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WO2019151765A1 - Thermoelectric device - Google Patents

Thermoelectric device Download PDF

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Publication number
WO2019151765A1
WO2019151765A1 PCT/KR2019/001276 KR2019001276W WO2019151765A1 WO 2019151765 A1 WO2019151765 A1 WO 2019151765A1 KR 2019001276 W KR2019001276 W KR 2019001276W WO 2019151765 A1 WO2019151765 A1 WO 2019151765A1
Authority
WO
WIPO (PCT)
Prior art keywords
disposed
terminal connection
connection electrode
resin layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2019/001276
Other languages
French (fr)
Korean (ko)
Inventor
구진아
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190011340A external-priority patent/KR102724358B1/en
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to US16/963,990 priority Critical patent/US20210036204A1/en
Priority to EP19747083.4A priority patent/EP3748704B1/en
Priority to JP2020541410A priority patent/JP7387612B2/en
Priority to CN201980011431.9A priority patent/CN111699562B/en
Publication of WO2019151765A1 publication Critical patent/WO2019151765A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/81Structural details of the junction
    • H10N10/817Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/82Interconnections

Definitions

  • the present invention relates to a thermoelectric element, and more particularly, to a substrate and an electrode structure included in the thermoelectric device.
  • Thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes in a material, and means a direct energy conversion between heat and electricity.
  • thermoelectric device is a generic term for a device using a thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.
  • Thermoelectric elements may be classified into a device using a temperature change of the electrical resistance, a device using the Seebeck effect, a phenomenon in which electromotive force is generated by a temperature difference, a device using a Peltier effect, a phenomenon in which endothermic or heat generation by current occurs. .
  • thermoelectric devices have been applied to a variety of home appliances, electronic components, communication components, and the like.
  • the thermoelectric element may be applied to a cooling device, a heating device, a power generating device, or the like. Accordingly, the demand for thermoelectric performance of thermoelectric elements is increasing.
  • the thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, and a plurality of thermoelectric legs are arranged in an array form between the upper substrate and the lower substrate, and a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate.
  • a plurality of lower electrodes are disposed between the thermoelectric leg and the lower substrate.
  • the plurality of upper electrodes and the plurality of lower electrodes connect the thermoelectric legs in series or in parallel.
  • thermoelectric element may be disposed on a metal support.
  • the metal support, the substrate and the electrode may be aligned and then pressurized.
  • a thermoelectric element disposed on a metal support may be referred to as a thermoelectric module or a thermoelectric device.
  • Fig. 1 (a) shows a step of manufacturing the lower substrate side of the thermoelectric device
  • Fig. 1 (b) is a sectional view of the lower substrate side of the thermoelectric device.
  • the bonding layer 70 is disposed between the first resin layer 51 and the metal support 60 on which the plurality of lower electrodes 52 are disposed, and then pressurized. can do. As a result, a structure in which the bonding layer 70 is disposed on the metal support 60 and the first resin layer 51 and the plurality of lower electrodes 52 are disposed on the bonding layer 70 can be obtained.
  • the bonding layer 70 is disposed between the first resin layer 51 and the metal support 60 on which the plurality of lower electrodes 52 are disposed, and then pressurized. In this case, there is a possibility that pressure is not evenly applied to the first resin layer 51 as a whole, and thus a portion where the bonding strength is weak may occur.
  • the height difference between the first resin layer 51 and the lower electrode 52 is about 0.3 mm, it is applied to the region A in which the lower electrode 52 is not disposed in the first resin layer 51.
  • the pressure may be lower than the pressure applied to the region where the lower electrode 52 is disposed. Accordingly, sufficient pressure may not be applied to the edge of the first resin layer 51 in which the lower electrode 52 is not disposed, and the edge of the first resin layer 51 may be peeled off from the metal support 60. This is high.
  • the technical problem to be achieved by the present invention is to provide a substrate and electrode structure of the thermoelectric element.
  • thermoelectric device includes a first metal support, a first bonding layer disposed on the first metal support, a first resin layer disposed on the first bonding layer, and a first resin layer on the first metal support.
  • a plurality of first electrodes arranged on the substrate, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, the plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs A plurality of second electrodes, a second resin layer disposed on the plurality of second electrodes, a second bonding layer disposed on the second resin layer, and a second metal support disposed on the second bonding layer And at least one dummy electrode disposed on the first resin layer, wherein the at least one dummy electrode is disposed on at least one side of an outermost row and an outermost column of the plurality of first electrodes. Is placed.
  • the at least one dummy electrode may include a plurality of dummy electrodes spaced at predetermined intervals.
  • An area of the first resin layer may be larger than an area of the second resin layer.
  • the plurality of first electrodes includes a first terminal connection electrode disposed at one corner of the plurality of first electrodes and a second terminal connection electrode disposed at another corner of the same row or the same column as the first terminal connection electrode. And the first terminal connection electrode and the second terminal connection electrode extend in an edge direction of the first resin layer from a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed.
  • the dummy electrode may be disposed between the first terminal connection electrode and the second terminal connection electrode.
  • the plurality of dummy electrodes may be disposed along side surfaces of a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed.
  • the first terminal connection electrode is further extended in a direction parallel to the row or column where the first terminal connection electrode and the second terminal connection electrode are disposed and toward the second terminal connection electrode, and the second terminal connection electrode is the The first terminal connection electrode and the second terminal connection electrode may be further extended in a direction parallel to the row or column in which the first terminal connection electrode is disposed.
  • the at least one dummy electrode may be made of the same material as the plurality of first electrodes.
  • the at least one dummy electrode may have the same thickness as the plurality of first electrodes.
  • the first resin layer may include an epoxy resin and an inorganic filler, and the inorganic filler may include at least one of aluminum oxide, boron nitride, and aluminum nitride.
  • thermoelectric device having excellent thermal conductivity and high reliability.
  • thermoelectric device according to the embodiment of the present invention has a high bonding strength with the metal support and facilitates wire connection.
  • Fig. 1 (a) shows a step of manufacturing the lower substrate side of the thermoelectric device
  • Fig. 1 (b) is a sectional view of the lower substrate side of the thermoelectric device.
  • thermoelectric element 2 is a sectional view of a thermoelectric element
  • FIG. 3 is a perspective view of the thermoelectric element.
  • thermoelectric device 4 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention.
  • thermoelectric device 5 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to an exemplary embodiment of the present invention.
  • thermoelectric device 6 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to another exemplary embodiment of the present invention.
  • thermoelectric device 7 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to still another embodiment of the present invention.
  • thermoelectric device 8 is an example of experiments on the resin layer bonding strength of the thermoelectric device manufactured according to the embodiment.
  • thermoelectric device 9 is an example in which the resin layer bonding strength of the thermoelectric device manufactured according to the comparative example was tested.
  • thermoelectric element 10 is an exemplary diagram in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.
  • thermoelectric element 11 is an exemplary view in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator.
  • ordinal numbers such as second and first
  • first and second components may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component.
  • thermoelectric element 2 is a sectional view of a thermoelectric element
  • FIG. 3 is a perspective view of the thermoelectric element.
  • the thermoelectric element 100 includes a lower substrate 110, a lower electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, an upper electrode 150, and an upper substrate. 160.
  • the lower electrode 120 is disposed between the lower substrate 110, the lower surface of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 is the upper substrate 160 and the P-type thermoelectric leg. Disposed between the top surface of the 130 and the N-type thermoelectric leg 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the lower electrode 120 and the upper electrode 150. A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 disposed between the lower electrode 120 and the upper electrode 150 and electrically connected to each other may form a unit cell.
  • thermoelectric leg 130 when a voltage is applied to the lower electrode 120 and the upper electrode 150 through the lead wires 181 and 182, a current is transmitted from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect.
  • the flowing substrate absorbs heat to act as a cooling unit, and the substrate flowing current from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 may be heated to act as a heat generating unit.
  • thermoelectric leg 130 and the N-type thermoelectric leg 140 may move due to the Seebeck effect, and electricity may be generated.
  • the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth fluoride (Bi-Te) -based thermoelectric legs including bismuth (Bi) and tellurium (Te) as main materials.
  • P-type thermoelectric leg 130 is antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt%
  • a mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%.
  • the main raw material is Bi-Se-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.
  • N-type thermoelectric leg 140 is selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt%
  • a mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001
  • the main raw material is Bi-Sb-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.
  • the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or a stacked type.
  • the bulk P-type thermoelectric leg 130 or the bulk N-type thermoelectric leg 140 is heat-treated thermoelectric material to produce an ingot (ingot), crushed and ingot to obtain a powder for thermoelectric leg, then Sintering, and can be obtained through the process of cutting the sintered body.
  • the stacked P-type thermoelectric leg 130 or the stacked N-type thermoelectric leg 140 is formed by applying a paste including a thermoelectric material on a sheet-shaped substrate to form a unit member, and then stacking and cutting the unit members. Can be obtained.
  • the pair of P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have the same shape and volume, or may have different shapes and volumes.
  • the height or the cross-sectional area of the N-type thermoelectric leg 140 is the height or the cross-sectional area of the P-type thermoelectric leg 130. It can also be formed differently.
  • thermoelectric performance index ZT
  • Equation 1 The thermoelectric performance index (ZT) can be expressed as in Equation 1.
  • is the Seebeck coefficient [V / K]
  • sigma is the electrical conductivity [S / m]
  • ⁇ 2 sigma is the Power Factor [W / mK 2 ].
  • T is the temperature and k is the thermal conductivity [W / mK].
  • k can be represented by a ⁇ c p ⁇ ⁇ , a is thermal diffusivity [cm 2 / S], c p is specific heat [J / gK], and ⁇ is density [g / cm 3 ].
  • thermoelectric performance index of the thermoelectric device In order to obtain a thermoelectric performance index of the thermoelectric device, the Z value (V / K) may be measured using a Z meter, and the thermoelectric performance index (ZT) may be calculated using the measured Z value.
  • the upper electrode 150 disposed between the thermoelectric legs 140 may include at least one of copper (Cu), silver (Ag), and nickel (Ni).
  • the sizes of the lower substrate 110 and the upper substrate 160 may be formed differently.
  • the volume, thickness, or area of one of the lower substrate 110 and the upper substrate 160 may be larger than the volume, thickness, or area of the other. Accordingly, the heat absorbing performance or heat dissipation performance of the thermoelectric element can be improved.
  • the volume, thickness or area of the lower substrate 110 may be greater than at least one of the volume, thickness or area of the upper substrate 160. In this case, when the lower substrate 110 is disposed in the high temperature region for the Seebeck effect, the heating member is applied to the heating region for the Peltier effect or the sealing member for protection from the external environment of the thermoelectric module to be described later is provided on the lower substrate 110.
  • an area of the lower substrate 110 may be formed in a range of 1.2 to 5 times the area of the upper substrate 160.
  • the area of the lower substrate 110 is less than 1.2 times that of the upper substrate 160, the effect on improving the heat transfer efficiency is not high, and when the excess exceeds 5 times, the heat transfer efficiency is significantly lowered, and the thermoelectric module Maintaining its basic shape can be difficult.
  • a heat radiation pattern for example, an uneven pattern may be formed on at least one surface of the lower substrate 110 and the upper substrate 160.
  • the heat dissipation performance of the thermoelectric element can be improved.
  • the uneven pattern is formed on the surface in contact with the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, the bonding characteristics between the thermoelectric leg and the substrate can also be improved.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal pillar shape, an elliptical pillar shape and the like.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure.
  • the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-shaped substrate and then cutting them. As a result, it is possible to prevent loss of material and to improve electrical conduction characteristics.
  • the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method.
  • a zone melting method an ingot is manufactured by using a thermoelectric material, and then, by slowly applying heat to the ingot, the particles are rearranged so as to be rearranged in a single direction, and the thermoelectric leg is slowly cooled.
  • the powder sintering method after manufacturing an ingot using a thermoelectric material, the ingot is pulverized and sieved to obtain a thermoelectric leg powder, and the thermoelectric leg is obtained through the sintering process.
  • a sealing member may be further disposed between the lower substrate 110 and the upper substrate 160.
  • the sealing member may be disposed on side surfaces of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 between the lower substrate 110 and the upper substrate 160. . Accordingly, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 may be sealed from external moisture, heat, and contamination.
  • the sealing member is the outermost of the plurality of lower electrodes 120, the outermost of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 and the outermost of the plurality of upper electrodes 150.
  • the sealing case may be spaced apart from a side surface of the sealing case, and may include a sealing material disposed between the sealing case and the lower substrate 110 and a sealing material disposed between the sealing case and the upper substrate 160. As such, the sealing case may contact the lower substrate 110 and the upper substrate 160 through the sealing material. Accordingly, when the sealing case is in direct contact with the lower substrate 110 and the upper substrate 160, heat conduction occurs through the sealing case, and as a result, a temperature difference between the lower substrate 110 and the upper substrate 160 is lowered. Can be prevented.
  • the sealing material may include at least one of an epoxy resin and a silicone resin, or at least one of an epoxy resin and a silicone resin may include a tape coated on both surfaces.
  • the sealing material serves to hermetically seal between the sealing case and the lower substrate 110 and between the sealing case and the upper substrate 160, and the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and The sealing effect of the upper electrode 150 may be increased and may be mixed with a finish, a finish layer, a waterproof material, a waterproof layer, and the like.
  • the sealing material sealing between the sealing case and the lower substrate 110 is disposed on the upper surface of the lower substrate 110
  • the sealing material sealing between the sealing case and the upper substrate 160 is disposed on the side of the upper substrate 160.
  • the area of the lower substrate 110 may be larger than the area of the upper substrate 160.
  • the sealing case guide grooves for drawing lead wires 180 and 182 connected to the electrodes may be formed.
  • the sealing case may be an injection molding made of plastic or the like, and may be mixed with the sealing cover.
  • sealing member is only an example, and the sealing member may be modified in various forms.
  • a heat insulating material may be further included to surround the sealing member.
  • the sealing member may include a heat insulating component.
  • the pressure applied to the substrate during the bonding between the substrate and the metal support is evened to increase the bonding strength between the substrate and the metal support.
  • FIG. 4 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention
  • FIG. 5 is a top view of a resin layer and an electrode structure included in the thermoelectric device according to an embodiment of the present invention
  • FIG. 6 is another view of the present invention.
  • Figure 7 is a top view of the resin layer and electrode structure included in the thermoelectric device according to another embodiment of the present invention.
  • thermoelectric device 400 is disposed on the first metal support 410, the first bonding layer 420 disposed on the first metal support 410, and the first bonding layer 420.
  • the first resin layer 430, the first electrode 440, the P-type thermoelectric leg 450, the N-type thermoelectric leg 455, the second electrode 460, and the second resin layer 470 are respectively illustrated.
  • a heat sink may be disposed on at least one of the first metal support 410 and the second metal support 490.
  • a heat sink may be attached to a surface opposite to a surface on which the bonding layer 420 is disposed on both surfaces of the first metal support 410, and the bonding layer 480 among the both surfaces of the second metal support 490.
  • the heat sink may be attached to the surface opposite to the surface on which the arrangement is made.
  • the first metal support 410 and the heat sink may be integrally formed, and the second metal support 490 and the heat sink may be integrally formed.
  • thermoelectric element may include a first metal support 410, a first resin layer 430, a first electrode 440, a P-type thermoelectric leg 450, an N-type thermoelectric leg 455, and a second electrode ( 460, the second resin layer 470, and the second metal support 490 may be included.
  • thermoelectric element may include a first metal support 410, a first resin layer 430, a first electrode 440, a P-type thermoelectric leg 450, and an N-type thermoelectric to which a heat sink is attached or integrally formed with the heat sink.
  • the leg 455, the second electrode 460, the second resin layer 470, and the heat sink may be attached to or include a second metal support 490 formed integrally with the heat sink.
  • the first metal support 410 and the second metal support 490 may be made of aluminum, an aluminum alloy, copper, a copper alloy, or the like.
  • the first metal support 410 and the second metal support 490 may include a first resin layer 430, a plurality of first electrodes 440, a plurality of P-type thermoelectric legs 450, and a plurality of N-type thermoelectric legs ( 455, the plurality of second electrodes 460, the second resin layer 470, and the like.
  • an area of the first metal support 410 may be larger than an area of the first resin layer 430
  • an area of the second metal support 490 may be larger than an area of the second resin layer 470. .
  • the first resin layer 430 may be disposed in an area spaced apart from the edge of the first metal support 410 by a predetermined distance
  • the second resin layer 470 may be disposed from the edge of the second metal support 470. It may be disposed in an area spaced by a predetermined distance.
  • a heat sink may be formed on a surface opposite to a surface on which the first resin layer 430 is disposed on both surfaces of the first metal support 410.
  • a heat sink may be formed on a surface opposite to a surface on which the second resin layer 470 is disposed on both surfaces of the second metal support 490.
  • each of the first metal support 410 and the second metal support 490 may be integrally formed with the heat sink.
  • the first resin layer 430 and the second resin layer 470 may be formed of a resin composition including a resin and an inorganic filler.
  • the first resin layer 430 and the second resin layer 470 may have a thickness of 0.01 to 0.65 mm, preferably 0.01 to 0.6 mm, more preferably 0.01 to 0.55 mm, and a thermal conductivity of 10 W / mK or more. , Preferably 20W / mK or more, more preferably 30W / mK or more.
  • the resin may include an epoxy resin or a silicone resin.
  • the silicone resin may include, for example, polydimethylsiloxane (PDMS).
  • the epoxy resin may comprise an epoxy compound and a curing agent. At this time, it may be included in 1 to 10 volume ratio of the curing agent with respect to 10 volume ratio of the epoxy compound.
  • the epoxy compound may include at least one of a crystalline epoxy compound, an amorphous epoxy compound and a silicon epoxy compound.
  • the crystalline epoxy compound may comprise a mesogen structure. Mesogen is a basic unit of liquid crystal and includes a rigid structure.
  • the amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in a molecule, and may be, for example, glycidyl etherate derived from bisphenol A or bisphenol F.
  • the curing agent may include at least one of an amine curing agent, a phenol curing agent, an acid anhydride curing agent, a polycapcaptan curing agent, a polyaminoamide curing agent, an isocyanate curing agent, and a block isocyanate curing agent, and two or more kinds of curing agents. It can also be mixed and used.
  • the inorganic filler may include an aluminum oxide and a plurality of plate-like boron nitride agglomerates.
  • the inorganic filler may further include aluminum nitride.
  • the surface of the boron nitride agglomerate may be modified to increase the affinity with the resin.
  • the surface of the boron nitride agglomerate may be coated with a polymer material having a high affinity for the resin, or at least a part of the pores in the boron nitride agglomerate may be filled with a polymer material having a high affinity for the resin. have.
  • the first bonding layer 420 and the second bonding layer 480 may be a thermal interface material (TIM).
  • the first bonding layer 420 and the second bonding layer 480 may be the same resin composition as the resin composition forming the first resin layer 430 and the second resin layer 470. That is, the same resin composition as the resin composition constituting the first resin layer 430 and the second resin layer 470 is applied on the first metal support 410 and the second metal support 490 in an uncured state.
  • the first resin layer 430 and the second resin layer 470 are laminated in a cured state, and the first resin layer 430 and the second resin layer 470 and the first metal support are formed by pressing at a high temperature. 410 and the second metal support 490 may be bonded.
  • the plurality of first electrodes 440 and the plurality of second electrodes 460 may be disposed on a semi-cured resin composition of the first resin layer 430 and the second resin layer 470.
  • the Cu substrate may be manufactured by etching the Cu substrate into an electrode shape.
  • it may also be manufactured by pressing.
  • the first bonding layer 420 and the second bonding layer 480 may be omitted.
  • the radius It after applying the resin composition constituting the first resin layer 430 and the second resin layer 470 on the first metal support 410 and the second metal support 490 in an uncured state, the radius It may be pressurized after arranging a Cu substrate or a pre-aligned electrode in a state of being converted.
  • a pair of P-type thermoelectric legs 450 and N-type thermoelectric legs 455 may be disposed on each first electrode 440, and may be disposed on each first electrode 440 on each second electrode 460.
  • a pair of N-type thermoelectric legs 455 and P-type thermoelectric legs 450 may be disposed such that one of the pair of P-type thermoelectric legs 450 and the N-type thermoelectric legs 455 overlap.
  • At least one dummy electrode 500 may be further disposed on the first resin layer 430.
  • the at least one dummy electrode 500 may be disposed on at least one side of the outermost row and the outermost column of the plurality of first electrodes 440.
  • the dummy electrode 500 has the same material and the same thickness as the plurality of first electrodes 440, but thermoelectric legs are not disposed on the dummy electrode 500 and may not be electrically connected to the dummy electrode 500.
  • the dummy electrode 500 may be disposed to be spaced apart from the plurality of first electrodes 440. In this case, the plurality of dummy electrodes 500 may be spaced apart from each other at predetermined intervals.
  • the dummy electrode 500 may have the same shape as the first electrode 440 or may have a different shape.
  • the thicknesses of the dummy electrode 500 and the plurality of first electrodes 440 are equal to 60% to 140%, preferably 75% to 125% of the individual thicknesses of the plurality of first electrodes 440.
  • the bonding strength may be 90% to 110%. If less than 60% and greater than 140%, there is a possibility that the pressure is not evenly distributed. If less than 60%, there may be a weak portion of the bonding strength at the position where the dummy electrode 500 is disposed. A portion where the bonding strength is weak at the position where the outermost row and outermost column of the first electrode 440 are disposed may be generated.
  • the bonding between the first resin layer 430 and the metal support 410 is performed.
  • the edge region of the first resin layer 430 and the metal support 410 are high. It can be bonded with bond strength.
  • the plurality of first electrodes 440 may include a first terminal connection electrode 442 for connecting the first terminal and a second terminal for connecting a second terminal having a different polarity from the first terminal.
  • the terminal connection electrode 444 may be included.
  • the first terminal connection electrode 442 is disposed at one corner of the plurality of first electrodes 440, and the second terminal connection electrode 444 is the same row or the same as the first terminal connection electrode 442. It can be placed at the other edge of the column.
  • One of the P-type thermoelectric leg and the N-type thermoelectric leg may be disposed in each of the first terminal connection electrode 442 and the second terminal connection electrode 444.
  • the first terminal and the second terminal may be connected to each of the first terminal connection electrode 442 and the second terminal connection electrode 444 through a wire.
  • the first terminal connection electrode 442 and the second terminal connection electrode 444 may be formed larger than the other first electrodes 440.
  • the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed with the first terminal connection electrode 442 and the second terminal connection electrode 444, respectively. It may extend in the edge direction of the first resin layer 430 from the row or column.
  • the first terminal connection electrode 442 is parallel to the row or column in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed, and the second terminal connection is performed.
  • the second terminal connection electrode 444 is parallel to the row or column in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed, and the first terminal connection; It may further extend in the direction toward the electrode 442. That is, each of the first terminal connection electrode 442 and the second terminal connection electrode 444 may have a “b” shape.
  • the plurality of dummy electrodes 500 includes a row in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed between the first terminal connection electrode 442 and the second terminal connection electrode 444. Or along the side of the column.
  • the dummy electrode that is, the plurality of dummy electrodes 500 is disposed between the first terminal connection electrode 442 and the second terminal connection electrode 444
  • the first terminal connection electrode 442 and the second terminal connection are disposed.
  • the electrode 444 is formed large, the pressure applied to the region between the first terminal connection electrode 442 and the second terminal connection electrode 444 is equal to the pressure applied to the region where the other first electrodes 440 are disposed. You can keep it at the same level. Thereby, it is possible to maintain the high bond strength between the first resin layer 430 and the first metal support 410 as a whole.
  • the area of the first resin layer 430 is the area of the second resin layer 470. It can be made larger. Accordingly, the size of the first terminal connection electrode 442 and the second terminal connection electrode 444 may be larger than that of the other first electrodes 440 to facilitate wire connection. The area for arranging the dummy electrode 500 can be secured.
  • FIG. 6 to 7 illustrate that a plurality of dummy electrodes 500 that are dummy electrodes are disposed only between the first terminal connection electrode 442 and the second terminal connection electrode 444, but the present invention is not limited thereto. As shown in FIG. 2, the plurality of dummy electrodes 500 may be further disposed on the side of the outermost row or outermost column of the plurality of first electrodes 440.
  • the dummy electrode 500 for bonding between the first resin layer 430 and the first metal support 410 is disposed as an example, but is not limited thereto, and the second resin layer ( A dummy electrode (not shown) for bonding between the 470 and the second metal support 490 may also be formed in the second resin layer.
  • thermoelectric element 8 is an example of experimenting the resin layer bonding strength of the thermoelectric element manufactured according to the embodiment
  • Figure 9 is an example of experimenting the resin layer bonding strength of the thermoelectric element produced according to the comparative example.
  • FIG. 8 (a) in the embodiment, a plurality of electrodes and a plurality of dummy electrodes are disposed in the resin layer in the structure of FIG. 7, and as shown in FIG. 9 (a), in the comparative example, FIG. 7. Only a plurality of electrodes were disposed in the resin layer except for the plurality of dummy electrodes in the structure of.
  • the rear surface of the resin layer and the metal support bonded to each other is an area of the edge of the resin layer, in particular, between the first terminal connection electrode 442 and the second terminal connection electrode 444. It can be seen that even at (800), no lifting or peeling occurs and high bonding strength is maintained.
  • the rear surface of the resin layer and the metal support bonded to each other according to the comparative example is formed at the edge of the resin layer, in particular, the first terminal connection electrode 442 and the second terminal connection electrode 444. It can be seen that the region 900 between them is easily peeled off.
  • thermoelectric element according to an exemplary embodiment of the present invention is applied to a water purifier will be described with reference to FIG. 10.
  • thermoelectric element 10 is an exemplary diagram in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.
  • the water purifier 1 to which the thermoelectric element is applied includes a raw water supply pipe 12a, a water purification tank inlet pipe 12b, a water purification tank 12, a filter assembly 13, a cooling fan 14, and a heat storage tank ( 15), a cold water supply pipe 15a, and a thermoelectric device 1000.
  • the raw water supply pipe 12a is a supply pipe for introducing purified water from the water source into the filter assembly 13, and the purified water tank inflow pipe 12b is an inflow for introducing purified water from the filter assembly 13 into the purified water tank 12.
  • the cold water supply pipe 15a is a supply pipe through which the cold water cooled to the predetermined temperature by the thermoelectric device 1000 in the purified water tank 12 is finally supplied to the user.
  • the purified water tank 12 temporarily receives the purified water through the filter assembly 13 to store and supply the purified water introduced through the purified water tank inlet 12b to the outside.
  • the filter assembly 13 is composed of a precipitation filter 13a, a pre carbon filter 13b, a membrane filter 13c, and a post carbon filter 13d.
  • the water flowing into the raw water supply pipe 12a may be purified through the filter assembly 13.
  • the heat storage tank 15 is disposed between the purified water tank 12 and the thermoelectric device 1000 to store cold air formed in the thermoelectric device 1000.
  • the cold air stored in the heat storage tank 15 is applied to the purified water tank 12 to cool the water contained in the purified water tank 120.
  • the heat storage tank 15 may be in surface contact with the purified water tank 12 so that the cold air may be smoothly transferred.
  • thermoelectric device 1000 includes a heat absorbing surface and a heat generating surface, and one side is cooled and the other side is heated by electron movement on the P-type semiconductor and the N-type semiconductor.
  • one side may be the purified water tank 12 side, the other side may be the opposite side of the purified water tank 12.
  • thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the purified water tank 12 in the water purifier.
  • thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator will be described with reference to FIG. 11.
  • thermoelectric element 11 is an exemplary view in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator.
  • the refrigerator includes a deep evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric device 1000 in the deep evaporation chamber.
  • the inside of the refrigerator is partitioned into a deep storage compartment and a deep evaporation chamber by a deep evaporation chamber cover 23.
  • an inner space corresponding to the front of the deep evaporation chamber cover 23 may be defined as a deep storage chamber, and an inner space corresponding to the rear of the deep evaporation chamber cover 23 may be defined as a deep temperature evaporation chamber.
  • Discharge grille 23a and suction grille 23b may be respectively formed on the front surface of the deep-temperature evaporation chamber cover 23.
  • the evaporation compartment partition wall 24 is installed at a point spaced forward from the rear wall of the inner cabinet to partition the space in which the depth chamber storage system is placed and the space in which the main evaporator 25 is placed.
  • the cold air cooled by the main evaporator 25 is supplied to the freezer compartment and then returned to the main evaporator again.
  • thermoelectric device 1000 is accommodated in the deep-temperature evaporation chamber, and the heat absorbing surface faces the drawer assembly side of the deep storage chamber, and the heat generating surface faces the evaporator side. Therefore, by using the endothermic phenomenon generated in the thermoelectric device 1000 can be used to quickly cool the food stored in the drawer assembly to an ultra-low temperature state of less than 50 degrees Celsius.
  • thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the drawer assembly in the refrigerator.
  • thermoelectric element may act on the apparatus for power generation, the apparatus for cooling, the apparatus for heating, and the like.
  • the thermoelectric device according to the embodiment of the present invention mainly includes an optical communication module, a sensor, a medical device, a measuring device, an aerospace industry, a refrigerator, a chiller, a car ventilation sheet, a cup holder, a washing machine, a dryer, and a wine cellar. It can be applied to water purifier, sensor power supply, thermopile and the like.
  • PCR equipment is a device for amplifying DNA to determine the DNA sequence, precise temperature control is required, and a thermal cycle (thermal cycle) equipment is required.
  • a Peltier-based thermoelectric device may be applied.
  • thermoelectric device Another example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a medical device is a photo detector.
  • the photo detector includes an infrared / ultraviolet detector, a charge coupled device (CCD) sensor, an X-ray detector, a thermoelectric thermal reference source (TTRS), and the like.
  • a Peltier-based thermoelectric device may be applied to cool the photo detector. As a result, it is possible to prevent a change in wavelength, a decrease in power, a decrease in resolution, etc. due to a temperature rise inside the photodetector.
  • thermoelectric device As another example in which a thermoelectric device according to an embodiment of the present invention is applied to a medical device, an immunoassay field, an in vitro diagnostic field, a general temperature control and cooling system, Physiotherapy, liquid chiller systems, blood / plasma temperature control. Thus, precise temperature control is possible.
  • thermoelectric device according to the embodiment of the present invention is applied to a medical device.
  • a medical device is an artificial heart.
  • power can be supplied to the artificial heart.
  • thermoelectric device examples include a star tracking system, a thermal imaging camera, an infrared / ultraviolet detector, a CCD sensor, a hubble space telescope, and a TTRS. Accordingly, the temperature of the image sensor can be maintained.
  • thermoelectric device according to the embodiment of the present invention is applied to the aerospace industry includes a cooling device, a heater, a power generation device, and the like.
  • thermoelectric device according to the embodiment of the present invention may be applied for power generation, cooling, and heating in other industrial fields.

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Abstract

A thermoelectric device according to an embodiment of the present invention comprises: a first metal support; a first bonding layer disposed on the first metal support; a first resin layer disposed on the first bonding layer; a plurality of first electrodes arranged on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; a second bonding layer disposed on the second resin layer; and a second metal support disposed on the second bonding layer, wherein the thermoelectric device further comprises at least one dummy electrode disposed on the first resin layer, and the at least one dummy electrode is disposed on the side of at least one of the outermost row and the outermost column of the plurality of first electrodes.

Description

열전장치Thermoelectric

본 발명은 열전소자에 관한 것으로, 보다 상세하게는 열전장치에 포함되는 기판 및 전극 구조에 관한 것이다.The present invention relates to a thermoelectric element, and more particularly, to a substrate and an electrode structure included in the thermoelectric device.

열전현상은 재료 내부의 전자(electron)와 정공(hole)의 이동에 의해 발생하는 현상으로, 열과 전기 사이의 직접적인 에너지 변환을 의미한다.Thermoelectric phenomenon is a phenomenon caused by the movement of electrons and holes in a material, and means a direct energy conversion between heat and electricity.

열전소자는 열전현상을 이용하는 소자를 총칭하며, P형 열전 재료와 N형 열전 재료를 금속 전극들 사이에 접합시켜 PN 접합 쌍을 형성하는 구조를 가진다. The thermoelectric device is a generic term for a device using a thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are bonded between metal electrodes to form a PN junction pair.

열전소자는 전기저항의 온도 변화를 이용하는 소자, 온도 차에 의해 기전력이 발생하는 현상인 제벡 효과를 이용하는 소자, 전류에 의한 흡열 또는 발열이 발생하는 현상인 펠티에 효과를 이용하는 소자 등으로 구분될 수 있다.Thermoelectric elements may be classified into a device using a temperature change of the electrical resistance, a device using the Seebeck effect, a phenomenon in which electromotive force is generated by a temperature difference, a device using a Peltier effect, a phenomenon in which endothermic or heat generation by current occurs. .

열전소자는 가전제품, 전자부품, 통신용 부품 등에 다양하게 적용되고 있다. 예를 들어, 열전소자는 냉각용 장치, 온열용 장치, 발전용 장치 등에 적용될 수 있다. 이에 따라, 열전소자의 열전성능에 대한 요구는 점점 더 높아지고 있다.Thermoelectric devices have been applied to a variety of home appliances, electronic components, communication components, and the like. For example, the thermoelectric element may be applied to a cooling device, a heating device, a power generating device, or the like. Accordingly, the demand for thermoelectric performance of thermoelectric elements is increasing.

열전소자는 기판, 전극 및 열전 레그를 포함하며, 상부기판과 하부기판 사이에 복수의 열전 레그가 어레이 형태로 배치되며, 복수의 열전 레그와 상부기판 사이에 복수의 상부 전극이 배치되고, 복수의 열전 레그와 및 하부기판 사이에 복수의 하부전극이 배치된다. 여기서, 복수의 상부전극 및 복수의 하부전극은 열전 레그들을 직렬 또는 병렬 연결한다.The thermoelectric element includes a substrate, an electrode, and a thermoelectric leg, and a plurality of thermoelectric legs are arranged in an array form between the upper substrate and the lower substrate, and a plurality of upper electrodes are disposed between the plurality of thermoelectric legs and the upper substrate. A plurality of lower electrodes are disposed between the thermoelectric leg and the lower substrate. Here, the plurality of upper electrodes and the plurality of lower electrodes connect the thermoelectric legs in series or in parallel.

일반적으로, 열전소자는 금속 지지체 상에 배치될 수 있다. 이를 위하여, 금속 지지체, 기판 및 전극을 정렬한 후 가압할 수 있다. 본 명세서에서, 금속 지지체 상에 배치된 열전소자를 열전모듈 또는 열전장치라 지칭할 수 있다. In general, the thermoelectric element may be disposed on a metal support. To this end, the metal support, the substrate and the electrode may be aligned and then pressurized. In the present specification, a thermoelectric element disposed on a metal support may be referred to as a thermoelectric module or a thermoelectric device.

도 1(a)는 열전장치의 하부 기판 측을 제조하는 공정을 나타내고, 도 1(b)는 열전장치의 하부 기판 측의 단면도이다.Fig. 1 (a) shows a step of manufacturing the lower substrate side of the thermoelectric device, and Fig. 1 (b) is a sectional view of the lower substrate side of the thermoelectric device.

도 1(a) 및 1(b)를 참조하면, 복수의 하부 전극(52)이 배치된 제1 수지층(51)과 금속 지지체(60) 사이에 접합층(70)을 배치한 후, 가압할 수 있다. 이에 따라, 금속 지지체(60) 상에 접합층(70)이 배치되고, 접합층(70) 상에 제1 수지층(51) 및 복수의 하부 전극(52)이 배치된 구조를 얻을 수 있다. Referring to FIGS. 1A and 1B, the bonding layer 70 is disposed between the first resin layer 51 and the metal support 60 on which the plurality of lower electrodes 52 are disposed, and then pressurized. can do. As a result, a structure in which the bonding layer 70 is disposed on the metal support 60 and the first resin layer 51 and the plurality of lower electrodes 52 are disposed on the bonding layer 70 can be obtained.

한편, 제1 수지층(51)과 금속 지지체(60) 간 열팽창 계수 차이로 인하여, 잦은 온도 변화 시 제1 수지층(51)과 금속 지지체(60) 사이가 박리될 가능성이 있다. 특히, 도 1(a)에 도시된 방법과 같이, 복수의 하부 전극(52)이 배치된 제1 수지층(51)과 금속 지지체(60) 사이에 접합층(70)을 배치한 후 가압할 경우, 제1 수지층(51) 전체에 압력이 고르게 가해지지 않을 가능성이 있으며, 이에 따라 접합 강도가 약한 부분이 생길 수 있다. On the other hand, due to the difference in the coefficient of thermal expansion between the first resin layer 51 and the metal support 60, there is a possibility that the separation between the first resin layer 51 and the metal support 60 during frequent temperature changes. In particular, as shown in FIG. 1A, the bonding layer 70 is disposed between the first resin layer 51 and the metal support 60 on which the plurality of lower electrodes 52 are disposed, and then pressurized. In this case, there is a possibility that pressure is not evenly applied to the first resin layer 51 as a whole, and thus a portion where the bonding strength is weak may occur.

예를 들어, 제1 수지층(51)과 하부 전극(52) 간 높이 차이는 약 0.3mm이므로, 제1 수지층(51) 중 하부 전극(52)이 배치되지 않은 영역(A)에 가해지는 압력은 하부 전극(52)이 배치된 영역에 가해지는 압력보다 낮을 수 있다. 이에 따라, 하부 전극(52)이 배치되지 않은 제1 수지층(51)의 가장자리에는 충분한 압력이 가해지지 않을 수 있으며, 제1 수지층(51)의 가장자리가 금속 지지체(60)로부터 박리될 가능성이 높다.For example, since the height difference between the first resin layer 51 and the lower electrode 52 is about 0.3 mm, it is applied to the region A in which the lower electrode 52 is not disposed in the first resin layer 51. The pressure may be lower than the pressure applied to the region where the lower electrode 52 is disposed. Accordingly, sufficient pressure may not be applied to the edge of the first resin layer 51 in which the lower electrode 52 is not disposed, and the edge of the first resin layer 51 may be peeled off from the metal support 60. This is high.

본 발명이 이루고자 하는 기술적 과제는 열전소자의 기판 및 전극 구조를 제공하는 것이다.The technical problem to be achieved by the present invention is to provide a substrate and electrode structure of the thermoelectric element.

본 발명의 한 실시예에 따른 열전장치는 제1 금속 지지체, 상기 제1 금속 지지체 상에 배치된 제1 접합층, 상기 제1 접합층 상에 배치된 제1 수지층, 상기 제1 수지층 상에 배치된 복수의 제1 전극, 상기 복수의 제1 전극 상에 배치된 복수의 P형 열전 레그 및 복수의 N형 열전 레그, 상기 복수의 P형 열전 레그 및 복수의 N형 열전 레그 상에 배치된 복수의 제2 전극, 상기 복수의 제2 전극 상에 배치된 제2 수지층, 상기 제2 수지층 상에 배치된 제2 접합층, 그리고 상기 제2 접합층 상에 배치된 제2 금속 지지체를 포함하고, 상기 제1 수지층 상에 배치된 적어도 하나의 더미 전극을 더 포함하며, 상기 적어도 하나의 더미 전극은 상기 복수의 제1 전극의 최외곽 행 및 최외곽 열 중 적어도 하나의 측면에 배치된다.A thermoelectric device according to an embodiment of the present invention includes a first metal support, a first bonding layer disposed on the first metal support, a first resin layer disposed on the first bonding layer, and a first resin layer on the first metal support. A plurality of first electrodes arranged on the substrate, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, the plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs A plurality of second electrodes, a second resin layer disposed on the plurality of second electrodes, a second bonding layer disposed on the second resin layer, and a second metal support disposed on the second bonding layer And at least one dummy electrode disposed on the first resin layer, wherein the at least one dummy electrode is disposed on at least one side of an outermost row and an outermost column of the plurality of first electrodes. Is placed.

상기 적어도 하나의 더미 전극은 소정 간격으로 이격된 복수의 더미 전극을 포함할 수 있다. The at least one dummy electrode may include a plurality of dummy electrodes spaced at predetermined intervals.

상기 제1 수지층의 면적은 상기 제2 수지층의 면적보다 클 수 있다. An area of the first resin layer may be larger than an area of the second resin layer.

상기 복수의 제1 전극은 상기 복수의 제1 전극의 한 모서리에 배치되는 제1 단자 연결 전극 및 상기 제1 단자 연결 전극과 동일한 행 또는 동일한 열의 다른 모서리에 배치되는 제2 단자 연결 전극을 포함하고, 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열로부터 상기 제1 수지층의 가장자리 방향으로 연장되며, 상기 복수의 더미 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극 사이에 배치될 수 있다.The plurality of first electrodes includes a first terminal connection electrode disposed at one corner of the plurality of first electrodes and a second terminal connection electrode disposed at another corner of the same row or the same column as the first terminal connection electrode. And the first terminal connection electrode and the second terminal connection electrode extend in an edge direction of the first resin layer from a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed. The dummy electrode may be disposed between the first terminal connection electrode and the second terminal connection electrode.

상기 복수의 더미 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열의 측면을 따라 배치될 수 있다.The plurality of dummy electrodes may be disposed along side surfaces of a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed.

상기 제1 단자 연결 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열과 평행하고 상기 제2 단자 연결 전극을 향하는 방향으로 더 연장되고, 상기 제2 단자 연결 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열과 평행하고 상기 제1 단자 연결 전극을 향하는 방향으로 더 연장될 수 있다.The first terminal connection electrode is further extended in a direction parallel to the row or column where the first terminal connection electrode and the second terminal connection electrode are disposed and toward the second terminal connection electrode, and the second terminal connection electrode is the The first terminal connection electrode and the second terminal connection electrode may be further extended in a direction parallel to the row or column in which the first terminal connection electrode is disposed.

상기 적어도 하나의 더미 전극은 상기 복수의 제1 전극과 동일한 소재로 이루어질 수 있다.The at least one dummy electrode may be made of the same material as the plurality of first electrodes.

상기 적어도 하나의 더미 전극은 상기 복수의 제1 전극과 동일한 두께를 가질 수 있다.The at least one dummy electrode may have the same thickness as the plurality of first electrodes.

상기 제1 수지층은 에폭시 수지, 그리고 무기충전재를 포함하며, 상기 무기충전재는 산화알루미늄, 질화붕소, 및 질화알루미늄 중 적어도 하나를 포함할 수 있다.The first resin layer may include an epoxy resin and an inorganic filler, and the inorganic filler may include at least one of aluminum oxide, boron nitride, and aluminum nitride.

본 발명의 실시예에 따르면, 열전도도가 우수하고, 신뢰성이 높은 열전소자를 얻을 수 있다. 특히, 본 발명의 실시예에 따른 열전소자는 금속 지지체와의 접합 강도가 높고, 와이어 연결이 용이하다. According to the embodiment of the present invention, it is possible to obtain a thermoelectric element having excellent thermal conductivity and high reliability. In particular, the thermoelectric device according to the embodiment of the present invention has a high bonding strength with the metal support and facilitates wire connection.

도 1(a)는 열전장치의 하부 기판 측을 제조하는 공정을 나타내고, 도 1(b)는 열전장치의 하부 기판 측의 단면도이다.Fig. 1 (a) shows a step of manufacturing the lower substrate side of the thermoelectric device, and Fig. 1 (b) is a sectional view of the lower substrate side of the thermoelectric device.

도 2는 열전소자의 단면도이고, 도 3은 열전소자의 사시도이다.2 is a sectional view of a thermoelectric element, and FIG. 3 is a perspective view of the thermoelectric element.

도 4는 본 발명의 한 실시예에 따른 열전장치의 단면도이다. 4 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention.

도 5는 본 발명의 한 실시예에 따른 열전장치에 포함되는 수지층 및 전극 구조의 상면도이다. 5 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to an exemplary embodiment of the present invention.

도 6은 본 발명의 다른 실시예에 따른 열전장치에 포함되는 수지층 및 전극 구조의 상면도이다. 6 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to another exemplary embodiment of the present invention.

도 7은 본 발명의 또 다른 실시예에 따른 열전장치에 포함되는 수지층 및 전극 구조의 상면도이다.7 is a top view of a resin layer and an electrode structure included in a thermoelectric device according to still another embodiment of the present invention.

도 8은 실시예에 따라 제작된 열전소자의 수지층 접합강도를 실험한 예이다.8 is an example of experiments on the resin layer bonding strength of the thermoelectric device manufactured according to the embodiment.

도 9는 비교예에 따라 제작된 열전소자의 수지층 접합강도를 실험한 예이다.9 is an example in which the resin layer bonding strength of the thermoelectric device manufactured according to the comparative example was tested.

도 10는 본 발명의 실시예에 따른 열전 소자가 정수기에 적용된 예시도이다.10 is an exemplary diagram in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.

도 11은 본 발명의 실시예에 따른 열전 소자가 냉장고에 적용된 예시도이다.11 is an exemplary view in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator.

본 발명은 다양한 변경을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated and described in the drawings. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

제2, 제1 등과 같이 서수를 포함하는 용어는 다양한 구성요소들을 설명하는데 사용될 수 있지만, 상기 구성요소들은 상기 용어들에 의해 한정되지는 않는다. 상기 용어들은 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다. 예를 들어, 본 발명의 권리 범위를 벗어나지 않으면서 제2 구성요소는 제1 구성요소로 명명될 수 있고, 유사하게 제1 구성요소도 제2 구성요소로 명명될 수 있다. 및/또는 이라는 용어는 복수의 관련된 기재된 항목들의 조합 또는 복수의 관련된 기재된 항목들 중의 어느 항목을 포함한다. Terms including ordinal numbers, such as second and first, may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component. The term and / or includes a combination of a plurality of related items or any item of a plurality of related items.

어떤 구성요소가 다른 구성요소에 "연결되어" 있다거나 "접속되어" 있다고 언급된 때에는, 그 다른 구성요소에 직접적으로 연결되어 있거나 또는 접속되어 있을 수도 있지만, 중간에 다른 구성요소가 존재할 수도 있다고 이해되어야 할 것이다. 반면에, 어떤 구성요소가 다른 구성요소에 "직접 연결되어" 있다거나 "직접 접속되어" 있다고 언급된 때에는, 중간에 다른 구성요소가 존재하지 않는 것으로 이해되어야 할 것이다. When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when a component is said to be "directly connected" or "directly connected" to another component, it should be understood that there is no other component in between.

본 출원에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

다르게 정의되지 않는 한, 기술적이거나 과학적인 용어를 포함해서 여기서 사용되는 모든 용어들은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가지고 있다. 일반적으로 사용되는 사전에 정의되어 있는 것과 같은 용어들은 관련 기술의 문맥 상 가지는 의미와 일치하는 의미를 가지는 것으로 해석되어야 하며, 본 출원에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

이하, 첨부된 도면을 참조하여 실시예를 상세히 설명하되, 도면 부호에 관계없이 동일하거나 대응하는 구성 요소는 동일한 참조 번호를 부여하고 이에 대한 중복되는 설명은 생략하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings, and the same or corresponding components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted.

도 2는 열전소자의 단면도이고, 도 3은 열전소자의 사시도이다.2 is a sectional view of a thermoelectric element, and FIG. 3 is a perspective view of the thermoelectric element.

도 2 내지 3을 참조하면, 열전소자(100)는 하부기판(110), 하부전극(120), P형 열전 레그(130), N형 열전 레그(140), 상부전극(150) 및 상부기판(160)을 포함한다.2 to 3, the thermoelectric element 100 includes a lower substrate 110, a lower electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, an upper electrode 150, and an upper substrate. 160.

하부전극(120)은 하부기판(110)과 P형 열전 레그(130) 및 N형 열전 레그(140)의 하면 사이에 배치되고, 상부전극(150)은 상부기판(160)과 P형 열전 레그(130) 및 N형 열전 레그(140)의 상면 사이에 배치된다. 이에 따라, 복수의 P형 열전 레그(130) 및 복수의 N형 열전 레그(140)는 하부전극(120) 및 상부전극(150)에 의하여 전기적으로 연결된다. 하부전극(120)과 상부전극(150) 사이에 배치되며, 전기적으로 연결되는 한 쌍의 P형 열전 레그(130) 및 N형 열전 레그(140)는 단위 셀을 형성할 수 있다. The lower electrode 120 is disposed between the lower substrate 110, the lower surface of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper electrode 150 is the upper substrate 160 and the P-type thermoelectric leg. Disposed between the top surface of the 130 and the N-type thermoelectric leg 140. Accordingly, the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 are electrically connected by the lower electrode 120 and the upper electrode 150. A pair of P-type thermoelectric legs 130 and N-type thermoelectric legs 140 disposed between the lower electrode 120 and the upper electrode 150 and electrically connected to each other may form a unit cell.

예를 들어, 리드선(181, 182)을 통하여 하부전극(120) 및 상부전극(150)에 전압을 인가하면, 펠티에 효과로 인하여 P형 열전 레그(130)로부터 N형 열전 레그(140)로 전류가 흐르는 기판은 열을 흡수하여 냉각부로 작용하고, N형 열전 레그(140)로부터 P형 열전 레그(130)로 전류가 흐르는 기판은 가열되어 발열부로 작용할 수 있다.For example, when a voltage is applied to the lower electrode 120 and the upper electrode 150 through the lead wires 181 and 182, a current is transmitted from the P-type thermoelectric leg 130 to the N-type thermoelectric leg 140 due to the Peltier effect. The flowing substrate absorbs heat to act as a cooling unit, and the substrate flowing current from the N-type thermoelectric leg 140 to the P-type thermoelectric leg 130 may be heated to act as a heat generating unit.

또는, 하부전극(120) 및 상부전극(150) 간 온도 차를 가해주면, 제벡 효과로 인하여 P형 열전 레그(130) 및 N형 열전 레그(140) 내 전하가 이동하며, 전기가 발생할 수도 있다. Alternatively, when the temperature difference between the lower electrode 120 and the upper electrode 150 is applied, charges in the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may move due to the Seebeck effect, and electricity may be generated. .

여기서, P형 열전 레그(130) 및 N형 열전 레그(140)는 비스무스(Bi) 및 텔루륨(Te)를 주원료로 포함하는 비스무스텔루라이드(Bi-Te)계 열전 레그일 수 있다. P형 열전 레그(130)는 전체 중량 100wt%에 대하여 안티몬(Sb), 니켈(Ni), 알루미늄(Al), 구리(Cu), 은(Ag), 납(Pb), 붕소(B), 갈륨(Ga), 텔루륨(Te), 비스무스(Bi) 및 인듐(In) 중 적어도 하나를 포함하는 비스무스텔루라이드(Bi-Te)계 주원료 물질 99 내지 99.999wt%와 Bi 또는 Te를 포함하는 혼합물 0.001 내지 1wt%를 포함하는 열전 레그일 수 있다. 예를 들어, 주원료물질이 Bi-Se-Te이고, Bi 또는 Te를 전체 중량의 0.001 내지 1wt%로 더 포함할 수 있다. N형 열전 레그(140)는 전체 중량 100wt%에 대하여 셀레늄(Se), 니켈(Ni), 알루미늄(Al), 구리(Cu), 은(Ag), 납(Pb), 붕소(B), 갈륨(Ga), 텔루륨(Te), 비스무스(Bi) 및 인듐(In) 중 적어도 하나를 포함하는 비스무스텔루라이드(Bi-Te)계 주원료 물질 99 내지 99.999wt%와 Bi 또는 Te를 포함하는 혼합물 0.001 내지 1wt%를 포함하는 열전 레그일 수 있다. 예를 들어, 주원료물질이 Bi-Sb-Te이고, Bi 또는 Te를 전체 중량의 0.001 내지 1wt%로 더 포함할 수 있다.The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be bismuth fluoride (Bi-Te) -based thermoelectric legs including bismuth (Bi) and tellurium (Te) as main materials. P-type thermoelectric leg 130 is antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt% A mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%. For example, the main raw material is Bi-Se-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight. N-type thermoelectric leg 140 is selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium relative to the total weight 100wt% A mixture comprising 99 to 99.999 wt% of bismustelulide (Bi-Te) -based main raw material including at least one of (Ga), tellurium (Te), bismuth (Bi) and indium (In) and Bi or Te 0.001 It may be a thermoelectric leg including to 1wt%. For example, the main raw material is Bi-Sb-Te, and may further include Bi or Te as 0.001 to 1wt% of the total weight.

P형 열전 레그(130) 및 N형 열전 레그(140)는 벌크형 또는 적층형으로 형성될 수 있다. 일반적으로 벌크형 P형 열전 레그(130) 또는 벌크형 N형 열전 레그(140)는 열전 소재를 열처리하여 잉곳(ingot)을 제조하고, 잉곳을 분쇄하고 체거름하여 열전 레그용 분말을 획득한 후, 이를 소결하고, 소결체를 커팅하는 과정을 통하여 얻어질 수 있다. 적층형 P형 열전 레그(130) 또는 적층형 N형 열전 레그(140)는 시트 형상의 기재 상에 열전 소재를 포함하는 페이스트를 도포하여 단위 부재를 형성한 후, 단위 부재를 적층하고 커팅하는 과정을 통하여 얻어질 수 있다.The P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may be formed in a bulk type or a stacked type. In general, the bulk P-type thermoelectric leg 130 or the bulk N-type thermoelectric leg 140 is heat-treated thermoelectric material to produce an ingot (ingot), crushed and ingot to obtain a powder for thermoelectric leg, then Sintering, and can be obtained through the process of cutting the sintered body. The stacked P-type thermoelectric leg 130 or the stacked N-type thermoelectric leg 140 is formed by applying a paste including a thermoelectric material on a sheet-shaped substrate to form a unit member, and then stacking and cutting the unit members. Can be obtained.

이때, 한 쌍의 P형 열전 레그(130) 및 N형 열전 레그(140)는 동일한 형상 및 체적을 가지거나, 서로 다른 형상 및 체적을 가질 수 있다. 예를 들어, P형 열전 레그(130)와 N형 열전 레그(140)의 전기 전도 특성이 상이하므로, N형 열전 레그(140)의 높이 또는 단면적을 P형 열전 레그(130)의 높이 또는 단면적과 다르게 형성할 수도 있다. In this case, the pair of P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 may have the same shape and volume, or may have different shapes and volumes. For example, since the electrical conduction characteristics of the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140 are different, the height or the cross-sectional area of the N-type thermoelectric leg 140 is the height or the cross-sectional area of the P-type thermoelectric leg 130. It can also be formed differently.

본 발명의 한 실시예에 따른 열전소자의 성능은 열전성능 지수로 나타낼 수 있다. 열전성능 지수(ZT)는 수학식 1과 같이 나타낼 수 있다. The performance of a thermoelectric device according to an embodiment of the present invention may be represented by a thermoelectric performance index. The thermoelectric performance index (ZT) can be expressed as in Equation 1.

Figure PCTKR2019001276-appb-M000001
Figure PCTKR2019001276-appb-M000001

여기서, α는 제벡계수[V/K]이고, σ는 전기 전도도[S/m]이며, α2σ는 파워 인자(Power Factor, [W/mK2])이다. 그리고, T는 온도이고, k는 열전도도[W/mK]이다. k는 a·cp·ρ로 나타낼 수 있으며, a는 열확산도[cm2/S]이고, cp 는 비열[J/gK]이며, ρ는 밀도[g/cm3]이다.Where α is the Seebeck coefficient [V / K], sigma is the electrical conductivity [S / m], and α 2 sigma is the Power Factor [W / mK 2 ]. And T is the temperature and k is the thermal conductivity [W / mK]. k can be represented by a · c p · ρ, a is thermal diffusivity [cm 2 / S], c p is specific heat [J / gK], and ρ is density [g / cm 3 ].

열전소자의 열전성능 지수를 얻기 위하여, Z미터를 이용하여 Z 값(V/K)을 측정하며, 측정한 Z값을 이용하여 열전성능 지수(ZT)를 계산할 수 있다. In order to obtain a thermoelectric performance index of the thermoelectric device, the Z value (V / K) may be measured using a Z meter, and the thermoelectric performance index (ZT) may be calculated using the measured Z value.

여기서, 하부기판(110)과 P형 열전 레그(130) 및 N형 열전 레그(140) 사이에 배치되는 하부전극(120), 그리고 상부기판(160)과 P형 열전 레그(130) 및 N형 열전 레그(140) 사이에 배치되는 상부전극(150)은 구리(Cu), 은(Ag) 및 니켈(Ni) 중 적어도 하나를 포함할 수 있다. Here, the lower electrode 120 disposed between the lower substrate 110 and the P-type thermoelectric leg 130 and the N-type thermoelectric leg 140, and the upper substrate 160 and the P-type thermoelectric leg 130 and the N-type The upper electrode 150 disposed between the thermoelectric legs 140 may include at least one of copper (Cu), silver (Ag), and nickel (Ni).

그리고, 하부기판(110)과 상부기판(160)의 크기는 다르게 형성될 수도 있다. 예를 들어, 하부기판(110)과 상부기판(160) 중 하나의 체적, 두께 또는 면적은 다른 하나의 체적, 두께 또는 면적보다 크게 형성될 수 있다. 이에 따라, 열전소자의 흡열 성능 또는 방열 성능을 높일 수 있다. 바람직하게는, 하부기판(110)의 체적, 두께 또는 면적은 상부기판(160)의 체적, 두께 또는 면적 중 적어도 하나 보다 더 크게 형성될 수 있다. 이때, 하부기판(110)은 제벡 효과를 위해 고온영역에 배치되는 경우, 펠티에 효과를 위해 발열영역으로 적용되는 경우 또는 후술할 열전모듈의 외부환경으로부터 보호를 위한 실링부재가 하부기판(110) 상에 배치되는 경우에 상부기판(160) 보다 체적, 두께 또는 면적 중 적어도 하나를 더 크게 할 수 있다. 이때, 하부기판(110)의 면적은 상부기판(160)의 면적대비 1.2 내지 5배의 범위로 형성할 수 있다. 하부기판(110)의 면적이 상부기판(160)에 비해 1.2배 미만으로 형성되는 경우, 열전달 효율 향상에 미치는 영향은 높지 않으며, 5배를 초과하는 경우에는 오히려 열전달 효율이 현저하게 떨어지며, 열전모듈의 기본 형상을 유지하기 어려울 수 있다. In addition, the sizes of the lower substrate 110 and the upper substrate 160 may be formed differently. For example, the volume, thickness, or area of one of the lower substrate 110 and the upper substrate 160 may be larger than the volume, thickness, or area of the other. Accordingly, the heat absorbing performance or heat dissipation performance of the thermoelectric element can be improved. Preferably, the volume, thickness or area of the lower substrate 110 may be greater than at least one of the volume, thickness or area of the upper substrate 160. In this case, when the lower substrate 110 is disposed in the high temperature region for the Seebeck effect, the heating member is applied to the heating region for the Peltier effect or the sealing member for protection from the external environment of the thermoelectric module to be described later is provided on the lower substrate 110. When disposed in the upper substrate 160 may be larger than at least one of the volume, thickness or area. In this case, an area of the lower substrate 110 may be formed in a range of 1.2 to 5 times the area of the upper substrate 160. When the area of the lower substrate 110 is less than 1.2 times that of the upper substrate 160, the effect on improving the heat transfer efficiency is not high, and when the excess exceeds 5 times, the heat transfer efficiency is significantly lowered, and the thermoelectric module Maintaining its basic shape can be difficult.

또한, 하부기판(110)과 상부기판(160) 중 적어도 하나의 표면에는 방열 패턴, 예를 들어 요철 패턴이 형성될 수도 있다. 이에 따라, 열전소자의 방열 성능을 높일 수 있다. 요철 패턴이 P형 열전 레그(130) 또는 N형 열전 레그(140)와 접촉하는 면에 형성되는 경우, 열전 레그와 기판 간의 접합 특성도 향상될 수 있다. In addition, a heat radiation pattern, for example, an uneven pattern may be formed on at least one surface of the lower substrate 110 and the upper substrate 160. As a result, the heat dissipation performance of the thermoelectric element can be improved. When the uneven pattern is formed on the surface in contact with the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140, the bonding characteristics between the thermoelectric leg and the substrate can also be improved.

이때, P형 열전 레그(130) 또는 N형 열전 레그(140)는 원통 형상, 다각 기둥 형상, 타원형 기둥 형상 등을 가질 수 있다. In this case, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a cylindrical shape, a polygonal pillar shape, an elliptical pillar shape and the like.

또는, P형 열전 레그(130) 또는 N형 열전 레그(140)는 적층형 구조를 가질 수도 있다. 예를 들어, P형 열전 레그 또는 N형 열전 레그는 시트 형상의 기재에 반도체 물질이 도포된 복수의 구조물을 적층한 후, 이를 절단하는 방법으로 형성될 수 있다. 이에 따라, 재료의 손실을 막고 전기 전도 특성을 향상시킬 수 있다.Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may have a stacked structure. For example, the P-type thermoelectric leg or the N-type thermoelectric leg may be formed by stacking a plurality of structures coated with a semiconductor material on a sheet-shaped substrate and then cutting them. As a result, it is possible to prevent loss of material and to improve electrical conduction characteristics.

또는, P형 열전 레그(130) 또는 N형 열전 레그(140)는 존 멜팅(zone melting) 방식 또는 분말 소결 방식에 따라 제작될 수 있다. 존 멜팅 방식에 따르면, 열전 소재를 이용하여 잉곳(ingot)을 제조한 후, 잉곳에 천천히 열을 가하여 단일의 방향으로 입자가 재배열되도록 리파이닝하고, 천천히 냉각시키는 방법으로 열전 레그를 얻는다. 분말 소결 방식에 따르면, 열전 소재를 이용하여 잉곳을 제조한 후, 잉곳을 분쇄하고 체거름하여 열전 레그용 분말을 획득하고, 이를 소결하는 과정을 통하여 열전 레그를 얻는다.Alternatively, the P-type thermoelectric leg 130 or the N-type thermoelectric leg 140 may be manufactured according to a zone melting method or a powder sintering method. According to the zone melting method, an ingot is manufactured by using a thermoelectric material, and then, by slowly applying heat to the ingot, the particles are rearranged so as to be rearranged in a single direction, and the thermoelectric leg is slowly cooled. According to the powder sintering method, after manufacturing an ingot using a thermoelectric material, the ingot is pulverized and sieved to obtain a thermoelectric leg powder, and the thermoelectric leg is obtained through the sintering process.

도시되지 않았으나, 하부기판(110)과 상부기판(160) 사이에는 실링부재가 더 배치될 수도 있다. 실링부재는 하부기판(110)과 상부기판(160) 사이에서 하부전극(120), P형 열전 레그(130), N형 열전 레그(140) 및 상부전극(150)의 측면에 배치될 수 있다. 이에 따라, 하부전극(120), P형 열전 레그(130), N형 열전 레그(140) 및 상부전극(150)은 외부의 습기, 열, 오염 등으로부터 실링될 수 있다. Although not shown, a sealing member may be further disposed between the lower substrate 110 and the upper substrate 160. The sealing member may be disposed on side surfaces of the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 between the lower substrate 110 and the upper substrate 160. . Accordingly, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and the upper electrode 150 may be sealed from external moisture, heat, and contamination.

여기서, 실링부재는, 복수의 하부전극(120)의 최외곽, 복수의 P형 열전 레그(130) 및 복수의 N형 열전 레그(140)의 최외곽 및 복수의 상부전극(150)의 최외곽의 측면으로부터 소정 거리 이격되어 배치되는 실링 케이스, 실링 케이스와 하부 기판(110) 사이에 배치되는 실링재 및 실링 케이스와 상부 기판(160) 사이에 배치되는 실링재를 포함할 수 있다. 이와 같이, 실링 케이스는 실링재를 매개로 하여 하부 기판(110) 및 상부 기판(160)과 접촉할 수 있다. 이에 따라, 실링 케이스가 하부 기판(110) 및 상부 기판(160)과 직접 접촉할 경우 실링 케이스를 통해 열전도가 일어나게 되고, 결과적으로 하부 기판(110)과 상부 기판(160) 간의 온도 차가 낮아지는 문제를 방지할 수 있다. Here, the sealing member is the outermost of the plurality of lower electrodes 120, the outermost of the plurality of P-type thermoelectric legs 130 and the plurality of N-type thermoelectric legs 140 and the outermost of the plurality of upper electrodes 150. The sealing case may be spaced apart from a side surface of the sealing case, and may include a sealing material disposed between the sealing case and the lower substrate 110 and a sealing material disposed between the sealing case and the upper substrate 160. As such, the sealing case may contact the lower substrate 110 and the upper substrate 160 through the sealing material. Accordingly, when the sealing case is in direct contact with the lower substrate 110 and the upper substrate 160, heat conduction occurs through the sealing case, and as a result, a temperature difference between the lower substrate 110 and the upper substrate 160 is lowered. Can be prevented.

여기서, 실링재는 에폭시 수지 및 실리콘 수지 중 적어도 하나를 포함하거나, 에폭시 수지 및 실리콘 수지 중 적어도 하나가 양면에 도포된 테이프를 포함할 수 있다. 실링재는 실링 케이스와 하부 기판(110) 사이 및 실링 케이스와 상부 기판(160) 사이를 기밀하는 역할을 하며, 하부전극(120), P형 열전 레그(130), N형 열전 레그(140) 및 상부전극(150)의 실링 효과를 높일 수 있고, 마감재, 마감층, 방수재, 방수층 등과 혼용될 수 있다. Here, the sealing material may include at least one of an epoxy resin and a silicone resin, or at least one of an epoxy resin and a silicone resin may include a tape coated on both surfaces. The sealing material serves to hermetically seal between the sealing case and the lower substrate 110 and between the sealing case and the upper substrate 160, and the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, and The sealing effect of the upper electrode 150 may be increased and may be mixed with a finish, a finish layer, a waterproof material, a waterproof layer, and the like.

여기서, 실링 케이스와 하부 기판(110) 사이를 실링하는 실링재는 하부 기판(110)의 상면에 배치되고, 실링케이스와 상부 기판(160) 사이를 실링하는 실링재는 상부기판(160)의 측면에 배치될 수 있다. 이를 위하여, 하부 기판(110)의 면적은 상부 기판(160)의 면적보다 클 수 있다. Here, the sealing material sealing between the sealing case and the lower substrate 110 is disposed on the upper surface of the lower substrate 110, the sealing material sealing between the sealing case and the upper substrate 160 is disposed on the side of the upper substrate 160. Can be. To this end, the area of the lower substrate 110 may be larger than the area of the upper substrate 160.

한편, 실링 케이스에는 전극에 연결된 리드선(180, 182)를 인출하기 위한 가이드 홈이 형성될 수 있다. 이를 위하여, 실링 케이스는 플라스틱 등으로 이루어진 사출 성형물일 수 있으며, 실링 커버와 혼용될 수 있다. In the sealing case, guide grooves for drawing lead wires 180 and 182 connected to the electrodes may be formed. To this end, the sealing case may be an injection molding made of plastic or the like, and may be mixed with the sealing cover.

다만, 실링부재에 관한 이상의 설명은 예시에 지나지 않으며, 실링부재는 다양한 형태로 변형될 수 있다.However, the above description of the sealing member is only an example, and the sealing member may be modified in various forms.

도시되지 않았으나, 실링부재를 둘러싸도록 단열재가 더 포함될 수도 있다. 또는 실링부재는 단열 성분을 포함할 수도 있다.Although not shown, a heat insulating material may be further included to surround the sealing member. Alternatively, the sealing member may include a heat insulating component.

본 발명의 실시예에 따르면, 기판과 금속 지지체 간의 접합 시 기판에 가해지는 압력을 고르게 하여 기판과 금속 지지체 간의 접합 강도를 높이고자 한다.According to an embodiment of the present invention, the pressure applied to the substrate during the bonding between the substrate and the metal support is evened to increase the bonding strength between the substrate and the metal support.

도 4는 본 발명의 한 실시예에 따른 열전장치의 단면도이고, 도 5는 본 발명의 한 실시예에 따른 열전장치에 포함되는 수지층 및 전극 구조의 상면도이며, 도 6은 본 발명의 다른 실시예에 따른 열전장치에 포함되는 수지층 및 전극 구조의 상면도이고, 도 7은 본 발명의 또 다른 실시예에 따른 열전장치에 포함되는 수지층 및 전극 구조의 상면도이다. 4 is a cross-sectional view of a thermoelectric device according to an embodiment of the present invention, FIG. 5 is a top view of a resin layer and an electrode structure included in the thermoelectric device according to an embodiment of the present invention, and FIG. 6 is another view of the present invention. Top view of the resin layer and electrode structure included in the thermoelectric device according to the embodiment, Figure 7 is a top view of the resin layer and electrode structure included in the thermoelectric device according to another embodiment of the present invention.

도 4를 참조하면, 열전장치(400)은 제1 금속 지지체(410), 제1 금속 지지체(410) 상에 배치된 제1 접합층(420), 제1 접합층(420) 상에 배치된 제1 수지층(430), 제1 수지층(430) 상에 배치된 복수의 제1 전극(440), 복수의 제1 전극(440) 상에 배치된 복수의 P형 열전 레그(450) 및 복수의 N형 열전 레그(455), 복수의 P형 열전 레그(450) 및 복수의 N형 열전 레그(455) 상에 배치된 복수의 제2 전극(460), 복수의 제2 전극(460) 상에 배치된 제2 수지층(470), 제2 수지층(470) 상에 배치된 제2 접합층(480) 및 제2 접합층(480) 상에 배치된 제2 금속 지지체(490)를 포함한다. 여기서, 제1 수지층(430), 제1 전극(440), P형 열전 레그(450), N형 열전 레그(455), 제2 전극(460) 및 제2 수지층(470)은 각각 도 2 내지 3에서 설명한 하부기판(110), 하부전극(120), P형 열전 레그(130), N형 열전 레그(140), 상부전극(150) 및 상부기판(160)에 대응할 수 있다. 도시되지 않았으나, 제1 금속 지지체(410) 및 제2 금속 지지체(490) 중 적어도 하나에는 히트싱크가 배치될 수도 있다. 예를 들어, 제1 금속 지지체(410)의 양면 중 접합층(420)이 배치되는 면의 반대 면에는 히트싱크가 부착될 수 있고, 제2 금속 지지체(490)의 양면 중 접합층(480)이 배치되는 면의 반대 면에는 히트싱크가 부착될 수 있다. 또는, 제1 금속 지지체(410)와 히트싱크는 일체로 형성될 수도 있고, 제2 금속 지지체(490)와 히트싱크는 일체로 형성될 수도 있다. Referring to FIG. 4, the thermoelectric device 400 is disposed on the first metal support 410, the first bonding layer 420 disposed on the first metal support 410, and the first bonding layer 420. The first resin layer 430, the plurality of first electrodes 440 disposed on the first resin layer 430, the plurality of P-type thermoelectric legs 450 disposed on the plurality of first electrodes 440, and A plurality of second electrodes 460 and a plurality of second electrodes 460 disposed on the plurality of N-type thermoelectric legs 455, the plurality of P-type thermoelectric legs 450, and the plurality of N-type thermoelectric legs 455. The second resin layer 470 disposed on the second resin layer 470, the second bonding layer 480 disposed on the second resin layer 470, and the second metal support 490 disposed on the second bonding layer 480. Include. Here, the first resin layer 430, the first electrode 440, the P-type thermoelectric leg 450, the N-type thermoelectric leg 455, the second electrode 460, and the second resin layer 470 are respectively illustrated. The lower substrate 110, the lower electrode 120, the P-type thermoelectric leg 130, the N-type thermoelectric leg 140, the upper electrode 150, and the upper substrate 160 described in FIGS. Although not shown, a heat sink may be disposed on at least one of the first metal support 410 and the second metal support 490. For example, a heat sink may be attached to a surface opposite to a surface on which the bonding layer 420 is disposed on both surfaces of the first metal support 410, and the bonding layer 480 among the both surfaces of the second metal support 490. The heat sink may be attached to the surface opposite to the surface on which the arrangement is made. Alternatively, the first metal support 410 and the heat sink may be integrally formed, and the second metal support 490 and the heat sink may be integrally formed.

본 명세서에서, 열전소자는 제1 금속 지지체(410), 제1 수지층(430), 제1 전극(440), P형 열전 레그(450), N형 열전 레그(455), 제2 전극(460), 제2 수지층(470) 및 제2 금속 지지체(490)를 포함하는 것을 의미할 수도 있다.In the present specification, the thermoelectric element may include a first metal support 410, a first resin layer 430, a first electrode 440, a P-type thermoelectric leg 450, an N-type thermoelectric leg 455, and a second electrode ( 460, the second resin layer 470, and the second metal support 490 may be included.

또는, 열전소자는 히트싱크가 부착되거나 히트싱크와 일체로 형성된 제1 금속 지지체(410), 제1 수지층(430), 제1 전극(440), P형 열전 레그(450), N형 열전 레그(455), 제2 전극(460), 제2 수지층(470) 및 히트싱크가 부착되거나 히트싱크와 일체로 형성된 제2 금속 지지체(490)를 포함하는 것을 의미할 수도 있다.Alternatively, the thermoelectric element may include a first metal support 410, a first resin layer 430, a first electrode 440, a P-type thermoelectric leg 450, and an N-type thermoelectric to which a heat sink is attached or integrally formed with the heat sink. The leg 455, the second electrode 460, the second resin layer 470, and the heat sink may be attached to or include a second metal support 490 formed integrally with the heat sink.

제1 금속 지지체(410) 및 제2 금속 지지체(490)는 알루미늄, 알루미늄 합금, 구리, 구리 합금 등으로 이루어질 수 있다. 제1 금속 지지체(410) 및 제2 금속 지지체(490)는 제1 수지층(430), 복수의 제1 전극(440), 복수의 P형 열전 레그(450) 및 복수의 N형 열전 레그(455), 복수의 제2 전극(460), 제2 수지층(470) 등을 지지할 수 있다. 이를 위하여, 제1 금속 지지체(410)의 면적은 제1 수지층(430)의 면적보다 클 수 있으며, 제2 금속 지지체(490)의 면적은 제2 수지층(470)의 면적보다 클 수 있다. 즉, 제1 수지층(430)은 제1 금속 지지체(410)의 가장자리로부터 소정 거리만큼 이격된 영역 내에 배치될 수 있고, 제2 수지층(470)은 제2 금속 지지체(470)의 가장자리로부터 소정 거리만큼 이격된 영역 내에 배치될 수 있다. 도시되지 않았으나, 제1 금속 지지체(410)의 양면 중 제1 수지층(430)이 배치되는 면의 반대 면에는 히트싱크가 형성될 수도 있다. 이와 마찬가지로, 제2 금속 지지체(490)의 양면 중 제2 수지층(470)이 배치되는 면의 반대 면에는 히트싱크가 형성될 수도 있다. 또한, 도시되지 않았으나, 제1 금속 지지체(410)와 제2 금속 지지체(490)은 각각 히트싱크와 일체로 형성될 수 있다.The first metal support 410 and the second metal support 490 may be made of aluminum, an aluminum alloy, copper, a copper alloy, or the like. The first metal support 410 and the second metal support 490 may include a first resin layer 430, a plurality of first electrodes 440, a plurality of P-type thermoelectric legs 450, and a plurality of N-type thermoelectric legs ( 455, the plurality of second electrodes 460, the second resin layer 470, and the like. To this end, an area of the first metal support 410 may be larger than an area of the first resin layer 430, and an area of the second metal support 490 may be larger than an area of the second resin layer 470. . That is, the first resin layer 430 may be disposed in an area spaced apart from the edge of the first metal support 410 by a predetermined distance, and the second resin layer 470 may be disposed from the edge of the second metal support 470. It may be disposed in an area spaced by a predetermined distance. Although not shown, a heat sink may be formed on a surface opposite to a surface on which the first resin layer 430 is disposed on both surfaces of the first metal support 410. Similarly, a heat sink may be formed on a surface opposite to a surface on which the second resin layer 470 is disposed on both surfaces of the second metal support 490. In addition, although not shown, each of the first metal support 410 and the second metal support 490 may be integrally formed with the heat sink.

제1 수지층(430) 및 제2 수지층(470)은 수지 및 무기충전재를 포함하는 수지 조성물로 이루어질 수 있다. 제1 수지층(430) 및 제2 수지층(470)의 두께는 0.01 내지 0.65mm, 바람직하게는 0.01 내지 0.6mm, 더욱 바람직하게는 0.01 내지 0.55mm일 수 있으며, 열전도도는 10W/mK이상, 바람직하게는 20W/mK이상, 더욱 바람직하게는 30W/mK 이상일 수 있다. The first resin layer 430 and the second resin layer 470 may be formed of a resin composition including a resin and an inorganic filler. The first resin layer 430 and the second resin layer 470 may have a thickness of 0.01 to 0.65 mm, preferably 0.01 to 0.6 mm, more preferably 0.01 to 0.55 mm, and a thermal conductivity of 10 W / mK or more. , Preferably 20W / mK or more, more preferably 30W / mK or more.

여기서, 수지는 에폭시 수지 또는 실리콘 수지를 포함할 수 있다. 실리콘 수지는, 예를 들어 PDMS(polydimethylsiloxane)을 포함할 수 있다. Here, the resin may include an epoxy resin or a silicone resin. The silicone resin may include, for example, polydimethylsiloxane (PDMS).

에폭시 수지는 에폭시 화합물 및 경화제를 포함할 수 있다. 이때, 에폭시 화합물 10 부피비에 대하여 경화제 1 내지 10 부피비로 포함될 수 있다. 여기서, 에폭시 화합물은 결정성 에폭시 화합물, 비결정성 에폭시 화합물 및 실리콘 에폭시 화합물 중 적어도 하나를 포함할 수 있다. 결정성 에폭시 화합물은 메조겐(mesogen) 구조를 포함할 수 있다. 메조겐(mesogen)은 액정(liquid crystal)의 기본 단위이며, 강성(rigid) 구조를 포함한다. 그리고, 비결정성 에폭시 화합물은 분자 중 에폭시기를 2개 이상 가지는 통상의 비결정성 에폭시 화합물일 수 있으며, 예를 들면 비스페놀 A 또는 비스페놀 F로부터 유도되는 글리시딜에테르화물일 수 있다. 여기서, 경화제는 아민계 경화제, 페놀계 경화제, 산무수물계 경화제, 폴리메르캅탄계 경화제, 폴리아미노아미드계 경화제, 이소시아네이트계 경화제 및 블록 이소시아네이트계 경화제 중 적어도 하나를 포함할 수 있으며, 2 종류 이상의 경화제를 혼합하여 사용할 수도 있다.The epoxy resin may comprise an epoxy compound and a curing agent. At this time, it may be included in 1 to 10 volume ratio of the curing agent with respect to 10 volume ratio of the epoxy compound. Here, the epoxy compound may include at least one of a crystalline epoxy compound, an amorphous epoxy compound and a silicon epoxy compound. The crystalline epoxy compound may comprise a mesogen structure. Mesogen is a basic unit of liquid crystal and includes a rigid structure. The amorphous epoxy compound may be a conventional amorphous epoxy compound having two or more epoxy groups in a molecule, and may be, for example, glycidyl etherate derived from bisphenol A or bisphenol F. Herein, the curing agent may include at least one of an amine curing agent, a phenol curing agent, an acid anhydride curing agent, a polycapcaptan curing agent, a polyaminoamide curing agent, an isocyanate curing agent, and a block isocyanate curing agent, and two or more kinds of curing agents. It can also be mixed and used.

무기충전재는 산화알루미늄 및 복수의 판상의 질화붕소가 뭉쳐진 질화붕소 응집체를 포함할 수도 있다. 무기충전재는 질화알루미늄을 더 포함할 수도 있다. 여기서, 질화붕소 응집체의 표면은 수지와의 친화도를 높이기 위하여 표면이 개질될 수도 있다. 예를 들어, 질화붕소 응집체의 표면은 수지와 친화도가 높은 작용기를 가지는 고분자 물질로 코팅되거나, 질화붕소 응집체 내 공극의 적어도 일부는 수지와 친화도가 높은 작용기를 가지는 고분자 물질에 의하여 충전될 수 있다. The inorganic filler may include an aluminum oxide and a plurality of plate-like boron nitride agglomerates. The inorganic filler may further include aluminum nitride. Here, the surface of the boron nitride agglomerate may be modified to increase the affinity with the resin. For example, the surface of the boron nitride agglomerate may be coated with a polymer material having a high affinity for the resin, or at least a part of the pores in the boron nitride agglomerate may be filled with a polymer material having a high affinity for the resin. have.

제1 접합층(420) 및 제2 접합층(480)은 TIM(Thermal Interface Material)일 수 있다. 또는, 제1 접합층(420) 및 제2 접합층(480)은 제1 수지층(430) 및 제2 수지층(470)을 이루는 수지 조성물과 동일한 수지 조성물일 수도 있다. 즉, 제1 수지층(430) 및 제2 수지층(470)을 이루는 수지 조성물과 동일한 수지 조성물을 미경화 상태로 제1 금속 지지체(410) 및 제2 금속 지지체(490) 상에 도포한 후, 경화된 상태의 제1 수지층(430) 및 제2 수지층(470)을 적층하고, 고온에서 가압하는 방식으로 제1 수지층(430) 및 제2 수지층(470)과 제1 금속 지지체(410) 및 제2 금속 지지체(490)를 접합할 수 있다. The first bonding layer 420 and the second bonding layer 480 may be a thermal interface material (TIM). Alternatively, the first bonding layer 420 and the second bonding layer 480 may be the same resin composition as the resin composition forming the first resin layer 430 and the second resin layer 470. That is, the same resin composition as the resin composition constituting the first resin layer 430 and the second resin layer 470 is applied on the first metal support 410 and the second metal support 490 in an uncured state. The first resin layer 430 and the second resin layer 470 are laminated in a cured state, and the first resin layer 430 and the second resin layer 470 and the first metal support are formed by pressing at a high temperature. 410 and the second metal support 490 may be bonded.

한편, 복수의 제1 전극(440) 및 복수의 제2 전극(460)은 제1 수지층(430) 및 제2 수지층(470)을 이루는 반경화 상태의 수지 조성물 상에 Cu 기판을 배치하여 압착한 후, Cu 기판을 전극 형상으로 에칭하는 방법으로 제작될 수 있다. 또는, 제1 수지층(430) 및 제2 수지층(470)을 이루는 경화 상태의 수지 조성물 상에 미리 정렬된 복수의 제1 전극(440) 및 복수의 제2 전극(460)을 배치한 후, 압착하는 방법으로 제작될 수도 있다.Meanwhile, the plurality of first electrodes 440 and the plurality of second electrodes 460 may be disposed on a semi-cured resin composition of the first resin layer 430 and the second resin layer 470. After pressing, the Cu substrate may be manufactured by etching the Cu substrate into an electrode shape. Alternatively, after arranging the plurality of first electrodes 440 and the plurality of second electrodes 460 that are previously aligned on the resin composition in the cured state of the first resin layer 430 and the second resin layer 470. It may also be manufactured by pressing.

또는, 제1 접합층(420) 및 제2 접합층(480)이 생략될 수도 있다. 예를 들어, 제1 금속 지지체(410) 및 제2 금속 지지체(490) 상에 제1 수지층(430) 및 제2 수지층(470)을 이루는 수지 조성물을 미경화 상태로 도포한 후, 반경화시킨 상태에서 Cu 기판 또는 미리 정렬된 전극을 배치한 후 가압할 수도 있다.Alternatively, the first bonding layer 420 and the second bonding layer 480 may be omitted. For example, after applying the resin composition constituting the first resin layer 430 and the second resin layer 470 on the first metal support 410 and the second metal support 490 in an uncured state, the radius It may be pressurized after arranging a Cu substrate or a pre-aligned electrode in a state of being converted.

각 제1 전극(440) 상에는 한 쌍의 P형 열전 레그(450) 및 N형 열전 레그(455)가 배치될 수 있으며, 각 제2 전극(460) 상에는 각 제1 전극(440) 상에 배치된 한 쌍의 P형 열전 레그(450) 및 N형 열전 레그(455) 중 하나가 겹쳐지도록 한 쌍의 N형 열전 레그(455) 및 P형 열전 레그(450)가 배치될 수 있다.A pair of P-type thermoelectric legs 450 and N-type thermoelectric legs 455 may be disposed on each first electrode 440, and may be disposed on each first electrode 440 on each second electrode 460. A pair of N-type thermoelectric legs 455 and P-type thermoelectric legs 450 may be disposed such that one of the pair of P-type thermoelectric legs 450 and the N-type thermoelectric legs 455 overlap.

도 5를 참조하면, 제1 수지층(430) 상에는 적어도 하나의 더미 전극(500)이 더 배치될 수도 있다. 적어도 하나의 더미 전극(500)은 복수의 제1 전극(440)의 최외곽 행 및 최외곽 열 중 적어도 하나의 측면에 배치될 수 있다. Referring to FIG. 5, at least one dummy electrode 500 may be further disposed on the first resin layer 430. The at least one dummy electrode 500 may be disposed on at least one side of the outermost row and the outermost column of the plurality of first electrodes 440.

더미 전극(500)은 복수의 제1 전극(440)과 동일한 소재 및 동일한 두께를 가지나, 더미 전극(500) 상에는 열전 레그가 배치되지 않으며, 전기적으로 연결되지 않을 수 있다. 그리고, 더미 전극(500)은 복수의 제1 전극(440)과 이격되도록 배치될 수 있다. 이때, 복수의 더미 전극(500)은 소정 간격으로 서로 이격되어 배치될 수 있다. 더미 전극(500)은 제1 전극(440)과 동일한 형상을 가질 수도 있고, 상이한 형상을 가질 수도 있다. 여기서 더미 전극(500)과 복수의 제 1 전극(440)의 두께가 동일하다는 것은 복수의 제 1 전극(440)의 개별 두께 대비 60% 내지 140% 이며, 바람직하게는 75% 내지 125%이며, 더욱 바람직하게는 90% 내지 110%일 수 있음을 의미한다. 60%보다 작고 140%보다 클 경우 압력이 고르게 분포되지 않을 가능성이 있으며, 60%보다 작을 경우 더미 전극(500)이 배치된 위치의 접합 강도가 약한 부분이 생길 수 있고 140%보다 클 경우 복수의 제 1 전극(440)의 최외곽 행 및 최외곽 열이 배치된 위치의 접합 강도가 약한 부분이 생길 수 있다.The dummy electrode 500 has the same material and the same thickness as the plurality of first electrodes 440, but thermoelectric legs are not disposed on the dummy electrode 500 and may not be electrically connected to the dummy electrode 500. The dummy electrode 500 may be disposed to be spaced apart from the plurality of first electrodes 440. In this case, the plurality of dummy electrodes 500 may be spaced apart from each other at predetermined intervals. The dummy electrode 500 may have the same shape as the first electrode 440 or may have a different shape. Here, the thicknesses of the dummy electrode 500 and the plurality of first electrodes 440 are equal to 60% to 140%, preferably 75% to 125% of the individual thicknesses of the plurality of first electrodes 440. More preferably, it may be 90% to 110%. If less than 60% and greater than 140%, there is a possibility that the pressure is not evenly distributed. If less than 60%, there may be a weak portion of the bonding strength at the position where the dummy electrode 500 is disposed. A portion where the bonding strength is weak at the position where the outermost row and outermost column of the first electrode 440 are disposed may be generated.

이와 같이, 더미 전극(500)이 복수의 제1 전극(440)의 최외곽 행 및 최외곽 열 중 적어도 하나의 측면에 배치될 경우, 제1 수지층(430)과 금속 지지체(410) 간의 접합 과정에서 더미 전극(500)이 배치된 영역에도 복수의 제1 전극(440)이 배치된 영역과 마찬가지로 고르게 압력이 가해지므로, 제1 수지층(430)의 가장자리 영역과 금속 지지체(410) 가 높은 접합 강도로 접합될 수 있다.As such, when the dummy electrode 500 is disposed on at least one side of the outermost row and the outermost column of the plurality of first electrodes 440, the bonding between the first resin layer 430 and the metal support 410 is performed. In the process, since the pressure is applied evenly to the region where the dummy electrode 500 is disposed, similarly to the region where the plurality of first electrodes 440 are disposed, the edge region of the first resin layer 430 and the metal support 410 are high. It can be bonded with bond strength.

한편, 도 6 내지 7과 같이, 복수의 제1 전극(440)은 제1 단자가 연결되기 위한 제1 단자 연결 전극(442) 및 제1 단자와 극성이 상이한 제2 단자가 연결되기 위한 제2 단자 연결 전극(444)을 포함할 수 있다. 예를 들어, 제1 단자 연결 전극(442)은 복수의 제1 전극(440)의 한 모서리에 배치되고, 제2 단자 연결 전극(444)은 제1 단자 연결 전극(442)과 동일한 행 또는 동일한 열의 다른 모서리에 배치될 수 있다. 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 각각에는 P형 열전 레그 및 N 형 열전 레그 중 하나가 배치될 수 있다. 6 to 7, the plurality of first electrodes 440 may include a first terminal connection electrode 442 for connecting the first terminal and a second terminal for connecting a second terminal having a different polarity from the first terminal. The terminal connection electrode 444 may be included. For example, the first terminal connection electrode 442 is disposed at one corner of the plurality of first electrodes 440, and the second terminal connection electrode 444 is the same row or the same as the first terminal connection electrode 442. It can be placed at the other edge of the column. One of the P-type thermoelectric leg and the N-type thermoelectric leg may be disposed in each of the first terminal connection electrode 442 and the second terminal connection electrode 444.

제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 각각에는 와이어를 통하여 제1 단자 및 제2 단자가 연결될 수 있다. 와이어의 연결을 용이하게 하기 위하여, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)은 다른 제1 전극(440)들에 비하여 크게 형성될 수 있다. 예를 들어, 도 6에 도시된 바와 같이, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)은 각각 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)이 배치된 행 또는 열로부터 제1 수지층(430)의 가장자리 방향으로 연장될 수 있다. 예를 들어, 도 7에 도시된 바와 같이, 제1 단자 연결 전극(442)은 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)이 배치된 행 또는 열과 평행하고 제2 단자 연결 전극(444)을 향하는 방향으로 더 연장되고, 제2 단자 연결 전극(444)은 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)이 배치된 행 또는 열과 평행하고 제1 단자 연결 전극(442)을 향하는 방향으로 더 연장될 수도 있다. 즉, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 각각은 "ㄴ"자 형상을 가질 수 있다. The first terminal and the second terminal may be connected to each of the first terminal connection electrode 442 and the second terminal connection electrode 444 through a wire. In order to facilitate the connection of the wires, the first terminal connection electrode 442 and the second terminal connection electrode 444 may be formed larger than the other first electrodes 440. For example, as shown in FIG. 6, the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed with the first terminal connection electrode 442 and the second terminal connection electrode 444, respectively. It may extend in the edge direction of the first resin layer 430 from the row or column. For example, as shown in FIG. 7, the first terminal connection electrode 442 is parallel to the row or column in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed, and the second terminal connection is performed. Extending further in the direction toward the electrode 444, the second terminal connection electrode 444 is parallel to the row or column in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed, and the first terminal connection; It may further extend in the direction toward the electrode 442. That is, each of the first terminal connection electrode 442 and the second terminal connection electrode 444 may have a “b” shape.

이때, 복수의 더미 전극(500)은 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 사이에서 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)이 배치된 행 또는 열의 측면을 따라 배치될 수 있다. In this case, the plurality of dummy electrodes 500 includes a row in which the first terminal connection electrode 442 and the second terminal connection electrode 444 are disposed between the first terminal connection electrode 442 and the second terminal connection electrode 444. Or along the side of the column.

이와 같이, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 사이에 더미 전극, 즉 복수의 더미 전극(500)을 배치하면, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)을 크게 형성하더라도, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 사이의 영역에 가해지는 압력을 다른 제1 전극(440)들이 배치된 영역에 가해지는 압력과 동일한 수준으로 유지할 수 있다. 이에 따라, 제1 수지층(430)과 제1 금속 지지체(410) 간의 접합 강도를 전체적으로 높게 유지하는 것이 가능하다.  As such, when the dummy electrode, that is, the plurality of dummy electrodes 500 is disposed between the first terminal connection electrode 442 and the second terminal connection electrode 444, the first terminal connection electrode 442 and the second terminal connection are disposed. Although the electrode 444 is formed large, the pressure applied to the region between the first terminal connection electrode 442 and the second terminal connection electrode 444 is equal to the pressure applied to the region where the other first electrodes 440 are disposed. You can keep it at the same level. Thereby, it is possible to maintain the high bond strength between the first resin layer 430 and the first metal support 410 as a whole.

복수의 제1 전극(440)이 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)을 포함하는 경우, 제1 수지층(430)의 면적은 제2 수지층(470)의 면적보다 크게 형성될 수 있다. 이에 따라, 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444)의 크기를 다른 제1 전극(440)들의 크기보다 크게 형성하여 와이어 연결을 용이하게 할 수 있으며, 더미 전극, 즉 복수의 더미 전극(500)을 배치하기 위한 영역을 확보할 수 있다. When the plurality of first electrodes 440 includes the first terminal connection electrode 442 and the second terminal connection electrode 444, the area of the first resin layer 430 is the area of the second resin layer 470. It can be made larger. Accordingly, the size of the first terminal connection electrode 442 and the second terminal connection electrode 444 may be larger than that of the other first electrodes 440 to facilitate wire connection. The area for arranging the dummy electrode 500 can be secured.

도 6 내지 7에서는 제1 단자 연결 전극(442) 및 제2 단자 연결 전극(444) 사이에만 더미 전극인 복수의 더미 전극(500)이 배치된 것을 예로 들고 있으나, 이로 제한되는 것은 아니며, 도 5에 도시된 바와 같이 복수의 제1 전극(440)의 최외곽 행 또는 최외곽 열의 측면에 복수의 더미 전극(500)이 더 배치될 수도 있다. 6 to 7 illustrate that a plurality of dummy electrodes 500 that are dummy electrodes are disposed only between the first terminal connection electrode 442 and the second terminal connection electrode 444, but the present invention is not limited thereto. As shown in FIG. 2, the plurality of dummy electrodes 500 may be further disposed on the side of the outermost row or outermost column of the plurality of first electrodes 440.

또한, 도 5 내지 7에서는 제1 수지층(430)과 제1 금속지지체(410) 간의 접합을 위한 더미 전극(500)이 배치된 것을 예로 들고 있으나, 이로 제한되는 것은 아니며, 제2 수지층(470)과 제2 금속 지지체(490) 간의 접합을 위한 더미 전극(미도시)을 제2 수지층에도 형성할 수도 있다.5 to 7 illustrate that the dummy electrode 500 for bonding between the first resin layer 430 and the first metal support 410 is disposed as an example, but is not limited thereto, and the second resin layer ( A dummy electrode (not shown) for bonding between the 470 and the second metal support 490 may also be formed in the second resin layer.

도 8은 실시예에 따라 제작된 열전소자의 수지층 접합강도를 실험한 예이고, 도 9는 비교예에 따라 제작된 열전소자의 수지층 접합강도를 실험한 예이다. 8 is an example of experimenting the resin layer bonding strength of the thermoelectric element manufactured according to the embodiment, Figure 9 is an example of experimenting the resin layer bonding strength of the thermoelectric element produced according to the comparative example.

도 8(a)에 도시된 바와 같이, 실시예에서는 도 7의 구조로 복수의 전극 및 복수의 더미 전극을 수지층에 배치하였고, 도 9(a)에 도시된 바와 같이, 비교예에서는 도 7의 구조에서 복수의 더미 전극을 제외하고 복수의 전극만을 수지층에 배치하였다. As shown in FIG. 8 (a), in the embodiment, a plurality of electrodes and a plurality of dummy electrodes are disposed in the resin layer in the structure of FIG. 7, and as shown in FIG. 9 (a), in the comparative example, FIG. 7. Only a plurality of electrodes were disposed in the resin layer except for the plurality of dummy electrodes in the structure of.

도 8(b)를 참조하면, 수지층과 금속 지지체 사이를 실시예에 따라 접합한 배면은 수지층의 가장자리, 특히 제1 단자 연결 전극(442)과 제2 단자 연결 전극(444) 사이의 영역(800)에서도 들뜸이나 박리 현상이 발생되지 않고 높은 접합 강도를 유지함을 알 수 있다. Referring to FIG. 8 (b), the rear surface of the resin layer and the metal support bonded to each other according to the embodiment is an area of the edge of the resin layer, in particular, between the first terminal connection electrode 442 and the second terminal connection electrode 444. It can be seen that even at (800), no lifting or peeling occurs and high bonding strength is maintained.

이에 반해, 도 9(b)를 참조하면, 수지층과 금속 지지체 사이를 비교예에 따라 접합한 배면은 수지층의 가장자리, 특히 제1 단자 연결 전극(442)과 제2 단자 연결 전극(444) 사이의 영역(900)이 쉽게 박리되었음을 알 수 있다. In contrast, referring to FIG. 9 (b), the rear surface of the resin layer and the metal support bonded to each other according to the comparative example is formed at the edge of the resin layer, in particular, the first terminal connection electrode 442 and the second terminal connection electrode 444. It can be seen that the region 900 between them is easily peeled off.

이하에서는 도 10를 참조하여, 본 발명의 실시예에 따른 열전 소자가 정수기에 적용된 예를 설명한다.Hereinafter, an example in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a water purifier will be described with reference to FIG. 10.

도 10는 본 발명의 실시예에 따른 열전 소자가 정수기에 적용된 예시도이다.10 is an exemplary diagram in which a thermoelectric element according to an embodiment of the present invention is applied to a water purifier.

본 발명의 실시예에 따른 열전 소자가 적용된 정수기(1)는 원수 공급관(12a), 정수 탱크 유입관(12b), 정수탱크(12), 필터 어셈블리(13), 냉각 팬(14), 축열조(15), 냉수 공급관(15a), 및 열전장치(1000)을 포함한다.The water purifier 1 to which the thermoelectric element is applied according to an embodiment of the present invention includes a raw water supply pipe 12a, a water purification tank inlet pipe 12b, a water purification tank 12, a filter assembly 13, a cooling fan 14, and a heat storage tank ( 15), a cold water supply pipe 15a, and a thermoelectric device 1000.

원수 공급관(12a)은 수원으로부터 정수 대상인 물을 필터 어셈블리(13)로 유입시키는 공급관이고, 정수 탱크 유입관(12b)은 필터 어셈블리(13)에서 정수된 물을 정수 탱크(12)로 유입시키는 유입관이고, 냉수 공급관(15a)은 정수 탱크(12)에서 열전장치(1000)에 의해 소정 온도로 냉각된 냉수가 최종적으로 사용자에게 공급되는 공급관이다.The raw water supply pipe 12a is a supply pipe for introducing purified water from the water source into the filter assembly 13, and the purified water tank inflow pipe 12b is an inflow for introducing purified water from the filter assembly 13 into the purified water tank 12. The cold water supply pipe 15a is a supply pipe through which the cold water cooled to the predetermined temperature by the thermoelectric device 1000 in the purified water tank 12 is finally supplied to the user.

정수 탱크(12)는 필터 어셈블리(13)를 경유하며 정수되고 정수 탱크 유입관(12b)을 통해 유입된 물을 저장 및 외부로 공급하도록 정수된 물을 잠시 수용한다.The purified water tank 12 temporarily receives the purified water through the filter assembly 13 to store and supply the purified water introduced through the purified water tank inlet 12b to the outside.

필터 어셈블리(13)는 침전 필터(13a)와, 프리 카본 필터(13b)와, 멤브레인 필터(13c)와, 포스트 카본 필터(13d)로 구성된다.The filter assembly 13 is composed of a precipitation filter 13a, a pre carbon filter 13b, a membrane filter 13c, and a post carbon filter 13d.

즉, 원수 공급관(12a)으로 유입되는 물은 필터 어셈블리(13)를 경유하며 정수될 수 있다.That is, the water flowing into the raw water supply pipe 12a may be purified through the filter assembly 13.

축열조(15)가 정수 탱크(12)와, 열전장치(1000)의 사이에 배치되어, 열전장치(1000)에서 형성된 냉기가 저장된다. 축열조(15)에 저장된 냉기는 정수 탱크(12)로 인가되어, 정수 탱크(120)에 수용된 물을 냉각시킨다.The heat storage tank 15 is disposed between the purified water tank 12 and the thermoelectric device 1000 to store cold air formed in the thermoelectric device 1000. The cold air stored in the heat storage tank 15 is applied to the purified water tank 12 to cool the water contained in the purified water tank 120.

냉기 전달이 원활하게 이루어질 수 있도록, 축열조(15)는 정수 탱크(12)와 면접촉될 수 있다.The heat storage tank 15 may be in surface contact with the purified water tank 12 so that the cold air may be smoothly transferred.

열전장치(1000)은 상술한 바와 같이, 흡열면과 발열면을 구비하며, P 형 반도체 및 N형 반도체 상의 전자 이동에 의해, 일측은 냉각되고, 타측은 가열된다.As described above, the thermoelectric device 1000 includes a heat absorbing surface and a heat generating surface, and one side is cooled and the other side is heated by electron movement on the P-type semiconductor and the N-type semiconductor.

여기서, 일측은 정수 탱크(12) 측이며, 타측은 정수 탱크(12)의 반대측일 수 있다.Here, one side may be the purified water tank 12 side, the other side may be the opposite side of the purified water tank 12.

또한, 상술한 바와 같이 열전장치(1000)은 방수 및 방진 성능이 우수하며, 열 유동 성능이 개선되어, 정수기 내에서 정수 탱크(12)를 효율적으로 냉각할 수 있다.In addition, as described above, the thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the purified water tank 12 in the water purifier.

이하에서는 도 11을 참조하여, 본 발명의 실시예에 따른 열전 소자가 냉장고에 적용된 예를 설명한다.Hereinafter, an example in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator will be described with reference to FIG. 11.

도 11은 본 발명의 실시예에 따른 열전 소자가 냉장고에 적용된 예시도이다.11 is an exemplary view in which a thermoelectric element according to an exemplary embodiment of the present invention is applied to a refrigerator.

냉장고는 심온 증발실내에 심온 증발실 커버(23), 증발실 구획벽(24), 메인 증발기(25), 냉각팬(26) 및 열전장치(1000)을 포함한다.The refrigerator includes a deep evaporation chamber cover 23, an evaporation chamber partition wall 24, a main evaporator 25, a cooling fan 26, and a thermoelectric device 1000 in the deep evaporation chamber.

냉장고 내는 심온 증발실 커버(23)에 의하여 심온 저장실과 심온 증발실로 구획된다.The inside of the refrigerator is partitioned into a deep storage compartment and a deep evaporation chamber by a deep evaporation chamber cover 23.

상세히, 상기 심온 증발실 커버(23)의 전방에 해당하는 내부 공간이 심온 저장실로 정의되고, 심온 증발실 커버(23)의 후방에 해당하는 내부 공간이 심온 증발실로 정의될 수 있다.In detail, an inner space corresponding to the front of the deep evaporation chamber cover 23 may be defined as a deep storage chamber, and an inner space corresponding to the rear of the deep evaporation chamber cover 23 may be defined as a deep temperature evaporation chamber.

심온 증발실 커버(23)의 전면에는 토출 그릴(23a)과 흡입 그릴(23b) 이 각각 형성될 수 있다.Discharge grille 23a and suction grille 23b may be respectively formed on the front surface of the deep-temperature evaporation chamber cover 23.

증발실 구획벽(24)은 인너 캐비닛의 후벽으로부터 전방으로 이격되는 지점에 설치되어, 심온실 저장 시스템이 놓이는 공간과 메인 증발기(25)가 놓이는 공간을 구획한다.The evaporation compartment partition wall 24 is installed at a point spaced forward from the rear wall of the inner cabinet to partition the space in which the depth chamber storage system is placed and the space in which the main evaporator 25 is placed.

메인 증발기(25)에 의하여 냉각되는 냉기는 냉동실로 공급된 뒤 다시 메인 증발기 쪽으로 되돌아간다.The cold air cooled by the main evaporator 25 is supplied to the freezer compartment and then returned to the main evaporator again.

열전장치(1000)는 심온 증발실에 수용되며, 흡열면이 심온 저장실의 서랍 어셈블리 쪽을 향하고, 발열면이 증발기 쪽을 향하는 구조를 이룬다. 따라서, 열전장치(1000)에서 발생되는 흡열 현상을 이용하여 서랍 어셈블리에 저장된 음식물을 섭씨 영하 50도 이하의 초저온 상태로 신속하게 냉각시키는데 사용될 수 있다.The thermoelectric device 1000 is accommodated in the deep-temperature evaporation chamber, and the heat absorbing surface faces the drawer assembly side of the deep storage chamber, and the heat generating surface faces the evaporator side. Therefore, by using the endothermic phenomenon generated in the thermoelectric device 1000 can be used to quickly cool the food stored in the drawer assembly to an ultra-low temperature state of less than 50 degrees Celsius.

또한, 상술한 바와 같이 열전장치(1000)는 방수 및 방진 성능이 우수하며, 열 유동 성능이 개선되어, 냉장고 내에서 서랍 어셈블리를 효율적으로 냉각할 수 있다.In addition, as described above, the thermoelectric device 1000 may have excellent waterproof and dustproof performance, and thermal flow performance may be improved to efficiently cool the drawer assembly in the refrigerator.

본 발명의 실시예에 따른 열전소자는 발전용 장치, 냉각용 장치, 온열용 장치 등에 작용될 수 있다. 구체적으로는, 본 발명의 실시예에 따른 열전소자는 주로 광통신 모듈, 센서, 의료 기기, 측정 기기, 항공 우주 산업, 냉장고, 칠러(chiller), 자동차 통풍 시트, 컵 홀더, 세탁기, 건조기, 와인셀러, 정수기, 센서용 전원 공급 장치, 서모파일(thermopile) 등에 적용될 수 있다. The thermoelectric element according to the embodiment of the present invention may act on the apparatus for power generation, the apparatus for cooling, the apparatus for heating, and the like. Specifically, the thermoelectric device according to the embodiment of the present invention mainly includes an optical communication module, a sensor, a medical device, a measuring device, an aerospace industry, a refrigerator, a chiller, a car ventilation sheet, a cup holder, a washing machine, a dryer, and a wine cellar. It can be applied to water purifier, sensor power supply, thermopile and the like.

여기서, 본 발명의 실시예에 따른 열전소자가 의료 기기에 적용되는 예로, PCR(Polymerase Chain Reaction) 기기가 있다. PCR 기기는 DNA를 증폭하여 DNA의 염기 서열을 결정하기 위한 장비이며, 정밀한 온도 제어가 요구되고, 열 순환(thermal cycle)이 필요한 기기이다. 이를 위하여, 펠티어 기반의 열전소자가 적용될 수 있다. Here, an example in which the thermoelectric device according to an embodiment of the present invention is applied to a medical device includes a polymer chain reaction (PCR) device. PCR equipment is a device for amplifying DNA to determine the DNA sequence, precise temperature control is required, and a thermal cycle (thermal cycle) equipment is required. To this end, a Peltier-based thermoelectric device may be applied.

본 발명의 실시예에 따른 열전소자가 의료 기기에 적용되는 다른 예로, 광 검출기가 있다. 여기서, 광 검출기는 적외선/자외선 검출기, CCD(Charge Coupled Device) 센서, X-ray 검출기, TTRS(Thermoelectric Thermal Reference Source) 등이 있다. 광 검출기의 냉각(cooling)을 위하여 펠티어 기반의 열전소자가 적용될 수 있다. 이에 따라, 광 검출기 내부의 온도 상승으로 인한 파장 변화, 출력 저하 및 해상력 저하 등을 방지할 수 있다. Another example in which a thermoelectric device according to an exemplary embodiment of the present invention is applied to a medical device is a photo detector. Here, the photo detector includes an infrared / ultraviolet detector, a charge coupled device (CCD) sensor, an X-ray detector, a thermoelectric thermal reference source (TTRS), and the like. A Peltier-based thermoelectric device may be applied to cool the photo detector. As a result, it is possible to prevent a change in wavelength, a decrease in power, a decrease in resolution, etc. due to a temperature rise inside the photodetector.

본 발명의 실시예에 따른 열전소자가 의료 기기에 적용되는 또 다른 예로, 면역 분석(immunoassay) 분야, 인비트로 진단(In vitro Diagnostics) 분야, 온도 제어 및 냉각 시스템(general temperature control and cooling systems), 물리 치료 분야, 액상 칠러 시스템, 혈액/플라즈마 온도 제어 분야 등이 있다. 이에 따라, 정밀한 온도 제어가 가능하다. As another example in which a thermoelectric device according to an embodiment of the present invention is applied to a medical device, an immunoassay field, an in vitro diagnostic field, a general temperature control and cooling system, Physiotherapy, liquid chiller systems, blood / plasma temperature control. Thus, precise temperature control is possible.

본 발명의 실시예에 따른 열전소자가 의료 기기에 적용되는 또 다른 예로, 인공 심장이 있다. 이에 따라, 인공 심장으로 전원을 공급할 수 있다. Another example in which the thermoelectric device according to the embodiment of the present invention is applied to a medical device is an artificial heart. Thus, power can be supplied to the artificial heart.

본 발명의 실시예에 따른 열전소자가 항공 우주 산업에 적용되는 예로, 별 추적 시스템, 열 이미징 카메라, 적외선/자외선 검출기, CCD 센서, 허블 우주 망원경, TTRS 등이 있다. 이에 따라, 이미지 센서의 온도를 유지할 수 있다. Examples of the thermoelectric device according to an exemplary embodiment of the present invention applied to the aerospace industry include a star tracking system, a thermal imaging camera, an infrared / ultraviolet detector, a CCD sensor, a hubble space telescope, and a TTRS. Accordingly, the temperature of the image sensor can be maintained.

본 발명의 실시예에 따른 열전소자가 항공 우주 산업에 적용되는 다른 예로, 냉각 장치, 히터, 발전 장치 등이 있다. Another example in which the thermoelectric device according to the embodiment of the present invention is applied to the aerospace industry includes a cooling device, a heater, a power generation device, and the like.

이 외에도 본 발명의 실시예에 따른 열전소자는 기타 산업 분야에 발전, 냉각 및 온열을 위하여 적용될 수 있다.In addition, the thermoelectric device according to the embodiment of the present invention may be applied for power generation, cooling, and heating in other industrial fields.

상기에서는 본 발명의 바람직한 실시예를 참조하여 설명하였지만, 해당 기술 분야의 숙련된 당업자는 하기의 특허 청구의 범위에 기재된 본 발명의 사상 및 영역으로부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음을 이해할 수 있을 것이다.Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (9)

제1 금속 지지체, First metal support, 상기 제1 금속 지지체 상에 배치된 제1 접합층, A first bonding layer disposed on the first metal support, 상기 제1 접합층 상에 배치된 제1 수지층, A first resin layer disposed on the first bonding layer, 상기 제1 수지층 상에 배치된 복수의 제1 전극, A plurality of first electrodes disposed on the first resin layer, 상기 복수의 제1 전극 상에 배치된 복수의 P형 열전 레그 및 복수의 N형 열전 레그, A plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes, 상기 복수의 P형 열전 레그 및 복수의 N형 열전 레그 상에 배치된 복수의 제2 전극, A plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, 상기 복수의 제2 전극 상에 배치된 제2 수지층, A second resin layer disposed on the plurality of second electrodes, 상기 제2 수지층 상에 배치된 제2 접합층, 그리고A second bonding layer disposed on the second resin layer, and 상기 제2 접합층 상에 배치된 제2 금속 지지체를 포함하고, A second metal support disposed on the second bonding layer, 상기 제1 수지층 상에 배치된 적어도 하나의 더미 전극을 더 포함하며, Further comprising at least one dummy electrode disposed on the first resin layer, 상기 적어도 하나의 더미 전극은 상기 복수의 제1 전극의 최외곽 행 및 최외곽 열 중 적어도 하나의 측면에 배치된 열전장치.The at least one dummy electrode is disposed on at least one side of the outermost row and the outermost column of the plurality of first electrodes. 제1항에 있어서, The method of claim 1, 상기 적어도 하나의 더미 전극은 소정 간격으로 이격된 복수의 더미 전극을 포함하는 열전장치. The at least one dummy electrode includes a plurality of dummy electrodes spaced at predetermined intervals. 제2항에 있어서,The method of claim 2, 상기 제1 수지층의 면적은 상기 제2 수지층의 면적보다 큰 열전장치. The area of the said 1st resin layer is larger than the area of the said 2nd resin layer. 제3항에 있어서,The method of claim 3, 상기 복수의 제1 전극은 상기 복수의 제1 전극의 한 모서리에 배치되는 제1 단자 연결 전극 및 상기 제1 단자 연결 전극과 동일한 행 또는 동일한 열의 다른 모서리에 배치되는 제2 단자 연결 전극을 포함하고,The plurality of first electrodes includes a first terminal connection electrode disposed at one corner of the plurality of first electrodes and a second terminal connection electrode disposed at another corner of the same row or the same column as the first terminal connection electrode. , 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열로부터 상기 제1 수지층의 가장자리 방향으로 연장되며, The first terminal connection electrode and the second terminal connection electrode extend in an edge direction of the first resin layer from a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed. 상기 복수의 더미 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극 사이에 배치되는 열전장치. The plurality of dummy electrodes are disposed between the first terminal connection electrode and the second terminal connection electrode. 제4항에 있어서, The method of claim 4, wherein 상기 복수의 더미 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열의 측면을 따라 배치되는 열전장치. The plurality of dummy electrodes are disposed along side surfaces of a row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed. 제5항에 있어서, The method of claim 5, 상기 제1 단자 연결 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열과 평행하고 상기 제2 단자 연결 전극을 향하는 방향으로 더 연장되고,The first terminal connection electrode is further extended in a direction parallel to the row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed and facing the second terminal connection electrode, 상기 제2 단자 연결 전극은 상기 제1 단자 연결 전극 및 상기 제2 단자 연결 전극이 배치된 행 또는 열과 평행하고 상기 제1 단자 연결 전극을 향하는 방향으로 더 연장되는 열전장치. And the second terminal connection electrode further extends in a direction parallel to the row or column in which the first terminal connection electrode and the second terminal connection electrode are disposed and toward the first terminal connection electrode. 제1항에 있어서, The method of claim 1, 상기 적어도 하나의 더미 전극은 상기 복수의 제1 전극과 동일한 소재로 이루어진 열전장치. The at least one dummy electrode is made of the same material as the plurality of first electrodes. 제1항에 있어서, The method of claim 1, 상기 적어도 하나의 더미 전극은 상기 복수의 제1 전극과 동일한 두께를 가지는 열전장치. The at least one dummy electrode has the same thickness as the plurality of first electrodes. 제1항에 있어서, The method of claim 1, 상기 제1 수지층은 에폭시 수지, 그리고 무기충전재를 포함하며, The first resin layer comprises an epoxy resin, and an inorganic filler, 상기 무기충전재는 산화알루미늄, 질화붕소, 및 질화알루미늄 중 적어도 하나를 포함하는 열전장치.The inorganic filler is a thermoelectric device comprising at least one of aluminum oxide, boron nitride, and aluminum nitride.
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