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WO2019004620A1 - Tête de liaison et dispositif de liaison la comprenant - Google Patents

Tête de liaison et dispositif de liaison la comprenant Download PDF

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Publication number
WO2019004620A1
WO2019004620A1 PCT/KR2018/006275 KR2018006275W WO2019004620A1 WO 2019004620 A1 WO2019004620 A1 WO 2019004620A1 KR 2018006275 W KR2018006275 W KR 2018006275W WO 2019004620 A1 WO2019004620 A1 WO 2019004620A1
Authority
WO
WIPO (PCT)
Prior art keywords
block
plate
heating
vacuum
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2018/006275
Other languages
English (en)
Korean (ko)
Inventor
남성용
김민기
정인영
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mico Co Ltd
Original Assignee
Mico Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mico Co Ltd filed Critical Mico Co Ltd
Publication of WO2019004620A1 publication Critical patent/WO2019004620A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P72/0428—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H10P72/00—
    • H10P72/0431—
    • H10P72/70—
    • H10P72/76—
    • H10P72/7606—
    • H10P72/78—
    • H10W99/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors

Definitions

  • the present invention relates to a bonding head and a bonding apparatus having the bonding head, and more particularly, to a bonding head for bonding a chip onto a wafer and a bonding apparatus having the bonding head.
  • the stacked chip package is a semiconductor package in which chips are stacked on a package substrate, and can achieve high integration.
  • the stacked chip package is manufactured at a chip level or a wafer level.
  • bonding and bonding are performed by applying heat and pressure to chips, chips, wafers, wafers or chips and wafers.
  • the bonding apparatus is referred to as a bonding apparatus.
  • the bonding apparatus stacks chips on a wafer and thermally compresses the wafer and the chips with a bonding head.
  • the bonding head merely performs bonding work of bonding the stacked wafers and chips, a separate chip transfer means for stacking the chips on the wafer is required. Therefore, the structure of the bonding apparatus can be complicated.
  • the present invention provides a bonding head capable of bonding a chip and a wafer after the chip is transferred and stacked on a wafer.
  • the present invention provides a bonding apparatus having the bonding head.
  • a bonding head comprises a base block and a heating element provided on the base block for generating heat by a power source applied from the outside to heat the bumps of the chip,
  • a heating block having a first vacuum line and a second vacuum line extending to the first vacuum line and extending from the first vacuum line to the second vacuum line, And a cooling line extending to an upper surface of the base block inside the base block and providing a cooling fluid to the heating block to cool the bumps of the chip to form a solder,
  • the heating block is also provided with a cooling fluid of the cooling line as the adsorption plate to further cool the bumper of the chip And may have openings that partially expose the cooling lines.
  • the opening may expose 30% to 70% of the area of the cooling line.
  • the opening may be a groove extending from the inside to the side of the heating block.
  • the opening may be a through hole passing through the upper and lower portions of the heating block.
  • the bonding head is formed to be connected to the through hole at least one of the upper surface of the heating block and the lower surface of the attracting plate, and the cooling fluid supplied through the cooling line And a connection groove for discharging the heat to the outside through the space between the heating block and the adsorption plate.
  • the adsorption plate may be replaceable in accordance with damage of the adsorption plate or change of the chip size.
  • the base block includes a first block made of a metal material and a second block disposed on the first block, And a second block made of a ceramic material having lower thermal conductivity than the heating block.
  • the base block is provided between the first block and the second block, and is formed of a ceramic material to reduce the transfer of heat of the second block to the first block. And a third block that is formed by the second block.
  • the bonding head may further include a temperature sensor provided inside the heating block and sensing a temperature of the heating block.
  • a bonding apparatus includes: a chuck structure and a base block for supporting a wafer; a heating element provided on the base block for generating heat by an external power source to heat the bumps of the chip; A heating block having a first vacuum line and a second vacuum line extending to the top surface to provide a force to the heating block, and a second vacuum line fixed to the heating block by the vacuum force of the first vacuum line, A suction plate having a vacuum hole connected to the second vacuum line, and an upper surface extending to the upper surface of the base block in the base block, wherein the cooling block is provided with the heating block to cool the bumps of the chip to form a solder
  • the adsorption plate is arranged to be movable above the chuck structure so as to face downward, Wherein the heating block has an opening that partially exposes the cooling line so that the cooling fluid of the cooling line is also provided to the adsorption plate to further cool the bumper of the chip .
  • the chuck structure includes a heating element that generates heat by a power source applied from the outside, a third vacuum line extending to the upper surface to provide a vacuum force, A heating plate having a line and a heating plate disposed on the heating plate for supporting a wafer on an upper surface thereof and transferring heat generated in the heating plate to the wafer to heat the wafer, A fifth vacuum line connected to the third vacuum line, and a vacuum groove connected to the fourth vacuum line on the lower surface so as to be vacuum-absorbed on the heating plate, the vacuum groove defined by the upper surface of the heating plate, And a chuck plate having a base plate.
  • the upper surface of the heating plate and the lower surface of the chuck plate are provided with alignment pins, and the other surface is provided with the alignment pins, And a receiving groove for aligning the plate and the chuck plate may be provided.
  • the chuck structure includes a guide ring which is hooked on a groove formed along a top edge of the heating plate and guides the periphery of the heating plate, and a guide ring which covers the top edge of the chuck plate, And a clamp fixed to the guide ring for fixing the chuck plate to the heating plate.
  • the clamp may be placed in a groove formed along the top edge of the chuck plate such that the top surface of the clamp and the top surface of the chuck plate are at the same height.
  • the guide ring and the clamp may be made of a material having a lower thermal conductivity than the heating plate and the chuck plate .
  • the bonding head according to the present invention fixes the attracting plate using a vacuum force, so that the attracting plate can be easily replaced by providing or releasing the vacuum force. Therefore, when the adsorption plate is damaged or the size of a chip fixed to the adsorption plate is changed, the adsorption plate can be replaced by replacing only the adsorption plate without replacing the entire bonding head.
  • the bonding head heats the chip with the chip closely attached to the wafer to melt the bump, and then re-bonds the chip to the wafer.
  • the bonding head may be provided with a cooling fluid of the cooling line directly through the opening to the adsorption plate, by forming an opening in the heating block which partially exposes the cooling line extending to the upper surface of the base block. Therefore, the bumper of the chip can be cooled more quickly. Since the bonding head rapidly heats and cools the chip, it is possible to form solder of good quality and good shape between the wafer and the chip. Therefore, the wafer and the chip can be stably bonded.
  • the bonding head can quickly perform the heating and cooling of the chip, the efficiency of the process of bonding the chip to the wafer can be improved.
  • the chuck structure of the bonding apparatus according to the present invention can be firmly fixed on the heating plate by the vacuum force. Therefore, warping and bending of the chuck plate can be minimized, and a separate fastening member for fastening the heating plate and the chuck plate is unnecessary.
  • the chuck structure can release the vacuum force to separate and replace the heating plate and the chuck plate. Therefore, maintenance of the chuck structure can be performed quickly.
  • FIG. 1 is a cross-sectional view illustrating a bonding head according to an embodiment of the present invention.
  • Fig. 2 is a plan view for explaining the opening of the heating block in the bonding head shown in Fig. 1.
  • Fig. 2 is a plan view for explaining the opening of the heating block in the bonding head shown in Fig. 1.
  • FIG 3 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention.
  • FIG. 4 is a plan view for explaining the opening of the heating block shown in Fig.
  • FIG. 5 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention.
  • FIG. 6 is a schematic diagram illustrating a bonding apparatus according to an embodiment of the present invention.
  • FIG. 7 is a plan view for explaining the chuck structure shown in FIG.
  • FIG. 8 is a bottom view for explaining the chuck plate shown in Fig.
  • Fig. 9 is an enlarged cross-sectional view of the portion A shown in Fig. 6 enlarged.
  • a bonding head comprises a base block and a heating element provided on the base block for generating heat by a power source applied from the outside to heat the bumps of the chip,
  • a heating block having a first vacuum line and a second vacuum line extending to the first vacuum line and extending from the first vacuum line to the second vacuum line, And a cooling line extending to an upper surface of the base block inside the base block and providing a cooling fluid to the heating block to cool the bumps of the chip to form a solder,
  • the heating block is also provided with a cooling fluid of the cooling line as the adsorption plate to further cool the bumper of the chip And may have openings that partially expose the cooling lines.
  • first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
  • FIG. 1 is a cross-sectional view illustrating a bonding head according to an embodiment of the present invention
  • FIG. 2 is a plan view illustrating an opening of a heating block in the bonding head shown in FIG.
  • the bonding head 100 is for transferring the chip 10 to a wafer (not shown) and bonding the chip 10 to the wafer.
  • the bonding head 100 may be provided so as to be able to horizontally move, vertically move, rotate, reverse, etc. in order to transport the chip 10.
  • the base block 110 includes a first block 112 and a second block 114.
  • the first block 112 is made of a metal material.
  • An example of the metal material may be a stainless steel material.
  • the second block 114 is provided on the first block 112.
  • the second block 114 may be made of a ceramic material having lower thermal conductivity than the heating block 120.
  • An example of the ceramic material is aluminum oxide (Al2O3).
  • the thermal conductivity of the second block 114 is lower than the thermal conductivity of the heating block 120 so that the second block 114 reduces the transfer of heat generated in the heating block 120 to the first block 112 .
  • the base block 110 further includes a third block 116.
  • a third block 116 is provided between the first block 112 and the second block 114.
  • the third block 116 acts as a buffer block to reduce the transfer of the column of the second block 114 to the first block 112.
  • the third block 116 may be made of a ceramic material, and examples of the ceramic material include aluminum oxide.
  • the heating block 120 is provided on the base block 110, specifically on the second block 114.
  • the heating block 120 incorporates a heating element 122.
  • the heating element 122 may be made of a metal material.
  • the heating element 122 generates heat by a power source applied from the outside, and uses the heat to heat the chip 10 adsorbed on the adsorption plate 130.
  • the bumps of the chip 10 can be melted using the heat. For example, to dissolve the bumps in the chip 10, the heating element 122 may instantaneously heat the chip 10 to about 450 ° C.
  • the heating block 120 may be made of a ceramic material having excellent insulation and thermal conductivity.
  • the heating block 120 may be an aluminum nitride (AlN) material.
  • AlN aluminum nitride
  • the thermal conductivity may be about 170 W / m ⁇ k or more.
  • the chip 10 can be rapidly heated using the heat generated by the heat generating body 122.
  • the heating block 120 has a first vacuum line 124 and a second vacuum line 126 extending to the top surface to provide vacuum force.
  • the first vacuum line 124 and the second vacuum line 126 are not connected to each other, and the vacuum force is provided, respectively.
  • the first vacuum line 124 passes above and below the edge of the heating block 120
  • the second vacuum line 126 passes above and below the center of the heating block 120.
  • the first vacuum line 124 may be connected to the groove 125 formed on the upper surface of the heating block 120 to have a predetermined length.
  • the vacuum force provided through the first vacuum line 124 can act in a wider range.
  • the first vacuum line 124 and the second vacuum line 126 may extend to the base block 110.
  • the first vacuum line 124 and the second vacuum line 126 may be provided only in the heating block 120 without extending to the base block 110.
  • the attracting plate 130 is provided on the heating block 120.
  • the suction plate 130 is fixed to the upper surface of the heating block 120 by the vacuum force of the first vacuum line 124.
  • the suction plate 130 can be replaced by providing a vacuum force to the first vacuum line 124 or by releasing the vacuum force. Therefore, when the suction plate 130 is damaged or the size of the chip 10 is changed, only the suction plate 130 is selectively replaced, so that the suction plate 130 can be easily damaged or the size of the chip 10 can be easily changed.
  • the attracting plate 130 has a vacuum hole 132.
  • the vacuum hole 132 is connected to the second vacuum line 126 of the heating block 120. Therefore, the chip 10 to be placed on the attracting plate 130 can be fixed by the vacuum force provided through the second vacuum line 126.
  • the bonding head 100 moves while the chip 10 is fixed by the attracting plate 130 so that the chip 10 can be stacked on the wafer. In addition, the chip 10 can be pressed toward the wafer by the attracting plate 130.
  • the bonding head 100 further includes a cooling line 140.
  • the cooling line 140 cools the heating block 120 to cool the chip 10. As the chip 10 is cooled, the bumps of the chip 10 are cooled to form solder. At this time, the chip 10 can be cooled to about 100 ⁇ by the cooling line 140.
  • the cooling line 140 includes a first cooling line 142 and a second cooling line 144.
  • the first cooling line 142 extends from the base block 110 to the upper surface of the second block 114. And provides the cooling fluid to the heating block 120 through the first cooling line 142.
  • the cooling fluid include air, gas and the like. The cooling fluid directly contacts the heating block 120 to cool the heating block 120.
  • the second cooling line 144 is provided inside the first block 112 in the base block 110 and cools the first block 112. As the first block 112 is cooled, the third block 116, the second block 114, and the heating block 120 can be cooled through heat conduction. Thus, the second cooling line 144 can cooperatively cools the heating block 120.
  • the first cooling line 142 is used to primarily cool the heating block 120 and the second cooling line 144 to assist cooling. Accordingly, the cooling block 140 can be used to quickly cool the heating block 120. [ As the heating block 120 is cooled, the bumps of the chip 10 fixed to the attracting plate 130 can be quickly cooled to form the solder
  • the heating block 120 has an opening 127 for partially exposing the cooling line 140, specifically, the first cooling line 142.
  • the opening 127 may be a groove extending through the upper and lower portions of the heating block 120 and extending to the side.
  • the openings 127 may selectively expose a portion of the plurality of first cooling lines 142 extending to the top surface of the base block 110 or may partially expose each of the first cooling lines 142 .
  • the heating block 120 and the adsorption plate (not shown) 130 are uneven in temperature distribution. Therefore, the quality of the solder formed on the chip 10 may be deteriorated.
  • the openings 127 may be arranged to be symmetrical with respect to the center of the heating block 120 when the openings 127 selectively expose some of the plurality of first cooling lines 142. [ In this case, the quality of the solder formed on the chip 10 can be improved by making the temperature distribution of the heating block 120 and the attracting plate 130 relatively uniform.
  • a portion of the cooling fluid provided through the first cooling line 142 is provided to the heating block 120 to cool the heating block 120 and the remainder of the cooling fluid is supplied to the adsorption plate 130 through the opening 127 Thereby directly cooling the adsorption 130. That is, the cooling fluid provided through the first cooling line 142 can directly cool the adsorption plate 130 while cooling the adsorption plate 130 by cooling the heating block 120.
  • the cooling fluid provided through the first cooling line 142 may be discharged to the outside through the opening 127 after cooling the heating block 120 and the adsorption plate 130.
  • the bumps of the chip 10 fixed to the suction plate 130 can be cooled more quickly. Therefore, the bumps of the chip 10 melted by the heating block 120 can be rapidly cooled to form a solder of a good shape.
  • the opening 127 has a groove shape extending through the upper and lower sides of the heating block 120 and extending to the side, it is easy to form the opening 127 by processing the heating block 120.
  • the opening 127 has a groove shape extending through the heating block 120 and extending to the side surface, the suction plate 130 can be relatively exposed by the opening 127. Accordingly, the cooling fluid provided through the first cooling line 142 is discharged to the outside through the opening 127, so that the contact area with the adsorption plate 130 can be increased. Therefore, the effect of directly cooling the adsorption plate 130 by the cooling fluid provided through the first cooling line 142 can be further enhanced.
  • the opening 127 exposes less than about 30% of the area of the first cooling line 142, the effect of direct cooling of the adsorption plate 130 by the cooling fluid provided through the first cooling line 142 is relatively reduced . Therefore, it is difficult for the cooling fluid provided through the first cooling line 142 to rapidly cool the bumps of the chip 10.
  • the effect of cooling fluid provided through the first cooling line 142 to cool the heating block 120 may be relatively lowered. Even if the cooling fluid provided through the first cooling line 142 directly cools the adsorption plate 130, the heat of the heating block 120 can be transferred to the adsorption plate 130, so that the bumps of the chip 10 are rapidly cooled it's difficult. Further, since the area of the heating block 120 decreases as the area of the opening 127 increases, the amount of heat generated by the heating block 120 can be reduced. Therefore, it is difficult to rapidly dissolve the bumps of the chip 10.
  • the openings 127 can expose about 30% to 70% of the area of the first cooling line 142.
  • FIG. 3 is a cross-sectional view for explaining an opening of a heating block according to another embodiment of the present invention
  • FIG. 4 is a plan view for explaining an opening of the heating block shown in FIG.
  • the heating block 120 has an opening 128 that partially exposes the first cooling line 142.
  • the opening 128 may be a through hole passing through the top and bottom.
  • the cooling fluid supplied through the first cooling line 142 may be circulated along the first cooling line 142 or may be circulated between the heating block 120 and the adsorption plate 130 or between the heating block 120 and the base block 110, The first and second blocks 114 and 114 of the first embodiment.
  • the opening 128 may expose about 30% to 70% of the area of the first cooling line 142.
  • FIG. 5 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention.
  • the heating block 120 has an opening 128 that partially exposes the first cooling line 142.
  • the opening 128 may be a through hole passing through the top and bottom.
  • connection groove 129 connected to the opening 128 may be further formed.
  • the connection groove 129 may be provided on at least one of the upper surface of the heating block 120 and the lower surface of the attracting plate 130.
  • connection groove 129 may be formed on the upper surface of the heating block 120 as shown in FIG.
  • connection groove 129 may be formed on the lower surface of the attracting plate 130.
  • connection groove 129 may be formed on the upper surface of the heating block 120 and the lower surface of the attraction plate 130, respectively.
  • the cooling fluid provided through the first cooling line 142 may be discharged to the outside through the connection groove 129.
  • connection groove 129 may be formed to be connected to the opening 128 on at least one of the lower surface of the heating block 120 and the upper surface of the base block 110.
  • the bonding head 100 may further include a temperature sensor.
  • the temperature sensor is provided inside the heating block 120 and senses the temperature of the heating block 120.
  • the ON / OFF of the power provided to the heating element 122 and the injection of the cooling fluid in the cooling line 140, the temperature and the circulation of the coolant can be controlled according to the detection result of the temperature sensor.
  • the temperature sensor may be provided on the attracting plate 130.
  • the bonding head 100 melts the bumps of the chip 10 by heating the chips 10 with the heating block 120 in a state in which the chips 10 are transferred and adhered to the wafer.
  • the bonding head 100 then uses the cooling line 140 to cool the chip 10 to bond the chip 10 to the wafer. Since the bonding head 100 rapidly heats and rapidly cools the chip 10, it is possible to form a solder of good quality and good shape between the wafer and the chip 10. [
  • the bonding head 100 can quickly perform the heating and cooling of the chip 10, so that the efficiency of the process of bonding the chip 10 to the wafer can be improved.
  • the ratio of exposing the area of the first cooling line 114 of the base block 110 in a state where the opening 127 of the heating block 120 is maintained at a constant size in the bonding head 100 The time required for cooling the adsorption plate 130 to a predetermined temperature was measured.
  • the time required for the cooling of the adsorption plate 13 is the longest at 5.4 seconds and the opening 127 changes the area of the first cooling line 114 to 33.33 %, That is, 1/3 exposure, the time required for cooling the adsorption plate 13 was 3.5 seconds, which is the shortest.
  • the opening 127 exposes the area of the first cooling line 114 compared to when the opening 127 does not expose the area of the first cooling line 114, Short is known.
  • the cooling fluid provided through the first cooling line 142 cools the heating block 120 to indirectly cool the adsorption plate 130 It can be seen that the adsorption plate 130 is rapidly cooled by directly cooling the adsorption plate 130.
  • FIG. 6 is a schematic plan view for explaining a bonding apparatus according to an embodiment of the present invention
  • FIG. 7 is a plan view for explaining a chuck structure shown in FIG. 6
  • FIG. 8 is a cross- Fig. 9 is an enlarged cross-sectional view of the portion A shown in Fig. 6 enlarged.
  • the bonding apparatus 300 includes a bonding head 100 and a chuck structure 200.
  • the bonding head 100 includes a base block 110, a heating block 120, and a sucking plate 130 for transferring the chip 10 onto the chuck structure 200 and bonding the wafer 20 to the wafer 20.
  • the bonding head 100 may be provided so as to be able to horizontally move, vertically move, rotate, reverse, etc. in order to transport the chip 10.
  • bonding head 100 The detailed description of the bonding head 100 is substantially the same as that of the bonding head 100 shown in FIGS.
  • the bonding head 100 may be disposed such that the attraction plate 130 faces downward for bonding the chip 10 and the wafer 20.
  • the chuck structure 200 supports the wafer 20. At this time, a circuit pattern may be formed on the wafer 20.
  • the chuck structure 200 includes a heating plate 210, a chuck plate 220, a guide ring 230, a clamp 240, a power cable 250, and a temperature sensor 260.
  • the heating plate 210 has a substantially disc shape and incorporates a heating element 212 that generates heat by a power source applied from the outside.
  • the heating element 212 may be formed to have a predetermined pattern on the inner surface of the heating plate 210.
  • Examples of the heating element 212 include an electrode layer, a heating coil, and the like.
  • the heating plate 210 has a third vacuum line 214 and a fourth vacuum line 215 extending to the upper surface.
  • the third vacuum line 214 and the fourth vacuum line 215 may extend from the lower surface or side of the heating plate 210 to the upper surface, respectively.
  • the third vacuum line 214 and the fourth vacuum line 215 are not connected to each other.
  • the third vacuum line 214 is connected to a vacuum pump (not shown) and provides a vacuum force for adsorbing the wafer 20.
  • the fourth vacuum line 215 is connected to a vacuum pump (not shown) and provides a vacuum force for adsorbing the chuck plate 220.
  • the heating plate 210 has alignment pins 216 on its upper surface.
  • the alignment pins 216 are for aligning the heating plate 210 and the chuck plate 220, and a plurality of alignment pins may be provided.
  • the alignment pins 216 may be disposed on the upper surface edge of the heating plate 210.
  • the heating plate 210 has a groove 218 formed along the upper surface edge.
  • the groove 218 may be used to secure the guide ring 230.
  • the chuck plate 220 has a substantially disc shape and is placed on the heating plate 210.
  • the chuck plate 220 supports the wafer 20 on its upper surface.
  • the chuck plate 220 has a fifth vacuum line 222 connected to a third vacuum line 214 for adsorbing the wafer 20.
  • the fifth vacuum line 222 has a vacuum groove 222a and a plurality of vacuum holes 222b.
  • the vacuum groove 222a is formed on the lower surface of the chuck plate 220.
  • the vacuum groove 222a may have a shape in which concentric grooves and radially extending grooves are coupled with each other with respect to the center of the lower surface of the chuck plate 220, or may have a circular groove shape. At this time, the vacuum groove 222a does not extend to the lower edge of the chuck plate 220 to prevent leakage of the vacuum force.
  • the chuck plate 220 is placed on the heating plate 210 while the vacuum groove 222a is defined by the upper surface of the heating plate 210 to form a space. Further, the vacuum groove 222a is connected to the third vacuum line 214.
  • the vacuum holes 222b extend through the chuck plate 220 to the upper surface of the chuck plate 220 on the lower surface where the vacuum grooves 222a are formed.
  • the vacuum holes 222b are arranged to be spaced apart from each other.
  • the vacuum holes 222b may be arranged concentrically or radially.
  • the fifth vacuum line 222 is connected to the third vacuum line 214 and can vacuum the wafer 20 with the vacuum force provided through the third vacuum line 214.
  • the chuck plate 220 has a vacuum groove 223 connected to the fourth vacuum line 215 on the lower surface so as to be vacuum-adsorbed to the heating plate 210.
  • the vacuum groove 223 is formed on the lower surface of the chuck plate 220.
  • the vacuum groove 223 may have a shape in which concentric grooves and radially extending grooves are combined with each other with respect to the center of the lower surface of the chuck plate 220, or may have a circular groove shape. At this time, the vacuum groove 223 does not extend to the lower edge of the chuck plate 220 to prevent leakage of the vacuum force. Further, as shown in FIG. 8, the vacuum groove 223 may be formed so as not to be connected to the fifth vacuum line 222.
  • the chuck plate 220 is placed on the heating plate 210 while the vacuum groove 223 is defined by the upper surface of the heating plate 210 to form a space. Further, the vacuum groove 223 is connected to the fourth vacuum line 215.
  • the vacuum groove 223 is connected to the fourth vacuum line 215 and the chuck plate 220 can be tightly fixed on the heating plate 210 by the vacuum force provided through the fourth vacuum line 215 . Therefore, the wafer 20 on the chuck plate 220 can be supported evenly by minimizing warping and bending of the chuck plate 220.
  • the heating plate 210 and the chuck plate 220 can be kept in close contact by the vacuum force provided through the fourth vacuum line 215 and the vacuum groove 223. [ Therefore, a separate fastening member for fastening the heating plate 210 and the chuck plate 220 is unnecessary.
  • the vacuum force provided through the third vacuum line 214 and the fourth vacuum line 215 is released to separate and replace the heating plate 210 and the chuck plate 220. Therefore, the maintenance of the chuck structure 200 can be performed quickly.
  • the vacuum force can leak through the gap between the heating plate 210 and the chuck plate 220.
  • the upper surface of the heating plate 210 and the lower surface of the chuck plate 220 each have a flatness of about 10 ⁇ ⁇ or less, preferably 7 ⁇ ⁇ or less.
  • the heating plate 210 and the chuck plate 220 can be in close contact with each other, and the vacuum force can be prevented from leaking through the space between the heating plate 210 and the chuck plate 220.
  • the chuck plate 220 transfers heat generated in the heating plate 210 to the wafer 20.
  • the wafer 20 can be maintained at a temperature of about 140 to 150 ° C. so that the bonding of the chip 10 and the wafer 20 is facilitated.
  • the heating plate 210 and the chuck plate 220 may each be made of a ceramic material.
  • An example of the ceramic material is aluminum nitride (AlN). Since the aluminum nitride has a high thermal conductivity, the heat generated in the heating body 212 can be uniformly transferred to the heating plate 210 and the chuck plate 220. In addition, the temperature distribution of the chuck plate 220 can be made uniform, and the wafer 20 can be uniformly heated.
  • the chuck plate 220 has a receiving groove 224 for receiving the alignment pin 216.
  • the receiving groove 224 may be formed at a position corresponding to the alignment pin 216 of the heating plate 210.
  • the receiving groove 224 may also be disposed at the edge of the chuck plate 220.
  • the alignment pin 216 of the heating plate 210 can be inserted into the receiving groove 224 of the chuck plate 220 when the chuck plate 220 is seated on the upper surface of the heating plate 210. Accordingly, the heating plate 210 and the chuck plate 220 can be accurately aligned.
  • the heating plate 210 is provided with the alignment pins 216 and the chuck plate 220 is formed with the receiving grooves 224.
  • the receiving grooves are formed in the heating plate 210, 220 may be provided with alignment pins.
  • the chuck plate 220 also has a groove 226 formed along the top edge. Groove 226 may be used to secure clamp 240.
  • the guide ring 230 hits the groove 218 formed along the upper edge of the heating plate 210 and guides the periphery of the heating plate 210.
  • the guide ring 230 has a first locking protrusion 232, and the guide ring 230 is mounted on the heating plate 210 by engaging the first locking protrusion 232 with the groove 218.
  • the upper surface of the guide ring 230 and the upper surface of the heating plate 210 may be located at the same height.
  • the chuck plate 220 can be easily placed on the upper surface of the heating plate 210 while the guide ring 230 is mounted on the heating plate 210.
  • the clamp 240 is fixed to the guide ring so as to cover the top edge of the chuck plate 220.
  • the clamp 240 can be fixed to the guide ring 230 by a fastening screw 242.
  • a plurality of clamps 240 may be provided to partially cover the top edge of the chuck plate 220.
  • the clamp 240 has a generally ring shape and may cover the entire upper edge of the chuck plate 220 as a whole.
  • the clamp 240 can be pressed downward by the clamp 240 because the clamp 240 is fixed to the guide ring 230 while covering the top edge of the chuck plate 220. [ Therefore, the clamp 240 can bring the chuck plate 220 into close contact with the heating plate 210. Therefore, leakage of the vacuum force can be additionally prevented between the heating plate 210 and the chuck plate 220.
  • the clamp 240 has a second latching jaw 244 and the second latching jaw 244 can be placed in the groove 226 of the chuck plate 220. Therefore, the upper surface of the clamp 240 and the upper surface of the chuck plate 220 can be positioned at the same height. Therefore, the wafer 20 can be reliably transferred to the upper surface of the chuck plate 220 without interference of the clamp 240 and can be seated.
  • the guide ring 230 and the clamp 240 may each be made of a ceramic material.
  • the guide ring 230 and the clamp 240 may be formed of a ceramic material having a thermal conductivity lower than that of the heating plate 210 and the chuck plate 220.
  • the guide ring 230 and the clamp 240 may be made of aluminum oxide (Al 2 O 3). Since the aluminum oxide has a thermal conductivity lower than that of aluminum nitride, the guide ring 230 and the clamp 240 can prevent heat loss through the side surfaces of the heating plate 210 and the chuck plate 220.
  • the power cable 250 extends to the inside of the heating plate 210 and is connected to the heating body 212, and the heating body 212 provides power for generating heat.
  • the temperature sensor 260 extends from the outside of the heating plate 210 to the inside thereof, and measures the temperature of the heating element 212.
  • the temperature measured by the temperature sensor 260 may be used for temperature control of the heating element 212.
  • thermocouple An example of the temperature sensor 260 is a thermocouple.
  • the chuck structure 200 can bring the heating plate 210 and the chuck plate 220 into close contact with each other with a vacuum force for attracting the wafer 20. Therefore, a separate fastening member for fastening the heating plate 210 and the chuck plate 220 is unnecessary.
  • the heating plate 210 and the chuck plate 220 can be separated and replaced. Therefore, the maintenance of the chuck structure 200 can be performed quickly.
  • the bonding apparatus 300 fixes the wafer 20 using the chuck structure 200 and transfers the chip 10 to the wafer 20 while the chip 10 is heated to a predetermined temperature by the bonding head 100,
  • the chip 10 is bonded to the wafer 20 by melting the bumps of the chip 10 by heating the chip 10 with the bonding head 100 and then cooling the chip 10. Therefore, solder of good quality and good shape can be formed between the chip 10 and the wafer 20.
  • the heating and cooling of the chip 10 can be performed quickly, the efficiency of the process of bonding the chip 10 using the bonding apparatus 300 to the wafer 20 can be improved.
  • the bonding head according to the present invention can reduce the maintenance cost and can bond the wafer and the chip quickly and stably. Therefore, efficiency and productivity of the bonding process using the bonding head can be improved.
  • the bonding apparatus can bring the heating plate and the chuck plate into close contact with each other by vacuum force in the chuck structure.
  • the heating plate and the chuck plate can be separated from each other by releasing only the vacuum force, so that maintenance or replacement of the chuck structure can be performed quickly.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention concerne une tête de liaison d'un dispositif de liaison comprenant : un bloc de base; un bloc chauffant disposé sur le bloc de base et équipé d'un élément chauffant pour générer de la chaleur à l'aide de l'énergie appliquée depuis l'extérieur pour chauffer une bosse d'une puce, et ayant une première ligne de vide et une seconde ligne de vide s'étendant jusqu'à la surface supérieure afin de fournir une force de vide; une plaque d'aspiration fixée sur le bloc chauffant par la force de vide de la première ligne de vide et ayant un orifice d'aspiration relié à la seconde ligne de vide de façon à fixer la puce au moyen de la force de vide; et une ligne de refroidissement s'étendant de l'intérieur du bloc de base à la surface supérieure du bloc de base et fournissant un fluide de refroidissement au bloc chauffant pour refroidir la bosse de la puce, formant ainsi une brasure. Le bloc chauffant peut avoir une ouverture qui expose partiellement la ligne de refroidissement de sorte que le fluide de refroidissement dans la ligne de refroidissement soit fourni à la plaque d'aspiration pour refroidir davantage la bosse de la puce.
PCT/KR2018/006275 2017-06-27 2018-06-01 Tête de liaison et dispositif de liaison la comprenant Ceased WO2019004620A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170080984A KR102439617B1 (ko) 2017-06-27 2017-06-27 본딩 헤드 및 이를 갖는 본딩 장치
KR10-2017-0080984 2017-06-27

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WO2019004620A1 true WO2019004620A1 (fr) 2019-01-03

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TW (1) TWI760499B (fr)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992730A (zh) * 2021-02-04 2021-06-18 中国电子科技集团公司第二十四研究所 半密闭共晶贴片装置及共晶贴片方法
CN116571406A (zh) * 2022-02-10 2023-08-11 爱思开矽得荣株式会社 用于晶圆安装的蜡涂覆设备及相关的晶圆安装设备

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI768640B (zh) * 2020-09-08 2022-06-21 旺矽科技股份有限公司 金屬載具及晶圓承載裝置
KR102435062B1 (ko) * 2021-12-20 2022-08-22 주식회사 미코세라믹스 본딩 헤드 및 이를 포함하는 본딩 장치
CN114446833B (zh) * 2022-01-25 2023-03-24 北京北方华创微电子装备有限公司 承载装置及半导体工艺设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110081917A (ko) * 2010-01-09 2011-07-15 주식회사 리빙케어 냉각 제어를 이용한 웨이퍼 다이싱용 척 장치
JP2011243860A (ja) * 2010-05-20 2011-12-01 Renesas Electronics Corp 半導体装置の製造方法
KR20120040368A (ko) * 2010-10-19 2012-04-27 에스케이하이닉스 주식회사 와이어 본딩 장치용 히터블록
KR20130049819A (ko) * 2003-06-30 2013-05-14 램 리써치 코포레이션 다이나믹 온도 제어를 가지는 기판 지지대
JP2016127170A (ja) * 2015-01-06 2016-07-11 東京エレクトロン株式会社 載置台及び基板処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078299A (ja) * 2001-09-06 2003-03-14 Toshiba Corp ステージ装置、実装装置ならびに電気部品の製造方法
JP2003209142A (ja) 2002-01-17 2003-07-25 Sony Corp ボンディングヘッドおよび実装装置
JP4014481B2 (ja) * 2002-04-30 2007-11-28 東レエンジニアリング株式会社 ボンディング方法およびその装置
JP2007329306A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 熱圧着装置
JP4808283B1 (ja) * 2010-06-30 2011-11-02 株式会社新川 電子部品実装装置及び電子部品実装方法
US8177862B2 (en) * 2010-10-08 2012-05-15 Taiwan Semiconductor Manufacturing Co., Ltd Thermal compressive bond head
JP6088835B2 (ja) * 2012-09-28 2017-03-01 東京応化工業株式会社 貼合装置および貼り合わせ方法
CH707480B1 (de) * 2013-01-21 2016-08-31 Besi Switzerland Ag Bondkopf mit einem heiz- und kühlbaren Saugorgan.
US9576928B2 (en) * 2015-02-27 2017-02-21 Kulicke And Soffa Industries, Inc. Bond head assemblies, thermocompression bonding systems and methods of assembling and operating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130049819A (ko) * 2003-06-30 2013-05-14 램 리써치 코포레이션 다이나믹 온도 제어를 가지는 기판 지지대
KR20110081917A (ko) * 2010-01-09 2011-07-15 주식회사 리빙케어 냉각 제어를 이용한 웨이퍼 다이싱용 척 장치
JP2011243860A (ja) * 2010-05-20 2011-12-01 Renesas Electronics Corp 半導体装置の製造方法
KR20120040368A (ko) * 2010-10-19 2012-04-27 에스케이하이닉스 주식회사 와이어 본딩 장치용 히터블록
JP2016127170A (ja) * 2015-01-06 2016-07-11 東京エレクトロン株式会社 載置台及び基板処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992730A (zh) * 2021-02-04 2021-06-18 中国电子科技集团公司第二十四研究所 半密闭共晶贴片装置及共晶贴片方法
CN116571406A (zh) * 2022-02-10 2023-08-11 爱思开矽得荣株式会社 用于晶圆安装的蜡涂覆设备及相关的晶圆安装设备
US12451378B2 (en) 2022-02-10 2025-10-21 Sk Siltron Co., Ltd. Wax coating apparatus for wafer mounting and wafer mounting apparatus including same
CN116571406B (zh) * 2022-02-10 2026-01-13 爱思开矽得荣株式会社 用于晶圆安装的蜡涂覆设备及相关的晶圆安装设备

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TWI760499B (zh) 2022-04-11
TW201906062A (zh) 2019-02-01
KR20190001271A (ko) 2019-01-04

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