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WO2019051940A1 - Procédé de fabrication de panneau flexible à delo - Google Patents

Procédé de fabrication de panneau flexible à delo Download PDF

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Publication number
WO2019051940A1
WO2019051940A1 PCT/CN2017/108201 CN2017108201W WO2019051940A1 WO 2019051940 A1 WO2019051940 A1 WO 2019051940A1 CN 2017108201 W CN2017108201 W CN 2017108201W WO 2019051940 A1 WO2019051940 A1 WO 2019051940A1
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WO
WIPO (PCT)
Prior art keywords
layer
oled
flexible
tft
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/108201
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English (en)
Chinese (zh)
Inventor
李松杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2019051940A1 publication Critical patent/WO2019051940A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10P54/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a flexible OLED panel.
  • OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • the area is full-color display and many other advantages, and is recognized by the industry as the most promising display device.
  • OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, the OLED display has a very high requirement for packaging, and therefore, the sealing of the OLED device is improved by the packaging of the OLED device, as much as possible with the external environment. Isolation is critical for stable illumination of OLED devices.
  • the packaging of OLED devices is mainly packaged on a hard package substrate (such as glass or metal), but the method is not suitable for flexible devices, and the flexible OLED display is an inevitable trend in the development of the display industry in the future. Therefore, there are also technologies.
  • the OLED device is packaged by a laminated film.
  • the film is generally formed by forming two layers of a barrier layer of an inorganic material as a barrier layer over the OLED device on the substrate, between the two barrier layers. Form a layer of a flexible buffer layer of organic material.
  • this packaging technology has been relatively mature, and has achieved good packaging effects and applied to related products.
  • a flexible OLED display is a flexible display device made of a flexible substrate, usually using a flexible polyimide (PI) substrate, wherein the flexible PI substrate is coated with a layer of PI on a common glass substrate. The film is formed.
  • the flexible PI substrate is peeled off from the glass substrate by using a laser.
  • the permeability is only about 90%, so it takes a very high energy (460-500mj) to remove the flexible PI substrate from the glass substrate during laser stripping, and the high-energy laser can seriously damage the flexible PI substrate and the above.
  • a Thin Film Transistor (TFT) device affects the electrical properties of the TFT device, resulting in a decrease in yield.
  • the present invention provides a method for fabricating a flexible OLED panel, comprising the following steps:
  • Step S1 providing a glass substrate, forming a flexible substrate on the glass substrate, forming a TFT layer on the flexible substrate, and forming an OLED layer on the TFT layer;
  • Step S2 performing laser stripping on the flexible substrate by using a laser to peel off the flexible substrate from the glass substrate;
  • the transmittance of the glass substrate to the laser light used in the step S2 is 96% or more.
  • the flexible substrate formed in the step S1 is a polyimide substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate, baking it to obtain a polyacyl group.
  • a flexible substrate of an imide material is a polyimide substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate, baking it to obtain a polyacyl group.
  • the wavelength of the laser light used in the step S2 is 308 nm.
  • the energy of the laser used in the step S2 is 400-430 mj.
  • the TFT layer formed in the step S1 is used for driving the OLED layer, and includes a plurality of arrayed TFT devices, and the TFT device is of a low temperature polysilicon type or a metal oxide type.
  • the OLED layer formed in the step S1 includes a first electrode layer disposed on the TFT layer, a pixel defining layer disposed on the TFT layer and the first electrode layer, and an organic layer disposed on the first electrode layer a functional layer, and a second electrode layer disposed on the pixel defining layer and the organic functional layer;
  • the pixel defining layer encloses a plurality of pixel openings arranged in an array on the first electrode layer; the organic functional layer is disposed in the pixel opening; an organic functional layer in each pixel opening, and a corresponding lower portion thereof An electrode layer, and a corresponding second electrode layer thereon, together constitute an OLED device.
  • the specific process of forming the OLED layer in the step S1 is: forming a first electrode layer on the TFT layer, forming a pixel defining layer on the TFT layer and the first electrode layer, and multiple layers in the pixel defining layer An organic functional layer is formed in the pixel opening, and a second electrode layer is formed on the pixel defining layer and the organic functional layer.
  • the first electrode layer and the second electrode layer are respectively used as an anode and a cathode of the OLED device, and the first electrode layer is an indium tin oxide layer/silver layer/indium tin oxide layer. Laminated material.
  • the organic functional layer includes a hole injection layer, a hole transport layer, a light-emitting layer, which are sequentially disposed, Electron transport layer and electron injection layer.
  • the step S1 further includes forming an encapsulation layer on the OLED layer after the OLED layer is formed to encapsulate the OLED layer;
  • the encapsulation layer is a thin film encapsulation structure including an inorganic barrier layer and an organic buffer layer disposed in a stack.
  • the invention also provides a manufacturing method of a flexible OLED panel, comprising the following steps:
  • Step S1 providing a glass substrate, forming a flexible substrate on the glass substrate, forming a TFT layer on the flexible substrate, and forming an OLED layer on the TFT layer;
  • Step S2 performing laser stripping on the flexible substrate by using a laser to peel off the flexible substrate from the glass substrate;
  • the transmittance of the glass substrate to the laser light used in the step S2 is 96% or more
  • the flexible substrate formed in the step S1 is a polyimide substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate, and baking the same. a flexible substrate of polyimide material;
  • the wavelength of the laser used in the step S2 is 308 nm
  • the energy of the laser used in the step S2 is 400-430 mj;
  • the TFT layer formed in the step S1 is used for driving the OLED layer, and comprises a plurality of arrayed TFT devices, wherein the TFT device is a low temperature polysilicon type or a metal oxide type;
  • the OLED layer formed in the step S1 includes a first electrode layer disposed on the TFT layer, a pixel defining layer disposed on the TFT layer and the first electrode layer, and disposed on the first electrode layer.
  • the pixel defining layer encloses a plurality of pixel openings arranged in an array on the first electrode layer; the organic functional layer is disposed in the pixel opening; an organic functional layer in each pixel opening, and a corresponding lower portion thereof An electrode layer, and a corresponding second electrode layer thereon, together constitute an OLED device.
  • the present invention provides a method for fabricating a flexible OLED panel by first coating a flexible substrate on a highly transparent glass substrate, and sequentially fabricating a TFT layer and an OLED on the flexible substrate. The layer is finally laser-peeled by a laser to peel the flexible substrate from the glass substrate. Since the transmittance of the glass substrate to the laser is 96% or more, laser stripping technology is adopted. When the flexible base substrate is peeled off from the glass substrate, most of the laser light can be transmitted through the glass substrate, so that the flexible substrate can be peeled off from the glass substrate by using lower energy, thereby not affecting the flexible substrate. The performance of the substrate and the TFT layer can obtain normal TFT electrical properties and can greatly improve product yield.
  • FIG. 1 is a schematic flow chart of a method for fabricating a flexible OLED panel of the present invention
  • step S1 of the method for fabricating a flexible OLED panel of the present invention is a schematic diagram of step S1 of the method for fabricating a flexible OLED panel of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating a flexible OLED panel of the present invention.
  • the present invention provides a method for fabricating a flexible OLED panel, including the following steps:
  • Step S1 as shown in FIG. 2-3, a glass substrate 500 having high light transmission is provided, a flexible substrate substrate 110 is formed on the glass substrate 500, and a TFT layer 120 is formed on the flexible substrate substrate 110.
  • the OLED layer 130 is formed on the TFT layer 120; the transmittance of the glass substrate 500 to laser light having a wavelength of 308 nm is 96% or more.
  • the flexible substrate substrate 110 formed in the step S1 is a polyimide (PI) substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate 500, This is baked to obtain a flexible base substrate 110 of a polyimide material.
  • PI polyimide
  • the TFT layer 120 formed in the step S1 is used to drive the OLED layer 130, and includes a plurality of arrayed TFT devices.
  • the TFT device is Low Temperature Poly-silicon (LTPS).
  • LTPS Low Temperature Poly-silicon
  • MOS metal-oxide semiconductor
  • IGZO indium gallium zinc oxide
  • the OLED layer 130 formed in the step S1 includes a first electrode layer 131 disposed on the TFT layer 120, a pixel defining layer 135 disposed on the TFT layer 120 and the first electrode layer 131, An organic functional layer 132 disposed on the first electrode layer 131 and a second electrode layer 133 disposed on the pixel defining layer 135 and the organic functional layer 132.
  • the pixel defining layer 135 encloses a plurality of arrayed pixel openings 138 on the first electrode layer 131; the organic functional layer 132 is disposed in the pixel opening 138; each pixel The organic functional layer 132 in the opening 138, the corresponding first electrode layer 131 below it, and the corresponding second electrode layer 133 above thereof together constitute an OLED device D.
  • the specific process of forming the OLED layer 130 in the step S1 is: forming a first electrode layer 131 on the TFT layer 120, and forming a pixel defining layer 135 on the TFT layer 120 and the first electrode layer 131.
  • An organic functional layer 132 is formed in the plurality of pixel openings 138 of the pixel defining layer 135, and a second electrode layer 133 is formed on the pixel defining layer 135 and the organic functional layer 132.
  • the first electrode layer 131 and the second electrode layer 133 are respectively used as an anode (Anode) and a cathode (Cathode) of the OLED device D, and the first electrode layer 131 is a laminated material of a transparent indium tin oxide layer/silver layer/indium tin oxide layer (ITO/Ag/ITO).
  • the organic functional layer 132 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from bottom to top.
  • the step S1 further includes forming an encapsulation layer (not shown) on the OLED layer 130 after the OLED layer 130 is formed to encapsulate the OLED layer 130.
  • the encapsulation layer is a thin film encapsulation structure including an inorganic barrier layer and an organic buffer layer disposed in a stack.
  • Step S2 as shown in FIG. 4, the flexible base substrate 110 is subjected to laser lift-off using a laser having a wavelength of 308 nm, and the flexible base substrate 110 is peeled off from the glass substrate 500.
  • the glass substrate 500 is a highly translucent substrate, the transmittance of the laser light having a wavelength of 308 nm is 96% or more. Therefore, in the step S2, the lower energy is used in comparison with the prior art.
  • the laser specifically a laser of 400-430 mj energy, can peel the flexible substrate 110 from the glass substrate 500.
  • the flexible substrate substrate 110 is formed by coating on the highly transparent glass substrate 500, and the transmittance of the glass substrate 500 to the laser light having a wavelength of 308 nm is 96% or more.
  • the flexible substrate 110 is peeled off from the glass substrate 500 by the 308 nm laser lift-off technique, most of the laser light can be transmitted through the glass substrate 500, so that the flexible substrate 110 can be removed from the glass substrate 500 using lower energy.
  • the upper portion is peeled off, thereby not affecting the performance of the flexible substrate 110 and the TFT layer 120 thereon, and normal TFT electrical properties can be obtained, and the product yield can be greatly improved.
  • the present invention provides a method for fabricating a flexible OLED panel by first coating a flexible substrate on a highly transparent glass substrate, and sequentially fabricating a TFT layer and an OLED layer on the flexible substrate. Finally, the flexible base substrate is laser-peeled by a laser to peel the flexible substrate from the glass substrate, and the laser substrate is transmitted through the laser.
  • the rate is 96% or more
  • the flexible substrate is peeled off from the glass substrate by the laser lift-off technique, most of the laser light can be transmitted through the glass substrate, so that the flexible substrate can be made from the glass substrate with lower energy.
  • the peeling down without affecting the performance of the flexible substrate and the TFT layer, can obtain normal TFT electrical properties, and can greatly improve the product yield.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un panneau flexible à DELO. D'abord, un substrat de verre (500) hautement transparent est appliqué pour former un substrat de base (110) flexible ; puis une couche de TFT (120) et une couche de DELO (130) sont fabriquées séquentiellement sur le substrat de base (110) flexible ; et enfin, un arrachage laser est mis en œuvre sur le substrat de base (110) flexible au moyen d'un laser, de sorte que le substrat de base (110) flexible est arraché du substrat de verre (500). Puisque la transmittance du substrat de base de verre (500) par rapport au laser est supérieure à 96 %, la plus grande partie du laser peut être transmise à travers le substrat de verre (500) lorsque le substrat de base (110) flexible est arraché du substrat de verre (500) grâce à une technologie d'arrachage laser, et ainsi le substrat de base (110) flexible peut être arraché du substrat de verre (500) au moyen d'une énergie plus basse, et cela peut empêcher d'affecter la performance du substrat de base (110) flexible et la couche de TFT (120). Une propriété électrique TFT normale peut être acquise, et le rendement peut être grandement amélioré.
PCT/CN2017/108201 2017-09-13 2017-10-29 Procédé de fabrication de panneau flexible à delo Ceased WO2019051940A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710824009.8 2017-09-13
CN201710824009.8A CN107644891A (zh) 2017-09-13 2017-09-13 柔性oled面板的制作方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111627964A (zh) * 2020-05-25 2020-09-04 福建华佳彩有限公司 一种新型柔性激光剥离面板及其制备方法
CN112467017A (zh) * 2020-11-16 2021-03-09 福建华佳彩有限公司 一种新型Mini LED的柔性封装结构及其制备方法
CN114267644A (zh) * 2020-09-16 2022-04-01 群创光电股份有限公司 电子装置的制作方法

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CN108321177B (zh) * 2018-02-02 2021-03-02 北京京东方显示技术有限公司 一种柔性显示面板，其制备方法及可穿戴装置
CN110211990B (zh) * 2018-02-28 2021-11-02 上海和辉光电股份有限公司 一种显示面板及显示装置
CN109087998A (zh) * 2018-07-25 2018-12-25 武汉华星光电半导体显示技术有限公司 一种柔性显示面板及其制造方法
CN109326712B (zh) * 2018-10-23 2023-03-21 京东方科技集团股份有限公司 一种柔性基板的制备方法、柔性基板和显示面板
CN109273515B (zh) * 2018-11-02 2020-12-11 京东方科技集团股份有限公司 一种像素结构、柔性显示基板及其制作方法、显示装置
CN109638156B (zh) * 2018-12-10 2020-09-01 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制作方法
CN110231891B (zh) * 2019-07-24 2024-12-03 蓝思科技（长沙）有限公司 一种柔性盖板及其制备方法、柔性oled显示屏
CN110783253B (zh) * 2019-10-31 2022-05-24 京东方科技集团股份有限公司 一种显示基板的制作方法、显示基板和显示装置
CN112331803A (zh) * 2020-11-04 2021-02-05 福建华佳彩有限公司 一种柔性oled器件结构及其制造方法
WO2022226899A1 (fr) * 2021-04-29 2022-11-03 京东方科技集团股份有限公司 Substrat d'affichage, son procédé de préparation et appareil d'affichage
CN114122010B (zh) * 2021-11-10 2023-06-27 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
CN115846913A (zh) * 2022-11-25 2023-03-28 中国科学院西安光学精密机械研究所 一种基于短脉冲激光扫描的图像探测器光学玻璃去除方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111627964A (zh) * 2020-05-25 2020-09-04 福建华佳彩有限公司 一种新型柔性激光剥离面板及其制备方法
CN114267644A (zh) * 2020-09-16 2022-04-01 群创光电股份有限公司 电子装置的制作方法
CN112467017A (zh) * 2020-11-16 2021-03-09 福建华佳彩有限公司 一种新型Mini LED的柔性封装结构及其制备方法

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