CN111128035A - OLED display panel and display thereof - Google Patents
OLED display panel and display thereof Download PDFInfo
- Publication number
- CN111128035A CN111128035A CN201811277532.4A CN201811277532A CN111128035A CN 111128035 A CN111128035 A CN 111128035A CN 201811277532 A CN201811277532 A CN 201811277532A CN 111128035 A CN111128035 A CN 111128035A
- Authority
- CN
- China
- Prior art keywords
- refractive index
- quantum dot
- layer
- oled display
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002096 quantum dot Substances 0.000 claims abstract description 116
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 230000000694 effects Effects 0.000 abstract description 5
- 230000000149 penetrating effect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 84
- 239000000463 material Substances 0.000 description 28
- 238000010586 diagram Methods 0.000 description 18
- 239000010409 thin film Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 8
- 239000001052 yellow pigment Substances 0.000 description 7
- 238000000411 transmission spectrum Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910020165 SiOc Inorganic materials 0.000 description 2
- 229910020776 SixNy Inorganic materials 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012860 organic pigment Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to an OLED display panel comprising: a blue light source layer; the quantum dot unit is positioned on the blue light source layer, and comprises a red quantum dot unit and a green quantum dot unit; and the first Bragg reflection layer is positioned on the quantum dot unit. According to the invention, the first Bragg reflection layer is coated on the quantum dot unit, when the blue light emitted by the blue light source layer is not absorbed by the quantum dot unit, the blue light penetrating through the quantum dot unit is reflected back to the quantum dot unit due to the reflection effect of the first Bragg reflection layer, so that the quantum dots in the quantum dot unit can be re-excited, the luminous efficiency is improved, the light leakage phenomenon of the OLED display panel is solved, and the color reduction capability of the OLED display panel is improved.
Description
Technical Field
The invention relates to the technical field of OLED display, in particular to an OLED display panel and a display thereof.
Background
Organic Light Emitting Diodes (OLEDs) have excellent characteristics such as self-luminescence, low power consumption, wide viewing angle, and fast response, and are widely used in the manufacture of display panels. And the display panel made of the OLED has the characteristics of simple structure, flexibility and the like, thereby arousing great interest in the scientific research and industrial fields and being considered as the next generation display technology with great potential.
In the prior art, it is a mainstream technology of an OLED display panel to uniformly mix a certain amount of Quantum Dots (QD) in a dispersion material to emit light. Referring to fig. 1, fig. 1 is a schematic structural diagram of an OLED display panel provided in the prior art, which mainly uses light emitted from a blue light source to excite materials of Red light Quantum dots (QD-Red, Quantum dots-Red) and Green light Quantum dots (QD-Green, Quantum dots-Green) to respectively excite light in a Red light band and light in a Green light band, and the excited light and the remaining blue light are used as basic structural units of an OLED display.
Referring to fig. 2, fig. 2 is a schematic structural diagram of another OLED display panel provided in the prior art. In the OLED display panel, a certain amount of quantum dots need to be uniformly mixed into a dispersion material, but the quantum dots reach a nanometer level, if the number of the quantum dots in the dispersion material is too large, the average distance between the quantum dots is very small, and the quantum dots are aggregated into a group with different sizes due to the attraction of intermolecular forces (such as hydrogen bonds, van der waals forces, and the like), so that the quantum dots are not uniformly dispersed in the dispersion material, and light absorption is insufficient, thereby causing a light leakage phenomenon, and further causing a problem of a decrease in color reduction capability; if the density of quantum dots within the dispersed material is reduced to such an extent that they are not clustered, the dispersed material needs to be thickened, which also causes insufficient light absorption, thereby causing a light leakage phenomenon, and also causes a problem of a decrease in color reducibility.
Disclosure of Invention
Therefore, to solve the technical defects and shortcomings of the prior art, the invention provides an OLED display panel and a display thereof.
Specifically, an embodiment of the present invention provides an OLED display panel, including:
a blue light source layer;
the quantum dot unit is positioned on the blue light source layer, and comprises a red quantum dot unit and a green quantum dot unit;
and the first Bragg reflection layer is positioned on the quantum dot unit.
In an embodiment of the invention, the refractive index ratio of the first Bragg reflection layer is 1.2-1.3.
In an embodiment of the invention, the number of the first bragg reflection layer is 4 to 30.
In one embodiment of the present invention, the first bragg reflection layer includes a plurality of first refractive index film layers and a plurality of second refractive index film layers, and the first refractive index film layers and the second refractive index film layers are sequentially stacked and alternately arranged.
In one embodiment of the invention, the quantum dot unit further comprises a second bragg reflection layer located between the blue light source layer and the quantum dot unit.
In an embodiment of the invention, the refractive index ratio of the second Bragg reflection layer is 1.7-1.85.
In an embodiment of the invention, the number of the film layers of the second bragg reflection layer is 4 to 30.
In one embodiment of the present invention, the second bragg reflection layer includes a plurality of third refractive index film layers and a plurality of fourth refractive index film layers, and the third refractive index film layers and the fourth refractive index film layers are sequentially stacked and alternately arranged.
In an embodiment of the invention, the liquid crystal display further includes a yellow photoresist on the first bragg reflector layer.
An embodiment of the present invention further provides an OLED display, which includes the OLED display panel according to any one of the above embodiments.
The embodiment of the invention has the following beneficial effects:
according to the invention, the first Bragg reflection layer is coated on the quantum dot unit, when the blue light emitted by the blue light source layer is not absorbed by the quantum dot unit, the blue light penetrating through the quantum dot unit is reflected back to the quantum dot unit due to the reflection effect of the first Bragg reflection layer, so that the quantum dots in the quantum dot unit can be re-excited, the luminous efficiency is improved, the light leakage phenomenon of the OLED display panel is solved, and the color reduction capability of the OLED display panel is improved.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an OLED display panel provided in the prior art;
FIG. 2 is a schematic structural diagram of another OLED display panel provided in the prior art;
fig. 3 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention;
fig. 6a to 6b are schematic structural diagrams of a first bragg reflector according to an embodiment of the disclosure;
FIG. 7 is a schematic diagram illustrating reflection characteristics of a Bragg reflector according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention;
FIG. 9 is a schematic diagram illustrating a relationship between a wavelength and a transmittance according to an embodiment of the present invention;
FIG. 10 is a schematic diagram illustrating another relationship between wavelength and transmittance according to an embodiment of the present invention;
FIG. 11 is a schematic diagram illustrating a relationship between a refractive index ratio and a half-height transmission bandwidth according to an embodiment of the present invention;
FIG. 12 is a schematic diagram illustrating a relationship between a center wavelength, a transmittance and a reflectance according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention;
FIG. 14 is a schematic diagram illustrating a relationship between a wavelength and a transmittance according to another embodiment of the present invention;
fig. 15 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Example one
Referring to fig. 3, fig. 3 is a schematic structural diagram of an OLED display panel according to an embodiment of the invention. The embodiment of the invention provides an OLED display panel, which comprises:
a blue light source layer 30;
quantum dot units on the blue light source layer 30, wherein the quantum dot units include red quantum dot units 41 and green quantum dot units 42;
and a first Bragg reflection layer 50 positioned on the quantum dot unit.
According to the embodiment of the invention, the first Bragg reflection layer is coated on the quantum dot unit, when the blue light emitted by the blue light source layer is not absorbed by the quantum dot unit, the blue light penetrating through the quantum dot unit is reflected back to the quantum dot unit due to the reflection effect of the first Bragg reflection layer, so that the quantum dots in the quantum dot unit can be re-excited, the blue light source can be repeatedly utilized, the light emitting efficiency is improved, the light leakage phenomenon of the OLED display panel is solved, and the color reducing capability of the OLED display panel is improved.
Referring to fig. 4, the OLED display panel of the present embodiment may further include a substrate 10 and a Thin Film Transistor Array layer 20(TFT is collectively called Thin Film Transistor), wherein the Thin Film Transistor Array layer 20 is located on the substrate 10, and the blue light source layer 30 is located on the Thin Film Transistor Array layer 20.
Specifically, the substrate may be made of a semiconductor material such as glass or quartz, or an organic polymer.
Specifically, the thin film transistor array layer 20 is used to drive the blue light source layer to emit light.
Specifically, the blue light source layer 3 is an excitation light source, and the light source provided by the blue light source layer is a blue light source.
Preferably, the blue light source layer 3 is a blue OLED or a blue Micro led (Micro light emitting diode).
Referring to fig. 5, specifically, the red quantum dot unit 41 is composed of a dispersion material 411 and red quantum dots 412, wherein the red quantum dots 412 are uniformly distributed in the dispersion material 411, the red quantum dots 412 are excited by the blue light source of the blue light source layer 30 to emit light in a red light band, when the blue light source entering the red quantum dot unit 41 is not absorbed by the red quantum dots 412, the red quantum dot unit 41 is transmitted, and the first bragg reflective layer reflects the blue light transmitted from the red quantum dot unit 41 back to the red quantum dot unit 41 for re-exciting the red quantum dots 412 to generate red light, so as to improve the light emitting efficiency, and solve the problem that the blue light leaks out due to insufficient light absorption of the red quantum dot unit 41, thereby improving the color reduction capability of the OLED display panel.
Referring to fig. 5 again, the green quantum dot unit 42 is composed of a dispersion material 421 and green quantum dots 422, wherein the green quantum dots 422 are uniformly distributed in the dispersion material 421, the green quantum dots 422 are excited by the blue light source of the blue light source layer 30 to emit light in a green light band, when the blue light source entering the green quantum dot unit 42 is not absorbed by the green quantum dots 422, the green quantum dot unit 42 is transmitted, and the first bragg reflective layer reflects the blue light transmitted by the green quantum dot unit 42 back to the green quantum dot unit 42 for re-exciting the green quantum dots 422 to emit green light, thereby improving the light emitting efficiency, and solving the problem that the blue light leaks out due to insufficient absorption of the green quantum dot unit 42, thereby improving the color reduction capability of the OLED display panel.
Referring to fig. 6a to 6b, the first Bragg Reflector layer 50 is used for reflecting blue light transmitted through the quantum dot unit, and the first Bragg Reflector layer 50 is a multilayer thin Reflector (DBR) structureFilm (Polymers), bragg mirror (also called distributed bragg reflector), is a mirror structure, bragg mirror is a multilayer structure with adjustable reflection characteristics. The first bragg reflective layer 50 is composed of first and second refractive index film layers 51 and 52 alternately arranged. The refractive indexes of the first refractive index film 51 and the second refractive index film 52 are different, the refractive index of the first refractive index film 51 may be higher than the refractive index of the second refractive index film 52, or may be lower than the refractive index of the second refractive index film 52, and the first bragg reflection layer 50 may be represented by (H)1L1)PH1、(H1L1)P、(L1H1)PL1Or (L)1H1)PP is a positive integer, p represents a total of p sets of alternating layers of high and low refractive index, each set comprising a first layer 51 of refractive index and a second layer 52 of refractive index, wherein H1Is a high refractive index film layer, L1Is a low refractive index film layer, for example, the refractive index of the first refractive index film layer 51 is higher than that of the second refractive index film layer 52, then H1Representing the first refractive index film layer 51, L1Representing the second index film layer 52.
Preferably, the number of the film layers of the first Bragg reflection layer is 4-30, i.e. p is 2-15.
The first and second refractive index film layers 51 and 52 are made of optical materials, for example, the first refractive index film layer 51 is made of SixNyThe material of the second refractive index film 52 is SiOzFor another example, the material of the first refractive index film layer 51 is SiOzThe material of the second refractive index film layer 52 is SixNy. The first bragg reflective layer 50 is a quarter mirror, that is, the thickness of each layer of the first bragg reflective layer 50 satisfies the following relationship:
nH1dH1＝nL1dL1＝λ1/4
wherein n isH1Refractive index, n, corresponding to high refractive index materialL1Refractive index corresponding to the low refractive index material, dH1Thickness corresponding to high refractive index material, dL1Thickness, λ, corresponding to the material of low refractive index1For the central wavelength of the incident light to be reflected, e.g. nH1Is the refractive index of the first refractive index film layer 51, nL1Is the refractive index of the second refractive index film layer 52, dH1Thickness of the first refractive index film layer 51, dL1Is the thickness of the second refractive index film layer 52.
Referring to fig. 7, fresnel reflection occurs at the interface of the adjacent first and second refractive index film layers 51 and 52. When the wavelength is within the operating wavelength range of the first bragg reflector 50, the optical path length difference of the reflected light at the interface between the first refractive index film 51 and the second refractive index film 52 adjacent to the first bragg reflector 50 is half of the central wavelength of the incident light, and in addition, the reflection coefficient at the interface is also changed. Thus, all reflected light at the interface undergoes destructive interference, resulting in a strong reflection. Therefore, the blue light transmitted out of the quantum dot unit may be reflected back to the quantum dot unit by using the reflective characteristic of the first bragg reflective layer 50 for re-exciting the quantum dot.
In addition, the first bragg reflector 50 may also isolate the quantum dots in the quantum dot unit from the external environment, so as to prevent the quantum dots from being interfered by the external environment and affecting the quantum dots to release red light and green light.
Preferably, the refractive index ratio of the first bragg reflector 50 is 1.2 to 1.3, that is, if the refractive index of the first refractive index film 51 is greater than the refractive index of the second refractive index film 52, the refractive index ratio of the first refractive index film 51 to the second refractive index film 52 is 1.2 to 1.3, and if the refractive index of the first refractive index film 51 is less than the refractive index of the second refractive index film 52, the refractive index ratio of the second refractive index film 52 to the first refractive index film 51 is 1.2 to 1.3.
In an embodiment, another OLED display panel is further provided in the embodiments of the present invention, referring to fig. 8, the OLED display panel includes:
a substrate 10;
a thin film transistor array layer 20 on the substrate 10;
a blue light source layer 30 on the thin film transistor array layer 20;
a second bragg reflective layer 60 on the blue light source layer 30;
quantum dot units on the second bragg reflector 60, wherein the quantum dot units include a red quantum dot unit 41 and a green quantum dot unit 42;
and a first Bragg reflection layer 50 positioned on the quantum dot unit.
Specifically, after the blue light reflected by the first Bragg Reflector layer 50 is excited by the quantum dots in the quantum dot unit, a part of red light or green light is emitted toward the blue light source layer 30, the second Bragg Reflector layer 60 can reflect the part of the red light or green light back into the quantum dot unit, and the second Bragg Reflector layer 60 is a multilayer film (Polymers) with a Bragg Reflector (DBR) structure. The second bragg reflective layer 60 is formed by alternately arranging third refractive index film layers and fourth refractive index film layers. The refractive index of the third refractive index film layer is different from that of the fourth refractive index film layer, the refractive index of the third refractive index film layer may be higher than that of the fourth refractive index film layer or lower than that of the fourth refractive index film layer, and the second bragg reflective layer 60 may be represented by (H)2L2)qH2、(H2L2)q、(L2H2)qL2Or (L)2H2)qQ is a positive integer, q represents q groups of high and low refractive index alternating layers, each group comprises a third refractive index film layer and a fourth refractive index film layer, and H is H2Is a high refractive index film layer, L2For a low refractive index film layer, e.g., the refractive index of the third refractive index film layer is higher than the refractive index of the fourth refractive index film layer, H2Represents a third refractive index film layer, L2Representing a fourth refractive index film layer.
Preferably, the number of the film layers of the second bragg reflector layer 60 is 4 to 30, i.e., q is 2 to 15.
The third refractive index film layer and the fourth refractive index film layer are both made of optical materials, for example, the material of the third refractive index film layer is SiaNbThe fourth refractive index film layer is made of SiOcFor another example, the material of the third refractive index film layer is SiOcThe material of the fourth refractive index film layer is SiaNb. The second bragg reflection layer 60 is a quarter mirror, that is, the thickness of each layer of the second bragg reflection layer 60 satisfies the following relationship:
nH2dH2＝nL2dL2＝λ2/4
wherein n isH2Refractive index, n, corresponding to high refractive index materialL2Refractive index corresponding to the low refractive index material, dH2Thickness corresponding to high refractive index material, dL2Thickness, λ, corresponding to the material of low refractive index2For the central wavelength of the incident light to be reflected, e.g. nH2Is the refractive index of the third refractive index film layer, nL2Is the refractive index of the fourth refractive index film layer, dH2Is the thickness of the third refractive index film layer, dL2Is the thickness of the fourth refractive index film layer.
Fresnel reflections may occur at the interface of adjacent third and fourth refractive index film layers. When the wavelength is within the operating wavelength range of the second bragg reflector 60, the optical path length difference of the reflected light at the interface between the adjacent third refractive index film layer and the fourth refractive index film layer of the second bragg reflector 60 is half of the central wavelength of the incident light, and in addition, the reflection coefficient at the interface is also changed. Thus, all reflected light at the interface undergoes destructive interference, resulting in a strong reflection. Therefore, the red light or the green light transmitted out of the quantum dot unit can be reflected back to the quantum dot unit by using the reflection characteristic of the second bragg reflection layer 60, thereby transmitting through the quantum dot unit for re-emitting light.
Preferably, the refractive index ratio of the second bragg reflection layer 60 is 1.7 to 1.85, that is, if the refractive index of the third refractive index film layer is greater than the refractive index of the fourth refractive index film layer, the refractive index ratio of the third refractive index film layer to the fourth refractive index film layer is 1.7 to 1.85, and if the refractive index of the third refractive index film layer is less than the refractive index of the fourth refractive index film layer, the refractive index ratio of the fourth refractive index film layer to the third refractive index film layer is 1.7 to 1.85.
The embodiment of the invention coats the first Bragg reflection layer on the quantum dot unit, when the blue light emitted by the blue light source layer is not absorbed by the quantum dot unit, the blue light penetrating through the quantum dot unit can be reflected back into the quantum dot unit due to the reflection effect of the first Bragg reflection layer, so that the quantum dot in the quantum dot unit can be re-excited, the blue light source can be repeatedly utilized for many times, meanwhile, the second Bragg reflection layer is arranged between the blue light source layer and the quantum dot unit, the red light or the green light emitted towards the blue light source layer can be reflected back into the quantum dot unit, so that the red light or the green light penetrates through the quantum dot unit and is used for re-emitting, and due to the mutual matching effect of the first Bragg reflection layer and the second Bragg reflection layer, the light emitting efficiency of the OLED display panel can be further improved, and the light leakage phenomenon of the OLED display panel can be further improved, and the color reduction capability of the OLED display panel is improved.
Referring to fig. 9 and fig. 10, the extremum point of the reflected light transmission spectrum corresponds to the position where the transmittance of the reflected light is 100%, and the corresponding wavelength range is λ when the transmittance of the reflected light is 50%1～λ2Center wavelength λ0Is λ1And λ2At a midpoint of, λ3The lower limit wavelength when the transmittance of the bragg reflective layer is 50% (when the bragg reflective layer is the first bragg reflective layer, the corresponding reflected light is blue light, and when the bragg reflective layer is the second bragg reflective layer, the corresponding reflected light is red light and green light). Half-high transmission bandwidth L of reflected light0＝λ0﹣λ1. When the central wavelength of the Bragg reflection layer is equal to the central wavelength of the corresponding reflection light, the transmission bandwidth is 2 (L)0+ΔL0) Wherein Δ L0＝λ1﹣λ3Denotes the wavelength λ of the reflected light1Wavelength lambda with Bragg reflection layer3The difference between them.
Preferably,. DELTA.L0The range of (A) is 0 to 10 nm.
Referring to fig. 11, the abscissa represents the high/low refractive index ratio, and the ordinate represents the half-height transmission bandwidth.When the reflected light is blue light, its central wavelength is 460nm, and its correspondent L020-30 nm, a central wavelength of 560nm formed by overlapping green light and red light, and a wavelength corresponding to L0About 100 to 110nm, if Δ L is made0When the value range of (1) is 0-10 nm, the L of the first Bragg reflection layer030-40 nm, L of the second Bragg reflection layer0About 110 to 120nm, the refractive index ratio of the first Bragg reflector is 1.2 to 1.3, and the refractive index ratio of the second Bragg reflector is 1.7 to 1.85.
The higher the number of the film layers of the Bragg reflection layer is, the higher the corresponding reflectivity is, and when the number of the film layers is 4-30, the reflectivity of the Bragg reflection layer can reach more than 95%.
Referring to fig. 12, fig. 12 illustrates BLUE representing a transmission spectrum of a BLUE light source, G representing a transmission spectrum of green light excited by the QD, R representing a transmission spectrum of red light excited by the QD, DBR-B representing a transmission spectrum of the first bragg reflector, and DBR-Y representing a transmission spectrum of the first bragg reflector. For example, the first bragg reflection layer and the second bragg reflection layer are both arranged in a form of (HLHL … HL), the central wavelength of the first bragg reflection layer is designed to be 460nm, the refractive index ratio is 1.214, and when the number of film layers is 30, the reflectivity is 99.41%; the central wavelength of the second Bragg reflection layer is 560nm, the refractive index is 1.78, and the reflectivity is 99.73% when the number of film layers is 20.
In an embodiment, another OLED display panel is further provided in the embodiments of the present invention, referring to fig. 13, the OLED display panel includes:
a substrate 10;
a thin film transistor array layer 20 on the substrate 10;
a blue light source layer 30 on the thin film transistor array layer 20;
quantum dot units on the blue light source layer 30, wherein the quantum dot units include red quantum dot units 41 and green quantum dot units 42;
a first bragg reflective layer 50 on the quantum dot unit;
and a yellow photoresist 70 on the first bragg reflector layer 50.
The yellow light resistor can be used for absorbing blue light, when the blue light emitted by the blue light source layer is not absorbed by the quantum dot unit, a small part of the blue light possibly passes through the first Bragg reflection layer, the yellow light resistor is arranged on the first Bragg reflection layer, the part of the blue light can be absorbed, and excited red light and green light can pass through the yellow light resistor, so that the light leakage phenomenon of the OLED display panel can be further improved, and the color reduction capability of the OLED display panel is improved.
Referring to fig. 14, when the transmittance is 50%, the lower limit wavelength of the yellow photoresist is greater than the upper limit wavelength of the blue light and less than the lower limit wavelength of the excited green light, and the upper limit wavelength of the yellow photoresist is greater than the upper limit wavelength of the excited red light, so that the yellow photoresist includes light in a green band and light in a red band, and can transmit the excited red light and the excited green light and absorb the blue light.
Further, the yellow photoresist 70 includes a yellow pigment, a resin, a dispersant, a solvent, a photoinitiator, a multifunctional monomer, and an additive. The yellow pigment is an organic pigment and mainly plays a role in coloring, because a chromophoric group in a molecular structure of the yellow pigment can absorb light with a certain specific wavelength to enable the chromophoric group to generate energy level transition, the yellow pigment determines the color presenting property of the yellow light absorption photoresist, so that the yellow light absorption photoresist can transmit light in a red waveband and a green waveband and absorb light in a blue waveband. Please refer to table 1, wherein table 1 shows the main composition and content of the yellow photoresist.
TABLE 1
Preferably, the yellow pigment is an organic pigment, such as yellow pigments of pigment yellow 1, 2, 3, 4, 5, 6, 10, 12, 13, 14, 15, 16, 17, 18, and 24, and the like. Before preparing the yellow light-absorbing photoresist, the yellow pigment is usually subjected to surface refinement treatment to improve the transmittance of a light source.
In an embodiment, another OLED display panel is further provided in the embodiments of the present invention, referring to fig. 15, the OLED display panel includes:
a substrate 10;
a thin film transistor array layer 20 on the substrate 10;
a blue light source layer 30 on the thin film transistor array layer 20;
a second bragg reflective layer 60 on the blue light source layer 30;
quantum dot units on the second bragg reflector 60, wherein the quantum dot units include a red quantum dot unit 41 and a green quantum dot unit 42;
a first bragg reflective layer 50 on the quantum dot unit;
and a yellow photoresist 70 on the first bragg reflector layer 50.
The yellow light resistor can be used for absorbing blue light, when the blue light emitted by the blue light source layer is not absorbed by the quantum dot unit, a small part of the blue light possibly passes through the first Bragg reflection layer, the yellow light resistor is arranged on the first Bragg reflection layer, the part of the blue light can be absorbed, and excited red light and green light can pass through the yellow light resistor, so that the light leakage phenomenon of the OLED display panel can be further improved, and the color reduction capability of the OLED display panel is improved.
The first Bragg reflection layer can reflect the blue light penetrating through the quantum dot unit back to the quantum dot unit and can be used for exciting the quantum dot again, and therefore the light emitting efficiency of the OLED display panel is improved.
The second Bragg reflection layer can reflect the red light and the green light flowing to the blue light source layer again, so that the luminous efficiency of the OLED display panel is further improved.
The yellow light resistor provided by the embodiment of the invention can absorb redundant blue light, so that the light leakage phenomenon of the OLED display panel is further improved.
The first Bragg reflection layer, the second Bragg reflection layer and the yellow light resistance are arranged, so that the color reduction capability of the OLED display panel is further improved.
The embodiment of the invention also provides an OLED display, which comprises any one of the OLED display panels.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. An OLED display panel, comprising:
a blue light source layer;
the quantum dot unit is positioned on the blue light source layer, and comprises a red quantum dot unit and a green quantum dot unit;
and the first Bragg reflection layer is positioned on the quantum dot unit.
2. The OLED display panel of claim 1, wherein the refractive index ratio of the first Bragg reflection layer is 1.2-1.3.
3. The OLED display panel according to claim 1, wherein the number of the first Bragg reflection layer is 4-30.
4. The OLED display panel of claim 1, wherein the first Bragg reflection layer comprises a plurality of first refractive index film layers and a plurality of second refractive index film layers, and the first refractive index film layers and the second refractive index film layers are sequentially stacked and alternately arranged.
5. The OLED display panel of claim 1, further comprising a second bragg reflective layer between the blue light source layer and the quantum dot unit.
6. The OLED display panel of claim 5, wherein the refractive index ratio of the second Bragg reflection layer is 1.7-1.85.
7. The OLED display panel according to claim 5, wherein the number of the film layers of the second Bragg reflection layer is 4-30.
8. The OLED display panel of claim 5, wherein the second Bragg reflection layer comprises a plurality of third refractive index film layers and a plurality of fourth refractive index film layers, and the third refractive index film layers and the fourth refractive index film layers are sequentially stacked and alternately arranged.
9. The OLED display panel of any one of claims 1 or 5, further comprising a yellow photoresist on the first Bragg reflector layer.
10. An OLED display comprising the OLED display panel according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811277532.4A CN111128035A (en) | 2018-10-30 | 2018-10-30 | OLED display panel and display thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811277532.4A CN111128035A (en) | 2018-10-30 | 2018-10-30 | OLED display panel and display thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111128035A true CN111128035A (en) | 2020-05-08 |
Family
ID=70484435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811277532.4A Pending CN111128035A (en) | 2018-10-30 | 2018-10-30 | OLED display panel and display thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111128035A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111710800A (en) * | 2020-07-02 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for producing the same |
| CN113426024A (en) * | 2021-04-25 | 2021-09-24 | 上海大学 | Multifunctional light therapeutic device |
| CN113451483A (en) * | 2020-05-28 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Color conversion device, preparation method thereof and display back plate |
| CN115312650A (en) * | 2022-08-05 | 2022-11-08 | 深圳市挚钥文化科技有限责任公司 | Color converter and display |
| CN115472641A (en) * | 2022-11-01 | 2022-12-13 | 镭昱光电科技(苏州)有限公司 | A kind of microdisplay chip and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992628A (en) * | 2015-08-11 | 2015-10-21 | 京东方科技集团股份有限公司 | Thin film substrate and display device |
| CN106547136A (en) * | 2015-09-18 | 2017-03-29 | 三星电子株式会社 | Display device |
| CN107092048A (en) * | 2017-06-13 | 2017-08-25 | 深圳市华星光电技术有限公司 | Blue light absorption cut film and blue light display device |
| CN107357080A (en) * | 2017-08-30 | 2017-11-17 | 京东方科技集团股份有限公司 | Color diaphragm and preparation method thereof and color membrane substrates |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
| CN108281092A (en) * | 2018-01-24 | 2018-07-13 | 福州大学 | A kind of micron order LED shows the micro-structure and its manufacturing method of light efficiency extraction |
| CN108417724A (en) * | 2018-03-15 | 2018-08-17 | 京东方科技集团股份有限公司 | Light-emitting diode display and its manufacturing method |
-
2018
- 2018-10-30 CN CN201811277532.4A patent/CN111128035A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992628A (en) * | 2015-08-11 | 2015-10-21 | 京东方科技集团股份有限公司 | Thin film substrate and display device |
| CN106547136A (en) * | 2015-09-18 | 2017-03-29 | 三星电子株式会社 | Display device |
| CN107092048A (en) * | 2017-06-13 | 2017-08-25 | 深圳市华星光电技术有限公司 | Blue light absorption cut film and blue light display device |
| CN107357080A (en) * | 2017-08-30 | 2017-11-17 | 京东方科技集团股份有限公司 | Color diaphragm and preparation method thereof and color membrane substrates |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
| CN108281092A (en) * | 2018-01-24 | 2018-07-13 | 福州大学 | A kind of micron order LED shows the micro-structure and its manufacturing method of light efficiency extraction |
| CN108417724A (en) * | 2018-03-15 | 2018-08-17 | 京东方科技集团股份有限公司 | Light-emitting diode display and its manufacturing method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451483A (en) * | 2020-05-28 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | Color conversion device, preparation method thereof and display back plate |
| CN111710800A (en) * | 2020-07-02 | 2020-09-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for producing the same |
| CN111710800B (en) * | 2020-07-02 | 2022-12-23 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for preparing display panel |
| CN113426024A (en) * | 2021-04-25 | 2021-09-24 | 上海大学 | Multifunctional light therapeutic device |
| CN115312650A (en) * | 2022-08-05 | 2022-11-08 | 深圳市挚钥文化科技有限责任公司 | Color converter and display |
| CN115472641A (en) * | 2022-11-01 | 2022-12-13 | 镭昱光电科技(苏州)有限公司 | A kind of microdisplay chip and preparation method thereof |
| WO2024093615A1 (en) * | 2022-11-01 | 2024-05-10 | 镭昱光电科技(苏州)有限公司 | Micro-display chip and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111128035A (en) | OLED display panel and display thereof | |
| US11635555B2 (en) | Colour film sheet and fabricating method therefor, colour film substrate, and display apparatus | |
| US11480822B2 (en) | Display substrate comprising a light-reflecting wall having a light-transmissive wall and a light-reflecting layer covering a top surface and side surfaces of the light-transmissive wall, method for manufacturing the same, and display device | |
| CN107102514B (en) | Quantum dot photoresist, quantum dot color film substrate and display device | |
| CN110888192A (en) | Color conversion element and display device including the same | |
| US6818328B2 (en) | Color conversion filter substrate, color conversion type multicolor organic EL display having the color conversion filter substrate, and methods of manufacturing these | |
| CN102648427A (en) | Optical constructions incorporating a light guide and low refrative index films | |
| TW201427893A (en) | Patterned color conversion film and display using the same | |
| CN110707146B (en) | Cover plate, organic light-emitting display panel and display device | |
| US20080252198A1 (en) | Red Fluorescence Conversion Medium, Color Conversion Substrate Using Same and Light-Emitting Device | |
| CN107544178A (en) | Light conversion element and display device including it | |
| CN103943661A (en) | Display device and manufacturing method thereof | |
| WO2021004097A1 (en) | Color conversion assembly, display panel and manufacturing method for color conversion assembly | |
| CN115036342B (en) | Display substrate and display panel | |
| US20060050081A1 (en) | Color conversion filter substrate and a multicolor light emitting device employing the substrate | |
| CN114326206B (en) | Display device | |
| CN111279229A (en) | Color conversion panel and method of manufacturing color conversion panel | |
| KR102287244B1 (en) | Composite sheet of quantum dots and organic nanophosphor, and display device comprising same | |
| WO2021109222A1 (en) | Light conversion structure and display device | |
| CN207114964U (en) | Color diaphragm and color membrane substrates | |
| KR102054274B1 (en) | Quantum dot optical sheet, back light unit comprising the same and display apparatus | |
| CN111748335A (en) | Quantum dot film layer, preparation method thereof and display device | |
| US12025877B2 (en) | Display panel and manufacturing method thereof | |
| US11256132B2 (en) | Color conversion film comprising a color conversion functional layer including a solid phase change material, and back light unit and display device comprising same | |
| KR20110094463A (en) | Method for manufacturing antireflection film and antireflection film for organic light emitting diode manufactured thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200508 |