloy, it is more preferable because it is less corrosive and has higher cleaning properties.
- the cleaning method of the present invention includes 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; and the step of contacting the metal mask with a cleaning composition containing a residual amount of water.
- a metal mask cleaning method may be performed by bringing the cleaning composition into contact with the metal mask using at least one of a spray method, a dipping method, and an ultrasonic method, but is limited to the above-described method. It doesn't work.
- the spray method is a method of spraying the cleaning composition on a metal mask base material
- the dipping method is a method of filling a cleaning tank with the cleaning composition and immersing the metal mask base material
- the ultrasonic method is a method of spraying the cleaning composition onto the metal mask base material. This can be performed by immersing the metal mask base material and applying ultrasonic waves.
- the step of contacting the cleaning composition with a metal mask may be performed at a temperature of 10 to 50 ° C. for 5 to 30 minutes using a dipping method. It is not limited to this.
- the second step is additionally performed using distilled water and applying ultrasonic waves at a temperature of 10 to 50 ° C for 5 to 30 minutes to create a metal mask. can be cleaned.
- a method of cleaning a metal mask includes 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; 0.01 to 0.1% by weight of corrosion inhibitor; and the step of contacting the metal mask with a cleaning composition containing a residual amount of water.
- a cleaning composition containing a residual amount of water.
- a composition for cleaning a metal mask is prepared according to the composition in the table, and then the metal mask is cleaned. i) the corrosion of the ultrasonic bath (material SUS 304, 316) cleaning equipment, ii) the corrosion (etching) of the metal mask, iii) metal mask corrosion (pit corrosion), and iv) apparent cleanability were evaluated.
- Metal mask corrosion (etchability) evaluation is to evaluate whether the metal mask base material itself is etched.
- a fine metal mask (FMM) made of laser-processed Invar was dipped into each cleaning composition, heated to 50° C. with an ultrasonic device, and cleaned for 10 minutes. The etching rate was observed using SEM (cross-section) and evaluated as follows.
- Metal mask pit corrosion evaluation is to evaluate whether pits, that is, small holes, are formed in the metal mask base material.
- a fine metal mask (FMM) made of laser-processed Invar was dipped into each cleaning composition, heated to 50° C. with an ultrasonic device, and cleaned for 10 minutes. The etching rate was observed using SEM (cross-section) and evaluated as follows.
- a cleaning composition was prepared according to the composition in Table 5 below, and then a cleaning test was performed.
- #1-1 to #1-8 are phosphoric acid-based metal chelating agents such as DTPMPA (Diethylenetriamine penta(methylene phosphonic acid)), ATMP (Aminotri(methylene phosphonic acid)), and HEDP (1-hydroxyethylidene-1,1-diphosphonic acid).
- HMDTMPA Hydromethyldiamine tetra(methylene phosphonic acid)
- PBTCA 2-phosphonobutane-1,2,4-tricarboxylic acid
- EDTMP Ethylenediamine tetra(methylene phosphonic acid)
- #2- #1 to #2-6 are cases where strong acids (phosphoric acid, hydrochloric acid) commonly used in the cleaning composition are included
- #2-7 are cases where EDTA (Ethylenediaminetetraacetic acid), a different type of chelating agent, is used.
- BTA Benzotriazole
- TEA Triethanolamine
- compositions #1-1 to #1-8 containing a phosphoric acid-based metal chelating agent showed better effects in terms of cleaning and corrosiveness.
- strong acids such as phosphoric acid or hydrochloric acid were used, severe corrosion occurred in metal masks and cleaning equipment even if a relatively small amount (10% by weight) was included.
- Figure 1 is a photograph of ultrasonic cleaning equipment after cleaning according to #2-4 above. Through Figure 1, it can be confirmed that corrosion of the ultrasonic bath occurred after cleaning.
- Figures 2a to 2e are photographs of a metal mask before and after cleaning to confirm its apparent cleanability.
- Figure 2a is a photo of a metal mask after laser processing and before cleaning.
- Figure 2b shows the apparent cleanability of LV1 (good external gloss and good cleaning power) according to Example 5, which will be described later, and
- Figure 2c corresponds to #1-7 of Table 5, and shows LV2 (slightly dark appearance, some This indicates the apparent cleanability of the level of debris present.
- Figure 2d corresponds to #1-8 of Table 5, LV3 (dark appearance, presence of many debris),
- Figure 2e corresponds to #2-7 of Table 5, LV4 (no change in appearance, no cleaning effect) It indicates the degree.
- the cleaning composition containing a phosphonic acid-based metal chelating agent apparently exhibits better cleaning properties.
- a cleaning composition was prepared by adjusting the content of phosphoric acid metal chelate, and then a cleaning test was performed.
- Figure 3 is an SEM photograph before and after cleaning the metal mask using the composition according to Comparative Example 1.
- Figure 3a is a photograph of a metal mask before cleaning after laser processing.
- Figure 3b is a photograph of a metal mask cleaned using the composition according to Example 1.
- Figure 4 is an SEM photograph after cleaning the metal mask using the composition according to Comparative Example 1 and Example 2.
- Figure 4a is a photograph of a metal mask cleaned using the composition according to Comparative Example 1
- Figure 4b is a photograph of a metal mask cleaned using the composition according to Example 2. Looking at Figure 4a, it can be seen that pit corrosion appears when cleaning is performed using the composition according to Comparative Example 1.
- a cleaning composition was prepared by including 0.01% by weight of BTA, a corrosion inhibitor, and adjusting the content of phosphoric acid metal chelate, and then a cleaning test was performed.
- Comparative Example 3 As in Experimental Example 1, it was confirmed that the apparent cleanability of Comparative Example 3 containing less than 70% by weight of the phosphonic acid metal chelating agent was poor, and Comparative Example 4 containing more than 90% by weight of the phosphonic acid metal chelating agent. And in the case of Comparative Example 5, it was confirmed that the apparent cleanability was not good.
- Figure 5 is an SEM photograph before and after cleaning the metal mask using the composition according to Example 5.
- Figure 5a is a photograph of a metal mask before cleaning after laser processing
- Figure 5b is a photograph of a metal mask cleaned using the composition according to Example 5.
- Figure 5C is a photograph of a metal mask before cleaning after laser processing
- Figure 5D is a photograph of a metal mask cleaned using the composition according to Example 5.
- the observed values confirm that the degree of corrosion of the metal mask itself is more severe.
- Figure 6 is an SEM photograph taken after cleaning using the cleaning compositions of Comparative Examples 4 and 5.
- Figure 6a is a picture taken of Comparative Example 4
- Figure 6b is a picture taken of Comparative Example 5 after cleaning.
- Figure 6 it can be seen that when more than 90% by weight of ATMP is included in the cleaning composition, there is a cleaning defect in the fine area. This means that as the viscosity increases, there is a limit to penetrating the fine area, and the cleaning power actually decreases. It is judged.
- a cleaning composition was prepared by generally containing 80% by weight of phosphoric acid metal chelate and adjusting the content of BTA, a corrosion inhibitor, and then a cleaning test was performed.
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Abstract
Description
실시예들은 메탈 마스크 세정용 조성물 및 이를 이용한 세정 방법에 관한 것이다.Examples relate to a composition for cleaning a metal mask and a cleaning method using the same.
유기발광소자(OLED, Organic Light Emitting Diodes)는 전기 에너지를 받아 빛을 내는 유기 화합물을 필름 형태로 적층한 전기 소자로서, 차세대 조명 및 디스플레이 소재 등으로 활용하기에 다양한 장점을 가지고 있다. OLED 디스플레이는 TFT(Thin Film Transistor)소자, 유기재료, 봉지층, 커버 윈도우 등 여러 층으로 구성되어 있으며, 이러한 다층 구조는 마스크(Mask)를 이용한 증착 방법으로 형성될 수 있다. OLED 디스플레이 제조 시 증착공정에서 활용하는 마스크에는 오픈 마스크(OM, Open Mask)와 파인 메탈 마스크(FMM, Fine Metal Mask)가 있으며, 일반적으로 금속 소재를 활용한다. 오픈 마스크는 디스플레이 제조 과정에서 OLED 기판에 유기막을 증착하여 발광층을 형성하기 위한 공정에서 사용하며, 파인 메탈 마스크는 초미세 홀(Hole)을 갖는 얇은 금속판으로 적색(Red), 녹색(Green), 청색(Blue)의 유기발광물질이 홀을 통과하여 기판 위의 원하는 위치에 각각 증착되도록 유도하는 역할을 한다. 이러한 마스크를 통해 진행되는 증착의 정확도는 생산 수율에 직결되므로, 마스크의 정확한 가공이 중요하다.Organic light emitting diodes (OLED) are electrical devices made by stacking organic compounds in the form of a film that emit light by receiving electrical energy, and have various advantages for use as next-generation lighting and display materials. An OLED display is composed of several layers, including a TFT (Thin Film Transistor) element, organic materials, an encapsulation layer, and a cover window, and this multilayer structure can be formed by a deposition method using a mask. Masks used in the deposition process when manufacturing OLED displays include open masks (OM) and fine metal masks (FMM), and metal materials are generally used. The open mask is used in the process of depositing an organic film on an OLED substrate to form a light emitting layer during the display manufacturing process, and the fine metal mask is a thin metal plate with ultra-fine holes in red, green, and blue. It serves to guide the (Blue) organic luminescent material to pass through the hole and be deposited at the desired location on the substrate. Since the accuracy of deposition performed through such a mask is directly related to production yield, accurate processing of the mask is important.
메탈 마스크를 제조하는 대표적인 방법으로는 금속판을 얇게 압연한 뒤 불필요한 부분을 깎아내는 에칭(Etching) 방식이나, 전기도금의 원리를 이용해 패턴화된 기판에 도금하는 전주 도금(Electro-forming) 방식이 있다. 그러나, 선택적 에칭 등 기타 한계가 존재하여, 초고화질(UHD)급 800ppi에 이어 가상현실(VR), 증강현실(AR) 구현에 적합한 고해상도 1000ppi 구현을 위해서 레이저를 이용하여 구멍을 뚫어 패턴을 제조하는 레이저 패터닝 방식이 부각되고 있다.Representative methods of manufacturing metal masks include the etching method, which involves rolling a metal plate thinly and then cutting off unnecessary parts, or the electro-forming method, which involves plating a patterned substrate using the principles of electroplating. . However, there are other limitations such as selective etching, so in order to achieve high resolution 1000 ppi suitable for implementing virtual reality (VR) and augmented reality (AR) in addition to ultra-high definition (UHD) level 800 ppi, patterns are manufactured by drilling holes using a laser. Laser patterning methods are gaining prominence.
레이저를 이용한 메탈 마스크의 가공 공정 시, 레이저의 고온 반응에 의해 수많은 금속 불순물 및 금속 산화물이 발생하게 된다. 이러한 금속 산화물은 메탈 마스크 가공면에 끼어서 불량 화소로 존재할 수도 있으며, 가공 픽셀 주위를 오염시켜 균일한 가공 면적 확보에 어려움을 줄 수 있다.When processing a metal mask using a laser, numerous metal impurities and metal oxides are generated due to the high temperature reaction of the laser. These metal oxides may become stuck on the processing surface of the metal mask and exist as defective pixels, and may contaminate the area around the processing pixels, making it difficult to secure a uniform processing area.
이러한 금속 불순물 및 금속 산화물 제거는, 종래에 RCA-2 세정 공정 및 기타 무기산이 포함된 세정 용액을 이용한 세정 공정으로 행하여져 왔으나, 상기 공정은 사용되는 염산 및 기타 무기산에 의해 메탈 마스크 자재 자체에 강한 부식 영향을 줄 수 있으며, 특히 세정 공정에 이용되는 세정 장비 또한 부식시킬 수 있어 문제가 된다. 또한, 무기산 계열은 대부분 환경규제물질에 해당하므로 적용에 많은 한계가 있다. 이에, 상술한 문제점을 해결할 수 있는 신규한 세정용 조성물 및 세정 방법이 요구된다.Removal of these metal impurities and metal oxides has been conventionally performed using the RCA-2 cleaning process and other cleaning processes using cleaning solutions containing inorganic acids. However, this process causes strong corrosion of the metal mask material itself due to the hydrochloric acid and other inorganic acids used. It can have an impact, and in particular, it is a problem because it can also corrode the cleaning equipment used in the cleaning process. In addition, since most inorganic acids are environmentally regulated substances, there are many limitations in their application. Accordingly, a new cleaning composition and cleaning method that can solve the above-mentioned problems are required.
상술한 기술적 과제를 달성하기 위하여 실시예들은, 레이저에 의해 가공되는 메탈 마스크의 모재(base material)는 손상시키지 않으면서 선택적으로 세정할 수 있는 세정용 조성물로서, 환경규제물질을 포함하지 않는 세정용 조성물 및 세정 방법을 제공하는 것을 목적으로 한다.In order to achieve the above-described technical problem, embodiments provide a cleaning composition that can selectively clean the base material of a metal mask processed by a laser without damaging it, and does not contain environmentally regulated substances. The purpose is to provide a composition and cleaning method.
상기 기술적 과제를 달성하기 위하여 실시예들은, 조성물 총 중량을 기준으로 70 내지 90 중량%의 포스폰산 금속 킬레이트제; 및 잔량의 물;을 포함하는 메탈 마스크 세정용 조성물을 제공한다.In order to achieve the above technical problem, examples include 70 to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; and a remaining amount of water. It provides a composition for cleaning a metal mask comprising:
또한, 일 구현예로서, 조성물 총 중량을 기준으로 0.001 내지 1 중량%의 부식억제제를 추가적으로 포함하는 메탈 마스크 세정용 조성물을 제공한다.In addition, as one embodiment, a composition for cleaning a metal mask is provided, which additionally includes 0.001 to 1% by weight of a corrosion inhibitor based on the total weight of the composition.
또다른 구현예로서, 조성물 총 중량을 기준으로 0.01 내지 0.1 중량%의 부식억제제를 추가적으로 포함하는 메탈 마스크 세정용 조성물을 제공한다.As another embodiment, a composition for cleaning a metal mask is provided, which additionally includes 0.01 to 0.1% by weight of a corrosion inhibitor based on the total weight of the composition.
메탈 마스크 세정용 조성물에 있어서, 상기 포스폰산 금속 킬레이트제는 DTPMPA(Diethylenetriamine penta(Methylene phosphonic acid)), ATMP(Aminotri(methylene phosphonic acid)), HEDP(1-Hydroxyethylidene-1,1-diphosphonic acid), HMDTMPA(Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA(2-Phosphonobutane-1,2,4-tricarboxylic acid), EDTMP(Ethylenediamine tetra(methylene phosphonic acid))로 이루어진 군에서 선택된 적어도 하나를 포함하는 것을 특징으로 한다.In the metal mask cleaning composition, the phosphonic acid metal chelating agent includes DTPMPA (Diethylenetriamine penta(Methylene phosphonic acid)), ATMP (Aminotri(methylene phosphonic acid)), HEDP (1-Hydroxyethylidene-1,1-diphosphonic acid), Characterized by comprising at least one selected from the group consisting of HMDTMPA (Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA (2-Phosphonobutane-1,2,4-tricarboxylic acid), and EDTMP (Ethylenediamine tetra(methylene phosphonic acid)) do.
또한, 메탈 마스크 세정용 조성물에 있어서, 상기 부식억제제는 벤조트리아졸(Benzotriazole), 1-아미노-벤조트리아졸(1-Amino-benzotriazole), 1-하이드록시-벤조트리아졸(1-Hydroxy-benzotriazole), 5-메틸-1H-벤조트리아졸(5-Methyl-1H-benzotriazole) 및 벤조트리아졸-5-카르복실산(Benzotriazole-5-carboxylic acid)으로 이루어진 군에서 선택된 적어도 하나를 포함하는 것을 특징으로 한다.In addition, in the metal mask cleaning composition, the corrosion inhibitor is benzotriazole, 1-Amino-benzotriazole, and 1-Hydroxy-benzotriazole. ), 5-Methyl-1H-benzotriazole, and benzotriazole-5-carboxylic acid. Do it as
메탈 마스크 세정용 조성물에 있어서, 상기 세정은 상기 메탈 마스크에 레이저 조사 시 형성된 산화물을 제거하는 것일 수 있다. In a composition for cleaning a metal mask, the cleaning may be performed to remove oxide formed when laser irradiation is applied to the metal mask.
메탈 마스크 세정용 조성물에 있어서, 상기 산화물은 철(Fe), 코발트(Co), 크롬(Cr), 망간(Mn), 니켈(Ni), 티타늄(Ti), 몰리브덴(Mo), SUS(Steel Use Stainless) 합금, 인코넬(Inconel) 합금, 코바(Kovar) 합금, 및 인바(Invar) 합금으로 이루어진 군에서 선택된 적어도 하나의 금속의 산화물일 수 있다.In the metal mask cleaning composition, the oxides include iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), and SUS (Steel Use). It may be an oxide of at least one metal selected from the group consisting of Stainless alloy, Inconel alloy, Kovar alloy, and Invar alloy.
메탈 마스크 세정용 조성물에 있어서, 상기 메탈 마스크의 모재(base material)는 철(Fe), 코발트(Co), 크롬(Cr), 망간(Mn), 니켈(Ni), 티타늄(Ti), 몰리브덴(Mo), SUS(Steel Use Stainless) 합금, 인코넬(Inconel) 합금, 코바(Kovar) 합금, 및 인바(Invar) 합금 중에서 선택된 적어도 하나의 금속을 포함한 것일 수 있다.In the metal mask cleaning composition, the base material of the metal mask is iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum ( It may contain at least one metal selected from Mo), SUS (Steel Use Stainless) alloy, Inconel alloy, Kovar alloy, and Invar alloy.
또한, 상술한 세정용 조성물을 메탈 마스크와 접촉시키는 단계를 포함하는, 메탈 마스크의 세정 방법을 제공한다.Additionally, a method for cleaning a metal mask is provided, including the step of bringing the above-described cleaning composition into contact with the metal mask.
일 구현예에 따른 세정 방법은, 스프레이법, 딥핑법, 및 초음파법 중에서 적어도 하나의 방법을 이용하여 상기 세정용 조성물을 상기 메탈 마스크와 접촉시킴으로써 수행되는 것일 수 있다.The cleaning method according to one embodiment may be performed by bringing the cleaning composition into contact with the metal mask using at least one of a spray method, a dipping method, and an ultrasonic method.
일 구현예에 따른 세정 방법은, 상기 딥핑법을 이용하여 10 내지 50 ℃의 온도에서 5분 내지 30분의 시간 동안 수행되는 제1단계를 포함하는 것일 수 있다.The cleaning method according to one embodiment may include a first step performed for 5 to 30 minutes at a temperature of 10 to 50° C. using the dipping method.
일 구현예에 따른 세정 방법은, 상기 제1단계 이후, 증류수를 사용하여 10 내지 50 ℃의 온도에서 5분 내지 30분의 시간 동안 초음파를 가하여 수행되는 제2단계를 포함하는 것일 수 있다.The cleaning method according to one embodiment may include, after the first step, a second step performed by applying ultrasonic waves using distilled water at a temperature of 10 to 50° C. for 5 to 30 minutes.
실시예의 메탈 마스크 세정용 조성물 및 세정 방법에 따르면, 레이저에 의해 가공되는 메탈 마스크의 모재는 손상시키지 않으면서 선택적으로 세정할 수 있는 세정용 조성물 및 세정 방법을 제공할 수 있다. 특히, 본 발명의 세정용 조성물 및 이를 이용한 세정 방법은 레이저에 의해 가공되는 파인 메탈 마스크의 모재를 손상시키지 않으면서 더욱 높은 세정력으로 금속 산화물을 제거할 수 있다.According to the metal mask cleaning composition and cleaning method of the embodiment, it is possible to provide a cleaning composition and cleaning method that can selectively clean the base material of a metal mask processed by a laser without damaging it. In particular, the cleaning composition of the present invention and the cleaning method using the same can remove metal oxides with higher cleaning power without damaging the base material of the fine metal mask processed by a laser.
또한, 실시예는 환경규제물질을 포함하지 않는 세정용 조성물 및 세정 방법을 제공할 수 있다.Additionally, the examples can provide a cleaning composition and cleaning method that do not contain environmentally regulated substances.
도 1은 종래의 세정용 조성물을 이용한 세정 후, 초음파 bath를 촬영하여 부식성을 확인하기 위한 사진이다.Figure 1 is a photograph of an ultrasonic bath to check corrosiveness after cleaning using a conventional cleaning composition.
도 2a 내지 도 2e는 일 실험예에 따른 세정용 조성물을 이용한 세정 후 메탈 마스크를 촬영하여 외관상 세정성을 확인하기 위한 사진이다.Figures 2a to 2e are photographs taken to confirm the apparent cleanability of a metal mask after cleaning using a cleaning composition according to an experimental example.
도 3a 및 도 3b는 각각 비교예 1의 조성물을 이용한 메탈 마스크의 세정 전후 SEM 사진이다(세정 전: 도 3a, 세정 후: 도 3b).Figures 3a and 3b are SEM images before and after cleaning the metal mask using the composition of Comparative Example 1, respectively (before cleaning: Figure 3a, after cleaning: Figure 3b).
도 4a는 비교예 1의 조성물을 이용한 메탈 마스크의 세정 후 SEM 사진이다. 도 4b는 실시예 2의 조성물을 이용한 메탈 마스크의 세정 후 SEM 사진이다.Figure 4a is an SEM photograph after cleaning the metal mask using the composition of Comparative Example 1. Figure 4b is an SEM photograph after cleaning the metal mask using the composition of Example 2.
도 5a 및 도 5b는 각각실시예 5에 따른 조성물을 이용한 메탈 마스크의 세정 전후 SEM 사진이다.Figures 5a and 5b are SEM images before and after cleaning the metal mask using the composition according to Example 5, respectively.
또한, 도 5c 및 도 5d는 각각 실시예 5에 따른 조성물을 이용한 메탈 마스크의 세정 전후 SEM 사진이다.Additionally, Figures 5c and 5d are SEM images before and after cleaning the metal mask using the composition according to Example 5, respectively.
도 6a는 비교예 4의 조성물을 이용한 메탈 마스크의 세정 후 SEM 사진이다. 도 6b는 비교예 5의 조성물을 이용한 메탈 마스크의 세정 후 SEM 사진이다.Figure 6a is an SEM photograph after cleaning the metal mask using the composition of Comparative Example 4. Figure 6b is an SEM photograph after cleaning the metal mask using the composition of Comparative Example 5.
이하, 도면을 참조하여 본 실시예들이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 실시예들을 설명함에 있어서, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 실시예들의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.Hereinafter, with reference to the drawings, the present embodiments will be described in detail so that those skilled in the art can easily perform them. In describing the embodiments, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the embodiments, the detailed description will be omitted.
또한 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서 상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다. 본 출원에서 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함할 수 있다.In addition, in the present application, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, but are not intended to indicate the presence of one or more other It should be understood that this does not exclude in advance the presence or addition of features, numbers, steps, operations, components, parts, or combinations thereof. In this application, singular expressions may include plural expressions, unless the context clearly dictates otherwise.
이하, 실시예들에 따른 메탈 마스크 세정용 조성물 및 이를 이용한 세정 방법에 대하여 상세히 설명한다.Hereinafter, a composition for cleaning a metal mask according to embodiments and a cleaning method using the same will be described in detail.
일 실시예에 따른 상기 메탈 마스크 세정용 조성물은, 조성물 총 중량을 기준으로 70 중량% 내지 90 중량% 포함되는 포스폰산 금속 킬레이트제; 및 잔량의 물;을 포함한다.The metal mask cleaning composition according to one embodiment includes 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; and the remaining amount of water.
상기 포스폰산 금속 킬레이트제는 비교적 고함량, 즉 세정용 조성물 총 중량을 기준으로 70 내지 90 중량% 포함됨으로써, 향상된 메탈 마스크 세정 능력을 나타낼 수 있다. 종래의 세정용 조성물에 포함되는 황산, 인산, 염산 등과 같은 강산은 세정 공정 진행 중 SOx, NOx와 같은 유해 물질을 발생시켜 문제가 되며, 고함량이 포함되면 강한 산의 성질이 메탈 마스크의 부식에 악영향을 주어 문제가 되나, 실시예의 메탈 마스크 세정용 조성물은 메탈 마스크의 모재에 손상을 주지 않으면서 우수한 세정 능력을 나타낼 수 있으며, 환경규제물질에 해당하지 않는다. 또한, 실시예의 세정용 조성물은 SUS(Stainless steel) 계열의 초음파 배스 재질에 대한 부식성이 없다는 장점을 갖는다.The phosphonic acid metal chelating agent can exhibit improved metal mask cleaning ability by being included in a relatively high content, that is, 70 to 90% by weight based on the total weight of the cleaning composition. Strong acids such as sulfuric acid, phosphoric acid, and hydrochloric acid included in conventional cleaning compositions are problematic because they generate harmful substances such as SO Although it is a problem because it has a negative effect on corrosion, the metal mask cleaning composition of the example can exhibit excellent cleaning ability without damaging the base material of the metal mask, and is not an environmentally regulated substance. Additionally, the cleaning composition of the example has the advantage of being non-corrosive to stainless steel (SUS)-based ultrasonic bath materials.
특히, 실시예의 메탈 마스크 세정용 조성물은, 포스폰산 금속 킬레이트제를 포함하여 pH 1.0 이하의 강한 산성을 나타내면서도 매우 효과적인 세정력을 나타낼 수 있으며, 특히 Invar 모재의 메탈 마스크에 손상을 주지 않으면서 높은 세정력을 나타낸다.In particular, the metal mask cleaning composition of the example contains a phosphonic acid metal chelating agent and can exhibit very effective cleaning power while exhibiting strong acidity of pH 1.0 or less. In particular, it has high cleaning power without damaging the metal mask of the Invar base material. represents.
일 구현예에 따른 상기 포스폰산 금속 킬레이트제는, DTPMPA(Diethylenetriamine penta(methylene phosphonic acid)), ATMP(Aminotri(methylene phosphonic acid)), HEDP(1-hydroxyethylidene-1,1-diphosphonic acid), HMDTMPA(Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA(2-phosphonobutane-1,2,4-tricarboxylic acid), EDTMP(Ethylenediamine tetra(methylene phosphonic acid))로 이루어진 군에서 선택되는 하나 이상을 포함하는 것을 특징으로 한다.The phosphonic acid metal chelating agent according to one embodiment includes Diethylenetriamine penta(methylene phosphonic acid) (DTPMPA), Aminotri(methylene phosphonic acid) (ATMP), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), and HMDTMPA ( It is characterized in that it contains one or more selected from the group consisting of Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA (2-phosphonobutane-1,2,4-tricarboxylic acid), and EDTMP (Ethylenediamine tetra(methylene phosphonic acid)) .
상술한 바와 같이 조성물 총 중량을 기준으로 70 중량% 내지 90 중량% 포함되는 포스폰산 금속 킬레이트제; 및 잔량의 물;을 포함하는 일 구현예에 따른 상기 메탈 마스크 세정용 조성물에서, 상기 잔량의 물은, 세정용 조성물을 100 중량%로 하였을 때 상기 금속 킬레이트제를 제외한 나머지 중량%를 의미한다.As described above, a phosphonic acid metal chelating agent contained in an amount of 70% to 90% by weight based on the total weight of the composition; and a remaining amount of water; in the metal mask cleaning composition according to one embodiment including a remaining amount of water, the remaining amount of water refers to the remaining weight% excluding the metal chelating agent when the cleaning composition is 100% by weight.
일 구현예에 따른 상기 메탈 마스크 세정용 조성물은, 조성물 총 중량을 기준으로 0.001 내지 1 중량%의 부식 억제제를 추가적으로 포함할 수 있으며, 더욱 바람직하게는 조성물 총 중량을 기준으로 0.01 내지 0.1 중량% 포함할 수 있다. The metal mask cleaning composition according to one embodiment may additionally include 0.001 to 1% by weight of a corrosion inhibitor based on the total weight of the composition, and more preferably 0.01 to 0.1% by weight based on the total weight of the composition. can do.
즉, 조성물 총 중량을 기준으로 70 중량% 내지 90 중량% 포함되는 포스폰산 금속 킬레이트제; 0.001 내지 1 중량%의 부식 억제제; 및 잔량의 물;을 포함할 수 있다. 더욱 바람직하게는, 조성물 총 중량을 기준으로 70 중량% 내지 90 중량% 포함되는 포스폰산 금속 킬레이트제; 0.01 내지 0.1 중량%의 부식 억제제; 및 잔량의 물;을 포함할 수 있다.That is, a phosphonic acid metal chelating agent contained in an amount of 70% to 90% by weight based on the total weight of the composition; 0.001 to 1% by weight of corrosion inhibitor; and a remaining amount of water. More preferably, the phosphonic acid metal chelating agent is included in an amount of 70% to 90% by weight based on the total weight of the composition; 0.01 to 0.1% by weight of corrosion inhibitor; and a remaining amount of water.
상기 잔량의 물은, 세정용 조성물 100 중량%를 기준으로 할 때, 포스폰산 금속 킬레이트제 및 부식 억제제의 함량을 제외한 나머지 중량%를 의미한다.The remaining amount of water refers to the remaining weight% excluding the content of the phosphonic acid metal chelating agent and corrosion inhibitor, based on 100% by weight of the cleaning composition.
일 구현예에 따른 메탈 마스크 세정용 조성물은, 상기 함량 범위의 부식 억제제를 포함함에 따라 메탈 마스크의 모재에 대한 부식성이 거의 나타나지 않는 장점을 갖는다.The composition for cleaning a metal mask according to one embodiment has the advantage of showing little corrosiveness to the base material of the metal mask as it contains a corrosion inhibitor in the above content range.
상기 부식 억제제는 아졸(Azol)계, 에탄올아민(Ethanolamine)계 부식 억제제 중 적어도 하나를 포함하는 것을 특징으로 하나, 이에 제한되지 않는다.The corrosion inhibitor is characterized in that it includes at least one of an azole-based corrosion inhibitor and an ethanolamine-based corrosion inhibitor, but is not limited thereto.
상기 아졸계 부식 억제제는 트리아졸화합물, 벤조트리아졸화합물, 이미다졸화합물, 테트라졸화합물, 티아졸화합물, 옥사졸화합물 및 피라졸화합물로 구성된 군에서 선택된 적어도 하나를 포함할 수 있다.The azole-based corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, benzotriazole compounds, imidazole compounds, tetrazole compounds, thiazole compounds, oxazole compounds, and pyrazole compounds.
상기 에탄올아민계 부식 억제제는 모노에탄올아민, 디에탄올아민, 트리에탄올아민으로 구성된 군에서 선택된 적어도 하나를 포함할 수 있다.The ethanolamine-based corrosion inhibitor may include at least one selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine.
상기 부식억제제는 벤조트리아졸화합물을 포함하는 것이 더욱 바람직하다. 구체적으로, 벤조트리아졸(Benzotriazole), 1-아미노-벤조트리아졸(1-Amino-benzotriazole), 1-하이드록시-벤조트리아졸(1-Hydroxy-benzotriazole), 5-메틸-1H-벤조트리아졸(5-Methyl-1H-benzotriazole) 및 벤조트리아졸-5-카르복실산(Benzotriazole-5-carboxylic acid)으로 이루어진 군에서 선택된 하나 이상을 포함하는 것을 특징으로 한다.It is more preferable that the corrosion inhibitor includes a benzotriazole compound. Specifically, benzotriazole, 1-Amino-benzotriazole, 1-Hydroxy-benzotriazole, 5-methyl-1H-benzotriazole It is characterized in that it contains at least one selected from the group consisting of (5-Methyl-1H-benzotriazole) and benzotriazole-5-carboxylic acid.
특히, 실시예의 메탈 마스크 세정용 조성물은, 상기 벤조트리아졸화합물을, 조성물 총 중량을 기준으로 0.01 내지 0.1 중량% 포함하는 것이 더욱 바람직하며, 이러한 조성의 메탈 마스크 세정용 조성물은 특히 Invar 소재의 메탈 마스크에 자체에 에칭이나 Pit 부식성을 나타내지 않으면서 세정 장비에도 부식성을 나타내지 않는다.In particular, the metal mask cleaning composition of the example preferably contains 0.01 to 0.1% by weight of the benzotriazole compound based on the total weight of the composition, and the metal mask cleaning composition of this composition is particularly suitable for use on metals made of Invar. It does not cause etching or pit corrosion to the mask itself and does not show corrosion to cleaning equipment.
일 예로서, 상기 세정 장비는 초음파 bath의 재질로서 일반적으로 활용되는 SUS 304이나 SUS 316일 수 있으나, 이에 제한되지 않는다.As an example, the cleaning equipment may be SUS 304 or SUS 316, which are commonly used as materials for ultrasonic baths, but is not limited thereto.
실시예의 일 구현예에 따른 메탈 마스크 세정용 조성물은, 메탈 마스크가공 시 메탈 마스크에 레이저를 조사할 때 형성된 산화물을 제거하는 것을 목적으로 한다. 즉, 메탈 마스크에 레이저 조사 시 레이저의 고온 반응에 의해 메탈 마스크의 모재가 산화되어 금속 산화물이 발생하게 되며, 실시예의 세정용 조성물은 이러한 산화물을 제거하는 것이다. 이에, 상기 산화물은 철(Fe), 코발트(Co), 크롬(Cr), 망간(Mn), 니켈(Ni), 티타늄(Ti), 몰리브덴(Mo), SUS(Steel Use Stainless) 합금, 인코넬(Inconel) 합금, 코바(Kovar) 합금, 및 인바(Invar) 합금 중에서 선택된 적어도 하나의 금속의 산화물일 수 있다.The purpose of a composition for cleaning a metal mask according to an embodiment of the present invention is to remove oxide formed when a laser is irradiated to a metal mask during metal mask processing. That is, when a laser is irradiated to a metal mask, the base material of the metal mask is oxidized due to a high-temperature reaction of the laser to generate metal oxide, and the cleaning composition of the example removes such oxide. Accordingly, the oxides include iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), SUS (Steel Use Stainless) alloy, Inconel ( It may be an oxide of at least one metal selected from Inconel alloy, Kovar alloy, and Invar alloy.
또한, 상기 메탈 마스크의 모재(base material)는 철(Fe), 코발트(Co), 크롬(Cr), 망간(Mn), 니켈(Ni), 티타늄(Ti), 몰리브덴(Mo), SUS(Steel Use Stainless) 합금, 인코넬(Inconel) 합금, 코바(Kovar) 합금, 및 인바(Invar) 합금 중에서 선택된 적어도 하나의 금속을 포함한 것일 수 있다.In addition, the base material of the metal mask is iron (Fe), cobalt (Co), chromium (Cr), manganese (Mn), nickel (Ni), titanium (Ti), molybdenum (Mo), and SUS (Steel). It may contain at least one metal selected from Use Stainless alloy, Inconel alloy, Kovar alloy, and Invar alloy.
예로서, 상기 메탈 마스크의 모재는 인바(Invar) 합금일 수 있다. Invar 합금은 주성분이 철(Fe)과 니켈(Ni)이며, SUS 합금에 비해 열팽창이 적고, 고온에서도 장력이 크게 감소하지 않는 장점이 있어, 메탈 마스크의 모재로 사용하기에 더욱 바람직하다. 또한, 모재가 Invar 합금인 메탈 마스크에 실시예의 세정용 조성물을 사용하였을 때 부식성이 적고 세정성이 높아 더욱 바람직하다.For example, the base material of the metal mask may be Invar alloy. Invar alloy's main ingredients are iron (Fe) and nickel (Ni), and it has the advantage of having less thermal expansion than SUS alloy and not significantly reducing tension even at high temperatures, making it more desirable for use as a base material for metal masks. In addition, when the cleaning composition of the example is used on a metal mask whose base material is an Invar alloy, it is more preferable because it is less corrosive and has higher cleaning properties.
한편, 일 구현예에 따른 메탈 마스크의 세정 방법을 제공할 수 있다. 일 예로서 본 발명의 세정 방법은, 조성물 총 중량을 기준으로 70 중량% 내지 90 중량% 포함되는 포스폰산 금속 킬레이트제; 및 잔량의 물;을 포함하는 세정용 조성물을 메탈 마스크와 접촉시키는 단계를 포함한다.Meanwhile, a method for cleaning a metal mask according to an embodiment can be provided. As an example, the cleaning method of the present invention includes 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; and the step of contacting the metal mask with a cleaning composition containing a residual amount of water.
일 구현예에 따른 메탈 마스크 세정 방법으로서, 스프레이법, 딥핑법, 및 초음파법 중에서 적어도 하나의 방법을 이용하여 상기 세정용 조성물을 상기 메탈 마스크와 접촉시킴으로써 수행되는 것일 수 있으나, 상술한 방법에 한정되는 것은 아니다. 상기 스프레이법은 메탈 마스크 모재 상에 상기 세정용 조성물을 분무하는 방법이며, 상기 딥핑법은 세정조에 상기 세정용 조성물을 채우고 상기 메탈 마스크 모재를 침지시키는 방법이고, 상기 초음파법은 상기 세정용 조성물에 상기 메탈 마스크 모재를 침지시키고 초음파를 가하는 방법으로 수행될 수 있다.A metal mask cleaning method according to one embodiment may be performed by bringing the cleaning composition into contact with the metal mask using at least one of a spray method, a dipping method, and an ultrasonic method, but is limited to the above-described method. It doesn't work. The spray method is a method of spraying the cleaning composition on a metal mask base material, the dipping method is a method of filling a cleaning tank with the cleaning composition and immersing the metal mask base material, and the ultrasonic method is a method of spraying the cleaning composition onto the metal mask base material. This can be performed by immersing the metal mask base material and applying ultrasonic waves.
일 구현예에 따른 메탈 마스크 세정 방법으로서, 상기 세정용 조성물을 메탈 마스크와 접촉시키는 단계는, 딥핑법을 이용하여 10 내지 50 ℃의 온도에서 5분 내지 30분의 시간 동안 수행되는 것일 수 있으나, 이에 제한되지 않는다.In a metal mask cleaning method according to one embodiment, the step of contacting the cleaning composition with a metal mask may be performed at a temperature of 10 to 50 ° C. for 5 to 30 minutes using a dipping method. It is not limited to this.
또한, 상기 딥핑법을 이용한 제1단계를 진행한 뒤, 증류수를 사용하여 10 내지 50 ℃의 온도에서 5분 내지 30분의 시간 동안 초음파를 가하여 수행되는 제2단계를 추가적으로 진행하는 방법으로 메탈 마스크를 세정할 수 있다.In addition, after performing the first step using the dipping method, the second step is additionally performed using distilled water and applying ultrasonic waves at a temperature of 10 to 50 ° C for 5 to 30 minutes to create a metal mask. can be cleaned.
일 구현예에 따른 메탈 마스크의 세정 방법은, 조성물 총 중량을 기준으로 70 중량% 내지 90 중량%의 포스폰산 금속 킬레이트제; 0.01 내지 0.1 중량%의 부식억제제; 및 잔량의 물;을 포함하는 세정용 조성물을 메탈 마스크와 접촉시키는 단계를 포함할 수 있으며, 전술한 세정 방법을 모두 이용할 수 있음은 물론이다.A method of cleaning a metal mask according to one embodiment includes 70% to 90% by weight of a phosphonic acid metal chelating agent based on the total weight of the composition; 0.01 to 0.1% by weight of corrosion inhibitor; and the step of contacting the metal mask with a cleaning composition containing a residual amount of water. Of course, all of the above-described cleaning methods can be used.
이하, 실시예를 통해 보다 상세히 설명한다. 그러나 하기의 실시예는 본 발명을 구체적으로 예시하기 위한 것일 뿐, 권리범위를 제한하는 것이 아니다. 즉, 실시예들의 단순한 변형 내지 변경은 본 실시예들이 속하는 분야의 통상의 기술자에 의하여 용이하게 실시될 수 있으며, 이러한 변형이나 변경은 모두 실시예들의 영역에 포함되는 것으로 볼 수 있다.Hereinafter, it will be described in more detail through examples. However, the following examples are only intended to specifically illustrate the present invention and do not limit the scope of the rights. That is, simple modifications or changes to the embodiments can be easily implemented by a person skilled in the art to which the present embodiments belong, and all such modifications or changes can be considered to be included in the scope of the embodiments.
<실시예><Example>
후술할 바와 같이 표의 조성대로 메탈 마스크 세정용 조성물을 제조한 뒤 메탈 마스크의 세정을 진행하고, i) 초음파 bath(재질 SUS 304, 316) 세정 장비의 부식성, ii) 메탈 마스크 부식성(에칭성), iii) 메탈 마스크 부식성(Pit 부식성), 및 iv) 외관상 세정성을 평가하였다.As will be described later, a composition for cleaning a metal mask is prepared according to the composition in the table, and then the metal mask is cleaned. i) the corrosion of the ultrasonic bath (material SUS 304, 316) cleaning equipment, ii) the corrosion (etching) of the metal mask, iii) metal mask corrosion (pit corrosion), and iv) apparent cleanability were evaluated.
1. 평가 방법1. Evaluation method
i) 초음파 bath(재질 SUS 304, 316) 세정 장비의 부식성 평가는, 초음파 세정 장비에 세정용 조성물로 인한 부식이 발생하는지 테스트하는 것이다. 각 세정용 조성물을 50 ℃로 고정한 후 SUS 304 및 316 스크랩을 딥핑(dipping)하여, 1시간 후 부식성을 관찰하여 하기와 같이 평가하였다.i) Evaluation of the corrosion of ultrasonic bath (material SUS 304, 316) cleaning equipment is to test whether corrosion occurs in the ultrasonic cleaning equipment due to the cleaning composition. After fixing each cleaning composition at 50°C, scrap SUS 304 and 316 were dipped, and after 1 hour, corrosiveness was observed and evaluated as follows.
ii) 메탈 마스크 부식성(에칭성) 평가는, 메탈 마스크 모재 자체가 에칭되는지 평가하는 것이다. 레이저 가공된 Invar 재질의 파인 메탈 마스크(FMM)를 각 세정용 조성물에 딥핑 후 초음파 장치를 50 ℃로 가열하여 10분간 세정하고, 에칭률을 SEM(단면)으로 관찰하여 하기와 같이 평가하였다.ii) Metal mask corrosion (etchability) evaluation is to evaluate whether the metal mask base material itself is etched. A fine metal mask (FMM) made of laser-processed Invar was dipped into each cleaning composition, heated to 50° C. with an ultrasonic device, and cleaned for 10 minutes. The etching rate was observed using SEM (cross-section) and evaluated as follows.
iii) 메탈 마스크 부식성(Pit 부식성) 평가는, 메탈 마스크 모재에 피트(Pit), 즉 작은 구멍이 형성되는지 평가하는 것이다. 레이저 가공된 Invar 재질의 파인 메탈 마스크(FMM)를 각 세정용 조성물에 딥핑 후 초음파 장치를 50 ℃로 가열하여 10분간 세정하고, 에칭률을 SEM(단면)으로 관찰하여 하기와 같이 평가하였다.iii) Metal mask pit corrosion evaluation is to evaluate whether pits, that is, small holes, are formed in the metal mask base material. A fine metal mask (FMM) made of laser-processed Invar was dipped into each cleaning composition, heated to 50° C. with an ultrasonic device, and cleaned for 10 minutes. The etching rate was observed using SEM (cross-section) and evaluated as follows.
iv) 외관상 세정성 평가는, 초음파 장치에 각 세정용 조성물 및 메탈 마스크를 투입한 후, 50 ℃에서 10분간 세정하고, 외관상 세정성을 관찰하여 하기와 같이 평가하였다.iv) The apparent cleanability was evaluated as follows by putting each cleaning composition and metal mask into an ultrasonic device, cleaning at 50°C for 10 minutes, and observing the apparent cleanability.
2. 포스포산계 금속 킬레이트제 포함 유무에 따른 세정 테스트2. Cleaning test with and without phosphoric acid-based metal chelating agent
하기 표 5의 조성에 따라 세정용 조성물을 제조한 뒤 세정 테스트를 진행하였다. #1-1 내지 #1-8은 포스포산계 금속 킬레이트제인 DTPMPA(Diethylenetriamine penta(methylene phosphonic acid)), ATMP(Aminotri(methylene phosphonic acid)), HEDP(1-hydroxyethylidene-1,1-diphosphonic acid), HMDTMPA(Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA(2-phosphonobutane-1,2,4-tricarboxylic acid), EDTMP(Ethylenediamine tetra(methylene phosphonic acid))를 순서대로 각각 포함하는 경우이고, #2-1 내지 #2-6은 세정 조성물에 일반적으로 사용되는 강산(인산, 염산)을 포함한 경우이며, #2-7은 다른 종류의 킬레이트제인 EDTA(Ethylenediaminetetraacetic acid)를 사용한 경우이다. 또한, 부식억제제로는 BTA(Benzotriazole), 혹은 TEA(Triethanolamine)를 사용하였다.A cleaning composition was prepared according to the composition in Table 5 below, and then a cleaning test was performed. #1-1 to #1-8 are phosphoric acid-based metal chelating agents such as DTPMPA (Diethylenetriamine penta(methylene phosphonic acid)), ATMP (Aminotri(methylene phosphonic acid)), and HEDP (1-hydroxyethylidene-1,1-diphosphonic acid). , HMDTMPA (Hexamethylenediamine tetra(methylene phosphonic acid)), PBTCA (2-phosphonobutane-1,2,4-tricarboxylic acid), and EDTMP (Ethylenediamine tetra(methylene phosphonic acid)) are included in that order, #2- #1 to #2-6 are cases where strong acids (phosphoric acid, hydrochloric acid) commonly used in the cleaning composition are included, and #2-7 are cases where EDTA (Ethylenediaminetetraacetic acid), a different type of chelating agent, is used. Additionally, BTA (Benzotriazole) or TEA (Triethanolamine) was used as a corrosion inhibitor.
(외관)(Exterior)
상기 결과를 통해, 포스포산계 금속 킬레이트제를 포함하는 #1-1 내지 #1-8의 조성물이 세정성 및 부식성 측면에서 더욱 우수한 효과를 나타냄을 확인하였다. 특히, 인산이나 염산과 같은 강산을 사용한 경우, 비교적 적은 함량(10 중량%)이 포함되더라도 메탈 마스크 및 세정 장비에 부식이 심하게 발생하였다. 도 1은 상기 #2-4에 따른 세정 후 초음파 세정 장비를 촬영한 것이다. 도 1을 통해 세정 후 초음파 bath의 부식이 일어났음을 확인할 수 있다.Through the above results, it was confirmed that compositions #1-1 to #1-8 containing a phosphoric acid-based metal chelating agent showed better effects in terms of cleaning and corrosiveness. In particular, when strong acids such as phosphoric acid or hydrochloric acid were used, severe corrosion occurred in metal masks and cleaning equipment even if a relatively small amount (10% by weight) was included. Figure 1 is a photograph of ultrasonic cleaning equipment after cleaning according to #2-4 above. Through Figure 1, it can be confirmed that corrosion of the ultrasonic bath occurred after cleaning.
도 2a 내지 도 2e는 외관상 세정성을 확인하기 위하여 세정 전후의 메탈 마스크를 촬영한 것이다. Figures 2a to 2e are photographs of a metal mask before and after cleaning to confirm its apparent cleanability.
도 2a는 레이저 가공을 진행한 후 메탈 마스크를 촬영한 것으로, 세정 전 형태이다. 도 2b는 후술할 실시예 5에 따른 것으로 LV1(외관 광택 및 세정력 양호) 정도의 외관상 세정성을 나타내는 것이고, 도 2c는 상기 표 5의 #1-7에 해당하는 것으로 LV2(외관 약간 어두움, 일부 debris 존재) 정도의 외관상 세정성을 나타내는 것이다. 도 2d는 상기 표 5의 #1-8에 해당하는 것으로 LV3(외관 어두움, debris 다수 존재), 도 2e는 상기 표 5의 #2―7에 해당하는 것으로 LV4(외관 변화 무, 세정 효과 없음) 정도를 나타내는 것이다. Figure 2a is a photo of a metal mask after laser processing and before cleaning. Figure 2b shows the apparent cleanability of LV1 (good external gloss and good cleaning power) according to Example 5, which will be described later, and Figure 2c corresponds to #1-7 of Table 5, and shows LV2 (slightly dark appearance, some This indicates the apparent cleanability of the level of debris present. Figure 2d corresponds to #1-8 of Table 5, LV3 (dark appearance, presence of many debris), Figure 2e corresponds to #2-7 of Table 5, LV4 (no change in appearance, no cleaning effect) It indicates the degree.
도 2a 내지 도 2e를 통해, 포스폰산계 금속 킬레이트제를 포함하는 세정용 조성물이 외관상으로 더욱 우수한 세정성을 나타냄을 확인할 수 있다.2A to 2E, it can be seen that the cleaning composition containing a phosphonic acid-based metal chelating agent apparently exhibits better cleaning properties.
상기 결과에 따라 이하 ATMP를 포함하는 다양한 조성을 갖는 세정용 조성물을 제조하여 테스트를 진행하였다.According to the above results, cleaning compositions with various compositions including ATMP were prepared and tested.
3. 실험예 1: 포스포산 금속 킬레이트의 함량에 따른 세정 테스트3. Experimental Example 1: Cleaning test according to the content of phosphoric acid metal chelate
하기 표 6의 조성에 따라, 포스포산 금속 킬레이트의 함량을 조절하여 세정용 조성물을 제조한 뒤 세정 테스트를 진행하였다.According to the composition in Table 6 below, a cleaning composition was prepared by adjusting the content of phosphoric acid metal chelate, and then a cleaning test was performed.
(중량%)(weight%)
(에칭성)(etchability)
(Pit부식성)(Pit corrosiveness)
(외관)(Exterior)
(중량%)(weight%)
(중량%)(weight%)
포스폰산 금속 킬레이트제를 70 중량% 이상 포함하는 실시예 1 내지 3에서, 비교예 1 및 비교예 2에 비해 초음파 bath 세정 장비의 부식성, 메타 마스크 부식성(에칭성), 메타 마스크 부식성(Pit 부식성), 및 외관상 세정성 면에서 모두 우수한 효과를 나타냄을 확인하였다.In Examples 1 to 3 containing 70% by weight or more of a phosphonic acid metal chelating agent, the corrosion, meta mask corrosion (etching), and meta mask corrosion (pit corrosion) of ultrasonic bath cleaning equipment compared to Comparative Examples 1 and 2 It was confirmed that it showed excellent effects in terms of both appearance and cleanability.
도 3은 상기 비교예 1에 따른 조성물을 이용한 메탈 마스크의 세정 전후 SEM 사진이다. 도 3a는 레이저 가공을 진행한 후 세정 전의 메탈 마스크를 촬영한 것이다. 도 3b는 상기 실시예 1에 따른 조성물을 이용하여 세정한 메탈 마스크를 촬영한 것이다.Figure 3 is an SEM photograph before and after cleaning the metal mask using the composition according to Comparative Example 1. Figure 3a is a photograph of a metal mask before cleaning after laser processing. Figure 3b is a photograph of a metal mask cleaned using the composition according to Example 1.
도 4는 상기 비교예 1과 실시예 2에 따른 조성물을 이용한 메탈 마스크의 세정 후 SEM 사진이다. 도 4a는 상기 비교예 1에 따른 조성물을 이용하여 세정한 메탈 마스크를 촬영한 것이고, 도 4b는 상기 실시예 2에 따른 조성물을 이용하여 세정한 메탈 마스크를 촬영한 것이다. 도 4a를 보면, 비교예 1에 따른 조성물을 이용하여 세정을 진행한 경우 pit부식이 나타남을 확인할 수 있다.Figure 4 is an SEM photograph after cleaning the metal mask using the composition according to Comparative Example 1 and Example 2. Figure 4a is a photograph of a metal mask cleaned using the composition according to Comparative Example 1, and Figure 4b is a photograph of a metal mask cleaned using the composition according to Example 2. Looking at Figure 4a, it can be seen that pit corrosion appears when cleaning is performed using the composition according to Comparative Example 1.
4. 실험예 2: 포스포산계 금속 킬레이트의 함량에 따른 세정 테스트4. Experimental Example 2: Cleaning test according to the content of phosphoric acid-based metal chelate
하기 표 7의 조성에 따라, 부식 억제제인 BTA를 공통적으로 0.01 중량% 포함하되, 포스포산 금속 킬레이트의 함량을 조절하여 세정용 조성물을 제조한 뒤 세정 테스트를 진행하였다.According to the composition in Table 7 below, a cleaning composition was prepared by including 0.01% by weight of BTA, a corrosion inhibitor, and adjusting the content of phosphoric acid metal chelate, and then a cleaning test was performed.
(중량%)(weight%)
(에칭성)(etchability)
(Pit부식성)(Pit corrosiveness)
(외관)(Exterior)
(중량%)(weight%)
(중량%)(weight%)
상기 실험예 1에서와 같이 포스폰산 금속 킬레이트제를 70 중량% 미만 포함하는 비교예 3의 경우 외관상 세정성이 좋지 않음을 확인하였으며, 포스폰산 금속 킬레이트제를 90 중량% 초과로 포함하는 비교예 4 및 비교예 5의 경우 역시 외관상 세정성이 좋지 않음을 확인할 수 있었다.As in Experimental Example 1, it was confirmed that the apparent cleanability of Comparative Example 3 containing less than 70% by weight of the phosphonic acid metal chelating agent was poor, and Comparative Example 4 containing more than 90% by weight of the phosphonic acid metal chelating agent. And in the case of Comparative Example 5, it was confirmed that the apparent cleanability was not good.
도 5는 상기 실시예 5에 따른 조성물을 이용한 메탈 마스크의 세정 전후 SEM 사진이다. 도 5a는 레이저 가공을 진행한 후 세정 전의 메탈 마스크를 촬영한 것이고, 도 5b는 상기 실시예 5에 따른 조성물을 이용하여 세정한 메탈 마스크를 촬영한 것이다. 또한, 도 5c는 레이저 가공을 진행한 후 세정 전의 메탈 마스크를 촬영한 것이고, 도 5d는 상기 실시예 5에 따른 조성물을 이용하여 세정한 메탈 마스크를 촬영한 것이다. 도 3과 비교하면, 관측된 수치를 통해 메탈 마스크 자체의 부식 정도가 더욱 심한 것을 확인할 수 있다.Figure 5 is an SEM photograph before and after cleaning the metal mask using the composition according to Example 5. Figure 5a is a photograph of a metal mask before cleaning after laser processing, and Figure 5b is a photograph of a metal mask cleaned using the composition according to Example 5. Additionally, Figure 5C is a photograph of a metal mask before cleaning after laser processing, and Figure 5D is a photograph of a metal mask cleaned using the composition according to Example 5. Compared to Figure 3, the observed values confirm that the degree of corrosion of the metal mask itself is more severe.
도 6은 상기 비교예 4 및 비교예 5의 세정용 조성물을 사용하여 세정한 뒤 촬영한 SEM 사진이다. 도 6a는 비교예 4, 도 6b는 비교예 5의 세정 후 사진을 촬영한 것이다. 도 6을 통해 세정용 조성물 중 ATMP가 90 중량% 초과하여 포함될 경우 미세 영역 내 세정 불량이 있음을 확인할 수 있고, 이는 점도 상승에 따라 미세 영역을 침투하는 데 한계가 발생하여 세정력이 오히려 감소하는 것으로 판단된다.Figure 6 is an SEM photograph taken after cleaning using the cleaning compositions of Comparative Examples 4 and 5. Figure 6a is a picture taken of Comparative Example 4, and Figure 6b is a picture taken of Comparative Example 5 after cleaning. Through Figure 6, it can be seen that when more than 90% by weight of ATMP is included in the cleaning composition, there is a cleaning defect in the fine area. This means that as the viscosity increases, there is a limit to penetrating the fine area, and the cleaning power actually decreases. It is judged.
5. 실험예 3: 부식 억제제의 함량에 따른 세정 테스트5. Experimental Example 3: Cleaning test according to the content of corrosion inhibitor
하기 표 8의 조성에 따라, 포스포산 금속 킬레이트를 공통적으로 80 중량% 포함하되, 부식 억제제인 BTA의 함량을 조절하여 세정용 조성물을 제조한 뒤 세정 테스트를 진행하였다.According to the composition in Table 8 below, a cleaning composition was prepared by generally containing 80% by weight of phosphoric acid metal chelate and adjusting the content of BTA, a corrosion inhibitor, and then a cleaning test was performed.
(중량%)(weight%)
(에칭성)(etchability)
(Pit부식성)(Pit corrosiveness)
(외관)(Exterior)
(중량%)(weight%)
(중량%)(weight%)
이를 통해 부식 억제제가 포함되는 것이 부식성 측면에서 더욱 바람직하나, 함량이 너무 높은 경우 외관상 세정성이 떨어짐을 확인할 수 있었다.Through this, it was confirmed that the inclusion of a corrosion inhibitor is more desirable in terms of corrosion, but if the content is too high, the apparent cleanability is poor.
상술한 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 수정 및 변형이 가능할 것이다. 따라서 본 발명에 기재된 실시예들은 본 발명의 기술 사상을 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 기술 사상이 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의해서 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The above description is merely an illustrative explanation of the technical idea of the present invention, and various modifications and variations will be possible to those skilled in the art without departing from the essential characteristics of the present invention. Accordingly, the embodiments described in the present invention are for illustrating the technical idea of the present invention, and the technical idea of the present invention is not limited by these examples. The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of rights of the present invention.
Claims (12)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20220052144 | 2022-04-27 | ||
| KR10-2022-0052144 | 2022-04-27 | ||
| KR1020220069543A KR102719037B1 (en) | 2022-04-27 | 2022-06-08 | Cleaning composition for metal mask and cleaning method using the same |
| KR10-2022-0069543 | 2022-06-08 |
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| Publication Number | Publication Date |
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| WO2023211110A1 true WO2023211110A1 (en) | 2023-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| PCT/KR2023/005599 Ceased WO2023211110A1 (en) | 2022-04-27 | 2023-04-25 | Composition for cleaning metal mask and cleaning method using same |
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| TW (1) | TWI867509B (en) |
| WO (1) | WO2023211110A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007010679A1 (en) * | 2005-07-21 | 2007-01-25 | Kao Corporation | Remover compositions |
| KR20080011243A (en) * | 2000-06-16 | 2008-01-31 | 카오카부시키가이샤 | Detergent composition |
| KR20100051839A (en) * | 2007-08-02 | 2010-05-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| KR20120029526A (en) * | 2010-09-17 | 2012-03-27 | 동우 화인켐 주식회사 | Metal-cleaning composition for manufacturing flat panel display |
| KR20180009021A (en) * | 2016-07-15 | 2018-01-25 | 삼성디스플레이 주식회사 | Cleaning composition for removing oxide and method of cleaning using the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021039137A1 (en) * | 2019-08-23 | 2021-03-04 | 富士フイルム株式会社 | Cleanser composition |
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2023
- 2023-04-25 WO PCT/KR2023/005599 patent/WO2023211110A1/en not_active Ceased
- 2023-04-26 TW TW112115614A patent/TWI867509B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080011243A (en) * | 2000-06-16 | 2008-01-31 | 카오카부시키가이샤 | Detergent composition |
| WO2007010679A1 (en) * | 2005-07-21 | 2007-01-25 | Kao Corporation | Remover compositions |
| KR20100051839A (en) * | 2007-08-02 | 2010-05-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| KR20120029526A (en) * | 2010-09-17 | 2012-03-27 | 동우 화인켐 주식회사 | Metal-cleaning composition for manufacturing flat panel display |
| KR20180009021A (en) * | 2016-07-15 | 2018-01-25 | 삼성디스플레이 주식회사 | Cleaning composition for removing oxide and method of cleaning using the same |
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| TW202342713A (en) | 2023-11-01 |
| TWI867509B (en) | 2024-12-21 |
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