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WO2019152462A1 - Film ou revêtement conducteur transparent sur une lentille qui sert de verrouillage sur un module laser à semi-conducteurs - Google Patents

Film ou revêtement conducteur transparent sur une lentille qui sert de verrouillage sur un module laser à semi-conducteurs Download PDF

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Publication number
WO2019152462A1
WO2019152462A1 PCT/US2019/015766 US2019015766W WO2019152462A1 WO 2019152462 A1 WO2019152462 A1 WO 2019152462A1 US 2019015766 W US2019015766 W US 2019015766W WO 2019152462 A1 WO2019152462 A1 WO 2019152462A1
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WIPO (PCT)
Prior art keywords
lens
semiconductor laser
shape
laser
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/015766
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English (en)
Inventor
Charles André Schrama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/885,266 external-priority patent/US10511139B2/en
Application filed by Lumileds LLC filed Critical Lumileds LLC
Publication of WO2019152462A1 publication Critical patent/WO2019152462A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Definitions

  • the disclosed embodiments are generally related to a semiconductor laser module, and more particularly to semiconductor laser safety with transparent conducting film or coating on a lens that serves as an interlock.
  • VCSELs vertical-cavity surface-emitting lasers
  • a camera module may detect the reflected radiation, and then image processing algorithms may perform the biometric identification.
  • IEC International Electrotechnical Commission
  • a metal piece or metal cap is used to provide laser safety and meet such safety standards. For example, if the metal piece is damaged, removed or broken, the electrical connection to the laser is disrupted and the laser switches off.
  • a semiconductor laser module may comprise a semiconductor laser and a transparent optical element.
  • the semiconductor laser may emit laser light through the transparent optical element.
  • the transparent optical element that is operatively coupled and positioned to receive emitted laser light from the semiconductor laser may spread the emitted light over an increased solid angle, effectively acting to disperse or diffuse the laser light emitted from the semiconductor laser. Since the optical element is transparent, scattering is kept to a minimum and emitted light mostly remains within a predefined solid angle that is greater than initially emitted laser light.
  • the optical element may be coated with a transparent, conductive material that serves as an interlock on the semiconductor laser by providing part of a series connection to the semiconductor laser.
  • the transparent, conductive material may be placed in the shape of a trace on the optical element where the trace is electrically in series with the semiconductor laser. On a condition that the trace is damaged, fractured, or broken, the laser light emitted from the semiconductor laser may be interrupted.
  • the transparent, conductive material may comprise at least one of an indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium- doped zinc oxide (GZO), or indium-doped zinc oxide (IZO).
  • FIG. 1A is a system diagram illustrating an example semiconductor laser module that includes a transparent optical element coated with a transparent, conductive material that serves as an interlock;
  • FIG. 1 B is a three dimensional diagram of the example semiconductor laser module that is illustrated in FIG. 1A;
  • FIG. 2A is a diagram illustrating an example shape of trace that may be used within the semiconductor laser module illustrated in FIGS. 1A and 1 B;
  • FIG. 2B is a diagram illustrating another example shape of trace that may be used within the semiconductor laser module illustrated in FIGS. 1A and 1 B;
  • FIG. 3A is a diagram illustrating an example connection where an electrical current flows through a vertical-cavity surface-emitting laser (VCSEL) when an ITO trace is not damaged;
  • VCSEL vertical-cavity surface-emitting laser
  • FIG. 3B is a diagram illustrating an example connection where an electrical current is interrupted when an ITO trace is damaged
  • FIG. 4A is a diagram illustrating an example connection where an electrical current flows through a VCSEL when an ITO trace in gate to a field effect transistor (FET) is not damaged;
  • FIG. 4B is a diagram illustrating an example connection where an electrical current is interrupted when an ITO trace in gate to a FET is damaged.
  • FIG. 5 is a diagram illustrating an example process for providing laser safety with an optical element that is coated with a transparent, conductive material.
  • a semiconductor laser module may comprise a semiconductor laser and transparent optical element (or a lens).
  • the transparent optical element operatively coupled and positioned to receive emitted laser light from the semiconductor laser may spread the emitted light over an increased solid angle, effectively acting to disperse or diffuse the laser light emitted from the semiconductor laser. Since the optical element is transparent, scattering is kept to a minimum and emitted light mostly remains within a predefined solid angle that is greater than initially emitted laser light.
  • the optical element may be coated with a transparent, conductive material that serves as an interlock on the semiconductor laser by providing part of a series connection to the semiconductor laser.
  • the transparent, conductive film or coating may be in the shape of a trace where the trace is electrically in series with the semiconductor laser. If the trace is damaged, fractured, or broken by external force, the laser light emitting from the semiconductor laser may be switched off.
  • the transparent, conductive film or coating may be made of, for example, an indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), or any combination thereof.
  • FIG. 1 A illustrates an example semiconductor laser module 100 that includes an optical element 120 that are filmed or coated with a transparent, conductive layer 130.
  • the transparent, conductive layer 130 may serve as an interlock on a semiconductor laser 1 10.
  • the semiconductor laser module 100 includes a semiconductor laser 1 10, a transparent optical element 120, a transparent conductive layer 130, and a printed circuit board (PCB) 140.
  • PCB printed circuit board
  • the semiconductor laser 110 is a device that causes laser oscillation by flowing an electric current to semiconductor. Specifically, light is generated by flowing the forward current to a p-n junction.
  • the p-type layer is connected with the positive terminal and the n-type layer is connected with the negative terminal, electrons enter from the n-type layer and holes from the p-type layer. When the two meet at the junction, an electron drops into a hole and light is emitted at the time.
  • the types of semiconductor laser 1 10 include, but are not limited to, Laser diode (LD), Double heterostructure laser (DH), Separate confinement heterostructure laser (SCH), Distributed Bragg reflector laser (DBR), Distributed feedback laser (DFB), Quantum well laser, Quantum dot laser, Quantum cascade laser (QCL), External-cavity laser (ECL), Extended cavity diode laser, Volume Bragg grating laser, Vertical-cavity surface-emitting laser (VCSEL), Vertical-external-cavity surface-emitting-laser (VECSEL), Hybrid silicon laser, Interband cascade laser (ICL), and Semiconductor ring laser.
  • the terms semiconductor laser, laser diode (LD), injection laser diode (ILD) or diode laser and variations thereof may be used interchangeably throughout this disclosure.
  • the semiconductor laser 1 10 may be infrared red lasers such as vertical-cavity surface-emitting lasers (VCSEL).
  • VCSELs may be used for face and iris recognition.
  • the semiconductor laser module 100 needs to comply with laser safety regulations such as International Electrotechnical Commission (IEC) 60825. This may require a feature in the semiconductor laser module 100 that shuts down the laser when the system becomes unsafe. For example, this can happen when the optical element 120 (or lens) in a semiconductor laser module 100 is fractured, removed, or broken.
  • IEC International Electrotechnical Commission
  • the optical element 120 is a transparent lens, prism or other element that diffuses or disperses the laser radiation in a larger solid angle with minimal scattering such that it is safe to use. Without the optical element 120 (or lens), the system would be unsafe to use. This is especially worrying when systems are used for iris recognition in a mobile application.
  • the optical element 120 may be any type of optical lens. Examples of the optical element 120 include, but are not limited to, a convex lens, biconvex lens, equiconvex lens, concave lens, biconcave lens, plano-convex lens, plano-concave lens, convex-concave (or meniscus) lens, positive meniscus lens, negative meniscus lens, and positive (or converging) lens.
  • the optical element 120 is illustrated as a rectangular prism in FIGS. 1A and 1 B, the optical element 120 may not be limited to such a shape and may be in any type of two dimensional or three dimensional shapes.
  • the optical element 120 may be a circle, ellipse, oval, square, rectangle, triangle, pentagon, hexagon, octagon, triangle, cylinder, sphere, disk, cube, cone, pyramid, triangle prism, pentagonal prism, hexagonal prism, or the like.
  • the optical element 120 may be filmed or coated with the transparent, conductive layer 130 that functions as an interlock for laser safety.
  • the transparent, conductive layer 130 can be shaped as a trace that is electrically in series with the semiconductor laser 110.
  • the transparent, conductive layer 130 i.e. trace
  • the semiconductor laser 1 10 may stop operating. This may prevent the semiconductor module 100 from becoming unsafe.
  • the transparent, conductive layer 130 may be made of any optically transparent, electrically conductive material.
  • transparent, conductive materials include, but are not limited to, indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), indium-doped cadmium oxide (CdO:ln), carbon nanotube, graphene, inherently conductive polymers (ICPs), amorphous indium-zinc oxide, and silver nanoparticle— IT O hybrid.
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • GZO gallium-doped zinc oxide
  • IZO indium-doped zinc oxide
  • CdO:ln indium-doped cadmium oxide
  • carbon nanotube graphene
  • ICPs inherently conductive polymers
  • ICPs inherently conductive polymers
  • FIG. 1 B is a three-dimensional diagram of the semiconductor laser module 100 illustrated in FIG. 1A.
  • FIGS. 2A and 2B illustrate example shapes of traces 230, 250 on optical elements 220, 240, which may be used in combination with any of the embodiments described herein.
  • the trace 230 can be a curved (or radiator) shape.
  • the trace 240 can be a spiral shape.
  • the traces 230, 250 may have any type of shape.
  • Example shapes of traces 230, 250 include, but are not limited to, a curbed shape, coiled shape, stripe shape, box shape, circular shape, spiral shape, and triangular shape.
  • the traces 230, 250 may partially or fully cover the surface of the optical element 220, 240.
  • the traces 230, 250 may need to be densely placed on the surface of the optical element 220, 240 to the extent that they can detect any damage on the optical element 220, 240 if an event occurs. For example, if the optical element 220, 240 are cracked or broken, the electrical current on the trace 230, 250 is disconnected. Since the semiconductor laser is electrically connected to the PCB and the trace 230, 250, the semiconductor laser may be switched off when the trace 230, 250 on the optical element 220, 240 is damaged. End points 232, 234, 252, 254 of the traces 230, 250 may be connected to the PCB. The electrical current may flow into the endpoints 232, 252 and flow out through the endpoints 234, 254, or vice versa.
  • FIG. 3A illustrates an example connection where an electrical current 320 flows through a vertical-cavity surface-emitting laser (VCSEL) 340 when the ITO trace 310 is not damaged.
  • the trace 310 may not include a switch on it, the operation of the VCSEL 340 may be illustrated by a switch representing the ITO trace 330 as an example.
  • the switch controlling the VCSEL i.e. the switch representing the ITO trace 330
  • the switch representing the ITO trace 330 is connected or closed.
  • the current 320 flows into the VCSEL 340 and thereby the VCSEL 340 can emit laser light 350.
  • the VCSEL 340 may be replaced with any type of semiconductor laser such as Laser diode (LD), Double heterostructure laser (DH), Separate confinement heterostructure laser (SCH), Distributed Bragg reflector laser (DBR), Distributed feedback laser (DFB), Quantum well laser, Quantum dot laser, Quantum cascade laser (QCL), External-cavity laser (ECL), Extended cavity diode laser, Volume Bragg grating laser, Vertical- external-cavity surface-emitting-laser (VECSEL), Hybrid silicon laser, Interband cascade laser (ICL), Semiconductor ring laser, or the like.
  • LD Laser diode
  • DH Double heterostructure laser
  • SCH Separate confinement heterostructure laser
  • DBR Distributed Bragg reflector laser
  • DFB Distributed feedback laser
  • Quantum well laser Quantum dot laser
  • Quantum cascade laser QCL
  • ECL External-
  • FIG. 3B illustrates an example connection where an electrical current 320 is interrupted when an ITO trace 310 is damaged. Similar to FIG. 3A, although the trace 310 may not include a switch on it, the operation of the VCSEL 340 may be illustrated by a switch representing the ITO trace 330 as an example. For example, when the ITO trace 310 is damaged, fractured, or broken, the current 320 may not flow through the VCSEL 340 as if the switch controlling the VCSEL (i.e. the switch representing the ITO trace 330) is disconnected or open. When the switch representing the ITO trace 330 is disconnected or open (i.e. there is damage on the ITO trace 310), the VCSEL 340 shuts down the laser light 350, thereby preventing unsafe situation.
  • the switch controlling the VCSEL i.e. the switch representing the ITO trace 330
  • the switch representing the ITO trace 330 is disconnected or open (i.e. there is damage on the ITO trace 310)
  • the VCSEL 340 shuts down
  • FIG. 4A illustrates an example connection where an electrical current 420 flows through a VCSEL 440 when an ITO trace 410 in gate to a field effect transistor (FET) 460 is not damaged.
  • the trace 410 may not include a switch on it, the operation of the VCSEL 440 may be illustrated by a switch representing the ITO trace 430 as an example.
  • the switch controlling the VCSEL i.e. the switch representing the ITO trace 430
  • the FET 460 and the register 470 may be used to amplify the electrical current 420.
  • the FET 460 may be located anywhere in the VCSEL module such as a PCB. However, it needs to be connected to the trace 410 to make sure that the electrical current 420 flows through the VCSEL 440. Although it is not illustrated in FIG. 4A, any type of transistor or switch may be used for the FET 460.
  • the VCSEL 440 may be replaced with any type of semiconductor laser such as Laser diode (LD), Double heterostructure laser (DH), Separate confinement heterostructure laser (SCH), Distributed Bragg reflector laser (DBR), Distributed feedback laser (DFB), Quantum well laser, Quantum dot laser, Quantum cascade laser (QCL), External-cavity laser (ECL), Extended cavity diode laser, Volume Bragg grating laser, Vertical-external-cavity surface-emitting-laser (VECSEL), Hybrid silicon laser, Interband cascade laser (ICL), Semiconductor ring laser, or the like.
  • semiconductor laser such as Laser diode (LD), Double heterostructure laser (DH), Separate confinement heterostructure laser (SCH), Distributed Bragg reflector laser (DBR), Distributed feedback laser (DFB), Quantum well laser, Quantum dot laser, Quantum cascade laser (QCL), External-cavity laser (ECL), Extended cavity diode laser, Volume Bragg grating laser, Vertical-external
  • FIG. 4B illustrates an example connection where an electrical current 420 is interrupted when an ITO trace 410 in gate to a FET 460 is damaged.
  • the trace 410 may not include a switch on it, the operation of the VCSEL 440 may be illustrated by a switch representing the ITO trace 430 as an example.
  • the switch controlling the VCSEL 440 i.e. the switch representing the ITO trace 430
  • the switch representing the ITO trace 430 is disconnected or open (i.e. there is damage on the ITO trace 410)
  • the VCSEL 440 shuts down the laser light 450, thereby preventing unsafe situation.
  • FIG. 5 illustrates an example process for providing laser safety with an optical element that is filmed or coated with a transparent, conductive material that serves (or services) as an interlock on a semiconductor laser module.
  • This example process may be used in combination with any of the embodiments described herein.
  • a semiconductor laser in a semiconductor laser module emits laser light through an optical element or lens.
  • the optical element coupled with the semiconductor laser may disperse or diffuse the laser light emitted from the semiconductor laser.
  • the optical element may be filmed or coated with a transparent conductive material that serves as an interlock on the semiconductor laser.
  • the transparent, conductive material includes indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), gallium- doped zinc oxide (GZO), indium-doped zinc oxide (IZO), indium-doped cadmium oxide (CdO:ln), carbon nanotube, graphene, inherently conductive polymers (ICPs), amorphous indium-zinc oxide, silver nanoparticle— ITO hybrid, or any combination thereof.
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • GZO gallium- doped zinc oxide
  • IZO indium-doped zinc oxide
  • CdO:ln indium-doped cadmium oxide
  • carbon nanotube graphene
  • ICPs inherently conductive polymers
  • ICPs inherently conductive polymers
  • the transparent, conductive material may be placed in any shape that can detect damage on the optical element.
  • it can be the shape of a trace.
  • Example of the shapes of the transparent, conductive material include a curbed shape, radiator shape, spiral shape, circular shape, polygon shape, triangular shape, square shape, rectangular shape, trapezoidal shape, or the like.
  • the trace may be electrically in series with the semiconductor laser to flow the current from a PCB to the semiconductor laser. On a condition that the trace is damaged, fractured, or broken, the trace is electrically interrupted, which causes the semiconductor laser to stop operating or shut down at step 530.
  • the methods described herein are not limited to any particular element(s) that perform(s) any particular function(s) and some steps of the methods presented need not necessarily occur in the order shown. For example, in some cases two or more method steps may occur in a different order or simultaneously. In addition, some steps of the described methods may be optional (even if not explicitly stated to be optional) and, therefore, may be omitted. These and other variations of the methods disclosed herein will be readily apparent, especially in view of the description of a method and apparatus described herein, and are considered to be within the full scope of the invention.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un procédé et des appareils qui permettent de fournir une sécurité laser dans des modules laser à semi-conducteurs. Par exemple, un module laser à semi-conducteurs peut comprendre un laser à semi-conducteurs et un élément optique. L'élément optique, qui est fonctionnellement couplé au laser à semi-conducteurs, peut disperser la lumière laser émise par le laser à semi-conducteurs. L'élément optique peut être revêtu d'un matériau conducteur transparent qui sert de verrouillage sur le laser à semi-conducteurs. Le matériau conducteur transparent peut être placé sous la forme d'une trace sur l'élément optique, la trace étant électriquement en série avec le laser à semi-conducteurs. Si la trace est endommagée, la lumière laser émise par le laser à semi-conducteurs peut être interrompue.
PCT/US2019/015766 2018-01-31 2019-01-30 Film ou revêtement conducteur transparent sur une lentille qui sert de verrouillage sur un module laser à semi-conducteurs Ceased WO2019152462A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/885,266 US10511139B2 (en) 2018-01-31 2018-01-31 Transparent conducting film or coating on a lens that serves as an interlock on a semiconductor laser module
US15/885,266 2018-01-31
EP18165903 2018-04-05
EP18165903.8 2018-04-05

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WO2019152462A1 true WO2019152462A1 (fr) 2019-08-08

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WO (1) WO2019152462A1 (fr)

Cited By (8)

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WO2020038776A1 (fr) * 2018-08-22 2020-02-27 Osram Oled Gmbh Dispositif optoélectronique et procédé de commande d'un dispositif optoélectronique
JP2020080400A (ja) * 2018-11-13 2020-05-28 株式会社ダイセル 光学部材、該光学部材を含むレーザーモジュール及びレーザーデバイス
WO2020122815A1 (fr) * 2018-12-10 2020-06-18 Ams Sensors Asia Pte. Ltd. Module électroluminescent comprenant un élément de sécurité oculaire améliorée
CN112415761A (zh) * 2020-12-03 2021-02-26 浙江水晶光电科技股份有限公司 光学投影模组及深度相机
WO2021107862A1 (fr) * 2019-11-29 2021-06-03 Ams Sensors Singapore Pte. Ltd. Appareil pour surveiller l'intégrité mécanique d'un composant de sécurité oculaire d'un illuminateur
US20210336402A1 (en) * 2020-04-23 2021-10-28 Analog Devices International Unlimited Company Laser system
CN114336278A (zh) * 2021-11-30 2022-04-12 南京邮电大学 一种垂直发射的ZnO悬浮碗状激光器及其制备方法
US12527139B2 (en) 2021-02-12 2026-01-13 Ams-Osram Asia Pacific Pte. Ltd. Optoelectronic module

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US20160290856A1 (en) * 2015-04-01 2016-10-06 Osram Gmbh Device and method for light conversion device monitoring

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US20140009952A1 (en) * 2011-03-15 2014-01-09 Sharp Kabushiki Kaisha Light emitting device, lighting system, headlight, and vehicle
DE102015101424A1 (de) * 2015-01-30 2016-08-04 Pmdtechnologies Gmbh Beleuchtungsvorrichtung
US20160290856A1 (en) * 2015-04-01 2016-10-06 Osram Gmbh Device and method for light conversion device monitoring

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020038776A1 (fr) * 2018-08-22 2020-02-27 Osram Oled Gmbh Dispositif optoélectronique et procédé de commande d'un dispositif optoélectronique
JP2020080400A (ja) * 2018-11-13 2020-05-28 株式会社ダイセル 光学部材、該光学部材を含むレーザーモジュール及びレーザーデバイス
WO2020122815A1 (fr) * 2018-12-10 2020-06-18 Ams Sensors Asia Pte. Ltd. Module électroluminescent comprenant un élément de sécurité oculaire améliorée
US12155169B2 (en) 2018-12-10 2024-11-26 Ams Sensors Asia Pte. Ltd. Light emitting module including enhanced eye-safety feature
WO2021107862A1 (fr) * 2019-11-29 2021-06-03 Ams Sensors Singapore Pte. Ltd. Appareil pour surveiller l'intégrité mécanique d'un composant de sécurité oculaire d'un illuminateur
US20210336402A1 (en) * 2020-04-23 2021-10-28 Analog Devices International Unlimited Company Laser system
US12212119B2 (en) * 2020-04-23 2025-01-28 Analog Devices International Unlimited Company Laser system
CN112415761A (zh) * 2020-12-03 2021-02-26 浙江水晶光电科技股份有限公司 光学投影模组及深度相机
US12527139B2 (en) 2021-02-12 2026-01-13 Ams-Osram Asia Pacific Pte. Ltd. Optoelectronic module
CN114336278A (zh) * 2021-11-30 2022-04-12 南京邮电大学 一种垂直发射的ZnO悬浮碗状激光器及其制备方法
CN114336278B (zh) * 2021-11-30 2023-08-15 南京邮电大学 一种ZnO悬浮碗状结构的垂直腔面激光发射器及其制备方法

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TW201941510A (zh) 2019-10-16

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