WO2018123776A1 - Sputtering device and electrode film manufacturing method - Google Patents

Abstract

The purpose of the present invention is to provide a sputtering device that can realize a lower resistance film quality by reducing interference between a high-density plasma and a restricting member. Provided is a sputtering device comprising: a cathode 2 on which a target 1 is disposed; a substrate 3 that is disposed at a position facing the target 1; and a restricting member 4 that restricts the flight direction of sputtered particles. The sputtering device performs film deposition by depositing sputtered particles on the substrate 3. The sputtering device has: a configuration in which the restricting member 4 is disposed so as to straddle erosion regions 5 formed in the target 1, and in which a distance α, from the cathode 2, of facing parts 6 of the restricting member 4 that face the erosion regions 5 is set to be larger than a distance β, from the cathode 2, of a non-facing part 7 of the restricting member 4 that is located between the facing parts 6 and does not face the erosion regions 5; or has a configuration in which a restricting member holding part that holds a restricting member 4 composed of the non-facing part 7 is disposed so as to straddle the erosion regions 5.

Description

Sputtering apparatus and electrode film manufacturing method

The present invention relates to a sputtering apparatus and an electrode film manufacturing method.

In an electronic component using a thin film, a low-resistance metal is used for the thin film serving as an electrode. Although there are various film forming methods, the sputtering method is well known as a method having good film density and adhesion.

A sputtering apparatus for forming a film by a sputtering method is configured such that a cathode and an anode face each other, and a film forming material is disposed on the cathode, and a substrate on which a film is formed is disposed on a part of the anode. Further, a magnetron sputtering method is widely used in which a magnet is disposed on the back surface of the cathode and the electron density in the vicinity of the cathode is increased by a generated magnetic field to perform sputtering.

The cathode has various shapes such as a disc type, a rectangular plate type, and a cylindrical type, and varies depending on the film forming range.

One method of forming a low resistance electrode film is to limit the angle in the film forming direction. As a conventional method, among the sputtered particles flying on the substrate on which the film is formed, a structure (restricting member) that can pass only in a specific direction is arranged between the cathode and the substrate. . Examples of the structure include one or a plurality of plates arranged in parallel or perpendicular to the cathode surface, and a collimator having a large number of holes (see, for example, Patent Documents 1 and 2). Note that when the structure is arranged perpendicular to the cathode surface, it is possible to limit the deposition angle of more sputtered particles than when arranged in parallel.

Since the structure is disposed between the cathode and the substrate, it is exposed to the plasma space. If the structure is electrically grounded, it can also serve as an anode for receiving electrons.

JP-A-7-331431 JP 2011-99162 A

However, electrons that generate plasma for performing magnetron sputtering are moving on the cathode. In particular, when the structure (restricting member) is arranged perpendicular to the cathode surface, the structure has a high-density plasma. May interfere with the movement of electrons.

When the movement of electrons is hindered, the plasma current decreases because electrons are absorbed by the anode, but the power source increases the voltage to maintain the plasma power, resulting in the plasma power. Is kept.

However, since the upper limit of the voltage is provided in the power source, the amount of plasma power that can be output by the power source is limited if the voltage continues to rise. As a result, it is not possible to use the output as rated by the power supply.

In sputtering, the higher the plasma power, the lower the resistance film quality can be obtained. Therefore, the increase in voltage as described above is a serious problem in obtaining good film quality.

The above Patent Documents 1 and 2 do not refer to the above-mentioned problems, and do not actively disclose specific means for solving such problems.

The present invention has been made to solve the above-described problems, and it is possible to provide a sputtering apparatus and an electrode film that can suppress interference between a high-density plasma and a limiting member to obtain a lower resistance film quality. A manufacturing method is provided.

A cathode on which the target is placed;
A substrate disposed at a position facing the target;
A limiting member that is disposed between the cathode and the position where the substrate is disposed, and that restricts the flying direction of the sputtered particles,
A sputtering apparatus for depositing sputtered particles on the substrate to form a film,
The limiting member is disposed so as to straddle the erosion region formed on the target, and the distance from the cathode of the facing portion of the limiting member facing the erosion region is located between the facing portions of the limiting member. A configuration that is set larger than the distance from the cathode of the non-facing portion that does not face the erosion region, or
The limiting member holding portion that holds the limiting member made of the non-facing portion is configured to be disposed so as to straddle the erosion region.

Since the present invention is configured as described above, it becomes a sputtering apparatus and an electrode film manufacturing method capable of suppressing the interference between the high-density plasma and the restricting member to obtain a lower resistance film quality.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. It is a schematic explanatory longitudinal cross-sectional view of a present Example. 10 is a schematic explanatory diagram of another example 1. FIG. It is a schematic explanatory perspective view of the principal part of a present Example. 10 is a schematic explanatory longitudinal sectional view of another example 2. FIG. It is an expansion outline explanatory sectional view of the important section of this example. 10 is a schematic cross-sectional view of another example 3. FIG. 10 is a schematic cross-sectional view of another example 4. FIG. 10 is a schematic cross-sectional view of another example 5. FIG. 12 is a schematic explanatory longitudinal sectional view of another example 6. FIG. 12 is a schematic explanatory longitudinal sectional view of another example 7. FIG. 10 is a schematic explanatory longitudinal sectional view of another example 8. FIG.

Embodiments of the present invention that are considered suitable will be briefly described with reference to the drawings, illustrating the operation of the present invention.

The facing portion 6 of the limiting member 4 is sufficiently separated from the erosion region 5 so that the high-density plasma generated immediately above the erosion region 5 does not interfere, or the facing portion 6 does not exist on the limiting member 4. Therefore, the high-density plasma and the limiting member do not interfere with each other, so that the absorption of electrons by the limiting member is suppressed, and the limiting member can control the flight direction of the plasma particles while forming a thin film having a lower resistance film quality. The film becomes possible.

Specific embodiments of the present invention will be described with reference to the drawings.

In this embodiment, as shown in FIGS. 1 and 2, a cathode 2 and an anode (not shown) are provided in a vacuum chamber 12 so as to face each other. The substrate 3 to be deposited is disposed in the part, and an ionized Ar is applied by applying a DC high voltage between the substrate 3 and the cathode 2 while introducing an inert gas such as Ar into the vacuum chamber 12. 1 is an example in which the present invention is applied to a sputtering apparatus that deposits sputtered particles generated by colliding with 1 on a substrate 3 to form a film. In addition, illustration of the vacuum chamber 12 is abbreviate | omitted except FIGS.

Further, in this embodiment, a magnetron sputtering method is used in which a magnet 8 is arranged on the back surface of the cathode 2 and sputtering is performed by increasing the electron density in the vicinity of the cathode 2 by a generated magnetic field. This sputtering apparatus is used, for example, for manufacturing an electrode film of an LED lighting apparatus.

In addition, this embodiment is an example of an inline sputtering apparatus in which the substrate 3 is sequentially transported by an inline transport mechanism as illustrated in FIG. 1, but the substrate 3 is rotated as in another example illustrated in FIG. The present invention can be similarly applied to a carousel sputtering apparatus that sequentially faces the target while being held by the drum 13.

2 and 4, a limiting member 4 for limiting the flying direction of the sputtered particles is provided between the cathode 2 and the substrate 3 (position where the substrate 3 is disposed).

The limiting member 4 is disposed so as to straddle the erosion region 5 formed in the target 1, and the distance α from the cathode 2 (target 1) of the facing portion 6 facing the erosion region 5 of the limiting member 4 is determined by the limiting member 4. The non-facing portion 7 that does not face the erosion region 5 located between the facing portions 6 is set to be larger than the distance β from the cathode 2 (target 1).

Note that “does not face the erosion region 5” means that the erosion region 5 is far from the inner edge of the erosion region 5 to the extent that it does not interfere with the high-density plasma generated in the vicinity of the erosion region 5.

The limiting member 4 of the present embodiment includes a rod body 11 laid between short-direction members 18 (described later), and the same width as the rod body 11 suspended from the rod body 11 and substantially perpendicular to the target 1. And a vertical plate portion 10 provided. The vertical plate portion 10 constitutes a non-facing portion 7 that does not face the erosion region 5, and the portion of the rod 11 facing the erosion region 5 constitutes the facing portion 6.

The limiting member 4 of the present embodiment connects the limiting member support portion 15 erected on the base portion 14 provided on the bottom surface of the vacuum chamber 12, the limiting member support portion 15, the facing portion 6 and the non-facing portion 7. It is held by the connecting member 16.

The connecting member 16 includes a longitudinal plate portion 17 disposed substantially parallel to the target surface along the longitudinal direction of the target 1 provided so as to surround the outer periphery of the left and right erosion regions 5 in plan view, and the short side of the target 1. It is comprised by the short direction member 18 arrange | positioned substantially parallel to a target surface along a direction. The longitudinal direction plate portion 17 is supported by the restricting member support portion 15, and the end portions of the rods 11 are fixed to the lower surface side of the short direction member 18, respectively. Note that the sputtered particles flying outside the left and right erosion regions 5 are restricted by the connecting member 16 (and the restricting member support portion 15).

That is, an opening surrounded by the limiting member 4 and the connecting member 16 is formed above the target 1, and sputtered particles adhere to the substrate 3 through this opening.

In this embodiment, the restricting member 4 (the connecting member 16) is supported from below by the restricting member supporting portion 15, but the restricting member supporting portion 15 is vacuumed as in the second example shown in FIG. It is good also as a structure fixed to the top | upper surface side of the tank 12, and the structure which supports the limiting member 4 in the suspended state from the upper direction via the connection member 16 by this limiting member support part 15. FIG.

Further, in the present embodiment, as shown in FIG. 6, the limiting member 4 is configured to be disposed within a range of 20% or less of the maximum value of the horizontal magnetic field strength generated near the target surface by the magnet 8. is doing. That is, the facing portion 6 and the non-facing portion 7 are not arranged in a region exceeding 20% of the maximum horizontal magnetic field intensity generated in the vicinity of the target surface. If the limiting member 4 is in an area of 20% or less of the maximum value of the horizontal magnetic field strength, it is possible to limit the deposition angle of sputtered particles without hindering the movement of electrons in the high-density plasma area.

Further, the lower end of the non-facing portion 7 of the limiting member 4 is provided so as to be as close as possible to the target 1 within a range of 20% or less of the maximum value of the horizontal magnetic field strength.

The erosion region 5 is an annular portion that is more strongly sputtered than other portions by focusing the plasma at a high density by the magnetic field of the magnet 8 disposed on the back side of the cathode 2 (target 1). Then, it is the track shape comprised by the two linear parts 5a extended mutually substantially parallel, and the circular arc-shaped part 5b which each connects the both ends of this linear part 5a.

The limiting member 4 of this embodiment is arranged so as to divide the annular erosion region 5 into a plurality when viewed from the substrate 3 side, and the flying direction of sputtered particles generated from the erosion region 5 divided into a plurality by the limiting member 4. It is comprised so that each may be restrict | limited.

Specifically, the non-facing portion 7 made of the vertical plate portion 10 is arranged in parallel to the linear portion 5a inside the erosion region 5, and the facing portion 6 of the rod 11 faces the arc-shaped portion 5b. Is arranged.

Further, as in another example 3 illustrated in FIG. 7, the non-facing portion 7 of the limiting member 4 may be provided with a plate portion 19 substantially parallel to the target surface so as not to cover the erosion region 5, or illustrated in FIG. 8. As in another example 4, the non-facing portion 7 is composed of a rectangular parallelepiped portion 20 whose width is less than the interval between the linear portions 5a, and flies in the direction of the restricting member 4 from the left and right erosion regions 5. It is good also as a structure which further restrict | limits a sputtered particle.

Alternatively, the film-forming shutter 9 that shields the sputtered particles on the substrate 3 may be provided on the limiting member 4 so that the film-forming shutter 9 moves relative to the cathode 2.

For example, a film forming shutter 9 is slidably provided above (or below) the restricting member 4 as shown in another example 5 shown in FIG. 9, and the film forming shutter 9 faces the target 1 when the film is not formed. 4 and the opening surrounded by the connecting member 16 may be closed. Further, the film forming shutter 9 is integrally provided adjacent to the restricting member 4 so that the restricting member 4 and the film forming shutter 9 are juxtaposed, and the restricting member 4 and the film forming shutter 9 are relative to the cathode 2. The target 1 and the limiting member 4 may be opposed to each other during film formation, and the target 1 and the film formation shutter 9 may be opposed to each other during film formation.

Further, the connecting portion between the non-facing portion 7 and the facing portion 6 is such that the bottom edge shape of both ends of the vertical plate portion 10 is gradually separated from the erosion region 5 toward the outer side, and the end portion of the vertical plate portion 10 faces. You may comprise so that the non-facing part 7 and the facing part 6 may be connected smoothly so that it may become the part 6. FIG. FIG. 10 shows another example 6 in which the lower edge shape of both ends of the vertical plate portion 10 is linear, and FIG. 11 shows another example 7 in which the shape is curved (R shape). In this case, the movement of the sputtered particles between the erosion regions 5 divided by the restricting member 4 can be more effectively restricted.

Further, in the configuration in which sputtering is performed simultaneously on a plurality of substrates as in another example 8 illustrated in FIG. 12, a configuration in which non-facing portions 7 each including a vertical plate portion 10 are provided corresponding to each substrate 3 may be employed. good.

In addition, even if the limiting member holding portion that does not have the facing portion 6 and holds the limiting member 4 including the non-facing portion 7 is arranged so as to straddle the erosion region 5, the high-density plasma and the limiting member 4 Interference can be suppressed. The restricting member holding portion is, for example, a rod-like or string-like member that is thin enough not to restrict the flying of the sputtered particles, and has one end fixed to the short direction member 18 and the other end fixed to the non-facing portion 7. The facing part 7 is held.

The present invention is not limited to the present embodiment, and the specific configuration of each component can be designed as appropriate.

Claims (9)

A cathode on which the target is placed;
A substrate disposed at a position facing the target;
A limiting member that is disposed between the cathode and the position where the substrate is disposed, and that restricts the flying direction of the sputtered particles,
A sputtering apparatus for depositing sputtered particles on the substrate to form a film,
The limiting member is disposed so as to straddle the erosion region formed on the target, and the distance from the cathode of the facing portion of the limiting member facing the erosion region is located between the facing portions of the limiting member. A configuration that is set larger than the distance from the cathode of the non-facing portion that does not face the erosion region, or
A sputtering apparatus, wherein a limiting member holding portion that holds the limiting member made of the non-facing portion is arranged so as to straddle the erosion region. The sputtering apparatus according to claim 1, wherein the erosion region is annular, and the limiting member is arranged so as to divide the annular erosion region into a plurality when viewed from the substrate side. The erosion region is composed of two linear portions that extend in parallel to each other and arc-shaped portions that connect both end portions of the linear portions, and the non-facing portion is formed of the two linear portions. 2. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is disposed between the facing portions or the limiting member holding portion so as to face the arcuate portion. A cathode on which the target is placed;
A substrate disposed at a position facing the target;
A magnet disposed on the opposite side of the cathode on which the substrate is disposed, and a limiting member disposed between the cathode and the position on which the substrate is disposed to limit the flying direction of the sputtered particles,
A sputtering apparatus for depositing sputtered particles on the substrate to form a film,
The limiting member is disposed so as to straddle an erosion region formed on the target, and is disposed within a range of 20% or less of the maximum horizontal magnetic field strength generated near the target surface by the magnet. A sputtering apparatus characterized by comprising: The sputtering apparatus according to claim 4, wherein the erosion region is annular, and the limiting member is arranged so as to divide the annular erosion region into a plurality when viewed from the substrate side. The erosion region is composed of two linear portions extending in parallel to each other and arc-shaped portions connecting both ends of the linear portions, and the restriction is made so as to straddle the two arc-shaped portions. 6. The sputtering apparatus according to claim 5, wherein a member is disposed. The limiting member is provided with a film-forming shutter that shields sputtered particles on the substrate,
The sputtering apparatus according to claim 1, wherein the film-forming shutter moves relative to the cathode. The limiting member is provided with a film-forming shutter that shields sputtered particles on the substrate,
The sputtering apparatus according to claim 4, wherein the film forming shutter moves relative to the cathode. An electrode film manufacturing method comprising forming an electrode film on a substrate using the sputtering apparatus according to any one of claims 1 to 8.

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