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WO2019189072A1 - Filtre optique et son utilisation - Google Patents

Filtre optique et son utilisation Download PDF

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Publication number
WO2019189072A1
WO2019189072A1 PCT/JP2019/012680 JP2019012680W WO2019189072A1 WO 2019189072 A1 WO2019189072 A1 WO 2019189072A1 JP 2019012680 W JP2019012680 W JP 2019012680W WO 2019189072 A1 WO2019189072 A1 WO 2019189072A1
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WO
WIPO (PCT)
Prior art keywords
wavelength
optical filter
group
requirement
transmittance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/012680
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English (en)
Japanese (ja)
Inventor
寛之 岸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
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Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP2020510853A priority Critical patent/JP7143881B2/ja
Priority to KR1020207027397A priority patent/KR102720920B1/ko
Priority to CN201980019400.8A priority patent/CN111868579B/zh
Publication of WO2019189072A1 publication Critical patent/WO2019189072A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors

Definitions

  • One embodiment of the present invention relates to an optical filter.
  • the present invention relates to an optical filter (for example, a near infrared cut filter) having specific optical characteristics, and a solid-state imaging device, a camera module, and a sensor module using the optical filter.
  • an optical filter for example, a near infrared cut filter
  • a solid-state imaging device such as a conventional video camera, a digital still camera, or a mobile phone with a camera function uses a CCD or a CMOS image sensor, which is a solid-state imaging device.
  • Silicon photodiodes that are sensitive to near infrared rays that cannot be sensed by the eyes are used. These solid-state image sensors need to be corrected for visibility so that they appear natural to the human eye.
  • Optical filters that selectively transmit or cut light in a specific wavelength region (for example, near-infrared cut) Filter) is often used.
  • filters manufactured by various methods are used as such optical filters.
  • an absorption glass type infrared cut filter in which copper oxide is dispersed in phosphate glass for example, Patent Document 1
  • a resin type infrared cut filter having a layer in which a dye having absorption in the near infrared region is dispersed for example, Patent Document 2
  • a transparent dielectric substrate glass substrate
  • a glass substrate-coated infrared cut filter for example, Patent Document 3
  • Patent Document 3 having an infrared reflection layer and an infrared absorption layer
  • a resin as a base material and a wavelength of 600 to 800 nm in the resin
  • a resin type near-infrared cut filter using a dielectric multilayer film having near-infrared reflection performance on both surfaces of the substrate Patent Document 4
  • a glass substrate with a wavelength of about 695 to 720 nm Glass substrate coating type infrared cut filter (Patent Document 5) coated with a resin layer containing a dye having absorption
  • a band pass filter is used for an image sensor having a sensor function combined with a distance measuring sensor using near infrared rays.
  • a band-pass filter Patent Document 6 having a transmission band in the visible region and a transmission band in a part of the near infrared region is known.
  • the above-mentioned conventional absorption glass type, resin type, and glass substrate coating type infrared cut filters for image sensors are excellent in correcting the visual sensitivity that makes natural colors seen by the human eye, while infrared cut filters with strong absorption intensity are
  • the solid-state imaging device, camera module, and sensor module obtained by using a conventional infrared cut filter are liable to cause an image defect due to dark current in order to cause a temperature rise due to absorption of external light.
  • an infrared cut filter having a dielectric multilayer film (for example, Patent Document 7) is known as an infrared cut filter having a characteristic of cutting light having a wavelength of more than 1200 nm in order to suppress the influence on living tissue.
  • the filter has a high transmittance at a wavelength of 720 to 1100 nm for use as an imaging device or a sensor module, lacks a shielding performance as a visibility correction, and increases a temperature that causes a dark current.
  • the cutting performance of the light having a wavelength of 1200 to 1600 nm is insufficient, and the effect of suppressing dark current is insufficient.
  • an optical filter that is thin and excellent in visible light transmittance characteristics and visibility correction characteristics, has a high light cutting performance over a wide infrared region with a wavelength of 1200 to 1600 nm, and has a dark current suppressing effect has not been obtained. It was.
  • One embodiment of the present invention improves the shortcomings of conventional optical filters such as near-infrared cut filters, is thin, excellent in visibility correction, high performance in cutting light in the mid-infrared region, dark current An optical filter having a suppressing effect is provided.
  • a configuration example of one embodiment of the present invention is as follows.
  • the description such as “A to B” representing a numerical range is synonymous with “A or more and B or less”, and A and B are included in the numerical range.
  • An optical filter having a substrate and a dielectric multilayer film on at least one surface of the substrate and satisfying the following requirements (A) to (C).
  • An optical filter having a substrate and a dielectric multilayer film on at least one surface of the substrate and satisfying the following requirements (A), (B) and (D).
  • the average value of the transmittance is 10% or less, and the wavelength width of the transmission band in which the transmittance of the non-polarized light is 50% or more when measured from the vertical direction of the optical filter at a wavelength of 750 to 1000 nm is 1 nm or more.
  • A1 100 ⁇ T1-R1 (1)
  • A2 100 ⁇ T2-R2 (2)
  • the optical filter according to any one of [1] to [8], which satisfies the following requirement (L).
  • the optical filter according to any one of [1] to [10], wherein the substrate has an absorption maximum wavelength at a wavelength of 670 to 950 nm.
  • the substrate has a first infrared absorber (DA) having an absorption maximum wavelength ⁇ (DA_Tmin) at a wavelength of 685 to 710 nm, and a second infrared ray having an absorption maximum wavelength ⁇ (DB_Tmin) at a wavelength of 710 to 765 nm.
  • DA infrared absorber
  • DB_Tmin absorption maximum wavelength
  • a solid-state imaging device including the optical filter according to any one of [1] to [15].
  • a camera module including the optical filter according to any one of [1] to [15].
  • a sensor module including the optical filter according to any one of [1] to [15].
  • an optical filter that is thin and excellent in visibility correction, has a high reflectance in the mid-infrared region, and has a dark current suppression effect, and an apparatus and a camera module using the optical filter A sensor module or the like can be provided.
  • FIG. 1 is a schematic diagram showing a configuration of an optical filter according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a method for measuring the transmittance of the optical filter.
  • FIG. 3 is a schematic diagram showing a method for measuring the reflectance of the optical filter.
  • FIG. 4 is a schematic diagram showing an outline of the positional relationship of each member when measuring the temperature rise amount as an index of the dark current suppression effect of the optical filter in the example.
  • FIG. 5 is a schematic diagram illustrating an example of an imaging apparatus and a module including an optical filter according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram illustrating an example of an imaging apparatus and a module that do not include a lens including an optical filter according to an embodiment of the present invention.
  • FIG. 1 is a schematic diagram showing a configuration of an optical filter according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a method for measuring the transmittance of the optical filter.
  • FIG. 3 is
  • FIG. 7 shows optical characteristics of the optical filter 3 obtained in Example 3.
  • FIG. 8 shows optical characteristics of the optical filter 6 obtained in Example 6.
  • FIG. 9 shows optical characteristics of the optical filter 7 obtained in Example 7.
  • FIG. 10 shows optical characteristics of the optical filter 9 of Comparative Example 1.
  • FIG. 11 shows design optical characteristics of the dielectric multilayer film provided in Example 4.
  • FIG. 12 shows design optical characteristics of the dielectric multilayer film provided in Comparative Example 1.
  • an optical filter according to an embodiment of the present invention includes a substrate and a dielectric multilayer film on at least one surface of the substrate. And a filter (I) satisfying the following requirements (A) to (C), or a filter (II) satisfying the following requirements (A), (B) and (D).
  • the visible light transmittance is high, and when this filter is used for a solid-state imaging device, a sensor module, a camera module, etc., a good image can be obtained.
  • the average value of the transmittance in the requirement (A) is preferably 80% or more, more preferably 85% or more, and particularly preferably 88.5% or more.
  • the average transmittance is preferably as high as possible.
  • the upper limit is 100%.
  • the average value (average transmittance) of the transmittances at wavelengths A to Bnm was measured by measuring the transmittance at each wavelength of 1 nm from Anm to Bnm and measuring the total transmittance. It is a value divided by the number of transmittances (wavelength range, B ⁇ A + 1).
  • LIDAR Light Detection and Ranging
  • a wavelength of 1200 to 1600 nm that is invisible to human eyes may be used as a light source. Since this filter satisfies the requirement (B), a solid-state imaging device, a sensor module, a camera module, and the like are provided with such a filter so that a subject having a LIDAR using a wavelength of 1200 to 1600 nm is imaged. Even in such a case, it is possible to suppress the phenomenon that the solid-state imaging device, the sensor module, the camera module, and the like are destroyed by the light emitted from the subject.
  • the average value of the reflectance in the requirement (B) is preferably 70% or more, more preferably 80% or more, and particularly preferably 90% or more.
  • the average reflectance is preferably as high as possible.
  • the upper limit is 100%.
  • the average reflectance (average reflectance) of wavelengths A to Bnm was measured by measuring the reflectance at each wavelength of 1 nm from Anm to Bnm and measuring the total reflectance. It is a value divided by the number of reflectances (wavelength range, B ⁇ A + 1). Since it is extremely difficult to measure the reflectance of unpolarized light incident from the vertical direction, in the present invention, the reflectance of unpolarized light incident from an angle of 5 ° from the vertical direction was measured.
  • Requirement (B) is the average reflection of non-polarized light incident at an angle of 5 ° from the vertical direction of one surface of the filter (hereinafter also referred to as “surface X” and the other surface is also referred to as “surface Y”).
  • the ratio may be in the above range, but it is preferable that both of the average reflectances of the non-polarized light incident from an angle of 5 ° from the vertical direction of both the surface X and the surface Y of the filter are in the range.
  • the surface X usually refers to the main surface of the optical filter, and refers to one of the surfaces having the largest area. In this case, the other surface having the largest area is the surface Y.
  • non-polarized light beam is a light beam having no polarization direction bias, and means an aggregate of waves in which the electric field is distributed almost uniformly in all directions.
  • average transmittance of non-polarized light an average value of “average transmittance of S-polarized light” and “average transmittance of P-polarized light” may be used.
  • average reflectance of non-polarized light an average value of “average reflectance of S-polarized light” and “average reflectance of P-polarized light” may be used.
  • this filter can be a near-infrared cut filter, and can block near-infrared rays that are difficult or invisible to human eyes.
  • an image sensor such as a silicon photodiode or black silicon
  • the average value of the transmittance in the requirement (C) is more preferably 2% or less, further preferably 1% or less, and particularly preferably 0.5% or less.
  • the lower the average transmittance the better.
  • the lower limit is 0%.
  • this filter When this filter is used for a near-infrared sensor, it is preferable to satisfy the requirement (D). By satisfying the requirement (D), this filter can be a dual bandpass filter.
  • this filter When this filter is used for a solid-state imaging device, a sensor module, a camera module, etc. having sensitivity to near infrared rays, the wavelength at which sensing is performed. It is possible to shield near-infrared rays that are difficult or invisible to human eyes and can obtain a good image, distance information, and the like.
  • the wavelength region where the transmission band where the transmittance is 50% or more exists is more preferably 800 to 1000 nm, and particularly preferably 845 to 970 nm.
  • the wavelength region where the transmission band having a transmittance of 50% or more exists is in the above range, it is possible to perform sensing using light having a wavelength that is less visible to human eyes, and the sensitivity of the photodiode is high. Wavelengths can be used.
  • the average value of the transmittance in requirement (D) is more preferably 8% or less, and further preferably 1 to 6%.
  • the wavelength width of the transmission band is more preferably 1 nm or more and 100 nm or less, more preferably 1 nm or more and 50 nm or less, from the viewpoint of suppressing sensitivity decrease due to stray light, and the like. Especially preferably, they are 1 nm or more and 25 nm or less.
  • the filter (I) preferably satisfies the following requirement (E).
  • the maximum value of the transmittance is more preferably 20% or less, further preferably 10% or less, more preferably 5% or less, and particularly preferably 2% or less.
  • the maximum value of the transmittance is preferably as low as possible. For example, the lower limit is 0%.
  • This filter preferably satisfies the following requirement (F).
  • the average transmittance is more preferably 10% or less, further preferably 5% or less, and particularly preferably 2% or less.
  • the average transmittance is preferably as low as possible. For example, the lower limit is 0%.
  • this filter absorbs light having a wavelength of 1200 to 1600 nm, the filter generates heat, and the heat affects the image sensor and the like, which may lead to an increase in dark current.
  • This filter preferably satisfies the following requirement (G) from the viewpoint of suppressing the filter itself from absorbing light having a wavelength of 1200 to 1600 nm and generating heat.
  • A1 100 ⁇ T1-R1 (1)
  • A2 100 ⁇ T2-R2 (2)
  • T1 and T2 average transmittance T1 (%) of incident light (unpolarized light beam) incident from a direction perpendicular to one surface X of the optical filter at a wavelength of 1200 to 1600 nm, and perpendicular to the other surface Y of the optical filter
  • R1 and R2 average reflectance R1 (%) of non-polarized light incident at an angle of 5 ° from the vertical direction of one surface X of the optical filter at a wavelength of 1200 to 1600 nm, and the other surface Y of the optical filter Average reflectance R2 (%) of unpolarized light incident from an angle of 5 ° from the vertical direction
  • the A1 and A2 are each preferably 10% or less, more preferably 5% or less, and particularly preferably 1.5% or less.
  • the lower limit is 0%.
  • This filter preferably satisfies the following requirements (H) and / or (J) from the viewpoint of the in-plane distribution of colors near red in an image obtained by a solid-state imaging device, a sensor module, a camera module, or the like.
  • the absolute value of the difference from the shortest wavelength (Xb) is 65 nm or less
  • the difference in transmittance between wavelengths near the red of light incident on the optical filter in the vertical direction and light incident at an angle of 30 ° is reduced, and this filter is a solid that has sensitivity to near infrared rays.
  • an imaging device a sensor module, a camera module, or the like
  • an image having a better in-plane distribution of colors near red in the obtained image can be obtained.
  • the absolute value in the requirement (H) is more preferably 10 nm or less, further preferably 3 nm or less, and particularly preferably 2 nm or less.
  • the absolute value is preferably as low as possible.
  • the lower limit is 0 nm.
  • the absolute value in the requirement (J) is more preferably 60 nm or less, further preferably 55 nm or less, and particularly preferably 45 nm or less.
  • the lower limit of the absolute value is not particularly limited, but is 1 nm, for example.
  • This filter preferably satisfies the following requirement (K) from the viewpoint of being superior in the in-plane distribution of colors near blue in an image obtained by a solid-state imaging device, a sensor module, a camera module, or the like.
  • the absolute value of the difference in the requirement (K) is more preferably 4 nm or less, and further preferably 3 nm or less.
  • the absolute value is not particularly limited, but for example, the lower limit is 0 nm.
  • the wavelength region is more preferably 400 to 425 nm, and still more preferably 400 to 421 nm. It is desirable to have the wavelength ⁇ 0 (UV), more preferably to have the wavelength ⁇ 30 (UV) in the wavelength region of 390 to 425 nm, and even more preferably in the wavelength region of 390 to 423 nm.
  • This filter preferably satisfies the following requirement (L).
  • ⁇ 0 UV
  • the transmittance at the same wavelength in the vicinity of blue is reduced for light incident at a higher incident angle than in the vertical direction.
  • the transmittance tends to decrease for both green and red at higher incident angles than in the vertical direction, and there is less change in the color of the transmitted light. Even if the light is incident, it is possible to obtain a better image with less in-plane distribution of color in an image obtained by a solid-state imaging device, a sensor module, a camera module, or the like.
  • ⁇ 30 (UV) ⁇ 0 (UV) is more preferably more than 1 nm, particularly preferably 2 nm or more, more preferably 2 nm or more and 10 nm or less, and particularly preferably 2 nm or more and 5 nm or less.
  • ⁇ 30 (UV) ⁇ 0 (UV) is in the above range, an excessive decrease in transmittance at the same wavelength near blue can be suppressed.
  • This filter preferably satisfies the following requirement (M) from the standpoint of being superior in the in-plane distribution of colors near green in an image obtained by a solid-state imaging device, a sensor module, a camera module, or the like.
  • the average value T30 of the transmittance of non-polarized light when measured satisfies the following formula (3): 0.95 ⁇ T0 / T30 ⁇ 1.05 (3)
  • T0 / T30 is more preferably 0.96 ⁇ T0 / T30 ⁇ 1.04, and more preferably 0.97 ⁇ T0 /, from the point of consistency with the decrease in blue transmittance and the suppression of color change.
  • T30 ⁇ 1.03 particularly preferably 0.99 ⁇ T0 / T30 ⁇ 1.03, and most preferably 1.00 ⁇ T0 / T30 ⁇ 1.03.
  • the thickness of the present filter is preferably 0.2 mm or less, more preferably 0.12 mm or less, further preferably 0.116 mm or less, and particularly preferably 0.01 mm or more and 0.08 mm or less.
  • the thickness of the filter is within the above range, the solid-state imaging device, sensor module, camera module, etc. using the filter can be thinned, and the size can be further reduced.
  • the thickness of this filter is less than 0.01 mm, the warp due to the stress of the dielectric multilayer film tends to increase, and the handling tends to be difficult.
  • the material, shape, and the like of the substrate are not particularly limited, and examples thereof include a substrate made of a transparent inorganic material, a resin, and the like, preferably a plate-like body.
  • the substrate may be a single layer as shown in FIG. 1 (A) or (B), or may be a multilayer as shown in FIG. 1 (C) or (D), but an additive such as an infrared absorber may be added. It is preferable to have a containing layer.
  • the substrate include a substrate made of a single layer of transparent inorganic material or resin (hereinafter also referred to as “support substrate”) that does not include an infrared absorber; a single layer of transparent inorganic material that includes an infrared absorber. And a substrate made of resin or the like (hereinafter also referred to as “absorbing plate”); at least one layer made of a resin not containing an infrared absorber (hereinafter also referred to as “resin layer”) and at least one layer of support.
  • support substrate a substrate made of a single layer of transparent inorganic material or resin
  • absorbing plate a substrate made of resin or the like
  • at least one layer made of a resin not containing an infrared absorber herein layer
  • Laminated body with substrate (hereinafter also referred to as “Laminated body 1”); at least one layer made of a resin containing an infrared absorber (hereinafter also referred to as “absorbing layer”) and at least one supporting substrate.
  • laminate 2 a laminate of at least one absorption layer and at least one resin layer
  • laminate 3 a laminate of at least one absorption layer and at least one resin layer
  • at least one layer A resin layer, at least one absorption layer, and at least Laminate of the support substrate of single-layer hereinafter referred to as "laminate 4".
  • preferred absorbing plate and the laminate 2-4 The absorption plate and the absorption layer may be the same plate (layer).
  • the support substrate and the resin layer may be the same plate (layer).
  • the thickness of the substrate is not particularly limited and may be appropriately selected depending on the desired application, but is preferably 0.01 to 0.2 mm, more preferably 0.01 to 0.12 mm, and particularly preferably 0.015. ⁇ 0.11 mm.
  • an optical filter that is easy to handle can be obtained, and the solid-state imaging device, sensor module, camera module, etc. using the obtained filter can be thinned, and further miniaturization is possible. It becomes.
  • Transparent inorganic material for example, quartz, borosilicate glass, silicate glass, chemically tempered glass, physical tempered glass, soda glass, phosphate glass, fluorophosphate glass, Examples thereof include alumina glass and sapphire glass.
  • the resin is not particularly limited as long as it does not impair the effects of the present invention. For example, it ensures thermal stability and moldability to a plate-like body, and dielectrics are formed by high-temperature deposition performed at a deposition temperature of 100 ° C. or higher.
  • a resin having a glass transition temperature (Tg) of preferably 110 to 380 ° C., more preferably 110 to 370 ° C., and still more preferably 120 to 360 ° C. is used to form a substrate on which a multilayer film can be formed.
  • Tg glass transition temperature
  • the glass transition temperature of the resin is 140 ° C. or higher, even when the glass transition temperature is lowered by adding a compound to the resin at a high concentration, a substrate capable of vapor-depositing the dielectric multilayer film at a high temperature, Therefore, it is particularly preferable.
  • the total light transmittance (JIS K7105) of the resin plate is preferably 75 to 95%, more preferably 78 to 95%. Particularly preferably, a resin with a content of 80 to 95% can be used. When a resin having a total light transmittance in such a range is used, the resulting substrate exhibits good transparency as an optical film.
  • the weight average molecular weight (Mw) in terms of polystyrene measured by the gel permeation chromatography (GPC) method of the resin is usually 15,000 to 350,000, preferably 30,000 to 250,000, and the number average The molecular weight (Mn) is usually 10,000 to 150,000, preferably 20,000 to 100,000.
  • the resin examples include cyclic (poly) olefin resin, aromatic polyether resin, polyimide resin, polycarbonate resin, polyester resin, polyamide (aramid) resin, polysulfone resin, and polyethersulfone resin. , Polyparaphenylene resin, polyamideimide resin, polyethylene naphthalate resin, fluorinated aromatic polymer resin, (modified) acrylic resin, epoxy resin, silsesquioxane UV curable resin, maleimide resin , Alicyclic epoxy thermosetting resin, polyether ether ketone resin, polyarylate resin, allyl ester curable resin, acrylic UV curable resin, vinyl UV curable resin and silica formed by sol-gel method. A resin having a main component can be mentioned.
  • Resin may be used individually by 1 type and may use 2 or more types.
  • the cyclic (poly) olefin resin is at least one monomer selected from the group consisting of a monomer represented by the following formula (X 0 ) and a monomer represented by the following formula (Y 0 )
  • a resin obtained by using and a resin obtained by hydrogenating the resin are preferred.
  • R x1 to R x4 each independently represents an atom or group selected from the following (i ′) to (ix ′), and k x , mx and p x are each independently 0 Represents an integer of ⁇ 4.
  • R x1 and R x2 or R x3 and R x4 are bonded to each other to form a monocyclic or polycyclic hydrocarbon ring or heterocyclic ring (provided that R x1 to R not involved in the bonding) x4 each independently represents an atom or group selected from (i ′) to (vi ′).
  • Ix ′ A monocyclic hydrocarbon ring or heterocycle formed by bonding R x2 and R x3 to each other (provided that R x1 and R x4 not involved in the bonding are independently the above (i Represents an atom or group selected from ') to (vi').
  • R y1 and R y2 each independently represents an atom or group selected from the above (i ′) to (vi ′), or R y1 and R y2 are bonded to each other formed monocyclic or polycyclic alicyclic hydrocarbon, an aromatic hydrocarbon or heterocyclic, k y and p y are each independently an integer of 0-4.
  • the aromatic polyether-based resin preferably has at least one structural unit selected from the group consisting of a structural unit represented by the following formula (1) and a structural unit represented by the following formula (2).
  • R 1 to R 4 each independently represents a monovalent organic group having 1 to 12 carbon atoms, and a to d each independently represents an integer of 0 to 4.
  • R 1 ⁇ R 4 and a ⁇ d each independently, the formula (1) have the same meanings as R 1 ⁇ R 4 and a ⁇ d of, Y represents a single bond, -SO 2 -or -CO-, R 7 and R 8 each independently represent a halogen atom, a monovalent organic group having 1 to 12 carbon atoms or a nitro group, and g and h each independently represents 0 to 4 And m represents 0 or 1. However, when m is 0, R 7 is not a cyano group.
  • the aromatic polyether-based resin further has at least one structural unit selected from the group consisting of a structural unit represented by the following formula (3) and a structural unit represented by the following formula (4). It may be.
  • R 5 and R 6 each independently represents a monovalent organic group having 1 to 12 carbon atoms, and Z represents a single bond, —O—, —S—, —SO 2 —, —CO—, —CONH—, —COO— or a divalent organic group having 1 to 12 carbon atoms, e and f each independently represents an integer of 0 to 4, and n represents 0 or 1.
  • R 7 , R 8 , Y, m, g and h are each independently synonymous with R 7 , R 8 , Y, m, g and h in formula (2);
  • R 5 , R 6 , Z, n, e and f are each independently synonymous with R 5 , R 6 , Z, n, e and f in the formula (3).
  • the polycarbonate resin is not particularly limited, and can be synthesized by, for example, a method described in JP-A-2008-163194.
  • polyester resin The polyester-based resin is not particularly limited, and can be synthesized by, for example, a method described in JP 2010-285505 A or JP 2011-197450 A.
  • the polyimide resin is not particularly limited as long as it is a polymer compound containing an imide bond in a repeating unit.
  • it is synthesized by a method described in JP-A-2006-199945 and JP-A-2008-163107. can do.
  • the fluorinated aromatic polymer-based resin is not particularly limited, but at least selected from the group consisting of an aromatic ring having at least one fluorine atom, an ether bond, a ketone bond, a sulfone bond, an amide bond, an imide bond, and an ester bond.
  • the polymer preferably contains a repeating unit containing one bond, and can be synthesized by, for example, a method described in JP-A-2008-181121.
  • the acrylic ultraviolet curable resin is not particularly limited, but is synthesized from a resin composition containing a compound having one or more acrylic or methacrylic groups in the molecule and a compound that decomposes by ultraviolet rays to generate active radicals. Can be mentioned.
  • the acrylic ultraviolet curable resin can be particularly preferably used as the curable resin when a curable resin is used as the resin layer or the absorption layer.
  • resins based on silica by the sol-gel method include tetraalkoxysilanes such as tetramethoxysilane, tetraethoxysilane, dimethoxydiethoxylane, and methoxytriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, diphenyldimethoxysilane, A compound obtained by a sol-gel reaction by hydrolysis of one or more silanes selected from phenylalkoxysilanes such as diphenyldiethoxysilane can be used as the resin.
  • cyclic (poly) olefin-based resins examples include ARTON manufactured by JSR Corporation, ZEONOR manufactured by Nippon Zeon Co., Ltd., APEL manufactured by Mitsui Chemicals, Inc., and TOPAS manufactured by Polyplastics Corporation.
  • polyethersulfone resins examples include Sumika Excel PES manufactured by Sumitomo Chemical Co., Ltd.
  • a commercial item of a polyimide resin Mitsubishi Gas Chemical Co., Ltd. Neoprim L is mentioned, for example.
  • Examples of commercially available polycarbonate resins include Pure Ace manufactured by Teijin Limited and Iupizeta EP-5000 manufactured by Mitsubishi Gas Chemical Co., Ltd.
  • polyester-type resin Osaka Gas Chemical Co., Ltd. OKP4HT is mentioned, for example.
  • acrylic resin for example, NIPPON CATALYST ACRYVIEWER is mentioned.
  • silsesquioxane ultraviolet curable resins include Silplus manufactured by Nippon Steel Chemical Co., Ltd.
  • the resin-made support substrate, absorption plate, resin layer, and absorption layer (hereinafter also referred to as “resin plate”) can be formed by, for example, melt molding or cast molding. Furthermore, if necessary, a substrate on which a resin layer (overcoat layer) is laminated can be manufactured by coating these with a coating agent such as an antireflection agent, a hard coating agent and / or an antistatic agent. it can.
  • a coating agent such as an antireflection agent, a hard coating agent and / or an antistatic agent. it can.
  • the substrate is the laminate 2
  • a resin solution containing an infrared absorber is melt-molded or cast-molded on a support substrate, and preferably applied by a method such as spin coating, slit coating, or inkjet.
  • the substrate (laminated body 2) in which the absorption layer is formed on the support substrate can be manufactured by drying and removing the solvent later and further performing light irradiation and heating as necessary.
  • melt molding a method of melt molding pellets obtained by melt-kneading a resin and an additive; a method of melt molding a resin composition containing a resin and an additive; or And a method of melt-molding pellets obtained by removing a solvent from a resin composition containing an additive, a resin and a solvent.
  • melt molding method include injection molding, melt extrusion molding, and blow molding.
  • Cast molding a method of removing a solvent by casting a resin composition containing an additive, a resin and a solvent on an appropriate support; or an additive, a photocurable resin and / or a thermosetting resin And a method of curing by a suitable method such as ultraviolet irradiation or heating.
  • the substrate can be obtained by peeling the coating film from the support after cast molding.
  • the substrate can be obtained, for example, by not peeling the coating film after cast molding. That is, in this case, the support is a support substrate.
  • the support examples include a transparent inorganic material, a steel belt, a steel drum, and a resin (eg, polyester film, cyclic olefin resin film) support.
  • a resin eg, polyester film, cyclic olefin resin film
  • the optical component such as a transparent inorganic material or resin is coated on the optical component by a method of coating the resin composition and drying the solvent, or a method of coating and curing and drying the curable composition.
  • a resin layer or an absorption layer can also be formed.
  • the amount of residual solvent in the resin plate obtained by the above method should be as small as possible.
  • the amount of the residual solvent is preferably 3% by mass or less, more preferably 1% by mass or less, and further preferably 0.5% by mass or less with respect to 100% by mass of the resin plate.
  • the residual solvent amount is in the above range, it is possible to easily obtain a resin plate that can easily exhibit a desired function, in which deformation and characteristics hardly change.
  • substrate may contain additives, such as antioxidant, a fluorescence quencher, and an absorber (example: infrared absorber, ultraviolet absorber), in the range which does not impair the effect of this invention.
  • additives such as antioxidant, a fluorescence quencher, and an absorber (example: infrared absorber, ultraviolet absorber), in the range which does not impair the effect of this invention.
  • absorber example: infrared absorber, ultraviolet absorber
  • the additive may be mixed with a resin or the like when the absorption layer or the absorption plate is produced, or may be added when a resin is synthesized.
  • the addition amount of the additive may be appropriately selected according to desired properties, but is usually 0.0001 to 50 parts by mass, preferably 0.0003 to 40 parts by mass with respect to 100 parts by mass of the resin. .
  • antioxidants examples include 2,6-di-t-butyl-4-methylphenol, 2,2′-dioxy-3,3′-di-t-butyl-5,5′-dimethyldiphenylmethane, Examples include tetrakis [methylene-3- (3,5-di-t-butyl-4-hydroxyphenyl) propionate] methane and tris (2,4-di-t-butylphenyl) phosphite.
  • Infrared absorber examples include squarylium compounds, croconium compounds, phthalocyanine compounds, naphthalocyanine compounds, polymethine compounds, cyanine compounds, tetraazaporphyrin compounds, diimonium compounds, porphyrin compounds, triaryls.
  • the infrared absorber preferably has an absorption maximum wavelength in the range of 670 to 950 nm, more preferably 680 to 900 nm, further preferably 685 to 800 nm, and particularly preferably 685 to 765 nm.
  • an absorption layer or absorption plate containing an infrared absorber having an absorption maximum wavelength in the above range the incident angle dependency of the color near red can be improved, and an excellent optical filter can be easily obtained by correcting visibility. it can.
  • the absorption maximum wavelength can be measured using a solution in which an infrared absorber is dissolved in dichloromethane.
  • the content of the infrared absorber is preferably 0.0001 to 20.0 parts by mass, more preferably 0.0002 to 15 parts by mass, with respect to 100 parts by mass of the resin when an absorbing plate is used as the substrate. Particularly preferred is 0.0003 to 10 parts by mass.
  • the resin 100 contained in the absorption layer is used.
  • the amount is preferably 0.0001 to 50 parts by mass, more preferably 0.0005 to 40 parts by mass, and particularly preferably 0.001 to 30 parts by mass with respect to parts by mass.
  • the units A and B each independently represent any of the units represented by the following formulas (I) to (IV).
  • the portion represented by a wavy line represents a binding site with the central four-membered ring of the formula (Z)
  • X, X 1 and X 2 each independently represents an oxygen atom, a sulfur atom, a selenium atom, a tellurium atom or —NR 8 —, —C (R 8 ) 2 —
  • R 1 to R 7 are each independently a hydrogen atom, halogen atom, sulfo group, hydroxyl group, cyano group, nitro group, carboxy group, phosphate group, —NR g R h group, —SR i group, —SO 2 R i group, —OSO 2 R i group or any of the following L a to L h
  • R 8 independently represents a hydrogen atom or L a to L h
  • R g and R h are each independently to represent any of a hydrogen atom, -C (O) R i groups or the following L
  • R 1 is preferably a hydrogen atom, chlorine atom, fluorine atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, cyclohexyl group, A phenyl group, a hydroxyl group, an amino group, a dimethylamino group and a nitro group, more preferably a hydrogen atom, a chlorine atom, a fluorine atom, a methyl group, an ethyl group, an n-propyl group, an isopropyl group and a hydroxyl group.
  • R 2 to R 7 are preferably each independently a hydrogen atom, chlorine atom, fluorine atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert- Butyl, cyclohexyl, phenyl, hydroxyl, amino, dimethylamino, cyano, nitro, methoxy, ethoxy, n-propoxy, n-butoxy, acetylamino, propionylamino, N- Methylacetylamino group, trifluoromethanoylamino group, pentafluoroethanoylamino group, tert-butanoylamino group, cyclohexinoylamino group, n-butylsulfonyl group, methylthio group, ethylthio group, n-propylthio group, n -Buty
  • R 8 is preferably independently a hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, cyclohexyl group, or n-pentyl group.
  • N-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group and phenyl group more preferably hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group N-butyl group, tert-butyl group and n-decyl group.
  • R 2 to R 7 may be bonded to two or three Rs on one benzene ring to form a new alicyclic group or aromatic ring having 5 or more constituent atoms.
  • the aromatic ring may have the substituent L.
  • R 2 to R 7 are each a complex of 5 or more constituent atoms containing at least one oxygen atom, nitrogen atom or sulfur atom by combining two or three Rs on one benzene ring.
  • a ring may be formed, and the heterocyclic ring may have the substituent L.
  • X, X 1 and X 2 are each independently preferably an oxygen atom, a sulfur atom, —NR 8 —, —C (R 8 ) 2 —, and X in formula (I) is particularly preferably Is an oxygen atom or a sulfur atom, and X in the formula (II) is particularly preferably —NR 8 —.
  • the squarylium-based compound can be represented by the following formula (Z1) or a resonance structure such as the following formula (Z2). That is, the difference between the following formula (Z1) and the following formula (Z2) is only the structure description method, and both represent the same compound.
  • the structure of the squarylium compound is represented by a description method such as the following formula (Z1).
  • the compound represented by the following formula (Z1) and the compound represented by the following formula (Z3) can be regarded as the same compound.
  • the left and right units bonded to the central four-membered ring may be the same or different as long as the structures are represented by the formulas (I) to (IV). However, it is preferable that they are the same including the substituents in the unit because they are easy to synthesize.
  • examples of the compound represented by the formula (Z) include compounds represented by the following formulas (ZA) to (ZJ).
  • Specific examples of the compound represented by the formula (Z) include compounds (z-1) to (z-94) described in Tables 1 to 5 below.
  • the phthalocyanine compound is not particularly limited, but a compound having an absorption maximum wavelength in the above range is preferable.
  • Examples of such phthalocyanine compounds include compounds represented by the following formula (V) (hereinafter also referred to as “compound (V)”).
  • M represents a substituted metal atom containing two hydrogen atoms, two monovalent metal atoms, a divalent metal atom, or a trivalent or tetravalent metal atom
  • the amino group, amide group, imide group and silyl group may have the substituent L
  • L 2 represents a hydrogen atom or any of the following La ′ to Le ′
  • L 3 represents a hydroxyl group or any of the following La ′ to Le ′
  • L 4 represents any one of the following La ′ to Le ′
  • L 1 is (L a ′ ) an aliphatic hydrocarbon group having 1 to 9 carbon atoms which may have a substituent L ′′ , (L b ′ ) a halogen-substituted alkyl group having 1 to 9 carbon atoms which may have a substituent L ′′ ;
  • the substituent L ′′ represents a halogen atom, a sulfo group, a hydroxyl group, a cyano group, a nitro group, a carboxy group, a phosphoric acid group, an amino group, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, a carbon number of 1 At least one selected from the group consisting of a halogen-substituted alkyl group having 9 to 9, an alicyclic hydrocarbon group having 3 to 14 carbon atoms, an aromatic hydrocarbon group having 6 to 14 carbon atoms, and a heterocyclic group having 3 to 14 carbon atoms. It is a seed.
  • R x and R y are carbon atoms
  • the amino group, amide group, imide group and silyl group may have the substituent L, and L 1 to L 4 have the same meanings as L 1 to L 4 defined in the formula (V).
  • examples of the amino group which may have a substituent L include an amino group, an ethylamino group, a dimethylamino group, a methylethylamino group, a dibutylamino group, A diisopropylamino group is mentioned.
  • examples of the amide group which may have a substituent L include an amide group, a methylamide group, a dimethylamide group, a diethylamide group, a dipropylamide group, and diisopropylamide.
  • examples of the imide group which may have a substituent L include, for example, an imide group, a methylimide group, an ethylimide group, a diethylimide group, a dipropylimide group, and a diisopropylimide.
  • Group and dibutylimide group examples of the imide group which may have a substituent L include, for example, an imide group, a methylimide group, an ethylimide group, a diethylimide group, a dipropylimide group, and a diisopropylimide.
  • Group and dibutylimide group examples of the imide group which may have a substituent L include, for example, an imide group, a methylimide group, an ethylimide group, a diethylimide group, a dipropylimide group, and a diisopropylimide.
  • Group and dibutylimide group examples of the imide group which may have a substituent L
  • examples of the silyl group which may have a substituent L include a trimethylsilyl group, a tert-butyldimethylsilyl group, a triphenylsilyl group, and a triethylsilyl group. It is done.
  • —SL 2 includes, for example, a thiol group, a methyl sulfide group, an ethyl sulfide group, a propyl sulfide group, a butyl sulfide group, an isobutyl sulfide group, sec-butyl.
  • Examples thereof include a sulfide group, a tert-butyl sulfide group, a phenyl sulfide group, a 2,6-di-tert-butylphenyl sulfide group, a 2,6-diphenylphenyl sulfide group, and a 4-cumylphenyl sulfide group.
  • —SS-L 2 is, for example, a disulfide group, a methyl disulfide group, an ethyl disulfide group, a propyl disulfide group, a butyl disulfide group, an isobutyl disulfide group, sec-butyl.
  • Examples thereof include a disulfide group, a tert-butyl disulfide group, a phenyl disulfide group, a 2,6-di-tert-butylphenyl disulfide group, a 2,6-diphenylphenyl disulfide group, and a 4-cumylphenyl disulfide group.
  • examples of —SO 2 —L 3 include a sulfo group, a mesyl group, an ethylsulfonyl group, an n-butylsulfonyl group, and a p-toluenesulfonyl group.
  • —N ⁇ N—L 4 includes, for example, a methylazo group, a phenylazo group, a p-methylphenylazo group, and a p-dimethylaminophenylazo group.
  • examples of the monovalent metal atom include Li, Na, K, Rb, and Cs.
  • examples of the divalent metal atom include Be, Mg, Ca, Ba, Ti, Cr, Mn, Fe, Ru, Co, Rh, Ni, Pd, Pt, Cu, Zn, Cd, Hg, Sn and Pb are mentioned.
  • examples of the substituted metal atom containing a trivalent metal atom include Al—F, Al—Cl, Al—Br, Al—I, Ga—F, Ga—Cl, Ga—Br, and Ga—I.
  • examples of the substituted metal atom containing a tetravalent metal atom include TiF 2 , TiCl 2 , TiBr 2 , TiI 2 , ZrCl 2 , HfCl 2 , CrCl 2 , SiF 2 , SiCl 2 , SiBr 2 , and SiI.
  • the M is a divalent transition metal, trivalent or tetravalent metal halide or tetravalent metal oxide belonging to Groups 5 to 11 of the periodic table and belonging to the 4th to 5th periods.
  • Cu, Ni, Co, and VO are particularly preferable because high visible light transmittance and stability can be achieved.
  • a method of synthesizing the phthalocyanine compound by a cyclization reaction of a phthalonitrile derivative such as the following formula (VI) is generally known.
  • the obtained phthalocyanine compounds are represented by the following formulas (VII-1) to (VII) It is a mixture of four isomers such as VII-4).
  • VII-4 is a mixture of four isomers such as VII-4.
  • Only one isomer is illustrated for one phthalocyanine compound, but the other three isomers can be used in the same manner. These isomers can be separated and used as necessary, but in this specification, isomer mixtures are collectively handled.
  • polymethine compounds Although it does not restrict
  • examples of such polymethine compounds include compounds represented by the following formulas (Sa) to (Sc).
  • a ⁇ represents a monovalent anion.
  • the monovalent anion is not particularly limited, and for example, Cl ⁇ , Br ⁇ , I ⁇ , PF 6 ⁇ , ClO 4 ⁇ , NO 3 ⁇ , BF 4 ⁇ , SCN ⁇ , CH 3 COO ⁇ , CH 3 CH 2 COO ⁇ , methyl sulfonate ion, tetrafluoromethyl sulfonate ion, naphthalene sulfonate ion, anthracene sulfonate ion, N (SO 2 CF 3 ) 2 ⁇ , B (C 6 F 5 ) 4 ⁇ , C 6 H 5 SO 3 ⁇ , toluenesulfonic acid ion, CF 3 COO ⁇ , CF 3 CF 2 COO ⁇ , nickel dithiolate complex ion, and copper dithiolate complex ion.
  • the plural D's independently represent a carbon atom, a nitrogen atom, an oxygen atom or a sulfur atom.
  • a plurality of R a to R i are each independently a hydrogen atom, halogen atom, hydroxyl group, carboxy group, nitro group, amino group, amide group, imide group, cyano group, silyl group, -L 1 , -SL 2 , -SS-L 2, -SO 2 -L 3, are each -NR g R h group (R g and R h independently represent the following L 2 or -C (O) R i groups, R i is It represents the following L 2), -.
  • N N-L 4 or,, R b and R c, R d and R e, R e and R f, R f and R g, R g and R h and R h And a group selected from the groups represented by the following formulas (a) to (h) to which at least one combination of R 1 and R i is bonded.
  • D- (R b ) (R c ) is described in this way for convenience, and D is not necessarily limited to R b and R c. Are not connected.
  • D is a nitrogen atom
  • one of R b and R c does not exist
  • D is an oxygen atom
  • both R b and R c do not exist
  • D is a sulfur atom
  • R b and R c Are both absent or the sum of R b and R c is 4.
  • the amino group, amide group, imide group and silyl group are an aliphatic hydrocarbon group having 1 to 12 carbon atoms, a halogen-substituted alkyl group having 1 to 12 carbon atoms, an alicyclic hydrocarbon group having 3 to 14 carbon atoms, Selected from the group consisting of C6-C14 aromatic hydrocarbon groups, C3-C14 heterocyclic groups, halogen atoms, sulfo groups, hydroxyl groups, cyano groups, nitro groups, carboxy groups, phosphate groups, and amino groups It may have at least one kind of substituent L ′.
  • L 1 is any one of the following L a to L i .
  • L 2 represents either L a ⁇ L e in the hydrogen atom or the L 1
  • L 3 represents either L a ⁇ L e in the hydrogen atom or the L 1
  • L 4 represents represents any of L a ⁇ L e in the L 1.
  • R x and R y represent a carbon atom
  • the group and the silyl group may have the substituent L ′.
  • Z a to ⁇ Z c and Y a ⁇ Y d each independently represent a hydrogen atom, a halogen atom, a hydroxyl group, a carboxyl group, a nitro group, an amino group, an amido group, an imido group, a cyano group, a silyl group, -L 1; - S—L 2 ; —SS—L 2 ; —SO 2 —L 3 ; —NR g R h group (R g and R h each independently represents L 2 or —C (O) R i group; i represents L 2); -..
  • N N-L 4 (L 1 ⁇ L 4 are the same meaning as L 1 ⁇ L 4 in R a ⁇ R i); Z each other or the Y between An aromatic hydrocarbon group having 6 to 14 carbon atoms formed by bonding two adjacent to each other; a nitrogen atom or an oxygen formed by bonding two adjacent to each other among Z or Y
  • a 5- to 6-membered alicyclic hydrocarbon group which may contain at least one atom or sulfur atom;
  • a heteroaromatic hydrocarbon group having 3 to 14 carbon atoms and comprising at least one nitrogen atom, oxygen atom or sulfur atom formed by bonding two adjacent members of each other,
  • the hydrogen group, alicyclic hydrocarbon group and heteroaromatic hydrocarbon group may have an aliphatic hydrocarbon group having 1 to 9 carbon atoms or a halogen atom, and the amino group, amide group, imide group and silyl group
  • the group may have the substituent L ′.
  • Examples of the aromatic hydrocarbon group having 6 to 14 carbon atoms formed by bonding Z or Y in Z a to Z c and Y a to Y d include, for example, phenyl group, tolyl group Xylyl group, mesityl group, cumenyl group, 1-naphthyl group, 2-naphthyl group, anthracenyl group, phenanthryl group, acenaphthyl group, phenalenyl group, tetrahydronaphthyl group, indanyl group, biphenylyl group.
  • the alicyclic hydrocarbon group include cycloalkyl groups such as cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group and cyclooctyl group; polycyclic alicyclic groups such as norbornane group and adamantane group; tetrahydrofuran, pyrroline And heterocyclic rings such as a group consisting of pyrrolidine, imidazoline, piperidine, piperazine and morpholine.
  • heteroaromatic hydrocarbon group having 3 to 14 carbon atoms formed by bonding Z or Y in Z a to Z c and Y a to Y d include, for example, furan, thiophene, Pyrrole, pyrazole, imidazole, triazole, oxazole, oxadiazole, thiazole, thiadiazole, indole, indoline, indolenine, benzofuran, benzothiophene, carbazole, dibenzofuran, dibenzothiophene, pyridine, pyrimidine, pyrazine, pyridazine, quinoline, isoquinoline, acridine Or the group which consists of phenazine is mentioned.
  • Examples of the amino group that may have the substituent L ′ include an amino group, an ethylamino group, a dimethylamino group, a methylethylamino group, a dibutylamino group, and a diisopropylamino group.
  • Examples of the amide group that may have the substituent L ′ include an amide group, a methylamide group, a dimethylamide group, a diethylamide group, a dipropylamide group, a propyltrifluoromethylamide group, a diisopropylamide group, and a dibutylamide group. , ⁇ -lactam group, ⁇ -lactam group, ⁇ -lactam group, and ⁇ -lactam group.
  • Examples of the imide group that may have the substituent L ′ include an imide group, a methylimide group, an ethylimide group, a diethylimide group, a dipropylimide group, a diisopropylimide group, and a dibutylimide group.
  • Examples of the silyl group that may have the substituent L ′ include a trimethylsilyl group, a tert-butyldimethylsilyl group, a triphenylsilyl group, and a triethylsilyl group.
  • Examples of —SL 2 include thiol group, methyl sulfide group, ethyl sulfide group, propyl sulfide group, butyl sulfide group, isobutyl sulfide group, sec-butyl sulfide group, tert-butyl sulfide group, phenyl sulfide group, Examples include 2,6-di-tert-butylphenyl sulfide group, 2,6-diphenylphenyl sulfide group, and 4-cumylphenyl sulfide group.
  • Examples of —SS-L 2 include a disulfide group, a methyl disulfide group, an ethyl disulfide group, a propyl disulfide group, a butyl disulfide group, an isobutyl disulfide group, a sec-butyl disulfide group, a tert-butyl disulfide group, a phenyl disulfide group, Examples include 2,6-di-tert-butylphenyl disulfide group, 2,6-diphenylphenyl disulfide group, and 4-cumylphenyl disulfide group.
  • Examples of —SO 2 -L 3 include a sulfo group, a mesyl group, an ethylsulfonyl group, an n-butylsulfonyl group, and a p-toluenesulfonyl group.
  • Examples of the —N ⁇ N—L 4 include a methylazo group, a phenylazo group, a p-methylphenylazo group, and a p-dimethylaminophenylazo group.
  • polymethine compounds include (s-1) to (s-24) shown in Table 10 below having the basic skeleton represented by the formulas (Sa) to (Sc). Can be mentioned.
  • Y b according across the column and Y c "trimethylene" is, Y b and Y c are attached form a trimethylene group, the formula (s In -b), it means that a 6-membered ring is formed together with the carbon bonded to Z b , the carbon bonded to Y b , and the carbon bonded to Y c .
  • trimethylene the formula (s In -b)
  • the infrared absorber may be synthesized by a generally known method.
  • Japanese Patent No. 3366697 Japanese Patent No. 2846091, Japanese Patent No. 2864475, Japanese Patent No. 3703869, Japanese Patent Laid-Open No. Sho 60- No. 228448, Japanese Patent Laid-Open No. 1-146846, Japanese Patent Laid-Open No. 1-222860, Japanese Patent No. 4081149, Japanese Patent Laid-Open No. 63-122404, “Phthalocyanine—Chemistry and Function” (IPC, 1997) JP 2007-169315 A, JP 2009-108267 A, JP 2010-241873 A, JP 3699464 A, JP 4740631 A, International Publication No. 2013/054864, International Publication No. 2015 / Described in No. 025779, International Publication No. 2017/051867, etc. It can be obtained by reference to the methods described in Les.
  • UV absorber examples include azomethine compounds, indole compounds, triazole compounds, triazine compounds, oxazole compounds, merocyanine compounds, cyanine compounds, naphthalimide compounds, oxadiazole compounds, and oxazine compounds.
  • examples thereof include compounds, oxazolidine compounds, naphthalic acid compounds, styryl compounds, anthracene compounds, and cyclic carbonyl compounds.
  • the ultraviolet absorber preferably has an absorption maximum wavelength in the range of 350 to 410 nm, more preferably 360 to 405 nm, and still more preferably 370 to 400 nm.
  • an optical filter that satisfies the requirement (K) can be easily obtained.
  • the absorption maximum wavelength can be measured using a solution in which an ultraviolet absorber is dissolved in dichloromethane.
  • the substrate has the absorbing layer.
  • the absorption layer may be included in one layer or two or more layers in the substrate. When two or more layers are included, the absorption layer may be continuous or may be interposed through another layer, for example, may be present only on one surface side of the support substrate. May be present on both sides.
  • the substrate preferably has a wavelength of 670 to 950 nm, more preferably a wavelength of 680 to 900 nm, and still more preferably a wavelength of 685 to, from the viewpoint that an optical filter that satisfies the requirements (H) and (J) can be easily obtained.
  • the absorption maximum wavelength is 800 nm, particularly preferably 690 to 765 nm.
  • the substrate contains the infrared absorber
  • the incident angle dependency of the color near red is further improved, and an optical filter that excels in visibility correction can be easily obtained.
  • Infrared absorbers are inherent in the wavelength dependence of the extinction coefficient k and are dissolved in dichloromethane in order to maintain a high transmittance with visible light and to secure an absorption band with excellent visibility correction by absorption.
  • the infrared absorber (DA) and the infrared absorber (DB) may be appropriately selected from infrared absorbers having a wavelength within a predetermined range from the infrared absorber, and are not particularly limited, but Japanese Patent No. 336697, Japanese Patent No. 2846091, Japanese Patent No. 2864475, Japanese Patent No. 3703869, Japanese Patent Laid-Open No. 60-228448, Japanese Patent Laid-Open No. 1-146846, Japanese Patent Laid-Open No. 1-228960, Japanese Patent No.
  • JP-A-63-124054 “Phthalocyanine—Chemistry and Function” (IPC, 1997), JP2007-169315, JP2009-108267, JP2010-241873, Patent No. 3699464, Japanese Patent No. 4740631, International Publication No. 2013/054864, Country Publication No. 2015/025779, may be selected dyes described in WO 2017/051867 or the like.
  • the substrate preferably satisfies the following requirements (N) or (O), and preferably satisfies the following requirements (N) and (O).
  • the transmittance of non-polarized light having a wavelength of 770 nm is more preferably 50% or less, and still more preferably 46% or less.
  • the substrate has the above-described transmittance, it is possible to reduce red image defects due to light of 770 nm which is difficult to be seen by human eyes, and an optical filter excellent in visibility correction can be easily obtained.
  • the average transmittance of unpolarized light having a wavelength of 780 to 800 nm is more preferably 70% or more, further preferably 75% or more, more preferably 77% or more, and particularly preferably 90% or more.
  • the substrate has the above-described transmittance, an increase in temperature of a solid-state imaging device, a sensor module, a camera module, or the like due to absorption of near-infrared rays that do not require an optical filter can be further reduced.
  • the substrate preferably has low absorption characteristics with respect to infrared rays, and preferably satisfies the following requirement (R).
  • the average transmittance is more preferably 80% or more, still more preferably 85% or more, and particularly preferably 89% or more.
  • the substrate has the ultraviolet absorber and has a non-polarized light transmittance of 50% when measured from the vertical direction of the substrate in the wavelength range of 390 to 430 nm.
  • the ultraviolet absorber By having an optical characteristic with a transmittance of 50% in this range, the incident angle dependency of the color near blue is improved, and an excellent optical filter can be easily obtained by visual sensitivity correction.
  • This filter may have a dielectric multilayer film on one surface of the substrate as shown in FIG. 1A, and a plurality of dielectric multilayer films as shown in FIGS. 1B to 1D. You may have.
  • the dielectric multilayer film a dielectric multilayer film obtained by laminating a plurality of layers appropriately selected from a high refractive index material layer, a medium refractive index material layer, and a low refractive index material layer, a structure in which the refractive index is continuously changed And the like.
  • the high refractive index material layer As a material constituting the high refractive index material layer, a material having a refractive index of 2.0 or more can be used, and a material having a refractive index of 2.0 to 3.6 is usually selected.
  • the refractive index represents a value at 550 nm.
  • Examples of the material constituting the high refractive index material layer include, for example, titanium oxide, zirconium oxide, tantalum oxide, niobium oxide, lanthanum oxide, zinc oxide, zinc sulfide, barium titanate, silicon and the like as main components, hydrogen, oxidation Contains a small amount of titanium, niobium oxide, hafnium oxide, tin oxide and / or cerium oxide (for example, 0 to 10% by mass with respect to the main component); cyclic (poly) olefin resin, aromatic polyether type Resin, polyimide resin, polycarbonate resin, polyester resin, polyamide (aramid) resin, polysulfone resin, polyethersulfone resin, polyparaphenylene resin, polyamideimide resin, polyethylene naphthalate resin, fluorine Aromatic polymer resin, (modified) acrylic resin, epoxy resin Silsesquioxane UV curable resin, maleimide resin, alicyclic epoxy thermosetting resin, polyether ether ketone
  • a material having a refractive index of less than 1.6 can be used, and a material having a refractive index of 1.2 to less than 1.6 is usually selected.
  • examples of such materials include silica, lanthanum fluoride, magnesium fluoride, sodium hexafluoride; cyclic (poly) olefin resin, aromatic polyether resin, polyimide resin, polycarbonate resin, and polyester resin.
  • polyamide (aramid) resin polysulfone resin, polyethersulfone resin, polyparaphenylene resin, polyamideimide resin, polyethylene naphthalate resin, fluorinated aromatic polymer resin, (modified) acrylic Resin, epoxy resin, silsesquioxane UV curable resin, maleimide resin, alicyclic epoxy thermosetting resin, polyether ether ketone resin, polyarylate resin, allyl ester curable resin, acrylic UV Curable resin, vinyl UV curing Resin such as mold resin and resin mainly composed of silica formed by sol-gel method; silica, alumina, lanthanum fluoride, magnesium fluoride and / or aluminum hexafluoride sodium dispersed in the resin .
  • a material having a refractive index of 1.6 or more and less than 2.0 can be used as the material constituting the medium refractive index material layer.
  • examples of such materials include alumina, bismuth oxide, europium oxide, ytterium oxide, ytterbium oxide, samarium oxide, indium oxide, magnesium oxide, and molybdenum oxide; these materials and the material of the high refractive index material layer and / or What mixed the material of the said low refractive index material layer; What mixed the material of the said high refractive index material layer and the material of the said low refractive index material layer is mentioned.
  • the dielectric multilayer film may have a metal layer and / or a semiconductor layer of about 1 to 100 nm.
  • a material constituting these layers a material having a refractive index of 0.1 to 5.0 can be used. Examples of such materials include gold, silver, copper, zinc, aluminum, tungsten, titanium, magnesium, nickel, silicon, silicon hydride, and germanium. Since these metal layers and semiconductor layers tend to have high extinction coefficients of wavelengths in the visible light region, when these layers are provided, they are preferably thin layers having a thickness of about 1 to 20 nm.
  • the method for laminating the high refractive index material layer, the medium refractive index material layer and / or the low refractive index material layer is not particularly limited as long as a dielectric multilayer film in which these material layers are laminated is formed.
  • a film can be formed.
  • laminating a resin-containing layer it can be formed by melt molding or cast molding, preferably by spin coating, dip coating, slit coating, gravure coating, etc., in the same manner as the above-described substrate molding method.
  • the optical properties of the dielectric multilayer film can be adjusted by appropriately selecting the material type constituting each layer, the thickness of each layer, the order of lamination, the number of laminations, and the like.
  • the dielectric multilayer film preferably has a high reflectance for infrared rays having a wavelength of 1200 to 1600 nm or less, and more preferably satisfies the following requirements (P) and (Q).
  • the average transmittance of non-polarized light when measured from the vertical direction of the dielectric multilayer film is 10% or less.
  • the dielectric multilayer film since it can be shielded by reflecting light instead of absorbing it, it is possible to suppress an increase in temperature of an imaging device or a module, and to suppress dark current.
  • the average transmittance is preferably 6% or less, more preferably 2% or less.
  • the average transmittance is preferably as low as possible. For example, the lower limit is 0%.
  • the average transmittance of non-polarized light when measured from the vertical direction of the dielectric multilayer film at a wavelength of 1200 to 1600 nm is 10% or less.
  • a filter that satisfies the requirement (Q) even when a subject having a LIDAR using a wavelength of 1200 to 1600 nm is imaged, a solid-state imaging device, a sensor module, and a camera module are used by the light emitted by the subject. Etc. can be suppressed.
  • the average transmittance is preferably 6% or less, more preferably 2% or less.
  • the average transmittance is preferably as low as possible. For example, the lower limit is 0%.
  • only one dielectric multilayer film may satisfy the requirements (P) and (Q), but more preferably all dielectric multilayers included in the optical filter. It is preferable to satisfy the requirements (P) and (Q) as the characteristics of the film.
  • the dielectric multilayer film satisfying the requirements (P) and (Q) is a material type constituting the high refractive index material layer, the medium refractive index material layer and the low refractive index material layer, the thickness of each layer, the order of lamination,
  • the number of stacked layers can be formed by appropriately selecting based on the equivalent admittance Y E of the dielectric multilayer film including the substrate.
  • the equivalent admittance Y E of the antireflection layer composed of the L layer provided on the incident side of the optical filter is expressed by the following equation.
  • M j is the characteristic matrix of the layer positioned first at the first film on which light is incident and is positioned jth toward the substrate side
  • n m is the refractive index of the substrate.
  • n j is the refractive index of the j-th layer
  • d j is the physical film thickness of the j-th layer
  • ⁇ is the wavelength of light
  • i represents a complex number
  • the equivalent admittance Y ′ E of the antireflection layer composed of the q layer provided on the emission side of the optical filter is expressed by the following equation.
  • M j ′ is the characteristic matrix of the layer located at the j-th layer toward the substrate side, with the last layer (outgoing side outermost layer) from which light is emitted first, and n m is the substrate Is the refractive index.
  • M j ′ is represented by the following equation.
  • n j is the refractive index of the j-th layer
  • d j is the physical film thickness of the j-th layer
  • ⁇ is the wavelength of light
  • i represents a complex number
  • optical thin film design software for example, manufactured by Essential Macleod, Thin Film Center
  • the equivalent admittance in the visible light region where the antireflection function is desired to be expressed is reduced.
  • the parameters should be set so that high admittance can be obtained.
  • the equivalent admittance of the dielectric multilayer film including the substrate and the refractive index of air represented by the following equations:
  • the absolute value ( ⁇ n) of the difference is preferably 0.4 or less, more preferably 0.3 or less, and still more preferably 0.2 or less at the wavelength at which the antireflection function is desired.
  • the wavelength which wants to express a reflective function Preferably it is 2.0 or more, More preferably, it is 10 or more, More preferably, it is 20 or more.
  • a thin film layer having an optical thickness of 5 to 80 nm is formed.
  • it has 4 layers or more, more preferably 10 layers or more, and particularly preferably 14 layers or more.
  • the optical film thickness is a physical quantity expressed by (physical film thickness of layer) ⁇ (real part of refractive index of layer).
  • the layer with an optical film thickness of 250 to 400 nm is preferably 14 layers or more, more preferably 16 layers or more, and still more preferably. It is desirable to have 18 or more layers.
  • the layer having an optical film thickness of 180 to 275 nm corresponding to is preferably 14 layers or more, more preferably 16 layers or more, and still more preferably 18 layers or more.
  • the requirement (A), requirement (B), and requirement (C) can be satisfied by appropriately combining a dielectric multilayer film having both equivalent admittance with low infrared transmittance at a wavelength of 720 to 1100 nm and a substrate.
  • the dielectric multilayer film and the reflectance R have a relationship represented by the following formula.
  • n 0 represents the refractive index of the incident medium
  • () * represents the complex conjugate in ().
  • the equivalent admittance of the dielectric multilayer film including the substrate of the optical filter can be obtained by measuring the reflectance R in the air of the optical filter.
  • the required equivalent admittance is a conjugate solution, and it is preferable that ⁇ n is in the above range for both conjugate solutions.
  • this filter is provided between the substrate and the dielectric multilayer film, on the surface opposite to the surface on which the dielectric multilayer film is provided, or on the substrate of the dielectric multilayer film.
  • Antireflection layer, hard coat film, antistatic film, etc. for the purpose of improving the surface hardness of the substrate and dielectric multilayer film, improving chemical resistance, antistatic, scratching, etc.
  • the functional film can be provided as appropriate.
  • This filter may include one layer of the functional film or two or more layers. When the present filter includes two or more functional films, the filter may include two or more similar layers or two or more different layers.
  • the method of laminating the functional film is not particularly limited, but a coating agent such as an antireflection agent, a hard coating agent and / or an antistatic agent is melt-molded or cast-molded on the substrate or the dielectric multilayer film in the same manner as described above.
  • a coating agent such as an antireflection agent, a hard coating agent and / or an antistatic agent is melt-molded or cast-molded on the substrate or the dielectric multilayer film in the same manner as described above.
  • the method etc. can be mentioned.
  • it can also be produced by applying a curable composition containing the coating agent or the like on a substrate or a dielectric multilayer film with a bar coater or the like and then curing it by ultraviolet irradiation or the like.
  • the coating agent examples include ultraviolet (UV) / electron beam (EB) curable resins and thermosetting resins. Specifically, vinyl compounds, urethanes, urethane acrylates, acrylates, epoxy And epoxy acrylate resins. Examples of the curable composition containing these coating agents include vinyl, urethane, urethane acrylate, acrylate, epoxy, and epoxy acrylate curable compositions.
  • UV ultraviolet
  • EB electron beam
  • the curable composition may contain a polymerization initiator.
  • a polymerization initiator a known photopolymerization initiator or thermal polymerization initiator can be used, and a photopolymerization initiator and a thermal polymerization initiator may be used in combination.
  • a polymerization initiator may be used individually by 1 type, and may use 2 or more types.
  • the mixing ratio of the polymerization initiator is preferably 0.1 to 10% by mass, more preferably 0.5 to 10% by mass, when the total amount of the curable composition is 100% by mass. More preferably, it is 1 to 5% by mass.
  • a functional film such as an antireflection layer, a hard coat film, or an antistatic film having a desired hardness is easily obtained with excellent curing characteristics and handleability of the curable composition. be able to.
  • organic solvent may be added to the curable composition, and a known solvent can be used as the organic solvent.
  • organic solvents include alcohols such as methanol, ethanol, isopropanol, butanol and octanol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; ethyl acetate, butyl acetate, ethyl lactate, ⁇ -butyrolactone, propylene Esters such as glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate; Ethers such as ethylene glycol monomethyl ether and diethylene glycol monobutyl ether; Aromatic hydrocarbons such as benzene, toluene and xylene; Dimethylformamide, dimethylacetamide, N- Examples include amides such as methylpyrrolidone. These solvents may be used alone or in combination of two
  • the thickness of the functional film is preferably 0.9 to 30 ⁇ m, more preferably 0.9 to 20 ⁇ m, and particularly preferably 0.9 to 5 ⁇ m.
  • the surface of the substrate, the functional film or the dielectric multilayer film is subjected to corona treatment.
  • Surface treatment such as plasma treatment may be performed.
  • This filter is thin, has excellent visibility correction characteristics, has cut characteristics over the mid-infrared region, and has a dark current suppressing effect. Therefore, it is useful for correcting the visibility of a solid-state imaging device such as a camera module.
  • a solid-state imaging device such as a camera module.
  • image sensors with black silicon and organic photoelectric conversion elements digital still cameras, mobile phone cameras, smartphone cameras, digital video cameras, PC cameras, surveillance cameras, automotive cameras, TVs, car navigation systems, mobile phones It is useful for information terminals, personal computers, video games, portable game machines, fingerprint authentication systems, ambient light sensors, distance measurement sensors, iris authentication systems, face authentication systems, distance measurement cameras, digital music players, and the like.
  • FIG. 5 shows an example of the arrangement of each member when this filter is used in an imaging device or various modules.
  • the filter 1 is configured with a lens 32 and an image sensor (image sensor) 24.
  • the optical filter 1 may be positioned in front of the lens as shown in FIG. 5A or may be positioned in the rear of the lens as shown in FIG. Further, this filter may be used in a lensless solid-state imaging device or module using an optical element 33 having a role as a lens such as a Fresnel zone plate or a Fresnel lens as shown in FIG.
  • Examples of the camera module and sensor module include this filter, an image sensor, a focus adjustment mechanism, a phase detection mechanism, a distance measurement mechanism, an iris authentication mechanism, a vein authentication mechanism, a face authentication mechanism, a blood flow meter, and an oxidation type.
  • a device that includes a reduced hemoglobin meter, a vegetation index meter, and the like and outputs an image or information as an electrical signal can be used.
  • Such a module may have a configuration having a lens as shown in FIG. 5, or may have a configuration without a lens as shown in FIG.
  • a photoelectric conversion device that converts light of a specific wavelength into electric charge, such as silicon, black silicon, or an organic photoelectric conversion film, is used.
  • This filter is suitably used for applications that use a solid-state imaging device such as black silicon or an organic photoelectric conversion film that is difficult to suppress dark current.
  • Black silicon You may use black silicon for the light-receiving part of the imaging device using this filter.
  • Black silicon can be obtained, for example, by forming micro spikes on the silicon surface by irradiating a silicon wafer with laser in a specific atmosphere.
  • black silicon is preferably used in an imaging device using near infrared light because the light receiving sensitivity in the near infrared region is higher than when using a silicon photodiode. Examples of commercially available CMOS products using black silicon include the XQE series from SiOnyx.
  • Organic photoelectric conversion film may be used for the light receiving portion of the imaging device using this filter.
  • the organic photoelectric conversion film is an organic film that absorbs light of a specific wavelength and generates current or voltage.
  • Image sensors using silicon photodiodes have absorption in the visible or near-infrared region, so it is necessary to attenuate light using a color filter for each pixel. Since a pixel having sensitivity can be manufactured, it is unnecessary to attenuate light, which is more preferable in terms of improving color reproducibility.
  • An imaging device using an organic photoelectric conversion film can be obtained by a method described in International Publication No. 2016/117181, International Publication No. 2017/0777790, or the like.
  • the dark current is a current generated in the image sensor even when no light is applied to the image sensor, and is output as a random electrical signal. Therefore, an image defect is caused as noise.
  • the gap of the photoelectric conversion element is small, the fact that electrons in the valence band are thermally excited and easily distributed in the conduction band causes dark current generation.
  • the dark current varies depending on the structure and material of the imaging device and various modules, but may be approximated by the following equation, for example.
  • I (t) dark current
  • C constant related to the area of the pixel
  • T absolute temperature
  • Eg energy band gap of photoelectric conversion element
  • k Boltzmann constant
  • this filter has high reflection characteristics over a wide range in the infrared region, and can suppress a temperature rise due to external light, and thus is considered to have a dark current suppressing effect.
  • Part means “part by mass” unless otherwise specified.
  • measurement method of each physical property value and the evaluation method of the physical property are as follows.
  • the molecular weight of the resin was determined by using a GPC apparatus (HLC-8220 type, column: TSKgel ⁇ -M, developing solvent: THF) manufactured by Tosoh Corporation, and the weight average molecular weight (Mw) and number average molecular weight (Mn) in terms of standard polystyrene. It was measured.
  • Tg Glass transition temperature
  • DSC6200 differential scanning calorimeter
  • the transmittance in each wavelength region of the optical filter was measured using a spectrophotometer (U-4100) manufactured by Hitachi High-Technologies Corporation.
  • the transmittance when measured from the vertical direction of the optical filter is that the light 1 incident on the surface of the optical filter 1 from the vertical direction and transmitted in the vertical direction as shown in FIG. Is measured with a spectrophotometer 6 and the transmittance when measured from an angle of 30 ° with respect to the vertical direction of the optical filter is as shown in FIG.
  • the light 5 ′ was incident from an angle of 30 °, and the light 5 ′ transmitted at an angle of 30 ° with respect to the vertical direction was measured with a spectrophotometer 6.
  • the average transmittance at wavelengths A to Bnm was measured at each wavelength of 1 nm from Anm to Bnm, and the total transmittance was calculated as the number of measured transmittances (wavelength range, B ⁇ A + 1). ) was calculated by dividing by.
  • the spectral transmittance of the dielectric multilayer film was calculated based on the refractive index of the substrate, the refractive index of each layer of the dielectric multilayer film, the extinction coefficient, and the film thickness of each layer, using the optical thin film design software Essential Macleod. For the transmittance of the non-polarized light, a value calculated from the average of the S-polarized light transmittance and the P-polarized light transmittance was used.
  • ⁇ Spectral reflectance> The reflectance in each wavelength region of the optical filter was measured using a spectrophotometer (U-4100) manufactured by Hitachi High-Technologies Corporation.
  • the reflectance of light incident from an angle of 5 ° with respect to the vertical direction of the optical filter is the light reflected by the light incident at an angle of 5 ° with respect to the vertical direction of the optical filter 1 as shown in FIG. 11 was measured with a spectrophotometer 6.
  • the average reflectance of wavelengths A to Bnm was measured at 1 nm increments from Anm to Bnm, and the total of the reflectances was calculated as the number of measured reflectances (wavelength range, B ⁇ A + 1). ) was calculated by dividing by.
  • As the reflectance of the non-polarized light a value calculated from the average of the S-polarized reflectance and the P-polarized reflectance was used.
  • Luminer Ace LA-150TX and Light Guide QLGC1-8L1000-R18 manufactured by Hayashi Hokki Co., Ltd. are used as the light source, and the light source (the tip of the light guide) is fixed at a position 2 cm away from the image sensor.
  • the built-in image sensor in DSC-WX10 manufactured by Sony Corporation is used, and the digital thermometer TX-10 manufactured by Yokogawa Measurement Co., Ltd. is used as the thermometer.
  • the later temperature was measured. Evaluation is that the temperature suppression effect is 4.5 ° C. or more than the temperature rise measured in the state where the optical filter is not set in the environment of room temperature 23 ° C. and humidity 60%. The thing was set as x.
  • the infrared absorbing dye used in the following examples was synthesized by a generally known method.
  • Examples of the synthesis method include Japanese Patent No. 336697, Japanese Patent No. 2846091, Japanese Patent No. 2864475, Japanese Patent No. 3703869, Japanese Patent Laid-Open No. 60-228448, Japanese Patent Laid-Open No. 1-146846, Kaihei 1-2228960, Japanese Patent No. 4081149, JP-A-63-124054, “Phthalocyanine—Chemistry and Function” (IPC, 1997), JP-A 2007-169315, JP-A 2009- Examples include methods described in Japanese Patent No. 108267, Japanese Patent Application Laid-Open No. 2010-241873, Japanese Patent No. 3699464, and Japanese Patent No. 4740631.
  • Dodec-3-ene hereinafter also referred to as “DNM”) 100 parts, 1-hexene (molecular weight regulator) 18 parts, and toluene (ring-opening polymerization solvent) 300 parts nitrogen-substituted reaction The vessel was charged and the solution was heated to 80 ° C.
  • Example 1 an optical filter having a glass support substrate as a substrate was produced according to the following procedure and conditions.
  • a support substrate made of borosilicate glass Shot Japan Co., Ltd. D263, thickness 0.1 mm, optical properties of the substrate are listed in Table 16) was used on both sides of the substrate with an ion-assisted vacuum deposition apparatus at a deposition temperature of 120 ° C.
  • Dielectric multilayer film [silica (SiO 2 : refractive index of 1.45 nm light of 550 nm) layer and titania (TiO 2 : 550 nm light refraction) satisfying the requirements (P) and (Q) of the design 1 described in 11 Ratio 2.45) layers are alternately stacked] to obtain an optical filter 1 having a thickness of 0.11 mm.
  • the film thickness in the design 1 of Table 11 represents a physical film thickness.
  • the results of requirements (P) and (Q) in Table 16 indicate the total optical characteristics of all the dielectric multilayer films included in the optical filter. The same applies below.
  • Table 16 shows the optical characteristics of the obtained optical filter 1.
  • the optical filter 1 satisfies the requirements (A), (C), (J) and (M), has high visible light transmittance, good characteristics with little green color change at oblique incidence, and near-infrared light shielding characteristics. And has the characteristic of correcting the visibility of the imaging device and the human eye.
  • the optical filter 1 satisfies the requirements (B), (F) and (G), has an infrared shielding performance, and has a low absorption characteristic.
  • the optical filter is set. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in a state where it was not.
  • Example 2 an optical filter including a substrate having a resin-made absorption layer containing an infrared absorber was produced according to the following procedure and conditions.
  • the following curable composition solution (1) was applied by spin coating on a borosilicate glass support substrate (D263, thickness 0.1 mm, manufactured by Shot Japan Co., Ltd.), and then on a hot plate at 80 ° C.
  • the solvent was removed by volatilization by heating for 2 minutes, and a resin layer functioning as an adhesive layer with the absorbing layer described later was formed.
  • the spin coater coating conditions were adjusted so that the resin layer had a thickness of about 0.8 ⁇ m.
  • Curable composition solution (1) 30 parts by mass of isocyanuric acid ethylene oxide modified triacrylate (trade name: Aronix M-315, manufactured by Toagosei Co., Ltd.), 20 parts by mass of 1,9-nonanediol diacrylate, methacrylic acid 20 parts by mass, 30 parts by mass of glycidyl methacrylate, 5 parts by mass of 3-glycidoxypropyltrimethoxysilane, 1 part by mass of 1-hydroxycyclohexylbenzophenone (trade name: IRGACURE 184, manufactured by Ciba Specialty Chemicals), and 1 part by weight of Sun-Aid SI-110 (manufactured by Sanshin Chemical Industry Co., Ltd.) was mixed, dissolved in propylene glycol monomethyl ether acetate so that the solid content concentration was 50% by mass, and then millipore having a pore size of 0.2 ⁇ m. Filtered solution
  • a solution (A2) having a resin concentration of 8% by mass 100 parts of the resin A obtained in Resin Synthesis Example 1, 0.480 part of the compound (A) and dichloromethane were added to prepare a solution (A2) having a resin concentration of 8% by mass.
  • the solution (A2) is applied on the resin layer using an applicator under conditions such that the film thickness after drying is 10 ⁇ m, and heated on a hot plate at 80 ° C. for 5 minutes, After removing the solvent by volatilization at 100 ° C. for 2 hours under reduced pressure, exposure using a conveyor type exposure machine (exposure amount: 1 J / cm 2 , illuminance: 200 mW), followed by baking at 180 ° C.
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of design 2 shown in Table 11 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum evaporation apparatus.
  • the optical filter 2 having a thickness of 0.12 mm and a titania (TiO 2 : 550 nm light refractive index 2.45) layer are alternately laminated].
  • the film thickness in the design 2 of Table 11 represents a physical film thickness.
  • Table 16 shows the optical characteristics of the obtained optical filter 2.
  • the optical filter 2 satisfies the requirements (A), (C), (E), (H), (J) and (M), and has high visible light transmittance, green and red color changes at oblique incidence. It had few good characteristics, a near-infrared light shielding characteristic, and a characteristic for correcting the visibility of the imaging device and the human eye.
  • the optical filter 2 satisfies the requirements (B), (E), (F), and (G), has an infrared shielding performance, and has low absorption characteristics.
  • a temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in the state where no filter was set.
  • Example 3 an optical filter having a resin-made absorption plate containing two kinds of infrared absorbers as a substrate was produced according to the following procedure and conditions. To the container, 100 parts of the resin A obtained in Resin Synthesis Example 1, 0.034 parts of the compound (B), 0.095 parts of the compound (C) and dichloromethane were added to prepare a solution having a resin concentration of 20% by mass. The resulting solution was cast on a borosilicate glass substrate (D263, thickness 0.1 mm, manufactured by Shot Japan Co., Ltd.), dried at 60 ° C. for 8 hours, and further dried at 140 ° C. for 8 hours under reduced pressure.
  • a borosilicate glass substrate D263, thickness 0.1 mm, manufactured by Shot Japan Co., Ltd.
  • substrate) of thickness 0.1mm containing an infrared absorber was obtained by peeling from this support body.
  • concentrations of the compounds (B) and (C) and the film thickness of the absorbing plate are values set so that the optical characteristics of the substrate satisfy the requirements (N), (O), and (R) described in Table 16 It is.
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of design 3 described in Table 11 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum deposition apparatus.
  • the optical filter 3 having a thickness of 0.108 mm and a titania (TiO 2 : 550 nm light refractive index 2.45) layer] are formed.
  • the film thickness in the design 3 of Table 11 represents a physical film thickness.
  • the optical properties of the obtained optical filter 3 are shown in Table 16 and FIG.
  • the optical filter 3 satisfies the requirements (A), (C), (E), (H), (J), (M), (K), and (L), and has high visible light transmittance and oblique incidence. It has good characteristics with little color change of blue, green, and red, has a light shielding characteristic of near infrared rays, and has a characteristic of correcting the visibility of the imaging device and human eyes.
  • the substrate was an optical filter containing the infrared absorbers (DA) and (DB) and having very little dependency on red incident angle.
  • the optical filter 3 satisfies the requirements (B), (E), (F), and (G), has an infrared shielding performance, and has a low absorption characteristic. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in the state where no filter was set.
  • Example 4 an optical filter having a resin-made absorption plate containing two kinds of infrared absorbers and an ultraviolet absorber as a substrate was produced according to the following procedure and conditions. To the container, 100 parts of the resin A obtained in Resin Synthesis Example 1, 0.034 part of the compound (B), 0.095 part of the compound (C), 0.045 part of the compound (F) and dichloromethane are added, and the resin concentration is increased. A 20% by weight solution was prepared. The obtained solution was cast on a borosilicate glass support (manufactured by Shot Japan Co., Ltd., D263, thickness 0.1 mm), dried at 60 ° C. for 8 hours, and further dried at 140 ° C. under reduced pressure for 4 hours.
  • a borosilicate glass support manufactured by Shot Japan Co., Ltd., D263, thickness 0.1 mm
  • substrate) with a thickness of 0.1 mm containing an infrared absorber and a ultraviolet absorber was obtained by peeling from this support body.
  • concentrations of the compounds (B), (C) and (F) and the film thickness of the absorbing plate are such that the optical characteristics of the substrate satisfy the requirements (N), (O) and (R) described in Table 16. This is the value set in.
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of the design 4 described in Table 12 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum deposition apparatus.
  • the optical refractive index 1.45) layer and the titania (TiO 2 : 550 nm light refractive index 2.45) layer are alternately laminated, and the designed optical characteristics shown in FIG. 11] are formed.
  • An optical filter 4 having a thickness of 0.11 mm was obtained.
  • the film thickness in the design 4 of Table 12 represents a physical film thickness.
  • Table 16 shows the optical characteristics of the obtained optical filter 4.
  • the optical filter 4 satisfies the requirements (A), (C), (E), (H), (J), (M), (K), and (L), and has high visible light transmittance and oblique incidence. It has good characteristics with little color change of blue, green, and red, has a light shielding characteristic of near infrared rays, and has a characteristic of correcting the visibility of the imaging device and human eyes.
  • ⁇ 0 (UV) is 421 nm or less
  • high blue transmittance characteristics and ⁇ 30 (UV) - ⁇ 0 (UV) is 3.4 nm
  • the incident angle dependency of blue Has a characteristic that the transmittance decreases at a high incident angle, and is an optical filter that matches the incident angle dependency of green and red and has very little dependency on the incident angle of color.
  • the optical filter 4 satisfies the requirements (B), (E), (F) and (G), has an infrared shielding performance, and has a low absorption characteristic. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in the state where no filter was set.
  • Example 5 an optical filter having a resin-made absorbing plate containing an infrared absorbent as a substrate was produced according to the following procedure and conditions. 100 parts of the resin A obtained in Resin Synthesis Example 1, 0.147 part of the compound (B) and dichloromethane were added to a container to prepare a solution having a resin concentration of 20% by mass. The obtained solution was cast on a borosilicate glass support (manufactured by Shot Japan Co., Ltd., D263, thickness 0.1 mm), dried at 60 ° C. for 8 hours, and further dried at 140 ° C. under reduced pressure for 4 hours.
  • a borosilicate glass support manufactured by Shot Japan Co., Ltd., D263, thickness 0.1 mm
  • substrate) containing 0.05 mm in thickness containing an infrared absorber was obtained by peeling from this support body.
  • concentration of the said compound (B) and the film thickness of an absorption board are the values set so that the optical characteristic of a board
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of the design 5 described in Table 12 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum deposition apparatus.
  • Optical filter 5 having a thickness of 0.058 mm and a titania (TiO 2 : 550 nm light refractive index 2.45) layer].
  • the film thickness in the design 5 of Table 12 represents a physical film thickness.
  • Table 16 shows the optical characteristics of the obtained optical filter 5.
  • the optical filter 5 satisfies the requirements (A), (C), (E), (H), (J), and (M), and has high visible light transmittance, blue, green, and red color when obliquely incident. It has good characteristics with little change, has a light shielding characteristic of near infrared rays, and has a characteristic of correcting the visual sensitivity of the imaging device and human eyes.
  • the optical filter 5 satisfies the requirements (B), (E), (F), and (G), has an infrared shielding performance, and has low absorption characteristics. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in the state where no filter was set.
  • Example 6 an optical filter including a substrate having a resin absorption layer containing two kinds of infrared absorbers and an ultraviolet absorber and having a transmission band in the near infrared region of 750 to 1000 nm was produced by the following procedure and conditions. .
  • the curable composition solution (1) was applied by spin coating on a borosilicate glass supporting substrate (D263, thickness 0.05 mm, manufactured by Shot Japan Co., Ltd.), and then on a hot plate at 80 ° C. The solvent was removed by volatilization by heating for 2 minutes, and a resin layer functioning as an adhesive layer with the absorbing layer described later was formed. At this time, the spin coater coating conditions were adjusted so that the resin layer had a thickness of about 0.8 ⁇ m.
  • a substrate having a thickness of 0.06 mm having a resin-made absorption layer containing an absorbent and an ultraviolet absorbent was obtained.
  • concentrations of the compounds (B), (C) and (F) and the film thickness of the absorption layer are such that the optical characteristics of the substrate satisfy the requirements (N), (O) and (R) described in Table 16. This is the value set in.
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of the design 6 described in Table 12 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum evaporation apparatus. And a tantalum oxide (Ta 2 O 5 : 550 nm light refractive index 2.14) layer are alternately stacked] and a thickness of 0.071 mm An optical filter 6 was obtained.
  • the film thickness in the design 6 of Table 12 represents a physical film thickness.
  • the optical characteristics of the obtained optical filter 6 are shown in Table 16 and FIG.
  • the optical filter 6 satisfies the requirement (A), has a high visible light transmittance, satisfies the requirements (B) and (G), has an infrared shielding performance, and satisfies the requirements (A), (D), (H ), (J), (M), (K) and (L), high visible light transmittance, good characteristics with little change in tint of blue, green and red at oblique incidence, near infrared And has a characteristic of correcting the visual sensitivity of the imaging device and the human eye.
  • the transmission band where the transmittance is 50% or more at the wavelength of 750 to 1000 nm is 18 nm of the wavelength of 930 to 947 nm, and the high sensitivity to the wavelength of 930 to 947 nm as a near infrared sensor, It was an optical filter having both shielding properties in the near-infrared wavelength of 720 to 1100 nm.
  • the optical filter 6 satisfies the requirements (B), (F) and (G), has an infrared shielding performance, and has a low absorption characteristic.
  • the optical filter is set. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in a state where it was not.
  • Example 7 A substrate having a thickness of 0.06 mm having an absorption layer made of a resin containing an infrared absorber and an ultraviolet absorber was obtained by the same procedure as in Example 6.
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of the design 7 described in Table 13 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum deposition apparatus.
  • a tantalum oxide (Ta 2 O 5 : 550 nm light refractive index 2.14) layer are alternately stacked] and a thickness of 0.076 mm
  • An optical filter 7 was obtained.
  • the film thickness in the design 7 of Table 13 represents a physical film thickness.
  • the optical properties of the obtained optical filter 7 are shown in Table 16 and FIG.
  • the optical filter 7 satisfies the requirement (A), has a high visible light transmittance, satisfies the requirements (B) and (G), has an infrared shielding performance, and satisfies the requirements (A), (D), (H ), (J), (M), (K) and (L), high visible light transmittance, good characteristics with little change in tint of blue, green and red at oblique incidence, near infrared And has a characteristic of correcting the visual sensitivity of the imaging device and the human eye.
  • the transmission band where the transmittance is 50% or more at the wavelength of 750 to 1000 nm is 2 nm of the wavelength of 930 to 931 nm, and the high sensitivity to the wavelength of 930 to 931 nm as a near infrared sensor, It was an optical filter having both shielding properties in the near-infrared wavelength of 720 to 1100 nm.
  • the optical filter 7 satisfies the requirements (B), (F) and (G), has an infrared shielding performance, and has a low absorption characteristic.
  • the optical filter is set. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in a state where it was not.
  • Example 8 an optical filter including a substrate having a resin-made absorption layer containing four kinds of infrared absorbers and an ultraviolet absorber, and having a medium refractive index material layer in a dielectric multilayer film according to the following procedure and conditions.
  • the curable composition solution (1) was applied by spin coating on a borosilicate glass supporting substrate (D263, thickness 0.05 mm, manufactured by Shot Japan Co., Ltd.), and then on a hot plate at 80 ° C. The solvent was removed by volatilization by heating for 2 minutes, and a resin layer functioning as an adhesive layer with the absorbing layer described later was formed. At this time, the spin coater coating conditions were adjusted so that the resin layer had a thickness of about 0.8 ⁇ m.
  • a substrate having a thickness of 0.06 mm having a resin-made absorption layer containing an absorbent and an ultraviolet absorbent was obtained.
  • concentrations of the compounds (A), (B), (C), (D) and (F) and the film thickness of the absorption layer are determined according to the requirements (N), (O ) And (R).
  • a dielectric multilayer film [silica (SiO 2 : 550 nm) satisfying the requirements (P) and (Q) of the design 8 shown in Table 13 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum evaporation apparatus.
  • light reffractive index 1.405
  • titania TiO 2 : refractive index 2.45 of light of 550 nm
  • silica SiO 2 : refractive index of light 550 nm of 1.
  • Table 16 shows the optical characteristics of the obtained optical filter 8.
  • the optical filter 8 satisfies the requirements (A), (C), (E), (H), (J), (M), (K), and (L), and has high visible light transmittance and oblique incidence. It has good characteristics with little color change of blue, green, and red, has a light shielding characteristic of near infrared rays, and has a characteristic of correcting the visibility of the imaging device and human eyes. In particular, because it has a dielectric multilayer film including a medium refractive index material layer, it has the characteristics of correcting the visual sensitivity of the imaging device and the human eye and the shielding property of near infrared rays even though the number of stacked layers is small. .
  • the optical filter 8 satisfies the requirements (B), (E), (F), and (G), has an infrared shielding performance, and has a low absorption characteristic. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in the state where no filter was set.
  • Example 9 The same procedure except that 0.041 part of compound (C), 0.01 part of compound (E) and 0.045 part of compound (F) were used instead of 0.095 part of compound (C) in Example 3. Thus, an optical filter 9 having a thickness of 0.108 mm was obtained.
  • Table 16 shows the optical characteristics of the obtained optical filter 9.
  • the optical filter 9 satisfies the requirements (A), (C), (E), (H), (J), (M), (K), and (L), and has high visible light transmittance and oblique incidence. It has good characteristics with little color change of blue, green, and red, has a light shielding characteristic of near infrared rays, and has a characteristic of correcting the visibility of the imaging device and human eyes.
  • the absorption plate was an optical filter containing the infrared absorbers (DA) and (DB) and having very little dependency on red incident angle.
  • the optical filter 9 satisfies the requirements (B), (E), (F), and (G), has an infrared shielding performance, and has a low absorption characteristic. A temperature suppression effect of 4.5 ° C. or more was obtained as compared with a temperature increase in the state where no filter was set.
  • Comparative Example 1 a conventional optical filter that does not satisfy the requirement (B) in which a resin-made absorption plate containing an infrared absorbent is used as a substrate was produced according to the following procedure and conditions. To the container, 100 parts of the resin A obtained in Resin Synthesis Example 1, 0.034 parts of the compound (B), 0.095 parts of the compound (C) and dichloromethane were added to prepare a solution having a resin concentration of 20% by mass. The obtained solution was cast on a glass support (manufactured by Shot Japan Co., Ltd., D263, thickness 0.1 mm), dried at 60 ° C. for 8 hours, and further dried at 140 ° C. under reduced pressure for 4 hours, and then the support.
  • a glass support manufactured by Shot Japan Co., Ltd., D263, thickness 0.1 mm
  • the obtained substrate was formed using a dielectric multilayer film [silica (SiO 2 : light of 550 nm) not satisfying the requirement (Q) of the design 9 shown in Table 14 at an evaporation temperature of 120 ° C. using an ion-assisted vacuum evaporation apparatus.
  • Refractive index 1.45) layers and titania (TiO 2 : 550 nm light refractive index 2.45) layers are alternately laminated, and the design optical characteristics shown in FIG. A 106 mm optical filter 9 was obtained.
  • the film thickness in the design 9 of Table 14 represents a physical film thickness.
  • the optical characteristics of the obtained optical filter 9 are shown in Table 16 and FIG.
  • the optical filter 9 satisfies the requirements (A), (C), (H), (J), and (M), and has high visible light transmittance and good characteristics with little change in color of green and red at oblique incidence. It has a property of shielding near infrared rays and a property of correcting the visual sensitivity of the imaging device and the human eye.
  • the optical filter 9 satisfies the requirement (G), but does not satisfy the requirements (B), (E) and (F), and does not have an infrared shielding performance capable of obtaining a dark current suppressing effect.
  • a temperature suppression effect of 4.5 ° C. or higher was not obtained as compared with the temperature increase in the state where the optical filter was not set.
  • Comparative Example 2 a conventional optical filter that does not satisfy the requirement (B) in which an absorbing plate made of copper phosphate glass is used as a substrate was produced according to the following procedure and conditions. Matsunami Glass Industrial Co., Ltd. infrared cut filter (BS11 adjusted to a thickness of 0.09 mm) using an ion-assisted vacuum deposition apparatus at a deposition temperature of 120 ° C. Q) Dielectric multilayer film not satisfying [silica (SiO 2 : 550 nm light refractive index 1.45) layer and titania (TiO 2 : 550 nm light refractive index 2.45) layer are alternately laminated. The optical filter 10 having a thickness of 0.095 mm was obtained. In addition, the film thickness in the design 10 of Table 14 represents a physical film thickness.
  • Table 16 shows the optical characteristics of the obtained optical filter 10.
  • the optical filter 10 satisfies the requirements (A), (C), (H), and (M), has high visible light transmittance, good characteristics with little change in hue of green and red at oblique incidence, It had a light shielding characteristic and a characteristic for correcting the visibility of the imaging apparatus and human eyes.
  • the requirement (F) is satisfied, the requirements (B), (E), and (G) are not satisfied, and the infrared shielding performance capable of obtaining the dark current suppressing effect is not obtained, and the dark current suppressing effect evaluation is performed.
  • a temperature suppressing effect of 4.5 ° C. or higher was not obtained as compared with a temperature increase in the state where no optical filter was set.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Polarising Elements (AREA)

Abstract

La présente invention concerne un filtre optique et son utilisation et, plus précisément, un dispositif d'imagerie à semi-conducteurs, un module de caméra et un module de capteur, et ce filtre optique comprend un substrat, et un film multicouche diélectrique sur au moins une surface du substrat, et satisfait aux exigences (A) à (C) suivantes: (A) aux longueurs d'onde de 440 à 580 nm, la transmittance moyenne d'un faisceau lumineux non polarisé quand elle est mesurée par rapport à la direction verticale du filtre optique est de 75% ou plus; (B) aux longueurs d'onde de 1200 à 1600 nm, la réflectance moyenne d'un faisceau lumineux non polarisé incident à un angle de 5° par rapport à la direction verticale d'une surface du filtre optique est supérieure ou égale à 60%; et (C) aux longueurs d'onde de 720 à 1100 nm, la transmittance moyenne du faisceau lumineux non polarisé quand elle est mesurée par rapport à la direction verticale du filtre optique est inférieure ou égale à 3%.
PCT/JP2019/012680 2018-03-26 2019-03-26 Filtre optique et son utilisation Ceased WO2019189072A1 (fr)

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WO2021131520A1 (fr) * 2019-12-27 2021-07-01 株式会社小糸製作所 Unité de détection
JP2022103108A (ja) * 2020-12-25 2022-07-07 Jsr株式会社 光学フィルター、固体撮像装置およびカメラモジュール
JP2023007400A (ja) * 2021-06-28 2023-01-18 Jsr株式会社 光学センサー用組成物および光学センサーならびに該光学フィルターを用いた固体撮像装置およびカメラモジュール
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