WO2019051940A1 - Method for manufacturing a flexible oled panel - Google Patents

Abstract

A method for fabricating a flexible OLED panel, firstly forming a flexible substrate substrate (110) on a highly transparent glass substrate (500), and sequentially forming a TFT layer (120) on the flexible substrate substrate (110) And the OLED layer (130), and finally the laser is used to laser-peel the flexible substrate (110) to peel off the flexible substrate (110) from the glass substrate (500), since the glass substrate (500) is laser-coated The transmittance is 96% or more. When the flexible substrate (110) is peeled off from the glass substrate (500) by laser lift-off technology, most of the laser light can be transmitted through the glass substrate (500), resulting in lower use. The energy can be used to peel off the flexible substrate (110) from the glass substrate (500), thereby not affecting the performance of the flexible substrate (110) and the TFT layer (120), and normal TFT electrical properties can be obtained. Can greatly improve product yield.

Description

Flexible OLED panel manufacturing method Technical field

The present invention relates to the field of display technologies, and in particular, to a method for fabricating a flexible OLED panel.

Background technique

Organic Light Emitting Diode (OLED) display has self-luminous, low driving voltage, high luminous efficiency, short response time, high definition and contrast, near 180° viewing angle, wide temperature range, flexible display and large The area is full-color display and many other advantages, and is recognized by the industry as the most promising display device.

OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, the OLED display has a very high requirement for packaging, and therefore, the sealing of the OLED device is improved by the packaging of the OLED device, as much as possible with the external environment. Isolation is critical for stable illumination of OLED devices.

At present, the packaging of OLED devices is mainly packaged on a hard package substrate (such as glass or metal), but the method is not suitable for flexible devices, and the flexible OLED display is an inevitable trend in the development of the display industry in the future. Therefore, there are also technologies. The OLED device is packaged by a laminated film. The film is generally formed by forming two layers of a barrier layer of an inorganic material as a barrier layer over the OLED device on the substrate, between the two barrier layers. Form a layer of a flexible buffer layer of organic material. At present, this packaging technology has been relatively mature, and has achieved good packaging effects and applied to related products.

A flexible OLED display is a flexible display device made of a flexible substrate, usually using a flexible polyimide (PI) substrate, wherein the flexible PI substrate is coated with a layer of PI on a common glass substrate. The film is formed. After the OLED device is fabricated, the flexible PI substrate is peeled off from the glass substrate by using a laser. However, the existing process neglects the influence of the transmittance of the glass substrate, and the general glass substrate is used for laser wear. The permeability is only about 90%, so it takes a very high energy (460-500mj) to remove the flexible PI substrate from the glass substrate during laser stripping, and the high-energy laser can seriously damage the flexible PI substrate and the above. A Thin Film Transistor (TFT) device affects the electrical properties of the TFT device, resulting in a decrease in yield.

Summary of the invention

It is an object of the present invention to provide a method for fabricating a flexible OLED panel, which can be used to peel off a flexible substrate from a glass substrate without affecting the performance of the flexible substrate and the TFT layer. Normal TFT electrical properties, which greatly improve product yield.

To achieve the above objective, the present invention provides a method for fabricating a flexible OLED panel, comprising the following steps:

Step S1, providing a glass substrate, forming a flexible substrate on the glass substrate, forming a TFT layer on the flexible substrate, and forming an OLED layer on the TFT layer;

Step S2, performing laser stripping on the flexible substrate by using a laser to peel off the flexible substrate from the glass substrate;

The transmittance of the glass substrate to the laser light used in the step S2 is 96% or more.

The flexible substrate formed in the step S1 is a polyimide substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate, baking it to obtain a polyacyl group. A flexible substrate of an imide material.

The wavelength of the laser light used in the step S2 is 308 nm.

The energy of the laser used in the step S2 is 400-430 mj.

The TFT layer formed in the step S1 is used for driving the OLED layer, and includes a plurality of arrayed TFT devices, and the TFT device is of a low temperature polysilicon type or a metal oxide type.

The OLED layer formed in the step S1 includes a first electrode layer disposed on the TFT layer, a pixel defining layer disposed on the TFT layer and the first electrode layer, and an organic layer disposed on the first electrode layer a functional layer, and a second electrode layer disposed on the pixel defining layer and the organic functional layer;

The pixel defining layer encloses a plurality of pixel openings arranged in an array on the first electrode layer; the organic functional layer is disposed in the pixel opening; an organic functional layer in each pixel opening, and a corresponding lower portion thereof An electrode layer, and a corresponding second electrode layer thereon, together constitute an OLED device.

The specific process of forming the OLED layer in the step S1 is: forming a first electrode layer on the TFT layer, forming a pixel defining layer on the TFT layer and the first electrode layer, and multiple layers in the pixel defining layer An organic functional layer is formed in the pixel opening, and a second electrode layer is formed on the pixel defining layer and the organic functional layer.

In the OLED layer formed in the step S1, the first electrode layer and the second electrode layer are respectively used as an anode and a cathode of the OLED device, and the first electrode layer is an indium tin oxide layer/silver layer/indium tin oxide layer. Laminated material.

The organic functional layer includes a hole injection layer, a hole transport layer, a light-emitting layer, which are sequentially disposed, Electron transport layer and electron injection layer.

The step S1 further includes forming an encapsulation layer on the OLED layer after the OLED layer is formed to encapsulate the OLED layer;

The encapsulation layer is a thin film encapsulation structure including an inorganic barrier layer and an organic buffer layer disposed in a stack.

The invention also provides a manufacturing method of a flexible OLED panel, comprising the following steps:

Step S1, providing a glass substrate, forming a flexible substrate on the glass substrate, forming a TFT layer on the flexible substrate, and forming an OLED layer on the TFT layer;

Step S2, performing laser stripping on the flexible substrate by using a laser to peel off the flexible substrate from the glass substrate;

The transmittance of the glass substrate to the laser light used in the step S2 is 96% or more;

The flexible substrate formed in the step S1 is a polyimide substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate, and baking the same. a flexible substrate of polyimide material;

Wherein, the wavelength of the laser used in the step S2 is 308 nm;

Wherein, the energy of the laser used in the step S2 is 400-430 mj;

The TFT layer formed in the step S1 is used for driving the OLED layer, and comprises a plurality of arrayed TFT devices, wherein the TFT device is a low temperature polysilicon type or a metal oxide type;

The OLED layer formed in the step S1 includes a first electrode layer disposed on the TFT layer, a pixel defining layer disposed on the TFT layer and the first electrode layer, and disposed on the first electrode layer. An organic functional layer, and a second electrode layer disposed on the pixel defining layer and the organic functional layer;

The pixel defining layer encloses a plurality of pixel openings arranged in an array on the first electrode layer; the organic functional layer is disposed in the pixel opening; an organic functional layer in each pixel opening, and a corresponding lower portion thereof An electrode layer, and a corresponding second electrode layer thereon, together constitute an OLED device.

Advantageous Effects of Invention The present invention provides a method for fabricating a flexible OLED panel by first coating a flexible substrate on a highly transparent glass substrate, and sequentially fabricating a TFT layer and an OLED on the flexible substrate. The layer is finally laser-peeled by a laser to peel the flexible substrate from the glass substrate. Since the transmittance of the glass substrate to the laser is 96% or more, laser stripping technology is adopted. When the flexible base substrate is peeled off from the glass substrate, most of the laser light can be transmitted through the glass substrate, so that the flexible substrate can be peeled off from the glass substrate by using lower energy, thereby not affecting the flexible substrate. The performance of the substrate and the TFT layer can obtain normal TFT electrical properties and can greatly improve product yield.

In order to further understand the features and technical contents of the present invention, please refer to the following related The detailed description of the invention and the accompanying drawings are intended to illustrate

DRAWINGS

The technical solutions and other advantageous effects of the present invention will be apparent from the following detailed description of embodiments of the invention.

In the drawings,

1 is a schematic flow chart of a method for fabricating a flexible OLED panel of the present invention;

2-3 is a schematic diagram of step S1 of the method for fabricating a flexible OLED panel of the present invention;

4 is a schematic diagram of step S2 of the method for fabricating a flexible OLED panel of the present invention.

Detailed ways

In order to further clarify the technical means and effects of the present invention, the following detailed description will be made in conjunction with the preferred embodiments of the invention and the accompanying drawings.

Referring to FIG. 1 , the present invention provides a method for fabricating a flexible OLED panel, including the following steps:

Step S1, as shown in FIG. 2-3, a glass substrate 500 having high light transmission is provided, a flexible substrate substrate 110 is formed on the glass substrate 500, and a TFT layer 120 is formed on the flexible substrate substrate 110. The OLED layer 130 is formed on the TFT layer 120; the transmittance of the glass substrate 500 to laser light having a wavelength of 308 nm is 96% or more.

Specifically, the flexible substrate substrate 110 formed in the step S1 is a polyimide (PI) substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate 500, This is baked to obtain a flexible base substrate 110 of a polyimide material.

Specifically, the TFT layer 120 formed in the step S1 is used to drive the OLED layer 130, and includes a plurality of arrayed TFT devices. The TFT device is Low Temperature Poly-silicon (LTPS). A metal oxide semiconductor type, such as a metal-oxide semiconductor (MOS) type, such as indium gallium zinc oxide (IGZO).

Specifically, the OLED layer 130 formed in the step S1 includes a first electrode layer 131 disposed on the TFT layer 120, a pixel defining layer 135 disposed on the TFT layer 120 and the first electrode layer 131, An organic functional layer 132 disposed on the first electrode layer 131 and a second electrode layer 133 disposed on the pixel defining layer 135 and the organic functional layer 132.

Specifically, the pixel defining layer 135 encloses a plurality of arrayed pixel openings 138 on the first electrode layer 131; the organic functional layer 132 is disposed in the pixel opening 138; each pixel The organic functional layer 132 in the opening 138, the corresponding first electrode layer 131 below it, and the corresponding second electrode layer 133 above thereof together constitute an OLED device D.

Specifically, the specific process of forming the OLED layer 130 in the step S1 is: forming a first electrode layer 131 on the TFT layer 120, and forming a pixel defining layer 135 on the TFT layer 120 and the first electrode layer 131. An organic functional layer 132 is formed in the plurality of pixel openings 138 of the pixel defining layer 135, and a second electrode layer 133 is formed on the pixel defining layer 135 and the organic functional layer 132.

Specifically, in the OLED layer 130 formed in the step S1, the first electrode layer 131 and the second electrode layer 133 are respectively used as an anode (Anode) and a cathode (Cathode) of the OLED device D, and the first electrode layer 131 is a laminated material of a transparent indium tin oxide layer/silver layer/indium tin oxide layer (ITO/Ag/ITO).

Specifically, the organic functional layer 132 includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from bottom to top.

Specifically, the step S1 further includes forming an encapsulation layer (not shown) on the OLED layer 130 after the OLED layer 130 is formed to encapsulate the OLED layer 130.

Specifically, the encapsulation layer is a thin film encapsulation structure including an inorganic barrier layer and an organic buffer layer disposed in a stack.

Step S2, as shown in FIG. 4, the flexible base substrate 110 is subjected to laser lift-off using a laser having a wavelength of 308 nm, and the flexible base substrate 110 is peeled off from the glass substrate 500.

Specifically, since the glass substrate 500 is a highly translucent substrate, the transmittance of the laser light having a wavelength of 308 nm is 96% or more. Therefore, in the step S2, the lower energy is used in comparison with the prior art. The laser, specifically a laser of 400-430 mj energy, can peel the flexible substrate 110 from the glass substrate 500.

In the method for fabricating the flexible OLED panel of the present invention, the flexible substrate substrate 110 is formed by coating on the highly transparent glass substrate 500, and the transmittance of the glass substrate 500 to the laser light having a wavelength of 308 nm is 96% or more. When the flexible substrate 110 is peeled off from the glass substrate 500 by the 308 nm laser lift-off technique, most of the laser light can be transmitted through the glass substrate 500, so that the flexible substrate 110 can be removed from the glass substrate 500 using lower energy. The upper portion is peeled off, thereby not affecting the performance of the flexible substrate 110 and the TFT layer 120 thereon, and normal TFT electrical properties can be obtained, and the product yield can be greatly improved.

In summary, the present invention provides a method for fabricating a flexible OLED panel by first coating a flexible substrate on a highly transparent glass substrate, and sequentially fabricating a TFT layer and an OLED layer on the flexible substrate. Finally, the flexible base substrate is laser-peeled by a laser to peel the flexible substrate from the glass substrate, and the laser substrate is transmitted through the laser. When the rate is 96% or more, when the flexible substrate is peeled off from the glass substrate by the laser lift-off technique, most of the laser light can be transmitted through the glass substrate, so that the flexible substrate can be made from the glass substrate with lower energy. The peeling down, without affecting the performance of the flexible substrate and the TFT layer, can obtain normal TFT electrical properties, and can greatly improve the product yield.

In the above, various other changes and modifications can be made in accordance with the technical solutions and technical concept of the present invention, and all such changes and modifications are within the scope of the claims of the present invention. .

Claims (15)

A method for manufacturing a flexible OLED panel includes the following steps: Step S1, providing a glass substrate, forming a flexible substrate on the glass substrate, forming a TFT layer on the flexible substrate, and forming an OLED layer on the TFT layer; Step S2, performing laser stripping on the flexible substrate by using a laser to peel off the flexible substrate from the glass substrate; The transmittance of the glass substrate to the laser light used in the step S2 is 96% or more. The method of fabricating a flexible OLED panel according to claim 1, wherein the flexible substrate formed in the step S1 is a polyimide substrate, and the specific forming process is: coating a coating on the glass substrate A layer of polyimide material is baked to obtain a flexible substrate of a polyimide material. The method of fabricating a flexible OLED panel according to claim 1, wherein the wavelength of the laser light used in the step S2 is 308 nm. The method of fabricating a flexible OLED panel according to claim 3, wherein the energy of the laser used in the step S2 is 400-430 mj. The method of fabricating a flexible OLED panel according to claim 1, wherein the TFT layer formed in the step S1 is used for driving the OLED layer, comprising a plurality of arrayed TFT devices, the TFT device It is a low temperature polysilicon type or a metal oxide type. The method of fabricating a flexible OLED panel according to claim 1, wherein the OLED layer formed in the step S1 comprises a first electrode layer disposed on the TFT layer, and disposed on the TFT layer and the first electrode. a pixel defining layer on the layer, an organic functional layer disposed on the first electrode layer, and a second electrode layer disposed on the pixel defining layer and the organic functional layer; The pixel defining layer encloses a plurality of pixel openings arranged in an array on the first electrode layer; the organic functional layer is disposed in the pixel opening; an organic functional layer in each pixel opening, and a corresponding lower portion thereof An electrode layer, and a corresponding second electrode layer thereon, together constitute an OLED device. The method of fabricating a flexible OLED panel according to claim 6, wherein the specific process of forming the OLED layer in the step S1 is: forming a first electrode layer on the TFT layer, and the TFT layer and the first electrode A pixel defining layer is formed on the layer, an organic functional layer is formed in the plurality of pixel openings of the pixel defining layer, and a second electrode layer is formed on the pixel defining layer and the organic functional layer. The method of fabricating a flexible OLED panel according to claim 6, wherein in the forming the OLED layer in the step S1, the first electrode layer and the second electrode layer are respectively used as an OLED device. The anode and the cathode, the first electrode layer is a laminate of an indium tin oxide layer/silver layer/indium tin oxide layer. The method of fabricating a flexible OLED panel according to claim 6, wherein the organic functional layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer disposed in sequence. The method of fabricating a flexible OLED panel according to claim 6, wherein the step S1 further comprises: after forming the OLED layer, forming an encapsulation layer on the OLED layer to encapsulate the OLED layer; The encapsulation layer is a thin film encapsulation structure including an inorganic barrier layer and an organic buffer layer disposed in a stack. A method for manufacturing a flexible OLED panel includes the following steps: Step S1, providing a glass substrate, forming a flexible substrate on the glass substrate, forming a TFT layer on the flexible substrate, and forming an OLED layer on the TFT layer; Step S2, performing laser stripping on the flexible substrate by using a laser to peel off the flexible substrate from the glass substrate; The transmittance of the glass substrate to the laser light used in the step S2 is 96% or more; The flexible substrate formed in the step S1 is a polyimide substrate, and the specific forming process is: coating a layer of polyimide material on the glass substrate, and baking the same. a flexible substrate of polyimide material; Wherein, the wavelength of the laser used in the step S2 is 308 nm; Wherein, the energy of the laser used in the step S2 is 400-430 mj; The TFT layer formed in the step S1 is used for driving the OLED layer, and comprises a plurality of arrayed TFT devices, wherein the TFT device is a low temperature polysilicon type or a metal oxide type; The OLED layer formed in the step S1 includes a first electrode layer disposed on the TFT layer, a pixel defining layer disposed on the TFT layer and the first electrode layer, and disposed on the first electrode layer. An organic functional layer, and a second electrode layer disposed on the pixel defining layer and the organic functional layer; The pixel defining layer encloses a plurality of pixel openings arranged in an array on the first electrode layer; the organic functional layer is disposed in the pixel opening; an organic functional layer in each pixel opening, and a corresponding lower portion thereof An electrode layer, and a corresponding second electrode layer thereon, together constitute an OLED device. The method of fabricating a flexible OLED panel according to claim 11, wherein the specific process of forming the OLED layer in the step S1 is: forming a first electrode layer on the TFT layer, and the TFT layer and the first electrode A pixel defining layer is formed on the layer, an organic functional layer is formed in the plurality of pixel openings of the pixel defining layer, and a second electrode layer is formed on the pixel defining layer and the organic functional layer. The method of fabricating a flexible OLED panel according to claim 11, wherein in the forming an OLED layer in step S1, the first electrode layer and the second electrode layer are respectively used as an anode and a cathode of an OLED device, One electrode layer is a laminate of an indium tin oxide layer/silver layer/indium tin oxide layer. The method of fabricating a flexible OLED panel according to claim 11, wherein the organic functional layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are sequentially disposed. The method of fabricating a flexible OLED panel according to claim 11, wherein the step S1 further comprises: after forming the OLED layer, forming an encapsulation layer on the OLED layer to encapsulate the OLED layer; The encapsulation layer is a thin film encapsulation structure including an inorganic barrier layer and an organic buffer layer disposed in a stack.

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