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WO2019151765A1 - Dispositif thermoélectrique - Google Patents

Dispositif thermoélectrique Download PDF

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Publication number
WO2019151765A1
WO2019151765A1 PCT/KR2019/001276 KR2019001276W WO2019151765A1 WO 2019151765 A1 WO2019151765 A1 WO 2019151765A1 KR 2019001276 W KR2019001276 W KR 2019001276W WO 2019151765 A1 WO2019151765 A1 WO 2019151765A1
Authority
WO
WIPO (PCT)
Prior art keywords
disposed
terminal connection
connection electrode
resin layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2019/001276
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English (en)
Korean (ko)
Inventor
구진아
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190011340A external-priority patent/KR102724358B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to US16/963,990 priority Critical patent/US20210036204A1/en
Priority to EP19747083.4A priority patent/EP3748704B1/fr
Priority to JP2020541410A priority patent/JP7387612B2/ja
Priority to CN201980011431.9A priority patent/CN111699562B/zh
Publication of WO2019151765A1 publication Critical patent/WO2019151765A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/82—Interconnections

Definitions

  • the present invention relates to a thermoelectric element, and more particularly, to a substrate and an electrode structure included in the thermoelectric device.
  • Thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes in a material, and means a direct energy conversion between heat and electricity.
  • thermoelectric device is a generic term for a device using a thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.
  • Thermoelectric elements may be classified into a device using a temperature change of the electrical resistance, a device using the Seebeck effect, a phenomenon in which electromotive force is generated by a temperature difference, a device using a Peltier effect, a phenomenon in which endothermic or heat generation by current occurs. .
  • thermoelectric devices have been applied to a variety of home appliances, electronic components, communication components, and the like.
  • the thermoelectric element may be applied to a cooling device, a heating device, a power generating device, or the like. Accordingly, the demand for thermoelectric performance of thermoelectric elements is increasing.
  • the thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, and a plurality of thermoelectric legs are arranged in an array form between the upper substrate and the lower substrate, and a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate.
  • a plurality of lower electrodes are disposed between the thermoelectric leg and the lower substrate.
  • the plurality of upper electrodes and the plurality of lower electrodes connect the thermoelectric legs in series or in parallel.
  • thermoelectric element may be disposed on a metal support.
  • the metal support, the substrate and the electrode may be aligned and then pressurized.
  • a thermoelectric element disposed on a metal support may be referred to as a thermoelectric module or a thermoelectric device.
  • Fig. 1 (a) shows a step of manufacturing the lower substrate side of the thermoelectric device
  • Fig. 1 (b) is a sectional view of the lower substrate side of the thermoelectric device.
  • the bonding layer 70 is disposed between the first resin layer 51 and the metal support 60 on which the plurality of lower electrodes 52 are disposed, and then pressurized. can do. As a result, a structure in which the bonding layer 70 is disposed on the metal support 60 and the first resin layer 51 and the plurality of lower electrodes 52 are disposed on the bonding layer 70 can be obtained.
  • the bonding layer 70 is disposed between the first resin layer 51 and the metal support 60 on which the plurality of lower electrodes 52 are disposed, and then pressurized. In this case, there is a possibility that pressure is not evenly applied to the first resin layer 51 as a whole, and thus a portion where the bonding strength is weak may occur.
  • the height difference between the first resin layer 51 and the lower electrode 52 is about 0.3 mm, it is applied to the region A in which the lower electrode 52 is not disposed in the first resin layer 51.
  • the pressure may be lower than the pressure applied to the region where the lower electrode 52 is disposed. Accordingly, sufficient pressure may not be applied to the edge of the first resin layer 51 in which the lower electrode 52 is not disposed, and the edge of the first resin layer 51 may be peeled off from the metal support 60. This is high.
  • the technical problem to be achieved by the present invention is to provide a substrate and electrode structure of the thermoelectric element.
  • thermoelectric device includes a first metal support, a first bonding layer disposed on the first metal support, a first resin layer disposed on the first bonding layer, and a first resin layer on the first metal support.
  • a plurality of first electrodes arranged on the substrate, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, the plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs A plurality of second electrodes, a second resin layer disposed on the plurality of second electrodes, a second bonding layer disposed on the second resin layer, and a second metal support disposed on the second bonding layer And at least one dummy electrode disposed on the first resin layer, wherein the at least one dummy electrode is disposed on at least one side of an outermost row and an outermost column of the plurality of first electrodes. Is placed.
  • the at least one dummy electrode may include a plurality of dummy electrodes spaced at predetermined intervals.
  • An area of the first resin layer may be larger than an area of the second resin layer.
  • the plurality of first electrodes includes a first terminal connection electrode disposed at one corner of the plurality of first electrodes and a second terminal connection electrode disposed at another corner of the same row or the same column as the first terminal connection electrode. And the first terminal connection electrode and the second terminal connection electrode extend in an edge direction of the first resin layer from a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed.
  • the dummy electrode may be disposed between the first terminal connection electrode and the second terminal connection electrode.
  • the plurality of dummy electrodes may be disposed along side surfaces of a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed.
  • the first terminal connection electrode is further extended in a direction parallel to the row or column where the first terminal connection electrode and the second terminal connection electrode are disposed and toward the second terminal connection electrode, and the second terminal connection electrode is the The first terminal connection electrode and the second terminal connection electrode may be further extended in a direction parallel to the row or column in which the first terminal connection electrode is disposed.
  • the at least one dummy electrode may be made of the same material as the plurality of first electrodes.
  • the at least one dummy electrode may have the same thickness as the plurality of first electrodes.
  • the first resin layer may include an epoxy resin and an inorganic filler, and the inorganic filler may include at least one of aluminum oxide, boron nitride, and aluminum nitride.
  • thermoelectric device having excellent thermal conductivity and high reliability.
  • thermoelectric device according to the embodiment of the present invention has a high bonding strength with the metal support and facilitates wire connection.
  • Fig. 1 (a) shows a step of manufacturing the lower substrate side of the thermoelectric device
  • Fig. 1 (b) is a sectional view of the lower substrate side of the thermoelectric device.
  • thermoelectric element 2 is a sectional view of a thermoelectric element
  • FIG. 3 is a perspective view of the thermoelectric element.
  • thermoelectric device 4 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention.
  • thermoelectric device 5 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to an exemplary embodiment of the present invention.
  • thermoelectric device 6 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to another exemplary embodiment of the present invention.
  • thermoelectric device 7 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to still another embodiment of the present invention.
  • thermoelectric device 8 is an example of experiments on the resin layer bonding strength of the thermoelectric device manufactured according to the embodiment.
  • thermoelectric device 9 is an example in which the resin layer bonding strength of the thermoelectric device manufactured according to the comparative example was tested.
  • thermoelectric element 10 is an exemplary diagram in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.
  • thermoelectric element 11 is an exemplary view in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator.
  • ordinal numbers such as second and first
  • first and second components may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component.
  • thermoelectric element 2 is a sectional view of a thermoelectric element
  • FIG. 3 is a perspective view of the thermoelectric element.
  • the thermoelectric element 100 includes a lower substrate 110, a lower electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, an upper electrode 150, and an upper substrate. 160.
  • the lower electrode 120 is disposed between the lower substrate 110, the lower surface of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 is the upper substrate 160 and the P-type thermoelectric leg. Disposed between the top surface of the 130 and the N-type thermoelectric leg 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the lower electrode 120 and the upper electrode 150. A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 disposed between the lower electrode 120 and the upper electrode 150 and electrically connected to each other may form a unit cell.
  • thermoelectric leg 130 when a voltage is applied to the lower electrode 120 and the upper electrode 150 through the lead wires 181 and 182, a current is transmitted from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect.
  • the flowing substrate absorbs heat to act as a cooling unit, and the substrate flowing current from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 may be heated to act as a heat generating unit.
  • thermoelectric leg 130 and the N-type thermoelectric leg 140 may move due to the Seebeck effect, and electricity may be generated.
  • the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth fluoride (Bi-Te) -based thermoelectric legs including bismuth (Bi) and tellurium (Te) as main materials.
  • P-type thermoelectric leg 130 is antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt%
  • a mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%.
  • the main raw material is Bi-Se-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.
  • N-type thermoelectric leg 140 is selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt%
  • a mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001
  • the main raw material is Bi-Sb-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.
  • the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or a stacked type.
  • the bulk P-type thermoelectric leg 130 or the bulk N-type thermoelectric leg 140 is heat-treated thermoelectric material to produce an ingot (ingot), crushed and ingot to obtain a powder for thermoelectric leg, then Sintering, and can be obtained through the process of cutting the sintered body.
  • the stacked P-type thermoelectric leg 130 or the stacked N-type thermoelectric leg 140 is formed by applying a paste including a thermoelectric material on a sheet-shaped substrate to form a unit member, and then stacking and cutting the unit members. Can be obtained.
  • the pair of P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have the same shape and volume, or may have different shapes and volumes.
  • the height or the cross-sectional area of the N-type thermoelectric leg 140 is the height or the cross-sectional area of the P-type thermoelectric leg 130. It can also be formed differently.
  • thermoelectric performance index ZT
  • Equation 1 The thermoelectric performance index (ZT) can be expressed as in Equation 1.
  • ⁇ is the Seebeck coefficient [V / K]
  • sigma is the electrical conductivity [S / m]
  • ⁇ 2 sigma is the Power Factor [W / mK 2 ].
  • T is the temperature and k is the thermal conductivity [W / mK].
  • k can be represented by a ⁇ c p ⁇ ⁇ , a is thermal diffusivity [cm 2 / S], c p is specific heat [J / gK], and ⁇ is density [g / cm 3 ].
  • thermoelectric performance index of the thermoelectric device In order to obtain a thermoelectric performance index of the thermoelectric device, the Z value (V / K) may be measured using a Z meter, and the thermoelectric performance index (ZT) may be calculated using the measured Z value.
  • the upper electrode 150 disposed between the thermoelectric legs 140 may include at least one of copper (Cu), silver (Ag), and nickel (Ni).
  • the sizes of the lower substrate 110 and the upper substrate 160 may be formed differently.
  • the volume, thickness, or area of one of the lower substrate 110 and the upper substrate 160 may be larger than the volume, thickness, or area of the other. Accordingly, the heat absorbing performance or heat dissipation performance of the thermoelectric element can be improved.
  • the volume, thickness or area of the lower substrate 110 may be greater than at least one of the volume, thickness or area of the upper substrate 160. In this case, when the lower substrate 110 is disposed in the high temperature region for the Seebeck effect, the heating member is applied to the heating region for the Peltier effect or the sealing member for protection from the external environment of the thermoelectric module to be described later is provided on the lower substrate 110.
  • an area of the lower substrate 110 may be formed in a range of 1.2 to 5 times the area of the upper substrate 160.
  • the area of the lower substrate 110 is less than 1.2 times that of the upper substrate 160, the effect on improving the heat transfer efficiency is not high, and when the excess exceeds 5 times, the heat transfer efficiency is significantly lowered, and the thermoelectric module Maintaining its basic shape can be difficult.
  • a heat radiation pattern for example, an uneven pattern may be formed on at least one surface of the lower substrate 110 and the upper substrate 160.
  • the heat dissipation performance of the thermoelectric element can be improved.
  • the uneven pattern is formed on the surface in contact with the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, the bonding characteristics between the thermoelectric leg and the substrate can also be improved.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal pillar shape, an elliptical pillar shape and the like.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure.
  • the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-shaped substrate and then cutting them. As a result, it is possible to prevent loss of material and to improve electrical conduction characteristics.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method.
  • a zone melting method an ingot is manufactured by using a thermoelectric material, and then, by slowly applying heat to the ingot, the particles are rearranged so as to be rearranged in a single direction, and the thermoelectric leg is slowly cooled.
  • the powder sintering method after manufacturing an ingot using a thermoelectric material, the ingot is pulverized and sieved to obtain a thermoelectric leg powder, and the thermoelectric leg is obtained through the sintering process.
  • a sealing member may be further disposed between the lower substrate 110 and the upper substrate 160.
  • the sealing member may be disposed on side surfaces of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 between the lower substrate 110 and the upper substrate 160. . Accordingly, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 may be sealed from external moisture, heat, and contamination.
  • the sealing member is the outermost of the plurality of lower electrodes 120, the outermost of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 and the outermost of the plurality of upper electrodes 150.
  • the sealing case may be spaced apart from a side surface of the sealing case, and may include a sealing material disposed between the sealing case and the lower substrate 110 and a sealing material disposed between the sealing case and the upper substrate 160. As such, the sealing case may contact the lower substrate 110 and the upper substrate 160 through the sealing material. Accordingly, when the sealing case is in direct contact with the lower substrate 110 and the upper substrate 160, heat conduction occurs through the sealing case, and as a result, a temperature difference between the lower substrate 110 and the upper substrate 160 is lowered. Can be prevented.
  • the sealing material may include at least one of an epoxy resin and a silicone resin, or at least one of an epoxy resin and a silicone resin may include a tape coated on both surfaces.
  • the sealing material serves to hermetically seal between the sealing case and the lower substrate 110 and between the sealing case and the upper substrate 160, and the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and The sealing effect of the upper electrode 150 may be increased and may be mixed with a finish, a finish layer, a waterproof material, a waterproof layer, and the like.
  • the sealing material sealing between the sealing case and the lower substrate 110 is disposed on the upper surface of the lower substrate 110
  • the sealing material sealing between the sealing case and the upper substrate 160 is disposed on the side of the upper substrate 160.
  • the area of the lower substrate 110 may be larger than the area of the upper substrate 160.
  • the sealing case guide grooves for drawing lead wires 180 and 182 connected to the electrodes may be formed.
  • the sealing case may be an injection molding made of plastic or the like, and may be mixed with the sealing cover.
  • sealing member is only an example, and the sealing member may be modified in various forms.
  • a heat insulating material may be further included to surround the sealing member.
  • the sealing member may include a heat insulating component.
  • the pressure applied to the substrate during the bonding between the substrate and the metal support is evened to increase the bonding strength between the substrate and the metal support.
  • FIG. 4 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention
  • FIG. 5 is a top view of a resin layer and an electrode structure included in the thermoelectric device according to an embodiment of the present invention
  • FIG. 6 is another view of the present invention.
  • Figure 7 is a top view of the resin layer and electrode structure included in the thermoelectric device according to another embodiment of the present invention.
  • thermoelectric device 400 is disposed on the first metal support 410, the first bonding layer 420 disposed on the first metal support 410, and the first bonding layer 420.
  • the first resin layer 430, the first electrode 440, the P-type thermoelectric leg 450, the N-type thermoelectric leg 455, the second electrode 460, and the second resin layer 470 are respectively illustrated.
  • a heat sink may be disposed on at least one of the first metal support 410 and the second metal support 490.
  • a heat sink may be attached to a surface opposite to a surface on which the bonding layer 420 is disposed on both surfaces of the first metal support 410, and the bonding layer 480 among the both surfaces of the second metal support 490.
  • the heat sink may be attached to the surface opposite to the surface on which the arrangement is made.
  • the first metal support 410 and the heat sink may be integrally formed, and the second metal support 490 and the heat sink may be integrally formed.
  • thermoelectric element may include a first metal support 410, a first resin layer 430, a first electrode 440, a P-type thermoelectric leg 450, an N-type thermoelectric leg 455, and a second electrode ( 460, the second resin layer 470, and the second metal support 490 may be included.
  • thermoelectric element may include a first metal support 410, a first resin layer 430, a first electrode 440, a P-type thermoelectric leg 450, and an N-type thermoelectric to which a heat sink is attached or integrally formed with the heat sink.
  • the leg 455, the second electrode 460, the second resin layer 470, and the heat sink may be attached to or include a second metal support 490 formed integrally with the heat sink.
  • the first metal support 410 and the second metal support 490 may be made of aluminum, an aluminum alloy, copper, a copper alloy, or the like.
  • the first metal support 410 and the second metal support 490 may include a first resin layer 430, a plurality of first electrodes 440, a plurality of P-type thermoelectric legs 450, and a plurality of N-type thermoelectric legs ( 455, the plurality of second electrodes 460, the second resin layer 470, and the like.
  • an area of the first metal support 410 may be larger than an area of the first resin layer 430
  • an area of the second metal support 490 may be larger than an area of the second resin layer 470. .
  • the first resin layer 430 may be disposed in an area spaced apart from the edge of the first metal support 410 by a predetermined distance
  • the second resin layer 470 may be disposed from the edge of the second metal support 470. It may be disposed in an area spaced by a predetermined distance.
  • a heat sink may be formed on a surface opposite to a surface on which the first resin layer 430 is disposed on both surfaces of the first metal support 410.
  • a heat sink may be formed on a surface opposite to a surface on which the second resin layer 470 is disposed on both surfaces of the second metal support 490.
  • each of the first metal support 410 and the second metal support 490 may be integrally formed with the heat sink.
  • the first resin layer 430 and the second resin layer 470 may be formed of a resin composition including a resin and an inorganic filler.
  • the first resin layer 430 and the second resin layer 470 may have a thickness of 0.01 to 0.65 mm, preferably 0.01 to 0.6 mm, more preferably 0.01 to 0.55 mm, and a thermal conductivity of 10 W / mK or more. , Preferably 20W / mK or more, more preferably 30W / mK or more.
  • the resin may include an epoxy resin or a silicone resin.
  • the silicone resin may include, for example, polydimethylsiloxane (PDMS).
  • the epoxy resin may comprise an epoxy compound and a curing agent. At this time, it may be included in 1 to 10 volume ratio of the curing agent with respect to 10 volume ratio of the epoxy compound.
  • the epoxy compound may include at least one of a crystalline epoxy compound, an amorphous epoxy compound and a silicon epoxy compound.
  • the crystalline epoxy compound may comprise a mesogen structure. Mesogen is a basic unit of liquid crystal and includes a rigid structure.
  • the amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in a molecule, and may be, for example, glycidyl etherate derived from bisphenol A or bisphenol F.
  • the curing agent may include at least one of an amine curing agent, a phenol curing agent, an acid anhydride curing agent, a polycapcaptan curing agent, a polyaminoamide curing agent, an isocyanate curing agent, and a block isocyanate curing agent, and two or more kinds of curing agents. It can also be mixed and used.
  • the inorganic filler may include an aluminum oxide and a plurality of plate-like boron nitride agglomerates.
  • the inorganic filler may further include aluminum nitride.
  • the surface of the boron nitride agglomerate may be modified to increase the affinity with the resin.
  • the surface of the boron nitride agglomerate may be coated with a polymer material having a high affinity for the resin, or at least a part of the pores in the boron nitride agglomerate may be filled with a polymer material having a high affinity for the resin. have.
  • the first bonding layer 420 and the second bonding layer 480 may be a thermal interface material (TIM).
  • the first bonding layer 420 and the second bonding layer 480 may be the same resin composition as the resin composition forming the first resin layer 430 and the second resin layer 470. That is, the same resin composition as the resin composition constituting the first resin layer 430 and the second resin layer 470 is applied on the first metal support 410 and the second metal support 490 in an uncured state.
  • the first resin layer 430 and the second resin layer 470 are laminated in a cured state, and the first resin layer 430 and the second resin layer 470 and the first metal support are formed by pressing at a high temperature. 410 and the second metal support 490 may be bonded.
  • the plurality of first electrodes 440 and the plurality of second electrodes 460 may be disposed on a semi-cured resin composition of the first resin layer 430 and the second resin layer 470.
  • the Cu substrate may be manufactured by etching the Cu substrate into an electrode shape.
  • it may also be manufactured by pressing.
  • the first bonding layer 420 and the second bonding layer 480 may be omitted.
  • the radius It after applying the resin composition constituting the first resin layer 430 and the second resin layer 470 on the first metal support 410 and the second metal support 490 in an uncured state, the radius It may be pressurized after arranging a Cu substrate or a pre-aligned electrode in a state of being converted.
  • a pair of P-type thermoelectric legs 450 and N-type thermoelectric legs 455 may be disposed on each first electrode 440, and may be disposed on each first electrode 440 on each second electrode 460.
  • a pair of N-type thermoelectric legs 455 and P-type thermoelectric legs 450 may be disposed such that one of the pair of P-type thermoelectric legs 450 and the N-type thermoelectric legs 455 overlap.
  • At least one dummy electrode 500 may be further disposed on the first resin layer 430.
  • the at least one dummy electrode 500 may be disposed on at least one side of the outermost row and the outermost column of the plurality of first electrodes 440.
  • the dummy electrode 500 has the same material and the same thickness as the plurality of first electrodes 440, but thermoelectric legs are not disposed on the dummy electrode 500 and may not be electrically connected to the dummy electrode 500.
  • the dummy electrode 500 may be disposed to be spaced apart from the plurality of first electrodes 440. In this case, the plurality of dummy electrodes 500 may be spaced apart from each other at predetermined intervals.
  • the dummy electrode 500 may have the same shape as the first electrode 440 or may have a different shape.
  • the thicknesses of the dummy electrode 500 and the plurality of first electrodes 440 are equal to 60% to 140%, preferably 75% to 125% of the individual thicknesses of the plurality of first electrodes 440.
  • the bonding strength may be 90% to 110%. If less than 60% and greater than 140%, there is a possibility that the pressure is not evenly distributed. If less than 60%, there may be a weak portion of the bonding strength at the position where the dummy electrode 500 is disposed. A portion where the bonding strength is weak at the position where the outermost row and outermost column of the first electrode 440 are disposed may be generated.
  • the bonding between the first resin layer 430 and the metal support 410 is performed.
  • the edge region of the first resin layer 430 and the metal support 410 are high. It can be bonded with bond strength.
  • the plurality of first electrodes 440 may include a first terminal connection electrode 442 for connecting the first terminal and a second terminal for connecting a second terminal having a different polarity from the first terminal.
  • the terminal connection electrode 444 may be included.
  • the first terminal connection electrode 442 is disposed at one corner of the plurality of first electrodes 440, and the second terminal connection electrode 444 is the same row or the same as the first terminal connection electrode 442. It can be placed at the other edge of the column.
  • One of the P-type thermoelectric leg and the N-type thermoelectric leg may be disposed in each of the first terminal connection electrode 442 and the second terminal connection electrode 444.
  • the first terminal and the second terminal may be connected to each of the first terminal connection electrode 442 and the second terminal connection electrode 444 through a wire.
  • the first terminal connection electrode 442 and the second terminal connection electrode 444 may be formed larger than the other first electrodes 440.
  • the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed with the first terminal connection electrode 442 and the second terminal connection electrode 444, respectively. It may extend in the edge direction of the first resin layer 430 from the row or column.
  • the first terminal connection electrode 442 is parallel to the row or column in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed, and the second terminal connection is performed.
  • the second terminal connection electrode 444 is parallel to the row or column in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed, and the first terminal connection; It may further extend in the direction toward the electrode 442. That is, each of the first terminal connection electrode 442 and the second terminal connection electrode 444 may have a “b” shape.
  • the plurality of dummy electrodes 500 includes a row in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed between the first terminal connection electrode 442 and the second terminal connection electrode 444. Or along the side of the column.
  • the dummy electrode that is, the plurality of dummy electrodes 500 is disposed between the first terminal connection electrode 442 and the second terminal connection electrode 444
  • the first terminal connection electrode 442 and the second terminal connection are disposed.
  • the electrode 444 is formed large, the pressure applied to the region between the first terminal connection electrode 442 and the second terminal connection electrode 444 is equal to the pressure applied to the region where the other first electrodes 440 are disposed. You can keep it at the same level. Thereby, it is possible to maintain the high bond strength between the first resin layer 430 and the first metal support 410 as a whole.
  • the area of the first resin layer 430 is the area of the second resin layer 470. It can be made larger. Accordingly, the size of the first terminal connection electrode 442 and the second terminal connection electrode 444 may be larger than that of the other first electrodes 440 to facilitate wire connection. The area for arranging the dummy electrode 500 can be secured.
  • FIG. 6 to 7 illustrate that a plurality of dummy electrodes 500 that are dummy electrodes are disposed only between the first terminal connection electrode 442 and the second terminal connection electrode 444, but the present invention is not limited thereto. As shown in FIG. 2, the plurality of dummy electrodes 500 may be further disposed on the side of the outermost row or outermost column of the plurality of first electrodes 440.
  • the dummy electrode 500 for bonding between the first resin layer 430 and the first metal support 410 is disposed as an example, but is not limited thereto, and the second resin layer ( A dummy electrode (not shown) for bonding between the 470 and the second metal support 490 may also be formed in the second resin layer.
  • thermoelectric element 8 is an example of experimenting the resin layer bonding strength of the thermoelectric element manufactured according to the embodiment
  • Figure 9 is an example of experimenting the resin layer bonding strength of the thermoelectric element produced according to the comparative example.
  • FIG. 8 (a) in the embodiment, a plurality of electrodes and a plurality of dummy electrodes are disposed in the resin layer in the structure of FIG. 7, and as shown in FIG. 9 (a), in the comparative example, FIG. 7. Only a plurality of electrodes were disposed in the resin layer except for the plurality of dummy electrodes in the structure of.
  • the rear surface of the resin layer and the metal support bonded to each other is an area of the edge of the resin layer, in particular, between the first terminal connection electrode 442 and the second terminal connection electrode 444. It can be seen that even at (800), no lifting or peeling occurs and high bonding strength is maintained.
  • the rear surface of the resin layer and the metal support bonded to each other according to the comparative example is formed at the edge of the resin layer, in particular, the first terminal connection electrode 442 and the second terminal connection electrode 444. It can be seen that the region 900 between them is easily peeled off.
  • thermoelectric element according to an exemplary embodiment of the present invention is applied to a water purifier will be described with reference to FIG. 10.
  • thermoelectric element 10 is an exemplary diagram in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.
  • the water purifier 1 to which the thermoelectric element is applied includes a raw water supply pipe 12a, a water purification tank inlet pipe 12b, a water purification tank 12, a filter assembly 13, a cooling fan 14, and a heat storage tank ( 15), a cold water supply pipe 15a, and a thermoelectric device 1000.
  • the raw water supply pipe 12a is a supply pipe for introducing purified water from the water source into the filter assembly 13, and the purified water tank inflow pipe 12b is an inflow for introducing purified water from the filter assembly 13 into the purified water tank 12.
  • the cold water supply pipe 15a is a supply pipe through which the cold water cooled to the predetermined temperature by the thermoelectric device 1000 in the purified water tank 12 is finally supplied to the user.
  • the purified water tank 12 temporarily receives the purified water through the filter assembly 13 to store and supply the purified water introduced through the purified water tank inlet 12b to the outside.
  • the filter assembly 13 is composed of a precipitation filter 13a, a pre carbon filter 13b, a membrane filter 13c, and a post carbon filter 13d.
  • the water flowing into the raw water supply pipe 12a may be purified through the filter assembly 13.
  • the heat storage tank 15 is disposed between the purified water tank 12 and the thermoelectric device 1000 to store cold air formed in the thermoelectric device 1000.
  • the cold air stored in the heat storage tank 15 is applied to the purified water tank 12 to cool the water contained in the purified water tank 120.
  • the heat storage tank 15 may be in surface contact with the purified water tank 12 so that the cold air may be smoothly transferred.
  • thermoelectric device 1000 includes a heat absorbing surface and a heat generating surface, and one side is cooled and the other side is heated by electron movement on the P-type semiconductor and the N-type semiconductor.
  • one side may be the purified water tank 12 side, the other side may be the opposite side of the purified water tank 12.
  • thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the purified water tank 12 in the water purifier.
  • thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator will be described with reference to FIG. 11.
  • thermoelectric element 11 is an exemplary view in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator.
  • the refrigerator includes a deep evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric device 1000 in the deep evaporation chamber.
  • the inside of the refrigerator is partitioned into a deep storage compartment and a deep evaporation chamber by a deep evaporation chamber cover 23.
  • an inner space corresponding to the front of the deep evaporation chamber cover 23 may be defined as a deep storage chamber, and an inner space corresponding to the rear of the deep evaporation chamber cover 23 may be defined as a deep temperature evaporation chamber.
  • Discharge grille 23a and suction grille 23b may be respectively formed on the front surface of the deep-temperature evaporation chamber cover 23.
  • the evaporation compartment partition wall 24 is installed at a point spaced forward from the rear wall of the inner cabinet to partition the space in which the depth chamber storage system is placed and the space in which the main evaporator 25 is placed.
  • the cold air cooled by the main evaporator 25 is supplied to the freezer compartment and then returned to the main evaporator again.
  • thermoelectric device 1000 is accommodated in the deep-temperature evaporation chamber, and the heat absorbing surface faces the drawer assembly side of the deep storage chamber, and the heat generating surface faces the evaporator side. Therefore, by using the endothermic phenomenon generated in the thermoelectric device 1000 can be used to quickly cool the food stored in the drawer assembly to an ultra-low temperature state of less than 50 degrees Celsius.
  • thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the drawer assembly in the refrigerator.
  • thermoelectric element may act on the apparatus for power generation, the apparatus for cooling, the apparatus for heating, and the like.
  • the thermoelectric device according to the embodiment of the present invention mainly includes an optical communication module, a sensor, a medical device, a measuring device, an aerospace industry, a refrigerator, a chiller, a car ventilation sheet, a cup holder, a washing machine, a dryer, and a wine cellar. It can be applied to water purifier, sensor power supply, thermopile and the like.
  • PCR equipment is a device for amplifying DNA to determine the DNA sequence, precise temperature control is required, and a thermal cycle (thermal cycle) equipment is required.
  • a Peltier-based thermoelectric device may be applied.
  • thermoelectric device Another example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a medical device is a photo detector.
  • the photo detector includes an infrared / ultraviolet detector, a charge coupled device (CCD) sensor, an X-ray detector, a thermoelectric thermal reference source (TTRS), and the like.
  • a Peltier-based thermoelectric device may be applied to cool the photo detector. As a result, it is possible to prevent a change in wavelength, a decrease in power, a decrease in resolution, etc. due to a temperature rise inside the photodetector.
  • thermoelectric device As another example in which a thermoelectric device according to an embodiment of the present invention is applied to a medical device, an immunoassay field, an in vitro diagnostic field, a general temperature control and cooling system, Physiotherapy, liquid chiller systems, blood / plasma temperature control. Thus, precise temperature control is possible.
  • thermoelectric device according to the embodiment of the present invention is applied to a medical device.
  • a medical device is an artificial heart.
  • power can be supplied to the artificial heart.
  • thermoelectric device examples include a star tracking system, a thermal imaging camera, an infrared / ultraviolet detector, a CCD sensor, a hubble space telescope, and a TTRS. Accordingly, the temperature of the image sensor can be maintained.
  • thermoelectric device according to the embodiment of the present invention is applied to the aerospace industry includes a cooling device, a heater, a power generation device, and the like.
  • thermoelectric device according to the embodiment of the present invention may be applied for power generation, cooling, and heating in other industrial fields.

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Un dispositif thermoélectrique selon un mode de réalisation de la présente invention comprend : un premier support métallique ; une première couche de liaison disposée sur le premier support métallique ; une première couche de résine disposée sur la première couche de liaison ; une pluralité de premières électrodes disposées sur la première couche de résine ; une pluralité de pattes thermoélectriques de type P et une pluralité de pattes thermoélectriques de type N disposées sur la pluralité de premières électrodes ; une pluralité de secondes électrodes disposées sur la pluralité de pattes thermoélectriques de type P et la pluralité de pattes thermoélectriques de type N ; une seconde couche de résine disposée sur la pluralité de secondes électrodes ; une seconde couche de liaison disposée sur la seconde couche de résine ; et un second support métallique disposé sur la seconde couche de liaison, le dispositif thermoélectrique comprenant en outre au moins une électrode factice disposée sur la première couche de résine, et l'au moins une électrode factice étant disposée sur le côté de la rangée la plus à l'extérieure et/ou de la colonne la plus à l'extérieur de la pluralité de premières électrodes.
PCT/KR2019/001276 2018-02-01 2019-01-30 Dispositif thermoélectrique Ceased WO2019151765A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16/963,990 US20210036204A1 (en) 2018-02-01 2019-01-30 Thermoelectric device
EP19747083.4A EP3748704B1 (fr) 2018-02-01 2019-01-30 Dispositif thermoélectrique
JP2020541410A JP7387612B2 (ja) 2018-02-01 2019-01-30 熱電装置
CN201980011431.9A CN111699562B (zh) 2018-02-01 2019-01-30 热电装置

Applications Claiming Priority (4)

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KR10-2018-0013055 2018-02-01
KR20180013055 2018-02-01
KR1020190011340A KR102724358B1 (ko) 2018-02-01 2019-01-29 열전장치
KR10-2019-0011340 2019-01-29

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US20230044428A1 (en) * 2020-10-26 2023-02-09 Lg Innotek Co., Ltd. Thermoelectric device
JP2023512476A (ja) * 2020-01-16 2023-03-27 エルジー イノテック カンパニー リミテッド 発電装置
JP2023518572A (ja) * 2020-03-25 2023-05-02 エルジー イノテック カンパニー リミテッド 熱電素子

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JP2000349351A (ja) * 1999-06-03 2000-12-15 Yamaha Corp 熱電モジュール
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JP2023512476A (ja) * 2020-01-16 2023-03-27 エルジー イノテック カンパニー リミテッド 発電装置
JP7642654B2 (ja) 2020-01-16 2025-03-10 エルジー イノテック カンパニー リミテッド 発電装置
JP2023518572A (ja) * 2020-03-25 2023-05-02 エルジー イノテック カンパニー リミテッド 熱電素子
JP7703560B2 (ja) 2020-03-25 2025-07-07 エルジー イノテック カンパニー リミテッド 熱電素子
US20230044428A1 (en) * 2020-10-26 2023-02-09 Lg Innotek Co., Ltd. Thermoelectric device
US12507592B2 (en) * 2020-10-26 2025-12-23 Lg Innotek Co., Ltd. Thermoelectric device

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