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WO2018120461A1 - 显示面板及其制备方法、显示器 - Google Patents

显示面板及其制备方法、显示器 Download PDF

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Publication number
WO2018120461A1
WO2018120461A1 PCT/CN2017/078052 CN2017078052W WO2018120461A1 WO 2018120461 A1 WO2018120461 A1 WO 2018120461A1 CN 2017078052 W CN2017078052 W CN 2017078052W WO 2018120461 A1 WO2018120461 A1 WO 2018120461A1
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WIPO (PCT)
Prior art keywords
layer
substrate
display panel
conductive layer
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/078052
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English (en)
French (fr)
Inventor
简重光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
Original Assignee
HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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Application filed by HKC Co Ltd, Chongqing HKC Optoelectronics Technology Co Ltd filed Critical HKC Co Ltd
Priority to US15/832,723 priority Critical patent/US20180188626A1/en
Publication of WO2018120461A1 publication Critical patent/WO2018120461A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H10P76/2041—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133776—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having structures locally influencing the alignment, e.g. unevenness
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel, a method of fabricating the same, and a display using the same.
  • the display panel generally includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate.
  • a concave portion is formed on the pixel electrode of the first substrate, and the pixel electrode is connected to the source and the drain through the concave portion.
  • liquid crystal when liquid crystal is injected between the first substrate and the second substrate, liquid crystal may flow into the concave portion, resulting in poor diffusion of the liquid crystal, thereby affecting the quality of the display panel.
  • the present invention provides a display panel, which aims to solve the problem of poor quality of the display panel in the prior art to some extent.
  • the display panel of the present invention includes a first substrate, a second substrate, and a liquid crystal layer interposed between the second substrate and the first substrate, the first substrate including the first a substrate, a switch array layer disposed on the first substrate, a filter layer covering the first substrate and the switch array layer, a passivation layer and a first conductive layer disposed on the surface of the filter layer,
  • the filter layer has a first through hole, the first conductive layer is coupled to the switch array layer through a first through hole of the filter layer, and the first conductive layer is provided with at least one recess, The recess is filled with a filler.
  • the recess has a depth of 1 to 2 micrometers
  • the filler has a height of 1 to 2 micrometers.
  • the filler is made of polyimide or polymethyl methacrylate.
  • the filter layer is provided with at least one first through hole, a part of the passivation layer is received in the first through hole, and the partial passivation layer is provided with at least one second through hole, and a part of the passivation layer
  • the first conductive layer is received in the second through hole, and the first conductive layer is coupled to the switch array layer through the first through hole and the second through hole of the filter layer, and is accommodated in the first through hole A portion of the first conductive layer in the two through holes is opened with the recess.
  • the filter layer includes a plurality of color resist units sequentially connected, and each two adjacent color resist units are partially superposed.
  • the switch array layer includes a first metal layer disposed on the first substrate, an intermediate layer disposed on the first metal layer and the first substrate, and a first layer disposed on the intermediate layer, first a metal layer and a second metal layer of the first substrate, the first conductive layer being coupled to the second metal layer.
  • the first metal layer is a first metal composite layer
  • the first metal composite layer is a molybdenum-aluminum metal composite layer, a molybdenum-aluminum alloy composite layer, a titanium-aluminum metal composite layer, or a copper-molybdenum metal Composite layer.
  • the second metal layer is a second metal composite layer
  • the second metal composite layer is a molybdenum-aluminum-molybdenum metal composite layer, a titanium-aluminum-titanium metal composite layer, or a copper-molybdenum metal composite layer.
  • the intermediate layer includes an insulating layer sequentially disposed on the first metal layer and the surface of the first substrate, and an amorphous silicon layer.
  • a protective layer is further formed between the filter layer and the second metal layer, and the protective layer and the passivation layer are made of silicon nitride or silicon nitride.
  • the second substrate includes a second substrate, a matrix layer disposed on the second substrate, and a second conductive layer disposed on the second substrate and the matrix layer.
  • first conductive layer and the second conductive layer are both semi-transparent or transparent conductive metal layers.
  • the semi-transparent or transparent conductive metal layer is made of a composite of indium oxide, tin oxide, zinc oxide, cadmium oxide, cadmium indium oxide, cadmium tin oxide, zinc tin oxide, indium oxide and zinc oxide, or Tin-doped indium trioxide.
  • the display panel further includes a plurality of spacer pillars connected between the first conductive layer and the second conductive layer.
  • the material of the spacer column is polyimide or polymethyl methacrylate.
  • the invention also provides a method for preparing a display panel, comprising the following steps:
  • the second substrate is paired with the first substrate
  • Liquid crystal is injected into the second substrate and the first substrate to form a liquid crystal layer.
  • the preparing steps of the filter layer include:
  • the photoresist film is photolithographically processed to form a plurality of color resisting units, and each of the two adjacent color resisting units is partially superposed, and at least one first through hole is formed in the filter layer.
  • step of filling the recess with the filler comprises:
  • the method for preparing the second substrate comprises the following steps:
  • a second conductive layer is plated on the surface of the second substrate and the matrix layer.
  • the invention also provides a display comprising the display panel.
  • the display panel includes a first substrate, a second substrate, and a liquid crystal layer interposed between the second substrate and the first substrate, the first substrate includes a first substrate, and is disposed on the first a switch array layer of the substrate, a filter layer covering the first substrate and the switch array layer, a passivation layer sequentially disposed on a surface of the filter layer, and a first conductive layer, the filter layer having a first a through hole, the first conductive layer is coupled to the switch array through a first through hole of the filter layer In the column layer, the first conductive layer is provided with at least one recess, and the recess is filled with a filler.
  • the filter layer of the present invention is provided with a first through hole, and the first conductive layer is coupled to the switch array layer through a first through hole of the filter layer, the first conductive
  • the layer is provided with at least one recess, and the recess is filled with a filler.
  • FIG. 1 is a schematic diagram of a display panel according to an embodiment of the invention.
  • FIG. 2 is a flow chart of a method for preparing a display panel according to an embodiment of the invention.
  • Second color resistance unit 10
  • First substrate 155
  • Third color resistance unit 11
  • First substrate 157
  • First through hole 12
  • Filler 17
  • Passivation layer 13
  • Switch array layer 171
  • First metal layer 19
  • First conductive layer 133 middle layer 191
  • Second metal layer 30
  • Second substrate 14 Septum column
  • Second substrate 15
  • Filter layer 33
  • Matrix layer 151
  • First color resistance unit 35 Second conductive layer
  • first, second, and the like in the present invention are used for the purpose of description only, and are not to be construed as indicating or implying their relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
  • the technical solutions between the various embodiments may be combined with each other, but must be based on the realization of those skilled in the art, and when the combination of the technical solutions is contradictory or impossible to implement, it should be considered that the combination of the technical solutions does not exist. It is also within the scope of protection required by the present invention.
  • the present invention provides a display panel 100.
  • the display panel 100 includes a first substrate 10, a second substrate 30, and a liquid crystal layer interposed between the second substrate 30 and the first substrate 10.
  • the first substrate 10 includes a first substrate 11 a switch array layer 13 disposed on the first substrate 11, a filter layer 15 covering the first substrate 11 and the switch array layer 13, and a passivation layer 17 sequentially disposed on the surface of the filter layer 15.
  • the first conductive layer 19 the filter layer 15 has a first through hole 157, and the first conductive layer 19 is coupled to the switch array layer 13 through the first through hole 157 of the filter layer 15,
  • the first conductive layer 19 is provided with at least one recess 191 filled with a filler 12 .
  • the number of the recesses 191 is, for example, two to correspond to the two switch array layers 13.
  • the filter layer 15 of the technical solution of the present invention is provided with a first through hole 157, and the first conductive layer 19 is coupled to the switch array layer 13 through the first through hole 157 of the filter layer 15, A conductive layer 19 is provided with at least one recess 191 filled with a filler 12 therein.
  • the liquid crystal is injected into the first substrate 10 and the second substrate 30, since the recessed portion 191 is filled with the filling member 12, the liquid crystal does not flow into the concave portion 191, so that the liquid crystal can be uniformly distributed in the Between the first substrate 10 and the second substrate 30, the resulting display panel 100 has a better quality.
  • the recess 191 has a depth of 1 to 2 ⁇ m, and the filler 12 has a height of 1 to 2 ⁇ m.
  • the depth of the concave portion 191 of the technical solution of the present invention is 1 to 2 micrometers, the height of the filling member 12 is 1 to 2 micrometers, the filling member 12 fills the concave portion 191, and the filling member 12 is close to the second portion.
  • the surface of the substrate 30 is flush with the surface of the first conductive layer 19 such that when the liquid crystal is injected into the first substrate 10 and the second substrate 30, the recess 12 is filled with the filler 12, and The surface of the filler 12 adjacent to the second substrate 30 is flush with the surface of the first conductive layer 19, liquid crystal does not flow into the recess 191, and the liquid crystal is uniformly distributed on the first substrate. Between 10 and the second substrate 30, the resulting display panel 100 has a better quality.
  • the material of the filler 12 is polyimide or polymethyl methacrylate.
  • the material of the filler 12 of the technical solution of the present invention is polyimide or polymethyl methacrylate, so that the filling member 12 can seal the concave portion 191 to prevent liquid crystal from entering the concave portion 191.
  • the filter layer 15 is provided with at least one of the first through holes 157.
  • the partial passivation layer 17 is received in the first through hole 157, and the partial passivation layer 17 is provided with a second through hole 171.
  • a conductive layer 19 is received in the second through hole 171, and a portion of the first conductive layer 19 received in the second through hole 171 is opened with the recess 191.
  • the number of the first through hole 157, the second through hole 171, and the recess 191 may be determined according to actual production requirements. In this embodiment, the number of the first through hole 157, the second through hole 171, and the recess 191 is two.
  • a portion of the passivation layer 17 of the present invention is received in the first via 157 of the filter layer 15, and a portion of the first conductive layer 19 is received in the second via 171 of the passivation layer 17 and is received in the A portion of the first conductive layer 19 of the second through hole 171 is opened with the recess 191.
  • the first through hole 157, the second through hole 171, and the recess 191 may communicate with each other such that the first conductive layer 19 may pass through the first through hole 157 and the second through hole 171 and the second The metal layer 135 is connected.
  • the filter layer 15 includes a plurality of color resisting units connected in series, and each two adjacent color resisting units are partially superposed.
  • the filter 15 is a color filter, and includes a first color resist unit 131 (red color resist), a second color resist unit 133 (green color resist), and a third color resist unit 135 (blue color resist).
  • the plurality of color resisting units connected in sequence in the technical solution of the present invention are superimposed on each of the two adjacent color resisting units to provide a better color display for the display panel 100.
  • the switch array layer 13 includes a first metal layer 131 disposed on the first substrate 11, an intermediate layer 133 disposed on the first metal layer 131 and the first substrate 11, and an intermediate layer 133 disposed on the intermediate layer And the second metal layer 135 of the first substrate 11, the first conductive layer 19 is connected to the second metal layer 135.
  • the first metal layer 131 may form a gate, a gate line, and a common electrode.
  • the second metal layer 135 may form a source and a drain.
  • the intermediate layer 133 includes an insulating layer sequentially disposed on the surfaces of the first metal layer 131 and the first substrate 11, and an amorphous silicon layer.
  • the insulating layer is a silicon nitride (SiN x ) layer or a gate-silicon nitride (G-SiN x ) layer, where x is 1 or three-thirds.
  • the amorphous silicon layer may be an amorphous silicon ( ⁇ -Si) layer and an N-type amorphous silicon (N + ⁇ -Si) layer deposited on the amorphous silicon layer.
  • the switch array layer 13 of the present invention includes a first metal layer 131, an intermediate layer 133, and a second metal layer 135 plated on the intermediate layer and the first substrate 11 to ensure that the display panel 100 can be normal work.
  • the first metal layer 131 is a first metal composite layer, and the first metal composite layer is A molybdenum-aluminum metal composite layer, a molybdenum-aluminum alloy composite layer, a titanium-aluminum metal composite layer, or a copper-molybdenum metal composite layer.
  • the first metal layer 131 may be a composite metal layer, so that the first metal layer 131 has better conductivity.
  • the second metal layer 135 is a second metal composite layer, and the second metal composite layer is a molybdenum-aluminum-molybdenum metal composite layer, a titanium-aluminum-titanium metal composite layer, or a copper-molybdenum metal composite layer.
  • the technical solution of the present invention may be a composite metal layer in the second metal layer 135, so that the second metal layer 135 has better conductivity.
  • a protective layer is further formed between the filter layer 15 and the second metal layer 135.
  • the protective layer and the passivation layer 17 are made of silicon nitride or silicon nitride, that is, SiN x , x is 1 or 4/3.
  • a protective layer is further formed between the filter layer 15 and the second metal layer 135 to protect the second metal layer 135.
  • the passivation layer 17 may isolate the filter layer 15 from the first conductive layer 19.
  • the second substrate 30 includes a second substrate 31, a matrix layer 33 disposed on the second substrate, and a second conductive layer 35 plated on the second substrate 31 and the matrix layer 33.
  • the matrix layer 33 can be a black matrix layer.
  • the second substrate 30 of the technical solution of the present invention includes a second substrate 31, a matrix layer 33 and a second conductive layer 35 to ensure that the display panel 100 can work normally.
  • the first conductive layer 19 and the second conductive layer 35 are both semi-transparent or transparent conductive metal layers.
  • the translucent or transparent conductive metal layer may be made of indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), cadmium oxide (CdO), or cadmium indium oxide (CdIn 2 O). 4 ), cadmium tin oxide (Cd 2 SnO 4 ), zinc tin oxide (Zn 2 SnO 4 ), a complex of indium oxide and zinc oxide (In 2 O 3 -ZnO), tin-doped indium trioxide (In 2 O 3 :Sn) and so on.
  • the first conductive layer 19 has a thickness of 0.03 to 0.05 ⁇ m.
  • the first conductive layer 19 and the second conductive layer 35 of the technical solution of the present invention are transparent or translucent conductive metal layers, so that the display panel has a better display effect.
  • the display panel 100 further includes a plurality of spacer posts 14 connected between the first conductive layer 19 and the second conductive layer 35.
  • a plurality of spacer posts 14 are disposed between the first conductive layer 19 and the second conductive layer 35 of the technical solution of the present invention such that the first conductive layer 19 and the second conductive layer 35 have appropriate gap.
  • the display panel 100 has an in-plane switching mode (IPS mode) or a vertical alignment mode (VA mode).
  • IPS mode in-plane switching mode
  • VA mode vertical alignment mode
  • the present invention further provides a method for preparing a display panel, which includes the following steps:
  • a passivation layer 17 and a first conductive layer 19 are sequentially formed on the filter layer 15 , wherein the filter layer 15 is provided with a first through hole 157 through which the first conductive layer 19 passes.
  • the first through hole 157 of the coupling layer 157 is coupled to the switch array layer 13, the first conductive layer 19 has a recess 191;
  • Liquid crystal is injected into the second substrate 30 and the first substrate 10 to form a liquid crystal layer.
  • the filter layer 15 is provided with two through holes 157, and the number of the recesses 191 is also two.
  • At least one concave portion 191 is opened in the first conductive layer 19, and the concave portion 191 is filled with a filling member 12.
  • the liquid crystal is injected into the first substrate 10 and the second substrate 30, since the recessed portion 191 is filled with the filling member 12, the liquid crystal does not flow into the concave portion 191, so that the liquid crystal can be uniformly distributed in the Between the first substrate 10 and the second substrate 30, the resulting display panel 100 has a better quality.
  • the steps of preparing the switch array layer 13 include:
  • the first metal layer 131 is plated with the first metal layer 131, and the first metal layer 131 is subjected to a first photolithography process to remove a portion of the first metal layer 131 to form a gate electrode, a gate line and a common electrode;
  • the intermediate layer 133 includes an insulating layer sequentially applied to the surfaces of the first metal layer 131 and the first substrate 11, and an amorphous silicon layer.
  • the insulating layer is a silicon nitride (SiN x ) layer or a gate-silicon nitride (G-SiN x ) layer.
  • the amorphous silicon layer may be an amorphous silicon ( ⁇ -Si) layer and an N-type amorphous silicon (N + ⁇ -Si) layer deposited on the amorphous silicon layer.
  • the switch array layer 13 of the present invention includes a first metal layer 131, an intermediate layer 133, and a second metal layer 135 plated on the intermediate layer and the first substrate 11 to ensure that the display panel 100 can be normal work.
  • the preparation steps of the filter layer 15 include:
  • a portion of the passivation layer 17 accommodated in the first via hole 157 is formed into a second via hole 171 by a fourth photolithography process.
  • the first conductive layer 19 accommodated in the second through hole 171 is provided with the concave portion 191 by a fifth photolithography process.
  • the filter 15 is a color filter, such as but not limited to, including a first color resist unit 131 (red color resist), a second color resist unit 133 (green color resist), and a third color resist unit 135 (blue Color resistance).
  • the plurality of color resisting units connected in sequence in the technical solution of the present invention are superimposed on each of the two adjacent color resisting units to provide a better color display for the display panel 100.
  • the step of filling the filling member 12 in the recess 191 includes:
  • the concave portion 191 is filled with an organic solvent, and an organic substance is coated on the surface of the first conductive layer 19 to form an organic layer; the organic layer may be made of polyimide or polymethyl methacrylate.
  • the organic layer is photolithographically processed to form a plurality of spacer pillars 14 and a plurality of fillers 12 , each of which is connected between the first conductive layer 19 and the second substrate 30 .
  • the filler 12 fills the recess 191.
  • the lithography process can be:
  • the concave portion 191 is filled with an organic solvent, and an organic solvent is coated on the surface of the first conductive layer 19 to form an organic layer;
  • the organic layer may be made of polyimide or polymethyl methacrylate.
  • the first mask having no light transmittance, that is, the light of the first mask
  • the transmittance of the second mask is 100%; the light transmittance of the third mask is 10 to 90%;
  • the exposure treatment is: irradiating the ternary mask with ultraviolet light, and ultraviolet light irradiated to the first mask does not pass through the first mask, so that the irradiation Ultraviolet light to the first mask does not illuminate the first portion of the organic layer; ultraviolet light that impinges on the second mask passes through the second mask, passing through the second mask.
  • the ultraviolet light of the mode is irradiated to the second portion of the organic layer; the ultraviolet light irradiated to the third mask partially passes through the third mask, and the ultraviolet light passing through the third mask is irradiated To the third part of the organic layer;
  • the third mask has a light transmittance of 10 to 90%, so that the transmittance of the ultraviolet light is 10 to 90%, and the third mask can be disposed corresponding to the concave portion 191, and only Part of the ultraviolet light can be irradiated through the third mask to the organic layer on the filler member 12. That is, the organic matter in the filler 12 is not exposed, and the organic layer on the filler 12 is not completely exposed. After the unexposed organic layer is removed, the organic matter in the filler 12 is removed without being corroded, thereby forming the filler 12.
  • a plurality of spacer posts 14 are disposed between the first conductive layer 19 and the second conductive layer 35 to have a proper gap between the first conductive layer 19 and the second conductive layer 35.
  • a filling member 12 is disposed in the concave portion 191, and liquid crystal does not flow into the concave portion 191, so that the liquid crystal can be uniformly distributed between the first substrate 10 and the second substrate 30, so that the produced display panel 100 is obtained. Has a better quality.
  • the method for preparing the second substrate 30 includes the following steps:
  • a second conductive layer 35 is plated on the surface of the second substrate 31 and the matrix layer 33.
  • the second substrate 30 of the technical solution of the present invention includes a second substrate 31, a matrix layer 33 and a second conductive layer 35 to ensure that the display panel 100 can work normally.
  • a protective layer may be formed between the filter layer 15 and the second metal layer 135.
  • the protective layer and the passivation layer 17 are made of silicon nitride or silicon nitride, ie, SiN x , x is 1 or 4/3.
  • a protective layer is further formed between the filter layer 15 and the second metal layer 135 to protect the second metal layer 135.
  • the passivation layer 17 may isolate the filter layer 15 from the first conductive layer 19.
  • the present invention also provides a display including the display panel 100. Since the display adopts all the technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are not repeated here. Said.
  • the display also includes other components that perform display functions, such as horizontal polarizers, vertical polarizers, and the like.

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Abstract

一种显示面板（100），其包括第一基板（10）、第二基板（30）、及夹设于第二基板（30）与第一基板（10）之间的液晶层，第一基板（10）包括第一基体（11）、设置于第一基体（11）的开关阵列层（13）、覆盖第一基体（11）和开关阵列层（13）的滤光层（15）、依次设于滤光层（15）表面的钝化层（17）及第一导电层（19），滤光层（15）具有第一通孔（157），第一导电层（19）通过滤光层（15）的第一通孔（157）耦接开关阵列层（13），第一导电层（19）开设有至少一凹部（191），凹部（191）填充有填充件（12）。还提供显示面板（100）的制备方法和应用显示面板（100）的显示器。

Description

显示面板及其制备方法、显示器 技术领域
本发明涉及显示器技术领域，尤其涉及一种显示面板、该显示面板的制备方法、及应用该显示面板的显示器。
背景技术
显示面板通常包括第一基板、第二基板和夹设于所述第一基板和所述第二基板的液晶层。所述第一基板的像素电极上开设有凹部，所述像素电极可通过所述凹部与源极和漏极连接。然而，于所述第一基板和所述第二基板之间注入液晶时，液晶会流入所述凹部，导致液晶的扩散不良，从而影响显示面板的品质。
发明内容
鉴于上述问题，本发明提供了一种显示面板，旨在一定程度上解决现有技术中显示面板品质差的问题。
为解决上述技术问题，本发明提供的显示面板包括第一基板、第二基板、及夹设于所述第二基板与所述第一基板之间的液晶层，所述第一基板包括第一基体、设置于所述第一基体的开关阵列层、覆盖所述第一基体和所述开关阵列层的滤光层、依次设于所述滤光层表面的钝化层和第一导电层，所述滤光层具有第一通孔，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵列层，所述第一导电层开设有至少一凹部，所述凹部填充有填充件。
进一步地，所述凹部的深度为1～2微米，所述填充件的高度为1～2微米。
进一步地，所述填充件的材质为聚酰亚胺或聚甲基丙烯酸甲酯。
进一步地，所述滤光层开设有至少一所述第一通孔，部分钝化层容纳于所述第一通孔，所述部分钝化层开设有至少一第二通孔，部分 第一导电层容纳于所述第二通孔，所述第一导电层通过所述滤光层的第一通孔和所述第二通孔耦接所述开关阵列层，容纳于所述第二通孔中的部分第一导电层开设有所述凹部。
进一步地，所述滤光层包括依次连接的数个色阻单元，每两个相邻的色阻单元部分叠加。
进一步地，所述开关阵列层包括设于所述第一基体的第一金属层、设于所述第一金属层和所述第一基体的中间层、及设于所述中间层、第一金属层及所述第一基体的第二金属层，所述第一导电层与所述第二金属层连接。
进一步地，所述第一金属层为第一金属复合层，所述第一金属复合层为钼-铝金属复合层、钼-铝合金复合层、钛-铝金属复合层、或铜-钼金属复合层。
进一步地，所述第二金属层为第二金属复合层，所述第二金属复合层为钼-铝-钼金属复合层、钛-铝-钛金属复合层、或铜-钼金属复合层。
进一步地，所述中间层包括依次设于所述第一金属层和所述第一基体表面的绝缘层、和非晶硅层。
进一步地，所述滤光层和所述第二金属层之间还形成有保护层，所述保护层和所述钝化层的材质均为氮化硅或四氮化三硅。
进一步地，所述第二基板包括第二基体、设于所述第二基体的矩阵层、及设于所述第二基体和所述矩阵层的第二导电层。
进一步地，所述第一导电层和所述第二导电层均为半透明或透明的导电金属层。
进一步地，所述半透明或透明的导电金属层的材质为氧化铟、氧化锡、氧化锌、氧化镉、氧化镉铟、氧化镉锡、氧化锌锡、氧化铟和氧化锌的复合物、或掺锡三氧化铟。
进一步地，所述显示面板还包括若干隔垫柱，所述隔垫柱连接于所述第一导电层和所述第二导电层之间。
进一步地，所述隔垫柱的材质为聚酰亚胺或聚甲基丙烯酸甲酯。
本发明还提供一种显示面板的制备方法，其包括以下步骤：
提供第一基体，在所述第一基体上形成开关阵列层；
于所述第一基体和所述开关阵列层上形成滤光层，其中，所述滤光层开设有第一通孔；
于所述滤光层上依次形成钝化层和第一导电层，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵列层，所述第一导电层具有凹部；
于所述凹部填充填充件，制得第一基板；
提供第二基板，将所述第二基板与所述第一基板对组；
在所述第二基板和所述第一基板注入液晶，形成液晶层。
进一步地，所述滤光层的制备步骤包括：
提供光阻剂；
于所述第一基体和所述开关阵列层上涂覆光阻剂，形成光阻膜；
对所述光阻膜进行光刻处理，形成若干色阻单元，每两个相邻的色阻单元部分叠加，且于所述滤光层开设至少一第一通孔。
进一步地，于所述凹部填充填充件的步骤包括：
于所述凹部内填充有机溶剂，并于所述第一导电层的表面涂覆有机物，形成有机层；
对所述有机层进行光刻处理，形成若干隔垫柱和至少一填充件，所述若干隔垫柱均连接于所述第一导电层与所述第二基板之间，所述填充件填充所述凹部。
进一步地，所述第二基板的制备方法包括以下步骤：
提供第二基体；
在第二基体上设置矩阵层；
在所述第二基体和所述矩阵层表面镀覆第二导电层。
本发明还提供一种显示器，所述显示器包括所述显示面板。所述显示面板包括第一基板、第二基板、及夹设于所述第二基板与所述第一基板之间的液晶层，所述第一基板包括第一基体、设置于所述第一基体的开关阵列层、覆盖所述第一基体和所述开关阵列层的滤光层、依次设于所述滤光层表面的钝化层和第一导电层，所述滤光层具有第一通孔，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵 列层，所述第一导电层开设有至少一凹部，所述凹部填充有填充件。
本发明的有益效果是：本发明的滤光层开设有第一通孔，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵列层，所述第一导电层开设有至少一凹部，所述凹部内填充有填充件。在向所述第一基板和所述第二基板注入液晶时，由于所述凹部内填充有填充件，液晶不会流入所述凹部中，使得液晶可均匀地分布于所述第一基板和所述第二基板之间，使得制得的显示面板具有较佳品质。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本发明一实施例的显示面板的示意图。
图2为本发明一实施例的显示面板的制备方法流程图。
附图标号说明：
标号 名称 标号 名称
100 显示面板 153 第二色阻单元
10 第一基板 155 第三色阻单元
11 第一基体 157 第一通孔
12 填充件 17 钝化层
13 开关阵列层 171 第二通孔
131 第一金属层 19 第一导电层
133 中间层 191 凹部
135 第二金属层 30 第二基板
14 隔垫柱 31 第二基体
15 滤光层 33 矩阵层
151 第一色阻单元 35 第二导电层
本发明目的的实现、功能特点及优点将结合实施例，参照附图做 进一步说明。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明，本发明实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果所述特定姿态发生改变时，则所述方向性指示也相应地随之改变。
另外，在本发明中涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个所述特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本发明要求的保护范围之内。
请参照图1，本发明提供一种显示面板100。
所述显示面板100包括第一基板10、第二基板30、及夹设于所述第二基板30与所述第一基板10之间的液晶层，所述第一基板10包括第一基体11、设置于所述第一基体11的开关阵列层13、覆盖所述第一基体11和所述开关阵列层13的滤光层15、依次设于所述滤光层15表面的钝化层17及第一导电层19，所述滤光层15具有第一通孔157，所述第一导电层19通过所述滤光层15的第一通孔157耦接所述开关阵列层13，所述第一导电层19开设有至少一凹部191，所述凹部191填充有填充件12。
本实施例中，所述凹部191的数量例如是两个，以对应于两个开关阵列层13。
本发明的技术方案的滤光层15开设有第一通孔157，所述第一导电层19通过所述滤光层15的第一通孔157耦接所述开关阵列层13，所述第一导电层19开设有至少一凹部191，所述凹部191内填充有填充件12。在向所述第一基板10和所述第二基板30注入液晶时，由于所述凹部191内填充有填充件12，液晶不会流入所述凹部191中，使得液晶可均匀地分布于所述第一基板10和所述第二基板30之间，使得制得的显示面板100具有较佳品质。
所述凹部191的深度为1～2微米，所述填充件12的高度为1～2微米。
本发明技术方案的凹部191的深度为1～2微米，所述填充件12的高度为1～2微米，所述填充件12填充所述凹部191，且所述填充件12靠近所述第二基板30的表面与所述第一导电层19的表面平齐，使得在向所述第一基板10和所述第二基板30注入液晶时，由于所述凹部191内填充有填充件12，且所述填充件12靠近所述第二基板30的表面与所述第一导电层19的表面平齐，液晶不会流入所述凹部191中，且所述液晶均匀地分布于所述第一基板10和所述第二基板30之间，使得制得的显示面板100具有较佳品质。
所述填充件12的材质为聚酰亚胺或聚甲基丙烯酸甲酯。
本发明技术方案的填充件12的材质为聚酰亚胺或聚甲基丙烯酸甲酯，使得所述填充件12可将所述凹部191密封，防止液晶进入所述凹部191。
所述滤光层15开设有至少一所述第一通孔157，部分钝化层17容纳于所述第一通孔157，所述部分钝化层17开设有第二通孔171，部分第一导电层19容纳于所述第二通孔171，容纳于所述第二通孔171中的部分第一导电层19开设有所述凹部191。
本实施例中，所述第一通孔157、所述第二通孔171及所述凹部191的数量可根据实际生产的需要而定。本实施例中，所述第一通孔157、所述第二通孔171及所述凹部191的数量均为两个。
本发明技术方案的部分钝化层17容纳于所述滤光层15的第一通孔157，部分第一导电层19容纳于所述钝化层17的第二通孔171，容纳于所述第二通孔171的部分第一导电层19开设有所述凹部191。所述第一通孔157、所述第二通孔171及所述凹部191可相互连通，使得第一导电层19可通过所述第一通孔157和所述第二通孔171与第二金属层135连接。
所述滤光层15包括依次连接的数个色阻单元，每两个相邻的色阻单元部分叠加。
所述滤光片15为彩色滤光片，包括第一色阻单元131(红色色阻)、第二色阻单元133(绿色色阻)及第三色阻单元135(蓝色色阻)。
本发明技术方案的依次连接的数个色阻单元，每两个相邻的色阻单元部分叠加，为所述显示面板100提供较佳的色彩显示。
所述开关阵列层13包括设于所述第一基体11的第一金属层131、设于所述第一金属层131和所述第一基体11的中间层133、及设于所述中间层和所述第一基体11的第二金属层135，所述第一导电层19与所述第二金属层135连接。
所述第一金属层131可形成栅极、栅线和公共电极。
所述第二金属层135可形成源极和漏极。
所述中间层133包括依次设于所述第一金属层131和所述第一基体11表面的绝缘层、和非晶硅层。所述绝缘层为氮化硅(SiNx)层或栅极-氮化硅(G-SiNx)层，其中x为1或三分之四。所述非晶硅层可为非晶硅(α-Si)层和沉积于所述非晶硅层的N型非晶硅(N+α-Si)层。
本发明技术方案的开关阵列层13包括第一金属层131、中间层133、及镀覆于所述中间层和所述第一基体11的第二金属层135，以保证所述显示面板100可正常工作。
所述第一金属层131为第一金属复合层，所述第一金属复合层为 钼-铝金属复合层、钼-铝合金复合层、钛-铝金属复合层、或铜-钼金属复合层。
本发明技术方案在第一金属层131可为复合金属层，以使所述第一金属层131具有较佳的导电性。
所述第二金属层135为第二金属复合层，所述第二金属复合层为钼-铝-钼金属复合层、钛-铝-钛金属复合层、或铜-钼金属复合层。
本发明技术方案在第二金属层135可为复合金属层，以使所述第二金属层135具有较佳的导电性。
所述滤光层15和所述第二金属层135之间还形成有保护层，所述保护层和所述钝化层17的材质均为氮化硅或四氮化三硅，即SiNx，x为1或三分之四。
本发明技术方案在所述滤光层15和所述第二金属层135之间还形成有保护层，以保护所述第二金属层135。所述钝化层17可将所述滤光层15和所述第一导电层19隔离。
所述第二基板30包括第二基体31、设于所述第二基体的矩阵层33、镀覆于所述第二基体31和所述矩阵层33的第二导电层35。
所述矩阵层33可为黑色矩阵层。
本发明技术方案的第二基板30包括第二基体31、矩阵层33及第二导电层35，以保证所述显示面板100可正常工作。
所述第一导电层19和所述第二导电层35均为半透明或透明的导电金属层。
所述半透明或透明的导电金属层的材质可为：氧化铟(In2O3)、氧化锡(SnO2)、氧化锌(ZnO)、氧化镉(CdO)、氧化镉铟(CdIn2O4)、氧化镉锡(Cd2SnO4)、氧化锌锡(Zn2SnO4)、氧化铟和氧化锌的复合物(In2O3-ZnO)、掺锡三氧化铟(In2O3:Sn)等。
所述第一导电层19的厚度为0.03～0.05微米。
本发明技术方案的第一导电层19和所述第二导电层35为透明或半透明的导电金属层，使得所述显示面板具有较佳的显示效果。
所述显示面板100还包括若干隔垫柱14，所述隔垫柱14连接于所述第一导电层19和所述第二导电层35之间。
本发明技术方案的所述第一导电层19和所述第二导电层35之间设置有若干隔垫柱14，以使第一导电层19和所述第二导电层35之间具有适当的间隙。
可以理解的，所述显示面板100具有面内转换模式(IPS模式)或垂直配向模式(VA模式)。
请参照图2，本发明还提供一种显示面板的制备方法，其包括以下步骤：
提供第一基体11，在所述第一基体11上形成开关阵列层13；
于所述第一基体11和所述开关阵列层13上形成滤光层15；
于所述滤光层15上依次形成钝化层17和第一导电层19，其中，所述滤光层15开设有第一通孔157，所述第一导电层19通过所述滤光层15的第一通孔157耦接所述开关阵列层13，所述第一导电层19具有凹部191；
于所述凹部191填充填充件12，制得第一基板10；
提供第二基板30，将所述第二基板30与所述第一基板10对组；
在所述第二基板30和所述第一基板10注入液晶，形成液晶层。
本实施例中，所述滤光层15上开设有两个通孔157，所述凹部191的数量也是两个。
本发明的技术方案在第一导电层19开设至少一凹部191，所述凹部191内填充有填充件12。在向所述第一基板10和所述第二基板30注入液晶时，由于所述凹部191内填充有填充件12，液晶不会流入所述凹部191中，使得液晶可均匀地分布于所述第一基板10和所述第二基板30之间，使得制得的显示面板100具有较佳品质。
所述开关阵列层13的制备步骤包括：
于所述第一基体11镀覆第一金属层131，对所述第一金属层131进行第一次光刻处理，去除部分第一金属层131，形成栅极、栅线和公共电极；
于未去除的第一金属层131和所述第一基体11依次沉积绝缘层和半导体硅层；
于未去除的绝缘层和未去除的半导体硅层上镀覆第二金属层135；
对所述绝缘层、所述半导体硅层及所述第二金属层135进行第二次光刻处理，去除部分绝缘层、半导体硅层，并去除部分第二金属层135、形成源极和漏极；
所述中间层133包括依次涂覆于所述第一金属层131和所述第一基体11表面的绝缘层、和非晶硅层。所述绝缘层为氮化硅(SiNx)层或栅极-氮化硅(G-SiNx)层。所述非晶硅层可为非晶硅(α-Si)层和沉积于该非晶硅层的N型非晶硅(N+α-Si)层。
本发明技术方案的开关阵列层13包括第一金属层131、中间层133、及镀覆于所述中间层和所述第一基体11的第二金属层135，以保证所述显示面板100可正常工作。
所述滤光层15的制备步骤包括：
提供光阻剂；
于所述第一基体11和所述开关阵列层13上涂覆光阻剂，形成光阻膜；
对所述光阻膜进行第三次光刻处理，形成若干色阻单元，每两个相邻的色阻单元部分叠加，且于所述滤光层15开设至少一第一通孔157，部分钝化层17和部分第一导电层19容纳于所述第一通孔157。
容纳于所述第一通孔157中的部分钝化层17通过第四次光刻处理形成第二通孔171。容纳于所述第二通孔171部分第一导电层19通过第五次光刻处理开设有所述凹部191。
所述滤光片15为彩色滤光片，例如但不限于，包括第一色阻单元131(红色色阻)、第二色阻单元133(绿色色阻)及第三色阻单元135(蓝色色阻)。
本发明技术方案的依次连接的数个色阻单元，每两个相邻的色阻单元部分叠加，为所述显示面板100提供较佳的色彩显示。
于所述凹部191填充所述填充件12的步骤包括：
于所述凹部191内填充有机溶剂，并于所述第一导电层19的表面涂覆有机物，形成有机层；所述有机层的材质可为聚酰亚胺或聚甲基丙烯酸甲酯。
对所述有机层进行光刻处理，形成若干隔垫柱14和若干填充件12，所述若干隔垫柱14均连接于所述第一导电层19与所述第二基板30之间，所述填充件12填充所述凹部191。
所述光刻处理可为：
于所述凹部191内填充有机溶剂，并于所述第一导电层19的表面涂覆有机溶剂，形成有机层；所述有机层的材质可为聚酰亚胺或聚甲基丙烯酸甲酯。
提供一三元掩模，所述三元掩模保护第一掩模、第二掩模及第三掩模，所述第一掩模不具有光透过性，即，第一掩模的光透过率为0％；所述第二掩模的光透过率为100％；所述第三掩模的光透过率为10～90％；
将所述三元掩模置于所述有机层上；
对所述有机层进行曝光处理，所述曝光处理为：采用紫外光照射所述三元掩模，照射到所述第一掩模的紫外光不会穿过所述第一掩模，使得照射到所述第一掩模的紫外光不会照射到所述有机层的第一部分；照射到所述第二掩模的紫外光会穿过所述第二掩模，穿过所述第二掩模的紫外光照射到所述有机层的第二部分；照射到所述第三掩模的紫外光会部分穿过所述第三掩模，穿过所述第三掩模的紫外光会照射到有机层的第三部分；
对所述有机层进行干腐蚀处理，以去除未曝光的有机层，从而形 成所述填充件12和所述隔垫柱14。
可以理解的，所述第三掩模的光透过率为10～90％，使得紫外光的透过率为10～90％，所述第三掩模可与所述凹部191对应设置，只有部分紫外光可穿过第三掩模照射到位于填充件12上的有机层。也就是说，填充件12中的有机物未被曝光，位于所述填充件12上的有机层未完全被曝光。在去除未曝光的有机层后，填充件12中的有机物未被腐蚀而去除，从而形成所述填充件12。
本发明技术方案在所述第一导电层19与所述第二导电层35之间设置若干隔垫柱14，以使第一导电层19和所述第二导电层35之间具有适当的间隙。在凹部191设置填充件12，液晶不会流入所述凹部191中，使得所述液晶可均匀地分布于所述第一基板10和所述第二基板30之间，使得制得的显示面板100具有较佳品质。
所述第二基板30的制备方法包括以下步骤：
提供第二基体31；
在第二基体31上设置矩阵层33；
在所述第二基体31和所述矩阵层33表面镀覆第二导电层35。
本发明技术方案的第二基板30包括第二基体31、矩阵层33及第二导电层35，以保证所述显示面板100可正常工作。
在所述滤光层15和所述第二金属层135之间可形成保护层，所述保护层和所述钝化层17的材质均为氮化硅或四氮化三硅，即SiNx，x为1或三分之四。
本发明技术方案在所述滤光层15和所述第二金属层135之间还形成有保护层，以保护所述第二金属层135。所述钝化层17可将所述滤光层15和所述第一导电层19隔离。
本发明还提供一种显示器，所述显示器包括所述显示面板100。由于所述显示器采用了上述所有实施例的全部技术方案，因此至少具有上述实施例的技术方案所带来的所有有益效果，在此不再一一赘 述。
可以理解的，所述显示器还包括实施显示功能的其他组件，如水平偏光片、垂直偏光片等。
以上仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是在本发明的发明构思下，利用本发明说明书及附图内容所作的等效结构变换，或直接或间接运用在其他相关的技术领域均包括在本发明的专利保护范围内。

Claims (20)

  1. 一种显示面板，包括：
    第一基板，所述第一基板包括：
    第一基体；
    开关阵列层，所述开关阵列层设置于所述第一基体；
    滤光层，所述滤光层覆盖所述第一基体和所述开关阵列层，所述滤光层具有第一通孔；
    钝化层，所述钝化层设于所述滤光层的表面；及
    第一导电层，所述第一导电层设于所述钝化层的表面，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵列层，所述第一导电层开设有至少一凹部，所述凹部填充有填充件；
    第二基板；及
    液晶层，所述液晶层夹设于所述第二基板与所述第一基板之间。
  2. 如权利要求1所述的显示面板，其中，所述凹部的深度为1～2微米，所述填充件的高度为1～2微米。
  3. 如权利要求1所述的显示面板，其中，所述填充件的材质为聚酰亚胺或聚甲基丙烯酸甲酯。
  4. 如权利要求1所述的显示面板，其中，所述滤光层开设有至少一所述第一通孔，部分钝化层容纳于所述第一通孔，所述部分钝化层开设有至少一第二通孔，部分第一导电层容纳于所述第二通孔，所述第一导电层通过所述滤光层的第一通孔和所述第二通孔耦接所述开关阵列层，容纳于所述第二通孔中的部分第一导电层开设有所述凹部。
  5. 如权利要求1所述的显示面板，其中，所述滤光层包括依次连接的数个色阻单元，每两个相邻的色阻单元部分叠加。
  6. 如权利要求1所述的显示面板，其中，所述开关阵列层包括设于所述第一基体的第一金属层、设于所述第一金属层和所述第一基体的中间层、及设于所述中间层、第一金属层及所述第一基体的第二金属层，所述第一导电层与所述第二金属层连接。
  7. 如权利要求6所述的显示面板，其中，所述第一金属层为第一金属复合层，所述第一金属复合层为钼-铝金属复合层、钼-铝合金复合层、钛-铝金属复合层、或铜-钼金属复合层。
  8. 如权利要求6所述的显示面板，其中，所述第二金属层为第二金属复合层，所述第二金属复合层为钼-铝-钼金属复合层、钛-铝-钛金属复合层、或铜-钼金属复合层。
  9. 如权利要求6所述的显示面板，其中，所述中间层包括依次设于所述第一金属层和所述第一基体表面的绝缘层、和非晶硅层。
  10. 如权利要求6所述的显示面板，其中，所述滤光层和所述第二金属层之间还形成有保护层，所述保护层和所述钝化层的材质均为氮化硅或四氮化三硅。
  11. 如权利要求1所述的显示面板，其中，所述第二基板包括第二基体、设于所述第二基体的矩阵层、及设于所述第二基体和所述矩阵层的第二导电层。
  12. 如权利要求11所述的显示面板，其中，所述第一导电层和所述第二导电层均为半透明或透明的导电金属层。
  13. 如权利要求12所述的显示面板，其中，所述半透明或透明的导电金属层的材质为氧化铟、氧化锡、氧化锌、氧化镉、氧化镉铟、氧化镉锡、氧化锌锡、氧化铟和氧化锌的复合物、或掺锡三氧化铟。
  14. 如权利要求11所述的显示面板，其中，所述显示面板还包括若干隔垫柱，所述隔垫柱连接于所述第一导电层和所述第二导电层之间。
  15. 如权利要求14所述的显示面板，其中，所述隔垫柱的材质为聚酰亚胺或聚甲基丙烯酸甲酯。
  16. 一种显示面板的制备方法，包括：
    提供第一基体，在所述第一基体上形成开关阵列层；
    于所述第一基体和所述开关阵列层上形成滤光层，所述滤光层开设有第一通孔；
    于所述滤光层上依次形成钝化层和第一导电层，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵列层，所述第一导电层具有凹部；
    于所述凹部填充填充件，制得第一基板；
    提供第二基板，将所述第二基板与所述第一基板对组；
    在所述第二基板和所述第一基板注入液晶，形成液晶层。
  17. 如权利要求16所述的显示面板的制备方法，其中，所述滤光层的制备步骤包括：
    提供光阻剂；
    于所述第一基体和所述开关阵列层上涂覆光阻剂，形成光阻膜；
    对所述光阻膜进行光刻处理，形成若干色阻单元，每两个相邻的色阻单元部分叠加，且于所述滤光层开设至少一第一通孔。
  18. 如权利要求16所述的显示面板的制备方法，其中，于所述凹部填充填充件的步骤包括：
    于所述凹部内填充有机溶剂，并于所述第一导电层的表面涂覆有机物，形成有机层；
    对所述有机层进行光刻处理，形成若干隔垫柱和至少一填充件，所述若干隔垫柱均连接于所述第一导电层与所述第二基板之间，所述填充件填充所述凹部。
  19. 如权利要求16所述的显示面板的制备方法，其中，所述第二基板的制备方法包括以下步骤：
    提供第二基体；
    在第二基体上设置矩阵层；
    在所述第二基体和所述矩阵层表面镀覆第二导电层。
  20. 一种显示器，包括显示面板，其中，所述显示面板包括：
    第一基板，所述第一基板包括：
    第一基体；
    开关阵列层，所述开关阵列层设置于所述第一基体；
    滤光层，所述滤光层覆盖所述第一基体和所述开关阵列层，所述滤光层具有第一通孔；
    钝化层，所述钝化层设于所述滤光层的表面；及
    第一导电层，所述第一导电层设于所述钝化层的表面，所述第一导电层通过所述滤光层的第一通孔耦接所述开关阵列层，所述第一导电层开设有至少一凹部，所述凹部填充有填充件；
    第二基板；及
    液晶层，所述液晶层夹设于所述第二基板与所述第一基板之间。
PCT/CN2017/078052 2016-12-29 2017-03-24 显示面板及其制备方法、显示器 Ceased WO2018120461A1 (zh)

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