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WO2023240949A1 - 一种光模块 - Google Patents

一种光模块 Download PDF

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Publication number
WO2023240949A1
WO2023240949A1 PCT/CN2022/138132 CN2022138132W WO2023240949A1 WO 2023240949 A1 WO2023240949 A1 WO 2023240949A1 CN 2022138132 W CN2022138132 W CN 2022138132W WO 2023240949 A1 WO2023240949 A1 WO 2023240949A1
Authority
WO
WIPO (PCT)
Prior art keywords
connection surface
substrate
signal line
optical module
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2022/138132
Other languages
English (en)
French (fr)
Inventor
张晓磊
王扩
刘星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hisense Broadband Multimedia Technology Co Ltd
Original Assignee
Hisense Broadband Multimedia Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202221481644.3U external-priority patent/CN217521403U/zh
Priority claimed from CN202210672549.XA external-priority patent/CN115079355A/zh
Priority claimed from CN202221563817.6U external-priority patent/CN217445362U/zh
Application filed by Hisense Broadband Multimedia Technology Co Ltd filed Critical Hisense Broadband Multimedia Technology Co Ltd
Priority to CN202280090570.7A priority Critical patent/CN118613748A/zh
Publication of WO2023240949A1 publication Critical patent/WO2023240949A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements

Definitions

  • the present application relates to the field of optical fiber communication technology, and in particular to an optical module.
  • Optical module is a tool for realizing mutual conversion of optical and electrical signals, and is one of the key components in optical communication equipment.
  • Optical modules usually include light emitting components, light receiving components, microprocessors and other devices.
  • separate light emitting components and light receiving components are packaged together in a metal casing to form an optical transceiver component.
  • the light-emitting component usually includes a tube base and a tube cap.
  • a ceramic substrate and a semiconductor refrigerator are arranged in a cavity surrounded by the tube base and the tube cap. Since the semiconductor column group is limited by the packaging structure of the light emitting component, the cooling area of the semiconductor refrigerator is limited, making the temperature control capability of the semiconductor refrigerator weak.
  • optical module including:
  • the light emitting component includes a tube holder; the tube holder has a semiconductor refrigerator installed on the top surface; the semiconductor refrigerator includes a first substrate and a second substrate; the first substrate includes a support plate and a heat dissipation plate; the support plate is fixed to the tube holder.
  • a first electrode and a second electrode are provided on the top surface of the No contact; the first electrode is connected to the positive terminal of the semiconductor column group; the second electrode is connected to the negative terminal of the semiconductor column group.
  • Figure 1 is the connection diagram of the optical communication system
  • Figure 2 is the structural diagram of an optical network terminal
  • Figure 3 is a structural diagram of an optical module according to some embodiments.
  • Figure 4 is an exploded structural view of an optical module according to some embodiments.
  • Figure 5 is a schematic structural diagram of an optical transceiver component according to some embodiments.
  • Figure 6 is an exploded view of an optical transceiver component according to some embodiments.
  • Figure 7 is a structural diagram of a light emitting component according to some embodiments.
  • Figure 8 is a structural diagram of the light emitting component with the tube cap removed according to some embodiments.
  • Figure 9 is a first angle cross-sectional view of a light emitting component according to some embodiments.
  • Figure 10 is a second angle cross-sectional view of a light emitting component in accordance with some embodiments.
  • Figure 11 is an exploded structural view of a light emitting component according to some embodiments.
  • Figure 12 is a structural diagram of a tube base and pins according to some embodiments.
  • Figure 13 is a structural diagram of a pipe cap according to some embodiments.
  • Figure 14 is a first angle structural view of the light emitting component except the tube base, pins and tube caps according to some embodiments;
  • Figure 15 is a second angle structural view of the light emitting component except the tube base, pins and tube caps according to some embodiments;
  • Figure 16 is a first exploded structural view of the light-emitting component except the tube base, pins and tube caps according to some embodiments;
  • Figure 17 is a second exploded structural view of the light emitting component excluding the tube base, pins and tube caps according to some embodiments;
  • Figure 18 is a first angle structural view of the third substrate according to some embodiments.
  • Figure 19 is a second angle structural view of the third substrate according to some embodiments.
  • Figure 20 is a third angle structural view of the third substrate according to some embodiments.
  • Figure 21 is a schematic structural diagram of a laser component according to some embodiments.
  • Figure 22 is a schematic diagram of the use of a laser chip according to some embodiments.
  • Figure 23 is a schematic structural diagram of another laser assembly provided according to some embodiments.
  • Figure 24 is a schematic diagram of the use of another laser chip according to some embodiments.
  • Figure 25 is a schematic structural diagram of yet another laser component provided according to some embodiments.
  • Figure 26 is a schematic structural diagram of yet another laser component according to some embodiments.
  • Figure 27 is a schematic structural diagram 2 of a substrate provided according to some embodiments.
  • Figure 28 is a schematic structural diagram three of a substrate provided according to some embodiments.
  • Figure 29 is an eye diagram provided according to some embodiments.
  • Figure 30 is another eye diagram provided in accordance with some embodiments.
  • Figure 31 is yet another eye diagram provided according to some embodiments.
  • Figure 32 is a structural diagram of a semiconductor refrigerator according to some embodiments.
  • Figure 33 is an exploded structural view of a semiconductor refrigerator according to some embodiments.
  • Figure 34 is a first angle structural view of the first substrate according to some embodiments.
  • Figure 35 is a second angle structural view of the first substrate according to some embodiments.
  • Figure 36 is a third angle structural view of the first substrate according to some embodiments.
  • Figure 37 is a first angle structural view of the second substrate according to some embodiments.
  • Figure 38 is a second angle structural view of the second substrate according to some embodiments.
  • Figure 39 is a third angle structural view of the second substrate according to some embodiments.
  • optical signals are used to carry information to be transmitted, and the optical signals carrying information are transmitted to information processing equipment such as computers through information transmission equipment such as optical fibers or optical waveguides to complete the transmission of information. Since light has passive transmission characteristics when transmitted through optical fibers or optical waveguides, low-cost, low-loss information transmission can be achieved.
  • the signals transmitted by information transmission equipment such as optical fibers or optical waveguides are optical signals, while the signals that can be recognized and processed by computers and other information processing equipment are electrical signals. Therefore, in order to distinguish between information transmission equipment such as optical fibers or optical waveguides and computers and other information processing equipment To establish an information connection between them, it is necessary to realize the mutual conversion of electrical signals and optical signals.
  • Optical modules realize the mutual conversion function of the above-mentioned optical signals and electrical signals in the field of optical communication technology.
  • the optical module includes an optical port and an electrical port.
  • the optical module realizes optical communication with information transmission equipment such as optical fiber or optical waveguide through the optical port, and realizes the electrical connection with the optical network terminal (for example, optical modem) through the electrical port.
  • the electrical connection Mainly used for power supply, I2C signal transmission, data information transmission and grounding; optical network terminals transmit electrical signals to computers and other information processing equipment through network cables or wireless fidelity technology (Wi-Fi).
  • Figure 1 is a connection diagram of an optical communication system.
  • the optical communication system includes a remote server 1000, a local information processing device 2000, an optical network terminal 100, an optical module 200, an optical fiber 101 and a network cable 103.
  • the optical fiber 101 is connected to the remote server 1000, and the other end is connected to the optical network terminal 100 through the optical module 200.
  • the optical fiber itself can support long-distance signal transmission, such as signal transmission of thousands of meters (6 kilometers to 8 kilometers). On this basis, if a repeater is used, unlimited distance transmission can be theoretically achieved. Therefore, in a common optical communication system, the distance between the remote server 1000 and the optical network terminal 100 can usually reach several kilometers, tens of kilometers, or hundreds of kilometers.
  • the local information processing device 2000 can be any one or more of the following devices: router, switch, computer, mobile phone, tablet computer, television, etc.
  • the physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing device 2000 and the optical network terminal 100 .
  • the connection between the local information processing device 2000 and the remote server 1000 is completed by the optical fiber 101 and the network cable 103; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical module 200 and the optical network terminal 100.
  • the optical module 200 includes an optical port and an electrical port.
  • the optical port is configured to access the optical fiber 101, so that the optical module 200 establishes a bidirectional optical signal connection with the optical fiber 101;
  • the electrical port is configured to access the optical network terminal 100, so that The optical module 200 establishes a bidirectional electrical signal connection with the optical network terminal 100 .
  • the optical module 200 realizes mutual conversion between optical signals and electrical signals, thereby establishing an information connection between the optical fiber 101 and the optical network terminal 100 .
  • the optical signal from the optical fiber 101 is converted into an electrical signal by the optical module 200 and then input into the optical network terminal 100.
  • the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module 200 and input into the optical fiber 101. Since the optical module 200 is a tool for converting optical signals and electrical signals and does not have the function of processing data, the information does not change during the above-mentioned photoelectric conversion process.
  • the optical network terminal 100 includes a substantially rectangular parallelepiped housing, and an optical module interface 102 and a network cable interface 104 provided on the housing.
  • the optical module interface 102 is configured to access the optical module 200, so that the optical network terminal 100 and the optical module 200 establish a bidirectional electrical signal connection;
  • the network cable interface 104 is configured to access the network cable 103, so that the optical network terminal 100 and the network cable 103 Establish a two-way electrical signal connection.
  • the optical module 200 and the network cable 103 are connected through the optical network terminal 100 .
  • the optical network terminal 100 transmits the electrical signal from the optical module 200 to the network cable 103, and transmits the electrical signal from the network cable 103 to the optical module 200. Therefore, the optical network terminal 100 serves as the host computer of the optical module 200 and can monitor the optical module. 200 job.
  • the host computer of the optical module 200 may also include an optical line terminal (Optical Line Terminal, OLT), etc.
  • the remote server 1000 establishes a bidirectional signal transmission channel with the local information processing device 2000 through the optical fiber 101, the optical module 200, the optical network terminal 100 and the network cable 103.
  • Figure 2 is a structural diagram of an optical network terminal. In order to clearly show the connection relationship between the optical module 200 and the optical network terminal 100, Figure 2 only shows the structure of the optical network terminal 100 related to the optical module 200. As shown in Figure 2, the optical network terminal 100 also includes a circuit board 105 provided in the housing, a cage 106 provided on the surface of the circuit board 105, a heat sink 107 provided on the cage 106, and electrical connections provided inside the cage 106. device.
  • the electrical connector is configured to be connected to the electrical port of the optical module 200; the heat sink 107 has fins and other protrusions that increase the heat dissipation area.
  • the optical module 200 is inserted into the cage 106 of the optical network terminal 100, and the optical module 200 is fixed by the cage 106.
  • the heat generated by the optical module 200 is conducted to the cage 106, and then diffused through the heat sink 107.
  • the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106, so that the optical module 200 and the optical network terminal 100 establish a bidirectional electrical signal connection.
  • the optical port of the optical module 200 is connected to the optical fiber 101, so that the optical module 200 and the optical fiber 101 establish a bidirectional optical signal connection.
  • Figure 3 is two schematic diagrams of the structure of an optical module according to some embodiments.
  • Figure 4 is two schematic diagrams of the exploded structure of an optical module according to some embodiments.
  • the same components are labeled with the same numbers in Figures 3 and 4.
  • the optical module 200 includes a shell, a circuit board 300 and a circuit board 300 disposed in the shell.
  • Optical transceiver component 400 As shown in Figures 3 and 4, the optical module 200 includes a shell, a circuit board 300 and a circuit board 300 disposed in the shell.
  • the housing includes an upper housing 201 and a lower housing 202.
  • the upper housing 201 is covered on the lower housing 202 to form the above-mentioned housing with two openings; the outer contour of the housing generally presents a square body.
  • the lower case 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper case 201 includes a cover plate 2011, and the cover plate 2011 is closed On the two lower side plates 2022 of the lower housing 202, the above-mentioned housing is formed.
  • the lower case 202 includes a bottom plate 2021 and two lower side plates 2022 located on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021;
  • the upper case 201 includes a cover plate 2011 and two lower side plates 2022 located on both sides of the cover plate 2011.
  • the two upper side plates of the cover plate 2011 are vertically arranged, and are combined with the two lower side plates 2022 to realize that the upper housing 201 is covered on the lower housing 202 .
  • the direction of the connection line between the two openings 204 and 205 may be consistent with the length direction of the optical module 200 , or may be inconsistent with the length direction of the optical module 200 .
  • the opening 204 is located at the end of the optical module 200 (the right end of FIG. 3 ), and the opening 205 is also located at the end of the optical module 200 (the left end of FIG. 3 ).
  • the opening 204 is located at an end of the optical module 200 and the opening 205 is located at a side of the optical module 200 .
  • the opening 204 is an electrical port, and the golden finger 301 of the circuit board 300 extends from the electrical port 204 and is inserted into the host computer (for example, the optical network terminal 100); the opening 205 is an optical port, configured to access the external optical fiber 101, so that The external optical fiber 101 is connected to the optical transceiver component 400 inside the optical module 200 .
  • the assembly method of combining the upper housing 201 and the lower housing 202 facilitates the installation of the circuit board 300, the optical transceiver component 400 and other components into the housing, and the upper housing 201 and the lower housing 202 form packaging protection for these components.
  • the assembly method of combining the upper housing 201 and the lower housing 202 facilitates the installation of the circuit board 300, the optical transceiver component 400 and other components into the housing, and the upper housing 201 and the lower housing 202 form packaging protection for these components.
  • the deployment of positioning components, heat dissipation components, and electromagnetic shielding components of these components is facilitated, which is conducive to automated production.
  • the upper housing 201 and the lower housing 202 are generally made of metal materials, which facilitates electromagnetic shielding and heat dissipation.
  • the optical module 200 also includes an unlocking component 203 located outside its housing.
  • the unlocking component 203 is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the connection between the optical module 200 and the host computer. fixed connection.
  • the unlocking component 203 is located on the outer walls of the two lower side plates 2022 of the lower housing 202, and has a snap component that matches the host computer cage (for example, the cage 106 of the optical network terminal 100).
  • the optical module 200 is inserted into the cage of the host computer, the optical module 200 is fixed in the cage of the host computer by the engaging parts of the unlocking part 203; when the unlocking part 203 is pulled, the engaging parts of the unlocking part 203 move accordingly, thereby changing
  • the connection relationship between the engaging component and the host computer is to release the engagement relationship between the optical module 200 and the host computer, so that the optical module 200 can be pulled out from the cage of the host computer.
  • the circuit board 300 includes circuit wiring, electronic components and chips.
  • the electronic components and chips are connected together according to the circuit design through the circuit wiring to realize functions such as power supply, electrical signal transmission, and grounding.
  • Electronic components include, for example, capacitors, resistors, transistors, and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).
  • Chips include, for example, Microcontroller Unit (MCU), laser chip 4026, limiting amplifier (limiting amplifier), clock and data recovery (Clock and Data Recovery, CDR) chip, power management chip, digital signal processing (Digital Signal Processing, DSP) chip.
  • the circuit board 300 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also perform a load-bearing function. For example, the rigid circuit board can smoothly carry the above-mentioned electronic components and chips; when the optical transceiver component is located on the circuit board, the rigid circuit board The circuit board can also provide smooth loading; the rigid circuit board can also be inserted into the electrical connector in the host computer cage.
  • the circuit board 300 also includes gold fingers formed on its end surface, and the gold fingers are composed of a plurality of mutually independent pins.
  • the circuit board 300 is inserted into the cage 106 and is electrically connected to the electrical connector in the cage 106 by the gold finger 301 .
  • the golden fingers can be provided only on one side of the circuit board 300 (for example, the upper surface shown in FIG. 4 ), or can be provided on the upper and lower surfaces of the circuit board 300 to adapt to situations where a large number of pins are required.
  • the golden finger is configured to establish an electrical connection with the host computer to realize power supply, grounding, I2C signal transmission, data signal transmission, etc.
  • flexible circuit boards are also used in some optical modules.
  • Flexible circuit boards are generally used in conjunction with rigid circuit boards as a supplement to rigid circuit boards.
  • a flexible circuit board can be used to connect the rigid circuit board and the optical transceiver component.
  • the optical transceiver component 400 includes a light emitting component 402 and a light receiving component 403.
  • the light emitting component 402 is configured to transmit an optical signal
  • the light receiving component 403 is configured to receive an optical signal.
  • the light emitting component 402 and the light receiving component 403 are combined together to form an integrated light transceiver component 400.
  • FIG. 5 is a schematic structural diagram of an optical transceiver component 400 according to some embodiments.
  • Figure 6 is an exploded view of optical transceiver component 400 in accordance with some embodiments.
  • the optical transceiver component 400 includes a round square tube 401 , a light emitting component 402 , a light receiving component 403 , an optical component 404 and a fiber optic adapter 405 .
  • the round and square tube body 401 is provided with a first nozzle, a second nozzle and a third nozzle, which are used to carry and fix the light emitting component 402, the light receiving component 403, the optical component 404 and the optical fiber adapter 405.
  • the light emitting component 402 is embedded in the first tube opening
  • the light receiving component 403 is embedded in the second tube opening
  • the optical component 404 is arranged in the inner cavity of the round tube body 401
  • the optical fiber adapter 405 is embedded in the third tube opening.
  • the first nozzle and the second nozzle are respectively arranged on adjacent side walls of the round and square tube body 401, and the first and third nozzles are respectively arranged on the side walls of the round and square tube body 401 in the length direction.
  • the second nozzle is provided on the side wall of the round and square tube body 401 in the width direction.
  • the round and square tube body 401 is generally made of metal material, which is beneficial to electromagnetic shielding and heat dissipation. Specifically, the light emitting component 402 contacts the round square tube body 401 through the first tube opening, and the light receiving component 403 contacts the round square tube body 401 through the second tube opening.
  • the light-emitting component 402 and the light-receiving component 403 are directly press-fitted into the round-square tube body 401, and the round-square tube body 401 is in contact with the light-emitting component 402 and the light-receiving component 403 respectively, either directly or through a thermally conductive medium. In this way, the round and square tube body 401 can be used for heat dissipation of the light emitting component 402 and the light receiving component 403, ensuring the heat dissipation effect of the light emitting component 402 and the light receiving component 403.
  • the light emitting component 402 is connected to the circuit board 300 through a flexible circuit board and is used to emit data light.
  • Figure 7 is a structural diagram of a light emitting component according to some embodiments.
  • the light emitting component 402 includes a tube base 4021 and a tube cap 4022, as well as other devices provided in the tube cap 4022 and the tube base 4021.
  • the pipe cap 4022 covers one end of the pipe base 4021, and the pipe cap 4022 and the pipe base 4021 enclose a cavity.
  • the tube base 4021 includes a plurality of pins 4023, and the pins 4023 are used to realize the electrical connection between the flexible circuit board and other electrical devices in the light-emitting component 402, and thereby to realize the electrical connection between the light-emitting component 402 and the circuit board 300.
  • Figure 8 is a structural diagram of a light emitting component with a tube cap removed, according to some embodiments.
  • Figure 9 is a first angle cross-sectional view of a light emitting component in accordance with some embodiments.
  • Figure 10 is a second angle cross-sectional view of a light emitting component in accordance with some embodiments.
  • Figure 11 is an exploded structural view of a light emitting component according to some embodiments.
  • Figure 12 is a structural diagram of a header and pins according to some embodiments.
  • Figure 13 is a structural diagram of a tube cap according to some embodiments.
  • a laser component 4000 is disposed in the cavity surrounded by the tube cap 4022 and the tube base 4021 .
  • the laser component 4000 is used to generate optical signals and the generated optical signals pass through the tube cap 4022 .
  • the use form of the laser component 4000 is not limited to the structure shown in FIG. 7 , and the laser component 4000 can also be directly mounted on the circuit board 206 .
  • the laser chip 4026 includes a light-emitting area and an electro-absorption modulation area.
  • the positive terminal of the light-emitting area is connected to the laser chip 4026 on the circuit board.
  • the negative terminal of the light-emitting area is grounded.
  • the positive terminal of the electro-absorption modulation area is connected to the laser chip 4026 on the circuit board.
  • the power chip is connected, the negative terminal of the electric absorption modulation area is grounded, the light-emitting area emits light that does not carry data and monitoring light according to the driving signal, and the electric absorption modulation area modulates the light that does not carry data into data light according to the modulation signal and bias signal.
  • the use form of the laser component 400 is not limited to the structure shown in FIG.
  • the laser component 400 can also be directly mounted on the circuit board 206 .
  • the structure of the laser component 4000 is not limited to the structure shown in Figure 7, and can also be a laser component with other structural forms; the third substrate 4025 can be a ceramic substrate, but is not limited to a ceramic substrate.
  • the tube cap 4022 is provided with a through hole 40221, and the first lens is bonded to the through hole 40221.
  • the first lens is a collimating lens.
  • the data light emitted by the laser chip 4026 is collimated by the first lens on the tube cap 4022 and then enters the round square tube body 401. It is condensed by the optical component 404 in the round square tube body 401 and then coupled to the optical fiber adapter 405.
  • the modulation drive signal, the control signal and the bias signal are all high-frequency signals.
  • the drive signal is provided by the laser chip 4026, the modulation signal is also provided by the laser chip 4026, and the bias signal is provided by the power chip.
  • the light receiving component 403 is connected to the circuit board 300 through a flexible circuit board, and is provided with a light receiving chip for receiving data light.
  • the light receiving component 403 includes a tube base and a tube cap.
  • the tube cap is located on the tube base, and the tube cap and the tube base enclose a cavity.
  • the tube base is provided with a light receiving chip and a second lens.
  • the data light emitted by the optical fiber adapter 405 is reflected by the optical component 404 to the second lens in the light receiving component 403, and is converged to the light receiving chip through the second lens.
  • the optical component 404 is disposed in the inner cavity of the round tube body 401 and is used to adjust the data light emitted by the light emitting component 402 and adjust the data light incident on the light receiving component 403 .
  • the light emitting component 402 is embedded in the first nozzle of the round and square tube body
  • the light receiving component 403 is inlaid in the second nozzle of the round and square tube body
  • the optical fiber adapter 405 is inlaid in the third nozzle of the round and square tube body.
  • the light emitting component 402 and the light receiving component 403 establish optical connections with the optical fiber adapter 405 respectively.
  • the data light emitted by the light transmitting component 402 and the light received by the light receiving component 403 are transmitted through the same optical fiber in the optical fiber adapter 405. That is, the same optical fiber in the optical fiber adapter 405 is the transmission channel for the light entering and exiting the optical transceiver component.
  • the optical transceiver The component implements single-fiber bidirectional optical transmission mode.
  • the light emitting component 402 includes a pin 4023.
  • the first end of the pin 4023 is connected to the circuit board 300 through the flexible circuit board, and the second end of the pin 4023 extends into the tube base 4021 and is connected to each device on the tube base 4021.
  • the pin 4023 includes a first pin 40231, a second pin 40232, a third pin 40233, a fourth pin 40234, a fifth pin 40235 and a sixth pin 40236.
  • the first pin 40231 is connected to the electroabsorption modulation area of the laser chip 4026 through a high-frequency signal line.
  • the second pin 40232 is connected to the light-emitting area of the laser chip 4026 through a high-frequency signal line.
  • the third pin 40233 and the fourth pin 40234 are respectively connected to the two electrodes of the semiconductor refrigerator 4024.
  • the fifth pin 40235 is connected to the thermistor 4029.
  • the sixth pin 40236 is connected to the light detector 4028.
  • the second pin 40232 is connected to the light-emitting area of the laser chip 4026 through the high-frequency signal line, the second pin 40232 is used to transmit the second high-frequency signal. Since the first pin 40231 is connected to the electroabsorption modulation area of the laser chip 4026 through the high-frequency signal line, the first pin 40231 is used to transmit the first high-frequency signal.
  • Figure 14 is a structural diagram of a light emitting component excluding the tube base, pins and tube caps according to some embodiments.
  • Figure 15 is a second angle structural view of the light emitting component except the tube base, pins and tube caps according to some embodiments.
  • Figure 16 is a first exploded structural view of the light emitting component excluding the base, pins and cap, according to some embodiments.
  • Figure 17 is a second exploded structural view of the light emitting component excluding the base, pins and cap, according to some embodiments.
  • a semiconductor refrigerator 4024 in addition to the laser chip 4026, a semiconductor refrigerator 4024, a third substrate 4025, a matching capacitor 4027, Photodetector 4028 and thermistor 4029.
  • the semiconductor refrigerator 4024 is fixed on the top surface of the tube base 4021 and is provided with a third substrate 4025, a photodetector 4028 and a thermistor 4029 for regulating the temperature of the third substrate 4025.
  • the third substrate 4025 and the photodetector 4028 can be fixed on the semiconductor refrigerator 4024 through the heat sink substrate, or the third substrate 4025 and the photodetector 4028 can be directly fixed on the semiconductor refrigerator 4024.
  • the third substrate 4025 and the photodetector 4028 are directly fixed on the semiconductor refrigerator 4024, which reduces the use of the heat sink substrate, so that the semiconductor refrigerator 4024 can directly dissipate heat to the third substrate 4025 and the photodetector 4028.
  • the heat dissipation efficiency of the third substrate 4025 and the photodetector 4028 is improved.
  • the third substrate 4025 is not in contact with the top surface of the tube base 4021.
  • One side is in contact with the semiconductor refrigerator 4024.
  • the other side is provided with a laser chip 4026, a first signal line transmission layer, a second signal line transmission layer, a terminal resistor and Matching capacitor 4027.
  • the third substrate 4025 is in contact with the semiconductor refrigerator 4024, which means that one side of the third substrate 4025 is in contact with the second substrate 40243 of the semiconductor refrigerator 4024, and the third substrate 4025 is in contact with the first substrate 40241 of the semiconductor refrigerator 4024. not in contact.
  • the third substrate 4025 is a ceramic substrate.
  • the ceramic substrate is metallized ceramic, with high-frequency signal lines laid on the surface to form a circuit pattern, which can power the laser chip 4026, terminal resistor and matching capacitor 4027; at the same time, the ceramic substrate has good thermal conductivity and can also be used as the laser chip 4026, terminal resistor And the heat sink substrate matching the capacitor 4027 for heat dissipation.
  • the laser chip 4026 is directly soldered to the third substrate 4025 through solder or soldered to the third substrate 4025 through a conductive metal layer, and is used to emit data light.
  • the first signal line transmission layer is laid by the first high-frequency signal line and is used to transmit the first high-frequency signal so that the electrical absorption modulation region modulates the light to obtain data light.
  • the first end of the first signal line transmission layer is welded to the first pin 40231, and the second end is wired to the electroabsorption modulation area.
  • the first high-frequency signal transmitted from the first pin 40231 is transmitted to the electroabsorption modulation area through the first high-frequency signal line of the first signal line transmission layer.
  • the electroabsorption modulation region modulates light that does not carry data according to the first high-frequency signal to obtain data light.
  • the first high-frequency signal is a high-frequency bias signal and a high-frequency modulation signal.
  • the second signal line transmission layer is laid by the second high-frequency signal line and is used to transmit the second high-frequency signal so that the light-emitting area emits light.
  • the first end is wired and connected to the second pin 40232, and the second end is wired and connected to the light-emitting area.
  • the second high-frequency signal transmitted from the second pin 40232 is transmitted to the light-emitting area through the second high-frequency signal line of the second signal line transmission layer.
  • the light-emitting area emits light without data according to the second high-frequency signal.
  • the second high-frequency signal includes a high-frequency driving signal.
  • Matching capacitor 4027 the positive terminal is connected to the negative terminal of the terminal resistor, and the negative terminal is grounded to reduce power consumption.
  • the positive end of the terminal resistor is connected to the laser chip 4026 by wiring.
  • the terminal resistor is used to reduce signal reflection caused by impedance discontinuity.
  • the terminal resistor and the matching capacitor 4027 are connected in series, so that they are connected in parallel with the laser chip 4026.
  • the photodetector 4028 is located on the back of the laser chip 4026.
  • the positive terminal is connected to the sixth pin 40236, and the negative terminal is fixed on the semiconductor refrigerator 4024. It is used to receive the monitoring light emitted by the laser chip 4026 to generate monitoring current.
  • the positive terminal of the photodetector 4028 is connected to the MCU on the circuit board 300 through the sixth pin 40236.
  • the thermistor 4029 has its positive terminal connected to the fifth pin 40235 and its negative terminal grounded. It is located near the third substrate 4025 and is used to collect the operating temperature of the third substrate 4025 to monitor the operating temperature of the third substrate 4025. Specifically, the temperature of the third substrate 4025 is collected in real time through the thermistor 4029, and the collected temperature of the third substrate 4025 is fed back to the semiconductor refrigerator drive circuit. The semiconductor refrigerator drive circuit responds to the received temperature of the third substrate 4025. , determine the input current to the semiconductor refrigerator 4024 to realize heating or cooling of the semiconductor refrigerator 4024, so that the temperature of the third substrate 4025 can be controlled within the target temperature range.
  • Figure 18 is a first angle structural view of the third substrate according to some embodiments.
  • Figure 19 is a second angle structural view of the third substrate according to some embodiments.
  • Figure 20 is a third angle structural view of the third substrate according to some embodiments.
  • the third substrate 4025 includes a first connection surface 40251, a second connection surface 40252, a third connection surface 40253, a fourth connection surface 40254, a fifth connection surface 40255, a sixth Connection surface 40256, seventh connection surface 40257 and eighth connection surface 40258.
  • the second connection surface 40252, the third connection surface 40253 and the fourth connection surface 40254 are respectively connected to the first connection surface 40251 and the fifth connection surface 40255.
  • the fifth connection surface 40255, the sixth connection surface 40256 and the first connection surface 40251 are in sequence. connection, the seventh connection surface 40257 is connected to the first connection surface 40251, the fourth connection surface 40254, the fifth connection surface 40255 and the sixth connection surface 40256 respectively, and the eighth connection surface 40258 is connected to the first connection surface 40251 and the second connection surface respectively.
  • the surface 40252, the fifth connection surface 40255 and the sixth connection surface 40256 are connected.
  • the second connection surface 40252 of the third substrate 4025 and the third connection surface 40253 of the third substrate 4025 form an L-shaped first notch.
  • One side of the third substrate 4025 is in contact with the second substrate 40243.
  • the first connection surface 40251 of the third substrate 4025 is connected to the second substrate 40243, so that the first connection surface 40251 of the third substrate 4025 is in contact with the second substrate 40243.
  • the other side of the third substrate 4025 is provided with a laser chip 4026, a first signal line transmission layer, a second signal line transmission layer, a terminal resistor and a matching capacitor 4027.
  • the other side of the third substrate 4025 is provided with a first signal transmission area 402551, a first installation area 402552, a second installation area 402553, a third installation area 402554, a second signal transmission area 402555 and a fourth installation area 402556.
  • the third substrate 4025 is a metallized ceramic substrate, high-frequency signal lines can be laid on the surface to form a circuit pattern, and the first high-frequency signal lines are laid in the first signal transmission area 402551 on the third substrate 4025 to form the first signal.
  • Line transport layer The first mounting area 402552 is used to place the laser chip 4026.
  • the second mounting area 402553 and the fourth mounting area 402556 are used to place the matching capacitor 4027.
  • the third installation area 402554 is used to place the terminal resistor.
  • a second high-frequency signal line is laid in the second signal transmission area 402555 to form a second signal line transmission layer.
  • the first signal line transmission layer, the second signal line transmission layer, the laser chip 4026, the matching capacitor 4027 and the terminal resistor are provided on the other side of the third substrate 4025.
  • the other side of the third substrate 4025 is provided with a first signal transmission area 402551, a first installation area 402552, a second installation area 402553, a third installation area 402554 and a second signal transmission area 402555, which refers to the third substrate
  • the fifth connection surface 40255 of 4025 is provided with a first signal transmission area 402551, a first installation area 402552, a second installation area 402553, a third installation area 402554 and a second signal transmission area 402555.
  • the laser chip 4026 is located in the first mounting area 402552 of the fifth connection surface 40255 of the third substrate 4025.
  • the terminal resistor is located in the third installation area 402554 of the fifth connection surface 40255 of the third substrate 4025.
  • the positive terminal is wired and connected to the second end of the first signal line transmission layer, and the negative terminal is connected to the third installation area 402554.
  • the matching capacitor 4027 is located in the second mounting area 402553 and the fourth mounting area 402556 of the fifth connection surface 40255 of the third substrate 4025.
  • the positive terminal is connected to the second mounting area 402553, and the negative terminal is connected to the fourth mounting area 402556.
  • All areas on the fifth connection surface 40255 of the third substrate 4025 except the first signal transmission area 402551, the second mounting area 402553, the third mounting area 402554 and the second signal transmission area 402555 are ground. Among them, the second installation area 402553 and the third installation area 402554 are connected, and the second installation area 402553 and the fourth installation area 402556 are not connected.
  • the first signal line transmission layer includes a first sub-signal line transmission layer, a second sub-signal line transmission layer and a third sub-signal line transmission layer.
  • the first sub-signal line transmission layer is close to the laser chip 4026 and is connected to the positive terminal of the electroabsorption modulation area of the laser chip 4026 through gold wire bonding.
  • the second sub-signal line transmission layer is located between the first sub-signal line transmission layer and the second sub-signal line transmission layer, and is uninterrupted from the first sub-signal line transmission layer and the third sub-signal line transmission layer.
  • the third sub-signal line transmission layer is close to the first pin 40231 and welded to the first pin 40231.
  • the ceramic substrate includes a first ceramic substrate and a second ceramic substrate.
  • the first ceramic substrate and the second ceramic substrate are connected by gold wires.
  • a laser chip and a first high-frequency signal line are provided on the first ceramic substrate. and a second high-frequency signal line.
  • a third high-frequency signal line is provided on the second ceramic substrate.
  • the first high-frequency signal line and the third high-frequency signal line are connected by gold wires.
  • the first high-frequency signal line and the third high-frequency signal line are connected by a gold wire.
  • the three high-frequency signal lines are used to provide high-frequency modulation signals and high-frequency bias signals for the electroabsorption modulation area of the laser chip, and the second high-frequency signal line is used to provide high-frequency driving signals for the light-emitting area of the laser chip.
  • a third substrate 4025 is provided in the light emitting component.
  • the third substrate 4025 is provided with a laser chip, a first high-frequency signal line and a third Two high-frequency signal lines, and the first high-frequency signal line is uninterrupted.
  • the first high-frequency signal line is used to provide high-frequency modulation signals and high-frequency bias signals for the electroabsorption modulation area of the laser chip 4026.
  • the second high-frequency signal line The line is used to provide high-frequency driving signals to the light-emitting area of the laser chip 4026.
  • the medium where the first signal line transmission layer formed by the first high-frequency signal line is located has not changed, so the first The dielectric constant of the medium where the signal line transmission layer is located has not changed, and there is no impedance mismatch in the first signal line transmission layer on the third substrate.
  • the first high-frequency signal line is discontinuous, and the discontinuous parts are connected by gold wires, and the gold wires are suspended in air or vacuum, then the impedance of the discontinuous part of the gold wire does not match the first high-frequency signal line. In order to further avoid impedance mismatch, the first high-frequency signal line on the third substrate is uninterrupted.
  • the dielectric constant of the third substrate has not changed, and the first signal line transmission layer on the third substrate is uninterrupted, there is no impedance mismatch in the first signal line transmission layer on the third substrate, increasing the impedance. continuity, thereby weakening signal reflection and improving the high-frequency performance of the optical module.
  • the laser chip in the light emitting component will be described in detail below:
  • the laser assembly 4000 includes a laser chip 4026 and a third substrate 4025.
  • a circuit is laid on the upper surface of the third substrate 4025.
  • the laser chip 4026 is connected to the corresponding circuit on the third substrate 4025 through wiring.
  • the laser chip 4026 may be an EML; the third substrate 4025 and the bonding wire between the laser chip 4026 and the third substrate 4025 are a packaging structure, so that the EML and the third substrate 4025 are packaged to form an EML laser component.
  • the laser assembly 4000 further includes a matching circuit 430 connected in parallel with the laser chip 4026.
  • the matching circuit 430 is provided on the third substrate 4025; the matching circuit 430 usually includes a resistor and a capacitor device, the resistor is used to match the impedance of the transmission line, and the capacitor is used to reduce the power consumption of the device in the matching circuit.
  • the performance of the laser chip 4026 cannot reach an optimal level. Especially when the performance of the EAM itself in the laser chip 4026 is slightly poor, the eye diagram of the laser chip 4026 will have more noise and jitter. It is relatively large, resulting in insufficient eye pattern template margin.
  • the embodiment of the present application also provides a matching circuit 430.
  • the matching circuit 430 also includes an inductor, and the inductor is connected in series between the resistor and the capacitor.
  • Figure 22 is a schematic diagram of the use of a laser chip according to some embodiments.
  • Figure 22 shows a schematic circuit diagram of a matching circuit 430.
  • the matching circuit 430 is connected in parallel with the laser chip 4026.
  • the matching circuit 430 includes a first resistor 434, an inductor 435 and a capacitor 436; one end of the first resistor 434 is electrically connected to the input end of the laser chip 4026, and the other end is connected to the inductor 435.
  • One end of the inductor 435 is connected to one end of the capacitor 436, and the other end of the capacitor 436 is connected to ground.
  • the embodiment of the present application also provides another laser component 4000.
  • Figure 23 is a schematic structural diagram of another laser assembly according to some embodiments.
  • the laser component 4000 provided by the embodiment of the present application also includes a laser chip 4026 and a third substrate 4025; the third substrate 4025 is provided with a first reference ground 421, a high-frequency signal line 422 and a matching circuit 430; the laser chip 4026 is mounted on the third substrate 4025, and the input end of the laser chip 4026 is wired and connected to the high-frequency signal line 422.
  • the high-frequency signal line 422 is provided on one side of the first reference ground 421, and the matching circuit 430 is provided on the other side of the first reference ground 421 to facilitate control of the input end of the laser chip 4026 to the high-frequency signal line. 422 and the matching circuit 430 and the space on the top surface of the third substrate 4025 should be reasonably laid out.
  • the matching circuit 430 includes a first bonding pad 431, a second bonding pad 432, a third bonding pad 433, a first resistor 434, an inductor 435 and a capacitor 436; Disposed on the surface of the top of the third substrate 4025; one end of the first resistor 434 is electrically connected to the first pad 431, and the other end is electrically connected to the second pad 432; one end of the inductor 435 is electrically connected to the second pad 432, and the other end is electrically connected.
  • the specific values of the first resistor 434, the inductor 435 and the capacitor 436 can be determined through high-frequency simulation in combination with the laser chip 4026.
  • the first resistor 434 may be a thin film resistor.
  • the inductor has high impedance at high frequency, which will increase the reflection of the channel, and it is generally considered that the inductor is harmful to high-frequency signal transmission.
  • the inductor 435 is connected in series between the first resistor 434 and the capacitor 436 During this time, the inductor 435 and the laser chip 4026 are connected in parallel to create a resonance at the Nyquist frequency S21, which can increase the 40261dB bandwidth of the laser chip, thereby increasing the eye diagram opening and improving the eye diagram quality.
  • the attenuation from DC to the Nyquist frequency S21 should be less than 1dB.
  • the attenuation of the signal must increase with the increase of frequency. Especially when the laser chip itself still has parasitic capacitance and junction capacitance, the attenuation of the signal will be further aggravated, which will lead to a 1dB bandwidth. If it is not enough, the rising and falling edges of the eye diagram coming out of the laser chip will take longer and the eye diagram will be closed.
  • the matching circuit 430 provided in the embodiment of the present application can use inductance compensation technology to increase the 1dB bandwidth of the channel without increasing reflection.
  • the eye diagram of the laser chip is reflection, whose root cause is the impedance mismatch between the terminal impedance of the EAM in the laser chip 4026 and the design of the channel transmission line. Since the EAM itself has parasitic capacitance and junction capacitance, the capacitance has low impedance characteristics at high frequencies, which shows a mismatch between the terminal impedance and the transmission line impedance, and there is a large reflection, resulting in a lot of noise in the eye diagram coming out of the chip. Insufficient template margin.
  • the introduced inductor 435 can be used to compensate for the low impedance characteristics of the capacitor, improve the equivalent terminal impedance of the EAM chip and the matching network, and make it as close as possible to the characteristic impedance of the transmission line to reduce reflection. Improve chip eye diagram template margin.
  • Figure 24 is a schematic diagram of the use of another laser chip according to some embodiments.
  • Figure 24 shows a schematic circuit diagram of a matching circuit 430.
  • the matching circuit 430 also includes a second resistor 437.
  • One end of the second resistor 437 is electrically connected to the input end of the laser chip 4026, and the other end is connected to one end of the capacitor 436. Then the second resistor 437
  • the first resistor 434 and the inductor 435 are connected in parallel and the second resistor 437 and the capacitor 436 are connected in series.
  • FIG. 25 is a schematic structural diagram of yet another laser assembly provided according to some embodiments.
  • the laser component 4000 shown in FIG. 25 adds a second resistor 437 compared with the laser component 4000 shown in FIG. 23 , in order to further improve the performance of the matching circuit 430 .
  • a fourth soldering pad 438 is also provided on the top surface of the third substrate 4025.
  • One end of the second resistor 437 is electrically connected to the first soldering pad 431, and the other end is electrically connected to the fourth soldering pad 438.
  • Figure 26 is a schematic structural diagram of a substrate according to some embodiments.
  • the top surface of the third substrate 4025 is provided with a first reference ground 421, a high-frequency signal line 422, a first bonding pad 431, a second bonding pad 432, a third bonding pad 433 and a fourth bonding pad 438;
  • the first reference ground 421 is provided along the width direction of the third substrate 4025, the high-frequency signal line 422 is provided on one side of the first reference ground 421, the first bonding pad 431, the second bonding pad 432, the third bonding pad 433 and the fourth
  • the bonding pad 438 is provided on the other side of the first reference ground 421 .
  • the laser chip 4026 is usually disposed on the edge of the top of the third substrate 4025.
  • the laser chip 4026 is disposed on the third substrate 4025 close to the first side 420-1, and the input end of the laser chip 4026 is close to the first side 420-1.
  • the wiring length of the line 422 is such that the high-frequency signal line 422 is close to the first side 420-1 and close to the input end of the laser chip 4026.
  • the first pad 431 is close to the first side 420-1 and close to the input end of the laser chip 4026.
  • one end of the high-frequency signal line 422 is close to the first reference ground 421, and the other end extends in the direction of the side connected to the first side 420-1.
  • a branch is also provided on the third substrate 4025.
  • the branch is provided on the side of the high-frequency signal line 422, and the branch is connected to the first reference ground 421, and then the branch and the high-frequency signal line 422 form a transmission line. structure.
  • a first branch 423 is provided on one side of the high-frequency signal line 422 and a second branch 424 is provided on the other side.
  • One end of the first branch 423 and one end of the second branch 424 are electrically connected to the first reference ground 421 respectively.
  • One end of the branch 423 and the second branch 424 extend along the extension direction of the high-frequency signal line 422.
  • the first branch 423, the high-frequency signal line 422 and the second branch 424 form a GSG-type transmission line structure.
  • the high-frequency signal line 422 is close to the first side 420-1, and in order to leave sufficient space for the arrangement of the second branch 424, the high-frequency signal line 422 is arranged obliquely on the third substrate 4025.
  • a fifth preset gap is set between the first branch 423 and the high-frequency signal line 422, and a sixth preset gap is set between the second branch 424 and the high-frequency signal line 422.
  • the fifth preset gap and The sixth preset gap is equal.
  • the width values of the fifth preset gap and the sixth preset gap can be obtained by combining the size of the third substrate 4025 and through simulation calculations.
  • the second soldering pad 432 and the fourth soldering pad 438 are arranged side by side on the other side of the first reference ground 421, and a first preset gap is set between the second soldering pad 432 and the fourth soldering pad 438,
  • the first preset gap is used to prevent the second pad 432 and the fourth pad 438 from being short-circuited when the second pad 432 is connected to the first resistor 434 or when the fourth pad 438 is connected to the second resistor 437;
  • the fourth pad 438 Closer to the first reference ground 421 than the second pad 432, a second preset gap is set between the fourth pad 438 and the first reference ground 421.
  • the second preset gap is used to prevent the fourth pad 438 from connecting to the second ground.
  • the resistor 437 causes a short circuit between the fourth pad 438 and the first reference ground 421 .
  • the third bonding pad 433 includes a first connection area 4331 and a second connection area 4332.
  • the first connection area 4331 is used to electrically connect the capacitor 436, and the second connection area 4332 is used to wire the fourth bonding pad. 438;
  • a third preset gap is set between the first connection area 4331 and the first reference ground 421.
  • the third preset gap is used to prevent the capacitor 436 from electrically connecting the third pad 433 or electrically connecting the first reference ground 421 to cause a third
  • the pad 433 is short-circuited to the first reference ground 421;
  • a fourth preset gap is set between the second connection area 4332 and the first reference ground 421.
  • the fourth preset gap is used to prevent the second connection area 4332 from being connected to the first reference ground. 421 short circuit.
  • the width of the third preset gap is greater than the width of the fourth preset gap.
  • the fourth pad 438 is provided on the third substrate 4025 to facilitate the compatibility of the matching circuit 430. That is, if the same third substrate 4025 is selected, the fourth pad 438 and the fourth pad 438 can be connected by controlling whether to wire.
  • the third pad 433 determines whether to use the second resistor 437 in the matching circuit 430 and so on.
  • a reference ground is usually provided on the bottom of the third substrate 4025; the first reference ground 421 on the top of the third substrate 4025 is electrically connected to the reference ground on the bottom of the third substrate 4025. land.
  • the first reference ground 421 on the top of the third substrate 4025 is electrically connected to the reference ground on the bottom of the third substrate 4025 through a via hole.
  • Figure 27 is a schematic diagram 2 of the structure of a substrate provided according to some embodiments.
  • a second reference ground 425 is provided on the bottom surface of the third substrate 4025 , and the second reference ground 425 is electrically connected to the first reference ground 421 .
  • the second reference ground 425 may cover the surface of the bottom of the third substrate 4025 or partially cover the surface of the bottom of the third substrate 4025 .
  • a metal layer 526 is provided on the first side 420-1, and the metal layer 526 is used to electrically connect the first reference ground 421 and the second reference ground 425.
  • the metal layer 526 covers the entire plane of the first side 420-1, so that the metal layer 526 is disposed on the first side 420-1.
  • the metal layer 526 is typically formed by coating the first side 420-1 with gold.
  • Figure 28 is a structural schematic diagram three of a substrate provided according to some embodiments.
  • the first reference ground 421 extends to the junction between the top surface of the third substrate 4025 and the first side 420 - 1 .
  • the width of the first reference ground 421 on the top surface of the third substrate 4025 is larger near the first side 420-1, so that there is sufficient contact space for the first reference ground 421 to be electrically connected to the metal layer 526.
  • FIG. 29 is an eye diagram provided according to some embodiments.
  • FIG. 29 shows an eye diagram of the laser chip 4026 corresponding to the matching circuit 430 in the laser assembly 4000 using a combination of resistors and capacitors. As shown in Figure 29, the jitter in the eye diagram is large and the eye lines in the eye diagram are thick.
  • Figure 30 is another eye diagram provided according to some embodiments.
  • Figure 30 shows an eye diagram of the laser assembly 4000 shown in Figure 23 corresponding to the laser chip 4026. As shown in Figure 30, the jitter of the eye diagram is reduced and significantly improved. The rising and falling processes of the eye diagram are still a little bit collapsed, slightly affecting the edge of the eye diagram.
  • Figure 31 is yet another eye diagram provided according to some embodiments.
  • Figure 31 shows an eye diagram of the laser assembly 4000 shown in Figure 25 corresponding to the laser chip 4026.
  • the jitter of the eye diagram is significantly improved, and the eye diagram shape is very good. Therefore, in the laser assembly 4000 provided in the embodiment of the present application, by connecting the inductor 435 in series between the first resistor 434 and the capacitor 436 in the matching circuit board 430, the inductor 435 can utilize inductance compensation technology without increasing signal reflection.
  • the low impedance characteristics of the inductor 435 and the compensation capacitor 436 increase the equivalent terminal impedance of the laser chip 4026 and the matching network, so that the impedance of the matching network can be close to the characteristics of transmission lines such as high-frequency signal lines. impedance, thereby reducing channel reflection and improving the laser chip 4026 eye diagram template margin.
  • Figure 32 is a structural diagram of a semiconductor refrigerator according to some embodiments.
  • Figure 33 is an exploded structural view of a semiconductor refrigerator according to some embodiments.
  • Figure 34 is a first angle structural view of the first substrate according to some embodiments.
  • Figure 35 is a second angle structural view of the first substrate according to some embodiments.
  • Figure 36 is a third angle structural view of the first substrate according to some embodiments.
  • Figure 37 is a first angle structural view of the second substrate according to some embodiments.
  • Figure 38 is a second angle structural view of the second substrate according to some embodiments.
  • Figure 39 is a third angle structural view of the second substrate according to some embodiments.
  • the semiconductor refrigerator 4024 includes a first substrate 40241 and a second substrate 40243.
  • the semiconductor refrigerator driving circuit inputs current into the semiconductor column group 40242 of the semiconductor refrigerator 4024 according to the received temperature value of the thermistor 4029, and the semiconductor column group 40242 controls the cooling or heating of the semiconductor refrigerator 4024 according to the input current.
  • the first substrate 40241 includes a support plate 402411 and a heat dissipation plate 402412.
  • the support plate 402411 is fixed to the tube base 4021 On the top surface, the support plate 402411 is connected to the heat dissipation plate 402412.
  • the support plate 402411 and the heat dissipation plate 402412 are arranged at a preset angle.
  • the heat dissipation plate 402412 and one side of the second substrate 40243 are connected through the semiconductor column group 40242.
  • the material of the support plate 402411 is ceramic, and the material of the heat sink 402412 is also ceramic. That is, the support plate 402411 is a ceramic plate, and the heat sink 402412 is a ceramic heat sink. Since ceramics have good thermal conductivity, the support plate 402411 is a ceramic substrate and the heat dissipation plate 402412 is a ceramic heat dissipation plate, then both the support plate 402411 and the heat dissipation plate 402412 have good thermal conductivity.
  • the materials of the support plate 402411 and the heat dissipation plate 402412 may be the same or different.
  • the support plate 402411 and the heat dissipation plate 402412 are made of the same material, the support plate 402411 and the heat dissipation plate 402412 are integrally formed structures, that is, the heat dissipation plate 402412 is formed by extending the support plate 402411 toward the tube cap 4022 and bending it.
  • the support plate 402411 and the heat dissipation plate 402412 are two independent structural parts, and the heat dissipation plate 402412 and the support plate 402411 are welded together.
  • the other surface of the first substrate 40241 and the first surface of the second substrate 40243 are connected through the semiconductor column group 40242. Specifically, one side of the heat dissipation plate 402412 and one side of the second substrate 40243 are connected through the semiconductor column group 40242.
  • a metal layer is provided on the side of the heat sink 402412 connected to the semiconductor column group 40242, and the second substrate 40243 is connected to the semiconductor column group 40242.
  • a metal layer is provided on one side. The temperature of the contact point between the semiconductor column group 40242 and the metal layer on the heat sink 402412 increases, causing the temperature of the heat sink 402412 to rise and dissipate heat to the cavity surrounded by the tube base and the tube cap. The temperature of the contact point between the semiconductor column group 40242 and the metal layer on the second substrate 40243 decreases, causing the temperature of the second substrate 40243 to decrease and absorb heat to the cavity surrounded by the tube base and the tube cap.
  • the second substrate 40243 serves as a cooling plate of the semiconductor refrigerator 4024. Since the third substrate 4025 needs to dissipate heat, the third substrate 4025 is brought into contact with the second substrate 40243 to facilitate cooling of the third substrate 4025.
  • the support plate 402411 includes a ninth connection surface 4024111, a tenth connection surface 4024112, an eleventh connection surface 4024113, a twelfth connection surface, a thirteenth connection surface 4024114 and a fourteenth connection surface 4024115.
  • the ninth connection surface 4024111, the tenth connection surface 4024112, the eleventh connection surface 4024113 and the twelfth connection surface are connected end to end in sequence.
  • the thirteenth connection surface 4024114 and the fourteenth connection surface 4024115 are respectively connected with the ninth connection surface 4024111 and the twelfth connection surface.
  • the tenth connection surface 4024112, the eleventh connection surface 4024113 and the twelfth connection surface are connected, and there is no metal layer provided on the ninth connection surface 4024111.
  • the heat dissipation plate 402412 includes a fifteenth connection surface 4024121, a sixteenth connection surface, a seventeenth connection surface 4024122, an eighteenth connection surface 4024123, a nineteenth connection surface 4024124 and a twentieth connection surface 4024125.
  • the fifteenth connection surface 4024121, the sixteenth connection surface, the seventeenth connection surface 4024122 and the eighteenth connection surface 4024123 are connected end to end in sequence, and the nineteenth connection surface 4024124 and the twentieth connection surface 4024125 are respectively connected with the fifteenth connection surface 4024121, the sixteenth connection surface, the seventeenth connection surface 4024122 and the eighteenth connection surface 4024123 are connected.
  • the ninth connection surface 4024111 of the support plate 402411 is connected to the fifteenth connection surface 4024121 of the heat sink 402412, and the angle between the ninth connection surface 4024111 and the fifteenth connection surface 4024121 is a preset angle, and the heat sink 402412
  • the fifteenth connection surface 4024121 and the second substrate 40243 are connected through the semiconductor column group 40242, the eleventh connection surface 4024113 of the support plate 402411 is in contact with the top surface of the tube base 4021, and the twelfth connection surface of the support plate 402411 is in contact with the heat dissipation
  • the fifteenth connection surface 4024121 of the board 402412 is in contact, the thirteenth connection surface 4024114 of the support plate 402411 and the nineteenth connection surface 4024124 of the heat sink 402412 form an L-shaped connection surface, and the fourteenth connection surface 4024115 of the support plate 402411 It also forms an L-shaped connection surface with the twentieth connection surface 4024125 of the heat sink 402412.
  • a metal layer is provided on the fifteenth connection surface 4024121.
  • the first end of the semiconductor column group 40242 is welded to the metal layer of the fifteenth connection surface 4024121.
  • the positive end of the semiconductor column group 40242 and the negative end of the semiconductor column group 40242 The extreme end is also welded to the metal layer of the fifteenth connection surface 4024121.
  • the twelfth connection surface of the support plate 402411 is the actual connection surface.
  • the twelfth connection surface of the support plate 402411 is a virtual connection surface. That is, the first substrate 40241 includes a ninth connection surface 4024111, a tenth connection surface 4024112, an eleventh connection surface 4024113, a thirteenth connection surface 4024114, a fourteenth connection surface 4024115, a fifteenth connection surface 4024121, a seventeenth connection surface Connection surface 4024122, eighteenth connection surface 4024123, nineteenth connection surface 4024124 and twentieth connection surface 4024125.
  • the ninth connection surface 4024111, the tenth connection surface 4024112, the eleventh connection surface 4024113, the seventeenth connection surface 4024122, the eighteenth connection surface 4024123 and the fifteenth connection surface 4024121 are connected in sequence, and the thirteenth connection surface 4024114
  • the 19th connection surface 4024124 encircles an L-shaped connection surface
  • the 14th connection surface 4024115 and the 20th connection surface 4024125 encircle an L-shaped connection surface. As shown in Figure 34-36.
  • the support plate 402411 and the heat dissipation plate 402412 are arranged at a preset angle. Specifically, since the ninth connection surface 4024111 of the support plate 402411 is connected to the fifteenth connection surface 4024121 of the heat sink 402412, the gap between the ninth connection surface 4024111 of the support plate 402411 and the fifteenth connection surface 4024121 of the heat sink 402412 is The included angle is the preset angle.
  • the preset angle can be acute, right or obtuse.
  • the semiconductor tube group 40242 on the fifteenth connection surface 4024121 of the heat sink 402412 is arranged parallel to the ninth connection surface 4024111 of the support plate 402411, which not only avoids the connection between the semiconductor tube group 40242 and the ninth
  • the contact between the second substrate 40243 and the support plate 402411 is also reduced. Since the first substrate 40241 and the second substrate 40243 are not connected through the semiconductor column group 40242 but are directly connected, it is easy to cause a thermal short circuit, making the semiconductor refrigerator unable to control the temperature normally. Therefore, the first substrate 40241 and the second substrate 40243 can only be connected through the semiconductor column group 40242, but cannot be connected directly.
  • the semiconductor column group 40242 is not only arranged parallel to the ninth connection surface 4024111 of the support plate 402411, but also parallel to the top surface of the tube base 4021.
  • the semiconductor column group 40242 is arranged parallel to the top surface of the tube base 4021, so that the number of semiconductor column groups and the areas of the second substrate and the first substrate are no longer limited by the packaging structure of the light emitting component, thereby improving the efficiency of the semiconductor column group. quantity and the area of the second substrate and the first substrate, thereby improving the temperature control capability of the semiconductor refrigerator.
  • the semiconductor column group 40242 includes a first semiconductor column group, a second semiconductor column group, a third semiconductor column group, ... the Nth semiconductor column group, the first semiconductor column group, the second semiconductor column group, The first ends of the third semiconductor column group and the Nth semiconductor column group are all located on the heat sink 402412 of the first substrate 40241.
  • the first semiconductor column group, the second semiconductor column group, and the third semiconductor column group The second ends of the group,...the Nth semiconductor column group are all located on the second substrate 40243, the first end of the first semiconductor column group serves as the anode end of the semiconductor column group 40242, and the Nth semiconductor column group The two ends are connected to the second end of the second semiconductor column group, the first end of the second semiconductor column group is connected to the first end of the third semiconductor column group, and the second end of the third semiconductor column group is connected to the first end of the third semiconductor column group.
  • the semiconductor refrigerator drive circuit and the semiconductor column group 40242 form a loop.
  • the current emitted by the semiconductor refrigerator drive circuit flows into the semiconductor column group 40242 through the positive terminal of the semiconductor column group 40242, and flows through each of the semiconductor column groups 40242 in turn.
  • the semiconductor column group finally flows out through the negative terminal of the semiconductor column group 40242.
  • the temperature of the contact point between the semiconductor column group 40242 and the metal layer on the heat sink 402412 increases, causing the temperature of the heat sink 402412 to rise and dissipate heat to the cavity surrounded by the tube base and the tube cap.
  • the temperature of the contact point between the semiconductor column group 40242 and the metal layer on the second substrate 40243 decreases, causing the temperature of the second substrate 40243 to decrease and absorb heat to the cavity surrounded by the tube base and the tube cap.
  • the second substrate 40243 includes a twenty-first connection surface 402431, a twenty-second connection surface 402432, a twenty-third connection surface 402433, a twenty-fourth connection surface 402434, a twenty-fifth connection surface 402435, and a twenty-sixth connection surface. Face 402436.
  • the 21st connection surface 402431, the 22nd connection surface 402432, the 23rd connection surface 402433 and the 24th connection surface 402434 are connected end to end, and the 25th connection surface 402435 and the 26th connection surface 402436 They are respectively connected to the twenty-first connection surface 402431, the twenty-second connection surface 402432, the twenty-third connection surface 402433 and the twenty-fourth connection surface 402434.
  • the twenty-first connection surface 402431 of the second substrate 40243 is in contact with the first connection surface 40251 of the third substrate 4025, and a thermistor 4029 is also provided on the twenty-first connection surface 402431 of the second substrate 40243.
  • the twenty-third connection surface 402433 of the second substrate 40243 is connected to the fifteenth connection surface 4024121 of the heat dissipation plate 402412 through the semiconductor column group 40242.
  • the twenty-first connection surface 402431 of the second substrate 40243 is a metal layer, then the twenty-first connection surface 402431 of the second substrate 40243 is connected to the first connection surface 40251 of the third substrate 4025, and the second connection surface 402431 of the second substrate 40243
  • the eleventh connection surface 402431 is connected to the ground wire of the third substrate 4025. Since the second substrate 40243 and the third substrate 4025 are connected through gold wires, the second substrate 40243 is also ground. Since the second substrate 40243 is grounded, the negative terminal of the thermistor 4029 is connected to the twenty-first connection surface 402431 of the second substrate 40243, that is, the negative terminal of the thermistor 4029 is grounded.
  • the heat dissipation plate 402412 and the second substrate 40243 are connected through a semiconductor column group 40242. Specifically, the fifteenth connection surface 4024121 of the heat dissipation plate 402412 and the twenty-third connection surface 402433 of the second substrate 40243 are connected through the semiconductor column group 40242.
  • One side of the third substrate 4025 is in contact with the semiconductor refrigerator 4024. Specifically, one side of the third substrate 4025 is in contact with one side of the second substrate 40243, but not in contact with the first substrate 40241, that is, the twenty-first connection between the first connection surface 40251 of the third substrate 4025 and the second substrate 40243
  • the surface 402431 is in contact, but the second connection surface 40252 of the third substrate 4025 is not in contact with the ninth connection surface 4024111 of the support plate 402411, and the third connection surface 40253 of the third substrate 4025 is in contact with the thirteenth connection surface 4024114 of the support plate 402411. not in contact.
  • a first electrode 4024116, a second electrode 4024117 and a fifth mounting area 4024118 are provided on the ninth connection surface 4024111 of the first substrate 40241.
  • the first electrode 4024116 has a first end connected to the positive end of the semiconductor column group 40242 and a second end connected to the third pin 40233.
  • the first end of the second electrode 4024117 is connected to the negative end of the semiconductor column group 40242, and the second end is connected to the fourth pin 40234.
  • the first electrode 4024116 and the second electrode 4024117 are used to supply power to the semiconductor column group 40242, so that the semiconductor column group 40242 controls the cooling or heating of the TEC4024 according to the input current.
  • the fifth mounting area 4024118 is located between the first electrode 4024116 and the second electrode 4024117, and the fifth mounting area 4024118 is used to place the photodetector 4028.
  • the fifth mounting area 4024118 is not connected to the first electrode 4024116 and the second electrode 4024117.
  • the fifth installation area 4024118 is welded to the top surface of the tube base 4021.
  • the negative terminal of the light detector 4028 is connected to the fifth installation area 4024118.
  • the fifth installation area 4024118 is wired and connected to the top surface of the tube base 4021.
  • the light detector 4028 The positive terminal is connected to the sixth pin 40236. Since the tube base 4021 is ground, the negative terminal of the photodetector 4028 is connected to the fifth installation area 4024118, that is, the negative terminal of the photodetector 4028 is grounded.
  • the support plate 402411 can also dissipate heat, it is mainly used to provide a support surface for the first electrode 4024116, the second electrode 4024117 and the fifth installation area 4024118, and also to provide a support surface for the heat dissipation plate 402412.
  • the first substrate is fixed on the tube base.
  • the first substrate and the second substrate are connected by a semiconductor column group.
  • the ceramic substrate is in contact with the second substrate.
  • the semiconductor column group is arranged vertically to the tube base. Since the semiconductor column group is limited by the packaging structure of the light emitting component, the size of the semiconductor refrigerator is limited, which limits the temperature control capability of the semiconductor refrigerator.
  • the support plate is fixed on the top surface of the tube base, the heat dissipation plate is connected to the support plate, and the heat dissipation plate and the second substrate are connected through the semiconductor column group.
  • the support plate is fixed on the top surface of the tube base, the heat sink plate is connected to the support plate, and the heat sink plate and the second substrate are connected through the semiconductor tube column group, which means that the semiconductor tube column group and the tube base are no longer vertically arranged.
  • the semiconductor column group and the tube base are no longer arranged vertically, so that the number of semiconductor columns included in the semiconductor column group and the areas of the second substrate and the first substrate are no longer limited by the packaging structure of the light emitting component, thereby improving the efficiency of the semiconductor column.
  • the number of semiconductor tube columns and the areas of the second substrate and the first substrate included in the group are further improved to improve the temperature control capability of the semiconductor refrigerator.
  • the light emitting component includes a tube base.
  • a semiconductor refrigerator is provided on the top surface of the tube base.
  • the semiconductor refrigerator includes a second substrate and a first substrate.
  • the first substrate is fixed on the top surface of the tube base.
  • the first substrate includes a support plate and a heat dissipation plate.
  • the support plate is fixed on the top surface of the tube base and is provided with a first electrode and a second electrode.
  • the heat dissipation plate is connected to the support plate, is arranged at a preset angle with the support plate, and is connected to the second substrate through the semiconductor column group.
  • the second substrate is not in contact with the support plate.
  • the second substrate and the first substrate are only connected through the semiconductor column group, thereby avoiding a thermal short circuit caused by direct contact between the first substrate and the second substrate.
  • the first electrode is connected to the positive terminal of the semiconductor column group.
  • the second electrode is connected to the negative terminal of the semiconductor column group.
  • the first electrode and the second electrode provide power to the semiconductor tube column group to cause the semiconductor refrigerator to heat or cool.
  • the support plate is fixed on the top surface of the tube base, and the heat sink plate is connected to the support plate.
  • the support plate and the heat sink plate are set at a preset angle.
  • the second substrate and the heat sink plate are connected through the semiconductor tube column group, which illustrates the connection between the semiconductor tube column group and the tube base.
  • the top surface is no longer set vertically.
  • the semiconductor column group and the top surface of the tube base are no longer vertically arranged, so that the number of conductor columns and the areas of the second substrate and the first substrate are no longer limited by the packaging structure of the light emitting component, improving the efficiency of the semiconductor column group. quantity and the area of the second substrate and the first substrate, thereby improving the temperature control capability of the semiconductor refrigerator.
  • the support plate is fixed on the top surface of the tube base, the heat dissipation plate is connected to the support plate, the support plate and the heat dissipation plate are arranged at a preset angle, and the second substrate and the heat dissipation plate are connected through the semiconductor column group, indicating that the semiconductor column group They are no longer vertically parallel to the top surface of the tube holder, and the semiconductor tube column group and the top surface of the tube holder are no longer vertically arranged, so that the number of semiconductor tube pillar groups and the areas of the second substrate and the first substrate are no longer limited.
  • the packaging structure of the light-emitting component the number of semiconductor column groups and the areas of the second substrate and the first substrate are increased, thereby improving the temperature control capability of the semiconductor refrigerator.
  • the support plate in the optical module provided by this application is also provided with a fifth installation area.
  • the fifth installation area is located between the first electrode and the second electrode and is not connected to the first electrode and the second electrode for placement.
  • the third substrate is not in contact with the support plate and the top surface of the tube holder.
  • the other surface is provided with a laser chip, a first signal line transmission layer and a second signal line transmission layer.
  • the laser chip includes a light-emitting area and an electro-absorption modulation area, which is used to emit data light.
  • the first signal line transmission layer is uninterrupted and wired to the electroabsorption modulation area, and is used to transmit the first high frequency signal, so that the electroabsorption modulation area modulates the light to obtain data light.
  • the second signal line transmission layer is wired and connected to the light-emitting area, and is used to transmit the second high-frequency signal so that the light-emitting area emits light. Since there is only a third substrate on which the first signal line transmission layer is placed on the tube base, and the first signal line transmission layer is uninterrupted, the dielectric constant of the third substrate does not change, and there is no third substrate on the third substrate.
  • the impedance mismatch of the signal line transmission layer increases the impedance continuity, thereby weakening the signal reflection and improving the high-frequency performance of the optical module.
  • a third substrate is provided on the top surface of the tube base for placing the first signal line transmission layer, and the first signal line transmission layer is uninterrupted, thus avoiding the impedance mismatch of the first signal line transmission layer and increasing the impedance. continuity, thereby weakening signal reflection and improving the high-frequency performance of the optical module.

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Abstract

一种光模块，包括管座（4021）。管座（4021）设有半导体制冷器（4024）。半导体制冷器（4024）包括第一基板（40241）、第二基板（40243）。第一基板（40241）包括支撑板（402411）和散热板（402412）。支撑板（402411），固定于管座（4021）的顶面，上设置有第一电极（4024116）、第二电极（4024117）。散热板（402412），与支撑板（402411）连接，与支撑板（402411）呈预设角度设置，与第二基板（40243）通过半导体管柱组连接。第二基板（40243）与支撑板（402411）不接触。支撑板（402411）固定于管座（4021）的顶面，支撑板（402411）与散热板（402412）呈预设角度设置，第二基板（40243）与散热板（402412）通过半导体管柱组连接，说明半导体管柱组与管座（4021）的顶面不再垂直设置，使得半导体管柱组的数量及第二基板（40243）与第一基板（40241）的面积不再受限，提高半导体管柱组的数量及第二基板（40243）与第一基板（40241）的面积，进而提高半导体制冷器（4024）的控温能力。

Description

一种光模块
相关申请的交叉引用
本申请要求在2022年06月14日提交中国专利局、申请号为202210672549.X、申请名称为“一种光模块”的中国专利申请的优先权，其全部内容通过引用结合在本申请中；本申请要求在2022年06月14日提交中国专利局、申请号为202221481644.3、申请名称为“一种光模块”的中国专利申请的优先权，其全部内容通过引用结合在本申请中；本申请要求在2022年06月21日提交中国专利局、申请号为202221563817.6、申请名称为“一种光模块及激光组件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光纤通信技术领域，尤其涉及一种光模块。
背景技术
光模块是实现光电信号相互转换的工具，是光通信设备中的关键器件之一。光模块通常包括光发射部件、光接收部件、微处理器等器件，另外，还有一些光模块中将单独的光发射部件和光接收部件一起封装在金属外壳中制成光收发部件。
基于TO(Through-hole)封装技术相对于其它封装技术，具有寄生参数小、工艺成本低等优点，因此，光收发部件中的光发射部件常会采用同轴TO封装方式。光发射部件通常包括管座和管帽，管座与管帽围城的空腔内设置有陶瓷基板和半导体制冷器。由于半导体管柱组受光发射部件封装结构的限制，导致半导体制冷器的制冷面积有限，使得半导体制冷器的控温能力较弱。
发明内容
本申请提供了一种光模块，包括：
光发射部件，包括管座；管座，顶面设置有半导体制冷器；半导体制冷器，包括第一基板和第二基板；第一基板，包括支撑板和散热板；支撑板，固定于管座的顶面，上设置有第一电极和第二电极；散热板，与支撑板连接，与支撑板呈预设角度设置，与第二基板通过半导体管柱组连接；第二基板，与支撑板不接触；第一电极，与半导体管柱组的正极端连接；第二电极，与半导体管柱组的负极端连接。
附图说明
图1为光通信系统的连接关系图；
图2为光网络终端的结构图；
图3为根据一些实施例的一种光模块结构图；
图4为根据一些实施例的光模块分解结构图；
图5为根据一些实施例的光收发部件的结构示意图；
图6为根据一些实施例的光收发部件的分解图；
图7为根据一些实施例的光发射部件的结构图；
图8为根据一些实施例的除去管帽的光发射部件的结构图；
图9为根据一些实施例的光发射部件的第一角度截面图；
图10为根据一些实施例的光发射部件的第二角度截面图；
图11为根据一些实施例的光发射部件的分解结构图；
图12为根据一些实施例的管座和管脚的结构图；
图13为根据一些实施例的管帽的结构图；
图14为根据一些实施例的除管座、管脚和管帽外的光发射部件的第一角度结构图；
图15为根据一些实施例的除管座、管脚和管帽外的光发射部件的第二角度结构图；
图16根据一些实施例的除管座、管脚和管帽外的光发射部件的第一分解结构图；
图17根据一些实施例的除管座、管脚和管帽外的光发射部件的第二分解结构图；
图18为根据一些实施例的第三基板的第一角度结构图；
图19为根据一些实施例的第三基板的第二角度结构图；
图20为根据一些实施例的第三基板的第三角度结构图；
图21为根据一些实施例提供的一种激光组件的结构示意图；
图22为根据一些实施例提供的一种激光芯片的使用原理图；
图23为根据一些实施例提供的另一种激光组件的结构示意图；
图24为根据一些实施例提供的另一种激光芯片的使用原理图；
图25为根据一些实施例提供的再一种激光组件的结构示意图；
图26为根据一些实施例提供的再一种激光组件的结构示意图一；
图27为根据一些实施例提供的一种基板的结构示意图二；
图28为根据一些实施例提供的一种基板的结构示意图三；
图29为根据一些实施例提供的一种眼图；
图30为根据一些实施例提供的另一种眼图；
图31为根据一些实施例提供的再一种眼图；
图32为根据一些实施例的半导体制冷器的结构图；
图33为根据一些实施例的半导体制冷器的分解结构图；
图34为根据一些实施例的第一基板的第一角度结构图；
图35为根据一些实施例的第一基板的第二角度结构图；
图36为根据一些实施例的第一基板的第三角度结构图；
图37为根据一些实施例的第二基板的第一角度结构图；
图38为根据一些实施例的第二基板的第二角度结构图；
图39为根据一些实施例的第二基板的第三角度结构图。
具体实施方式
光通信系统中，使用光信号携带待传输的信息，并使携带有信息的光信号通过光纤或光波导等信息传输设备传输至计算机等信息处理设备，以完成信息的传输。由于光通过光纤或光波导传输时具有无源传输特性，因此可以实现低成本、低损耗的信息传输。此外，光纤或光波导等信息传输设备传输的信号是光信号，而计算机等信息处理设备能够识别和处理的信号是电信号，因此为了在光纤或光波导等信息传输设备与计算机等信息处理设备之间建立信息连接，需要实现电信号与光信号的相互转换。
光模块在光通信技术领域中实现上述光信号与电信号的相互转换功能。光模块包括光口和电口，光模块通过光口实现与光纤或光波导等信息传输设备的光通信，通过电口实现与光网络终端(例如，光猫)之间的电连接，电连接主要用于供电、I2C信号传输、数据信息传输以及接地等；光网络终端通过网线或无线保真技术(Wi-Fi)将电信号传输给计算机等信息处理设备。
图1为光通信系统的连接关系图。如图1所示，光通信系统包括远端服务器1000、本地信息处理设备2000、光网络终端100、光模块200、光纤101及网线103。
光纤101的一端连接远端服务器1000，另一端通过光模块200与光网络终端100连接。 光纤本身可支持远距离信号传输，例如数千米(6千米至8千米)的信号传输，在此基础上如果使用中继器，则理论上可以实现无限距离传输。因此在通常的光通信系统中，远端服务器1000与光网络终端100之间的距离通常可达到数千米、数十千米或数百千米。
网线103的一端连接本地信息处理设备2000，另一端连接光网络终端100。本地信息处理设备2000可以为以下设备中的任一种或几种：路由器、交换机、计算机、手机、平板电脑、电视机等。
远端服务器1000与光网络终端100之间的物理距离大于本地信息处理设备2000与光网络终端100之间的物理距离。本地信息处理设备2000与远端服务器1000之间的连接由光纤101与网线103完成；而光纤101与网线103之间的连接由光模块200和光网络终端100完成。
光模块200包括光口和电口，光口被配置为接入光纤101，从而使得光模块200与光纤101建立双向的光信号连接；电口被配置为接入光网络终端100中，从而使得光模块200与光网络终端100建立双向的电信号连接。光模块200实现光信号与电信号的相互转换，从而使得光纤101与光网络终端100之间建立信息连接。示例地，来自光纤101的光信号由光模块200转换为电信号后输入至光网络终端100中，来自光网络终端100的电信号由光模块200转换为光信号输入至光纤101中。由于光模块200是实现光信号与电信号相互转换的工具，不具有处理数据的功能，在上述光电转换过程中，信息并未发生变化。
光网络终端100包括大致呈长方体的壳体(housing)，以及设置在壳体上的光模块接口102和网线接口104。光模块接口102被配置为接入光模块200，从而使得光网络终端100与光模块200建立双向的电信号连接；网线接口104被配置为接入网线103，从而使得光网络终端100与网线103建立双向的电信号连接。光模块200与网线103之间通过光网络终端100建立连接。示例地，光网络终端100将来自光模块200的电信号传递给网线103，将来自网线103的电信号传递给光模块200，因此光网络终端100作为光模块200的上位机，可以监控光模块200的工作。光模块200的上位机除光网络终端100之外还可以包括光线路终端(Optical Line Terminal，OLT)等。
远端服务器1000通过光纤101、光模块200、光网络终端100及网线103，与本地信息处理设备2000之间建立了双向的信号传递通道。
图2为光网络终端的结构图，为了清楚地显示光模块200与光网络终端100的连接关系，图2仅示出了光网络终端100的与光模块200相关的结构。如图2所示，光网络终端100还包括设置于壳体内的电路板105，设置在电路板105表面的笼子106，设置在笼子106上的散热器107，以及设置在笼子106内部的电连接器。电连接器被配置为接入光模块200的电口；散热器107具有增大散热面积的翅片等凸起部。
光模块200插入光网络终端100的笼子106中，由笼子106固定光模块200，光模块200产生的热量传导给笼子106，然后通过散热器107进行扩散。光模块200插入笼子106中后，光模块200的电口与笼子106内部的电连接器连接，从而光模块200与光网络终端100建议双向的电信号连接。此外，光模块200的光口与光纤101连接，从而光模块200与光纤101建立双向的光信号连接。
图3为根据一些实施例的一种光模块的结构的两种示意图。图4为根据一些实施例的光模块分解结构的两种示意图。为了便于理解，因此在图3、图4中将相同的部件采用同一标号进行标记；如图3、图4所示，光模块200包括壳体(shell)，设置于壳体内的电路板300及光收发部件400。
壳体包括上壳体201和下壳体202，上壳体201盖合在下壳体202上，以形成具有两个开口的上述壳体；壳体的外轮廓一般呈现方形体。
在本公开的一些实施例中，下壳体202包括底板2021以及位于底板2021两侧、与底板2021垂直设置的两个下侧板2022；上壳体201包括盖板2011，盖板2011盖合在下壳体202的两个下侧板2022上，以形成上述壳体。
在一些实施例中，下壳体202包括底板2021以及位于底板2021两侧、与底板2021垂直设置的两个下侧板2022；上壳体201包括盖板2011以及位于盖板2011两侧、与盖板2011垂直设置的两个上侧板，由两个上侧板与两个下侧板2022结合，以实现上壳体201盖合在下壳体202上。
两个开口204和205的连线所在的方向可以与光模块200的长度方向一致，也可以与光模块200的长度方向不一致。例如，开口204位于光模块200的端部(图3的右端)，开口205也位于光模块200的端部(图3的左端)。或者，开口204位于光模块200的端部，而开口205则位于光模块200的侧部。开口204为电口，电路板300的金手指301从电口204伸出，插入上位机(例如，光网络终端100)中；开口205为光口，被配置为接入外部光纤101，以使外部光纤101连接光模块200内部的光收发部件400。
采用上壳体201、下壳体202结合的装配方式，便于将电路板300、光收发部件400等器件安装到壳体中，由上壳体201、下壳体202对这些器件形成封装保护。此外，在装配电路板300和光收发部件400等器件时，便于这些器件的定位部件、散热部件以及电磁屏蔽部件的部署，有利于自动化地实施生产。
在一些实施例中，上壳体201及下壳体202一般采用金属材料制成，利于实现电磁屏蔽以及散热。
在一些实施例中，光模块200还包括位于其壳体外部的解锁部件203，解锁部件203被配置为实现光模块200与上位机之间的固定连接，或解除光模块200与上位机之间的固定连接。
示例地，解锁部件203位于下壳体202的两个下侧板2022的外壁上，具有与上位机笼子(例如，光网络终端100的笼子106)匹配的卡合部件。当光模块200插入上位机的笼子里，由解锁部件203的卡合部件将光模块200固定在上位机的笼子里；拉动解锁部件203时，解锁部件203的卡合部件随之移动，进而改变卡合部件与上位机的连接关系，以解除光模块200与上位机的卡合关系，从而可以将光模块200从上位机的笼子里抽出。
电路板300包括电路走线、电子元件及芯片，通过电路走线将电子元件和芯片按照电路设计连接在一起，以实现供电、电信号传输及接地等功能。电子元件例如包括电容、电阻、三极管、金属氧化物半导体场效应管(Metal-Oxide-Semiconductor Field-Effect Transistor，MOSFET)。芯片例如包括微控制单元(Microcontroller Unit，MCU)、激光芯片4026、限幅放大器(limiting amplifier)、时钟数据恢复(Clock and Data Recovery，CDR)芯片、电源管理芯片、数字信号处理(Digital Signal Processing，DSP)芯片。
电路板300一般为硬性电路板，硬性电路板由于其相对坚硬的材质，还可以实现承载作用，如硬性电路板可以平稳地承载上述电子元件和芯片；当光收发部件位于电路板上时，硬性电路板也可以提供平稳地承载；硬性电路板还可以插入上位机笼子中的电连接器中。
电路板300还包括形成在其端部表面的金手指，金手指由相互独立的多个引脚组成。电路板300插入笼子106中，由金手指301与笼子106内的电连接器导通连接。金手指可以仅设置在电路板300一侧的表面(例如图4所示的上表面)，也可以设置在电路板300上下两侧的表面，以适应引脚数量需求大的场合。金手指被配置为与上位机建立电连接，以实现供电、接地、I2C信号传递、数据信号传递等。
当然，部分光模块中也会使用柔性电路板。柔性电路板一般与硬性电路板配合使用，以作为硬性电路板的补充。例如，硬性电路板与光收发部件之间可以采用柔性电路板连接。
光收发部件400包括光发射部件402及光接收部件403，光发射部件402被配置为实现光信号的发射，光接收部件403被配置为实现光信号的接收。示例地，光发射部件402及光接收部件403结合在一起，形成一体地光收发部件400。
图5为根据一些实施例的光收发部件400的结构示意图。图6为根据一些实施例的光收发部件400的分解图。如图5以及图6可知，在一些实施例中，光收发部件400包括圆方管体401、光发射部件402、光接收部件403、光学组件404和光纤适配器405。具体的， 圆方管体401，上设置有第一管口、第二管口和第三管口，用于承载固定光发射部件402、光接收部件403、光学组件404和光纤适配器405。具体的，光发射部件402镶嵌于第一管口，光接收部件403镶嵌于第二管口，光学组件404设置于圆方管体401的内腔，光纤适配器405镶嵌于第三管口。
通常，第一管口和第二管口分别设置在圆方管体401上相邻的侧壁上，第一管口和第三管口分别设置在圆方管体401长度方向的侧壁上，第二管口设置在圆方管体401宽度方向的侧壁上。
圆方管体401一般采用金属材料，利于实现电磁屏蔽以及散热。具体的，光发射部件402通过第一管口导热接触圆方管体401，光接收部件403通过第二管口导热接触圆方管体401。光发射部件402和光接收部件403直接压配到圆方管体401中，圆方管体401分别与光发射部件402和光接收部件403直接或通过导热介质接触。如此圆方管体401可用于光发射部件402和光接收部件403的散热，保证光发射部件402和光接收部件403的散热效果。
光发射部件402，与电路板300通过柔性电路板连接，用于发射数据光。
图7为根据一些实施例的光发射部件的结构图，如图7所示，光发射部件402包括管座4021和管帽4022，以及设置在管帽4022和管座4021内的其他器件。管帽4022罩设于管座4021的一端，管帽4022与管座4021围城一个空腔。管座4021上包括若干管脚4023，管脚4023用于实现柔性电路板与光发射部件402内其他电学器件的电连接，进而实现光发射部件402与电路板300的电连接。
图8为根据一些实施例的除去管帽的光发射部件的结构图。图9为根据一些实施例的光发射部件的第一角度截面图。图10为根据一些实施例的光发射部件的第二角度截面图。图11为根据一些实施例的光发射部件的分解结构图。图12为根据一些实施例的管座和管脚的结构图。图13为根据一些实施例的管帽的结构图。
如图7所示，在一些实施例中，管帽4022与管座4021围城的空腔内设置有激光组件4000，激光组件4000用于产生光信号且产生的光信号透过管帽4022。当然在本申请一些实施例中，激光组件4000的使用形式不局限于图7所展示的结构，激光组件4000还可直接贴装设置在电路板206上。
激光芯片4026包括发光区和电吸收调制区，发光区的正极端与电路板上的激光芯片4026连接，发光区的负极端接地，电吸收调制区的正极端与电路板上的激光芯片4026和电源芯片连接，电吸收调制区的负极端接地，发光区根据驱动信号发射不携带数据的光和监控光，电吸收调制区根据调制信号和偏置信号将不携带数据的光调制为数据光。在另一些实施例中，激光组件400的使用形式不局限于图6所展示的结构，激光组件400还可直接贴装设置在电路板206上。激光组件4000的结构不局限于图7所示的结构，还可以为其他结构形式的激光组件；第三基板4025可采用陶瓷基板，但不局限于陶瓷基板。
如图13所示，管帽4022上设置有一通孔40221，该通孔40221上粘接有第一透镜。第一透镜为准直透镜。激光芯片4026发射的数据光经管帽4022上的第一透镜准直后射入圆方管体401内，并经过圆方管体401内的光学组件404汇聚后耦合至光纤适配器405中。其中，调驱动信号、制信号和偏置信号均为高频信号，驱动信号由激光芯片4026提供，调制信号也由激光芯片4026提供，偏置信号由电源芯片提供。
光接收部件403，与电路板300通过柔性电路板连接，内设置有光接收芯片，用于接收数据光。具体的，光接收部件403包括管座和管帽，管帽罩设于管座上，管帽与管座围城一个空腔。管座上设置有光接收芯片和第二透镜。光纤适配器405发射的数据光经光学组件404反射至光接收部件403内的第二透镜，并经第二透镜汇聚到光接收芯片。
光学组件404，设置于圆方管体401的内腔，用于调整光发射部件402发射的数据光以及调整入射至光接收部件403的数据光。
光纤适配器405，用于连接光纤。具体的，光发射部件402镶嵌于圆方管体的第一管 口，光接收部件403镶嵌于圆方管体的第二管口，光纤适配器405镶嵌于圆方管体的第三管口，光发射部件402和光接收部件403分别与光纤适配器405建立光连接。光发射部件402发出的数据光及光接收部件403接收的光均经光纤适配器405中的同一根光纤进行传输，即光纤适配器405中的同一根光纤是光收发部件进出光的传输通道，光收发部件实现单纤双向的光传输模式。
如图8-12所示，光发射部件402包括管脚4023。管脚4023的第一端与电路板300通过柔性电路板连接，管脚4023的第二端伸入管座4021内与管座4021上的各个器件连接。管脚4023包括第一管脚40231、第二管脚40232、第三管脚40233、第四管脚40234、第五管脚40235和第六管脚40236。第一管脚40231通过高频信号线与激光芯片4026的电吸收调制区连接。第二管脚40232通过高频信号线与激光芯片4026的发光区连接。第三管脚40233和第四管脚40234分别与半导体制冷器4024的两个电极连接。第五管脚40235与热敏电阻4029连接。第六管脚40236与光探测器4028连接。
由于第二管脚40232通过高频信号线与激光芯片4026的发光区连接，则第二管脚40232用于传输第二高频信号。由于第一管脚40231通过高频信号线与激光芯片4026的电吸收调制区连接，则第一管脚40231用于传输第一高频信号。
图14为根据一些实施例的除管座、管脚和管帽外的光发射部件的结构图。图15为根据一些实施例的除管座、管脚和管帽外的光发射部件的第二角度结构图。图16根据一些实施例的除管座、管脚和管帽外的光发射部件的第一分解结构图。图17根据一些实施例的除管座、管脚和管帽外的光发射部件的第二分解结构图。如图7-17可知，在一些实施例中，管座4021与管帽4022围城的空腔内除了设置有激光芯片4026外，还设置有半导体制冷器4024、第三基板4025、匹配电容4027、光探测器4028和热敏电阻4029。具体的，半导体制冷器4024，固定于管座4021的顶面，上设置有第三基板4025、光探测器4028和热敏电阻4029，用于调控第三基板4025的温度。
第三基板4025和光探测器4028可通过热沉基板固定于半导体制冷器4024上，也可将第三基板4025和光探测器4028直接固定于半导体制冷器4024上。
在一些实施例中，第三基板4025和光探测器4028直接固定于半导体制冷器4024上，减少了热沉基板的使用，使得半导体制冷器4024可直接给第三基板4025和光探测器4028直接散热，提高第三基板4025和光探测器4028的散热效率。
第三基板4025，与管座4021的顶面不接触，一面与半导体制冷器4024相接触，另一面上设置有激光芯片4026、第一信号线传输层、第二信号线传输层、终端电阻和匹配电容4027。
其中，第三基板4025与半导体制冷器4024相接触，指的是第三基板4025的一面与半导体制冷器4024的第二基板40243相接触，第三基板4025与半导体制冷器4024的第一基板40241不接触。
第三基板4025为陶瓷基板。陶瓷基板为金属化陶瓷，表面铺设高频信号线形成电路图案，可以为激光芯片4026、终端电阻和匹配电容4027供电；同时陶瓷基板具有较佳的导热性能，还可以作为激光芯片4026、终端电阻和匹配电容4027的热沉基板进行散热。
激光芯片4026，通过焊料直接焊接在第三基板4025上，或者通过导电金属层焊接在第三基板4025上，用于发射数据光。
第一信号线传输层，由第一高频信号线铺设而成，用于传输第一高频信号，以使电吸收调制区调制光得到数据光。具体的，第一信号线传输层，第一端与第一管脚40231焊接，第二端与电吸收调制区打线连接。第一管脚40231传输来的第一高频信号经第一信号线传输层的第一高频信号线传输至电吸收调制区。电吸收调制区根据第一高频信号调制不携带数据的光得到数据光。其中，第一高频信号为高频偏置信号和高频调制信号。
第二信号线传输层，由第二高频信号线铺设而成，用于传输第二高频信号，以使发光区发射光。具体的，第二信号线传输层，第一端与第二管脚40232打线连接，第二端与发 光区打线连接。第二管脚40232传输来的第二高频信号经第二信号线传输层的第二高频信号线传输至发光区，发光区根据第二高频信号发射不携带数据的光。其中，第二高频信号包括高频驱动信号。
匹配电容4027，正极端与终端电阻的负极端连接，负极端接地，用于降功耗。其中，终端电阻的正极端与激光芯片4026打线连接，终端电阻用于减少阻抗不连续造成的信号反射。
终端电阻与匹配电容4027串联连接，使得二者与激光芯片4026并联连接。
光探测器4028，位于激光芯片4026的背面，正极端与第六管脚40236连接，负极端固定于半导体制冷器4024上，用于接收激光芯片4026发射的监控光以产生监控电流。光探测器4028的正极端通过第六管脚40236与电路板300上的MCU连接。
热敏电阻4029，正极端与第五管脚40235连接，负极端接地，位于第三基板4025附近，用于采集第三基板4025的工作温度进而实现对第三基板4025工作温度的监测。具体的，通过热敏电阻4029实时采集第三基板4025的温度，并将采集的第三基板4025的温度反馈给半导体制冷器驱动电路，半导体制冷器驱动电路根据接收到的第三基板4025的温度，确定向半导体制冷器4024输入电流，实现对半导体制冷器4024的制热或者制冷，从而可以使得第三基板4025的温度控制在目标温度的范围内。
图18为根据一些实施例的第三基板的第一角度结构图。图19为根据一些实施例的第三基板的第二角度结构图。图20为根据一些实施例的第三基板的第三角度结构图。如图8-20可知，在一些实施例中，第三基板4025包括第一连接面40251、第二连接面40252、第三连接面40253、第四连接面40254、第五连接面40255、第六连接面40256、第七连接面40257和第八连接面40258。第二连接面40252、第三连接面40253和第四连接面40254分别与第一连接面40251及第五连接面40255连接，第五连接面40255、第六连接面40256和第一连接面40251依次连接，第七连接面40257分别与第一连接面40251、第四连接面40254、第五连接面40255及第六连接面40256连接，第八连接面40258分别与第一连接面40251、第二连接面40252、第五连接面40255及第六连接面40256连接。其中，第三基板4025的第二连接面40252和第三基板4025的第三连接面40253组成一个L形第一缺口。
第三基板4025的一面与第二基板40243相接触。具体的，第三基板4025的第一连接面40251与第二基板40243连接，以使第三基板4025的第一连接面40251与第二基板40243相接触。
第三基板4025的另一面上设置有激光芯片4026、第一信号线传输层、第二信号线传输层、终端电阻和匹配电容4027。具体的，第三基板4025的另一面上设置有第一信号传输区域402551、第一安装区域402552、第二安装区域402553、第三安装区域402554、第二信号传输区域402555和第四安装区域402556。
由于第三基板4025为金属化陶瓷基板，表面上可铺设高频信号线形成电路图案，则第三基板4025上的第一信号传输区域402551内铺设有第一高频信号线，形成第一信号线传输层。第一安装区域402552用于放置激光芯片4026。第二安装区域402553和第四安装区域402556用于放置匹配电容4027。第三安装区域402554用于放置终端电阻。第二信号传输区域402555内铺设有第二高频信号线，形成第二信号线传输层。
结合上述描述可知，第三基板4025的另一面上设置有第一信号线传输层、第二信号线传输层、激光芯片4026、匹配电容4027和终端电阻。
其中，第三基板4025的另一面上设置有第一信号传输区域402551、第一安装区域402552、第二安装区域402553、第三安装区域402554和第二信号传输区域402555，指的是第三基板4025的第五连接面40255上设置有第一信号传输区域402551、第一安装区域402552、第二安装区域402553、第三安装区域402554和第二信号传输区域402555。
具体的，激光芯片4026位于第三基板4025的第五连接面40255的第一安装区域402552。 终端电阻，位于第三基板4025的第五连接面40255的第三安装区域402554，正极端与第一信号线传输层的第二端打线连接，负极端与第三安装区域402554连接。匹配电容4027，位于第三基板4025的第五连接面40255的第二安装区域402553和第四安装区域402556，正极端与第二安装区域402553连接，负极端与第四安装区域402556连接。
第三基板4025的第五连接面40255上除第一信号传输区域402551、第二安装区域402553、第三安装区域402554和第二信号传输区域402555之外的所有区域均为地。其中，第二安装区域402553和第三安装区域402554连接，第二安装区域402553和第四安装区域402556不连接。
第一信号线传输层包括第一子信号线传输层、第二子信号线传输层和第三子信号线传输层。第一子信号线传输层，靠近激光芯片4026，与激光芯片4026的电吸收调制区的正极端通过金线打线连接。第二子信号线传输层，位于第一子信号线传输层与第二子信号线传输层之间，与第一子信号线传输层及第三子信号线传输层均不间断。第三子信号线传输层，靠近第一管脚40231，与第一管脚40231焊接。
传统光模块中，陶瓷基板包括第一陶瓷基板和第二陶瓷基板，第一陶瓷基板和第二陶瓷基板通过金线打线连接，第一陶瓷基板上设置有激光芯片、第一高频信号线和第二高频信号线，第二陶瓷基板上设置有第三高频信号线，第一高频信号线和第三高频信号线通过金线打线连接，第一高频信号线和第三高频信号线用于为激光芯片的电吸收调制区提供高频调制信号和高频偏置信号，第二高频信号线用于为激光芯片的发光区提供高频驱动信号。
由于连接第一高频信号线和第三高频信号线的金线不是位于陶瓷介质表面，而是悬空在空气或者真空中，且陶瓷和空气或者真空的介电常数不同，则连接第一高频信号线和第三高频信号线的金线的阻抗与陶瓷基板上的第一高频信号线或者第二高频信号线的阻抗不同，导致高频信号反射增多，光模块的高频性能减弱。为了减少因阻抗不同导致的高频信号反射增多的情况，在一些实施例中，光发射部件内设置一个第三基板4025，第三基板4025上设置有激光芯片、第一高频信号线和第二高频信号线，且第一高频信号线不间断，第一高频信号线用于为激光芯片4026的电吸收调制区提供高频调制信号和高频偏置信号，第二高频信号线用于为激光芯片4026的发光区提供高频驱动信号。
由于第一高频信号线位于第三基板4025的表面，且第一高频信号线不间断，第一高频信号线形成的第一信号线传输层所在的介质并没有发生改变，则第一信号线传输层所在介质的介电常数没有改变，第三基板上的第一信号线传输层也就不存在阻抗不匹配的情况。但如果第一高频信号线是间断的，间断部分通过金线打线连接，且金线悬空于空气或者真空中，则间断部分的金线与第一高频信号线的阻抗不匹配。为了进一步避免阻抗不匹配的情况，第三基板上的第一高频信号线是不间断的。由于第三基板的介电常数没有改变，且第三基板上的第一信号线传输层是不间断的，则第三基板上的第一信号线传输层不存在阻抗不匹配的情况，增加阻抗连续性，进而信号反射减弱，提高光模块的高频性能。
在介绍完本申请实施例提供的光发射部件的主要结构之后，下面对光发射部件中的激光芯片进行详细说明：
如图21所示，激光组件4000包括激光芯片4026和第三基板4025，第三基板4025的上表面铺设有电路，激光芯片4026通过打线连接第三基板4025上相应的电路。激光芯片4026可为EML；第三基板4025以及激光芯片4026和第三基板4025之间的键合线为封装结构，如此EML与第三基板4025封装形成EML激光组件。
由于激光芯片4026中电吸收调制器(Electro Absorption Modulator，EAM)需要加反偏电压，将使激光芯片4026中的EAM处于一个大内阻状态，为了减少EAM跟传输线的阻抗失配，改善反射，在一些实施例中，激光组件4000还包括匹配电路430，匹配电路430与激光芯片4026并联。匹配电路430设置在第三基板4025上；匹配电路430通常包括电阻、电容器件，电阻用于与传输线阻抗匹配，电容用于降低匹配电路中器件的功耗。而当匹配电路430跟传输线的阻抗失配，激光芯片4026的性能并不能达到较优水平，尤 其激光芯片4026中EAM本身的性能稍差时，将使激光芯片4026的眼图噪点比较多，抖动比较大，导致眼图模板余量不足。
为了减少激光芯片4026与传输线的阻抗失配，本申请实施例还提供了一种匹配电路430，匹配电路430中还包括电感，电感串联在电阻和电容之间。图22为根据一些实施例提供的一种激光芯片的使用原理图，图22中展示出了一种匹配电路430的原理电路图。如图22所示，匹配电路430与激光芯片4026并联，匹配电路430包括第一电阻434、电感435和电容436；第一电阻434的一端电连接激光芯片4026的输入端、另一端连接电感435的一端，电感435的另一端连接电容436的一端，电容436的另一端接地。
为了使得本申请实施例提供的匹配电路430的设置以及使用更加简便，本申请实施例还提供了另一种激光组件4000。图23为根据一些实施例提供的另一种激光组件的结构示意图。如图23所示，本申请实施例提供的激光组件4000也包括激光芯片4026和第三基板4025；第三基板4025上设置第一参考地421、高频信号线422和匹配电路430；激光芯片4026贴装设置在第三基板4025上，激光芯片4026的输入端打线连接高频信号线422。在一些实施例中，高频信号线422设置在第一参考地421的一侧，匹配电路430设置在第一参考地421的另一侧，便于控制激光芯片4026的输入端到高频信号线422和匹配电路430的打线长度以及合理布局第三基板4025顶部表面的空间。
匹配电路430包括第一焊盘431、第二焊盘432、第三焊盘433、第一电阻434、电感435和电容436；第一焊盘431、第二焊盘432、第三焊盘433设置在第三基板4025顶部的表面；第一电阻434的一端电连接第一焊盘431、另一端电连接第二焊盘432；电感435的一端电连接第二焊盘432、另一端电连接第三焊盘433；电容436的一端电连接第三焊盘433、另一端电连接第一参考地421；激光芯片4026的输入端打线连接第一焊盘431。进而使激光芯片4026与包括第一电阻434、电感435和电容436的匹配电路430并联。在本申请实施例中，第一电阻434、电感435和电容436的具体值可结合激光芯片4026、通过高频仿真确定。第一电阻434可采用薄膜电阻。
电感在高频下呈高阻抗，会增加通道的反射，进而通常认为电感对高频信号传输来说是有害处的，而本申请实施例中将电感435串联在第一电阻434和电容436之间，使电感435与激光芯片4026并联，奈奎斯特频率S21上制造一个共振，可提高激光芯片40261dB带宽，进而提升眼图的张开度，改善眼图质量。因为从信号频谱能量分布的情况来看，大部分的信号能量分布在奈奎斯特频率以下，所以为了减少信号的衰减，从DC到奈奎斯特频率S21的衰减应该小于1dB。但是对于一条理想的传输线，信号的衰减一定是随着频率的增高而增加的，尤其是激光芯片本身还存在寄生电容和结电容的情况下，信号的衰减会进一步加剧，进而就会导致1dB带宽不够，会造成激光芯片出来的眼图上升沿和下降沿时间较长，眼图闭合。为了改善通道的1dB带宽，本申请实施例提供的匹配电路430，在不增加反射的情况下，利用电感补偿技术可提升通道的1dB带宽。
进一步，影响激光芯片眼图的另一重要因素是反射，其根源是激光芯片4026中EAM的终端阻抗和通道传输线设计的阻抗失配。由于EAM本身是存在寄生电容和结电容，在高频下电容呈低阻抗特性，表现出来的是终端阻抗跟传输线阻抗失配，存在较大的反射，导致芯片出来的眼图噪点很多，眼图模板余量不足。本申请实施例提供的匹配电路430，引入的电感435可以用于补偿电容的低阻抗特性，将EAM芯片和匹配网络的等效终端阻抗提高，尽量接近于传输线的特征阻抗，以减小反射，提高芯片眼图模板余量。
图24为根据一些实施例提供的另一种激光芯片的使用原理图，图24中展示出了一种匹配电路430的原理电路图。如图24所示，在一些实施例中，匹配电路430还包括第二电阻437，第二电阻437的一端电连接激光芯片4026的输入端、另一端连接电容436的一端，进而第二电阻437与第一电阻434和电感435并联以及第二电阻437和电容436串联。
为便于图24中所示匹配电路430的设置以及保证匹配电路430的使用性能，本申请实施例还提供了一种激光组件4000。图25为根据一些实施例提供的再一种激光组件的结 构示意图。如图25所示，图25所示的激光组件4000较图23中所示的激光组件4000增加了第二电阻437，便于进一步提升匹配电路430的性能。示例地，第三基板4025顶部的表面还设置第四焊盘438，第二电阻437的一端电连接第一焊盘431、另一端电连接第四焊盘438。
图26为根据一些实施例提供的一种基板的结构示意图一。如图26所示，第三基板4025的顶部表面设置第一参考地421、高频信号线422、第一焊盘431、第二焊盘432、第三焊盘433和第四焊盘438；第一参考地421沿第三基板4025宽度方向设置，高频信号线422设置在第一参考地421的一侧，第一焊盘431、第二焊盘432、第三焊盘433和第四焊盘438设置在第一参考地421的另一侧。
激光芯片4026通常设置在第三基板4025顶部的边缘。示例地，激光芯片4026设置在第三基板4025上靠近第一侧面420-1的位置，进而激光芯片4026的输入端靠近第一侧面420-1，为了控制激光芯片4026的输入端与高频信号线422的打线长度，高频信号线422靠近第一侧面420-1且靠近激光芯片4026的输入端。进一步，为控制激光芯片4026的输入端与第一焊盘431的打线长度，第一焊盘431靠近第一侧面420-1且靠近激光芯片4026的输入端。
在一些实施中，高频信号线422的一端靠近第一参考地421，另一端向与第一侧面420-1连接的侧面所在方向延伸。为保证高频信号线422的使用，第三基板4025上还设置分支，分支设置在高频信号线422的侧边，且分支连接第一参考地421，进而分支与高频信号线422形成传输线结构。示例地，高频信号线422的一侧设置第一分支423、另一侧设置第二分支424，第一分支423的一端和第二分支424的一端分别电连接第一参考地421，第一分支423的一端和第二分支424沿高频信号线422的延伸方向延伸，第一分支423、高频信号线422与第二分支424形成GSG形式的传输线结构。
在一些实施例中，由于高频信号线422靠近第一侧面420-1，而为了能够给第二分支424的设置留有充足的空间，高频信号线422倾斜设置第三基板4025上。在一些实施例中，第一分支423与高频信号线422之间设置第五预设间隙，第二分支424与高频信号线422之间设置第六预设间隙，第五预设间隙和第六预设间隙相等。第五预设间隙和第六预设间隙的宽度值可结合第三基板4025的尺寸以及通过仿真计算获得。
在一些实施例中，第二焊盘432和第四焊盘438并排设置在第一参考地421的另一侧，第二焊盘432与第四焊盘438之间设置第一预设间隙，第一预设间隙用于防止第二焊盘432连接第一电阻434时或第四焊盘438连接第二电阻437时造成第二焊盘432与第四焊盘438短路；第四焊盘438较第二焊盘432更靠近第一参考地421，第四焊盘438与第一参考地421之间设置第二预设间隙，第二预设间隙用于防止第四焊盘438连接第二电阻437时造成第四焊盘438与第一参考地421短路。
在一些实施例中，第三焊盘433包括第一连接区4331和第二连接区4332，第一连接区4331用于电连接电容436，第二连接区4332用于打线连接第四焊盘438；第一连接区4331与第一参考地421之间设置第三预设间隙，第三预设间隙用于防止电容436电连接第三焊盘433或电连接第一参考地421造成第三焊盘433与第一参考地421短路；第二连接区4332与第一参考地421之间设置第四预设间隙，第四预设间隙用于防止第二连接区4332处与第一参考地421短路。在一些实施例中，考虑电连接电容436的实际需要，第三预设间隙的宽度大于第四预设间隙。
在一些实施例中，第三基板4025上设置第四焊盘438，便于实现匹配电路430的兼容性，即选择了相同的第三基板4025还可以通过控制是否打线连接第四焊盘438和第三焊盘433，实现是否在匹配电路430电路中使用第二电阻437等。
在一些实施例中，为了增加第三基板4025上的接地面积，第三基板4025上的底部通常也设置参考地；第三基板4025顶部的第一参考地421电连接第三基板4025底部的参考地。通常，第三基板4025顶部的第一参考地421通过过孔电连接第三基板4025底部的参 考地。
图27为根据一些实施例提供的一种基板的结构示意图二。如图27所示，第三基板4025底部的表面设置第二参考地425，第二参考地425电连接第一参考地421。在一些实施例中，第二参考地425可布满第三基板4025底部的表面或局部布满第三基板4025底部的表面。
在一些实施例中，第一侧面420-1上设置金属层526，金属层526用于电连接第一参考地421和第二参考地425。通过第一侧面420-1上设置金属层连接第一参考地421和第二参考地425，在工艺上便于实现第一参考地421和第二参考地425的电连接。示例地，金属层526覆盖第一侧面420-1的整个平面，便于在第一侧面420-1上设置金属层526。金属层526通常通过采用金在第一侧面420-1上镀膜形成。
图28为根据一些实施例提供的一种基板的结构示意图三。如图28所示，为便于第一参考地421和第二参考地425通过金属层526电连接，第一参考地421延伸至第三基板4025顶部表面与第一侧面420-1交界处。示例地，第三基板4025顶部表面的第一参考地421在接近第一侧面420-1位置处的宽度较大，以便于第一参考地421与金属层526电连接具有充足的接触空间。
图29为根据一些实施例提供的一种眼图，图29展示出了激光组件4000中匹配电路430采用电阻和电容组合对应的激光芯片4026的一种眼图。如图29所示，眼图的抖动较大且眼图中的眼线较粗。图30为根据一些实施例提供的另一种眼图，图30示出了图23所示激光组件4000对应激光芯片4026的一种眼图。如图30所示，眼图的抖动减小，明显改善，眼图的上升和下降过程还一点点塌，稍微影响眼图的边缘。图31为根据一些实施例提供的再一种眼图，图31示出了图25所示激光组件4000对应激光芯片4026的一种眼图。如图31所示，眼图的抖动明显改善，且眼图形状非常好。因此本申请实施例中提供的激光组件4000中，通过在匹配电路板430中的第一电阻434和电容436之间串联电感435，电感435能够在不增加信号反射的情况下，利用电感补偿技术能够提升激光芯,410的带宽；同时，电感435补偿电容436的低阻抗特性将激光芯片4026和匹配网络的等效终端阻抗提高，使匹配网络的阻抗能够接近于高频信号线等传输线的特征阻抗，进而减少通道反射，提高激光芯片4026眼图模板余量。
在介绍完本申请实施例提供的激光芯片后，下面继续对本申请中提供的半导体制冷器进行详细说明：
图32为根据一些实施例的半导体制冷器的结构图。图33为根据一些实施例的半导体制冷器的分解结构图。图34为根据一些实施例的第一基板的第一角度结构图。图35为根据一些实施例的第一基板的第二角度结构图。图36为根据一些实施例的第一基板的第三角度结构图。图37为根据一些实施例的第二基板的第一角度结构图。图38为根据一些实施例的第二基板的第二角度结构图。图39为根据一些实施例的第二基板的第三角度结构图。如图8-39可知，在一些实施例中，半导体制冷器4024包括第一基板40241和第二基板40243，第一基板40241的一面固定于管座4021的顶面，第一基板40241的另一面与第二基板40243的一面通过半导体管柱组40242连接，第二基板40243的另一面上设置有热敏电阻4029。半导体制冷器驱动电路根据接收到的热敏电阻4029的温度值向半导体制冷器4024的半导体管柱组40242内输入电流，半导体管柱组40242根据输入电流控制半导体制冷器4024的制冷或者制热。
在介绍完半导体制冷器之后，下面对本申请提供的光模块中的第一基板与第二基板进行说明，其中，第一基板40241包括支撑板402411和散热板402412，支撑板402411固定于管座4021的顶面，支撑板402411与散热板402412连接，支撑板402411与散热板402412呈预设角度设置，散热板402412与第二基板40243的一面通过半导体管柱组40242连接。
支撑板402411的材料为陶瓷，散热板402412的材料也为陶瓷。即支撑板402411为陶瓷板，散热板402412为陶瓷散热板。由于陶瓷具有较好的导热性，支撑板402411为陶瓷 基板，散热板402412为陶瓷散热板，那么支撑板402411和散热板402412均具有较好的导热性。
支撑板402411和散热板402412的材料可以是相同的，也可以是不同的。当支撑板402411和散热板402412的材料相同时，支撑板402411和散热板402412为一体成型结构，即散热板402412由支撑板402411延伸向管帽4022方向弯折形成。当支撑板402411和散热板402412的材料不相同时，支撑板402411和散热板402412为两个独立的结构件，散热板402412与支撑板402411焊接连接。
第一基板40241的另一面与第二基板40243的一面通过半导体管柱组40242连接。具体的，散热板402412的一面与第二基板40243的一面通过半导体管柱组40242连接。
由于散热板402412的材料为陶瓷，第二基板40243的材料也为陶瓷，那么散热板402412与半导体管柱组40242连接的一面上设置有金属层，第二基板40243与半导体管柱组40242连接的一面上设置有金属层。半导体管柱组40242与散热板402412上的金属层接触点温度升高，使得散热板402412的温度升高，并向管座与管帽围城的空腔散热。半导体管柱组40242与第二基板40243上的金属层接触点温度降低高，使得第二基板40243的温度降低，并向管座与管帽围城的空腔吸热。由于第二基板40243的温度降低，且向管座与管帽围城的空腔吸热，所以第二基板40243作为半导体制冷器4024的降温板。又由于第三基板4025需要散热，因此，将第三基板4025与第二基板40243相接触，便于对第三基板4025降温。
支撑板402411包括第九连接面4024111、第十连接面4024112、第十一连接面4024113、第十二连接面、第十三连接面4024114和第十四连接面4024115。第九连接面4024111、第十连接面4024112、第十一连接面4024113和第十二连接面依次首尾连接，第十三连接面4024114和第十四连接面4024115分别与第九连接面4024111、第十连接面4024112、第十一连接面4024113和第十二连接面连接，第九连接面4024111上没有设置金属层。
散热板402412包括第十五连接面4024121、第十六连接面、第十七连接面4024122、第十八连接面4024123、第十九连接面4024124和第二十连接面4024125。第十五连接面4024121、第十六连接面、第十七连接面4024122和第十八连接面4024123依次首尾连接，第十九连接面4024124和第二十连接面4024125分别与第十五连接面4024121、第十六连接面、第十七连接面4024122和第十八连接面4024123连接。
其中，支撑板402411的第九连接面4024111与散热板402412的第十五连接面4024121连接，且第九连接面4024111与第十五连接面4024121之间的夹角为预设角度，散热板402412的第十五连接面4024121与第二基板40243通过半导体管柱组40242连接，支撑板402411的第十一连接面4024113与管座4021的顶面相接触，支撑板402411的第十二连接面和散热板402412的第十五连接面4024121相接触，支撑板402411的第十三连接面4024114和散热板402412的第十九连接面4024124组成一个L形连接面，支撑板402411的第十四连接面4024115和散热板402412的第二十连接面4024125也组成一个L形连接面。
第十五连接面4024121上设置有金属层，半导体管柱组40242的第一端焊接于第十五连接面4024121的金属层上，半导体管柱组40242的正极端和半导体管柱组40242的负极端也焊接于第十五连接面4024121的金属层上。
当支撑板402411和散热板402412为两个独立结构，且支撑板402411和散热板402412连接时，支撑板402411的第十二连接面为实际连接面。
当支撑板402411和散热板402412为一体成型结构，且散热板402412由支撑板402411延伸弯折形成，则支撑板402411的第十二连接面为虚拟连接面。即，第一基板40241包括第九连接面4024111、第十连接面4024112、第十一连接面4024113、第十三连接面4024114、第十四连接面4024115、第十五连接面4024121、第十七连接面4024122、第十八连接面4024123、第十九连接面4024124和第二十连接面4024125。其中，第九连接面4024111、 第十连接面4024112、第十一连接面4024113、第十七连接面4024122、第十八连接面4024123和第十五连接面4024121依次连接，第十三连接面4024114和第十九连接面4024124围城一个L形连接面，第十四连接面4024115和第二十连接面4024125围城一个L形连接面。如图34-36所示。
支撑板402411与散热板402412呈预设角度设置。具体的，由于支撑板402411的第九连接面4024111与散热板402412的第十五连接面4024121连接，则支撑板402411的第九连接面4024111与散热板402412的第十五连接面4024121之间的夹角为预设角度。该预设角度可以是锐角、直角和钝角。
当预设角度为直角时，散热板402412的第十五连接面4024121上的半导体管柱组40242与支撑板402411的第九连接面4024111平行设置，不仅避免了半导体管柱组40242与第九连接面4024111接触，也减少了第二基板40243与支撑板402411接触。由于第一基板40241与第二基板40243不通过半导体管柱组40242连接而是直接连接时，容易造成热短路，使得半导体制冷器无法正常控温。因此，第一基板40241与第二基板40243仅能通过半导体管柱组40242连接，而不能直接连接。
当预设角度为直角时，半导体管柱组40242不仅与支撑板402411的第九连接面4024111平行设置，还与管座4021的顶面平行设置。半导体管柱组40242与管座4021的顶面平行设置，使得半导体管柱组的数量及第二基板与第一基板的面积不再受限于光发射部件的封装结构，提高半导体管柱组的数量及第二基板与第一基板的面积，进而提高半导体制冷器的控温能力。
半导体管柱组40242包括第一半导体管柱组、第二半导体管柱组、第三半导体管柱组、……第N半导体管柱组，第一半导体管柱组、第二半导体管柱组、第三半导体管柱组、……第N半导体管柱组的第一端均位于第一基板40241的散热板402412上，第一半导体管柱组、第二半导体管柱组、第三半导体管柱组、……第N半导体管柱组的第二端均位于第二基板40243上，第一半导体管柱组的第一端作为半导体管柱组40242的正极端，第一半导体管柱组的第二端与第二半导体管柱组的第二端连接，第二半导体管柱组的第一端与第三半导体管柱组的第一端连接，第三半导体管柱组的第二端与第四半导体管柱组的第二端连接，第四半导体光柱的第一端与第五半导体管柱组的第一端连接，剩余的半导体管柱组依次串联连接，直至第N-1半导体管柱组的第二端与第N半导体管柱组的第二端连接，第N半导体管柱组的第一端作为半导体管柱组40242的负极端。半导体制冷器驱动电路和半导体管柱组40242组成一个回路，半导体制冷器驱动电路发出的电流经半导体管柱组40242的正极端流入半导体管柱组40242，并依次流经半导体管柱组40242的各个半导体管柱组，最后经半导体管柱组40242的负极端流出。半导体管柱组40242与散热板402412上的金属层接触点温度升高，使得散热板402412的温度升高，并向管座与管帽围城的空腔散热。半导体管柱组40242与第二基板40243上的金属层接触点温度降低高，使得第二基板40243的温度降低，并向管座与管帽围城的空腔吸热。
第二基板40243包括第二十一连接面402431、第二十二连接面402432、第二十三连接面402433、第二十四连接面402434、第二十五连接面402435和第二十六连接面402436。第二十一连接面402431、第二十二连接面402432、第二十三连接面402433和第二十四连接面402434依次首尾连接，第二十五连接面402435和第二十六连接面402436分别与第二十一连接面402431、第二十二连接面402432、第二十三连接面402433及第二十四连接面402434连接。其中，第二基板40243的第二十一连接面402431与第三基板4025的第一连接面40251相接触，第二基板40243的第二十一连接面402431上还设置有热敏电阻4029，第二基板40243的第二十三连接面402433与散热板402412的第十五连接面4024121通过半导体管柱组40242连接。
第二基板40243的第二十一连接面402431为金属层，则第二基板40243的第二十一连接面402431与第三基板4025的第一连接面40251连接，且第二基板40243的第二十一 连接面402431与第三基板4025的地打线连接。由于第二基板40243与第三基板4025通过金线打线连接，则第二基板40243也为地。由于第二基板40243为地，则热敏电阻4029的负极端与第二基板40243的第二十一连接面402431连接，即热敏电阻4029的负极端接地。
散热板402412与第二基板40243之间通过半导体管柱组40242连接。具体的，散热板402412的第十五连接面4024121与第二基板40243的第二十三连接面402433通过半导体管柱组40242连接。
第三基板4025的一面与半导体制冷器4024接触。具体的，第三基板4025的一面与第二基板40243的一面相接触，但不与第一基板40241接触，即第三基板4025的第一连接面40251与第二基板40243的第二十一连接面402431相接触，但第三基板4025的第二连接面40252与支撑板402411的第九连接面4024111不接触，第三基板4025的第三连接面40253与支撑板402411的第十三连接面4024114不接触。
如图8-39所示，在一些实施例中，第一基板40241的第九连接面4024111上设置有第一电极4024116、第二电极4024117和第五安装区域4024118。第一电极4024116，第一端与半导体管柱组40242的正极端连接，第二端与第三管脚40233连接。第二电极4024117，第一端与半导体管柱组40242的负极端连接，第二端与第四管脚40234连接。第一电极4024116和第二电极4024117用于给半导体管柱组40242供电，以使半导体管柱组40242根据输入电流控制TEC4024制冷或者制热。第五安装区域4024118位于第一电极4024116和第二电极4024117之间，第五安装区域4024118用于放置光探测器4028。第五安装区域4024118与第一电极4024116及第二电极4024117均不连接。第五安装区域4024118焊接于管座4021的顶面，光探测器4028的负极端与第五安装区域4024118连接，第五安装区域4024118与管座4021的顶面打线连接，该光探测器4028的正极端与第六管脚40236连接。由于管座4021为地，则光探测器4028的负极端与第五安装区域4024118连接，即光探测器4028的负极端接地。
支撑板402411的第九连接面4024111上如果设置金属层，设置于第九连接面4024111上的第一电极4024116和第二电极4024117可能会发生短路，因此，第九连接面4024111上没有设置金属层。支撑板402411虽然也可以散热，但主要是用于给第一电极4024116、第二电极4024117和第五安装区域4024118提供支撑面，也为散热板402412提供支撑面。
传统光模块中，第一基板固定于管座上，第一基板与第二基板之间由半导体管柱组连接，陶瓷基板与第二基板相接触，半导体管柱组与管座垂直设置。由于半导体管柱组受光发射部件封装结构的限制，导致半导体制冷器的尺寸有限，使得半导体制冷器的控温能力。为了解决这个问题，在一些实施例中，支撑板固定于管座的顶面，散热板与支撑板连接，散热板和第二基板通过半导体管柱组连接。
支撑板固定于管座的顶面，散热板与支撑板连接，散热板和第二基板通过半导体管柱组连接，说明半导体管柱组与管座不再垂直设置。半导体管柱组与管座不再垂直设置，使得半导体管柱组包括的半导体管柱的数量及第二基板与第一基板的面积不再受限于光发射部件的封装结构，提高半导体管柱组包括的半导体管柱的数量及第二基板与第一基板的面积，进而提高半导体制冷器的控温能力。
本申请提供了一种光模块，包括光发射部件。光发射部件包括管座。管座顶面设置有半导体制冷器。半导体制冷器包括第二基板和第一基板。第一基板固定于管座的顶面。第一基板包括支撑板和散热板。支撑板，固定于管座的顶面，上设置有第一电极和第二电极。散热板，与支撑板连接，与支撑板呈预设角度设置，与第二基板通过半导体管柱组连接。第二基板，与支撑板不接触。第二基板与第一基板仅通过半导体管柱组连接，避免了第一基板与第二基板直接接触造成热短路的情况。第一电极与半导体管柱组的正极端连接。第二电极与半导体管柱组的负极端连接。第一电极和第二电极给半导体管柱组供电，以使半导体制冷器制热或者制冷。支撑板固定于管座的顶面，散热板与支撑板连接，支撑板与散 热板呈预设角度设置，第二基板与散热板通过半导体管柱组连接，说明半导体管柱组与管座的顶面不再是垂直设置。半导体管柱组与管座的顶面不再是垂直设置，使得导体管柱的数量及第二基板与第一基板的面积不再受限于光发射部件的封装结构，提高半导体管柱组的数量及第二基板与第一基板的面积，进而提高半导体制冷器的控温能力。本申请中，支撑板固定于管座的顶面，散热板与支撑板连接，支撑板与散热板呈预设角度设置，第二基板与散热板通过半导体管柱组连接，说明半导体管柱组与管座的顶面不再垂直平行设置，而半导体管柱组与管座的顶面不再是垂直设置，使得半导体管柱组的数量及第二基板与第一基板的面积不再受限于光发射部件的封装结构，提高半导体管柱组的数量及第二基板与第一基板的面积，进而提高半导体制冷器的控温能力。
本申请提供的光模块中的支撑板上还设置有第五安装区域，第五安装区域，位于第一电极与第二电极之间，与第一电极及第二电极均不连接，用于放置光探测器。第三基板，与支撑板及管座的顶面均不接触，另一面上设置有激光芯片、第一信号线传输层和第二信号线传输层。激光芯片，包括发光区和电吸收调制区，用于发射数据光。第一信号线传输层，不间断，与电吸收调制区打线连接，用于传输第一高频信号，以使电吸收调制区调制光得到数据光。第二信号线传输层，与发光区打线连接，用于传输第二高频信号，以使发光区发射光。由于在管座上仅设置一个放置第一信号线传输层的第三基板，第一信号线传输层不间断，则第三基板的介电常数没有改变，也就不存在第三基板上的第一信号线传输层阻抗不匹配的情况，增加阻抗连续性，进而信号反射减弱，提高光模块的高频性能。本申请中，管座的顶面仅设置一个放置第一信号线传输层的第三基板，且第一信号线传输层不间断，避免了第一信号线传输层阻抗不匹配的情况，增加阻抗连续性，进而信号反射减弱，提高光模块的高频性能。
最后应说明的是：以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (30)

  1. 一种光模块，包括：
    光发射部件，包括管座，
    所述管座，顶面设置有半导体制冷器；
    所述半导体制冷器，包括第一基板和第二基板；
    所述第一基板，包括支撑板和散热板；
    所述支撑板，固定于所述管座的顶面，上设置有第一电极和第二电极；
    所述散热板，与所述支撑板连接，与所述支撑板呈预设角度设置，与所述第二基板通过半导体管柱组连接；
    所述第二基板，与所述支撑板不接触；
    所述第一电极，与所述半导体管柱组的正极端连接；
    所述第二电极，与所述半导体管柱组的负极端连接。
  2. 根据权利要求1所述的光模块，所述预设角度为直角。
  3. 根据权利要求1所述的光模块，所述支撑板上还设置有第五安装区域；
    所述第五安装区域，位于所述第一电极与所述第二电极之间，与所述第一电极及所述第二电极均不连接，用于放置光探测器。
  4. 根据权利要求3所述的光模块，所述支撑板，为陶瓷支撑板，包括第九连接面、第十连接面、第十一连接面、第十二连接面、第十三连接面和第十四连接面，其中，所述第九连接面、所述第十连接面、所述第十一连接面和所述第十二连接面依次连接；
    所述第九连接面，未设置金属层，上设置有所述第一电极、所述第二电极和所述第五安装区域；
    所述第十一连接面，与所述管座的顶面相接触，与所述第九连接面相对设置；
    所述十三连接面，和所述第十四连接面分别与所述第九连接面、所述第十连接面、所述第十一连接面及所述第十二连接面连接。
  5. 根据权利要求4所述的光模块，所述散热板，为陶瓷散热板，包括第十五连接面、第十六连接面、第十七连接面、第十八连接面、第十九连接面和第二十连接面，其中，所述第十五连接面、所述第十六连接面、所述第十七连接面和所述第十八连接面依次连接；
    所述第十五连接面，设置有金属层，与所述支撑板的第九连接面连接，与所述第二基板通过半导体管柱组连接；
    所述第十六连接面，与所述管座的顶面相接触；
    所述第十九连接面，和第二十连接面分别与所述第十五连接面、所述第十六连接面、所述第十七连接面及所述第十八连接面连接。
  6. 根据权利要求4所述的光模块，所述第二基板，为陶瓷基板，与所述半导体管柱组连接的一面设置有金属层。
  7. 根据权利要求1所述的光模块，所述第二基板上设置有热敏电阻；
    所述热敏电阻，正极端与第五管脚连接，负极端接地。
  8. 根据权利要求1所述的光模块，所述光发射部件还包括第三基板；
    所述第三基板，一面与所述第二基板的一面连接，与所述支撑板及所述管座的顶面均不接触，另一面上设置有激光芯片、第一信号线传输层和第二信号线传输层；
    所述激光芯片，包括发光区和电吸收调制区，用于发射数据光；
    所述第一信号线传输层，不间断，与所述电吸收调制区打线连接，用于传输第一高频信号，以使所述电吸收调制区调制光得到数据光；
    所述第二信号线传输层，与所述发光区打线连接，用于传输第二高频信号，以使所述发光区发射光。
  9. 根据权利要求8所述的光模块，所述第三基板包括第一连接面、第二连接面、第 三连接面、第四连接面、第五连接面、第六连接面、第七连接面和第八连接面；
    所述第一连接面，分别与所述第二连接面、所述第三连接面及所述第四连接面相连接，与所述第二基板相接触；
    所述第二连接面，和所述第三连接面均与所述支撑板相邻，且与所述支撑板不接触；
    所述第四连接面，与所述管座的顶面不接触；
    所述第五连接面，与所述第一连接面相对设置，上设置有所述激光芯片、所述第一信号线传输层和所述第二信号线传输层；
    所述第六连接面，与所述第一连接面及所述第五连接面相连接；
    所述第七连接面，与所述第一连接面、所述第四连接面、所述第五连接面及所述第六连接面相连接；
    所述第八连接面，与所述第一连接面、所述第二连接面、所述第五连接面及所述第六连接面相连接。
  10. 根据权利要求1所述的光模块，还包括：
    圆方管体，设置有第一管口和第二管口，所述光发射部件镶嵌于所述第一管口；
    光接收部件，镶嵌于所述第二管口；
    光学组件，设置于所述圆方管体的内腔，用于调整光发射部件发射的数据光以及调整入射至光接收部件的数据光。
  11. 根据权利要求1所述的光模块，还包括：第五安装区域；
    所述第五安装区域，位于所述第一电极与所述第二电极之间，与所述第一电极及所述第二电极均不连接，用于放置光探测器；
    所述第三基板，与所述支撑板及所述管座的顶面均不接触，另一面上设置有激光芯片、第一信号线传输层和第二信号线传输层；
    所述激光芯片，包括发光区和电吸收调制区，用于发射数据光；
    所述第一信号线传输层，不间断，与所述电吸收调制区打线连接，用于传输第一高频信号，以使所述电吸收调制区调制光得到数据光；
    所述第二信号线传输层，与所述发光区打线连接，用于传输第二高频信号，以使所述发光区发射光。
  12. 根据权利要求11所述的光模块，所述预设角度为直角。
  13. 根据权利要求11所述的光模块，所述第三基板包括：第一连接面、第二连接面、第三连接面、第四连接面、第五连接面、第六连接面、第七连接面和第八连接面；
    所述第一连接面，分别与所述第二连接面、所述第三连接面及所述第四连接面相连接，与所述第二基板相接触；
    所述第二连接面，和所述第三连接面均与所述支撑板相邻，且与所述支撑板不接触；
    所述第四连接面，与所述管座的顶面不接触；
    所述第五连接面，与所述第一连接面相对设置，所述第五连接面上设置有所述激光芯片、所述第一信号线传输层和所述第二信号线传输层；
    所述第六连接面，与所述第一连接面及所述第五连接面相连接；
    所述第七连接面，与所述第一连接面、所述第四连接面、所述第五连接面及所述第六连接面相连接；
    所述第八连接面，与所述第一连接面、所述第二连接面、所述第五连接面及所述第六连接面相连接。
  14. 根据权利要求13所述的光模块，所述支撑板，为陶瓷支撑板，包括：第九连接面、第十连接面、第十一连接面、第十二连接面、第十三连接面和第十四连接面，其中，所述第九连接面、所述第十连接面、所述第十一连接面和所述第十二连接面依次连接；
    所述第九连接面，未设置金属层，与所述第三基板的所述第二连接面不接触，所述第九连接面上设置有所述第一电极、所述第二电极和所述第五安装区域；
    所述第十一连接面，与所述管座的顶面相接触，与所述第九连接面相对设置；
    所述十三连接面，与所述第三基板的所述第三连接面不接触，和所述第十四连接面分别与所述第九连接面、所述第十连接面、所述第十一连接面及所述第十二连接面连接。
  15. 根据权利要求14所述的光模块，所述散热板，为陶瓷散热板，包括：第十五连接面、第十六连接面、第十七连接面、第十八连接面、第十九连接面和第二十连接面，其中，所述第十五连接面、所述第十六连接面、所述第十七连接面和所述第十八连接面依次连接；
    所述第十五连接面，设置有金属层，与所述支撑板的第九连接面连接，与所述第二基板通过半导体管柱组连接；
    所述第十六连接面，与所述管座的顶面相接触；
    所述第十九连接面，和第二十连接面分别与所述第十五连接面、所述第十六连接面、所述第十七连接面及所述第十八连接面连接。
  16. 根据权利要求15所述的光模块，所述第二基板，为陶瓷基板，与所述半导体管柱组连接的一面设置有金属层。
  17. 根据权利要求11所述的光模块，所述第一信号线传输层包括：第一子信号线传输层、第二子信号线传输层和第三子信号线传输层；
    所述第一子信号线传输层，靠近所述激光芯片，与所述激光芯片的电吸收调制区打线连接；
    所述第二子信号线传输层，位于所述第一子信号线传输层与所述第二子信号线传输层之间，与所述第一子信号线传输层及所述第三子信号线传输层均不间断；
    所述第三子信号线传输层，靠近第一管脚，与第一管脚打线连接。
  18. 根据权利要求11所述的光模块，所述第三基板上还设置有终端电阻和匹配电容；
    所述终端电阻，正极端与所述第一信号线传输层打线连接，负极端与所述匹配电容的正极端连接，用于减少阻抗不连续；
    所述匹配电容，负极端接地。
  19. 根据权利要求11所述的光模块，所述第二基板上设置有热敏电阻；
    所述热敏电阻，正极端与第五管脚连接，负极端接地。
  20. 根据权利要求11所述的光模块，还包括：
    圆方管体，设置有第一管口和第二管口，所述光发射器镶嵌于所述第一管口；
    光接收器，镶嵌于所述第二管口；
    光学组件，设置于所述圆方管体的内腔，用于调整光发射器发射的数据光以及调整入射至光接收器的数据光。
  21. 根据权利要求1所述的光模块，还包括：
    电路板；
    光收发部件，电连接所述电路板，所述光收发部件包括光发射部件，所述光发射部件用于接收光信号；
    其中，所述光发射部件包括激光组件，所述激光组件包括：
    基板，顶面上设置第一参考地、高频信号线和匹配电路，所述高频信号线设置在所述第一参考地的一侧，所述匹配电路设置在所述第一参考地的另一侧且所述匹配电路电连接所述第一参考地；
    激光芯片，贴装设置在所述第一参考地上，输入端打线连接所述高频信号线且打线连接所述匹配电路；
    所述匹配电路包括第一焊盘、第二焊盘、第三焊盘、第一电阻、电感和电容；所述激光芯片的输入端打线连接所述第一焊盘，所述第一电阻的一端电连接所述第一焊盘、另一端电连接所述第二焊盘；所述电感的一端电连接所述第二焊盘、另一端电连接所述第三焊盘；所述电容的一端电连接所述第三焊盘、另一端电连接所述第一参考地；所述电感用于 补偿所述电容的低阻抗特性以及用于电感补偿提升所述激光芯片的带宽。
  22. 根据权利要求21所述的光模块，所述匹配电路还包括：第四焊盘和第二电阻，所述第二电阻的一端电连接所述第一焊盘、另一端电连接所述第四焊盘，所述第四焊盘打线连接所述第三焊盘。
  23. 根据权利要求22所述的光模块，所述第四焊盘和所述第二焊盘并排设置在所述第一参考地的另一侧，所述第四焊盘与所述第二焊盘之间设置第一预设间隙，且所述第四焊盘较所述第二焊盘更靠近所述第一参考地，所述第四焊盘与所述第一参考地之间设置第二预设间隙。
  24. 根据权利要求23所述的光模块，所述第三焊盘包括：第一连接区和第二连接区，所述第一连接区电连接所述电容，所述第二连接区打线连接所述第四焊盘；所述第一连接区与所述第一参考地之间设置第三预设间隙，所述第二连接区与所述第一参考地之间设置第四预设间隙，所述第三预设间隙的宽度大于所述第四预设间隙。
  25. 根据权利要求21所述的光模块，所述基板的底面上设置第二参考地，所述第二参考地电连接所述第一参考地。
  26. 根据权利要求25所述的光模块，所述基板靠近所述激光芯片输入端包括第一侧面，所述第一侧面上设置金属层，所述金属层电连接所述第一参考地和第二参考地。
  27. 根据权利要求21所述的光模块，所述高频信号线的一端靠近所述激光芯片的输入端，所述高频信号线向靠近所述第一参考地另一侧的所述基板的侧边延伸；所述第一参考地的另一侧设置第一分支和第二分支，所述第一分支和所述第二分支分别电连接所述第一参考地；所述第一分支设置在所述高频信号线的一侧，所述第二分支设置在所述高频信号线的另一侧。
  28. 根据权利要求27所述的光模块，所述第二分支靠近所述基板的第一侧面，所述第一侧面上设置金属层，所述第二分支电连接所述金属层。
  29. 根据权利要求27所述的光模块，所述第一分支与所述高频信号线之间设置第五预设间隙，所述第二分支与所述高频信号线之间设置第六预设间隙，所述第五预设间隙和所述第六预设间隙相等。
  30. 一种激光组件，包括：
    基板，顶面上设置第一参考地、高频信号线和匹配电路，所述高频信号线设置在所述第一参考地的一侧，所述匹配电路设置在所述第一参考地的另一侧且所述匹配电路电连接所述第一参考地；
    激光芯片，贴装设置在所述第一参考地上，输入端打线连接所述高频信号线且打线连接所述匹配电路；
    所述匹配电路包括第一焊盘、第二焊盘、第三焊盘、第一电阻、电感和电容；所述激光芯片的输入端打线连接所述第一焊盘，所述第一电阻的一端电连接所述第一焊盘、另一端电连接所述第二焊盘；所述电感的一端电连接所述第二焊盘、另一端电连接所述第三焊盘；所述电容的一端电连接所述第三焊盘、另一端电连接所述第一参考地；所述电感用于补偿所述电容的低阻抗特性以及用于电感补偿提升所述激光芯片的带宽。
PCT/CN2022/138132 2022-06-14 2022-12-09 一种光模块 Ceased WO2023240949A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025213701A1 (zh) * 2024-04-12 2025-10-16 青岛海信宽带多媒体技术有限公司 光模块

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353493A (ja) * 2001-05-29 2002-12-06 Mitsubishi Electric Corp 光モジュール
CN1617402A (zh) * 2003-11-14 2005-05-18 三星电子株式会社 晶体管外形罐型光模块
US20050111503A1 (en) * 2003-11-13 2005-05-26 Hitachi Cable, Ltd. Photoelectric conversion module and optical transceiver using the same
CN104734782A (zh) * 2013-12-19 2015-06-24 华为技术有限公司 光发射组件及其组装方法
CN108390255A (zh) * 2018-02-22 2018-08-10 青岛海信宽带多媒体技术有限公司 光学次模块及光模块
US20190237934A1 (en) * 2018-01-31 2019-08-01 Oclaro Japan, Inc. Transmitter optical subassembly and optical module
CN111834884A (zh) * 2019-04-16 2020-10-27 住友电工光电子器件创新株式会社 光调制器载体组装体及光模块
WO2022057866A1 (zh) * 2020-09-17 2022-03-24 青岛海信宽带多媒体技术有限公司 一种光模块
CN217445362U (zh) * 2022-06-21 2022-09-16 青岛海信宽带多媒体技术有限公司 一种光模块及激光组件
CN115079355A (zh) * 2022-06-14 2022-09-20 青岛海信宽带多媒体技术有限公司 一种光模块
CN217521403U (zh) * 2022-06-14 2022-09-30 青岛海信宽带多媒体技术有限公司 一种光模块

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353493A (ja) * 2001-05-29 2002-12-06 Mitsubishi Electric Corp 光モジュール
US20050111503A1 (en) * 2003-11-13 2005-05-26 Hitachi Cable, Ltd. Photoelectric conversion module and optical transceiver using the same
CN1617402A (zh) * 2003-11-14 2005-05-18 三星电子株式会社 晶体管外形罐型光模块
CN104734782A (zh) * 2013-12-19 2015-06-24 华为技术有限公司 光发射组件及其组装方法
US20190237934A1 (en) * 2018-01-31 2019-08-01 Oclaro Japan, Inc. Transmitter optical subassembly and optical module
CN108390255A (zh) * 2018-02-22 2018-08-10 青岛海信宽带多媒体技术有限公司 光学次模块及光模块
CN111834884A (zh) * 2019-04-16 2020-10-27 住友电工光电子器件创新株式会社 光调制器载体组装体及光模块
WO2022057866A1 (zh) * 2020-09-17 2022-03-24 青岛海信宽带多媒体技术有限公司 一种光模块
CN115079355A (zh) * 2022-06-14 2022-09-20 青岛海信宽带多媒体技术有限公司 一种光模块
CN217521403U (zh) * 2022-06-14 2022-09-30 青岛海信宽带多媒体技术有限公司 一种光模块
CN217445362U (zh) * 2022-06-21 2022-09-16 青岛海信宽带多媒体技术有限公司 一种光模块及激光组件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025213701A1 (zh) * 2024-04-12 2025-10-16 青岛海信宽带多媒体技术有限公司 光模块

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