WO2019042151A1 - Colour film sheet and fabricating method therefor, colour film substrate, and display apparatus - Google Patents
Colour film sheet and fabricating method therefor, colour film substrate, and display apparatus Download PDFInfo
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- WO2019042151A1 WO2019042151A1 PCT/CN2018/100941 CN2018100941W WO2019042151A1 WO 2019042151 A1 WO2019042151 A1 WO 2019042151A1 CN 2018100941 W CN2018100941 W CN 2018100941W WO 2019042151 A1 WO2019042151 A1 WO 2019042151A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/206—Filters comprising particles embedded in a solid matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01791—Quantum boxes or quantum dots
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/02—Frequency-changing of light, e.g. by quantum counters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
Definitions
- Embodiments of the present disclosure relate to a color film sheet, a method of fabricating a color film sheet, a color film substrate, and a display device.
- the liquid crystal display device may include a backlight module, an array substrate, a color filter substrate, and a liquid crystal layer between the array substrate and the color filter substrate.
- the white light emitted by the backlight module passes through the color filter on the color filter substrate to display various colors.
- Quantum Dots are nanoparticles composed of Group II-VI or Group III-V elements.
- the quantum dot particle size is generally between 1 and 20 nm. Since the electrons and holes are quantum confined, the continuous band structure becomes a discrete energy level structure with molecular characteristics, and can be excited after being excited.
- the emission spectrum of a quantum dot can be controlled by changing the size of the quantum dot. By changing the size of the quantum dot and its chemical composition, its emission spectrum can cover the entire visible region. Therefore, a quantum dot color film can be produced by utilizing the light-emitting characteristics of quantum dots.
- At least one embodiment of the present disclosure provides a color filter film including: a first quantum dot light emitting layer having a light incident surface; and a first reflective layer located at the first quantum dot light emitting layer away from the light incident surface a first quantum dot luminescent layer comprising a plurality of first quantum dots, the first quantum dots being configured to emit light of a second wavelength after being excited by light of a first wavelength from the light incident surface
- the first reflective layer is configured to transmit light of the second wavelength and reflect light of the first wavelength.
- a color film provided by an embodiment of the present disclosure further includes: a second quantum dot emitting layer between the first quantum dot emitting layer and the first reflective layer, wherein the second quantum dot emitting layer comprises a plurality of second quantum dots and a plurality of light absorbing materials configured to emit light of a second wavelength after being excited by light of a first wavelength from the light incident surface, the light absorbing material being Light is configured to absorb the first wavelength.
- a color film provided by an embodiment of the present disclosure further includes: a second reflective layer located on a side of the light incident surface of the first quantum dot light emitting layer, the second reflective layer being configured to transmit The light of the first wavelength reflects light of the second wavelength.
- the light of the first wavelength is blue light
- the light of the second wavelength is red light or green light
- the first reflective layer includes a plurality of first sub-reflective layers disposed in sequence, and each of the first sub-reflective layers includes a surface from the light incident surface.
- a first refractive index layer and a second refractive index layer are sequentially disposed in a direction of the first reflective layer, and a refractive index of the first refractive index layer is greater than a refractive index of the second refractive index.
- the first quantum dot light emitting layer and the second quantum dot light emitting layer are disposed in contact with each other.
- the second reflective layer includes a plurality of second sub-reflective layers disposed in sequence, and each of the second sub-reflective layers includes a surface from the light incident surface.
- a third refractive index layer and a fourth refractive index layer are sequentially disposed in a direction of the first reflective layer, and a refractive index of the third refractive index layer is smaller than a refractive index of the fourth refractive index layer.
- the thickness of the first reflective layer ranges from 400 to 600 nm.
- the first quantum dot has a particle diameter ranging from 7 to 10 nm.
- At least one embodiment of the present disclosure provides a color filter substrate comprising the color film of any of the above.
- a color filter substrate provided by an embodiment of the present disclosure further includes: a blue filter region configured to transmit light of the first wavelength.
- At least one embodiment of the present disclosure provides a display device comprising the color film of any of the above.
- At least one embodiment of the present disclosure provides a method of fabricating a color filter sheet, comprising: mixing a plurality of first quantum dots into a first organic solvent to form a first light emitting layer material; forming the first light emitting layer material using the first light emitting layer material a first quantum dot luminescent layer, the first quantum dot illuminating having a light incident surface, the first quantum dot being configured to emit light of a second wavelength after being excited by light of a first wavelength; and at the first A side of the quantum dot luminescent layer away from the light incident surface forms a first reflective layer, the first reflective layer being configured to transmit light of the second wavelength and reflect light of the first wavelength.
- a method for fabricating a color filter further includes: mixing a plurality of second quantum dots and a light absorbing material into a second organic solvent to form a second luminescent layer material, wherein the second quantum dot is Configuring to emit light of a second wavelength after being excited by light of a first wavelength, the light absorbing material being configured to absorb light of the first wavelength; and using the second luminescent layer material at the first quantum dot A second quantum dot luminescent layer is formed between the luminescent layer and the first reflective layer.
- a ratio of a mass percentage of the second quantum dot to a mass percentage of the light absorbing material in the second luminescent layer material is in a range of 1 -2.
- the method for fabricating a color film according to an embodiment of the present disclosure further includes: forming a second reflective layer on a side of the first quantum dot where the light incident surface is located, the second reflective layer being configured to Transmitting the light of the first wavelength and reflecting the light of the second wavelength.
- the first light-emitting layer material further includes a resin, a photoinitiator, and an additive, wherein the first quantum dot in the first light-emitting layer material
- the total mass percentage of the resin, the photoinitiator, and the additive ranges from 15% to 30%.
- the mass percentage of the first quantum dot ranges from 5% to 10%, and the quality of the resin The percentages range from 5% to 25%.
- Figure 1 is a schematic view showing the structure of a color film
- FIG. 2 is a schematic structural diagram of a color film according to an embodiment of the present disclosure
- FIG. 3 is a schematic structural diagram of another color film according to an embodiment of the present disclosure.
- FIG. 4 is a schematic structural diagram of another color film according to an embodiment of the present disclosure.
- FIG. 5 is a schematic structural diagram of another color film according to an embodiment of the present disclosure.
- FIG. 6 is a schematic structural diagram of another color film according to an embodiment of the present disclosure.
- FIG. 7 is a schematic plan view of a color filter substrate according to an embodiment of the present disclosure.
- FIG. 8 is a flowchart of a method for fabricating a color film according to an embodiment of the present disclosure.
- quantum dots can be added to the photoresist instead of the dye due to its photoluminescence and half-width narrowness.
- the solvent system of the photoresist is generally propylene glycol methyl ether acetate (PGMEA), PGMEA is a very polar organic solvent, and the ligands of general quantum dot materials are mostly non-polar ligands such as oleic acid;
- PGMEA propylene glycol methyl ether acetate
- the ligands of general quantum dot materials are mostly non-polar ligands such as oleic acid;
- it is necessary to replace the ligand of the quantum dot with a polar ligand but the general polar ligand has a relatively short chain length, and there is a quantum dot agglomeration, a quantum dot doping concentration, and the like.
- the quantum dots may also react with photoinitiators or other additives in the photoresist, and when the concentration of the equivalent sub-dots is high, agglomeration and quenching of the quantum dots are liable to occur. Therefore, the concentration of quantum dots in the photoresist is not too high, and when the concentration of the quantum dots is low, a small amount of excitation light is easily leaked, thereby affecting color purity.
- FIG. 1 is a schematic view showing the structure of a color film.
- the color filter sheet includes a base substrate 101, a quantum dot light emitting layer 110 on the base substrate 101, and a cover layer 190 on a side of the quantum dot light emitting layer 110 away from the base substrate 101.
- the quantum dot light-emitting layer 110 has a light incident surface 111 on a side close to the cover layer 190.
- the quantum dot light-emitting layer 110 includes a plurality of quantum dots 115 which are excited by blue light incident from the light incident surface 111 and emit red or green light.
- the quantum dot concentration in the quantum dot light-emitting layer 110 is not too high, the blue light cannot be completely converted into red light or green light, thereby causing partial blue light leakage, thereby affecting the color purity of the color filter film.
- Embodiments of the present disclosure provide a color film sheet, a method for fabricating a color film sheet, a color film substrate, and a display device.
- the color filter film includes a first quantum dot light emitting layer and a first reflective layer.
- the first quantum dot emitting layer has a light incident surface; the first reflective layer is located on a side of the first quantum dot emitting layer away from the light incident surface, and the first quantum dot emitting layer includes a plurality of first quantum dots, and the first quantum dot is
- the second reflective layer is configured to emit light of a second wavelength and to reflect light of the first wavelength, after being excited by light of a first wavelength from the light incident surface.
- the light of the first wavelength incident from the light incident surface can excite the first quantum dot in the first quantum dot emitting layer to emit light of the second wavelength, and the light of the second wavelength is emitted through the first reflective layer, not being
- the first wavelength of light converted by the first quantum dot in a quantum dot luminescent layer is reflected by the first reflective layer and cannot be emitted through the first reflective layer, so that the color purity of the light output of the color filter is high.
- FIG. 2 is a schematic structural view of a color filter according to the embodiment.
- the color filter sheet 100 includes a first quantum dot light emitting layer 110 and a first reflective layer 130.
- the first quantum dot luminescent layer 110 has a light incident surface 111; the first quantum dot luminescent layer 110 includes a plurality of first quantum dots 115, and the first quantum dots 115 can receive light of a first wavelength from the light incident surface 111 (eg, The solid line in Fig. 2) emits light of a second wavelength (shown by a broken line in Fig. 2) after excitation, so that the color filter can emit light of a second wavelength.
- the first reflective layer 130 is located on a side of the first quantum dot light emitting layer 110 away from the light incident surface 111, and is capable of transmitting light of the second wavelength and reflecting light of the first wavelength.
- first wavelength and second wavelength may not only represent specific wavelength values, but also represent wavelength ranges; for example, the first wavelength of light may be blue light, and the second wavelength of light may be red or green.
- Light It should be noted that the light of the first wavelength includes but is not limited to blue light, and the light of the second wavelength includes and is not limited to red light. Additionally, light of the first wavelength can be provided by a backlight.
- the first reflective layer 130 located on the side of the first quantum dot light-emitting layer 110 away from the light incident surface 111 can transmit light of the second wavelength and reflect the light of the first wavelength.
- the first reflective layer 130 can prevent the first wavelength of light not converted by the first quantum dot 115 from being emitted from the first reflective layer 130, thereby improving the light color purity of the color filter.
- the light of the first wavelength is blue light and the light of the second wavelength is red light, as shown in FIG. 2, a part of the blue light enters the first quantum dot light emitting layer 110 from the light incident surface 111 of the first quantum dot light emitting layer 110.
- the first quantum dot 115 Exciting the first quantum dot 115 to emit red light, part of the red light is emitted from the first reflective layer 130; due to the concentration of the first quantum dot 115 in the first quantum dot emitting layer 110 is not high, part of the blue light is not the first The quantum dots 115 are converted, and the blue light not converted by the first quantum dots 115 is reflected by the first reflective layer 130 and cannot be emitted from the first reflective layer 130, thereby improving the red color purity of the color filter.
- the thickness of the first reflective layer is 400-600 nm.
- the thickness of the first reflective layer ranges from 400 to 600 nm, it has both a higher reflectance for light of the first wavelength and a higher transmittance for light of the second wavelength.
- the color filter sheet 100 further includes a base substrate 101 on a side of the first reflective layer 130 away from the light incident surface 111 to support the first quantum dot light emitting layer 110 and the first reflection.
- the base substrate 101 may be a glass substrate.
- the color filter sheet 100 further includes a cover layer 190 on a side where the light incident surface 111 of the first quantum dot light emitting layer 110 is located to protect the first quantum dot light emitting layer 110 described above.
- the material of the first quantum dot may be selected from Group II-VI CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, and III-V GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP. , InSb, AlAs, AlP, AlSb and other materials.
- the emission wavelength or wavelength band of the quantum dot can be controlled by controlling the particle diameter of the first quantum dot.
- the size of the first quantum dot is mainly 9-10 nm, and red light can be emitted.
- the size of the first quantum dot is mainly at 7 nm, green light can be emitted.
- Figure 3 is a schematic view showing the structure of another color film.
- the color filter film further includes a second quantum dot light emitting layer 120 between the first quantum dot light emitting layer 110 and the first reflective layer 130.
- the second quantum dot light emitting layer 120 includes a plurality of second quantum dots 125 and a plurality of light absorbing materials 127.
- the second quantum dot 125 may be excited by light of a first wavelength (shown by a solid line in FIG. 3) from the light incident surface 111 to emit light of a second wavelength (as indicated by a broken line in FIG. 3), and the light absorbing material 127 Light of the first wavelength can be absorbed.
- the color filter may be first converted by the second quantum dot 125 in the second quantum dot luminescent layer 120 that is not disposed by the first quantum dot 115 in the first quantum dot luminescent layer 110.
- the light of the wavelength is converted into light of the second wavelength, thereby further improving the utilization efficiency of the light of the first wavelength from the light incident surface 111, and reducing the light of the first wavelength directed to the first reflective layer 130;
- the color filter sheet can absorb light of the first wavelength that is not converted by the first quantum dot 115 in the first quantum dot light-emitting layer 110 by the light absorbing material 127 in the second quantum dot light-emitting layer 120 additionally disposed, thereby further reducing Light of a first wavelength that is directed toward the first reflective layer 130.
- the color filter sheet further improves the color purity of the light emitted, and improves the utilization efficiency of light of the first wavelength from the light incident surface.
- the size of the light absorbing material is on the order of magnitude of the second quantum dot, thereby facilitating a more even distribution of the two, preventing buildup and the like.
- the light absorbing material is a dye that absorbs light of a first wavelength.
- the disclosure includes but is not limited thereto.
- the second quantum dot material may be selected from the group II-VI CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, and III-V GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP. , InSb, AlAs, AlP, AlSb and other materials. It should be noted that the material of the second quantum dot may be the same as the material of the first quantum dot.
- the emission wavelength or wavelength band of the quantum dot can be controlled by controlling the particle diameter of the second quantum dot.
- the size of the second quantum dot is mainly at 9-10 nm, and red light can be emitted.
- the size of the second quantum dot is mainly at 7 nm, green light can be emitted.
- Figure 4 is a schematic view showing the structure of another color film.
- the color filter film further includes a second reflective layer 140 on a side where the light incident surface 111 of the first quantum dot light emitting layer 110 is located.
- the second reflective layer 140 can transmit light of a first wavelength (as shown by the solid line in FIG. 4) and reflect light of a second wavelength (as indicated by a broken line in FIG. 4).
- the first quantum dot or the second quantum dot is excited by the light of the first wavelength, the second wavelength of light is emitted to all around, and the light incident surface of the first quantum dot emitting layer 110 is located.
- the second reflective layer 140 on the side where the 111 is located can reflect the light that is incident on the second reflective layer 140 to a direction away from the light incident surface 111, and finally is emitted from the first reflective layer 130, reducing the loss of light of the second wavelength. , greatly improving the conversion efficiency of the color film to the first wavelength of light.
- the second reflective layer can also be designed using the principle of an anti-reflection film to increase the transmittance of light at the first wavelength.
- first reflective layer and the second reflective layer in this embodiment can be realized by a structure composed of a high refractive index layer and a low refractive index layer.
- FIG. 5 is a schematic structural view of another color film.
- the first reflective layer 130 includes a plurality of first sub-reflective layers 1300 disposed in sequence, and each of the first sub-reflective layers 1300 includes a first step disposed in a direction from the light incident surface 111 to the first reflective layer 130.
- the refractive index layer 131 and the second refractive index layer 132 have a refractive index greater than that of the second refractive index 132.
- the optical thicknesses of the first and second refractive index layers can be set by the principle of Bragg reflection to achieve transmission of light of the second wavelength and reflection of light of the first wavelength.
- FIG. 6 is a schematic structural view of another color film.
- the second reflective layer 140 includes a plurality of second sub-reflective layers 1400 disposed in sequence, and each of the second sub-reflective layers 1400 includes a first step disposed in a direction from the light incident surface 111 to the first reflective layer 130 .
- the refractive index of the third refractive index layer 141 and the fourth refractive index layer 141 is smaller than the refractive index of the fourth refractive index layer 142.
- the light of the first wavelength propagates from the third refractive index layer 141 having a smaller refractive index to the fourth refractive index layer 142 having a larger refractive index, and the light of the second wavelength has a larger refractive index.
- the fourth refractive index layer 142 propagates toward the third refractive index layer 141 having a smaller refractive index, whereby the optical thicknesses of the third refractive index layer and the fourth refractive index layer can be set by the principle of the antireflection film to achieve the Transmission of light of one wavelength and increasing the transmittance of light of the first wavelength, and also setting the optical thickness of the third refractive index layer and the fourth refractive index layer by the principle of Bragg reflection to achieve light of the second wavelength reflection. It should be noted that the optical thickness of the third refractive index layer and the fourth refractive index layer can be set by computer simulation to simultaneously transmit light of the first wavelength and reflect light of the second wavelength.
- the specific optical thicknesses of the first refractive index layer, the second refractive index layer, the third refractive index layer, and the fourth refractive index layer can be obtained by calculation and simulation.
- the thickness of the second reflective layer is 400-600 nm.
- the thickness of the second reflective layer ranges from 400 to 600 nm, it has both a higher transmittance for light of the first wavelength and a higher reflectance for light of the second wavelength.
- the material of the first refractive index layer and the second refractive index layer may be titanium oxide and silicon oxide (TiO 2 /SiO 2 ) or zirconia and magnesium fluoride (ZrO 2 /MgF 2 ).
- TiO 2 /SiO 2 titanium oxide and silicon oxide
- ZrO 2 /MgF 2 zirconia and magnesium fluoride
- the present disclosure includes but is not limited thereto, and the first refractive index layer and the second refractive index layer may also be made of other materials.
- the materials of the third refractive index layer and the fourth refractive index layer may be silicon oxide and titanium oxide (SiO 2 /TiO 2 ) or magnesium fluoride and zirconium oxide (MgF 2 /ZrO 2 ).
- the present disclosure includes but is not limited thereto, and the third refractive index layer and the fourth refractive index layer may also be fabricated using other materials.
- the light of the first wavelength is blue light
- the light of the second wavelength is red light or green light
- the light of the first wavelength may also be other light, for example, violet light, ultraviolet light, etc.
- the light of the second wavelength may also be yellow light or the like; the disclosure includes but is not limited thereto.
- a side of the base substrate 101 away from the first quantum dot light emitting layer 110 may be provided with a microlens structure 109 to control the light exiting range of the emitted second wavelength light.
- the above-described microlens structure can be formed by surface-treating the surface of the substrate on the side away from the first quantum dot light-emitting layer.
- An embodiment of the present disclosure provides a color film substrate.
- 7 is a schematic plan view of a color filter substrate.
- the color filter substrate includes the color film described in any of the above examples.
- the color film substrate has a higher color purity, and the color gamut of the display device using the color film substrate can be improved, so that the display device using the color film substrate has better picture quality.
- the color filter sheet 100 may include a red color film sheet 1101 and a green color film sheet 1102.
- the red color film 1101 can be used as a red color filter
- the green color film 1102 can be used as a green color filter.
- the first quantum dot and the second quantum dot may be excited to emit red light; in the green color film 1102, the first quantum dot and the second quantum dot may be stimulated to emit green light.
- the color filter substrate further includes a blue filter region that is permeable to blue light.
- the color film substrate described above can be used in a display device in which the backlight is blue light. It should be noted that when the backlight is blue light, the region corresponding to the blue color filter on the color filter substrate, that is, the blue filter region, may be set to be transparent, and no quantum dot light emitting layer is disposed as the blue color filter. .
- the color filter substrate further includes a black matrix 200 surrounding the color filter sheet 100.
- An embodiment of the present disclosure further provides a display panel including the color film substrate described in any of the above examples.
- each sub-pixel in the display panel has a higher color purity, so that the color gamut of the display device can be improved, thereby making the display panel have better picture quality.
- the display panel further includes an array substrate disposed opposite to the color filter substrate; and a liquid crystal layer disposed between the array substrate and the color filter substrate.
- An embodiment of the present disclosure further provides a display device comprising the color film described in any of the above examples.
- each sub-pixel in the display device has a higher color purity, so that the color gamut of the display device can be improved, thereby making the display device have better picture quality.
- the display device may be any electronic product having a display function such as a mobile phone, a computer, a television, a notebook computer, a navigator, a wearable display device, or the like.
- the display device may be a liquid crystal display device or an organic light emitting diode display device; the disclosure is not limited herein.
- FIG. 8 is a flow chart of a method of fabricating a color film. As shown in FIG. 8, the method for fabricating the color film includes steps S401-S403.
- Step S401 mixing a plurality of first quantum dots into the first organic solvent to form a first luminescent layer material.
- the organic solvent may be propylene glycol methyl ether acetate (PGMEA).
- PGMEA propylene glycol methyl ether acetate
- Step S402 forming a first quantum dot luminescent layer using the first luminescent layer material, the first quantum dot illuminating light has a light incident surface, and the first quantum dot is configured to be excited by the light of the first wavelength from the light incident surface. Two wavelengths of light.
- the film layer of the first quantum dot material may be formed first, and then the first quantum dot light emitting layer is formed by a photolithography process, so that the forming step of the first quantum dot layer is relatively simple and the cost is low.
- the present disclosure includes but is not limited thereto, and the first quantum dot light-emitting layer may be formed using the first light-emitting layer material by an inkjet printing process. It should be noted that when the inkjet printing process is employed, the film thickness can be adjusted by adjusting the number of printings, the number of printing drops, and the droplet size.
- Step S403 forming a first reflective layer on a side of the first quantum dot light emitting layer away from the light incident surface, the first reflective layer being configured to transmit the light of the second wavelength and reflect the light of the first wavelength.
- the reflective layer can be formed by a sputtering method such as sputter, vacuum evaporation, or ALD.
- the first reflective layer located on the side of the first quantum dot emitting layer away from the light incident surface can transmit the light of the second wavelength and reflect the light of the first wavelength.
- the first reflective layer can prevent the light of the first wavelength not converted by the first quantum dot from being emitted from the first reflective layer, thereby improving the color purity of the color of the color filter.
- the method of fabricating the color filter further comprises: mixing a plurality of second quantum dots, a light absorbing material into the second organic solvent to form a second luminescent layer material, and the second quantum dot is configured to The light absorbing material emitting the second wavelength after being excited by the light of the first wavelength from the light incident surface is configured to absorb the light of the first wavelength; and the luminescent layer and the first reflection of the first quantum dot using the second luminescent layer material A second quantum dot luminescent layer is formed between the layers.
- light of a first wavelength that is not converted by the first quantum dot in the first quantum dot luminescent layer can be converted to a second wavelength by a second quantum dot in the second quantum dot luminescent layer that is additionally disposed Light, thereby further improving the utilization efficiency of light of the first wavelength from the light incident surface, reducing the light of the first wavelength directed to the first reflective layer; on the other hand, illuminating by the second quantum dot additionally provided
- the light absorbing material in the layer absorbs light of a first wavelength that is not converted by the first quantum dot in the first quantum dot luminescent layer, thereby further reducing light of the first wavelength that is directed toward the first reflective layer.
- the method of producing the color filter sheet further improves the color purity of the light emitted, and improves the utilization efficiency of light of the first wavelength from the light incident surface.
- the first organic solvent is immiscible with the second organic solvent, thereby preventing the second organic solvent from dissolving the first quantum dot luminescent layer when the second quantum dot photoresist is formed.
- the multilayer film may be spin-coated according to the characteristics of immiscibility of the first solvent and the second solvent to achieve the purpose of thickening the thickness of the first quantum dot emitting layer or the second quantum dot emitting layer.
- the first quantum dot luminescent layer may have a thickness ranging from 1 to 3 um; and the second quantum dot luminescent layer may have a thickness ranging from 1 to 3 um.
- the ratio of the mass percentage of the second quantum dot to the mass percentage of the light absorbing material in the second luminescent layer material is in the range of 1-2, thereby efficiently absorbing or converting the first wavelength of light, preventing the first A wavelength of light leaks.
- the ratio of the mass percentage of the second quantum dot to the mass percentage of the light absorbing material in the second luminescent layer material is 3:2, thereby maximally absorbing or converting the first wavelength of light, preventing the first Light leakage at the wavelength.
- the method of fabricating the color filter film further includes: forming a second reflective layer on a side of the light incident surface of the first quantum dot light emitting layer, the second reflective layer transmitting light of the first wavelength and reflecting Two wavelengths of light. After the first quantum dot or the second quantum dot is excited by the light of the first wavelength, the second wavelength of light is emitted to all around, and the second light is located on the side of the light incident surface of the first quantum dot emitting layer.
- the reflective layer can reflect the light that is incident on the second reflective layer to a direction away from the light incident surface, and finally emits from the first reflective layer, reducing the loss of light of the second wavelength, and greatly improving the first wavelength of the color filter. The conversion efficiency of light.
- the second reflective layer can also be designed using the principle of an anti-reflection film to increase the transmittance of light at the first wavelength.
- the first luminescent layer material further includes a resin, a photoinitiator, and an additive.
- the first light-reflecting layer material can be adapted to a photolithography process by controlling the total mass percentage of the first quantum dots, the resin, the photoinitiator, and the additive to a range of 15% to 30%, thereby simplifying the color filter film Production method.
- the first luminescent layer material provided by the present example can be compatible with methods such as photolithography, inkjet printing, and the like.
- the optical density value of the photolithography process may range from 1.5 to 2.5.
- the photolithography process can have an optical density value in the range of two.
- the second luminescent layer material can also include a resin, a photoinitiator, and an additive.
- the second luminescent layer material can also be adapted to the lithography process by controlling the total mass percentage of the second quantum dots, the light absorbing material, the resin, the photoinitiator, and the additive to be in the range of 15% to 30%. Thereby, the method of fabricating the color film can be simplified.
- additives are materials commonly used in photoresists for adjusting the viscosity and surface tension of photoresists.
- the total mass percentage of the first quantum dot, resin, photoinitiator, and additive can be controlled to 20%.
- the first luminescent layer material is suitable for a photolithography process, thereby simplifying the method of fabricating the color film.
- the mass percentage of the first quantum dot can be adjusted to 5%-10%, and the mass percentage of the resin can be adjusted from 5% to 25%.
- the first luminescent layer material can also be adapted to a photolithography process, thereby simplifying the method of fabricating the color film.
- the mass percentage of the first quantum dot can be adjusted to 5% and the mass percentage of the resin adjusted to 10%.
- the first luminescent layer material can also be adapted to a photolithography process, thereby simplifying the method of fabricating the color film.
- the method for fabricating the color film further comprises performing exposure development on the first quantum dot luminescent layer and the second quantum dot luminescent layer, respectively, thereby obtaining a patterned first quantum dot luminescent layer and a second quantum. Point light layer.
- the baking temperature in the photolithography process needs to be controlled below 150 ° C to prevent high temperature quenching of the quantum dots.
- the method of fabricating the color film further comprises: providing a substrate.
- the manufacturing method of the color film sheet may be: forming a first reflective layer on the base substrate, and then forming a second quantum dot light emitting layer on a side of the first reflective layer away from the base substrate, and The second quantum dot light-emitting layer is subjected to exposure and development to obtain a patterned second quantum dot light-emitting layer, and then a first quantum dot light-emitting layer is formed on a side of the second quantum dot light-emitting layer away from the substrate, and the first quantum dot is illuminated.
- the layer is subjected to exposure development to obtain a patterned first quantum dot light-emitting layer, and finally a second reflective layer and a cover layer (leveling layer) are formed.
- a patterned first quantum dot light-emitting layer and finally a second reflective layer and a cover layer (leveling layer) are formed.
- a cover layer leveling layer
- the method of fabricating the color filter film further comprises: surface-treating a surface of the substrate substrate away from the side of the first quantum dot light-emitting layer to form a microlens structure, thereby illuminating the second wavelength The light output range is controlled.
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Abstract
一种彩膜片、彩膜片的制作方法、彩膜基板和显示装置。该彩膜片包括第一量子点发光层(110)和第一反射层(130)。第一量子点发光层(110)具有一光入射面(111);第一反射层(130)位于第一量子点发光层(110)远离光入射面(111)的一侧,第一量子点发光层(110)包括多个第一量子点(115),第一量子点(115)被配置为受来自光入射面(111)的第一波长的光激发后发出第二波长的光,第一反射层(130)被配置为透射第二波长的光并反射第一波长的光。A color film, a method for manufacturing a color film, a color film substrate and a display device. The color filter film includes a first quantum dot light emitting layer (110) and a first reflective layer (130). The first quantum dot luminescent layer (110) has a light incident surface (111); the first reflective layer (130) is located on a side of the first quantum dot luminescent layer (110) away from the light incident surface (111), the first quantum dot The luminescent layer (110) includes a plurality of first quantum dots (115) configured to be excited by light of a first wavelength from the light incident surface (111) to emit light of a second wavelength, A reflective layer (130) is configured to transmit light of a second wavelength and to reflect light of a first wavelength.
Description
本申请要求于2017年8月30日递交的中国专利申请第201710764894.5号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。The present application claims the priority of the Chinese Patent Application No. JP-A No. No. No. No. No. No. No. No. No. No.
本公开的实施例涉及一种彩膜片、彩膜片的制作方法、彩膜基板和显示装置。Embodiments of the present disclosure relate to a color film sheet, a method of fabricating a color film sheet, a color film substrate, and a display device.
随着显示技术的不断发展,人们对于显示装置的画面质量(例如色域)的要求也越来越高。通常的显示装置需要通过彩膜来实现全彩显示。例如,液晶显示装置可包括背光模组、阵列基板、彩膜基板以及位于阵列基板和彩膜基板之间的液晶层。背光模组发出的白光通过彩膜基板上的彩色滤光片以显示出各种颜色。With the continuous development of display technology, people have higher and higher requirements for the picture quality (such as color gamut) of display devices. A typical display device requires a color film to achieve full color display. For example, the liquid crystal display device may include a backlight module, an array substrate, a color filter substrate, and a liquid crystal layer between the array substrate and the color filter substrate. The white light emitted by the backlight module passes through the color filter on the color filter substrate to display various colors.
通常的彩膜是将染料分散到负性光刻胶中,通过吸收掉其他波段的光,以显示纯色光(红光、绿光或蓝光)。然而,这种通过吸收其他波段的光来实现显示纯色光的彩膜大大地降低了对背光的利用率。量子点(Quantum Dots,QDs)是一种由II-VI族或III-V族元素组成的纳米颗粒。量子点的粒径一般介于1-20nm之间,由于电子和空穴被量子限域,连续的能带结构变成具有分子特性的分立能级结构,受激后可以发射荧光。量子点的发射光谱可以通过改变量子点的尺寸大小来控制。通过改变量子点的尺寸和它的化学组成可以使其发射光谱覆盖整个可见光区。因此,可利用量子点的发光特性制作量子点彩膜。The usual color film is to disperse the dye into a negative photoresist by absorbing other wavelengths of light to reveal pure color light (red, green or blue). However, such a color film that exhibits solid color light by absorbing light of other wavelength bands greatly reduces the utilization of the backlight. Quantum Dots (QDs) are nanoparticles composed of Group II-VI or Group III-V elements. The quantum dot particle size is generally between 1 and 20 nm. Since the electrons and holes are quantum confined, the continuous band structure becomes a discrete energy level structure with molecular characteristics, and can be excited after being excited. The emission spectrum of a quantum dot can be controlled by changing the size of the quantum dot. By changing the size of the quantum dot and its chemical composition, its emission spectrum can cover the entire visible region. Therefore, a quantum dot color film can be produced by utilizing the light-emitting characteristics of quantum dots.
发明内容Summary of the invention
本公开至少一个实施例提供一种彩膜片,其包括:第一量子点发光层,具有一光入射面;以及第一反射层,位于所述第一量子点发光层远离所述光入射面的一侧,所述第一量子点发光层包括多个第一量子点,所述第一量子点被配置为受来自所述光入射面的第一波长的光激发后发出第二波长的光,所述第一反射层被配置为透射所述第二波长的光并反射所述第一波长的光。At least one embodiment of the present disclosure provides a color filter film including: a first quantum dot light emitting layer having a light incident surface; and a first reflective layer located at the first quantum dot light emitting layer away from the light incident surface a first quantum dot luminescent layer comprising a plurality of first quantum dots, the first quantum dots being configured to emit light of a second wavelength after being excited by light of a first wavelength from the light incident surface The first reflective layer is configured to transmit light of the second wavelength and reflect light of the first wavelength.
例如,本公开一实施例提供的彩膜片还包括:第二量子点发光层,位于所述第一量子点发光层与所述第一反射层之间,所述第二量子点发光层包括多个第二量子点和多个光吸收材料,所述第二量子点被配置为受来自所述光入射面的第一波长的光激发后发出第二波长的光,所述光吸收材料被配置为吸收所述第一波长的光。For example, a color film provided by an embodiment of the present disclosure further includes: a second quantum dot emitting layer between the first quantum dot emitting layer and the first reflective layer, wherein the second quantum dot emitting layer comprises a plurality of second quantum dots and a plurality of light absorbing materials configured to emit light of a second wavelength after being excited by light of a first wavelength from the light incident surface, the light absorbing material being Light is configured to absorb the first wavelength.
例如,本公开一实施例提供的彩膜片还包括:第二反射层,位于所述第一量子点发光层的所述光入射面所在的一侧,所述第二反射层被配置为透射所述第一波长的光并反射所述第二波长的光。For example, a color film provided by an embodiment of the present disclosure further includes: a second reflective layer located on a side of the light incident surface of the first quantum dot light emitting layer, the second reflective layer being configured to transmit The light of the first wavelength reflects light of the second wavelength.
例如,在本公开一实施例提供的彩膜片中,所述第一波长的光为蓝光,所述第二波长的光为红光或绿光。For example, in the color film provided by an embodiment of the present disclosure, the light of the first wavelength is blue light, and the light of the second wavelength is red light or green light.
例如,在本公开一实施例提供的彩膜片中,所述第一反射层包括多个依次设置的第一子反射层,各所述第一子反射层包括沿从所述光入射面到所述第一反射层的方向依次设置的第一折射率层和第二折射率层,所述第一折射率层的折射率大于所述第二折射率的折射率。For example, in a color filter film according to an embodiment of the present disclosure, the first reflective layer includes a plurality of first sub-reflective layers disposed in sequence, and each of the first sub-reflective layers includes a surface from the light incident surface. a first refractive index layer and a second refractive index layer are sequentially disposed in a direction of the first reflective layer, and a refractive index of the first refractive index layer is greater than a refractive index of the second refractive index.
例如,在本公开一实施例提供的彩膜片中,所述第一量子点发光层和所述第二量子点发光层接触设置。For example, in a color film provided by an embodiment of the present disclosure, the first quantum dot light emitting layer and the second quantum dot light emitting layer are disposed in contact with each other.
例如,在本公开一实施例提供的彩膜片中,所述第二反射层包括多个依次设置的第二子反射层,各所述第二子反射层包括沿从所述光入射面到所述第一反射层的方向依次设置的第三折射率层和第四折射率层,所述第三折射率层的折射率小于所述第四折射率层的折射率。For example, in a color film provided by an embodiment of the present disclosure, the second reflective layer includes a plurality of second sub-reflective layers disposed in sequence, and each of the second sub-reflective layers includes a surface from the light incident surface. a third refractive index layer and a fourth refractive index layer are sequentially disposed in a direction of the first reflective layer, and a refractive index of the third refractive index layer is smaller than a refractive index of the fourth refractive index layer.
例如,在本公开一实施例提供的彩膜片中,所述第一反射层的厚度范围为400-600nm。For example, in the color film provided by an embodiment of the present disclosure, the thickness of the first reflective layer ranges from 400 to 600 nm.
例如,在本公开一实施例提供的彩膜片中,所述第一量子点的粒径范围为7-10nm。For example, in the color filter provided in an embodiment of the present disclosure, the first quantum dot has a particle diameter ranging from 7 to 10 nm.
本公开至少一个实施例提供一种彩膜基板,包括上述任一项所述的彩膜片。At least one embodiment of the present disclosure provides a color filter substrate comprising the color film of any of the above.
例如,本公开一实施例提供的彩膜基板还包括:蓝色滤光区域,所述蓝色滤光区域被配置为可透所述第一波长的光。For example, a color filter substrate provided by an embodiment of the present disclosure further includes: a blue filter region configured to transmit light of the first wavelength.
本公开至少一个实施例提供一种显示装置,包括上述任一项所述的彩膜片。At least one embodiment of the present disclosure provides a display device comprising the color film of any of the above.
本公开至少一个实施例提供一种彩膜片的制作方法,其包括:将多个第一 量子点混合到第一有机溶剂中以形成第一发光层材料;使用所述第一发光层材料形成第一量子点发光层,所述第一量子点发光具有一光入射面,所述第一量子点被配置为受第一波长的光激发后发出第二波长的光;以及在所述第一量子点发光层远离所述光入射面的一侧形成第一反射层,所述第一反射层被配置为透射所述第二波长的光并反射所述第一波长的光。At least one embodiment of the present disclosure provides a method of fabricating a color filter sheet, comprising: mixing a plurality of first quantum dots into a first organic solvent to form a first light emitting layer material; forming the first light emitting layer material using the first light emitting layer material a first quantum dot luminescent layer, the first quantum dot illuminating having a light incident surface, the first quantum dot being configured to emit light of a second wavelength after being excited by light of a first wavelength; and at the first A side of the quantum dot luminescent layer away from the light incident surface forms a first reflective layer, the first reflective layer being configured to transmit light of the second wavelength and reflect light of the first wavelength.
例如,本公开一实施例提供的彩膜片的制作方法还包括:将多个第二量子点和光吸收材料混合到第二有机溶剂中以形成第二发光层材料,所述第二量子点被配置为受第一波长的光激发后发出第二波长的光,所述光吸收材料被配置为吸收所述第一波长的光;以及使用所述第二发光层材料在所述第一量子点发光层与所述第一反射层之间形成第二量子点发光层。For example, a method for fabricating a color filter provided by an embodiment of the present disclosure further includes: mixing a plurality of second quantum dots and a light absorbing material into a second organic solvent to form a second luminescent layer material, wherein the second quantum dot is Configuring to emit light of a second wavelength after being excited by light of a first wavelength, the light absorbing material being configured to absorb light of the first wavelength; and using the second luminescent layer material at the first quantum dot A second quantum dot luminescent layer is formed between the luminescent layer and the first reflective layer.
例如,在本公开一实施例提供的彩膜片的制作方法中,所述第二发光层材料中所述第二量子点的质量百分数与所述光吸收材料的质量百分数之比的范围在1-2。For example, in the method for fabricating a color filter according to an embodiment of the present disclosure, a ratio of a mass percentage of the second quantum dot to a mass percentage of the light absorbing material in the second luminescent layer material is in a range of 1 -2.
例如,本公开一实施例提供的彩膜片的制作方法还包括:在所述第一量子点的所述光入射面所在的一侧形成第二反射层,所述第二反射层被配置为透射所述第一波长的光并反射所述第二波长的光。For example, the method for fabricating a color film according to an embodiment of the present disclosure further includes: forming a second reflective layer on a side of the first quantum dot where the light incident surface is located, the second reflective layer being configured to Transmitting the light of the first wavelength and reflecting the light of the second wavelength.
例如,在本公开一实施例提供的彩膜片的制作方法中,所述第一发光层材料还包括树脂、光引发剂和添加剂,所述第一发光层材料中,所述第一量子点、所述树脂、所述光引发剂和所述添加剂的总质量百分数的范围在15%-30%。For example, in a method for fabricating a color filter sheet according to an embodiment of the present disclosure, the first light-emitting layer material further includes a resin, a photoinitiator, and an additive, wherein the first quantum dot in the first light-emitting layer material The total mass percentage of the resin, the photoinitiator, and the additive ranges from 15% to 30%.
例如,在本公开一实施例提供的彩膜片的制作方法中,所述第一发光层材料中,所述第一量子点的质量百分数的范围在5%-10%,所述树脂的质量百分数的范围在5%-25%。For example, in the method for fabricating a color film according to an embodiment of the present disclosure, in the first luminescent layer material, the mass percentage of the first quantum dot ranges from 5% to 10%, and the quality of the resin The percentages range from 5% to 25%.
为了更清楚地说明发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及发明的一些实施例,而非对发明的限制。The drawings of the embodiments are briefly described in the following, and the drawings in the following description are merely referring to the embodiments of the invention, and are not intended to limit the invention.
图1为一种彩膜片的结构示意图;Figure 1 is a schematic view showing the structure of a color film;
图2为本公开一实施例提供的一种彩膜片的结构示意图;2 is a schematic structural diagram of a color film according to an embodiment of the present disclosure;
图3为本公开一实施例提供的另一种彩膜片的结构示意图;FIG. 3 is a schematic structural diagram of another color film according to an embodiment of the present disclosure;
图4为本公开一实施例提供的另一种彩膜片的结构示意图;4 is a schematic structural diagram of another color film according to an embodiment of the present disclosure;
图5为本公开一实施例提供的另一种彩膜片的结构示意图;FIG. 5 is a schematic structural diagram of another color film according to an embodiment of the present disclosure;
图6为本公开一实施例提供的另一种彩膜片的结构示意图;FIG. 6 is a schematic structural diagram of another color film according to an embodiment of the present disclosure;
图7为本公开一实施例提供的一种彩膜基板的平面示意图;以及FIG. 7 is a schematic plan view of a color filter substrate according to an embodiment of the present disclosure;
图8为本公开一实施例提供的一种彩膜片的制作方法的流程图。FIG. 8 is a flowchart of a method for fabricating a color film according to an embodiment of the present disclosure.
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部的实施例。基于所描述的本公开的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. It is apparent that the described embodiments are part of the embodiments of the present disclosure, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present disclosure without departing from the scope of the invention are within the scope of the disclosure.
除非另外定义,本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。Unless otherwise defined, technical terms or scientific terms used in the present disclosure are intended to be understood in the ordinary meaning of the ordinary skill of the art. The words "first," "second," and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The word "comprising" or "comprises" or the like means that the element or item preceding the word is intended to be in the The words "connected" or "connected" and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
在量子点彩膜中,量子点由于其光致发光、半峰宽窄等特点,可代替染料添加到光刻胶中。光刻胶的溶剂体系一般为丙二醇甲醚醋酸酯(PGMEA),PGMEA是一种极性很强的有机溶剂,而一般的量子点材料的配体多为油酸等非极性配体;因此在这种量子点光刻胶中,需要将量子点的配体换成极性配体,但一般的极性配体链长都比较短,会存在量子点团聚、量子点掺杂浓度低等问题;另外,量子点还可能和光刻胶内的光引发剂或其它添加剂产生反应,当量子点的浓度较高时,容易引起量子点的团聚和猝灭。因此,光刻胶内的量子点浓度不会太高,而量子点浓度较低时,容易导致少量的激发光泄露,从而影响色纯度。In the quantum dot color film, quantum dots can be added to the photoresist instead of the dye due to its photoluminescence and half-width narrowness. The solvent system of the photoresist is generally propylene glycol methyl ether acetate (PGMEA), PGMEA is a very polar organic solvent, and the ligands of general quantum dot materials are mostly non-polar ligands such as oleic acid; In such a quantum dot photoresist, it is necessary to replace the ligand of the quantum dot with a polar ligand, but the general polar ligand has a relatively short chain length, and there is a quantum dot agglomeration, a quantum dot doping concentration, and the like. In addition, the quantum dots may also react with photoinitiators or other additives in the photoresist, and when the concentration of the equivalent sub-dots is high, agglomeration and quenching of the quantum dots are liable to occur. Therefore, the concentration of quantum dots in the photoresist is not too high, and when the concentration of the quantum dots is low, a small amount of excitation light is easily leaked, thereby affecting color purity.
图1为一种彩膜片的结构示意图。如图1所示,该彩膜片包括衬底基板101、位于衬底基板101上的量子点发光层110和位于量子点发光层110远离衬底基板101的一侧的覆盖层190。量子点发光层110在靠近覆盖层190的一侧具有一光入射面111。量子点发光层110包括多个量子点115,量子点115可被从 光入射面111入射的蓝光激发,并发出红光或绿光。然而,由于量子点发光层110中量子点浓度不会太高,不能将蓝光完全转化为红光或绿光,从而导致部分蓝光泄露,从而影响该彩膜片的色纯度。Figure 1 is a schematic view showing the structure of a color film. As shown in FIG. 1, the color filter sheet includes a
本公开实施例提供一种彩膜片、彩膜片的制作方法、彩膜基板和显示装置。该彩膜片包括第一量子点发光层和第一反射层。第一量子点发光层具有一光入射面;第一反射层位于第一量子点发光层远离光入射面的一侧,第一量子点发光层包括多个第一量子点,第一量子点被配置为受来自光入射面的第一波长的光激发后发出第二波长的光,第一反射层被配置为透射第二波长的光并反射第一波长的光。由此,从光入射面入射的第一波长的光可激发第一量子点发光层中的第一量子点发出第二波长的光,第二波长的光通过第一反射层射出,未被第一量子点发光层中的第一量子点转化的第一波长的光被第一反射层反射,不能通过第一反射层射出,从而使得该彩膜片的出光的色纯度较高。Embodiments of the present disclosure provide a color film sheet, a method for fabricating a color film sheet, a color film substrate, and a display device. The color filter film includes a first quantum dot light emitting layer and a first reflective layer. The first quantum dot emitting layer has a light incident surface; the first reflective layer is located on a side of the first quantum dot emitting layer away from the light incident surface, and the first quantum dot emitting layer includes a plurality of first quantum dots, and the first quantum dot is The second reflective layer is configured to emit light of a second wavelength and to reflect light of the first wavelength, after being excited by light of a first wavelength from the light incident surface. Thereby, the light of the first wavelength incident from the light incident surface can excite the first quantum dot in the first quantum dot emitting layer to emit light of the second wavelength, and the light of the second wavelength is emitted through the first reflective layer, not being The first wavelength of light converted by the first quantum dot in a quantum dot luminescent layer is reflected by the first reflective layer and cannot be emitted through the first reflective layer, so that the color purity of the light output of the color filter is high.
下面,结合附图对本公开实施例提供的彩膜片、彩膜片的制作方法、彩膜基板和显示装置进行详细的说明。Hereinafter, the color film sheet, the color film sheet manufacturing method, the color film substrate and the display device provided by the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
本公开一实施例提供一种彩膜片。图2为根据本实施例的一种彩膜片的结构示意图。如图2所示,该彩膜片100包括第一量子点发光层110和第一反射层130。第一量子点发光层110具有一光入射面111;第一量子点发光层110包括多个第一量子点115,第一量子点115可受来自光入射面111的第一波长的光(如图2中实线所示)激发后发出第二波长的光(如图2中虚线所示),从而使该彩膜片可发出第二波长的光。第一反射层130位于第一量子点发光层110远离光入射面111的一侧,可透射第二波长的光并反射第一波长的光。需要说明的是,上述的第一波长和第二波长不仅可代表具体的波长值,也可代表波长范围;例如,第一波长的光可为蓝光,第二波长的光可为红光或绿光。需要说明的是,第一波长的光包括但不限于蓝光,第二波长的光包括也不限于红光。另外,第一波长的光可由背光源提供。An embodiment of the present disclosure provides a color film. 2 is a schematic structural view of a color filter according to the embodiment. As shown in FIG. 2, the
在本实施例提供的彩膜片100中,位于第一量子点发光层110远离光入射面111一侧的第一反射层130可透射第二波长的光并反射第一波长的光。由此,第一反射层130可避免未被第一量子点115转化的第一波长的光从第一反射层130射出,从而可提高该彩膜片的出光色纯度。例如,当第一波长的光为蓝光,第二波长的光为红光时,如图2所示,一部分蓝光从第一量子点发光层110的光入射面111入射第一量子点发光层110,激发第一量子点115发出红光,部 分红光从第一反射层130出射;由于第一量子点发光层110中的第一量子点115的浓度不太高等原因,一部分蓝光未被第一量子点115转化,未被第一量子点115转化的蓝光被第一反射层130反射,不能从第一反射层130出射,从而可提高该彩膜片的红光色纯度。In the
例如,第一反射层的厚度为400-600nm。当第一反射层的厚度范围在400-600nm范围内时同时具有对第一波长的光的较高的反射率和对第二波长的光的较高的透射率。For example, the thickness of the first reflective layer is 400-600 nm. When the thickness of the first reflective layer ranges from 400 to 600 nm, it has both a higher reflectance for light of the first wavelength and a higher transmittance for light of the second wavelength.
例如,如图2所示,该彩膜片100还包括位于第一反射层130远离光入射面111的一侧的衬底基板101,以支撑上述的第一量子点发光层110和第一反射层130。衬底基板101可为玻璃基板。For example, as shown in FIG. 2, the
例如,如图2所示,该彩膜片100还包括位于第一量子点发光层110的光入射面111所在的一侧的覆盖层190,以保护上述的第一量子点发光层110。For example, as shown in FIG. 2, the
例如,第一量子点的材料可以选用II-VI族的CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe和III-V族GaAs、GaP、GaAs、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、AlSb等材料。For example, the material of the first quantum dot may be selected from Group II-VI CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, and III-V GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP. , InSb, AlAs, AlP, AlSb and other materials.
例如,在本实施例中,可通过控制第一量子点的粒径来控制量子点的发光波长或波段。以ZnS量子点为例,第一量子点的尺寸主要在9-10nm时,可发射红光,第一量子点的尺寸主要在7nm时,可发射绿光。For example, in the present embodiment, the emission wavelength or wavelength band of the quantum dot can be controlled by controlling the particle diameter of the first quantum dot. Taking ZnS quantum dots as an example, the size of the first quantum dot is mainly 9-10 nm, and red light can be emitted. When the size of the first quantum dot is mainly at 7 nm, green light can be emitted.
图3为另一种彩膜片的结构示意图。如图3所示,该彩膜片还包括位于第一量子点发光层110和第一反射层130之间的第二量子点发光层120。第二量子点发光层120包括多个第二量子点125和多个光吸收材料127。第二量子点125可受来自光入射面111的第一波长的光(如图3中实线所示)激发后发出第二波长的光(如图3中虚线所示),光吸收材料127可吸收第一波长的光。由此,一方面,该彩膜片可通过额外设置的第二量子点发光层120中的第二量子点125将未被第一量子点发光层110中的第一量子点115转化的第一波长的光转化为第二波长的光,从而进一步提高对来自光入射面111的第一波长的光的利用效率,减少射向第一反射层130的第一波长的光;另一方面,该彩膜片可通过额外设置的第二量子点发光层120中的光吸收材料127将未被第一量子点发光层110中的第一量子点115转化的第一波长的光吸收,从而进一步减少射向第一反射层130的第一波长的光。由此,该彩膜片进一步提高了出光的色纯度,并且提高对来自光入射面的第一波长的光的利用效率。Figure 3 is a schematic view showing the structure of another color film. As shown in FIG. 3, the color filter film further includes a second quantum dot
值得注意的是,在一些示例中,光吸收材料的尺寸与第二量子点的尺寸在一个数量级上,从而便于两者更均匀地分布,防止产生堆积等现象。It is worth noting that, in some examples, the size of the light absorbing material is on the order of magnitude of the second quantum dot, thereby facilitating a more even distribution of the two, preventing buildup and the like.
例如,光吸收材料为可吸收第一波长的光的染料。当然,本公开包括但不限于此。For example, the light absorbing material is a dye that absorbs light of a first wavelength. Of course, the disclosure includes but is not limited thereto.
例如,第二量子点的材料可以选用II-VI族的CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe和III-V族GaAs、GaP、GaAs、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、AlSb等材料。需要说明的是,第二量子点的材料可与第一量子点的材料相同。For example, the second quantum dot material may be selected from the group II-VI CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, and III-V GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP. , InSb, AlAs, AlP, AlSb and other materials. It should be noted that the material of the second quantum dot may be the same as the material of the first quantum dot.
例如,在本实施例中,可通过控制第二量子点的粒径来控制量子点的发光波长或波段。以ZnS量子点为例,第二量子点的尺寸主要在9-10nm时,可发射红光,第二量子点的尺寸主要在7nm时,可发射绿光。For example, in the present embodiment, the emission wavelength or wavelength band of the quantum dot can be controlled by controlling the particle diameter of the second quantum dot. Taking ZnS quantum dots as an example, the size of the second quantum dot is mainly at 9-10 nm, and red light can be emitted. When the size of the second quantum dot is mainly at 7 nm, green light can be emitted.
图4为另一种彩膜片的结构示意图。如图4所示,该彩膜片还包括位于第一量子点发光层110的光入射面111所在的一侧的第二反射层140。第二反射层140可透射第一波长的光(如图4中实线所示)并反射第二波长的光(如图4中虚线所示)。如图4所示,由于第一量子点或第二量子点受到第一波长的光的激发后,会向四周都发射第二波长的光,而位于第一量子点发光层110的光入射面111所在的一侧的第二反射层140可将射向第二反射层140的光反射至远离光入射面111的方向,最终从第一反射层130射出,减少了第二波长的光的损失,大大提高了该彩膜片对第一波长的光的转化效率。另一方面,第二反射层还可采用增透膜的原理进行设计,从而提高第一波长的光的透过率。Figure 4 is a schematic view showing the structure of another color film. As shown in FIG. 4, the color filter film further includes a second
需要说明的是,本实施例中的第一反射层和第二反射层可通过高折射率层和低折射率层组成的结构来实现。It should be noted that the first reflective layer and the second reflective layer in this embodiment can be realized by a structure composed of a high refractive index layer and a low refractive index layer.
例如,图5为另一种彩膜片的结构示意图。如图5所示,第一反射层130包括多个依次设置的第一子反射层1300,各第一子反射层1300包括沿从光入射面111到第一反射层130的方向依次设置的第一折射率层131和第二折射率层132,第一折射率层131的折射率大于第二折射率132的折射率。由此,在第一子反射层1300中,第一波长的光和第二波长的光从折射率较大的第一折射率层131向折射率较小的第二折射率层132传播,由此,可通过布拉格反射的原理设置第一折射率层和第二折射率层的光学厚度以实现透射第二波长的光并反射第一波长的光。For example, FIG. 5 is a schematic structural view of another color film. As shown in FIG. 5, the first
例如,图6为另一种彩膜片的结构示意图。如图6所示,第二反射层140 包括多个依次设置的第二子反射层1400,各第二子反射层1400包括沿从光入射面111到第一反射层130的方向依次设置的第三折射率层141和第四折射率层142,第三折射率层141的折射率小于第四折射率层142的折射率。在第一子反射层1400中,第一波长的光从折射率较小的第三折射率层141向折射率较大的第四折射率层142传播,第二波长的光从折射率较大的第四折射率层142向折射率较小的第三折射率层141传播,由此,可通过增透膜的原理设置第三折射率层和第四折射率层的光学厚度以实现对第一波长的光的透射,并可增加第一波长的光的透射率,也可通过布拉格反射的原理设置第三折射率层和第四折射率层的光学厚度以实现对第二波长的光的反射。需要说明的是,可通过计算机模拟以设置合理的第三折射率层和第四折射率层的光学厚度以同时实现透射第一波长的光并反射第二波长的光。For example, FIG. 6 is a schematic structural view of another color film. As shown in FIG. 6 , the second
需要说明的是,上述第一折射率层、第二折射率层、第三折射率层和第四折射率层的具体光学厚度可通过计算和模拟获得。It should be noted that the specific optical thicknesses of the first refractive index layer, the second refractive index layer, the third refractive index layer, and the fourth refractive index layer can be obtained by calculation and simulation.
例如,第二反射层的厚度为400-600nm。当第二反射层的厚度范围在400-600nm范围内时同时具有对第一波长的光的较高的透射率和对第二波长的光的较高的反射率。For example, the thickness of the second reflective layer is 400-600 nm. When the thickness of the second reflective layer ranges from 400 to 600 nm, it has both a higher transmittance for light of the first wavelength and a higher reflectance for light of the second wavelength.
例如,第一折射率层和第二折射率层的材料可为氧化钛和氧化硅(TiO 2/SiO 2)或者氧化锆和氟化镁(ZrO 2/MgF 2)。当然,本公开包括但不限于此,第一折射率层和第二折射率层还可采用其他材料制作。 For example, the material of the first refractive index layer and the second refractive index layer may be titanium oxide and silicon oxide (TiO 2 /SiO 2 ) or zirconia and magnesium fluoride (ZrO 2 /MgF 2 ). Of course, the present disclosure includes but is not limited thereto, and the first refractive index layer and the second refractive index layer may also be made of other materials.
例如,第三折射率层和第四折射率层的材料可为氧化硅和氧化钛(SiO 2/TiO 2)或者氟化镁和氧化锆(MgF 2/ZrO 2)。当然,本公开包括但不限于此,第三折射率层和第四折射率层还可采用其他材料制作。 For example, the materials of the third refractive index layer and the fourth refractive index layer may be silicon oxide and titanium oxide (SiO 2 /TiO 2 ) or magnesium fluoride and zirconium oxide (MgF 2 /ZrO 2 ). Of course, the present disclosure includes but is not limited thereto, and the third refractive index layer and the fourth refractive index layer may also be fabricated using other materials.
例如,第一波长的光为蓝光,第二波长的光为红光或绿光。当然,第一波长的光还可为其他光,例如,紫光、紫外光等;第二波长的光还可为黄光等;本公开包括但不限于此。For example, the light of the first wavelength is blue light, and the light of the second wavelength is red light or green light. Of course, the light of the first wavelength may also be other light, for example, violet light, ultraviolet light, etc.; the light of the second wavelength may also be yellow light or the like; the disclosure includes but is not limited thereto.
例如,在一些示例中,如图6所示,衬底基板101远离第一量子点发光层110的一侧可设置有微透镜结构109,从而对出射的第二波长的光的出光范围进行控制。例如,可通过对衬底基板远离第一量子点发光层的一侧的表面进行表面处理以形成上述的微透镜结构。For example, in some examples, as shown in FIG. 6, a side of the
本公开一实施例提供一种彩膜基板。图7为一种彩膜基板的平面示意图。如图7所示,该彩膜基板包括上述任一示例所描述的彩膜片。由此,该彩膜基 板具有较高出光色纯度,可提高采用该彩膜基板的显示装置的色域,从而使得采用该彩膜基板的显示装置具有更好的画面品质。An embodiment of the present disclosure provides a color film substrate. 7 is a schematic plan view of a color filter substrate. As shown in FIG. 7, the color filter substrate includes the color film described in any of the above examples. Thereby, the color film substrate has a higher color purity, and the color gamut of the display device using the color film substrate can be improved, so that the display device using the color film substrate has better picture quality.
例如,如图7所示,彩膜片100可包括红色彩膜片1101和绿色彩膜片1102。红色彩膜片1101可作为红色滤光片,绿色彩膜片1102可作为绿色滤光片。在红色彩膜片1101中,第一量子点和第二量子点可受激发射红光;在绿色彩膜片1102中,第一量子点和第二量子点可受激发射绿光。For example, as shown in FIG. 7, the
例如,在一些实施例中,该彩膜基板还包括蓝色滤光区域,可透蓝色的光。For example, in some embodiments, the color filter substrate further includes a blue filter region that is permeable to blue light.
例如,上述的彩膜基板可用于背光为蓝光的显示装置中。需要说明的是,当背光为蓝光时,彩膜基板上对应蓝色滤光片的区域,即蓝色滤光区域,可设置为透明,不设置任何量子点发光层以作为蓝色滤光片。For example, the color film substrate described above can be used in a display device in which the backlight is blue light. It should be noted that when the backlight is blue light, the region corresponding to the blue color filter on the color filter substrate, that is, the blue filter region, may be set to be transparent, and no quantum dot light emitting layer is disposed as the blue color filter. .
例如,如图7所示,彩膜基板还包括围绕彩膜片100的黑色矩阵200。For example, as shown in FIG. 7, the color filter substrate further includes a
本公开一实施例还提供一种显示面板,包括上述任一示例所描述的彩膜基板。由此,该显示面板中的各子像素具有较高的色纯度,从而可提高该显示装置的色域,从而使得该显示面板具有更好的画面品质。An embodiment of the present disclosure further provides a display panel including the color film substrate described in any of the above examples. Thereby, each sub-pixel in the display panel has a higher color purity, so that the color gamut of the display device can be improved, thereby making the display panel have better picture quality.
例如,该显示面板还包括阵列基板,与彩膜基板对盒设置;以及设置在阵列基板和彩膜基板之间的液晶层。For example, the display panel further includes an array substrate disposed opposite to the color filter substrate; and a liquid crystal layer disposed between the array substrate and the color filter substrate.
本公开一实施例还提供一种显示装置,包括上述任一示例所描述的彩膜片。由此,该显示装置中的各子像素具有较高的色纯度,从而可提高该显示装置的色域,从而使得该显示装置具有更好的画面品质。An embodiment of the present disclosure further provides a display device comprising the color film described in any of the above examples. Thereby, each sub-pixel in the display device has a higher color purity, so that the color gamut of the display device can be improved, thereby making the display device have better picture quality.
例如,显示装置可为手机、电脑、电视、笔记本电脑、导航仪、可穿戴式显示装置等任意具有显示功能的电子产品。For example, the display device may be any electronic product having a display function such as a mobile phone, a computer, a television, a notebook computer, a navigator, a wearable display device, or the like.
需要说明的是,显示装置可为液晶显示装置,也可为有机发光二极管显示装置;本公开在此不作限制。It should be noted that the display device may be a liquid crystal display device or an organic light emitting diode display device; the disclosure is not limited herein.
本公开一实施例提供一种彩膜片的制作方法。图8为一种彩膜片的制作方法的流程图。如图8所示,该彩膜片的制作方法包括步骤S401-S403。An embodiment of the present disclosure provides a method of fabricating a color film. FIG. 8 is a flow chart of a method of fabricating a color film. As shown in FIG. 8, the method for fabricating the color film includes steps S401-S403.
步骤S401:将多个第一量子点混合到第一有机溶剂中以形成第一发光层材料。Step S401: mixing a plurality of first quantum dots into the first organic solvent to form a first luminescent layer material.
例如,有机溶剂可为丙二醇甲醚醋酸酯(PGMEA)。For example, the organic solvent may be propylene glycol methyl ether acetate (PGMEA).
步骤S402:使用第一发光层材料形成第一量子点发光层,第一量子点发光具有一光入射面,第一量子点被配置为受来自光入射面的第一波长的光激发后发出第二波长的光。Step S402: forming a first quantum dot luminescent layer using the first luminescent layer material, the first quantum dot illuminating light has a light incident surface, and the first quantum dot is configured to be excited by the light of the first wavelength from the light incident surface. Two wavelengths of light.
例如,可先形成第一量子点材料的膜层,然后采用光刻工艺形成第一量子点发光层,这样第一量子点层的形成步骤较为简单,成本较低。当然,本公开包括但不限于此,也可采用喷墨打印工艺使用第一发光层材料形成第一量子点发光层。需要说明的是,当采用喷墨打印工艺时,可通过调整打印次数,打印滴数和液滴大小来调整膜层厚度。For example, the film layer of the first quantum dot material may be formed first, and then the first quantum dot light emitting layer is formed by a photolithography process, so that the forming step of the first quantum dot layer is relatively simple and the cost is low. Of course, the present disclosure includes but is not limited thereto, and the first quantum dot light-emitting layer may be formed using the first light-emitting layer material by an inkjet printing process. It should be noted that when the inkjet printing process is employed, the film thickness can be adjusted by adjusting the number of printings, the number of printing drops, and the droplet size.
步骤S403:在第一量子点发光层远离光入射面的一侧形成第一反射层,第一反射层被配置为透射第二波长的光并反射第一波长的光。Step S403: forming a first reflective layer on a side of the first quantum dot light emitting layer away from the light incident surface, the first reflective layer being configured to transmit the light of the second wavelength and reflect the light of the first wavelength.
例如,反射层可通过sputter、真空蒸镀、ALD等镀膜方式形成。For example, the reflective layer can be formed by a sputtering method such as sputter, vacuum evaporation, or ALD.
由此,在本实施例提供的彩膜片中,位于第一量子点发光层远离光入射面一侧的第一反射层可透射第二波长的光并反射第一波长的光。由此,第一反射层可避免未被第一量子点转化的第一波长的光从第一反射层射出,从而可提高该彩膜片的出光色纯度。Therefore, in the color filter provided in the embodiment, the first reflective layer located on the side of the first quantum dot emitting layer away from the light incident surface can transmit the light of the second wavelength and reflect the light of the first wavelength. Thereby, the first reflective layer can prevent the light of the first wavelength not converted by the first quantum dot from being emitted from the first reflective layer, thereby improving the color purity of the color of the color filter.
例如,在一些示例中,该彩膜片的制作方法还包括:将多个第二量子点、光吸收材料混合到第二有机溶剂中以形成第二发光层材料,第二量子点被配置为受来自光入射面的第一波长的光激发后发出第二波长的光光吸收材料被配置为吸收第一波长的光;以及使用第二发光层材料在第一量子点发光层与第一反射层之间形成第二量子点发光层。由此,一方面,可通过额外设置的第二量子点发光层中的第二量子点将未被第一量子点发光层中的第一量子点转化的第一波长的光转化为第二波长的光,从而进一步提高对来自光入射面的第一波长的光的利用效率,减少射向第一反射层的第一波长的光;另一方面,还可通过额外设置的第二量子点发光层中的光吸收材料将未被第一量子点发光层中的第一量子点转化的第一波长的光吸收,从而进一步减少射向第一反射层的第一波长的光。由此,该彩膜片的制作方法进一步提高了出光的色纯度,并且提高对来自光入射面的第一波长的光的利用效率。For example, in some examples, the method of fabricating the color filter further comprises: mixing a plurality of second quantum dots, a light absorbing material into the second organic solvent to form a second luminescent layer material, and the second quantum dot is configured to The light absorbing material emitting the second wavelength after being excited by the light of the first wavelength from the light incident surface is configured to absorb the light of the first wavelength; and the luminescent layer and the first reflection of the first quantum dot using the second luminescent layer material A second quantum dot luminescent layer is formed between the layers. Thus, in one aspect, light of a first wavelength that is not converted by the first quantum dot in the first quantum dot luminescent layer can be converted to a second wavelength by a second quantum dot in the second quantum dot luminescent layer that is additionally disposed Light, thereby further improving the utilization efficiency of light of the first wavelength from the light incident surface, reducing the light of the first wavelength directed to the first reflective layer; on the other hand, illuminating by the second quantum dot additionally provided The light absorbing material in the layer absorbs light of a first wavelength that is not converted by the first quantum dot in the first quantum dot luminescent layer, thereby further reducing light of the first wavelength that is directed toward the first reflective layer. Thereby, the method of producing the color filter sheet further improves the color purity of the light emitted, and improves the utilization efficiency of light of the first wavelength from the light incident surface.
例如,在一些示例中,第一有机溶剂与第二有机溶剂不混溶,从而可防止形成第二量子点光刻胶时第二有机溶剂溶解第一量子点发光层。需要说明的是,可以根据第一溶剂和第二溶剂不混溶的特点,旋涂多层膜,达到增厚第一量子点发光层或第二量子点发光层的厚度的目的。For example, in some examples, the first organic solvent is immiscible with the second organic solvent, thereby preventing the second organic solvent from dissolving the first quantum dot luminescent layer when the second quantum dot photoresist is formed. It should be noted that the multilayer film may be spin-coated according to the characteristics of immiscibility of the first solvent and the second solvent to achieve the purpose of thickening the thickness of the first quantum dot emitting layer or the second quantum dot emitting layer.
例如,第一量子点发光层厚度范围可为1-3um;第二量子点发光层的厚度范围可为1-3um。For example, the first quantum dot luminescent layer may have a thickness ranging from 1 to 3 um; and the second quantum dot luminescent layer may have a thickness ranging from 1 to 3 um.
例如,在一些示例中,第二发光层材料中第二量子点的质量百分数与光吸 收材料的质量百分数之比的范围在1-2,从而高效地吸收或转化第一波长的光,防止第一波长的光泄漏。For example, in some examples, the ratio of the mass percentage of the second quantum dot to the mass percentage of the light absorbing material in the second luminescent layer material is in the range of 1-2, thereby efficiently absorbing or converting the first wavelength of light, preventing the first A wavelength of light leaks.
例如,在一些示例中,第二发光层材料中第二量子点的质量百分数与光吸收材料的质量百分数之比为3:2,从而最大限度地吸收或转化第一波长的光,防止第一波长的光泄漏。For example, in some examples, the ratio of the mass percentage of the second quantum dot to the mass percentage of the light absorbing material in the second luminescent layer material is 3:2, thereby maximally absorbing or converting the first wavelength of light, preventing the first Light leakage at the wavelength.
例如,在一些示例中,彩膜片的制作方法还包括:在第一量子点发光层的光入射面的一侧形成第二反射层,第二反射层可透射第一波长的光并反射第二波长的光。由于第一量子点或第二量子点受到第一波长的光的激发后,会向四周都发射第二波长的光,而位于第一量子点发光层的光入射面所在的一侧的第二反射层可将射向第二反射层的光反射至远离光入射面的方向,最终从第一反射层射出,减少了第二波长的光的损失,大大提高了该彩膜片对第一波长的光的转化效率。另一方面,第二反射层还可采用增透膜的原理进行设计,从而提高第一波长的光的透过率。For example, in some examples, the method of fabricating the color filter film further includes: forming a second reflective layer on a side of the light incident surface of the first quantum dot light emitting layer, the second reflective layer transmitting light of the first wavelength and reflecting Two wavelengths of light. After the first quantum dot or the second quantum dot is excited by the light of the first wavelength, the second wavelength of light is emitted to all around, and the second light is located on the side of the light incident surface of the first quantum dot emitting layer. The reflective layer can reflect the light that is incident on the second reflective layer to a direction away from the light incident surface, and finally emits from the first reflective layer, reducing the loss of light of the second wavelength, and greatly improving the first wavelength of the color filter. The conversion efficiency of light. On the other hand, the second reflective layer can also be designed using the principle of an anti-reflection film to increase the transmittance of light at the first wavelength.
例如,在一些示例中,第一发光层材料还包括树脂、光引发剂和添加剂。可通过将第一量子点、树脂、光引发剂和添加剂的总质量百分数控制在15%-30%的范围,从而使得该第一反光层材料适于光刻工艺,从而可简化该彩膜片的制作方法。另外,本示例提供的第一发光层材料可同时兼容光刻,喷墨打印等方法。For example, in some examples, the first luminescent layer material further includes a resin, a photoinitiator, and an additive. The first light-reflecting layer material can be adapted to a photolithography process by controlling the total mass percentage of the first quantum dots, the resin, the photoinitiator, and the additive to a range of 15% to 30%, thereby simplifying the color filter film Production method. In addition, the first luminescent layer material provided by the present example can be compatible with methods such as photolithography, inkjet printing, and the like.
值得注意的是,当采用光刻工艺形成第一量子点发光层时,光刻工艺的光密度值范围可为1.5-2.5。例如,光刻工艺的光密度值范围可为2。It is worth noting that when the first quantum dot light-emitting layer is formed by a photolithography process, the optical density value of the photolithography process may range from 1.5 to 2.5. For example, the photolithography process can have an optical density value in the range of two.
例如,在一些示例中,第二发光层材料也可包括树脂、光引发剂和添加剂。同样地,也可通过将第二量子点、光吸收材料、树脂、光引发剂和添加剂的总质量百分数控制在15%-30%的范围,从而使得第二发光层材料适于光刻工艺,从而可简化该彩膜片的制作方法。For example, in some examples, the second luminescent layer material can also include a resin, a photoinitiator, and an additive. Similarly, the second luminescent layer material can also be adapted to the lithography process by controlling the total mass percentage of the second quantum dots, the light absorbing material, the resin, the photoinitiator, and the additive to be in the range of 15% to 30%. Thereby, the method of fabricating the color film can be simplified.
需要说明的是,上述的添加剂为光刻胶中常用的用于调节光刻胶黏度和表面张力的材料。It should be noted that the above additives are materials commonly used in photoresists for adjusting the viscosity and surface tension of photoresists.
例如,在一些示例中,可将第一量子点、树脂、光引发剂和添加剂的总质量百分数控制在20%。由此,该第一发光层材料适于光刻工艺,从而可简化该彩膜片的制作方法。For example, in some examples, the total mass percentage of the first quantum dot, resin, photoinitiator, and additive can be controlled to 20%. Thereby, the first luminescent layer material is suitable for a photolithography process, thereby simplifying the method of fabricating the color film.
例如,在一些示例中,可将第一量子点的质量百分数调整为5%-10%,树脂的质量百分数的调整为5%-25%。从而一方面可防止第一量子点产生堆积等 现象,另一方面可获得较高的对第一波长的光的转化效率。另外,还可使得该第一发光层材料适于光刻工艺,从而可简化该彩膜片的制作方法。For example, in some examples, the mass percentage of the first quantum dot can be adjusted to 5%-10%, and the mass percentage of the resin can be adjusted from 5% to 25%. Thereby, on the one hand, the phenomenon that the first quantum dots are accumulated and the like can be prevented, and on the other hand, the conversion efficiency of the light of the first wavelength can be obtained. In addition, the first luminescent layer material can also be adapted to a photolithography process, thereby simplifying the method of fabricating the color film.
例如,在一些示例中,可将第一量子点的质量百分数调整为5%,树脂的质量百分数调整为10%。从而一方面可防止第一量子点产生堆积等现象,另一方面可获得较高的对第一波长的光的转化效率。另外,还可使得该第一发光层材料适于光刻工艺,从而可简化该彩膜片的制作方法。For example, in some examples, the mass percentage of the first quantum dot can be adjusted to 5% and the mass percentage of the resin adjusted to 10%. Thereby, on the one hand, the phenomenon that the first quantum dots are accumulated and the like can be prevented, and on the other hand, the conversion efficiency of the light of the first wavelength can be obtained. In addition, the first luminescent layer material can also be adapted to a photolithography process, thereby simplifying the method of fabricating the color film.
例如,在一些示例中,该彩膜片的制作方法还包括分别对第一量子点发光层和第二量子点发光层进行曝光显影,从而得到图案化的第一量子点发光层和第二量子点发光层。需要注意的是,光刻工艺中的烘烤温度需要控制在150℃以下,防止量子点高温猝灭。For example, in some examples, the method for fabricating the color film further comprises performing exposure development on the first quantum dot luminescent layer and the second quantum dot luminescent layer, respectively, thereby obtaining a patterned first quantum dot luminescent layer and a second quantum. Point light layer. It should be noted that the baking temperature in the photolithography process needs to be controlled below 150 ° C to prevent high temperature quenching of the quantum dots.
例如,在一些示例中,该彩膜片的制作方法还包括:提供衬底基板。该彩膜片的制作方法的制作顺序可为:先在衬底基板上形成第一反射层,然后再在第一反射层远离衬底基板的一侧形成第二量子点发光层,并对第二量子点发光层进行曝光显影以获得图案化的第二量子点发光层,然后在第二量子点发光层远离衬底基板的一侧形成第一量子点发光层,并对第一量子点发光层进行曝光显影以获得图案化的第一量子点发光层,最后制作第二反射层和覆盖层(流平层)。当然,该彩膜片的制作方法的制作顺序包括但不限于此,本公开在此不作限制。For example, in some examples, the method of fabricating the color film further comprises: providing a substrate. The manufacturing method of the color film sheet may be: forming a first reflective layer on the base substrate, and then forming a second quantum dot light emitting layer on a side of the first reflective layer away from the base substrate, and The second quantum dot light-emitting layer is subjected to exposure and development to obtain a patterned second quantum dot light-emitting layer, and then a first quantum dot light-emitting layer is formed on a side of the second quantum dot light-emitting layer away from the substrate, and the first quantum dot is illuminated. The layer is subjected to exposure development to obtain a patterned first quantum dot light-emitting layer, and finally a second reflective layer and a cover layer (leveling layer) are formed. Of course, the order of making the color film sheet includes, but is not limited to, the present disclosure is not limited herein.
例如,在一些示例中,该彩膜片的制作方法还包括:对衬底基板远离第一量子点发光层的一侧的表面进行表面处理以形成微透镜结构,从而对第二波长的光的出光范围进行控制。For example, in some examples, the method of fabricating the color filter film further comprises: surface-treating a surface of the substrate substrate away from the side of the first quantum dot light-emitting layer to form a microlens structure, thereby illuminating the second wavelength The light output range is controlled.
有以下几点需要说明:There are a few points to note:
(1)本公开实施例附图中,只涉及到与本公开实施例涉及到的结构,其他结构可参考通常设计。(1) In the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are referred to, and other structures may be referred to the general design.
(2)在不冲突的情况下,本公开同一实施例及不同实施例中的特征可以相互组合。(2) The features of the same embodiment and different embodiments of the present disclosure may be combined with each other without conflict.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above is only the specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the disclosure. It should be covered within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be determined by the scope of the claims.
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