WO2020170433A1 - Display device and method for manufacturing same - Google Patents

Abstract

In a film layer (40) provided on the surface of a resin substrate layer (10) opposite the surface thereof whereon a TFT layer (20) is provided, a central slit (U) is provided at the center portion (Bc) in a folding portion (B) in a second direction (Y), which is perpendicular to a first direction (X) and parallel to the surface of the resin substrate layer (10), and an end slit (Sa) is provided at least at one end (Be) of the folding portion (B) in the second direction (Y). The length (Wu) of the central slit (U) is greater than the length (Ws) of the end slit (Sa) in the first direction (X), or the depth (Hu) of the central slit (U) is greater than the depth (Hs) of the end slit (Sa).

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method thereof.

In recent years, self-luminous organic EL display devices using organic EL (electroluminescence) elements have been attracting attention as display devices replacing liquid crystal display devices. In this organic EL display device, a flexible organic EL display device in which an organic EL element or the like is formed on a flexible resin substrate has been proposed. Here, in the organic EL display device, for example, a frame region is provided around a display region for displaying an image, and there is a demand for a narrow frame to reduce the area occupied by the frame region in plan view. Therefore, in a flexible organic EL display device, for example, it is proposed that the frame area on the terminal portion side in which a plurality of terminals are arranged be bent to narrow the frame.

For example, in Patent Document 1, in a display device including a first substrate and a second substrate that are flexible and face each other, and a bendable portion is defined, the thickness of the first substrate and the second substrate It is described that the core is molded so as to be thin at the bent portion.

JP, 2016-224118, A

By the way, in a flexible organic EL display device having a bendable portion in the frame area, a film is attached to the front surface side that is an inner side at the time of folding, and the portion arranged in the bend portion of the film is processed by laser slit processing or the like. , A structure removed in a slit shape has been proposed. In the organic EL display device having this structure, an inspection is performed to determine whether or not the slit is formed at a predetermined position in order to manage the processed area of the film.

However, in the case of a film that has undergone laser slit processing, the side surface (processing end surface) of the slit may become tapered due to the thermal effect of the laser light, and the peripheral area of the opening edge of the slit may be thermally deformed. In this case, since the processing edge (processing end) of the slit is unclear, it becomes difficult to inspect the processing position of the film, and there is a possibility that the processing position cannot be automatically detected, and there is room for improvement.

The present invention has been made in view of the above points, and an object thereof is to facilitate the inspection of the processing position of the film.

In order to achieve the above object, a display device according to the present invention includes a resin substrate, a TFT layer provided on the resin substrate and having at least one inorganic insulating film laminated on the resin substrate, A plurality of light emitting elements that are provided on the TFT layer and form a display area, a frame area that is provided around the display area, and a terminal section that is provided at an end of the frame area and in which a plurality of terminals are arranged. A bent portion provided so as to extend in one direction between the display region and the terminal portion, a slit of the inorganic insulating film provided in the at least one layer of inorganic insulating film in the bent portion, and In the bent portion, a plurality of connection wirings provided so as to extend in parallel to each other in a first direction intersecting with the slits of the inorganic insulating film, and electrically connected to the plurality of terminals and a plurality of wirings of the display region, respectively. A film layer provided on the surface of the resin substrate opposite to the surface on which the TFT layer is provided, and a film layer provided on the film layer in the bent portion, the film substrate being perpendicular to the first direction and the resin substrate. Is a display device having a central slit and an end slit extending along a second direction parallel to the surface of the end slit, wherein the central slit is provided in the central portion of the bent portion in the second direction, and the end slit is provided. Is provided on at least one end of the bent portion in the second direction, and in the first direction, the length of the central slit is greater than the length of the end slit, or the depth of the central slit. Is larger than the depth of the end slit.

According to the present invention, the film layer provided on the surface of the resin substrate opposite to the surface on which the TFT layer is provided has a first portion which is perpendicular to the first direction and parallel to the surface of the resin substrate at the bent portion. The central slit is provided in the central portion in the two directions, and the end slit is provided in at least one end portion in the second direction, and the length of the central slit is greater than the length of the end slit in the first direction, or Since the depth of the central slit is larger than the depth of the end slit, the processing edge of the end slit becomes clear, and the inspection of the processing position of the film can be facilitated.

FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to the first embodiment of the present invention. FIG. 2 is a plan view showing the detailed configuration of the display area of the organic EL display device according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the display area of the organic EL display device according to the first embodiment of the present invention. FIG. 4 is an equivalent circuit diagram showing a pixel circuit of the organic EL display device according to the first embodiment of the present invention. FIG. 5 is a cross-sectional view showing an organic EL layer forming the organic EL display device according to the first embodiment of the present invention. FIG. 6 is a plan view of a front surface side that is an outer side when the frame region of the organic EL display device according to the first embodiment of the present invention is bent. FIG. 7 is a plan view of the front surface side that is inside when the frame region of the organic EL display device according to the first embodiment of the present invention is bent. FIG. 8 is a cross-sectional view of the bent portion of the frame region of the organic EL display device according to the first embodiment of the present invention taken along the line VIII-VIII in FIG. 7. FIG. 9 is a cross-sectional view of the frame region of the organic EL display device according to the first embodiment of the present invention taken along the line IX-IX in FIG. 7. FIG. 10 is a cross-sectional view of the frame region of the organic EL display device according to the first embodiment of the present invention taken along the line XX in FIG. FIG. 11 is a cross-sectional view of the organic EL display device according to the first embodiment of the present invention in a folded state along the line IX-IX in FIG. 7. FIG. 12 is a plan view of the front surface side that is inside when the frame area of the organic EL display device according to the second embodiment of the present invention is bent, and is a view corresponding to FIG. 7. 13 is a cross-sectional view of the bent portion of the frame region of the organic EL display device according to the second embodiment of the present invention taken along line XIII-XIII in FIG. 12, and is a view corresponding to FIG. 8. FIG. 14 is a cross-sectional view of the frame region of the organic EL display device according to the second embodiment of the present invention taken along line XIV-XIV in FIG. 12, and is a view corresponding to FIG. 10. FIG. 15 is a cross-sectional view of a frame region of a modified example of the organic EL display device according to the second embodiment of the present invention taken along line XIV-XIV in FIG. 12, and is a view corresponding to FIG. 10. FIG. 16 is a plan view of the front surface side that is the inside when the frame region of the organic EL display device according to the third embodiment of the present invention is bent, and is a diagram corresponding to FIG. 7. 17 is a cross-sectional view of the bent portion of the frame region of the organic EL display device according to the third embodiment of the present invention taken along line XVII-XVII in FIG. 16, and is a view corresponding to FIG. 8. FIG. 18 is a cross-sectional view of the bent portion of the frame region of the organic EL display device according to the third embodiment of the present invention taken along the line XVIII-XVIII in FIG. FIG. 19 is a cross-sectional view of the frame region of the organic EL display device according to the third embodiment of the present invention taken along line XIX-XIX in FIG. 16, and is a view corresponding to FIG. 10.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments.

<<First Embodiment>>
1 to 11 show a first embodiment of a display device according to the present invention. In each of the following embodiments, an organic EL display device including an organic EL element is illustrated as a display device including a light emitting element. Here, FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 50a of the present embodiment. Further, FIG. 2 is a plan view showing a detailed configuration of the display area D of the organic EL display device 50a. 3 is a cross-sectional view of the display area D of the organic EL display device 50a. Further, FIG. 4 is an equivalent circuit diagram showing a pixel circuit C that constitutes the organic EL display device 50a. Further, FIG. 5 is a cross-sectional view showing the organic EL layer 23 that constitutes the organic EL display device 50a. Further, FIG. 6 is a plan view of the front surface side that is the outer side when the frame region F on the terminal portion T side of the organic EL display device 50a is bent. In addition, FIG. 7 is a plan view of the front surface side that is inside when the frame region F of the organic EL display device 50a is bent. 8 is a cross-sectional view of the bent portion B of the frame region F of the organic EL display device 50a taken along the line VIII-VIII in FIG. 9 is a cross-sectional view of the frame region F of the organic EL display device 50a taken along the line IX-IX in FIG. 10 is a cross-sectional view of the frame region F of the organic EL display device 50a taken along the line XX in FIG. 11 is a sectional view of the organic EL display device 50a in a bent state taken along the line IX-IX in FIG.

As shown in FIG. 1, the organic EL display device 50a includes, for example, a rectangular display area D for displaying an image, and a frame area F provided around the display area D in a frame shape. There is. In the present embodiment, the rectangular display area D is illustrated, but the rectangular shape may have, for example, a shape in which the sides are arcuate, a shape in which the corners are arcuate, or a part of the sides. A substantially rectangular shape such as a shape with a cutout is also included.

In the display area D, as shown in FIG. 2, a plurality of sub-pixels P are arranged in a matrix. Further, in the display area D, as shown in FIG. 2, for example, a sub-pixel P having a red light-emitting area Lr for displaying red, a sub-pixel P having a green light emitting area Lg for performing green display, And sub-pixels P having a blue light emitting region Lb for displaying blue are provided adjacent to each other. In the display area D, for example, one pixel is configured by three adjacent sub-pixels P having the red light emitting area Lr, the green light emitting area Lg, and the blue light emitting area Lb.

At the right end of the frame area F in FIG. 1, a terminal portion T in which a plurality of terminals 35 are arranged is provided so as to extend in the vertical direction (second direction Y) in the drawing. Here, as shown in FIG. 1, for example, a COF (chip on film) 45 is attached to the terminal portion T via an anisotropic conductive film (ACF). Further, in the frame region F, as shown in FIG. 1, between the display region D and the terminal portion T, the second direction Y extending in the vertical direction in the drawing is 180° (in a U-shape) about the bending axis. A bendable bent portion B (see FIG. 11) is provided parallel to the second direction Y. In the organic EL display device 50, as shown in FIG. 1, a first direction X and a second direction Y which is perpendicular to the first direction X and parallel to the substrate surface of a resin substrate layer 10 described later are defined. ing.

As shown in FIG. 3, the organic EL display device 50a includes a resin substrate layer 10 provided as a resin substrate in a display region D, a thin film transistor (TFT) layer 20 provided on the resin substrate layer 10, On the surface of the organic EL element 25 provided on the TFT layer 20 as a light emitting element forming the display area D and on the surface of the resin substrate layer 10 opposite to the surface on which the TFT layer 20 is provided (lower side in FIG. 3). And a film layer 40 provided.

The resin substrate layer 10 is made of, for example, a polyimide resin or the like.

As shown in FIG. 3, the TFT layer 20 includes a base coat film 11 provided on the resin substrate layer 10, a plurality of first TFTs 9a, a plurality of second TFTs 9b, and a plurality of capacitors 9c provided on the base coat film 11. Each of the first TFTs 9a, each of the second TFTs 9b, and the second flattening film 19 provided on each of the capacitors 9c are provided. The first flattening film 8 is provided in the bent portion B of the frame region F, as described later. Here, in the TFT layer 20, as shown in FIGS. 2 and 4, a plurality of gate lines 14 are provided so as to extend parallel to each other in the lateral direction in the drawings. Further, in the TFT layer 20, as shown in FIGS. 2 and 4, a plurality of source lines 18f are provided so as to extend parallel to each other in the vertical direction in the drawings. Further, in the TFT layer 20, as shown in FIGS. 2 and 4, a plurality of power supply lines 18g are provided so as to extend in parallel to each other in the vertical direction in the drawings. Note that each power supply line 18g is provided adjacent to each source line 18f, as shown in FIG. Further, in the TFT layer 20, as shown in FIG. 4, in each sub-pixel P, the first TFT 9a, the second TFT 9b, and the capacitor 9c are provided as a pixel circuit C. The pixel circuits C are arranged in a matrix corresponding to each sub-pixel P.

The base coat film 11 is composed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride.

As shown in FIG. 4, the first TFT 9a is electrically connected to the corresponding gate line 14 and source line 18f in each sub-pixel P. As shown in FIG. 3, the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a, a first interlayer insulating film 15, a second interlayer insulating film 17, and a semiconductor layer 12a, which are sequentially provided on the base coat film 11. The source electrode 18a and the drain electrode 18b are provided. Here, as shown in FIG. 3, the semiconductor layer 12a is provided in an island shape on the base coat film 11, and has, for example, a channel region, a source region, and a drain region. Further, the gate insulating film 13 is provided so as to cover the semiconductor layer 12a, as shown in FIG. The gate electrode 14a is provided on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12a, as shown in FIG. Further, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14a, as shown in FIG. Further, the source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 so as to be separated from each other, as shown in FIG. Further, the source electrode 18a and the drain electrode 18b are, as shown in FIG. 3, via contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17, The source region and the drain region of the semiconductor layer 12a are electrically connected to each other. Note that the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 are formed of, for example, a single layer film or a laminated film of an inorganic insulating film such as silicon nitride, silicon oxide, or silicon oxynitride. ..

As shown in FIG. 4, the second TFT 9b is electrically connected to the corresponding first TFT 9a and the power supply line 18g in each sub-pixel P. As shown in FIG. 3, the first TFT 9b includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b, a first interlayer insulating film 15, a second interlayer insulating film 17, and a semiconductor layer 12b, which are sequentially provided on the base coat film 11. It has a source electrode 18c and a drain electrode 18d. Here, as shown in FIG. 3, the semiconductor layer 12b is provided in an island shape on the base coat film 11, and has, for example, a channel region, a source region, and a drain region. Further, the gate insulating film 13 is provided so as to cover the semiconductor layer 12b, as shown in FIG. The gate electrode 14b is provided on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12b, as shown in FIG. Further, the first interlayer insulating film 15 and the second interlayer insulating film 17 are sequentially provided so as to cover the gate electrode 14b, as shown in FIG. Further, the source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 so as to be separated from each other, as shown in FIG. Further, the source electrode 18c and the drain electrode 18d are, as shown in FIG. 3, via contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17, The semiconductor layer 12b is electrically connected to the source region and the drain region, respectively.

Although the top gate type first TFT 9a and the second TFT 9b are illustrated in the present embodiment, the first TFT 9a and the second TFT 9b may be bottom gate type TFTs.

As shown in FIG. 4, the capacitor 9c is electrically connected to the corresponding first TFT 9a and the power supply line 18g in each sub-pixel P. Here, as shown in FIG. 3, the capacitor 9c includes a lower conductive layer 14c formed of the same material as the gate electrodes 14a and 14b in the same layer, and a first interlayer insulating layer provided so as to cover the lower conductive layer 14c. The film 15 and the upper conductive layer 16 provided on the first interlayer insulating film 15 to overlap the lower conductive layer 14c are provided. The upper conductive layer 16 is electrically connected to the power supply line 18g through a contact hole formed in the second interlayer insulating film 17, as shown in FIG.

The second flattening film 19 has a flat surface in the display region D and is made of, for example, an organic resin material such as a polyimide resin.

As shown in FIG. 3, the organic EL element 25 includes a plurality of first electrodes 21, an edge cover 22, a plurality of organic EL layers 23, and a second electrode 24 which are sequentially provided on the second flattening film 19. Equipped with. The organic EL element 25 is covered with a sealing film 29 as shown in FIG.

As shown in FIG. 3, the first electrodes 21 are provided in a matrix on the second flattening film 19 so as to correspond to the plurality of sub-pixels P. Further, as shown in FIG. 3, each first electrode 21 is electrically connected to the drain electrode 18d (or source electrode 18c) of each second TFT 9b through a contact hole formed in the second planarization film 19. Has been done. The first electrode 21 also has a function of injecting holes into the organic EL layer 23. Further, the first electrode 21 is more preferably formed of a material having a large work function in order to improve the efficiency of injecting holes into the organic EL layer 23. Here, as a material forming the first electrode 21, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au). , Titanium (Ti), ruthenium (Ru), manganese (Mn), indium (In), ytterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium ( Metal materials such as Ir) and tin (Sn) can be cited. The material forming the first electrode 21 may be an alloy such as astatine (At)/oxidized astatine (AtO ₂ ). Further, the material forming the first electrode 21 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). It may be. The first electrode 21 may be formed by stacking a plurality of layers made of the above materials. Examples of the compound material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO).

As shown in FIG. 3, the edge cover 22 is provided in a grid pattern over the entire display area D so as to cover the peripheral portion of each first electrode 21. Examples of the material forming the edge cover 22 include positive photosensitive resins such as polyimide resin, acrylic resin, polysiloxane resin, and novolac resin. Further, as shown in FIG. 3, a part of the surface of the edge cover 22 protrudes upward in the drawing to form an island-shaped pixel photo spacer.

As shown in FIG. 3, the plurality of organic EL layers 23 are arranged on each first electrode 21 and arranged in a matrix so as to correspond to the plurality of sub-pixels P. Here, as shown in FIG. 5, each organic EL layer 23 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer, which are sequentially provided on the first electrode 21. It comprises a layer 5.

The hole injection layer 1 is also called an anode buffer layer and has a function of bringing the energy levels of the first electrode 21 and the organic EL layer 23 close to each other and improving the hole injection efficiency from the first electrode 21 to the organic EL layer 23. Have Here, as the material forming the hole injection layer 1, for example, triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane derivative, pyrazoline derivative, phenylenediamine derivative, oxazole derivative, styrylanthracene derivative, fluorenone derivative, Examples thereof include hydrazone derivatives and stilbene derivatives.

The hole transport layer 2 has a function of improving the efficiency of transporting holes from the first electrode 21 to the organic EL layer 23. Here, examples of the material forming the hole transport layer 2 include porphyrin derivatives, aromatic tertiary amine compounds, styrylamine derivatives, polyvinylcarbazole, poly-p-phenylenevinylene, polysilane, triazole derivatives, and oxadiazole. Derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, hydrogenated amorphous silicon, Examples thereof include hydrogenated amorphous silicon carbide, zinc sulfide, zinc selenide and the like.

In the light emitting layer 3, when the voltage is applied by the first electrode 21 and the second electrode 24, holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and the holes and electrons are recombined. Area. Here, the light emitting layer 3 is formed of a material having high luminous efficiency. Examples of the material forming the light emitting layer 3 include metal oxinoid compound [8-hydroxyquinoline metal complex], naphthalene derivative, anthracene derivative, diphenylethylene derivative, vinylacetone derivative, triphenylamine derivative, butadiene derivative, coumarin derivative. , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, trisstyrylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylene, polysilane and the like can be mentioned.

The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3. Here, examples of the material forming the electron transport layer 4 include organic compounds such as oxadiazole derivatives, triazole derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthraquinone derivatives, tetracyanoanthraquinodimethane derivatives, diphenoquinone derivatives, and fluorenone derivatives. , Silole derivatives, metal oxinoid compounds and the like.

The electron injection layer 5 has a function of bringing the energy levels of the second electrode 24 and the organic EL layer 23 close to each other and improving the efficiency of injecting electrons from the second electrode 24 into the organic EL layer 23. With this function, The drive voltage of the organic EL element 25 can be lowered. The electron injection layer 5 is also called a cathode buffer layer. Here, as a material forming the electron injection layer 5, for example, lithium fluoride (LiF), magnesium fluoride (MgF ₂ ), calcium fluoride (CaF ₂ ), strontium fluoride (SrF ₂ ), barium fluoride. Examples thereof include inorganic alkali compounds such as (BaF ₂ ), aluminum oxide (Al ₂ O ₃ ), strontium oxide (SrO), and the like.

As shown in FIG. 3, the second electrode 24 is provided so as to cover each organic EL layer 23 and the edge cover 22. The second electrode 24 also has a function of injecting electrons into the organic EL layer 23. Further, the second electrode 24 is more preferably made of a material having a small work function in order to improve the efficiency of injecting electrons into the organic EL layer 23. Here, as a material forming the second electrode 24, for example, silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au). , Calcium (Ca), titanium (Ti), yttrium (Y), sodium (Na), ruthenium (Ru), manganese (Mn), indium (In), magnesium (Mg), lithium (Li), ytterbium (Yb). , Lithium fluoride (LiF), and the like. The second electrode 24 is, for example, magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), sodium (Na)/potassium (K), astatine (At)/oxidized astatine (AtO _{2 ).} ), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), lithium fluoride (LiF)/calcium (Ca)/aluminum (Al), and the like. May be. The second electrode 24 may be formed of a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO). .. The second electrode 24 may be formed by stacking a plurality of layers made of the above materials. Examples of the material having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg)/copper (Cu), magnesium (Mg)/silver (Ag), and sodium. (Na)/potassium (K), lithium (Li)/aluminum (Al), lithium (Li)/calcium (Ca)/aluminum (Al), lithium fluoride (LiF)/calcium (Ca)/aluminum (Al) Etc.

As shown in FIG. 3, the sealing film 29 includes a first sealing inorganic insulating film 26 provided so as to cover the second electrode 24, and a sealing organic film provided on the first sealing inorganic insulating film 26. The film 27 and the second sealing inorganic insulating film 28 provided so as to cover the sealing organic film 27 are provided, and have a function of protecting the organic EL layer 23 from moisture, oxygen and the like. Here, the first sealing inorganic insulating film 26 and the second sealing inorganic insulating film 28 are, for example, silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and trisilicon tetranitride (Si ₃ N ₄ ). And an inorganic material such as silicon nitride (SiNx (x is a positive number)), silicon carbonitride (SiCN), or the like. The sealing organic film 27 is made of an organic material such as an acrylic resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.

As shown in FIG. 3, the film layer 40 has, for example, an OCA (optical clear adhesive) 41 provided as an adhesive layer on the surface of the resin substrate layer 10 opposite to the surface on which the TFT layer 20 is provided. Pasted through. The film layer 40 is arranged in the entire display region D and frame region F. The film layer 40 is made of, for example, a plastic film made of polyethylene terephthalate (PET) resin or the like.

Further, in the organic EL display device 50a, as shown in FIGS. 6 to 11, in the frame region F, the resin substrate layer 10, the inorganic laminated film 30 provided on the surface of the resin substrate layer 10, and the first planarization. The film 8, the connection wiring 18h, the second flattening film 19, and the surface of the resin substrate layer 10 opposite to the surface on which the TFT layer 20 is provided (the surface on the outside when bent) (the inside on the bending). And a film layer 40 provided on the surface). Further, the TFT layer 20 in the frame region F is provided with an alignment mark M as shown in FIG.

The inorganic laminated film 30 is at least one layer of an inorganic insulating film that constitutes the TFT layer 20. As shown in FIGS. 8 to 11, the inorganic laminated film 30 includes a base coat film 11 (first inorganic insulating film) as a moisture-proof film and a gate insulating film 13 (second inorganic film), which are sequentially laminated on the resin substrate layer 10. An inorganic insulating film), a first interlayer insulating film 15 (third inorganic insulating film), and a second interlayer insulating film 17 (fourth inorganic insulating film). That is, the inorganic laminated film 30 is composed of four layers of inorganic insulating films. Here, in the inorganic laminated film 30, as shown in FIGS. 6 and 9 to 11, in the bent portion B of the frame region F, a slit that penetrates the inorganic laminated film 30 and exposes the surface of the resin substrate layer 10. V is formed. As shown in FIGS. 9 to 11, the slit V is formed by penetrating the inorganic laminated film 30 in its thickness direction (third direction Z).

As shown in FIG. 6, the slit V of the inorganic laminated film 30 is provided in a groove shape that penetrates along the direction in which the bent portion B extends (second direction Y). Further, as shown in FIG. 6, the slit V extends to both ends of the frame region F in the second direction Y and is formed in a band shape in a plan view. Thereby, when the frame region F is bent at the bent portion B, the stress applied to the inorganic laminated film 30 is reduced. As a result, the damage of the inorganic laminated film 30 and the disconnection of the connection wiring 18h due to the bending of the frame region F are suppressed.

The first flattening film 8 is provided in a band shape in a plan view so as to fill the slit V, as shown in FIGS. 6 and 8 to 11. The first flattening film 8 is made of, for example, an organic resin material such as polyimide resin.

As shown in FIGS. 9 and 11, a plurality of connection wirings 18h are provided on both edges of the second interlayer insulating film 17 in which the slit V is formed and on the first flattening film 8. Further, each connection wiring 18h extends in parallel to each other in the first direction X so as to intersect with the slit V, as shown in FIG. Here, the connection wiring 18h is formed of the same material in the same layer as the source electrode 18a and the like. Further, as shown in FIGS. 9 and 11, the end portion of the connection wiring 18h on the display region D side is provided with a contact hole formed in the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17 through the contact hole. It is electrically connected to the first gate conductive layer 14c. As shown in FIGS. 9 and 11, the first gate conductive layer 14c is provided between the gate insulating film 13 and the first interlayer insulating film 15, and the signal wiring (gate line) of the TFT layer 20 in the display region D (gate line). 14, source line 18f, power supply line 18g, etc.). Further, as shown in FIGS. 9 and 11, the end portion of the connection wiring 18h on the terminal portion T side is provided with a contact hole formed in the laminated film of the first interlayer insulating film 15 and the second interlayer insulating film 17 through a contact hole. It is electrically connected to the second gate conductive layer 14d. The second gate conductive layer 14d is provided between the gate insulating film 13 and the first interlayer insulating film 15 and extends to the terminal portion T, as shown in FIGS. 9 and 11. The second gate conductive layer 14d is electrically connected to each terminal 35 of the terminal portion T, as shown in FIG. In this way, each signal wiring of the TFT layer 20 in the display region D and each terminal 35 of the terminal portion T are electrically connected via the connection wiring 18h.

As shown in FIGS. 6 and 8 to 11, the second flattening film 19 is provided so as to cover each connection wiring 18h, the second interlayer insulating film 17, and the first flattening film 8.

Here, in the organic EL display device 50a, as shown in FIGS. 7 to 11, the film layer 40 in the bent portion B of the frame region F has a central slit U and an end slit Sa. In the plan view of FIG. 7, the resin substrate layer 10 and the inorganic laminated film 30 are omitted. As shown in FIGS. 8 to 11, the central slit U and the end slit Sa are formed by penetrating the film layer 40 in the thickness direction (third direction Z) thereof.

As shown in FIG. 7, the central slit U and the end slit Sa are provided in a groove shape that penetrates along the extending direction of the bent portion B. That is, as shown in FIGS. 6 and 7, the central slit U, the end slits Sa, and the slit V are arranged in parallel with each other along the second direction Y. This makes it possible to reduce the stress applied to the film layer 40 at the bent portion B when the frame area F is bent at the bent portion B, and thus damage or connection of the inorganic laminated film 30 due to the bending of the frame area F. The disconnection of the wiring 18h is further suppressed.

The central slit U is provided in the central portion Bc of the bent portion B in the second direction Y, as shown in FIG. 7. In addition, as shown in FIG. 7, a connection wiring 18h is arranged in the central portion Bc.

On the other hand, the end slits Sa are provided at both ends Be of the bent portion B in the second direction Y, as shown in FIG. 7. Note that, as shown in FIG. 7, the connection wiring 18h is not arranged at the both ends Be.

Further, as shown in FIG. 7, the end slit Sa is a slit that branches from both ends of the central slit U in the first direction X and extends in the second direction Y. In other words, the pair of end slits Sa extend from both ends of the central slit U in the first direction X in the second direction Y, respectively. Then, as shown in FIGS. 7 and 10, the remaining layer 40a of the film layer 40 is disposed between the pair of end slits Sa.

Further, as shown in the enlarged view of FIG. 7, in the first direction X, the length of the central slit U (the length of the opening edge portion of the central slit U) Wu is the length of the end slit Sa (the length of the end slit Sa). It is larger than the length of the opening edge portion) Ws. More specifically, as shown in FIG. 7, in plan view, the central slit U is formed in a strip shape extending along the second direction Y, and the end slit Sa is a linear shape extending along the second direction Y. Is formed in. As described above, the end slit Sa having the length Ws is a slit extended from both ends of the central slit U having the length Wu in the first direction X, and thus the processed edge of the end slit Sa becomes clear.

The length Wu of the central slit U may be determined according to the type of the film layer 40, but is about 2 mm, for example. The length Ws of the end slit Sa may be determined according to the irradiation pitch of the laser light described later, but is, for example, about 0.1 mm.

Further, the end slits Sa are extended to both ends of the bent portion B in the second direction Y, as shown in FIG. 7. The length Ls (see FIG. 7) of the end slit Sa in the second direction Y reduces the stress applied to the remaining layer 40a of the film layer 40 at the bent portion B when the frame region F is bent at the bent portion B. From the viewpoint of doing, for example, it is 1 mm or less.

Further, the depth of the central slit U (the length from the opening edge portion of the central slit U in the third direction Z to the bottom portion (front end portion of processing)) Hu (see FIGS. 8 and 9) is the depth of the end slit Sa. Is equal to Hs (see FIG. 10). More specifically, as shown in FIGS. 8 to 11, the central slit U and the end slit Sa are formed so as to penetrate the film layer 40 and expose the surface of the OCA 41. That is, as shown in FIGS. 7 to 11, the film layer 40 is removed in the central slit U and the end slit Sa.

The alignment mark M is for forming the central slit U and the end slit Sa in the film layer 40 in the film layer slit forming step described later, and for measuring the position with the end slit Sa in the film layer slit inspection step described later. It is a thing. The alignment mark M is, for example, a mark that can be detected by an inspection camera or the like. Further, as shown in FIG. 6, the alignment marks M are provided at the ends (four corners) around the bent portion B of the frame region F. The alignment mark M is formed of the same material in the same layer as the source electrode 18a and the like, for example.

In the organic EL display device 50a described above, in each sub-pixel P, the gate signal is input to the first TFT 9a via the gate line 14 to turn on the first TFT 9a, and the gate electrode of the second TFT 9b via the source line 18f. By writing a data signal to the capacitor 14b and the capacitor 9c, and supplying a current from the power supply line 18g according to the gate voltage of the second TFT 9b to the organic EL layer 23, the light emitting layer 3 of the organic EL layer 23 emits light and an image is displayed. Is configured to display. In the organic EL display device 50a, even when the first TFT 9a is turned off, the gate voltage of the second TFT 9b is held by the capacitor 9c, so that the light emitting layer 3 does not emit light until the gate signal of the next frame is input. Maintained.

Next, a method of manufacturing the organic EL display device 50a of this embodiment will be described. The method for manufacturing the organic EL display device 50a according to the present embodiment includes a resin substrate layer forming step, a TFT layer forming step, an organic EL element forming step, a film sticking step, a film layer slit forming step, and a film layer slit inspection. And a process.

<Resin substrate layer forming step>
For example, a resin substrate layer 10 is formed by applying a non-photosensitive polyimide resin on a supporting substrate (not shown) such as a glass substrate, and then pre-baking and post-baking the applied film.

<TFT layer forming step>
A base coat film 11, a first TFT 9a, a second TFT 9b, a capacitor 9c, and a second flattening film 19 are formed on the resin substrate layer 10 formed in the resin substrate layer forming step by a known method, for example. The TFT layer 20 is formed. Here, when forming the first TFT 9a and the second TFT 9b, first, before forming the source electrode 18a and the like, in the bent portion B of the frame region F, the slit V is formed in the inorganic laminated film 30 by dry etching. Subsequently, after forming the first flattening film 8 so as to fill the slit V, the connection wiring 18h and the alignment mark M are formed simultaneously with the source electrode 18a and the like.

<Organic EL element forming process>
On the second flattening film 19 of the TFT layer 20 formed in the above-mentioned TFT layer forming step, the first electrode 21, the edge cover 22, the organic EL layer 23 (the hole injecting layer 1, the positive electrode, the positive hole, the positive hole, the positive hole, the positive hole injection layer 1, and the positive electrode The hole transport layer 2, the light emitting layer 3, the electron transport layer 4, the electron injection layer 5) and the second electrode 24 are formed to form the organic EL element 25. A sealing film forming step, which will be described later, may be provided after the organic EL element forming step.

<Sealing film forming step>
First, by using a mask, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is plasma-coated on the surface of the substrate on which the organic EL element 25 formed in the organic EL element forming step is formed. The film is formed by the CVD method to form the first sealing inorganic insulating film 26. Subsequently, an organic resin material such as an acrylic resin is deposited on the first sealing inorganic insulating film 26 by, for example, an inkjet method to form the sealing organic film 27. After that, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by a plasma CVD method using a mask so as to cover the organic sealing film 27, and the second sealing is performed. The sealing film 29 is formed by forming the inorganic insulating film 28.

<Film pasting process>
First, by irradiating the resin substrate layer 10 with laser light from the supporting substrate side after the resin substrate layer forming step, from the surface of the resin substrate layer 10 opposite to the surface on which the TFT layer 20 is provided. The supporting substrate is peeled off. Subsequently, the film layer 40 is attached to the surface of the resin substrate layer 10 from which the support substrate has been peeled off, via the OCA 41.

<Film layer slit forming process>
In the portion of the film layer 40 attached in the film attaching step, which is arranged in the bent portion B, by using the alignment mark M, for example, irradiating CO ₂ laser light or the like, the central slit U and the edge. The slit Sa is formed. The pitch for irradiating the laser beam is not particularly limited, but is, for example, about 0.1 mm.

The central slit U is formed as follows, for example. By irradiating the film layer 40 arranged in the central portion Bc of the bent portion B with laser light having a predetermined irradiation intensity along the second direction Y and performing laser slit processing, a linear shape is obtained in a plan view. To form the slit. Subsequently, this laser slit processing is performed a plurality of times along the first direction X at a predetermined pitch to remove almost all of the film layer 40, thereby forming a band-shaped central slit U in plan view. You can The irradiation intensity of the laser beam when forming the central slit U is such that the film layer 40 is removed and the surface of the OCA 41 is exposed, but the irradiation intensity does not penetrate the OCA 41 (hereinafter also referred to as “normal irradiation intensity”). Is.

The side surface (processing end surface) of the central slit U formed as described above is tapered in cross section due to the thermal effect of the laser light, as shown in FIGS. 8 and 9. Further, the peripheral region Ru (see FIG. 8 and FIG. 9) at the opening edge portion of the central slit U may be thermally deformed due to the thermal effect of the laser light, for example, undulating heat. Further, as shown in FIG. 8, the bottom portion of the central slit U (the portion where the surface of the OCA 41 is exposed) has a planar shape in which the tip portions of a plurality of processing lines overlap with each other and which has minute irregularities in a cross-sectional view. .. In this way, the processing edge of the opening and the bottom of the central slit U are unclear.

On the other hand, the end slit Sa is formed as follows, for example. When forming the central slit U, in the processing lines (first and last processing lines) of both ends of the central slit U in the first direction X, from the both ends of the central slit U in the second direction Y to the frame region F. By further performing laser slit processing up to both ends in the two directions Y, a pair of end slits Sa formed by one processing line can be formed. The irradiation intensity of the laser light when forming the end slit Sa is a normal irradiation intensity.

As shown in FIG. 10, the side surface of the end slit Sa formed as described above is tapered in cross section due to the thermal effect of the laser light. Further, the peripheral region Rs (see FIG. 10) of the opening edge portion of the end slit Sa may be thermally deformed due to the thermal effect of the laser light. On the other hand, at the bottom of the end slit Sa, as shown in FIGS. 7 and 10, the center of one processing line does not overlap with the plurality of processing lines of the central slit U and extends in the second direction Y in plan view. It has become a line. Thus, since the end slit Sa is a slit in which one processing line is extended from the processing lines at both ends of the central slit U in the first direction X, the processing edge at the bottom of the end slit Sa becomes clear. ..

<Film layer slit inspection process>
After the film layer slit forming step, the positions of the alignment mark M and the end slits Sa are measured using, for example, a camera for inspection, and the central slit U and the end slits Sa have predetermined positions based on the measurement results. It is determined whether or not it is formed at the position. Note that the reading of the alignment mark M is performed, for example, by the reflectance when light is emitted.

The organic EL display device 50a can be manufactured as described above.

In the organic EL display device 50a, the end slit Sa is branched from both ends of the central slit U in the first direction X, but only the processing position of the film layer 40 is managed and the processing area of the film layer 40 is controlled. If not managed, the central slit U may be branched from only one end in the first direction X.

Further, in the organic EL display device 50a, the depth Hs of the end slit Sa is the same as the depth Hu of the central slit U, but may be different from the depth Hu. More specifically, the depth Hs of the end slit Sa may be larger or smaller than the depth Hu of the central slit U.

As described above, according to the organic EL display device 50a of this embodiment, the following effects can be obtained.

(1) In the film layer 40 in the bent portion B of the frame region F, a central slit U is formed in the central portion Bc of the folded portion B in the second direction Y, and at the end portion Be of the folded portion B in the second direction Y. The end slit Sa is formed. Further, in the first direction X, the length Wu of the central slit U is larger than the length Ws of the end slit Sa, so that the processing edge of the end slit Sa becomes clear. Therefore, even if the processing edge of the central slit U is unclear, the processing position of the end slit Sa can be accurately measured, so that the inspection of the processing position of the film layer 40 can be facilitated.

(2) Since the processing position of the edge slit Sa can be accurately measured, the processing position of the film layer 40 can be automatically detected, and the processing position of the film layer 40 can be easily managed.

(3) Since the end slits Sa are formed at both ends of the central slit U in the first direction X, and the length Ws of the end slits Sa can be accurately measured, not only the processing position of the film layer 40, The inspection and management of the processed area of the film layer 40 are facilitated.

(4) Since the remaining layer 40a of the film layer 40 is disposed between the pair of end slits Sa, it is possible to provide the frame area F with resistance to external force after bending.

<<Second Embodiment>>
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 12 is a plan view of the front surface side that is inside when the frame region F of the organic EL display device 50b of the present embodiment is bent, and is a diagram corresponding to FIG. 7. Further, FIG. 13 is a cross-sectional view of the bent portion B of the frame region F of the organic EL display device 50b taken along line XIII-XIII in FIG. 12, and corresponds to FIG. 14 is a cross-sectional view of the frame region F of the organic EL display device 50b taken along the line XIV-XIV in FIG. 12, and corresponds to FIG. Further, FIG. 15 is a cross-sectional view of a frame region F of a modified example of the organic EL display device 50b taken along line XIV-XIV in FIG. 12, and corresponds to FIG. The overall configuration of the organic EL display device 50b including the display region D other than the bent portion, the frame region F, and the like is the same as that of the above-described first embodiment, and thus detailed description thereof is omitted here. Moreover, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.

The organic EL display device 50b is characterized in that the depth Hu of the central slit U (see FIGS. 8 and 9) is larger than the depth Hs of the end slits Sb (see FIG. 14).

More specifically, the central slit U shown in FIG. 9 penetrates the film layer 40 and the surface of the OCA 41 is exposed, as described above, while the end slit Sb has the same shape as shown in FIGS. 13 and 14. , The film layer 40 is not penetrated. That is, as shown in FIGS. 13 and 14, in the edge slit Sb, the surface of the film layer 40b having a thickness (length in the third direction Z) smaller than that of the film layer 40 before processing by the laser slit processing is Exposed. The depth Hs of the end slit Sb is smaller than the thickness of the film layer 40 before processing, and is, for example, 1/3 or less of the thickness of the film layer 40.

Further, as shown in FIG. 12, in the first direction X, the length Ws of the end slit Sb is substantially the same as the length Wu of the central slit U. In other words, as shown in FIG. 12, the end slit Sb is formed over the entire area of the central slit U in the first direction X, and extends along the second direction Y, and is formed in a band shape in a plan view. In addition, in FIG. 12, the length Ws of the end slit Sb is slightly smaller than the length Wu of the central slit U. This is because the taper angle of the side surface of the end slit Sb (see FIG. 14) is smaller than the taper angle of the side surface of the central slit U (see FIG. 9).

Further, as shown in FIG. 12, the central axis Au of the central slit U is the same as the central axis As of the end slit Sb in the second direction Y.

Further, as shown in FIG. 12, the end slits Sb extend to both ends of the bent portion B in the second direction Y.

The organic EL display device 50b is manufactured by changing the irradiation condition of the laser light when forming the end slit Sb in the film layer slit forming step of the organic EL display device 50a of the first embodiment described above. be able to.

The end slits Sb are, for example, when forming the central slit U, in the processing lines (all processing lines) in the entire region of the central slit U in the first direction X, from the both ends of the central slit U in the second direction Y to the frame. It can be formed by further performing laser slit processing up to both ends of the region F in the second direction Y. At this time, the irradiation intensity of the laser light is reduced at both ends Be of the bent portion B. The irradiation intensity of the laser light when forming the end slit Sb is an irradiation intensity that does not penetrate the film layer 40 (hereinafter also referred to as “low irradiation intensity”).

As shown in FIGS. 12 and 14, the bottom portion of the end slit Sb (the portion where the surface of the film layer 40b is exposed) formed by the above is a minute unevenness in a sectional view in which the tip portions of a plurality of processing lines overlap each other. However, the depth Hs of the end slit Sb is smaller (shallow) than the depth Hu of the central slit U. As shown in FIG. 14, the side surface of the end slit Sb is slightly tapered in cross section, but the peripheral region Rs of the opening edge of the end slit Sb is less affected by laser light. Therefore, thermal deformation is difficult. As described above, the end slit Sb having the depth Hs is a shallower slit (having a smaller length in the third direction Z) than the central slit U having the depth Hu, and the thermal effect of the laser light is small. The machining edges at the bottom and the edge of the opening become clear.

In the organic EL display device 50b, as shown in FIG. 15, the end slits Sb may be the same as the depth Hu of the central slit U at both ends in the first direction X. In the modified example of the end slit Sb, as shown in FIG. 15, the centers of the processing lines at both ends in the first direction X do not overlap with the centers of other processing lines in the second direction Y at the bottom thereof. Since it has a linear shape extending along, the processing edge at the bottom of the end slit Sb becomes clear.

According to the organic EL display device 50b described above, the following effect can be obtained in addition to the effect of (2) above.

(5) Since the depth Hu of the central slit U is larger than the depth Hs of the end slit Sb, the end slit Sb is less affected by the heat of the laser beam, and the bottom slit and the opening edge portion of the end slit Sb. The processing edge becomes clear. Therefore, even if the processing edge of the central slit U is unclear, the processing position of the end slit Sb can be accurately measured, so that the inspection of the processing position of the film layer 40 can be facilitated.

(6) The end slit Sb is formed over the entire area of the central slit U in the first direction X, and the length Ws of the end slit Sb can be accurately measured. The inspection and management of the processed area of the film layer 40 are facilitated.

(7) Since the film layer 40b having a smaller thickness than the unprocessed film layer 40 is arranged in the end slit Sb, it is possible to provide the frame region F with resistance to an external force after bending, and also the frame region F. It is possible to reduce the stress applied to the film layer 40b at the bent portion B when the film is bent at the bent portion B.

<<Third Embodiment>>
Next, a third embodiment of the present invention will be described with reference to FIGS. FIG. 16 is a plan view of the front surface side that is inside when the frame region F of the organic EL display device 50c of the present embodiment is bent B, and is a diagram corresponding to FIG. 7. 17 is a cross-sectional view of the bent portion B of the frame region F of the organic EL display device 50c taken along the line XVII-XVII in FIG. 16 and corresponds to FIG. 18 is a cross-sectional view of the bent portion B of the frame region F of the organic EL display device 50c taken along the line XVIII-XVIII in FIG. 19 is a cross-sectional view of the frame region F of the organic EL display device 50c taken along the line XIX-XIX in FIG. 16 and corresponds to FIG. The overall configuration of the organic EL display device 50c including the display region D other than the bent portion, the frame region F, and the like is the same as that of the above-described first embodiment, and therefore detailed description thereof is omitted here. Moreover, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.

In the organic EL display device 50c, as shown in FIGS. 16 and 19, the end slit Sc includes a pair of first end slits Sce branched from both ends of the central slit U in the first direction X and a pair of first ends. It is characterized in that it is provided with a second end slit Scc that branches from the central portion of the central slit U in the first direction X so as to be sandwiched by the slits Sce.

Further, as shown in the enlarged view of FIG. 16, in the first direction X, the length Wsc of the second end slit Scc is larger than the length Wse of the first end slit Sce and the length Wu of the central slit U. Is smaller than. More specifically, as shown in FIG. 16, in plan view, the second end slit Scc is formed in a strip shape extending along the second direction Y, and the first end slit Sce is formed along the second direction Y. It is formed in a linear shape extending. Further, as shown in FIGS. 16 and 19, the pair of first end slits Sce and second end slits Scc are formed with a gap therebetween. Then, as shown in FIGS. 16 and 19, the film layer 40 is disposed between the pair of first end slits Sce and second end slits Scc. As described above, the first end slit Sce having the length Wse is a slit formed with a gap from the second end slit Scc having the length Wsc, so that the processing edge of the first end slit Sce becomes clear.

Further, the first end slit Sce and the second end slit Scc are extended to both ends of the bent portion B in the second direction Y as shown in FIG.

The depth Hsc of the second end slit Scc is larger than the depth Hse of the first end slit Sce as shown in FIG. More specifically, as shown in FIG. 19, the second end slit Scc penetrates the film layer 40 and the surface of the OCA 41 is exposed, while the first end slit Sce exposes the processed end surface of the film layer 40. Is formed. That is, as shown in FIGS. 16 to 19, the film layer 40 is removed in the central slit U and the second end slit Scc. The depth Hse of the first end slit Sce is, for example, 1/3 or less of the thickness of the film layer 40. The depth Hsc of the second end slit Scc is almost the same as the depth Hu (see FIG. 18) of the central slit U.

The organic EL display device 50c is manufactured by changing the irradiation condition of the laser light when forming the end slit Sc in the film layer slit forming step of the organic EL display device 50a of the first embodiment described above. be able to.

The end slit Sc is, for example, when forming the central slit U, from the both ends of the central slit U in the second direction Y in the processing line of both ends of the central slit U in the first direction X and the processing line of the central portion. The first end slit Sce and the second end slit Scc can be formed by further performing the laser slit processing up to both ends of the frame region F in the second direction Y. Here, only when forming the first end slit Sce, the irradiation intensity of the laser light is set to a low irradiation intensity.

The peripheral region Rcc (see FIG. 19) of the opening edge portion on the second end slit Scc side of the first end slit Sce formed as described above is heated by the thermal influence of the laser light when the second end slit Scc is formed. It may be deformed. On the other hand, in the peripheral region Rce (see FIG. 19) of the opening edge portion on the side opposite to the second end slit Scc side of the first end slit Sce (both ends in the first direction X), the thermal effect of laser light is small, Hard to be deformed by heat. As described above, the first end slit Sce with the depth Hse is a shallower slit than the second end slit Scc with the depth Hsc, and the thermal effect of the laser light is small. Therefore, the bottom and the opening edge of the first end slit Sce are small. The processing edge in the part becomes clear.

In the organic EL display device 50c, the depth Hsc of the second end slit Scc is larger than the depth Hse of the first end slit Sce, but it may be the same or smaller. For example, the depth Hse of the first end slit Sce may be the same as the depth Hu of the central slit U such that the depth Hse of the first end slit Sce is the same as the depth Hsc of the second end slit Scc. The depth Hsc may be smaller than the depth Hu of the central slit U and may be the same as the depth Hse of the first end slit Sce.

Further, in the organic EL display device 50c, a gap is provided between the pair of the first end slit Sce and the second end slit Scc, but the depth Hse of the first end slit Sce is the second end slit Scc. If the depth is larger than the depth Hsc, the gap may not be provided.

According to the organic EL display device 50c described above, the following effect can be obtained in addition to the effect of (2) above.

(8) As the end slits Sc, a pair of first end slits Sce extending from both ends of the central slit U in the first direction X and a pair of first slits extending from the central part of the central slit U in the first direction X. A two-end slit Scc is formed. Then, in the first direction X, the length Wsc of the second end slit Scc is larger than the length Wse of the first end slit Sce, so that the processing edge of the first end slit Sce becomes clear. Therefore, even if the processing edges of the central slit U and the second end slit Scc are unclear, the processing position of the first end slit Sce can be accurately measured, so that the processing position of the film layer 40 can be easily inspected. Can be

(9) Since the depth Hsc of the second end slit Scc is larger than the depth Hse of the first end slit Sce, the first end slit Sce is less affected by the heat of the laser light, and the first end slit Sce has a smaller effect. The processed edge at the bottom of Sce and the edge of the opening becomes even clearer.

(10) The first end slit Sce is formed at both ends of the central slit U in the first direction X, and the length Wse of the first end slit Sce can be accurately measured. Not only that, the inspection and management of the processed area of the film layer 40 becomes easy.

(11) Since the film layer 40 is arranged between the pair of the first end slit Sce and the second end slit Scc, it is possible to provide the frame area F with resistance to external force after bending.

(12) Since the film layer 40 is removed in the central slit U and the second end slit Scc, when the frame region F is bent at the bent portion B, the stress applied to the film layer 40 at the bent portion B is further increased. It can be reduced.

<<Other Embodiments>>
In each of the above embodiments, the end slits are formed at both ends of the bent portion in the second direction, but may be formed only at one end of the bent portion in the second direction.

In each of the above embodiments, the inorganic laminated film is composed of four layers in which the gate insulating film, the first interlayer insulating film, and the second interlayer insulating film are laminated in this order on the base coat film. It may be configured, or may be configured by two layers of a base coat film and a gate insulating film.

In each of the above-described embodiments, the organic EL layer having a five-layer laminated structure of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer is exemplified. It may have a three-layer laminated structure of a layer/hole transport layer, a light emitting layer, and an electron transport layer/electron injection layer.

Further, in each of the above-described embodiments, the organic EL display device in which the first electrode is the anode and the second electrode is the cathode has been illustrated, but the present invention inverts the laminated structure of the organic EL layers to form the first electrode as the cathode. And can be applied to an organic EL display device using the second electrode as an anode.

Further, in each of the above-described embodiments, the organic EL display device has been described as an example of the display device, but the present invention is not limited to the organic EL display device and can be applied to any flexible display device. For example, it can be applied to a flexible display device including a QLED (Quantum-dot light emitting diode) which is a light emitting element using a quantum dot containing layer.

As described above, the present invention is useful for flexible display devices.

As central axis Au of the slit (in the second direction) Au central axis of the central slit (in the second direction) B bent portion Bc central portion of the bent portion in the second direction Be both ends of the bent portion in the second direction D display area F Frame area Hs Edge slit depth Hsc Second edge slit depth Hse First edge slit depth Hu Central slit depth M Alignment marks Sa, Sb, Sc Film layer edge slits Scc Second edge slits Sce First end slit T Terminal portion U Central slit V Slit Ws of inorganic insulating film (at least one layer of inorganic insulating film) Length of end slit (in first direction) Wsc Length of second end slit (in first direction) Length Wse Length of first slit (in first direction) Wu Length of center slit (in first direction) X First direction Y Second direction 10 Resin substrate layer (resin substrate)
11 Base coat film (at least one layer of inorganic insulating film)
13 Gate insulating film (at least one layer of inorganic insulating film)
15 First interlayer insulating film (at least one layer of inorganic insulating film)
17 Second interlayer insulating film (at least one layer of inorganic insulating film)
18h Connection wiring 20 TFT layer 25 Organic EL element (light emitting element)
30 Inorganic laminated film (at least one layer of inorganic insulating film)
35 terminals 40 film layers 50a, 50b, 50c organic EL display device

Claims (14)

A resin substrate,
A TFT layer provided on the resin substrate and having at least one inorganic insulating film laminated on the resin substrate;
A plurality of light emitting elements provided on the TFT layer and forming a display region;
A frame area provided around the display area,
A terminal portion provided at an end portion of the frame region, in which a plurality of terminals are arranged,
A bent portion provided so as to extend in one direction between the display region and the terminal portion,
A slit of the inorganic insulating film provided in the at least one layer of inorganic insulating film in the bent portion,
In the bent portion, a plurality of connections provided so as to extend in parallel to each other in a first direction intersecting with the slit of the inorganic insulating film and electrically connected to the plurality of terminals and a plurality of wirings of the display region, respectively. Wiring,
A film layer provided on the surface of the resin substrate opposite to the surface provided with the TFT layer;
A display device comprising a central slit and an end slit which are provided in the film layer in the bent portion, and which extend along a second direction perpendicular to the first direction and parallel to the surface of the resin substrate,
The central slit is provided at a central portion of the bent portion in the second direction, and the end slit is provided at at least one end portion of the folded portion in the second direction,
In the first direction, the length of the central slit is larger than the length of the end slit, or the depth of the central slit is larger than the depth of the end slit. The display device according to claim 1,
In the first direction, the length of the central slit is larger than the length of the end slit,
The display device, wherein the end slit is a slit branched from at least one end of the central slit in the first direction. The display device according to claim 2,
The display device, wherein the branched end slits are provided at both ends of the central slit in the first direction. The display device according to claim 3,
The branched end slits are a pair of first end slits branched from both ends of the central slit in the first direction,
A display device, comprising: a second end slit branching from a central portion of the central slit in the first direction so as to be sandwiched by the pair of first end slits. The display device according to claim 4,
The depth of the said 2nd end slit is larger than the depth of the said 1st end slit of a pair, The display apparatus characterized by the above-mentioned. The display device according to claim 4 or 5,
In the first direction, the length of the second end slit is larger than the length of the pair of first end slits. The display device according to any one of claims 1 to 6,
The said center slit has penetrated the said film layer, The display apparatus characterized by the above-mentioned. The display device according to any one of claims 1 to 7,
The said end slit has penetrated the said film layer, The display apparatus characterized by the above-mentioned. The display device according to claim 1,
The depth of the central slit is larger than the depth of the end slit,
The said center slit has penetrated the said film layer, The display apparatus characterized by the above-mentioned. The display device according to claim 9,
The depth of the said edge slit is smaller than the thickness of the said film layer, The display apparatus characterized by the above-mentioned. The display device according to claim 10,
In the second direction, the central axis of the central slit is the same as the central axis of the end slits. The display device according to any one of claims 1 to 11,
The display device, wherein the end slits are provided at both ends of the bent portion in the second direction. The display device according to any one of claims 1 to 12,
Each of the light emitting elements is an organic EL element. A resin substrate having a display area, a frame area around the display area, a terminal portion in which a plurality of terminals are arranged at an end of the frame area, and a bent portion extending in one direction between the display area and the terminal portion. A resin substrate forming step to be formed,
A TFT layer in which at least one inorganic insulating film is laminated on the resin substrate is formed, an alignment mark is formed on the TFT layer in the frame region, and a slit is formed in the inorganic insulating film in the bent portion of the frame region. And a TFT layer that forms a plurality of connection wirings that extend in parallel to each other in a first direction intersecting the slit and are electrically connected to a plurality of terminals of the terminal portion and a plurality of wirings of the display region, respectively. Forming process,
A light emitting element forming step of forming a plurality of light emitting elements forming the display region on the TFT layer;
After the resin substrate forming step, a film attaching step of attaching a film layer to the surface of the resin substrate opposite to the surface on which the TFT layer is provided,
After the film sticking step, the film layer is irradiated with laser light in the bent portion using an alignment mark provided on the TFT layer, and the film layer is perpendicular to the first direction and the resin substrate. A film layer slit forming step of forming a central slit and an end slit extending along a second direction parallel to the surface of
In the film layer slit forming step, in the bent portion, a central slit is formed in the central portion in the second direction, and an end slit is formed in at least one end portion in the second direction,
In the first direction, the length of the central slit is formed to be larger than the length of the end slit, or the depth of the central slit is formed to be larger than the depth of the end slit,
After the film layer slit forming step, further measuring a position of the alignment mark and the end slit, a film layer slit inspection step of determining whether the end slit and the central slit are formed at predetermined positions. A method for manufacturing a display device, comprising:

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